CN113215529A

CN113215529A - Precision mask plate and mask plate assembly

Info

Publication number: CN113215529A
Application number: CN202110483364.XA
Authority: CN
Inventors: 肖志慧; 单为健; 王荣栋
Original assignee: Hefei Visionox Technology Co Ltd
Current assignee: Hefei Visionox Technology Co Ltd
Priority date: 2021-04-30
Filing date: 2021-04-30
Publication date: 2021-08-06
Anticipated expiration: 2041-04-30
Also published as: CN113215529B

Abstract

The application discloses accurate mask and mask assembly, accurate mask includes the mask main part, the mask main part is including being a plurality of coating by vaporization openings of ranks distribution and the area of covering that distributes around each coating by vaporization opening, in the arbitrary cross-section of the perpendicular to self thickness direction of mask main part, lie in along the line direction, and/or, the minimum distance of the area of covering between the coating by vaporization opening of adjacent arrangement includes first minimum distance h1 and second minimum distance h2 at least along the column direction, h1 ≠ h2, and in each cross-section along mask self thickness direction, the area of the cross-section corresponding to the bigger one in first minimum distance h1 and the second minimum distance h2 is bigger; wherein the columns extend in the second direction when the rows extend in the first direction, and the columns extend in the first direction when the rows extend in the second direction, the first direction and the second direction intersecting. The risk of fold appears when this accurate mask plate reducible piece of cloth, promotes the coating by vaporization yield.

Description

Precision mask plate and mask plate assembly

Technical Field

The application belongs to the technical field of display device, especially relates to a precision mask plate and mask plate subassembly.

Background

At present, the OLED (Organic Light-Emitting Diode) display panel is mainly produced by an evaporation coating method, and in the evaporation process, a precise mask plate is required to be used to form films such as R (red) sub-pixels, G (green) sub-pixels, B (blue) sub-pixels, and the like by evaporation so as to ensure that a thin film material is evaporated at a predetermined position.

In a precision mask for forming asymmetrically arranged pixels by evaporation, since there is a difference in distance between openings of the asymmetrically arranged pixels, there is a risk that wrinkles occur in the precision mask when a screen is stretched.

Disclosure of Invention

The embodiment of the application provides a precision mask plate and a mask plate assembly, and the precision mask plate can reduce the risk of wrinkles appearing when a screen is stretched, and improves the evaporation yield.

On one hand, the embodiment of the application provides a precise mask plate, which comprises a mask plate main body, wherein the mask plate main body comprises a plurality of evaporation openings distributed in rows and columns and a masking region distributed around each evaporation opening, the masking regions are positioned in any cross section of the mask plate main body perpendicular to the thickness direction of the mask plate main body and located along the row direction, and/or the minimum distance of the masking regions between the evaporation openings adjacently arranged along the column direction at least comprises a first minimum distance h1 and a second minimum distance h2, h1 ≠ h2, and in each cross section of the mask plate along the thickness direction of the mask plate main body, the area of the cross section corresponding to the larger one of the first minimum distance h1 and the second minimum distance h2 is larger;

wherein the columns extend in a second direction when the rows extend in a first direction, and the columns extend in the first direction when the rows extend in the second direction, the first and second directions intersecting.

According to one aspect of the application, the evaporation openings in the mask plate main body are distributed in n columns x m rows, in any section of the mask plate main body perpendicular to the thickness direction of the mask plate main body, the minimum distance of a masking zone between the evaporation openings in the 2i-1 th row and the evaporation openings in the 2 i-th row which are adjacently arranged in the column direction is a first minimum distance h1, the minimum distance of a masking zone between the evaporation openings in the 2 i-th row and the evaporation openings in the 2i +1 th row is a second minimum distance h2, h1 is not equal to h2, wherein m and n are integers which are greater than 1, and i is not greater than 1 and is not greater than (m-1)/2 and is an integer.

According to one aspect of the application, the minimum distances of the masking zones between the evaporation openings adjacently arranged in the row direction are both a first minimum distance h1 or a second minimum distance h2, and h1 ≠ h 2.

According to an aspect of the present application, in any cross section of the mask body perpendicular to the thickness direction thereof, among the evaporation openings adjacently arranged in the row direction, the minimum distance of the masking region between the evaporation opening of the 2j-1 th column and the evaporation opening of the 2j +1 th column is a first extension distance h1, the minimum distance of the masking region between the evaporation opening of the 2j-1 th column and the evaporation opening of the 2j +1 th column is a second extension distance h2, h1 is not equal to h2, j is not less than 1 and not more than (n-1)/2 and is an integer, or,

in any section of the mask plate main body perpendicular to the thickness direction of the mask plate main body, the minimum distance of a masking zone between the evaporation openings of the 2j-1 th column and the evaporation openings of the 2j +1 th column is a second extension distance h2, the minimum distance of the masking zone between the evaporation openings of the 2j-1 th column and the evaporation openings of the 2j +1 th column is a first extension distance h1, h1 is not equal to h2, j is not less than 1 and not more than (n-1)/2, and the minimum distance is an integer.

According to an aspect of the application, the mask plate main part including evaporate the face and with evaporate the glass face that the face carried on the back mutually, each evaporate the opening include along the glass face with the first half notch hole and the half notch hole of second that the array direction of evaporating the face was arranged, first half notch hole with the half notch hole of second communicates, first half notch hole is including being located the first opening of glass face, half notch hole of second is including being located evaporate the second opening of face.

According to an aspect of the present application, when the first minimum extension distance h1 is greater than the second minimum extension distance h2, the thickness of the region of the mask body corresponding to the minimum extension distance h1 is greater than the thickness of the region of the mask body corresponding to the minimum extension distance h2 along the thickness direction of the mask body;

when the first minimum extension distance h1 is less than the second minimum extension distance h2, the thickness of the region of the mask body corresponding to the minimum extension distance h1 is less than the thickness of the region of the mask body corresponding to the minimum extension distance h2 along the thickness direction of the mask body.

According to an aspect of the application, the first half-cut hole is drawn in gradually from the end, close to the glass surface, of the mask plate main body to the end, far away from the glass surface, and the second half-cut hole is communicated with the first half-cut hole after being drawn in gradually from the end, close to the evaporation surface, of the mask plate main body to the end, far away from the evaporation surface.

According to an aspect of the application, the material of mask plate main part is the iron-nickel alloy.

According to an aspect of the present application, the thickness of the mask body is 10 to 59 μm.

On the other hand, the application provides a mask plate assembly, including the arbitrary accurate mask plate that this application first aspect provided.

Compared with the prior art, the precise mask provided by the application comprises a mask body, wherein the mask body comprises a plurality of evaporation openings and masking regions positioned among the openings of the mask plate, the evaporation openings are arranged along the row and column directions, in any cross section of the mask body perpendicular to the thickness direction of the mask body, along the row and column directions, the minimum distance of the masking regions between adjacent evaporation openings at least comprises a first minimum distance h1 and a second minimum distance h2, namely, in each column, the minimum distance of the masking regions respectively positioned between the evaporation openings of adjacent rows comprises a first minimum distance h1 and a second minimum distance h2, and/or in each row, the minimum distance of the masking regions respectively positioned between the evaporation openings of adjacent columns comprises a first minimum distance h1 and a second minimum distance h2, h1 is not equal to h2, and in each cross section along the thickness direction of the mask plate, the area of the cross section corresponding to the larger of the first minimum distance h1 and the second minimum distance h2 is larger, and the larger part of the cross section area can play a main supporting role due to the fact that larger stress can be borne, so that stress transmission is transmitted along the part corresponding to the larger of h1 and h2 in the covering area in the net tensioning process of the mask plate main body, the stress influence on the part corresponding to the smaller of h1 and h2 in the covering area is weakened, the phenomenon of wrinkles caused by stress concentration of the net surface in the net tensioning process can be effectively improved, evaporation color mixing is prevented, and the yield of finished products is greatly improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments of the present application will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.

Fig. 1 is a schematic top view structure diagram of a first precision mask provided in an embodiment of the present application;

FIG. 2 is a schematic sectional view A-A of FIG. 1;

fig. 3 is a schematic top view structure diagram of a second precision mask provided in the embodiment of the present application;

fig. 4 is a schematic top view structure diagram of a third precision mask provided in an embodiment of the present application

Fig. 5 is a schematic top view structure diagram of a fourth precision mask provided in the embodiment of the present application

Fig. 6 is a partially enlarged view of the region B in fig. 2.

In the drawings:

1-a mask plate main body; 10-vapor deposition opening; 11-a masked zone; 101-first half-engraved hole; 1011-first opening; 102-second half-engraved holes; 1021-a second opening; 12-glass surface; 13-vapor plating of the surface.

Detailed Description

Features and exemplary embodiments of various aspects of the present application will be described in detail below. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced without some of these specific details. The following description of the embodiments is merely intended to provide a better understanding of the present application by illustrating examples thereof.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

The inventor researches and discovers that the precision mask plate for evaporating and forming asymmetrically arranged pixels has the risk of generating wrinkles when the screen is stretched, and the reason is that: there is the distance difference between the pixel opening of asymmetric pixel of range, thereby in the precision mask who is used for the asymmetric pixel of coating by vaporization, with the entity district (Rib for short) between the coating by vaporization opening of each pixel one-to-one, there is great difference, it is inhomogeneous to lead to stress distribution in the precision mask, stress difference enlargies when precision mask receives tensile force, thereby can be in the problem of stress concentration in precision mask part region appearance, lead to precision mask to warp and the fold appears, thereby can produce the coating by vaporization colour mixture, seriously influence the product yield.

For better understanding of the present application, a detailed description will be given below of a fine mask and a mask plate assembly according to an embodiment of the present application with reference to fig. 1 to 6.

Referring to fig. 1, 2 and 3, an embodiment of the present application provides a precision mask, including a mask main body 1, where the mask main body 1 includes a plurality of evaporation openings 10 distributed in rows and columns and a masking region 11 distributed around each evaporation opening 10, and in any cross section of the mask main body perpendicular to the thickness direction of the mask main body, the minimum distance of the masking region 11 located along the row direction and/or between the evaporation openings 10 adjacently arranged along the column direction at least includes a first minimum distance h1 and a second minimum distance h2, h1 ≠ h2, and in each cross section along the thickness direction of the mask main body, the area of the cross section corresponding to the larger one of the first minimum distance h1 and the second minimum distance h2 is larger;

wherein the columns extend in the second direction when the rows extend in the first direction, and the columns extend in the first direction when the rows extend in the second direction, the first direction and the second direction intersecting.

In the above-mentioned precision mask provided by the present application, the mask body 1 includes a plurality of evaporation openings 10 and masking regions 11 located between the evaporation openings of the mask body, the evaporation openings 10 are arranged along a row-column direction, in any cross section of the mask body perpendicular to its thickness direction, along the row-column direction, the minimum distance of the masking regions 11 between adjacent evaporation openings 10 includes at least a first minimum distance h1 and a second minimum distance h2, i.e., in each column, the minimum distance of the masking regions 11 located between adjacent rows of evaporation openings 10 includes a first minimum distance h1 and a second minimum distance h2, and/or, in each row, the minimum distance of the masking regions 11 located between adjacent rows of evaporation openings 10 includes a first minimum distance h1 and a second minimum distance h2, h1 ≠ h2, and as shown in fig. 2, in each cross section along the thickness direction of the mask plate, the area of the cross section corresponding to the larger one of the first minimum distance h1 and the second minimum distance h2 is larger, the larger part of the cross section area can play a main supporting role due to the capability of bearing larger stress, so that the mask plate main body 1 is in the process of mesh opening, the stress is transferred along the part corresponding to the larger one of h1 and h2 in the covering area 11, the part corresponding to the smaller one of h1 and h2 in the covering area 11 is weakened to be influenced by the stress, the phenomenon of wrinkles caused by stress concentration of the mesh surface in the process of mesh opening can be effectively improved, evaporation color mixing is prevented, and the yield of finished products is greatly improved.

In a possible embodiment, referring to fig. 1 and fig. 2, the evaporation openings 10 in the mask body 1 are distributed in n columns × m rows, and in any cross section of the mask body perpendicular to the thickness direction of the mask body, among the evaporation openings 10 adjacently arranged in the column direction, the masking region 11 between the evaporation openings 10 in the 2i-1 th row and the evaporation openings 10 in the 2 i-th row has a first minimum distance h1, and the masking region 11 between the evaporation openings 10 in the 2 i-th row and the evaporation openings 10 in the 2i +1 th row has a second minimum distance h2, h1 is not equal to h2, where m and n are integers greater than 1, and 1 is not less than i (m-1)/2 and is an integer.

In the above embodiment, i is not less than 1, the 2i row is an even row, the 2i-1 row and the 2i +1 row are odd rows located at two sides of the 2i row, in any cross section of the mask plate body perpendicular to the thickness direction of the mask plate body, the odd rows are located in the evaporation openings 10 adjacently arranged in the column direction, the masking region 11 between the evaporation openings 10 in the 2i-1 row and the evaporation openings 10 in the 2i row has a first minimum distance h1, the masking region 11 between the evaporation openings 10 in the 2i row and the evaporation openings 10 in the 2i +1 row has a second minimum distance h2, that is, as shown in fig. 1 and fig. 2, in each cross section of the mask plate body in the thickness direction at each column position, the masking regions 11 between the evaporation openings 10 arranged in the column direction are distributed at intervals of the first minimum distance h1 and the second minimum distance h2, and h1 and h2 are not equal, and the area of the cross section corresponding to the larger of the first minimum distance h1 and the second minimum distance h2 is larger, and the larger part of the cross section area can play a main supporting role because of being capable of bearing larger stress, so that the stress transmission of the mask plate main body 1 is transmitted along the part corresponding to the larger of h1 and h2 in the masking area 11 in the screen tensioning process, and the stress influence on the part corresponding to the smaller of h1 and h2 in the masking area 11 is weakened, thereby effectively improving the phenomenon of wrinkles caused by screen surface stress concentration in the screen tensioning process, preventing evaporation color mixing, and greatly improving the yield of finished products.

Since the columns extend in the second direction y when the rows extend in the first direction x and the columns extend in the first direction x when the rows extend in the second direction y, the first direction and the second direction intersecting, in one possible embodiment the rows extend in the first direction x and the columns extend in the second direction y perpendicular to the first direction x, and in another possible embodiment the rows extend in the first direction x and the columns extend in the second direction y perpendicular to the first direction x.

In the above embodiments, when the rows extend in the first direction x and the columns extend in the second direction y perpendicular to the first direction x, one possible embodiment is: the minimum distances of the masking regions 11 between the evaporation openings 10 adjacently arranged in the row direction are both the first minimum distance h1 or the second minimum distance h2, and h1 ≠ h2, specifically, the first minimum distance h1 may be greater than the second minimum distance h2, or the first minimum distance h1 may be smaller than the second minimum distance h 2.

In a possible embodiment, the rows extend along a first direction x, the columns extend along a second direction y perpendicular to the first direction x, the evaporation openings 10 in the mask body 1 are distributed in n columns × m rows, and in any cross section of the mask body perpendicular to the thickness direction of the mask body, the evaporation openings 10 are located in the evaporation openings 10 adjacently arranged along the column direction, a masking region 11 between the evaporation openings 10 in the 2i-1 th row and the evaporation openings 10 in the 2 i-th row has a first minimum distance h1, a masking region 11 between the evaporation openings 10 in the 2 i-th row and the evaporation openings 10 in the 2i +1 th row has a second minimum distance h2, wherein m and n are integers greater than 1, i is greater than or equal to (m-1)/2 and is an integer, and h1 is not equal to h 2; the minimum distances of the masking regions 11 between the vapor deposition openings 10 arranged adjacently in the row direction are each the second minimum distance h 2. Because the area of the cross section corresponding to the larger of the first minimum distance h1 and the second minimum distance h2 in each cross section along the thickness direction of the mask plate is larger, and the larger part of the cross section area can play a main supporting role because the larger part can bear larger stress, fig. 1 shows a structural schematic diagram when h1 is greater than h2 in the above embodiment, so that the minimum distance of the shielding region between adjacent rows of the stress of the precise mask plate shown in fig. 1 is transmitted at the first minimum distance h1 in the net tensioning process, the condition that the stress is concentrated in a small range in the net tensioning process can be effectively improved, and the probability of wrinkles in the precise mask plate after net tensioning is reduced; the same applies to the above embodiments when h1 < h2, which is not described in detail in this application.

In another possible embodiment, the rows extend along a first direction x, the columns extend along a second direction y perpendicular to the first direction x, the evaporation openings 10 in the mask plate body 1 are distributed in n columns × m rows, and in any cross section of the mask plate body perpendicular to the thickness direction of the mask plate body, among the evaporation openings 10 adjacently arranged in the column direction, the masking zone 11 between the evaporation openings 10 in the 2i-1 th row and the evaporation openings 10 in the 2 i-th row has a first minimum distance h1, and the masking zone 11 between the evaporation openings 10 in the 2 i-th row and the evaporation openings 10 in the 2i +1 th row has a second minimum distance h2, where m and n are integers greater than 1, 1 ≦ i ≦ m-1)/2 and are integers, and h1 ≠ h 2; the minimum distances of the masking regions 11 between the vapor deposition openings 10 arranged adjacently in the row direction are all the first minimum distances h 1. Because the area of the cross section corresponding to the larger of the first minimum distance h1 and the second minimum distance h2 in each cross section in the thickness direction of the mask plate is larger, and the larger cross section area can play a main supporting role because the larger cross section area can bear larger stress, fig. 4 shows a structural schematic diagram of the precise mask plate in the above embodiment when h1 is greater than h2, the stress is mainly transmitted along the minimum distance of the shielding region between adjacent rows and adjacent columns as the first minimum distance h1 in the net tensioning process of the precise mask plate shown in fig. 4, and the condition that the stress is concentrated in a small range in the net tensioning process can be effectively improved, so that the probability of wrinkles in the precise mask plate after net tensioning is reduced; the same applies to the above embodiments when h1 < h2, which is not described in detail in this application.

In fig. 1 and fig. 4, a case where the rows extend along the first direction x and the columns extend along the second direction y perpendicular to the first direction x is illustrated, and when the rows extend along the second direction y and the columns extend along the first direction x perpendicular to the second direction y, the arrangement method of the evaporation openings 10 is also applicable, and details of the present application are not repeated.

Another possible embodiment is when the rows extend in a first direction x and the columns extend in a second direction y perpendicular to the first direction x: the evaporation openings 10 in the mask plate main body 1 are distributed in n columns x m rows, and in any section of the mask plate main body perpendicular to the thickness direction of the mask plate main body, the evaporation openings 10 are adjacently arranged in the column direction, a shielding region 11 between the evaporation openings 1010 in the 2i-1 th row and the evaporation openings 10 in the 2 i-2 th row has a first minimum distance h1, a shielding region 11 between the evaporation openings 10 in the 2 i-2 th row and the evaporation openings 10 in the 2i +1 th row has a second minimum distance h2, h1 is not equal to h2, wherein m and n are integers which are more than 1, and i is more than or equal to 1 and more than or equal to (m-1)/2 and are integers; in any section of the mask plate main body perpendicular to the thickness direction of the mask plate main body, the minimum distance of a masking zone 11 between the evaporation openings 10 in the 2j-1 th column and the evaporation openings 10 in the 2j +1 th column is a first extension distance h1, the minimum distance of the masking zone 11 between the evaporation openings 10 in the 2j-1 th column and the evaporation openings 10 in the 2j +1 th column is a second extension distance h2, h1 is not equal to h2, j is not less than 1 and not more than (n-1)/2 and is an integer; fig. 3 shows a schematic structural diagram of the above embodiment when h1> h2, and the same applies to the above embodiment when h1 < h2, which is not described in detail herein.

Another possible embodiment is when the rows extend in a first direction x and the columns extend in a second direction y perpendicular to the first direction x: the evaporation openings 10 in the mask plate main body 1 are distributed in n columns and m rows, and in any section of the mask plate main body perpendicular to the thickness direction of the mask plate main body, the evaporation openings 10 are adjacently arranged in the column direction, a shielding region 11 between the evaporation openings 10 in the 2i-1 th row and the evaporation openings 10 in the 2i-1 th row has a first minimum distance h1, a shielding region 11 between the evaporation openings 10 in the 2i-1 th row and the evaporation openings 10 in the 2i +1 th row has a second minimum distance h2, h1 is not equal to h2, wherein m and n are integers greater than 1, and i is greater than or equal to 1 and is greater than or equal to (m-1)/2 and is an integer; in any section of the mask plate main body perpendicular to the thickness direction of the mask plate main body, the minimum distance of a masking zone 11 between the evaporation openings 10 in the 2j-1 th column and the evaporation openings 10 in the 2j +1 th column is a second extension distance h2, the minimum distance of the masking zone 11 between the evaporation openings 10 in the 2j-1 th column and the evaporation openings 10 in the 2j +1 th column is a first extension distance h1, h1 is not equal to h2, j is not less than 1 and not more than (n-1)/2 and is an integer; fig. 5 shows a schematic structure diagram of the above embodiment when h1> h 2.

In the above two embodiments, in the cross section of the mask plate body 1 in the column direction, the masking regions 11 between the adjacent evaporation openings 10 arranged in the column direction are alternately distributed by the first minimum distance h1 and the second minimum distance h2, and in the cross section of the mask plate body 1 in the column direction, the masking regions 11 between the adjacent evaporation openings 10 arranged in the row direction are alternately distributed by the first minimum distance h1 and the second minimum distance h2, and h1 is not equal to h2, because the cross section corresponding to the larger one of the first minimum distance h1 and the second minimum distance h2 is larger in each cross section in the thickness direction of the mask plate itself, and the portion with the larger cross section area can play a main supporting role because it can bear larger stress, thereby ensuring the connection between each row and each column, the strength of the masked zone 11 corresponding to the greater of h1 and h2, and the portion of the masked zone 11 acting as the primary stress transfer bridge, such that when the screen is tensioned, stress is transferred along the portion of the masked zone 11 corresponding to the greater of h1 and h 2.

In fig. 3 and fig. 5, the case where the rows extend along the first direction x and the columns extend along the second direction y perpendicular to the first direction x is illustrated as an example, and the arrangement manner of the evaporation openings 10 is also applicable when the rows extend along the second direction y and the columns extend along the first direction x perpendicular to the second direction y, which is not described in detail in this application.

In the above-mentioned precision mask, when the row total number m that contains is the even number, can be in the arbitrary cross section of the perpendicular to self thickness direction of mask main part, will be located along the evaporation plating opening 10 of arranging adjacently in the direction of being listed as, first minimum distance h1 between first line and the second line sets up to be greater than second minimum distance h2 between second line and the third line to can increase the total area of the great position department of holding power in whole mask district, avoided stress concentration to lead to the condition that the fold appears in mask main part 1, promote the evaporation plating yield.

In the above-mentioned precision mask, when the total number n of columns that contains is the even number, can be in the arbitrary cross section of the perpendicular to self thickness direction of mask main part, will be located along the adjacent evaporation plating opening 10 who arranges in the row direction, set up first minimum distance h1 between first row and the second row into being greater than the second minimum distance h2 between second row and the third row, thereby can increase the total area of the great position department of holding power in whole mask zone, avoided stress concentration to lead to the condition that the fold appears in mask main part 1, promote the evaporation plating yield.

In one possible embodiment, as shown in fig. 6, the mask plate body 1 includes a vapor deposition surface 13 and a glass surface 12 opposite to the vapor deposition surface 13, each vapor deposition opening 10 includes a first half-engraved hole 101 and a second half-engraved hole 102 arranged along an arrangement direction of the glass surface 12 and the vapor deposition surface 13, the first half-engraved hole 101 communicates with the second half-engraved hole 102, the first half-engraved hole 101 includes a first opening 1011 located on the glass surface 12, and the second half-engraved hole 102 includes a second opening 1021 located on the vapor deposition surface 13.

In each of the above possible embodiments, any cross section of any cross section perpendicular to the thickness direction of the mask body 1 may be the glass surface 12, as shown in fig. 2; it may be a vapor-deposited surface 13, as shown in FIG. 6; or any cross section which is positioned between the evaporation surface 13 and the glass surface 12 and is vertical to the thickness direction of the mask plate main body 1.

In the above embodiment, the glass surface 12 is the surface of the mask plate body 1 away from the evaporation source, the evaporation surface 13 is the surface of the mask plate body 1 close to the evaporation source, each evaporation opening 10 is formed by respectively adopting a twice half-etching mode from the glass surface 12 and the evaporation surface 13, and the formation of the evaporation openings 10 by adopting a twice half-etching process can ensure that the edges of the formed evaporation openings 10 are smooth, so that the evaporation material passing through the evaporation openings 10 is not easy to adhere to the evaporation openings 10, thereby saving the evaporation material and making the evaporation effect better. In a possible embodiment, the first half-engraved hole 101 gradually converges from the end of the mask body 1 close to the glass surface 12 to the end far away from the glass surface 12, and the second half-engraved hole 102 gradually converges from the end of the mask body 1 close to the evaporation surface 13 to the end far away from the evaporation surface 13 and then communicates with the first half-engraved hole 101.

In the above embodiment, the size of the second opening 1021 of the second half-engraved hole 102 covers the size of the first opening 1011 of the first half-engraved hole 101, so as to ensure that the evaporation material entering from the second half-engraved hole 102 can fill the first half-engraved hole 101.

In a possible embodiment, when the first minimum distance h1 is greater than the second minimum distance h2, h1 is greater than or equal to 2 μm and h2 is greater than or equal to 0 μm in the evaporation surface 13 perpendicular to the thickness direction of the mask body, as shown in fig. 6, which is a schematic diagram of h2 being equal to 0 μm in the evaporation surface 13; alternatively, the first and second electrodes may be,

when the first minimum distance h1 is smaller than the second minimum distance h2, h2 is greater than or equal to 2 μm and h1 is greater than or equal to 0 μm in the evaporation surface 13.

In the above embodiment, the smaller of the first minimum distance h1 and the second minimum distance h2 in the evaporation surface 13 is greater than or equal to 0 μm, and the larger is greater than or equal to 2 μm, so as to ensure the material strength of the shielding area corresponding to the larger, and the larger is used as a stress main transfer bridge, thereby preventing wrinkles from being generated due to uneven stress when the net is stretched.

In a possible embodiment, the shielding regions are not only arranged in a wide-narrow interval in the direction perpendicular to the evaporation surface 13 and the glass surface 12 of the mask body 1, i.e. such that the occlusion zone comprises a portion corresponding to the first minimum distance h1 and a portion corresponding to the second minimum distance h2, h1 is not equal to h2, meanwhile, the thickness of the mask body 1 is also differently made, and the thickness of the region corresponding to the minimum distance h1 in the mask body 1 is set to be greater than or less than the thickness of the region corresponding to the minimum distance h2 in the mask body 1, specifically, as shown in fig. 6, when the first minimum distance h1 is greater than the second minimum distance h2, along the thickness direction of the mask main body 1, the thickness of a region corresponding to the first minimum distance h1 in the mask main body 1 is greater than the thickness of a region corresponding to the second minimum distance h2 in the mask main body 1;

when the first minimum distance h1 is smaller than the second minimum distance h2, along the thickness direction of the mask plate main body 1, the thickness of the region corresponding to the first minimum distance h1 in the mask plate main body 1 is smaller than the thickness of the region corresponding to the second minimum distance h2 in the mask plate main body 1, so that the area of the section corresponding to the larger one of the first minimum distance h1 and the second minimum distance h2 in each section along the thickness direction of the mask plate is larger, the material strength of the shielding region corresponding to the larger one of h1 and h2 is ensured, the shielding region serves as a stress main transfer bridge, and wrinkles caused by uneven stress during screen stretching are prevented.

In a feasible implementation mode, the mask plate main body 1 is made of iron-nickel alloy, the intensity of the mask plate is guaranteed by adopting the iron-nickel alloy, meanwhile, the mask plate is convenient to process and manufacture, and on the other hand, the material is simple and easy to obtain and low in cost.

In one possible embodiment, the thickness of the mask body 1 is 10 μm to 59 μm to ensure good support when performing evaporation.

The application also provides a mask plate assembly, which comprises a mask plate frame, support bars and any one of the precision mask plates provided in the technical scheme, wherein the support bars are fixedly connected to the mask plate frame, and the precision mask plates are arranged on the support bars and fixedly connected with the mask plate frame.

After the mask plate component is used for evaporation, the evaporation yield is greatly improved, the phenomenon of color mixing in the evaporation is avoided, the material utilization rate is improved, and the manufacturing cost is saved.

As will be apparent to those skilled in the art, for convenience and brevity of description, the specific working processes of the systems, modules and units described above may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again. It should be understood that the scope of the present application is not limited thereto, and any equivalent modifications or substitutions can be easily made by those skilled in the art within the technical scope of the present application, and are intended to be covered by the present application.

It should also be noted that the exemplary embodiments mentioned in this application describe some methods or systems based on a series of steps or devices. However, the present application is not limited to the order of the above-described steps, that is, the steps may be performed in the order mentioned in the embodiments, may be performed in an order different from the order in the embodiments, or may be performed simultaneously.

Claims

1. A precise mask plate is characterized by comprising a mask plate main body, wherein the mask plate main body comprises a plurality of evaporation openings distributed in rows and columns and a masking area distributed around each evaporation opening, the minimum distance of the masking area in any section of the mask plate main body perpendicular to the thickness direction of the mask plate main body and located along the row direction and/or among the evaporation openings adjacently arranged along the column direction at least comprises a first minimum distance h1 and a second minimum distance h2, h1 is not equal to h2, and in each section of the mask plate along the thickness direction of the mask plate main body, the area of the section corresponding to the larger one of the first minimum distance h1 and the second minimum distance h2 is larger;

2. A precision mask according to claim 1, wherein the evaporation openings in the mask body are distributed in n columns by m rows, and in any cross section of the mask body perpendicular to its thickness direction, among the evaporation openings adjacently arranged in the column direction, the minimum distance of the masking zone between the evaporation openings of the 2i-1 row and the evaporation openings of the 2i row is a first minimum distance h1, and the minimum distance of the masking zone between the evaporation openings of the 2i row and the evaporation openings of the 2i +1 row is a second minimum distance h2, h1 is not equal to h2, wherein m and n are integers greater than 1, and 1 is not less than i (m-1)/2 and is an integer.

3. A precision mask according to claim 2, wherein the minimum distance of the masking zone between the evaporation openings adjacently arranged in the row direction is a first minimum distance h1 or a second minimum distance h2, and h1 ≠ h 2.

4. The precision mask according to claim 2, wherein, in any cross section of the mask body perpendicular to its thickness direction, among the evaporation openings adjacently arranged in the row direction, the minimum distance of the masking region between the evaporation openings of the 2j-1 column and the evaporation openings of the 2j column is a first extension distance h1, the minimum distance of the masking region between the evaporation openings of the 2j column and the evaporation openings of the 2j +1 column is a second extension distance h2, h1 ≠ h2, j ≦ n-1)/2, and is an integer, or,

in any section of the mask plate main body perpendicular to the thickness direction of the mask plate main body, the minimum distance of a masking zone between the evaporation openings of the 2j-1 column and the evaporation openings of the 2j column is a second extension distance h2, the minimum distance of the masking zone between the evaporation openings of the 2j column and the evaporation openings of the 2j +1 column is a first extension distance h1, h1 is not equal to h2, j is not less than 1 and not more than (n-1)/2, and the minimum distance is an integer.

5. A precision mask according to claim 1, wherein the mask body includes a deposition surface and a glass surface opposite to the deposition surface, each of the deposition openings includes a first half-engraved hole and a second half-engraved hole arranged in an arrangement direction of the glass surface and the deposition surface, the first half-engraved hole is communicated with the second half-engraved hole, the first half-engraved hole includes a first opening located in the glass surface, and the second half-engraved hole includes a second opening located in the deposition surface.

6. A precision mask according to claim 5, wherein when the first minimum extension h1 is greater than the second minimum extension h2, the thickness of the region of the mask body corresponding to the minimum extension h1 is greater than the thickness of the region of the mask body corresponding to the minimum extension h2 along the thickness direction of the mask body itself;

7. A precision mask according to claim 5, wherein the first half-engraved hole is gradually closed from the end of the mask body near the glass surface to the end far from the glass surface, and the second half-engraved hole is gradually closed from the end of the mask body near the evaporation surface to the end far from the evaporation surface and then communicates with the first half-engraved hole.

8. The precision mask according to claim 1, wherein the mask body is made of iron-nickel alloy.

9. A precision mask according to claim 8, wherein the thickness of the mask body is 10 μm to 59 μm.

10. A mask plate assembly comprising the precision mask plate according to any one of claims 1 to 9.