CN113192862A - Substrate processing apparatus using light source built in spin chuck - Google Patents

Substrate processing apparatus using light source built in spin chuck Download PDF

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Publication number
CN113192862A
CN113192862A CN202110088328.3A CN202110088328A CN113192862A CN 113192862 A CN113192862 A CN 113192862A CN 202110088328 A CN202110088328 A CN 202110088328A CN 113192862 A CN113192862 A CN 113192862A
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China
Prior art keywords
substrate
light source
spin chuck
processing apparatus
heating module
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CN202110088328.3A
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Chinese (zh)
Inventor
李在圣
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Aisi Co ltd
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Mujin Electronics Co ltd
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Publication of CN113192862A publication Critical patent/CN113192862A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention relates to a substrate processing apparatus using a light source built in a spin chuck. The substrate processing apparatus includes: a spin chuck that rotates while supporting the substrate; a heating module built in the spin chuck and uniformly heating a lower surface of the substrate supported and rotated by the spin chuck by a light radiation method; a light-transmitting plate coupled to the spin chuck and allowing light emitted toward the substrate by a heating module built in the spin chuck to pass therethrough; and a control module which controls an amount of light irradiated onto the lower surface of the substrate by the heating module to control a temperature of the substrate. According to the present invention, there is provided a substrate processing apparatus using a light source built in a spin chuck capable of precisely adjusting and maintaining the temperature of a substrate to be processed in a semiconductor process.

Description

Substrate processing apparatus using light source built in spin chuck
Technical Field
The present invention relates to a substrate processing apparatus using a light source built in a spin chuck, and more particularly, to a substrate processing apparatus using a light source built in a spin chuck, by which a temperature of a substrate to be processed in a semiconductor process can be precisely adjusted and maintained.
Background
Generally, in a process of processing a semiconductor substrate, in a cleaning process, an etching process, a drying process, and the like, which are performed on the substrate using a specific fluid, the temperature of the fluid significantly affects the performance of the semiconductor process.
As one of the related arts for adjusting the temperature of the fluid within an appropriate range, there is known a technology in which a fluid heated at a desired temperature is supplied by a distributor onto a substrate which is disposed on a spin chuck and is rotated at a high speed.
However, according to the related art, there is a problem in that a deviation is generated between an actual temperature of the fluid when the fluid is supplied onto the surface of the substrate and a target process temperature due to a temperature difference between the substrate surface temperature and the temperature of the fluid supplied by the dispenser.
In addition, there is a problem in that, when the substrate provided on the spin chuck is rotated, the temperature of the substrate is lowered in the process of diffusing the high-temperature fluid from the center of the substrate to the edge, and thus the uniformity of the temperature to be maintained for the entire surface of the substrate is deteriorated.
The decrease in the temperature of the fluid on the surface of the substrate, the deviation from the target temperature, and the temperature unevenness for the entire surface of the substrate as described above are factors that decrease the efficiency of the semiconductor process.
Documents of the related art
Patent document
(patent document 1) korean patent application laid-open No. 10-2004-0070635 (published 8/11/2004, title: process chamber of rapid thermal processing system capable of uniformly transferring heat to loaded wafer)
(patent document 2) korean patent application laid-open No. 10-2018-0014438 (published 2/8/2018, title: electrostatic chuck with LED heating unit)
Disclosure of Invention
Technical problem
The present invention is directed to providing a substrate processing apparatus using a light source built in a spin chuck, by which a temperature of a substrate to be processed in a semiconductor process can be precisely adjusted and maintained.
The present invention is also directed to providing a substrate processing apparatus using a light source built in a spin chuck, in which the light source for heating a substrate is formed as a plurality of Light Emitting Diode (LED) groups arranged in a concentric circle shape, and which controls the intensities of the plurality of LED groups to be operated and the plurality of LED groups to be operated all or individually so as to precisely and rapidly adjust the temperature of the substrate to meet a target temperature in a semiconductor process.
Means for solving the problems
According to an aspect of the present invention, there is provided a substrate processing apparatus using a light source built in a spin chuck. The substrate processing apparatus includes: a spin chuck that rotates while supporting the substrate; a heating module built in the spin chuck and uniformly heating a lower surface of the substrate supported and rotated by the spin chuck by a light radiation method; a light-transmitting plate coupled to the spin chuck and allowing light emitted toward the substrate by a heating module built in the spin chuck to pass therethrough; and a control module which controls an amount of light irradiated onto the lower surface of the substrate by the heating module to control a temperature of the substrate.
In the substrate processing apparatus using a light source built in a spin chuck according to the present invention, the spin chuck may include: an outer body having a substrate support formed thereon for supporting a substrate; and an inner body recessed below the outer body to provide a space for the built-in heating module, and formed with a hole in a central region.
In the substrate processing apparatus using a light source built in a spin chuck according to the present invention, the heating module may include: a light source substrate disposed in an inner space formed by a height difference between the outer body and the inner body, not in direct contact with the inner body of the spin chuck; a light source unit including a plurality of LED groups arranged in a concentric circle shape from a center region to an edge region of an upper surface of two surfaces of the light source substrate facing the substrate and driven independently of each other; a cooling unit having an upper surface coupled to a lower surface of the light source substrate and having a cooling flow path formed therein through which cooling water flows to prevent the light source substrate from overheating; and a heating module support configured to support the light source substrate coupled to the cooling unit while passing through a hole formed in an inner body constituting the spin chuck in a state of being coupled to a lower surface of the cooling unit.
In the substrate processing apparatus using the light source built in the spin chuck according to the present invention, the control module may control one or more of the plurality of LED groups constituting the light source unit to be operated, and may control the luminous intensity of the operating LED group.
In the substrate processing apparatus using the light source built in the spin chuck according to the present invention, the light source substrate and the cooling unit constituting the heating module may be formed of a material having thermal conductivity.
In the substrate processing apparatus using the light source built in the spin chuck according to the present invention, the lower surface of the light source substrate constituting the heating module and the upper surface of the cooling unit may be bonded to each other without a separation gap.
In the substrate processing apparatus using the light source built in the spin chuck according to the present invention, the area of the lower surface of the light source substrate and the area of the upper surface of the cooling unit may be the same.
The invention has the advantages of
According to the present invention, there is provided a substrate processing apparatus using a light source built in a spin chuck capable of precisely adjusting and maintaining the temperature of a substrate to be processed in a semiconductor process.
Further, there is provided a substrate processing apparatus using a light source built in a spin chuck, in which the light source for heating a substrate is formed into a plurality of LED groups arranged in a concentric circle shape, and which controls the intensities of the plurality of LED groups to be operated and the plurality of LED groups to be operated all or individually to adjust the temperature of the substrate accurately and rapidly to meet a target temperature in a semiconductor process.
Drawings
Fig. 1 is a plan view of a substrate processing apparatus using a light source built in a spin chuck according to an embodiment of the present invention.
Fig. 2 is a sectional view of a substrate processing apparatus using a light source built in a spin chuck according to an embodiment of the present invention.
Fig. 3 is an enlarged view of a portion a of fig. 2.
Fig. 4 is an assembled perspective view of a substrate processing apparatus using a light source built in a spin chuck according to an embodiment of the present invention.
Fig. 5 is an exploded perspective view of a substrate processing apparatus using a light source built in a spin chuck according to an embodiment of the present invention.
Fig. 6 is a view for describing an exemplary configuration in which the control module controls the light source unit constituting the heating module in the embodiment of the present invention.
Fig. 7 is a view showing an exemplary configuration of a cooling unit coupled to a light source substrate in an embodiment of the present invention.
Detailed Description
The specific structural and functional descriptions of the embodiments of the present invention disclosed herein are illustrative only for the purpose of describing embodiments according to the inventive concept, and these embodiments according to the inventive concept may be implemented in various forms and should not be construed as being limited to the embodiments described herein.
Embodiments according to the inventive concept may be modified in various ways and may have various forms, such that they will be shown in the drawings and described in detail herein. It should be understood, however, that there is no intention to limit embodiments according to the concepts of the present invention to the specific forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the present invention.
The terms first, second, etc. may be used to describe various components, but these components should not be limited by these terms. These terms may be used only to distinguish one element from another, e.g., a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element, without departing from the scope of the present invention.
When a component is described as being "connected" or "coupled" to another component, it can be directly connected or coupled to the other component, but it is understood that other components can also be present between the component and the other component. In contrast, when an element is described as being "directly connected" or "directly coupled" to another element, it is to be understood that no other element may be present between the element and the other element. Other expressions describing the relationship between components, i.e., "between … …" and "immediately between … …" or "adjacent to … …" and "directly adjacent to … …" should also be construed as described above.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The singular forms include the plural unless the context clearly dictates otherwise. In this specification, the terms "comprises," "comprising," "includes," "including," "has," "having," and the like, are used to specify the presence of stated features, quantities, steps, operations, components, elements, or combinations thereof, and it is to be understood that these do not preclude the presence or addition of one or more other features, quantities, steps, operations, components, elements, or combinations thereof.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. General terms defined in dictionaries should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is a plan view of a substrate processing apparatus using a light source built in a spin chuck according to an embodiment of the present invention, fig. 2 is a cross-sectional view of the substrate processing apparatus using the light source built in the spin chuck according to the embodiment of the present invention, fig. 3 is an enlarged view of a portion a of fig. 2, fig. 4 is an assembled perspective view of the substrate processing apparatus using the light source built in the spin chuck according to the embodiment of the present invention, fig. 5 is an exploded perspective view of the substrate processing apparatus using the light source built in the spin chuck according to the embodiment of the present invention, and fig. 6 is a view for describing an exemplary configuration in which a control module controls a light source unit constituting a heating module in the embodiment of the present invention.
Referring to fig. 1 to 6, a substrate processing apparatus using a light source built in a spin chuck according to an embodiment of the present invention includes a spin chuck 10, a substrate support 20, a heating module 30, a light-transmitting plate 40, and a control module 50.
The spin chuck 10 is a component that is rotated at a high speed by a rotational driving force provided by a driving unit (not shown) and simultaneously supports a substrate W, which is an object to be processed by a semiconductor process, in a state of being disposed in a chamber in which the semiconductor process is performed. For example, although not shown in the drawings, in a state in which a dispenser spraying chemicals for performing a specific semiconductor process is disposed above the spin chuck 10 by a driving unit such as a robot arm or the like and sprays the chemicals toward an upper surface of the substrate W, the substrate W disposed on the spin chuck 10 may be rotated at a high speed by the rotation of the spin chuck 10.
For example, as shown in fig. 5, the spin chuck 10 may include: an outer body 110 on which a substrate support 20 for supporting a substrate W is formed; and an inner body 120 which is recessed below the outer body to provide a space for the built-in heating module 30, and is formed with a hole H at a central region.
The substrate supports 20 are provided as a plurality of substrate supports 20 formed along the edge of the outer body 110 of the spin chuck 10, and the substrate supports 20 are assemblies that support the substrate W rotated at a high speed by the rotation of the spin chuck 10 so that they are not separated.
For example, the substrate support 20 may be configured such that the support pins 22 and the clamp pins 24 are formed in pairs, and the clamp pins 24 may be rotated to assist in supporting the substrate W in a state where the support pins 22 mainly support the substrate W. For example, the support pin 22 may be configured to be formed with a protrusion at a point spaced apart from a center point thereof. When the support pins 22 rotate about the center point, the protrusions push and press the side surfaces of the substrate W, so that the substrate W can be stably supported by the chucking pins 24. Accordingly, the support pins 22 may be configured such that the substrate W is not separated from the spin chuck 10 although the substrate W is rotated at a high speed.
The heating module 30 is a component built in the spin chuck 10 and uniformly heats the lower surface of the substrate W supported by the spin chuck 10 and rotated at a high speed by a light irradiation method.
For example, as shown in fig. 5 and 6, the heating module 30 may include a light source substrate 310, a light source unit 320, a cooling unit 330, and a heating module support 340.
The light source substrate 310 is disposed in an inner space formed by a height difference between the outer body 110 and the inner body 120 without being in direct contact with the inner body 120 of the spin chuck 10. The light source substrate 310 is a component on which the light source unit 320 is mounted and may be a printed circuit board.
The light source unit 320 includes a plurality of LED groups CH1 to CHn, wherein the plurality of LED groups CH1 to CHn are arranged in a concentric circle shape from a central region to an edge region of an upper surface of the two surfaces of the light source substrate 310 facing the substrate W and are driven independently of each other.
The cooling unit 330 functions to prevent the light source substrate 310 from overheating.
For example, referring further to fig. 7 showing an exemplary configuration of the cooling unit 330 coupled to the light source substrate 310, an upper surface of the cooling unit 330 may be coupled to a lower surface of the light source substrate 310, a cooling flow path 332 through which cooling water flows to prevent the light source substrate 310 from being overheated may be formed in the cooling unit 330, and an inlet 334 through which the cooling water is introduced and an outlet 336 through which the cooling water is discharged may be provided at both ends of the cooling flow path 332.
For example, the light source substrate 310 and the cooling unit 330 constituting the heating module 30 may be formed of a material having thermal conductivity.
As a specific example, at least the lower surface of the light source substrate 310, the entirety or at least the upper surface of the cooling unit 330, and the cooling flow path 332 may be formed of a material having high thermal conductivity such as metal, the lower surface of the light source substrate 310 and the upper surface of the cooling unit 330 may be configured to be adhered to each other without a separation gap, and the area of the lower surface of the light source substrate 310 and the area of the upper surface of the cooling unit 330 may be configured to be the same.
According to the above configuration, the thermal conductivity between the light source substrate 310 and the cooling unit 330 can be improved, and thus the temperature of the light source substrate 310 can be rapidly reduced using the cooling water or the cooling gas flowing through the cooling flow path 332.
The heating module support 340 is a component that supports the light source substrate 310 coupled to the cooling unit 330 while passing through a hole H formed in the inner body 120 constituting the spin chuck 10 in a state where one end portion thereof is coupled to the lower surface of the cooling unit 330. The other end of the heating module support 340 may be coupled to a chamber structure (not shown) to stably support the heating module 30. As described above, the light source substrate 310 and the cooling unit 330 adhered to the light source substrate 310 are not in direct contact with the inner body 120 of the spin chuck 10, but are disposed in the inner space formed by the height difference between the outer body 110 and the inner body 120. Therefore, the heating module 30 does not move and maintains a stable state coupled with the chamber although the spin chuck rotates at a high speed.
The light-transmissive plate 40 is coupled to the rotary chuck 10 and allows light emitted toward the substrate W by the heating module 30 built in the rotary chuck 10 to pass therethrough, and at the same time, the light-transmissive plate 40 prevents all materials including chemicals and the like within the chamber from being introduced into the heating module 30 such that the light source substrate 310 and the light source unit 320 constituting the heating module 30 are contaminated.
For example, the light-transmitting plate 40 may be a circular plate-shaped member having the same diameter as that of the rotary chuck 10, a plurality of grooves bent inward without overlapping with the plurality of support pins 22 and clamping pins 24 formed in the outer body 110 of the rotary chuck 10 may be formed in an edge region of the light-transmitting plate 40, and a region other than the grooves in the edge region of the light-transmitting plate 40 may be coupled to the upper surface of the outer body 110 of the rotary chuck 10.
For example, quartz may be used as the material of the light-transmissive plate 40, but the material of the light-transmissive plate 40 is not limited thereto, and any material having high light transmittance, heat resistance, and corrosion resistance may be applied to the light-transmissive plate 40.
The control module 50 is a component that controls the temperature of the substrate W by controlling the amount of light irradiated onto the lower surface of the substrate W by the light source unit 320 constituting the heating module 30.
For example, the control module 50 may control one or more of the plurality of LED groups CH1 through CHn constituting the light source unit 320 to be operated, and may control the light emission intensity of the operating LED group.
More specifically, the light source unit 320 may include a plurality of LED groups CH1 to CHn uniformly arranged in a concentric circle shape from a central region to an edge region of an upper surface of the light source substrate 310 and driven independently of each other, the LED groups CH1 to CHn having the concentric circle shape may each be connected to the control module 50 through electrically independent channels, and the control module 50 may operate all or some of the LED groups CH1 to CHn. Further, the control module 50 may uniformly control all the light emission intensities of the LED groups CH1 through CHn, or may differently control the light emission intensities of the LED groups CH1 through CHn for each channel.
As described above in detail, according to the present invention, there is provided a substrate processing apparatus using a light source built in a spin chuck capable of precisely adjusting and maintaining the temperature of a substrate to be processed in a semiconductor process.
Further, there is provided a substrate processing apparatus using a light source built in a spin chuck, in which the light source for heating a substrate is formed into a plurality of LED groups arranged in a concentric circle shape, and which controls the intensity of the plurality of LED groups to be operated and the plurality of LED groups to be operated all or individually so that the temperature of the substrate can be adjusted accurately and rapidly to meet a target temperature in a semiconductor process.
Reference numerals
10: rotary chuck
20: substrate support
22: support pin
24: clamping pin
30: heating module
40: light-transmitting plate
50: control module
110: outer body
120: inner body
310: light source substrate
320: light source unit
330: cooling unit
332: cooling flow path
334: inlet port
336: an outlet
340: heating module support
W: substrate
H: hole(s)
CH1 to CHN: LED group

Claims (7)

1. A substrate processing apparatus using a light source built in a spin chuck, the substrate processing apparatus comprising:
a spin chuck that rotates while supporting the substrate;
a heating module built in the spin chuck and uniformly heating a lower surface of the substrate supported and rotated by the spin chuck by a light irradiation method;
a light-transmissive plate coupled to the spin chuck and allowing light emitted toward the substrate by the heating module built in the spin chuck to pass therethrough; and
a control module which controls an amount of light irradiated from the heating module onto a lower surface of the substrate to control a temperature of the substrate.
2. The substrate processing apparatus of claim 1, wherein the spin chuck comprises:
an outer body having a substrate support formed thereon for supporting the substrate; and
an inner body recessed below the outer body to provide a space in which the heating module is built, and formed with a hole in a central region.
3. The substrate processing apparatus of claim 2, wherein the heating module comprises:
a light source substrate disposed in an inner space formed by a height difference between the outer body and the inner body, not in direct contact with the inner body of the spin chuck;
a light source unit including a plurality of LED groups arranged in a concentric circle shape from a center region to an edge region of an upper surface of two surfaces of the light source substrate facing the substrate and driven independently of each other;
a cooling unit having an upper surface coupled to a lower surface of the light source substrate and having a cooling flow path formed therein through which cooling water flows to prevent the light source substrate from overheating; and
a heating module support configured to support the light source substrate coupled to the cooling unit while passing through the hole formed in the inner body constituting the spin chuck in a state of being coupled to a lower surface of the cooling unit.
4. The substrate processing apparatus according to claim 3, wherein the control module controls one or more of the plurality of LED groups constituting the light source unit to be operated, and controls emission intensity of the LED group in operation.
5. The substrate processing apparatus according to claim 3, wherein the light source substrate and the cooling unit constituting the heating module are formed of a material having thermal conductivity.
6. The substrate processing apparatus according to claim 5, wherein a lower surface of the light source substrate and an upper surface of the cooling unit constituting the heating module are bonded to each other without a separation gap.
7. The substrate processing apparatus according to claim 6, wherein an area of a lower surface of the light source substrate and an area of an upper surface of the cooling unit are the same.
CN202110088328.3A 2020-01-29 2021-01-22 Substrate processing apparatus using light source built in spin chuck Pending CN113192862A (en)

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KR100523643B1 (en) 2003-02-04 2005-10-25 동부아남반도체 주식회사 Process chamber of a rapid thermal processing apparatus capable of uniformly heat transferring to a wafer loaded therein
US9728430B2 (en) 2015-06-29 2017-08-08 Varian Semiconductor Equipment Associates, Inc. Electrostatic chuck with LED heating
US10720343B2 (en) * 2016-05-31 2020-07-21 Lam Research Ag Method and apparatus for processing wafer-shaped articles
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