CN113436987A - Substrate processing apparatus using light source embedded in spin chuck - Google Patents

Substrate processing apparatus using light source embedded in spin chuck Download PDF

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Publication number
CN113436987A
CN113436987A CN202110284008.5A CN202110284008A CN113436987A CN 113436987 A CN113436987 A CN 113436987A CN 202110284008 A CN202110284008 A CN 202110284008A CN 113436987 A CN113436987 A CN 113436987A
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CN
China
Prior art keywords
substrate
light source
temperature
spin chuck
processing apparatus
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Pending
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CN202110284008.5A
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Chinese (zh)
Inventor
李在圣
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Aisi Co.,Ltd.
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Mujin Electronics Co ltd
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Publication of CN113436987A publication Critical patent/CN113436987A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/10—Controlling the intensity of the light
    • H05B45/18—Controlling the intensity of the light using temperature feedback

Abstract

The present invention relates to a substrate processing apparatus using a light source embedded in a spin chuck, comprising: a spin chuck for supporting the substrate while rotating; a heating module embedded in the spin chuck without contacting therewith, including a light source unit emitting light to a lower surface of the substrate rotated by being supported by the spin chuck and a light source substrate on which the light source unit is mounted; an infrared temperature measuring unit which is installed on an upper surface of the light source substrate on which the light source unit is installed to face a lower surface of the substrate without overlapping the light source unit, and measures a substrate temperature by an infrared detection method; a light-transmitting plate coupled with the spin chuck and transmitting light emitted by the light source unit toward the substrate; and a control module controlling a temperature of the substrate by controlling an amount of light emitted to a lower surface of the substrate by the light source unit, comparing a measured temperature of the substrate received from the infrared temperature measuring unit with a set critical temperature range, and controlling an operation of the light source unit according to a result of comparing the measured temperature of the substrate with the critical temperature range.

Description

Substrate processing apparatus using light source embedded in spin chuck
Technical Field
The present invention relates to a substrate processing apparatus using a light source embedded in a spin chuck. More particularly, the present invention relates to a substrate processing apparatus using a light source embedded in a spin chuck, in which, in adjusting the temperature of a substrate to be processed in a semiconductor process using a light source mounted on a light source substrate, the temperature of the substrate is measured by an infrared detection method, and the light emission intensity of the light source is adjusted according to the measured substrate temperature, thereby uniformly and precisely adjusting and maintaining the temperature of the entire area of the substrate so as to satisfy process conditions.
Background
Generally, in many processes of processing semiconductor substrates, the temperature of a fluid during cleaning, etching, and drying of the substrate using a particular fluid significantly affects the performance of the semiconductor process.
As one of the prior arts for adjusting the temperature of a fluid to an appropriate range, there is known a technique in which a fluid heated to a desired temperature is supplied by a distributor onto a substrate disposed on a spin chuck rotating at a high speed.
However, according to the related art, there is a problem in that, since there is a temperature deviation between the surface temperature of the substrate and the temperature of the fluid supplied through the dispenser, there occurs a deviation between a process target temperature and an actual temperature of the fluid when the fluid is supplied to the surface of the substrate.
In addition, when the substrate provided on the spin chuck is rotated, there are problems in that: since the temperature decreases when the high-temperature fluid diffuses from the center of the substrate to the edge of the substrate, the uniformity of the temperature to be maintained over the entire surface of the substrate is deteriorated.
A temperature decrease of the fluid on the surface of the substrate, a deviation from a target temperature, and temperature unevenness over the entire surface of the substrate act as factors that decrease the efficiency of the semiconductor process.
[ related art documents ]
(patent document 1) korean patent laid-open publication No. 10-2004-0070635 (published: 8/11/2004, name: process chamber for rapid thermal processing system capable of uniformly transferring heat to a loaded wafer)
(patent document 2) korean patent laid-open publication No. 10-2018-0014438 (publication date: 2018, 2, 8, title: electrostatic chuck with LED heating part)
Disclosure of Invention
1. Technical problem
A technical object of the present invention is to provide a substrate processing apparatus using a light source embedded in a spin chuck, in which, in adjusting the temperature of a substrate to be processed in a semiconductor process using a light source mounted on a light source substrate, the temperature of the substrate is measured by an infrared detection method, and the light emission intensity of the light source is adjusted according to the measured substrate temperature, thereby uniformly and precisely adjusting and maintaining the temperature of the entire area of the substrate so as to satisfy process conditions.
Another technical object of the present invention is also to provide a substrate processing apparatus using a light source embedded in a spin chuck, in which the light source for heating a substrate is provided as a plurality of Light Emitting Diode (LED) channel groups arranged in concentric circles, and the operating intensities of whether to operate the plurality of LED channel groups and the plurality of LED channel groups are collectively or separately controlled, thereby accurately and rapidly adjusting the temperature of the substrate to a level corresponding to a target temperature in a semiconductor process.
2. Solution to the problem
A substrate processing apparatus using a light source embedded in a spin chuck according to the present invention includes: a spin chuck that rotates while supporting a substrate; a heating module embedded in the spin chuck without contacting the spin chuck, the heating module including a light source unit configured to emit light to a lower surface of the substrate rotated by being supported by the spin chuck and a light source substrate on which the light source unit is mounted; an infrared temperature measuring unit which is mounted on an upper surface on which the light source unit is mounted, among two surfaces of the light source substrate constituting the heating module, so as to face a lower surface of the substrate without overlapping the light source unit, and measures a temperature of the substrate by an infrared detection method; a light-transmitting plate coupled with the spin chuck and transmitting light emitted toward the substrate by a light source unit constituting a heating module; and a control module controlling a temperature of the substrate by controlling an amount of light emitted to a lower surface of the substrate by the light source unit constituting the heating module, comparing a measured temperature of the substrate received from the infrared temperature measuring unit with a set critical temperature range, and controlling an operation of the light source unit constituting the heating module according to a result of the comparison between the measured temperature of the substrate and the critical temperature range.
The light source unit may include: a plurality of Light Emitting Diode (LED) channel groups arranged in a concentric circle shape from a center region to an edge region of an upper surface facing the substrate among two surfaces of the light source substrate, and the plurality of LED channel groups constituting the light source unit may be driven independently of each other according to control of the control module.
The infrared temperature measuring unit may include a plurality of infrared sensors arranged along a line connecting a center region and an edge region of the upper surface of the light source substrate, and the plurality of infrared sensors constituting the infrared temperature measuring unit may measure the temperature of the substrate for a plurality of sections corresponding to arrangement positions of the plurality of infrared sensors.
The critical temperature range may include critical temperature ranges of sections set for the plurality of sections, and the control module may compare measured temperatures of the sections measured by the plurality of infrared sensors constituting the infrared temperature measurement unit with the critical temperature ranges of the sections, and may independently drive the plurality of LED channel groups constituting the light source unit according to a result of comparison between the measured temperatures of the sections and the critical temperature ranges of the sections.
When the measured temperature of the substrate deviates from the critical temperature range, the control module may perform control such that substrate temperature state alarm information is output.
When the measured temperature of the substrate exceeds an upper temperature limit constituting the critical temperature range, the control module may perform control such that the amount of light emitted by the light source is reduced.
When the measured temperature of the substrate is less than a lower temperature limit constituting the critical temperature range, the control module may perform control such that the light emission amount of the light source is increased.
The spin chuck may include: an outer body on which a substrate support configured to support a substrate is formed; and an inner body that is recessed more downward than the outer body to provide a space in which the heating module is embedded, and has a hollow portion formed in a central region of the inner body.
The light source substrate may be disposed in an embedding space formed due to a height difference between the outer body and the inner body without being in direct contact with the inner body of the spin chuck, and the light source unit may include a plurality of LED channel groups arranged in a concentric circle shape from a central region to an edge region of an upper surface facing the substrate among two surfaces of the light source substrate and driven independently of each other.
The heating module may further include: a cooling unit having an upper surface coupled to a lower surface of the substrate and having a cooling channel formed therein along which a coolant for preventing the light source substrate from being overheated flows; and a heating module support passing through a hollow portion formed in an inner body constituting the spin chuck in a state of being coupled to a lower surface of the cooling unit, and supporting the light source substrate coupled to the cooling unit.
The control module may control whether to operate one or more of a plurality of LED channel groups constituting the light source unit, and may control the luminous intensity of the operating LED channel group.
The light source substrate and the cooling unit constituting the heating module may be made of a heat conductive material.
The lower surface of the light source substrate constituting the heating module and the upper surface of the cooling unit constituting the heating module may be coupled to each other without a separate space.
The area of the lower surface of the light source substrate may be the same as the area of the upper surface of the cooling unit.
3. Advantageous effects
According to the present invention, there is an effect of providing a substrate processing apparatus using a light source embedded in a spin chuck, in which, in adjusting the temperature of a substrate to be processed in a semiconductor process using a light source mounted on a light source substrate, the temperature of the substrate is measured by an infrared detection method, and the light emission intensity of the light source is adjusted according to the measured substrate temperature, thereby uniformly and precisely adjusting and maintaining the temperature of the entire area of the substrate so as to satisfy process conditions.
In addition, there is an effect of providing a substrate processing apparatus using a light source embedded in a spin chuck, in which the light source for heating a substrate is provided as a plurality of Light Emitting Diode (LED) channel groups arranged in concentric circles, and whether to operate the plurality of LED channel groups and the operating intensity of the plurality of LED channel groups are collectively or individually controlled, thereby accurately and rapidly adjusting the temperature of the substrate to a level corresponding to a target temperature in a semiconductor process.
Drawings
Fig. 1 is a top view of a substrate processing apparatus using a light source embedded in a spin chuck according to an embodiment of the present invention;
fig. 2 is a cross-sectional view of a substrate processing apparatus using a light source embedded in a spin chuck according to an embodiment of the present invention;
FIG. 3 is an enlarged view of portion A of FIG. 2;
fig. 4 is an assembled perspective view of a substrate processing apparatus using a light source embedded in a spin chuck according to an embodiment of the present invention;
fig. 5 is an exploded perspective view of a substrate processing apparatus using a light source embedded in a spin chuck according to an embodiment of the present invention;
fig. 6 is a view for describing an exemplary configuration in which a control module controls a light source unit constituting a heating module according to an embodiment of the present invention; and is
Fig. 7 is a view illustrating an exemplary configuration of a cooling unit coupled to a light source substrate according to an embodiment of the present invention.
Detailed Description
Since specific structural or functional descriptions of the embodiments according to the inventive concept disclosed herein are merely illustrated for the purpose of describing the embodiments according to the inventive concept, the embodiments according to the inventive concept may be embodied in various forms without being limited to the embodiments described herein.
While embodiments of the invention are susceptible to various modifications and alternative forms, specific embodiments thereof have been shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that there is no intention to limit the invention to the specific forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention.
It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly "connected" or "coupled" to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present. Other words used to describe the relationship between elements should be interpreted in a similar manner (i.e., "between.. versus" directly between.. versus, "adjacent" versus "directly adjacent," etc.).
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. Unless otherwise specified, a single form of expression is intended to include multiple elements. It will be further understood that the terms "comprises," "comprising," "includes" and/or "including," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 is a top view of a substrate processing apparatus using a light source embedded in a spin chuck according to an embodiment of the present invention, and fig. 2 is a cross-sectional view of a substrate processing apparatus using a light source embedded in a spin chuck according to an embodiment of the present invention. Fig. 3 is an enlarged view of a portion a of fig. 2, and fig. 4 is an assembled perspective view of a substrate processing apparatus using a light source embedded in a spin chuck according to an embodiment of the present invention. Fig. 5 is an exploded perspective view of a substrate processing apparatus using a light source embedded in a spin chuck according to an embodiment of the present invention. Fig. 6 is a view for describing an exemplary configuration in which the control module controls the light source unit constituting the heating module. Fig. 7 is a view illustrating an exemplary configuration of a cooling unit coupled to a light source substrate.
Referring to fig. 1 to 7, a substrate processing apparatus using a light source embedded in a spin chuck according to one embodiment of the present invention includes a spin chuck 10, a substrate support member 20, a heating module 30, a light-transmitting plate 40, a control module 50, and an infrared temperature measuring unit 60.
The spin chuck 10 is a member that rotates at a high speed by a rotational driving force provided by a driving member (not shown) while supporting a substrate W, which is subjected to a semiconductor process in a state disposed within a chamber in which the semiconductor process is performed. Although not shown in the drawings, the substrate W disposed on the spin chuck 10 may be rotated at a high speed due to the rotation of the spin chuck 10, for example, in a state in which a dispenser for spraying chemicals for performing a specific semiconductor process is disposed above the spin chuck 10 by a driving means such as a robot arm and sprays the chemicals toward an upper surface of the substrate W.
For example, as shown in fig. 5, the spin chuck 10 may include: an outer body 110 on which a substrate support 20 for supporting a substrate W is formed; and an inner body 120, the inner body 120 being recessed more downward than the outer body 110 to provide a space in which the heating module 30 is embedded and having a hollow portion H formed in a central region of the inner body 120.
The plurality of substrate supports 20 are disposed along an edge of the outer body 110 of the spin chuck 10, and are members that support a substrate W that is rotated at a high speed due to the rotation of the spin chuck 10 without being deviated from the spin chuck 10.
For example, the substrate support 20 may be formed such that the support pins 22 and the clamp pin 24 form a pair, and may be configured such that in a state in which the support pins 22 mainly support the substrate W, the clamp pin 24 is rotated by a predetermined angle to assist in supporting the substrate W. For example, the clamping pin 24 may be formed such that a protrusion is formed at a point spaced from a center point of the clamping pin. When the chucking pin 24 is rotated about the center point, the protrusion may push the side surface of the substrate W, so that the substrate W may be stably supported by the chucking pin 24. Therefore, the substrate W does not deviate from the spin chuck 10 although the substrate W is rotated at a high speed.
The heating module 30 is embedded in the spin chuck 10 without being in direct contact with the spin chuck 10. The heating module 30 is a part that uniformly heats the lower surface of the substrate W rotated at high speed by being supported by the spin chuck 20 by a luminous radiation method in a state in which the part itself is fixed to a chamber (not shown).
For example, as shown in fig. 5, 6 and 7, the heating module 30 may include a light source substrate 310, a light source unit 320, a cooling unit 330, and a heating module support 340.
The light source substrate 310 is disposed in an insertion space formed due to a height difference between the outer body 110 and the inner body 120, without being in direct contact with the inner body 120 of the spin chuck 10. The light source substrate 310 is a member on which the light source unit 320 is mounted. For example, the light source substrate 310 may be a printed circuit board.
The light source unit 320 includes a plurality of Light Emitting Diode (LED) channel groups CH1, CH2, … … and CHn arranged in a concentric circle shape from a central region to an edge region of an upper surface facing the substrate W disposed on the spin chuck 10, among two surfaces of the light source substrate 310. Here, the light source unit 320 includes a plurality of LED channel groups CH1, CH2, … …, and CHn that are independently driven according to the control of the control module 50.
The cooling unit 330 functions to prevent the light source substrate 310 from overheating.
Referring to fig. 5 and 7, an upper surface of the cooling unit 330 may be coupled to a lower surface of the light source substrate 310, and a cooling channel may be formed inside the cooling unit 330 for preventing a coolant for overheating the light source substrate 310 from flowing along the cooling channel. An inlet 334 through which the coolant is introduced and an outlet 336 through which the coolant is discharged may be formed at both ends of the cooling passage 332.
For example, the light source substrate 310 and the cooling unit 330 constituting the heating module 30 may be made of a heat conductive material.
As a specific example, at least the lower surface of the light source substrate 310, the entirety or at least the upper surface of the cooling unit 330, and the cooling channel 332 may be made of a material having excellent thermal conductivity (such as metal). The lower surface of the light source substrate 310 and the upper surface of the cooling unit 330 may be coupled to each other without a separate space, and the area of the lower surface of the light source substrate 310 may be the same as the area of the upper surface of the cooling unit 330.
According to this configuration, it is possible to increase the thermal conductivity between the light source substrate 310 and the cooling unit 330, thereby rapidly reducing the temperature of the light source substrate 310 using the coolant or the cooling gas flowing through the cooling channel 332.
The heating module support 340 is a component that supports the light source substrate 310 through a hollow portion H formed in the inner body 120 constituting the spin chuck 10 in a state where one end thereof is coupled to the lower surface of the cooling unit 330. The other end of the heating module support 340 may be coupled to a chamber (not shown) to stably fix and support the heating module 30. As described above, since the light source substrate 310 and the cooling unit 330 coupled to the light source substrate 310 are disposed in the embedding space formed due to the height difference between the outer body 110 and the inner body 120 without being in direct contact with the inner body 120 of the spin chuck 10, the heating module 30 is not moved by being supported by the heating module support 340 despite the high-speed rotation of the spin chuck 10, and the state of being coupled to the chamber is stably maintained.
The infrared temperature measuring unit 60 is mounted on an upper surface on which the light source unit 320 is mounted, among two surfaces of the light source substrate 310 constituting the heating module 30, so as to face a lower surface of the substrate W without overlapping the light source unit 320. Accordingly, the infrared temperature measuring unit 60 measures the temperature of the substrate W by an infrared detection method, and transmits the measured temperature data to the control module 50.
For example, the infrared temperature measurement unit 60 may include a plurality of infrared sensors arranged along a line connecting the center region and the edge region of the upper surface of the light source substrate 310. In fig. 1, 2, 5, and 6, although the infrared temperature measuring unit 60 is illustrated as including five sensors, i.e., a first infrared sensor 61, a second infrared sensor 62, a third infrared sensor 63, a fourth infrared sensor 64, and a fifth infrared sensor 65, this is merely an example, and the number of sensors constituting the infrared temperature measuring unit 60 may be less than five or more than five.
The light-transmissive plate 40 is coupled to the spin chuck 10, and transmits light emitted toward the substrate W by the heating module 30 embedded in the spin chuck 10, and at the same time, prevents problems that various materials including chemicals and the like within the chamber are introduced into the heating module 30 to contaminate the light source substrate 310 and the light source unit 320 constituting the heating module 30.
For example, the light-transmitting plate 40 may be a circular plate-shaped member having the same diameter as that of the spin chuck 10, and a plurality of grooves recessed inward may be formed in an edge region of the light-transmitting plate 40 so as not to overlap with the plurality of support pins 22 and clamping pins 24 formed on the outer body 110 of the spin chuck 10. Regions other than the grooves in the edge region of the light-transmitting plate 40 may be coupled to the upper surface of the outer body 110 of the spin chuck 10.
For example, quartz may be used as the material of the light-transmissive plate 40, but the material of the light-transmissive plate 40 is not limited thereto. Any material having excellent light transmittance and excellent heat resistance and corrosion resistance may be applied to the light-transmitting plate 40.
The control module 50 controls the temperature of the substrate W by controlling the amount of light emitted to the lower surface of the substrate W by the light source unit 320 constituting the heating module 30. The control module 50 compares the measured temperature of the substrate W received from the infrared temperature measuring unit 60 with a set critical temperature range, and controls the operation of the light source unit 320 constituting the heating module 30 according to the comparison result between the temperature of the substrate W measured by the infrared temperature measuring unit 60 and the critical temperature range set in the control module 50.
Various control operations of the control module 50 will be described as follows.
For example, as shown in fig. 5 and 6, the infrared temperature measuring unit 60 may include a plurality of infrared sensors arranged along a line connecting the central region and the edge region of the upper surface of the light source substrate 310. Here, the plurality of infrared sensors constituting the infrared temperature measurement unit 60 may be configured to measure the temperature of the substrate W for a plurality of sections corresponding to the arrangement positions of the plurality of infrared sensors. As described above, in fig. 1, 2, 5, and 6, although the infrared temperature measuring unit 60 is illustrated as including five sensors, i.e., the first infrared sensor 61, the second infrared sensor 62, the third infrared sensor 63, the fourth infrared sensor 64, and the fifth infrared sensor 65, this is merely an example, and the number of sensors constituting the infrared temperature measuring unit 60 may be less than five or more than five. Reference numeral T1 of fig. 6 denotes temperature data measured by the first infrared sensor 61 and transmitted to the control module 50, reference numeral T2 denotes temperature data measured by the second infrared sensor 62 and transmitted to the control module 50, reference numeral T3 denotes temperature data measured by the third infrared sensor 63 and transmitted to the control module 50, reference numeral T4 denotes temperature data measured by the fourth infrared sensor 64 and transmitted to the control module 50, and reference numeral T5 denotes temperature data measured by the fifth infrared sensor 65 and transmitted to the control module 50.
In addition, for example, a plurality of infrared sensors constituting the infrared temperature measurement unit 60 may measure the temperature of the substrate W for a plurality of sections corresponding to the arrangement positions of the plurality of infrared sensors, and may transmit the measured temperatures to the control module 50. The critical temperature ranges set in the control module 50 may include critical temperature ranges of sections set for a plurality of sections. The control module 50 may be configured to compare the measured temperatures of the zones measured by the plurality of infrared sensors constituting the infrared temperature measuring unit 60 with the critical temperature ranges of the zones, and to independently drive the plurality of LED channel groups CH1, CH2, … …, and CHn constituting the light source unit 320 according to the comparison result between the measured temperatures of the zones and the critical temperature ranges of the zones.
For example, when the measured temperature of the substrate W deviates from the critical temperature range, the control module 50 may perform control such that substrate temperature state alarm information is output.
In addition, for example, when the measured temperature of the substrate W exceeds the upper temperature limit constituting the critical temperature range, the control module 50 may perform control such that the light emission amount of the light source unit is reduced.
In addition, for example, when the measured temperature of the substrate W is less than the lower temperature limit constituting the critical temperature range, the control module 50 may perform control such that the light emission amount of the light source is increased.
For example, the control module 50 may be configured to control whether one or more of the plurality of LED channel groups CH1, CH2, … …, and CHn constituting the light source unit 320 are operated and control the light emitting intensity of the operating LED channel group.
More specifically, the light source unit 320 may include a plurality of LED channel groups CH1, CH2, … …, and CHn that are uniformly arranged in a concentric circle shape from a central region to an edge region of the upper surface of the light source substrate 310 and are driven independently of one another. Each of the LED channel groups CH1, CH2, … …, and CHn arranged in a concentric circle shape may be electrically connected to the control module 50 through a separate channel, and the control module 50 may operate all or some of the LED channel groups CH1, CH2, … …, and CHn. In addition, the control module 50 may uniformly or differently control the light emission intensities of all the LED channel groups CH1, CH2, … …, and CHn.
According to the present invention as described above in detail, there is an effect of providing a substrate processing apparatus using a light source embedded in a spin chuck, in which, in adjusting the temperature of a substrate to be processed in a semiconductor process using a light source mounted on a light source substrate, the temperature of the substrate is measured by an infrared detection method, and the light emission intensity of the light source is adjusted according to the measured substrate temperature, thereby uniformly and precisely adjusting and maintaining the temperature of the entire area of the substrate so as to satisfy process conditions.
In addition, there is an effect of providing a substrate processing apparatus using a light source embedded in a spin chuck, in which the light source for heating the substrate is provided as a plurality of LED channel groups arranged in concentric circles, and whether to operate the plurality of LED channel groups and the operating intensity of the plurality of LED channel groups are collectively or individually controlled, thereby accurately and rapidly adjusting the temperature of the substrate to a level corresponding to a target temperature in a semiconductor process.
(description of reference numerals)
10: rotary chuck
20: substrate support
22: support pin
24: clamping pin
30: heating module
40: light-transmitting plate
50: control module
60: infrared temperature measuring unit
61: first infrared sensor
62: second infrared sensor
63: third infrared sensor
64: fourth infrared sensor
65: fifth infrared sensor
110: outer body
120: inner body
310: light source substrate
320: light source unit
330: cooling unit
332: cooling channel
334: inlet port
336: an outlet
340: heating module support
CH1, CH2, … …, CHn: LED channel group
H: hollow part
W: a substrate.

Claims (14)

1. A substrate processing apparatus using a light source embedded in a spin chuck, the substrate processing apparatus comprising:
a spin chuck that rotates while supporting a substrate;
a heating module embedded in the spin chuck without contacting the spin chuck, the heating module including a light source unit configured to emit light to a lower surface of the substrate rotated by being supported by the spin chuck and a light source substrate on which the light source unit is mounted;
an infrared temperature measuring unit which is mounted on an upper surface on which the light source unit is mounted, among two surfaces of the light source substrate constituting the heating module, so as to face the lower surface of the substrate without overlapping the light source unit, and measures a temperature of the substrate by an infrared detection method;
a light-transmitting plate coupled with the spin chuck and transmitting the light emitted toward the substrate by the light source unit constituting the heating module; and
a control module which controls a temperature of the substrate by controlling an amount of the light emitted to the lower surface of the substrate by the light source unit constituting the heating module, compares a measured temperature of the substrate received from the infrared temperature measuring unit with a set critical temperature range, and controls an operation of the light source unit constituting the heating module according to a comparison result between the measured temperature of the substrate and the critical temperature range.
2. The substrate processing apparatus of claim 1, wherein the light source unit comprises a plurality of Light Emitting Diode (LED) channel groups arranged in a concentric circle shape from a central region to an edge region of the upper surface facing the substrate among the two surfaces of the light source substrate, and
the plurality of LED channel groups constituting the light source unit are driven independently of each other according to control of the control module.
3. The substrate processing apparatus of claim 2, wherein the infrared temperature measurement unit includes a plurality of infrared sensors arranged along a line connecting the center region and the edge region of the upper surface of the light source substrate, and
the plurality of infrared sensors constituting the infrared temperature measurement unit measure the temperature of the substrate for a plurality of sections corresponding to arrangement positions of the plurality of infrared sensors.
4. The substrate processing apparatus of claim 3, wherein the critical temperature range comprises critical temperature ranges of the segments provided for the plurality of segments, and
the control module compares the measured temperature of the section measured by the plurality of infrared sensors constituting the infrared temperature measurement unit with the critical temperature range of the section, and independently drives the plurality of LED channel groups constituting the light source unit according to a comparison result between the measured temperature of the section and the critical temperature range of the section.
5. The substrate processing apparatus of claim 1, wherein the control module performs control such that substrate temperature status alarm information is output when the measured temperature of the substrate deviates from the critical temperature range.
6. The substrate processing apparatus according to claim 1, wherein the control module performs control such that an amount of light emission of the light source is reduced when the measured temperature of the substrate exceeds an upper temperature limit constituting the critical temperature range.
7. The substrate processing apparatus according to claim 6, wherein the control module performs control such that the amount of light emission of the light source is increased when the measured temperature of the substrate is less than a lower temperature limit constituting the critical temperature range.
8. The substrate processing apparatus of claim 1, wherein the spin chuck comprises:
an outer body on which a substrate support configured to support the substrate is formed; and
an inner body that is recessed more downward than the outer body to provide a space in which the heating module is embedded, and has a hollow portion formed in a central region of the inner body.
9. The substrate processing apparatus of claim 8, wherein the light source substrate is disposed in an embedding space formed due to a height difference between the outer body and the inner body without being in direct contact with the inner body of the spin chuck, and
the light source unit includes a plurality of LED channel groups arranged in a concentric circle shape from a central region to an edge region facing the upper surface of the substrate among the two surfaces of the light source substrate, and driven independently of each other.
10. The substrate processing apparatus of claim 9, wherein the heating module further comprises:
a cooling unit having an upper surface coupled to the lower surface of the substrate and having a cooling channel formed therein along which a coolant for preventing the light source substrate from being overheated flows; and
a heating module support passing through a hollow portion formed in the inner body constituting the spin chuck in a state of being coupled to a lower surface of the cooling unit, and supporting the light source substrate coupled to the cooling unit.
11. The substrate processing apparatus of claim 8, wherein the control module controls whether to operate one or more of the plurality of LED channel groups constituting the light source unit and controls a luminous intensity of the LED channel group being operated.
12. The substrate processing apparatus of claim 9, wherein the light source substrate and the cooling unit constituting the heating module are made of a heat conductive material.
13. The substrate processing apparatus as claimed in claim 12, wherein a lower surface of the light source substrate constituting the heating module and an upper surface of the cooling unit constituting the heating module are combined with each other without a separate space.
14. The substrate processing apparatus of claim 13, wherein an area of the lower surface of the light source substrate is the same as an area of the upper surface of the cooling unit.
CN202110284008.5A 2020-03-23 2021-03-17 Substrate processing apparatus using light source embedded in spin chuck Pending CN113436987A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140102637A1 (en) * 2012-10-12 2014-04-17 Lam Research Ag Method and apparatus for liquid treatment of wafer shaped articles
US20170221730A1 (en) * 2014-10-10 2017-08-03 Zeus Co., Ltd. Substrate processing heater device and substrate solution processing device having same
GB201900912D0 (en) * 2019-01-23 2019-03-13 Lam Res Ag Apparatus for processing a wafer, and method of controlling such an apparatus
US20190189475A1 (en) * 2017-12-15 2019-06-20 Tokyo Electron Limited Substrate processing apparatus, substrate processing method and recording medium
US20190318946A1 (en) * 2018-04-16 2019-10-17 Semes Co., Ltd. Substrate heating unit and substrate processing apparatus having the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100523643B1 (en) 2003-02-04 2005-10-25 동부아남반도체 주식회사 Process chamber of a rapid thermal processing apparatus capable of uniformly heat transferring to a wafer loaded therein
JP5107372B2 (en) * 2010-02-04 2012-12-26 東京エレクトロン株式会社 Heat treatment apparatus, coating and developing treatment system, heat treatment method, coating and developing treatment method, and recording medium on which program for executing the heat treatment method or coating and developing treatment method is recorded
KR101125645B1 (en) * 2010-03-02 2012-03-27 (주) 예스티 Temperature control equipment of semiconductor and led wafer
US9728430B2 (en) 2015-06-29 2017-08-08 Varian Semiconductor Equipment Associates, Inc. Electrostatic chuck with LED heating
KR102208753B1 (en) * 2018-04-06 2021-01-28 세메스 주식회사 Substrate supporting unit and substrate processing apparatus using the same
KR102102202B1 (en) * 2018-11-07 2020-04-21 세메스 주식회사 Apparatus and system for treating substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140102637A1 (en) * 2012-10-12 2014-04-17 Lam Research Ag Method and apparatus for liquid treatment of wafer shaped articles
US20170221730A1 (en) * 2014-10-10 2017-08-03 Zeus Co., Ltd. Substrate processing heater device and substrate solution processing device having same
US20190189475A1 (en) * 2017-12-15 2019-06-20 Tokyo Electron Limited Substrate processing apparatus, substrate processing method and recording medium
US20190318946A1 (en) * 2018-04-16 2019-10-17 Semes Co., Ltd. Substrate heating unit and substrate processing apparatus having the same
GB201900912D0 (en) * 2019-01-23 2019-03-13 Lam Res Ag Apparatus for processing a wafer, and method of controlling such an apparatus

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