CN113172779A - High-strength scribing knife for semiconductor wafer step cutting and manufacturing method - Google Patents

High-strength scribing knife for semiconductor wafer step cutting and manufacturing method Download PDF

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CN113172779A
CN113172779A CN202110359262.7A CN202110359262A CN113172779A CN 113172779 A CN113172779 A CN 113172779A CN 202110359262 A CN202110359262 A CN 202110359262A CN 113172779 A CN113172779 A CN 113172779A
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cutting
blade
disc
edge
semiconductor wafer
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CN113172779B (en
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闫贺亮
邵俊永
王战
乔帅
董峰
窦文海
陈月涛
高鹏
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Zhengzhou Research Institute for Abrasives and Grinding Co Ltd
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Zhengzhou Research Institute for Abrasives and Grinding Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/10—Agitating of electrolytes; Moving of racks
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

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  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Polishing Bodies And Polishing Tools (AREA)

Abstract

The invention discloses a high-strength scribing knife for semiconductor wafer step cutting and a manufacturing method thereof.A thickness of a cutting edge close to a disc-shaped substrate section is larger than a thickness of a cutting edge far away from the disc-shaped substrate section, so that the defect that the root of the cutting edge is too weak due to a tip effect in an electroplating process is eliminated, the length of the cutting edge can be made longer, and the service life of the scribing knife for scribing a semiconductor wafer can be prolonged; the consistent thickness of the cutting edges is realized in principle, the limit rotating speed and the feed speed of the scribing cutter can be directly improved, and the processing efficiency can be further improved; the blade participates in cutting repeatedly, premature knife breaking easily caused by fatigue fracture of the root of the blade edge can be delayed by strengthening the root of the blade edge, blade swing in the cutting process can be reduced by strengthening the root of the blade edge, and forward breakage, back breakage and lateral breakage in the cutting process are reduced.

Description

High-strength scribing knife for semiconductor wafer step cutting and manufacturing method
Technical Field
The invention belongs to the technical field of semiconductor scribing, and particularly relates to a high-strength scribing knife for semiconductor wafer step cutting and a manufacturing method thereof.
Background
In the semiconductor industry, chips are manufactured in bulk on a silicon wafer, and such chip arrays are required to be separated one by one in subsequent processes. This separation is achieved by dicing the silicon wafer with an electroplated dicing blade along dicing streets previously reserved on the surface of the wafer on a dicing saw. During the dicing process of the dicing blade, the front surface of the wafer has a front-edge defect and the back surface of the wafer has a back-edge defect. Generally, the finer the abrasive in the edge of the saw blade, the better the positive breakup, and the coarser the abrasive, the better the back breakup. The wafer is directly cut through by a blade along the cutting path, and the forward chipping and the back chipping cannot be simultaneously considered. In particular, in recent years, the dicing streets become narrower, and the requirements for the front and back chipping become stricter. Thus, step dicing (stepcut) of the wafer occurs. Particularly, the front cutting path contains a large number of metal test points, and metal chips on the front side block the blade in the cutting process, so that the back chipping is extremely poor, and the stepped cutting is particularly suitable for the situation.
Wafer step dicing (stepcut) typically uses two blades to complete the dicing of the wafer. As shown in fig. 1, the blade 1 is grooved from the front side of the wafer, and only for the front chipping, the blade containing the abrasive material with fine grit is selected, the blade has a large blade thickness, and is usually mounted on the main shaft 1(Z1) of the dicing saw, and the wafer is grooved from the top, and the grooving depth is usually about 1/3 of the wafer thickness. The blade 2 cuts through the wafer, and does not participate in the cutting of the front material of the wafer, but only generates back chipping, so the blade containing coarse-grained abrasive is usually selected, the thickness of the blade is usually 5-10 μm thinner than that of the blade 1, and the wafer is completely cut through at the bottom of the groove.
The step cutting simultaneously uses two blades to cut the wafer, and the problems of front collapse and back collapse are respectively solved. As shown in fig. 1, since the saw blade edge for the Z2 axis is made thinner, but the depth of cut into the wafer is greater, the length of the edge that can be used for wear is much shorter than the Z1 axis, and the life of the Z2 axis blade is typically only about 10% of the life of the Z1 axis blade, coupled with the faster wear rate of Z2 due to the greater amount of material cut.
According to the distribution rule of the secondary current of electroplating,
Figure BDA0003002778780000011
the current density of the near anode point is larger than that of the far anode point, and the coating deposited by the scribing knife obtained in the same electroplating time has the result of thicker outer edge and thinner inner edge, namely the blade edge is thicker at the outer edge and thinner at the root. In this case, the length of the cutting edge can only be made smaller, which in turn leads to a limited life of the saw blade for cutting through.
The electroplating scribing knife has the advantages that in the cutting process, the cutting edge is continuously worn, and the length of the cutting edge determines the service life. The blade is too long, so that the blade is unstable in the cutting process, a snake-shaped cutting phenomenon is generated, and the cut wafer can be scrapped.
In addition, in the manufacturing process of the electroplating scribing knife, due to the tip effect, the plating layer close to the outer edge is thicker than that of the inner side, so that the manufactured scribing knife is formed, the thickness of the knife tip part is 1-3 mu m, the root part of the knife edge is thinner, and the outer edge is thicker and the inner edge is thinner, as in the traditional manufacturing methods in patent application numbers CN201610952548 and CN 200510081888. Therefore, the length of the edge of the traditional electroplating blade is 30 times of the thickness of the edge at most, the length of the edge of the scribing blade is continuously worn to keep self-sharpening during the process of scribing the wafer, and the upper limit of the edge length limits the service life of the blade for cutting through.
The invention relates to an ultrathin resin scribing knife for cutting glass wafer and a preparation method and application thereof (publication No. CN111070111A), and discloses a resin binder ultrathin cutting blade and a preparation process thereof, wherein diamond and liquid phenolic resin liquid are stirred and mixed for the first time, then are stirred and mixed with graphite powder, molybdenum disulfide, silver powder, aluminum powder, tungsten carbide and cryolite for the second time, then phenolic resin powder is added, and the mixture is stirred and mixed again and then is sieved to obtain a molding material; hot pressing the molding material to obtain a blank; after the blank is sintered, performing conventional processing to obtain an ultrathin resin scribing cutter for cutting the glass wafer; however, the cutting method is mainly applied to cutting of high-precision glass wafers, can be used in the fields of semiconductor substrates, 3D wafer level chip packaging and the like, and is free of edge breakage and burr, but the problem that the service life of a plating blade is limited cannot be solved.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a high-strength scribing knife for semiconductor wafer step cutting and a manufacturing method thereof, which can overcome the defect that the root of a blade is too weak due to a point discharge mechanism, can make the length of the blade longer and further prolong the service life of the scribing knife for scribing the semiconductor wafer.
In order to solve the technical problems, the invention adopts the technical scheme that:
a high-strength scribing knife for semiconductor wafer step cutting comprises a disc-shaped substrate and an annular composite plating layer fixedly arranged on the outer edge of the disc-shaped substrate, wherein the annular composite plating layer protrudes out of the disc-shaped substrate and is divided into a cutting edge, and the thickness of the cutting edge close to the disc-shaped substrate section is larger than that of the cutting edge far away from the disc-shaped substrate section.
The thickness of the cutting edge close to the disc-shaped substrate section is 5-10 mu m thicker than that of the cutting edge far away from the disc-shaped substrate section.
The length of the blade is 400-600 mu m.
The disc-shaped substrate is an aluminum alloy disc-shaped substrate.
The diamond abrasive material volume ratio in the annular composite coating is 10-20%.
The manufacturing method of the high-strength scribing knife for the semiconductor wafer step cutting comprises the following steps of:
working procedure of disc-shaped substrate
Precisely turning the upper surface of the base body blank by using a turning tool, and raising the turning tool by 5 microns within a range of 400-600 microns away from the outer edge to form an inclined plane with a slope of 5 microns/(400-600 microns), wherein the slope is kept within 360 degrees of the base body;
composite plating layer formation step
Assembling the processed substrate blank with two electroplating molds, blocking in the electroplating process, and forming an annular composite coating only in the range of 3-5 mm at the outer edge of the substrate blank;
adding diamond grinding materials with the particle size of 1-10 mu m into the electroplating solution, continuously stirring the electrolyte in the electroplating process, and finally forming a composite coating with the thickness of 15-55 mu m within the range of 3-5 mm on the outer edge of the substrate, wherein the diamond grinding materials in the composite coating are uniformly distributed;
grinding process of composite coating
Placing the electroplated substrate into a loose pulley of a single-side grinding and polishing machine, grinding the end face with the composite coating against a grinding disc, removing the upwarping part of the composite coating to achieve the top leveling effect, and forming a coating with a flat top, wherein the thickness of the coating at the edge of the most part is 10-50 microns;
disk-like substrate etching step
And (3) corroding the base body at the lower part of the composite coating by using a sodium hydroxide solution to enable the composite coating to be exposed to 400-600 microns at the edge of the disc-shaped base body to form a blade.
The substrate blank adopts an aluminum substrate, and the electroplating solution is an electrolyte containing nickel ions.
The granularity of the grinding disc in the step (3) is 2000-4000.
The invention has the beneficial effects that:
(1) according to the high-strength scribing knife for semiconductor wafer step cutting and the manufacturing method, the thickness of the cutting edge close to the disc-shaped substrate section, namely the root of the cutting edge, is larger than the thickness of the cutting edge far away from the disc-shaped substrate section, namely the blade tip, so that the defect that the root of the cutting edge is too weak due to a point discharge mechanism is overcome, the length of the cutting edge is longer, and the service life of the scribing knife for scribing the semiconductor wafer is prolonged; the consistent thickness of the cutting edges is realized in principle, the limit rotating speed and the feed speed of the scribing cutter can be directly improved, and the processing efficiency can be further improved; the blade repeatedly participates in cutting, premature cutter breaking is easily caused by fatigue fracture of the root of the blade, and the strengthening of the root of the blade can delay the occurrence of cutter breaking; the strengthening of the root of the cutting edge can reduce the swing of the cutting edge in the cutting process and reduce the forward collapse, the back collapse and the lateral fracture in the cutting process;
(2) the phenomenon that the blade is thick outside and thin inside is eliminated, even a scribing blade with the blade root larger than the thickness of the blade tip by a specific value can be customized, and the strengthening of the blade root is realized; an important performance index of the scribing cutter is the width of a slit, the thickness of a part of a blade at the blade tip determines the width of the slit, in the cutting mode of step cutting, a Z2 shaft is arranged to cut off a blade of a wafer, the root part of the blade does not participate in cutting, the part of the blade is thicker, the slit is not obviously increased, and the strength of the blade can be directly improved;
(3) when the high-strength electroplating scribing knife designed by the invention is used as a cutting knife in wafer step cutting, under the condition of the same seam width (the same knife tip part thickness), compared with the traditional scribing knife, the thickness of the root part of the knife edge of the high-strength electroplating scribing knife designed by the invention is about 5 mu m thick, so that the knife edge can be made longer, about 150 mu m can be increased, and snake-shaped cutting abnormity can not be caused; in the most common step cutting process, the thickness of a scribing knife for cutting (installed on a Z2 shaft) is 20 mu m, the length of a blade edge is 500 mu m, wherein the length of the blade edge used for loss in the cutting process does not exceed 200 mu m, and the high-strength blade designed by the invention can increase the length of the wearable blade edge with 150 mu m and can improve the service life by about 75 percent.
Drawings
FIG. 1 is a schematic diagram of a prior art grooving process;
FIG. 2 is a schematic view of the grooving process of the present invention;
FIG. 3 is a comparison of the cutting process of the present invention with that of the prior art;
FIG. 4 is a schematic view of the structure of a high strength electroplated dicing blade of the present invention;
FIG. 5 is a schematic view showing the mounting structure of the plating die in the composite plating layer forming process;
FIG. 6 is a schematic view of the composite coating before grinding;
FIG. 7 is a schematic representation of the composite coating after grinding;
wherein, fig. 3a) is a schematic diagram of cutting in the prior art, and fig. 3b) is a schematic diagram of cutting in the present invention.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
Please refer to fig. 1. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the conditions under which the present invention can be implemented, so that the present invention has no technical significance, and any structural modification, ratio relationship change, or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention. In addition, the terms "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for clarity of description, and are not intended to limit the scope of the present invention, and the relative relationship between the terms and the terms is not to be construed as a scope of the present invention.
The invention provides a high-strength scribing knife for semiconductor wafer step cutting and a manufacturing method thereof, as shown in figures 1 to 7.
An embodiment of the present invention will be described with reference to fig. 1 to 7; the high-strength electroplating scribing knife provided by the invention comprises an aluminum alloy substrate 11 and a composite coating 22, wherein the composite coating 22 consists of electroplated nickel and diamond abrasives, the diamond abrasives are uniformly distributed in the composite coating, and the particle size of the diamond is 1-10 microns. In order to have better back collapse prevention performance, the volume proportion of the diamond abrasive in the composite coating is 10-20%. The exposed part of the composite plating layer 22 extending out of the aluminum alloy substrate 11 is called a blade, which forms the working part of the scribing blade, the thickness of the blade is usually 10-50 μm, and the length of the blade is usually 400-600 μm. The scribing knife provided by the invention realizes the strengthening at the root of the blade, and the specific realization mode is that the part of the blade close to the aluminum matrix is thicker than the part far away from the aluminum matrix. Preferably, the blade has a length of 400 to 600 μm and the root of the blade is thicker than the tip by about 5 μm.
The manufacturing method of the high-strength scribing knife for the semiconductor wafer step cutting comprises the following steps:
the machining process of the aluminum alloy disc-shaped substrate 11 comprises the following steps:
an annular boss is arranged on the upper surface of the aluminum substrate close to the edge, and the upper surface of the aluminum substrate rises by 5 microns within the range of 400-600 microns from the outer edge to form an inclined surface. The method specifically comprises the following steps: performing precision turning on the upper surface of the aluminum substrate blank by using a diamond turning tool, wherein the turning tool is raised by about 5 μm within a range of 400-600 μm from the outer edge to form a slope of 5 μm/(400-600 μm), and the slope is maintained within 360 DEG of the aluminum substrate, as shown in FIG. 5, a cross-sectional view of the aluminum substrate shows, and the upper surface of the aluminum substrate is raised by 5 μm within a range of 400-600 μm from the outer edge to form a slope.
Composite plating layer 22 formation step:
forming a composite coating with the thickness of 15-55 mu m within the range of 3-5 mm on the outer edge of the aluminum substrate, wherein the composite coating contains uniformly distributed diamond abrasive materials. As shown in FIG. 5, the processed aluminum base 11, the electroplating mold 4 and the electroplating mold 5 are assembled, the two molds are used for blocking in the electroplating process, and the annular composite plating layer 22 is formed only in the range of 3-5 mm of the outer edge of the base body. The electroplating solution can be an electrolyte containing nickel ions, such as nickel sulfate or nickel sulfamate, a certain weight of diamond abrasive with the particle size of 1-10 mu m is mixed into the electrolyte, and the proportion of diamond in the composite plating layer 22 formed after electroplating is determined by the added weight. The electroplating solution is continuously stirred in the electroplating process, so that the uniform distribution of the diamond abrasive in the electroplating solution is ensured, and the uniform distribution of the abrasive in the electroplating composite coating 22 is further ensured. The plating time determines the thickness of the composite plating layer 22, and in this embodiment, the thickness of the composite plating layer 22 is preferably 15 to 55 μm.
Grinding the composite plating layer 22:
as shown in FIG. 6, the step part of the composite plating layer is removed at the top to form a plating layer with a flat top, and the thickness of the edge-most plating layer is 10-50 μm. Placing the electroplated aluminum substrate into a loose pulley of a single-side grinding and polishing machine, grinding the end face with the composite coating against a grinding disc 7, and removing the upwarping part of the composite coating to achieve the top leveling effect; the grinding disk 7 can be a 2000-4000 grit grinding disk.
A blade exposing process:
and corroding a part of the lower aluminum matrix of the composite plating layer with a high-concentration sodium hydroxide solution to expose 400-600 microns of the composite plating layer at the edge of the aluminum matrix to form a blade. The mechanism for doing so is: the high-concentration sodium hydroxide solution can corrode aluminum but cannot corrode the composite coating consisting of the electroplated nickel and the diamond abrasive, and the corrosion time determines the exposed length of the composite coating, namely the length of the blade.
When the dicing blade manufactured as described above is used as a cutting blade in wafer step cutting, as shown in fig. 3, under the same slit width requirement, the thickness of the root of the blade is about 5 μm thicker than that of the conventional dicing blade, so that the blade can be made longer, and can be increased by about 150 μm, as shown in the "L" length part in fig. 3; in the most commonly used step cutting process, the thickness of the cutting (Z2 axis mounted) scribing blade is 20 μm, the blade length is 500 μm, the safety margin is deducted by 50 μm, the blade loss is 20 μm, the wafer thickness is 200 μm, the depth of cut film is 30 μm, and the blade length used for loss in the rest cutting process is usually not more than 200 μm. The high-strength blade designed by the invention can increase the length of the wearable blade edge with the diameter of 150 mu m and prolong the service life by about 75 percent.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are given by way of illustration of the principles of the present invention, and that various changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims. The scope of the invention is defined by the appended claims and equivalents.
In the description of the present invention, it is to be understood that the terms "front", "rear", "left", "right", "center", etc., indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the scope of the present invention.

Claims (8)

1. A high-strength scribing knife for semiconductor wafer step cutting is characterized in that: the annular composite plating layer protrudes out of the disc-shaped base body part and is a cutting edge, and the thickness of the cutting edge close to the disc-shaped base body section is larger than that of the cutting edge far away from the disc-shaped base body section.
2. The high-strength scribing bit for semiconductor wafer step cutting as claimed in claim 1, wherein: the thickness of the cutting edge close to the disc-shaped substrate section is 5-10 mu m thicker than that of the cutting edge far away from the disc-shaped substrate section.
3. The high-strength scribing bit for semiconductor wafer step cutting as claimed in claim 1, wherein: the length of the blade is 400-600 mu m.
4. The high-strength scribing bit for semiconductor wafer step cutting as claimed in claim 1, wherein: the disc-shaped substrate is an aluminum alloy disc-shaped substrate.
5. The high-strength scribing bit for semiconductor wafer step cutting as claimed in claim 1, wherein: the diamond abrasive material volume ratio in the annular composite coating is 10-20%.
6. The method for manufacturing the high-strength scribing bit for the step cutting of the semiconductor wafer according to any one of claims 1 to 5, comprising the following steps:
(1) working procedure of disc-shaped substrate
Precisely turning the upper surface of the base body blank by using a turning tool, and raising the turning tool by 5 microns within a range of 400-600 microns away from the outer edge to form an inclined plane with a slope of 5 microns/(400-600 microns), wherein the slope is kept within 360 degrees of the base body;
(2) composite plating layer formation step
Assembling the processed substrate blank with two electroplating molds, blocking in the electroplating process, and forming an annular composite coating only in the range of 3-5 mm at the outer edge of the substrate blank;
adding diamond grinding materials with the particle size of 1-10 mu m into the electroplating solution, continuously stirring the electrolyte in the electroplating process, and finally forming a composite coating with the thickness of 15-55 mu m within the range of 3-5 mm on the outer edge of the substrate, wherein the diamond grinding materials in the composite coating are uniformly distributed;
(3) grinding process of composite coating
Placing the electroplated substrate into a loose pulley of a single-side grinding and polishing machine, grinding the end face with the composite coating against a grinding disc, removing the upwarping part of the composite coating to achieve the top leveling effect, and forming a coating with a flat top, wherein the thickness of the coating at the edge of the most part is 10-50 microns;
(4) disk-like substrate etching step
And (3) corroding the base body at the lower part of the composite coating by using a sodium hydroxide solution to enable the composite coating to be exposed to 400-600 microns at the edge of the disc-shaped base body to form a blade.
7. The high-strength scribing bit for semiconductor wafer step cutting and the manufacturing method thereof as claimed in claim 6, wherein: the substrate blank adopts an aluminum substrate, and the electroplating solution is an electrolyte containing nickel ions.
8. The high-strength scribing bit for semiconductor wafer step cutting and the manufacturing method thereof as claimed in claim 6, wherein: the granularity of the grinding disc in the step (3) is 2000-4000.
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CN114672860B (en) * 2022-03-03 2024-04-12 郑州磨料磨具磨削研究所有限公司 Manufacturing method of electroplated ultrathin abrasive cutting wheel without protrusions on surface

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