CN113169050A - Laser annealing method and method for manufacturing thin film transistor - Google Patents

Laser annealing method and method for manufacturing thin film transistor Download PDF

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Publication number
CN113169050A
CN113169050A CN201980076602.6A CN201980076602A CN113169050A CN 113169050 A CN113169050 A CN 113169050A CN 201980076602 A CN201980076602 A CN 201980076602A CN 113169050 A CN113169050 A CN 113169050A
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silicon film
region
laser
amorphous silicon
irradiation
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水村通伸
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V Technology Co Ltd
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02518—Deposited layers
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02587—Structure
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    • H01L21/02518—Deposited layers
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

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Abstract

Provided is a laser annealing method for modifying a region to be modified of an amorphous silicon film into a crystallized silicon film by irradiating the region to be modified with laser light, the laser annealing method including: a first irradiation step of irradiating the amorphous silicon film outside the planned modification region with a first laser beam for forming a seed region made of microcrystalline silicon; and a second irradiation step of irradiating the surface of the amorphous silicon film with a second laser beam so as to grow crystals such that the amorphous silicon film in the region to be modified becomes the crystallized silicon film, with the seed region as a starting point.

Description

Laser annealing method and method for manufacturing thin film transistor
Technical Field
The present invention relates to a laser annealing method and a method for manufacturing a thin film transistor.
Background
A Thin Film Transistor (TFT) is used as a switching element for actively driving a Thin Display (FPD) such as a Liquid Crystal Display (LCD) and an Organic EL Display (OLED). As a material of a semiconductor layer of a thin film transistor (hereinafter, referred to as a TFT), amorphous Silicon (a-Si: amorphous Silicon), polycrystalline Silicon (p-Si: polycrystalline Silicon), or the like is used.
Amorphous silicon has a low mobility (μ), which is an index of the ease of movement of electrons. Therefore, it is impossible to fully cope with the high mobility required for the FPD with further high density and high definition using amorphous silicon. Therefore, as a switching element in the FPD, it is preferable to form a channel semiconductor layer from polycrystalline silicon having a mobility much higher than that of amorphous silicon. As a method for forming a polysilicon film, a method is known in which an amorphous silicon film is irradiated with Laser light by an Excimer Laser Annealing (ELA) apparatus using an Excimer Laser to recrystallize the amorphous silicon and form polysilicon.
As a conventional laser annealing method, the following techniques are known: with respect to an amorphous silicon film formed over the entire surface of a substrate, only a TFT formation region (channel semiconductor layer region) is subjected to excimer laser annealing using laser pulsed light to locally form a polysilicon film (see, for example, patent document 1). In this method, the arrangement of the microlenses is set so that the beam spot of the laser pulse light can be irradiated to the entire TFT formation region.
Prior art documents
Patent document
Patent document 1: japanese patent laid-open publication No. 2010-283073
Disclosure of Invention
Problems to be solved by the invention
However, the crystal grain size of polycrystalline silicon formed by pulsed light irradiation of excimer laser light is on the order of several tens to several hundreds nm. With such a degree of crystal particle diameter, a higher degree of mobility cannot be satisfied. A high degree of mobility is now required for the channel semiconductor layer region of the TFT of the driver circuit that turns on/off the pixel transistor in the FPD. Further, in the FPD, along with the increase in size, the increase in resolution, and the increase in speed of moving image characteristics, the TFT, which is a switching element of a pixel, is also expected to have a higher mobility.
The present invention has been made in view of the above-described problems, and an object thereof is to provide a laser annealing method capable of selectively forming a polysilicon film, a quasi-single crystal silicon film, or the like having a high mobility in a necessary region. Another object of the present invention is to provide a method for manufacturing a high-performance thin film transistor having high mobility.
Means for solving the problems
In order to solve the above-described problems and achieve the object, an aspect of the present invention relates to a laser annealing method for irradiating a region to be reformed of an amorphous silicon film with laser light to reform the region to be reformed into a crystallized silicon film, the laser annealing method including: a first irradiation step of irradiating the amorphous silicon film outside the planned modification region with a first laser beam for forming a seed region made of microcrystalline silicon; and a second irradiation step of irradiating the surface of the amorphous silicon film with a second laser beam so as to grow crystals such that the amorphous silicon film in the region to be modified becomes the crystallized silicon film, with the seed region as a starting point.
In the above aspect, it is preferable that the amorphous silicon film is formed on a substrate having a gate wiring formed on a surface thereof with a gate insulating film interposed therebetween, the planned modification region is a region set on the amorphous silicon film in a region overlapping with the gate wiring, the planned modification region is a region to be a channel semiconductor layer of a thin film transistor, and the seed region is disposed outside in a direction orthogonal to a longitudinal direction of the gate wiring.
In the above aspect, it is preferable that the irradiation energy in the first laser light irradiation in the first irradiation step is set to a condition that the amorphous silicon film is microcrystallized as a seed crystal, and the second laser light irradiation in the second irradiation step is performed by using a continuous oscillation laser light.
In the above aspect, it is preferable that the first laser beam is irradiated by on-off modulation of the continuous oscillation laser beam used in the second irradiation step.
In the above aspect, it is preferable that the first irradiation step and the second irradiation step are performed using a spatial light modulator that selectively reflects laser light and selectively irradiates the laser beam into the planned modification region.
In the above aspect, it is preferable that the spatial light modulator is configured such that a plurality of micromirrors are arranged in a matrix, and the spatial light modulator is selectively driven so that the micromirrors can be individually switched between an irradiation state and a non-irradiation state in which the laser beam is irradiated onto the surface of the amorphous silicon film.
In the above aspect, it is preferable that in the first irradiation step, a plurality of laser pulse beams are irradiated to the outside of the planned modification region by using a microlens array in which a plurality of microlenses are arranged in a matrix, and in the second irradiation step, a plurality of laser beams of a continuous oscillation laser are irradiated to the planned modification region by using the microlens array.
As described above, the crystallized silicon film is preferably selected from a polycrystalline silicon film and a quasi-monocrystalline silicon film.
Another aspect of the present invention relates to a method for manufacturing a thin film transistor, including: a first irradiation step of irradiating a portion of a gate substrate, in which a gate wiring, a gate insulating film, and an amorphous silicon film are formed in this order on a substrate, with a first laser beam to form a seed region made of microcrystalline silicon, the portion being set outside a region to be modified of the amorphous silicon film to be a channel semiconductor layer and being located outside the gate wiring in a direction orthogonal to a longitudinal direction of the gate wiring; a second irradiation step of irradiating the surface of the amorphous silicon film with a second laser beam so as to grow crystals such that the amorphous silicon film in the region to be modified becomes a crystallized silicon film, with the seed region as a starting point; forming a metal film over the entire surface of the amorphous silicon film subjected to the second irradiation step; forming a mask for etching in a region to be a source wiring and a drain wiring on the metal film; and etching using the etching mask to remove the metal film exposed without being covered by the etching mask and the amorphous silicon film including the seed region exposed after the etching of the metal film.
In the above aspect, it is preferable that the irradiation energy in the first laser light irradiation in the first irradiation step is set to a condition that the amorphous silicon film is microcrystallized as a seed crystal, and the second laser light irradiation in the second irradiation step is performed by using a continuous oscillation laser light.
In the above aspect, it is preferable that the continuous oscillation laser used in the second irradiation step is on-off modulated to irradiate the first laser.
In the above aspect, it is preferable that the first irradiation step and the second irradiation step are performed using a spatial light modulator that selectively reflects laser light and selectively irradiates the laser beam into the planned modification region.
In the above aspect, it is preferable that the spatial light modulator is configured such that a plurality of micromirrors are arranged in a matrix, and the spatial light modulator is selectively driven so that the micromirrors can be individually switched between an irradiation state and a non-irradiation state in which the laser beam is irradiated onto the surface of the amorphous silicon film.
In the above aspect, it is preferable that in the first irradiation step, a plurality of laser modulated light beams are irradiated to the outside of the planned modification region using a microlens array in which a plurality of microlenses are arranged in a matrix, and in the second irradiation step, a plurality of laser beams of the continuously oscillating laser are irradiated to the planned modification region using the microlens array.
As described above, the crystallized silicon film is preferably selected from a polycrystalline silicon film and a quasi-monocrystalline silicon film.
Effects of the invention
According to the laser annealing method of the present invention, a polycrystalline silicon film or a quasi-monocrystalline silicon film having a high mobility can be selectively formed in a necessary region, and a high-performance TFT can be realized. According to the method for manufacturing a thin film transistor of the present invention, a high-performance TFT can be manufactured with a small number of steps.
Drawings
Fig. 1 is a flowchart showing a laser annealing method according to a first embodiment of the present invention.
Fig. 2 is a schematic configuration diagram of a laser annealing apparatus used in the laser annealing method according to the first embodiment of the present invention.
Fig. 3 is an explanatory diagram schematically showing an example of arrangement of micromirrors in the laser annealing apparatus used in the laser annealing method according to the first embodiment of the present invention.
Fig. 4 is a correspondence relationship between regions where a crystal structure formed when the amorphous silicon film is irradiated with the laser light is established, from the viewpoint of a power density condition of the irradiated laser light and a scanning speed condition on the amorphous silicon film (target substrate) side.
Fig. 5 is an explanatory view showing a first irradiation step for forming a seed crystal region in the laser annealing method according to the embodiment of the present invention.
Fig. 6 is an explanatory view showing a state in which the second irradiation step of performing the second irradiation with the seed crystal region formed in the first irradiation step as a starting point in the laser annealing method according to the embodiment of the present invention is started.
Fig. 7 is an explanatory view showing a state where all regions to be modified are modified into a single crystalline silicon-like film by the second irradiation step in the laser annealing method according to the embodiment of the present invention.
Fig. 8-1 is a plan view showing a process of forming a glass substrate (gate substrate) on which gate wiring is formed, which is used in the laser annealing method according to the embodiment of the present invention.
Fig. 8-2 is a plan view showing a process of forming a glass substrate (gate substrate) having an amorphous silicon film formed over the entire surface in the laser annealing method according to the embodiment of the present invention.
Fig. 8-3 is a plan view showing a planned reformed region in a glass substrate (gate substrate) on which an amorphous silicon film is formed over the entire surface in the laser annealing method according to the embodiment of the present invention.
Fig. 8-4 is a process plan view showing a state where the first irradiation process is performed in the laser annealing method according to the embodiment of the present invention.
Fig. 8 to 5 are process plan views showing a state where the second irradiation process is performed in the laser annealing method according to the embodiment of the present invention.
Fig. 8 to 6 are process plan views showing a state where a metal film is deposited on the entire substrate after the second irradiation process in the laser annealing method according to the embodiment of the present invention.
Fig. 8 to 7 are process plan views showing a state where the source/drain electrodes are formed by patterning the metal film in the laser annealing method according to the embodiment of the present invention.
Fig. 9 is a sectional view taken along line a-B in fig. 8-7.
Fig. 10 is an explanatory diagram showing an imaging optical system in the MLA laser annealing apparatus used in the laser annealing method according to the embodiment of the present invention.
Fig. 11 is an explanatory diagram showing an imaging optical system in the MLA laser annealing apparatus used in the laser annealing method according to the embodiment of the present invention.
Detailed Description
Hereinafter, a laser annealing method and a method for manufacturing a thin film transistor according to an embodiment of the present invention will be described in detail with reference to the drawings. It should be noted that the drawings are schematic, and the number of the respective members, the size of the respective members, the ratio of the sizes, the shapes, and the like are different from those in reality. In addition, the drawings also include portions different in dimensional relationship, ratio, or shape from each other.
The laser annealing method of the present invention is used when a region to be reformed of an amorphous silicon film is reformed into a crystalline silicon film by irradiating the region to be reformed with laser light. The laser annealing method comprises the following steps: a first irradiation step of irradiating the amorphous silicon film outside the region to be modified with a first laser beam for forming a seed region made of microcrystalline silicon; and a second irradiation step of irradiating the surface of the amorphous silicon film with a second laser beam from the seed region as a starting point to grow crystals so that the amorphous silicon film in the region to be modified becomes a crystallized silicon film.
[ embodiment ]
Before the description of the laser annealing method, an example of a target substrate to be annealed by the laser annealing method and a laser annealing apparatus 10 used in the laser annealing method will be described.
(substrate to be processed)
As shown in fig. 2, the target substrate 1 includes a glass substrate 2, a plurality of gate lines 3 arranged on a surface of the glass substrate 2, a gate insulating film 4 formed on the glass substrate 2 and the gate lines 3, and an amorphous silicon film 5 deposited on the entire surface of the gate insulating film 4. The target substrate 1 is also referred to as a gate substrate. The target substrate 1 is finally a Thin Film Transistor (TFT) substrate in which TFTs and the like are fabricated.
In the present embodiment, the substrate 1 to be processed is transported in a direction orthogonal to the longitudinal direction of the gate wiring 3 in the laser annealing process. That is, the longitudinal direction of the gate line 3 is a direction perpendicular to the transport direction T as shown in fig. 5 to 7. The gate wiring 3 shown in fig. 2 is shown in a state of being cut along the longitudinal direction. Although one gate wiring 3 is illustrated in fig. 5 to 7, a plurality of gate wirings 3 are arranged in parallel with each other on the glass substrate 2. A plurality of alignment marks, not shown, are provided at predetermined positions on the target substrate 1.
As shown in fig. 5 to 7, a rectangular modification-planned region 6 is provided on the amorphous silicon film 5 formed above the gate line 3. The modification intended region 6 eventually becomes a channel semiconductor layer region of the TFT. The modification planned region 6 is set in plural number in accordance with the number of TFTs formed along the longitudinal direction of the gate wiring 3. In the present embodiment, the width W (see fig. 5) of the planned modification region 6 is set to be substantially the same as the width of the gate line 3.
(brief Structure of laser annealing apparatus)
Hereinafter, a schematic configuration of the laser annealing apparatus 10 according to the present embodiment will be described with reference to fig. 2 to 4. As shown in fig. 2, the laser annealing apparatus 10 includes a base 11, a laser light source unit 12, a laser beam irradiation unit 13, and a control unit 14.
In the present embodiment, the substrate 1 to be processed is moved without moving the laser beam irradiation unit 13 during the annealing process. The base 11 includes a substrate conveyance mechanism not shown. In the laser annealing apparatus 10, the substrate 1 to be processed is conveyed in the conveying direction (scanning direction) T by a substrate conveying mechanism (not shown) while being placed on the base 11.
As shown in fig. 5 to 7, the transport direction T is a direction orthogonal to the longitudinal direction of the gate line 3.
As shown in fig. 2, the laser light source unit 12 includes: a CW laser source 15 as a light source that oscillates continuous wave laser light (CW laser light); an ON-OFF (ON-OFF) signal generator 16 that performs ON-OFF (ON-OFF) modulation ON the CW laser light to form CW laser modulated light as first laser light; and a light emitting unit 17 for emitting the continuous oscillation laser light or the CW laser modulated light toward the laser beam irradiation unit 13. The laser light source unit 12 is set to be capable of emitting two types of laser light, that is, a CW laser light as a second laser light and a CW laser light modulated light as a first laser light that is on/off modulated with a CW laser light emitted from the CW laser light source 15.
In the laser light source section 12, a laser beam LB is emitted from the light emitting section 17 toward a digital micromirror device 18 side described later in the laser beam irradiation section 13.
As the CW laser light source 15, various lasers such as a semiconductor laser, a solid laser, a liquid laser, and a gas laser can be used.
The laser beam irradiation unit 13 is disposed above the base 11 via a support frame or the like, not shown. The laser beam irradiation section 13 includes a Digital micromirror Device (DMD: registered trademark of Texas Instruments) 18 as a spatial light modulator, a baffle (absorber) 19, a microlens array 20, and a projection lens 21.
As shown in fig. 2 and 3, the digital micromirror device (hereinafter referred to as DMD)18 includes a driver substrate (CMOS substrate) 22 and a plurality of micromirrors (thin film mirrors) 23(23A to 23F: six symbols are attached to several columns a to F). In the present embodiment, for convenience of explanation, the number of micromirrors 23 is set to 36, but the actual number is equal to or greater than the number of pixels of a high-definition television. The micromirror 23 is formed in a square shape with a side length of about ten μm. A plurality of pixel regions are arranged in a matrix on the drive substrate 22, and a CMOS SRAM cell is formed in each pixel region.
The micromirrors 23 are arranged on the drive substrate 22 so as to correspond to the respective CMOS SRAM cells. The micromirrors 23 are provided by mems (micro Electro Mechanical systems) technology. Each micromirror 23 is provided to be movable to two positions. Specifically, the substrate can be rotationally moved to two positions at an angle of, for example, +10 degrees and-10 degrees with respect to the substrate surface. The micromirror 23 is driven so as to be displaced to the two positions in accordance with the output data from the CMOS SRAM cell side.
As shown in fig. 3, the laser beam LB is incident on the plurality of micromirrors 23 arranged in an array from the laser light source unit 12 side at once. Each of the micromirrors 23(23A to 23F) is set to selectively move to the above-described two positions to reflect a part of the laser beam LB in two directions.
One of the two directions is a direction in which the laser light of a part of the laser beam LB is directed toward the shutter 19, and the other of the two directions is a direction in which the laser light of a part of the laser beam LB is directed toward the surface of the substrate 1 to be processed.
In fig. 2, laser light reflected from each micromirror (23a1, 23a2, 23A3, 23a4, 23a5, 23a6) in a predetermined column of the DMD18 is schematically shown by six laser beams LBd1, LBd2, LBd3, LBd4, LBd5, LBd 6. In the present embodiment, the columns including the micromirrors 23a1, 23a2, 23A3, 23a4, 23a5, and 23a6 are used, but other columns of the micromirrors 23 may be used.
The shutter 19 is disposed at a position to receive the laser light reflected by the micromirror 23 in the off state when the micromirror 23 is in the off state (for example, a state in which the angle with respect to the drive substrate 22 is-10 degrees, a non-irradiation state).
The microlens array 20 focuses the laser beams LBd (LBd1 to LBd6, etc.) reflected by the micromirrors 23 in an on state (e.g., a state of an angle of +10 degrees with respect to the driving substrate 22, an irradiation state) toward the projection lens 21, and the projection lens 21 is set to image the introduced laser beams LBd (LBd1 to LBd6, etc.) on the surface of the substrate 1 to be processed.
The control unit 14 controls a substrate conveyance mechanism, a laser light source unit 12, and a DMD18, which are not shown, provided on the base 11. Specifically, the control unit 14 is configured to drive and control a substrate transport mechanism, not shown, so as to move the target substrate 1 in the transport direction T at a predetermined speed. The control unit 14 is set so that position information of the planned modification region 6 (see fig. 5 to 7) in the target substrate 1 is input from a position detection mechanism (not shown). The position detection mechanism detects an alignment mark, not shown, provided on the target substrate 1 and outputs a detection signal thereof to the control unit 14.
The control unit 14 is configured to perform the first irradiation and the second irradiation on the target substrate 1 by controlling the driving of the laser light source unit 12 and the laser beam irradiation unit 13.
During the first irradiation, the control unit 14 causes the laser light source unit 12 to emit laser light as the first laser light. In the present embodiment, the output of the laser beam is set to a relatively low energy.
During the second irradiation, the control unit 14 continuously emits the CW laser light as the second laser light from the laser light source unit 12. In the present embodiment, the output of the CW laser is set to be relatively high. When the first irradiation and the second irradiation are not performed, the laser light source section 12 is set to an off state or all the micromirrors 23(23A to 23F) in the DMD18 are set to an off state in which the laser beam LB is reflected toward the shutter 19.
The control unit 14 is configured to output a drive signal to the DMD18 when the planned modification area 6 reaches a predetermined position with respect to the base 11 based on the position information data of the planned modification area 6. The DMD18 to which the drive signal is input is controlled so as to turn on the micromirrors 23 in a predetermined column (for example, 23a1, 23a2, 23A3, 23a4, 23a5, and 23a 6).
When the micromirrors 23 are turned on, the laser beam LB of the laser beam emitted from the laser light source unit 12 is reflected by the micromirrors 23(23a1, 23a2, 23A3, 23a4, 23a5, 23a6) and is incident on the surface of the substrate 1.
As shown in fig. 5, the laser beams LBd1, LBd2, LBd3, LBd4, LBd5, LBd6 reflected from the micromirrors 23 project beam spots (first irradiation) to positions laterally located outside the planned modification region 6 (outside the peripheral edge portion) of the gate wiring 3. By performing the first irradiation on the amorphous silicon film 5, seed regions 5a1, 5a2, 5A3, 5a4, 5a5, 5a6, and the like can be formed at predetermined positions of the planned modification region 6 as shown in fig. 5. In the present embodiment, in order to form the seed regions 5a1, 5a2, 5A3, 5a4, 5a5, 5a6, etc., conditions are set such that the energy and the scanning speed of the substrate 1 to be processed are set to be conditions under which microcrystallization occurs.
The control unit 14 is configured to perform drive control of the laser light source unit 12 and the laser beam irradiation unit 13 based on the position information so as to perform the second irradiation of the planned modification region 6. Specifically, the beam spot of the CW laser light as the second laser light is projected onto the surface of the amorphous silicon film 5 located on the side of the planned modification region 6 from the seed regions 5a1, 5a2, 5A3, 5a4, 5a5, 5a6, and the like described above. Thereafter, the trajectory of the beam point is set so as to move within the planned modification region 6. A method of shifting the beam spot of the CW laser beam so as to encompass the planned modification region 6 by the second irradiation will be described below with reference to a laser annealing method.
The conditions are set so that the amorphous silicon film 5 in the planned modification region 6 becomes a pseudo-single crystal (hereinafter, also referred to as a lateral crystallization) silicon film 5B as a crystallized silicon film by the second irradiation. In the second irradiation, the control unit 14 controls the on/OFF signal generator 16 to be turned OFF, and the CW laser light oscillated from the CW laser light source 15 is continuously irradiated directly from the light emitting unit 17.
Fig. 4 is a correspondence relationship (map) of a region showing a condition that a crystal structure formed when the amorphous silicon film 5 is irradiated with the laser light is satisfied from the viewpoint of a power density condition of the irradiated laser light and a scanning speed condition on the amorphous silicon film (target substrate) side. The laser annealing apparatus 10 of the present embodiment includes a storage unit, not shown, that stores the correspondence relationship of the contents shown in fig. 4. The control unit 14 performs the first irradiation and the second irradiation with reference to the correspondence relationship as needed.
Specifically, the control unit 14 performs control so that the scanning speed of the substrate 1 to be processed and the power density of the laser light PL (see fig. 5) emitted from the laser light source unit 12 are set to satisfy the condition of the microcrystalline region in the correspondence relationship shown in fig. 4 when the first irradiation is performed. The control unit 14 performs control so that the scanning speed of the substrate 1 to be processed and the power density of the CW laser light CWL (see fig. 6) emitted from the laser light source unit 12 at the time of the second irradiation satisfy the condition of the lateral solidification (single crystal-like) region in the correspondence relationship shown in fig. 4.
The substrate 1 to be processed and the laser annealing apparatus 10 used in the laser annealing method according to the present embodiment are explained above, and the laser annealing method and the method for manufacturing a thin film transistor using the above-mentioned members are explained below.
(laser annealing method and method for manufacturing thin film transistor)
The laser annealing method and the method for manufacturing a thin film transistor according to the present embodiment will be described below with reference to the flowchart of fig. 1. The laser annealing method according to the present embodiment is described including a method for manufacturing a thin film transistor. The laser annealing method of the present embodiment includes a first irradiation step (step 4) and a second irradiation step (step 5) (see fig. 1) to be described below.
First, as shown in the process plan view of fig. 8-1, a plurality of gate wirings 3 are formed in parallel on a glass substrate 2. Thereafter, as shown in fig. 2 and 8-2, an amorphous silicon film 5 is formed on the entire surface of the glass substrate 2 on which the gate wiring 3 is formed, thereby producing a target substrate (gate substrate) 1 (step 1).
Next, the target substrate 1 is cleaned (step 2). Since the amorphous silicon film 5 of the cleaned target substrate 1 contains hydrogen, the dehydrogenation process is performed at about 450 ℃ for about several hours, for example (step 3).
As shown in fig. 2, the substrate 1 to be processed is placed on the base 11 of the laser annealing apparatus 10 and is moved at a predetermined scanning speed along the transport direction T.
Next, the first irradiation step (step 4) is performed. In step 4, as shown in fig. 8-3, when the planned modification area 6 reaches a predetermined position based on the position information of the planned modification area 6, the control unit 14 outputs a drive signal to the DMD 18. The DMD18 to which the drive signal is input turns on the micromirrors 23a1, 23a2, 23A3, 23a4, 23a5, and 23a6 in the preset columns based on the drive signal.
Fig. 5 shows the on states of the plurality of micromirrors 23a1, 23a2, 23A3, 23a4, 23a5, 23a6 constituting a column (oblique lines are given to the micromirrors 23 in the on state).
In this state, the laser beam LB formed of the pulse laser emitted from the laser light source unit 12 is the laser beams LBd1, LBd2, LBd3, LBd4, LBd5, and LBd6 reflected by the micromirrors 23a1, 23a2, 23A3, 23a4, 23a5, and 23a 6. These laser beams LBd1, LBd2, LBd3, LBd4, LBd5, and LBd6 are laser beams PL shown in fig. 5, and are incident in a line in the vicinity of one side (edge portion on the downstream side in the transport direction T) of the planned modification region 6.
As a result, as shown in fig. 5 and 8 to 4, seed crystal regions 5a1, 5a2, 5A3, 5a4, 5a5, and 5a6 are formed at the downstream end edge portion of the region outside the planned modification region 6 in the transport direction T in the planned modification region 6. The seed crystal regions 5a1, 5a2, 5A3, 5a4, 5a5, and 5a6 are regions in which the amorphous silicon film 5 is changed to microcrystalline silicon. The surfaces of the seed crystal regions 5a1, 5a2, 5A3, 5a4, 5a5, and 5a6 have an uneven structure.
Next, a second irradiation step (step 5) is performed. Fig. 6, 7, and 8-5 show a second irradiation step. Immediately after the first irradiation step is completed, the control unit 14 controls the driving of the laser light source unit 12 and the laser beam irradiation unit 13 based on the position information of the planned modification region 6 to start the second irradiation of the planned modification region 6.
As shown in fig. 6, in the second irradiation step, the beam spot of the CW laser CWL as the second laser beam is projected onto the surface of the amorphous silicon film 5 from the seed regions 5a1, 5a2, 5A3, 5a4, 5a5, and 5a 6. Fig. 6 and 7 show the on states of the micromirrors 23a1, 23a2, 23A3, 23a4, 23a5, and 23a6 that are also used for the second irradiation (the micromirrors 23 in the on state are hatched in a lattice pattern). At this time, the microcrystalline silicon constituting the seed regions 5a1, 5a2, 5A3, 5a4, 5a5, and 5a6 functions as a seed crystal, and the amorphous silicon film 5 is promoted to be mono-like (laterally crystallized) to form a superior mono-like silicon film 5B.
As shown in fig. 7, the second irradiation is performed until the locus of the beam spot of each CW laser light CWL reaches the edge (side) on the upstream side in the transport direction T of the planned modification region 6. As a result, as shown in fig. 7 and 8 to 5, the mono-like silicon film 5B is grown over the entire region to be modified 6.
The single crystal-like silicon film 5B formed through the above steps 4 and 5 has a lateral crystal film composed of the single crystal-like silicon film 5B uniformly formed over the entire planned modification region 6, starting from the seed regions 5a1, 5a2, 5A3, 5a4, 5a5, and 5a 6. The quasi-single crystalline silicon film 5B has a large mobility (electron mobility), and is therefore suitable for the fabrication of a TFT having a high mobility.
As shown in fig. 5 to 7, in the laser annealing method, the seed crystal regions 5a1, 5a2, 5A3, 5a4, 5a5, and 5a6 are set to be spaced apart from each other, whereby the single crystal silicon film 5B is easily grown in the width direction of the gate wiring 3.
Next, as shown in fig. 8 to 6, after the mono-like silicon film 5B is formed through the step 5, a metal film 7 is formed on the entire surface of the substrate by, for example, vapor deposition (step 6). The material of the metal film 7 is, for example, an aluminum (Al) alloy or the like.
Thereafter, an etching mask (not shown) is formed on the metal film 7 by using a photolithography technique (step 7). The etching mask is a resist mask (resist mask) for forming the metal film 7 into source/drain electrodes.
Next, wet etching using, for example, a mixed acid etching solution as an etchant is performed using an etching mask (not shown), and the metal film exposed from the etching mask and the exposed regions of the amorphous silicon film 5 including the seed regions 5a1, 5a2, 5A3, 5a4, 5a5, and 5a6 are removed (step 8).
As a result of performing step 8, as shown in fig. 8 to 7, the metal film 7 is processed into the source electrode 7S, the drain electrode 7D, the source line 7SL, and the like. The amorphous silicon film 5 including the seed regions 5a1, 5a2, 5A3, 5a4, 5a5, and 5a6 exposed by the etching of the metal film 7 is also etched. As a result, as shown in fig. 8 to 7 and 9, the amorphous silicon film 5 in this region is removed to expose the underlying gate insulating film 4. Thus, the manufacturing of the TFT8 is completed.
In the method of manufacturing a thin film transistor according to this embodiment, since the seed regions 5a1, 5a2, 5A3, 5a4, 5a5, and 5a6 are formed outside the planned modification region 6, only the quasi-single crystal silicon film 5B can be formed in the planned modification region 6 which is the channel semiconductor layer region, and the TFT performance can be improved.
In the method for manufacturing a thin film transistor according to the present embodiment, a quasi-single crystal silicon film (a polysilicon film may be grown from a seed region) can be selectively formed in a necessary region, and the seed regions 5a1, 5a2, 5A3, 5a4, 5a5, and 5a6 having an uneven structure can be removed in the subsequent etching step of the metal film 7. Therefore, it is not necessary to perform a process for removing the seed regions 5a1, 5a2, 5A3, 5a4, 5a5, and 5a 6.
In particular, in the method for manufacturing a thin film transistor according to the present embodiment, since the laser light PL is a laser light obtained by on-off modulating the CW laser light CWL by the on-off signal generator 16, the following effects are obtained: the laser light PL and the CW laser light CWL can be realized in one laser light source unit 12, and the first irradiation step and the second irradiation step can be smoothly performed by one apparatus.
According to the method of manufacturing a thin film transistor of the present embodiment, since the planned modification region 6 is the channel semiconductor layer region of the TFT, the quasi-monocrystalline silicon film 5B formed by the second irradiation can be used as it is as the channel semiconductor layer region. Therefore, according to this embodiment, a patterning step (patterning) for forming a channel semiconductor layer region, such as a photolithography step or a wet etching step, and a rinsing/cleaning step after the patterning step are not required, and the number of manufacturing steps of the TFT substrate can be significantly reduced.
In the method of manufacturing the thin film transistor of the present embodiment, the DMD18 is used as the spatial light modulator, and thus the laser beam can be gradually and continuously annealed in the width direction of the planned modification region 6 only by the on/off operation of the micromirror 23. Therefore, it is not necessary to move the substrate 1 to be processed in the width direction or to move the laser beam irradiation section 13 in the width direction of the substrate 1 to be processed.
(other laser annealing apparatus used in laser annealing method)
Fig. 10 and 11 show an imaging optical system of an MLA laser annealing apparatus that can be used in the laser annealing method according to the embodiment of the present invention. Since the other configurations of the MLA laser annealing apparatus are the same as those of the laser annealing apparatus 10 described above, the description thereof will be omitted.
In the MLA laser annealing apparatus, the setting is: when the planned modification region 6 reaches a position directly below the corresponding lens of the microlens array 20, the laser beam LB composed of the pulse laser emitted from the laser light source unit 12 shown in fig. 2 is reflected by the mirror 25, and the laser beam LB2 is irradiated onto the planned modification region 6 through the mask 26. This MLA laser annealing apparatus is used in the first irradiation step of forming the seed region outside the planned modification region 6, which is performed in step 4 of the laser annealing method according to the present embodiment.
In such an MLA laser annealing apparatus, by moving the microlens array 20, the irradiation position accuracy of the laser light can be improved.
[ other embodiments ]
While the embodiments have been described above, it should not be understood that the present invention is limited by the description and drawings constituting a part of the disclosure of the embodiments. Various alternative embodiments, examples, and techniques of use will be apparent to those skilled in the art in view of this disclosure.
For example, in the above-described embodiment, the DMD18 is used, but as the spatial Light modulator, a liquid crystal cell having a Light shutter function, a Grating Light Valve (GLV, registered trademark of silicon optical mechanical corporation), a Thin-film Micro-mirror Array (TMA, Thin-film Micro mirror Array), or the like may be used.
In the above-described embodiment, the DMD18 is used as the spatial light modulator, but the spatial light modulator may be omitted and another light beam moving mechanism for moving the laser beam may be used.
In the first embodiment described above, the laser light PL is generated using the on/off signal generator 16, but the micromirror 23 may be oscillated at high speed to perform pulse width modulation, thereby achieving a low energy density suitable for the first irradiation step.
In the above-described embodiment, the quasi-single crystal silicon film 5B is formed as the crystallized silicon film, but it is needless to say that a structure in which a polysilicon film is grown from the seed crystal region may be adopted. In this case, a high-quality polysilicon film can be formed starting from the seed region. As the second laser light for forming the polysilicon film, an excimer laser light oscillated from an ELA apparatus may be used.
In the above-described embodiment, the structure of the TFT is a so-called bottom gate type structure in which the gate line 3 is formed on the glass substrate 2, but the present invention can also be applied to the manufacture of a so-called top gate type TFT.
Description of the symbols
CWL CW laser
LB laser beam
PL laser
T direction of conveyance
Width dimension of W
1 substrate to be processed
2 glass substrate
3 gate wiring
4 gate insulating film
5 amorphous silicon film
5A1, 5A2, 5A3, 5A4, 5A5, 5A6 seed crystal region
5B-type single crystal silicon (crystallized silicon) film
6 modifying the predetermined region
7 metal film
8 Thin Film Transistor (TFT)
10 laser annealing device
11 base station
12 laser light source unit
13 laser beam irradiation part
14 control part
15 CW laser source
16 on-off signal generator
17 light emitting part
18 digital micro-mirror device (DMD, spatial light modulator)
19 baffle plate
20 micro lens array
21 projection lens
22 drive substrate
23A 1-6 micro mirror
25 reflecting mirror
26 mask

Claims (15)

1. A laser annealing method for modifying a region to be modified of an amorphous silicon film into a crystallized silicon film by irradiating the region to be modified with a laser beam,
the laser annealing method comprises the following steps:
a first irradiation step of irradiating the amorphous silicon film outside the planned modification region with a first laser beam for forming a seed region made of microcrystalline silicon; and
and a second irradiation step of irradiating the surface of the amorphous silicon film with a second laser beam so as to grow crystals such that the amorphous silicon film in the region to be modified becomes the crystallized silicon film, with the seed region as a starting point.
2. The laser annealing method according to claim 1,
the amorphous silicon film is formed on a substrate having a gate wiring formed on a surface thereof with a gate insulating film interposed therebetween,
the region to be modified is a region set on the amorphous silicon film formed in a region overlapping with the gate wiring, and the region to be modified is a region to be a channel semiconductor layer of a thin film transistor,
the seed crystal region is disposed outside in a direction orthogonal to a longitudinal direction of the gate wiring.
3. The laser annealing method according to claim 1 or 2,
the irradiation energy in the first irradiation step of the first laser beam is set to a condition that the amorphous silicon film is microcrystallized as a seed crystal,
the irradiation with the second laser beam in the second irradiation step is performed with continuous oscillation laser beam.
4. The laser annealing method according to claim 3,
the first laser beam is irradiated by on-off modulating the continuous oscillation laser beam used in the second irradiation step.
5. The laser annealing method according to any one of claims 1 to 4,
the first irradiation step and the second irradiation step are performed using a spatial light modulator that selectively reflects laser light to selectively irradiate the laser beam into the predetermined modification region.
6. The laser annealing method according to claim 5,
the spatial light modulator is configured such that a plurality of micromirrors are arranged in a matrix, and the spatial light modulator is selectively driven so that the micromirrors can be individually switched between an irradiation state and a non-irradiation state in which the laser beam is irradiated onto the surface of the amorphous silicon film.
7. The laser annealing method according to any one of claims 1 to 4,
in the first irradiation step, a plurality of laser pulse beams are irradiated to the outside of the planned modification region using a microlens array in which a plurality of microlenses are arranged in a matrix, and in the second irradiation step, a plurality of laser beams of the continuous oscillation laser are irradiated to the planned modification region using the microlens array.
8. The laser annealing method according to any one of claims 1 to 7,
the crystallized silicon film is selected from a polycrystalline silicon film and a quasi-monocrystalline silicon film.
9. A method of manufacturing a thin film transistor, comprising:
a first irradiation step of irradiating a portion of a gate substrate, in which a gate wiring, a gate insulating film, and an amorphous silicon film are formed in this order on a substrate, with a first laser beam to form a seed region made of microcrystalline silicon, the portion being set outside a region to be modified of the amorphous silicon film to be a channel semiconductor layer and being located outside the gate wiring in a direction orthogonal to a longitudinal direction of the gate wiring;
a second irradiation step of irradiating the surface of the amorphous silicon film with a second laser beam so as to grow crystals such that the amorphous silicon film in the region to be modified becomes a crystallized silicon film, with the seed region as a starting point;
forming a metal film over the entire surface of the amorphous silicon film subjected to the second irradiation step;
forming a mask for etching in a region to be a source wiring and a drain wiring on the metal film; and
and etching using the etching mask to remove the metal film exposed without being covered with the etching mask and the amorphous silicon film including the seed region exposed after etching of the metal film.
10. The manufacturing method of a thin film transistor according to claim 9,
the irradiation energy in the first irradiation step of the first laser beam is set to a condition that the amorphous silicon film is microcrystallized as a seed crystal,
the irradiation with the second laser beam in the second irradiation step is performed with continuous oscillation laser beam.
11. The manufacturing method of a thin film transistor according to claim 10,
the continuous oscillation laser used in the second irradiation step is on-off modulated to irradiate the first laser.
12. The method for manufacturing a thin film transistor according to any one of claims 9 to 11,
the first irradiation step and the second irradiation step are performed using a spatial light modulator that selectively reflects laser light to selectively irradiate the laser beam into the predetermined modification region.
13. The manufacturing method of a thin film transistor according to claim 12,
the spatial light modulator is configured such that a plurality of micromirrors are arranged in a matrix, and the spatial light modulator is selectively driven so that the micromirrors can be individually switched between an irradiation state and a non-irradiation state in which the laser beam is irradiated onto the surface of the amorphous silicon film.
14. The method for manufacturing a thin film transistor according to any one of claims 9 to 11,
in the first irradiation step, a plurality of laser modulated light beams are irradiated to the outside of the planned modification region using a microlens array in which a plurality of microlenses are arranged in a matrix, and in the second irradiation step, a plurality of laser beams of the continuous oscillation laser are irradiated to the planned modification region using the microlens array.
15. The method for manufacturing a thin film transistor according to any one of claims 9 to 14,
the crystallized silicon film is selected from a polycrystalline silicon film and a quasi-monocrystalline silicon film.
CN201980076602.6A 2018-12-18 2019-12-03 Laser annealing method and method for manufacturing thin film transistor Pending CN113169050A (en)

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