WO2021039920A1 - Laser annealing device, and laser annealing method - Google Patents

Laser annealing device, and laser annealing method Download PDF

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Publication number
WO2021039920A1
WO2021039920A1 PCT/JP2020/032422 JP2020032422W WO2021039920A1 WO 2021039920 A1 WO2021039920 A1 WO 2021039920A1 JP 2020032422 W JP2020032422 W JP 2020032422W WO 2021039920 A1 WO2021039920 A1 WO 2021039920A1
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laser
laser beam
region
amorphous silicon
silicon film
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PCT/JP2020/032422
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French (fr)
Japanese (ja)
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純一 小杉
映保 楊
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株式会社ブイ・テクノロジー
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Priority to KR1020227001283A priority Critical patent/KR20220052901A/en
Priority to JP2021543012A priority patent/JPWO2021039920A1/ja
Publication of WO2021039920A1 publication Critical patent/WO2021039920A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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    • H01L21/02678—Beam shaping, e.g. using a mask
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Definitions

  • the present invention relates to a laser annealing device and a laser annealing method.
  • Thin displays such as liquid crystal displays (LCD: Liquid Crystal Display) and organic EL displays (OLED: Organic Electroluminescence Display) are becoming larger and higher in definition.
  • LCD Liquid Crystal Display
  • OLED Organic Electroluminescence Display
  • the FPD includes a TFT substrate on which a thin film transistor (TFT) is formed.
  • TFT substrate is a substrate on which fine TFTs for active driving are formed in each of the pixels arranged in a matrix. For example, in the case of a display driven at 120 Hz at a resolution of full HD (1920 ⁇ 1080 dots), 1000 More than 10,000 pixels are formed.
  • Amorphous silicon (a-Si: amorphous Silicon), polycrystalline silicon (p-Si: polysilicon Silicon), etc. are used as the material of the semiconductor layer constituting the TFT.
  • Amorphous silicon has low mobility, which is an index of electron mobility, and cannot meet the high mobility required for FPDs, which are becoming more dense and high-definition. Therefore, as the TFT in the FPD, it is preferable to form a semiconductor layer made of polycrystalline silicon having a higher mobility than amorphous silicon.
  • a line beam-shaped laser having a wavelength of about 532 nm and a green continuous oscillation (CW) laser beam is used as a method for forming polycrystalline silicon or pseudo-single crystal silicon in which lateral (lateral) crystals have been grown.
  • CW green continuous oscillation
  • There is a method of scanning with a beam so as to straddle a plurality of rows of amorphous silicon films processed into a ribbon shape or an island shape see, for example, Patent Document 1).
  • the area of the amorphous silicon film heated by laser annealing is reduced by limiting the forming region of the amorphous silicon film to the forming region of the TFT. This has been attempted to prevent heat from being applied from the amorphous silicon film to the glass substrate, causing the temperature of the glass substrate to rise and causing cracks, and preventing impurities from diffusing into the material film. There is.
  • the conventional laser annealing method using the above-mentioned CW laser has the following problems.
  • this laser annealing method even if the amorphous silicon film is left in the minimum region, a metal wiring pattern such as a gate line or a glass substrate is formed below the amorphous silicon film constituting the TFT (lower layer). Exists. Further, since the laser beam is continuously oscillated, there is a problem that heat is accumulated on the glass substrate and the metal wiring pattern such as a gate line or the glass substrate is overheated and damaged.
  • the present invention has been made in view of the above problems, and is a region in which a TFT is formed without thermally damaging a substrate, a wiring layer, or the like, which is arranged below the amorphous silicon film.
  • An object of the present invention is to provide a laser annealing apparatus and a laser annealing method for efficiently crystallizing only an amorphous silicon film.
  • a gate line is formed on the substrate, and an amorphous silicon film formed on the upper layer of the gate line so as to cover the entire gate line is provided.
  • a laser annealing device that irradiates a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film, and is a light source that emits continuously oscillating laser light and the light source.
  • an optical head that processes the laser beam emitted from the laser beam into a converging laser beam so that the laser beam can be projected in the planned modification region located above the gate line.
  • the laser beam is in the planned modification region in a state where the spot portion most convergent in the laser beam is located inside the amorphous silicon film in the planned modification region. It is characterized by being relatively scanned inside.
  • a continuously oscillating laser beam is applied to an amorphous silicon film in which a gate line is formed on a substrate and a film is formed on the upper layer of the gate line so as to cover the entire substrate.
  • a laser annealing device that irradiates and modifies a region to be modified of the amorphous silicon film into a crystallized film, and is a light source that emits continuously oscillating laser light and the laser light emitted from the light source.
  • the optical head is provided with an optical head that is processed so as to be a converging laser beam so that the laser beam can be projected correspondingly within the planned modification region located above the gate line.
  • the laser beam covers a predetermined region including the planned modification region. It is characterized by being relatively scanned.
  • a continuously oscillating laser beam is applied to an amorphous silicon film in which a gate line is formed on a substrate and is formed on an upper layer of the gate line so as to cover the entire gate line.
  • a laser annealing device that modifies a crystallized film into a crystallized film by irradiating the amorphous silicon film with a light source that emits continuously oscillating laser light and the laser emitted from the light source.
  • the optics comprises an optical head that processes the light into a convergent laser beam so that the laser beam can be projected correspondingly within the planned modification region located above the gate line.
  • the head is the laser beam in a state in which a region including the focal point and the vicinity of the focal point in the laser beam and the beam profile maintains a top hat shape overlaps the region inside the amorphous silicon film of the planned modification region. Is relatively scanned in the planned reforming region.
  • an amorphous silicon film in which a gate line is formed on a substrate and a film is formed on the upper layer of the gate line so as to cover the entire substrate.
  • a laser annealing device that irradiates continuously oscillating laser light to modify the area to be modified of the amorphous silicon film into a crystallized film, and emits a continuously oscillating laser beam and emits from the light source.
  • An optical head that processes the laser beam so as to be a converging laser beam so that the laser beam can be projected in the planned modification region located above the gate line.
  • the region including the focal point and the vicinity of the focal point in the laser beam and the beam profile maintaining the top hat shape overlaps the region inside the amorphous silicon film of the planned modification region.
  • the laser beam is characterized in that a predetermined region including the region to be modified is relatively scanned.
  • the laser beam emitted from the light source is guided to an optical fiber provided in the optical head.
  • the cross-sectional shape perpendicular to the optical axis direction of the optical fiber is a square, a rectangle, or a hexagon.
  • a plurality of gate lines parallel to each other are formed on the substrate, and the plurality of gate lines are formed on the upper layer of the plurality of gate lines so as to cover the entire gate lines.
  • a laser annealing device that irradiates a crystalline silicon film with continuously oscillating laser light to modify the area to be modified of the amorphous silicon film into a crystallized film, and continuously oscillates the laser light.
  • the plurality of emitted light sources and the respective laser beams emitted from the plurality of the light sources are processed so as to be a converging laser beam, and the respective laser beams are located above the gate line.
  • the optical head is provided with an optical head that can be sequentially and correspondingly projected in the planned quality region, and the spot portion of the optical head that converges most in each of the laser beams is the amorphous silicon in the planned modification region. It is characterized in that the laser beam is relatively scanned in the planned modification region while being located inside the membrane of the membrane.
  • a plurality of gate lines parallel to each other are formed on the substrate, and an amorphous silicon film formed on the upper layer of the plurality of gate lines so as to cover the entire substrate.
  • it is a laser annealing device that irradiates a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film, and a plurality of laser annealing devices that emit continuously oscillating laser beams.
  • the light source and each of the laser beams emitted from the plurality of the light sources are processed so as to be a converging laser beam, and each of the laser beams is located in the planned modification region located above the gate line.
  • the spot portion where the most convergent in each of the laser beams is inside the amorphous silicon film in the planned modification region. It is characterized in that the laser beam is relatively scanned in a predetermined region including the region to be reformed while being located at.
  • a plurality of gate lines parallel to each other are formed on the substrate, and the plurality of gate lines are formed on the upper layer of the plurality of gate lines so as to cover the entire gate lines.
  • a laser annealing device that irradiates a crystalline silicon film with continuously oscillating laser light to modify the area to be modified of the amorphous silicon film into a crystallized film, and continuously oscillates the laser light.
  • the plurality of emitted light sources and the respective laser beams emitted from the plurality of the light sources are processed so as to be a converging laser beam, and the respective laser beams are located above the gate line.
  • the optical head is provided with an optical head that can be sequentially and correspondingly projected within the planned quality region, and the optical head includes a focal point and a vicinity of the focal point in each of the laser beams, and a region in which the beam profile maintains the top hat type is provided. It is characterized in that the laser beam is relatively scanned in the planned modification region in a state of overlapping the region inside the amorphous silicon film of the planned modification region.
  • a plurality of gate lines parallel to each other are formed on the substrate, and an amorphous silicon film formed on the upper layer of the plurality of gate lines so as to cover the entire substrate.
  • it is a laser annealing device that irradiates a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film, and a plurality of laser annealing devices that emit continuously oscillating laser beams.
  • the light source and each of the laser beams emitted from the plurality of the light sources are processed so as to be a converging laser beam, and each of the laser beams is located in the planned modification region located above the gate line.
  • the optical head is provided with an optical head capable of projecting in sequence, and the region including the focal point and the vicinity of the focal point in each of the laser beams and the region in which the beam profile maintains the top hat type is scheduled to be modified.
  • the laser beam is characterized in that a predetermined region including the region to be modified is relatively scanned in a state of overlapping the region inside the film of the amorphous silicon film.
  • the region to be modified is a channel semiconductor layer of a thin film transistor.
  • the laser beam emitted from the optical head is projected onto the surface of the amorphous silicon film so as to be aligned at a constant pitch along a predetermined straight line.
  • the optical head can rotate and move so that the pitch of the plurality of laser beams is equal to the pitch of the gate line.
  • the light amount sensor for detecting the light amount of each of the plurality of laser beams is provided, and the output of the light source that emits the laser beam is output based on the light amount of the laser beam detected by the light amount sensor. It is preferably adjustable.
  • the light amount sensor is arranged behind the optical head.
  • the optical head includes a beam splitter that reflects the laser beam laterally, and the light amount sensor is arranged on the side of the optical head.
  • the optical head includes a scan mirror that reflects the laser beam sideways, and the light amount sensor is arranged on the side of the optical head.
  • each of the laser beams emitted from the plurality of light sources is guided to each optical fiber of the fiber array provided in the optical head.
  • the optical head includes the fiber array and the imaging optical system, the fiber array can be moved along the optical axis direction by an actuator, and the imaging optical system is telecentric. It is preferably composed of an optical system.
  • the cross-sectional shape perpendicular to the optical axis direction of the optical fiber is a square, a rectangle, or a hexagon.
  • a continuously oscillating laser beam is applied to an amorphous silicon film in which a gate line is formed on a substrate and is formed on an upper layer of the gate line so as to cover the entire gate line.
  • This is a laser annealing method in which a crystallized film is modified by irradiating the amorphous silicon film with a laser beam that is continuously oscillated from a light source, and the laser light emitted from the light source is emitted.
  • the laser beam is processed by an optical head so as to be a converging laser beam, and the laser beam is projected correspondingly in the planned modification region located above the gate line, and the most of the laser beam.
  • the converging spot portion is arranged so as to be located inside the amorphous silicon film in the planned modification region, and the optical head is relatively scanned by the laser beam in the planned modification region. It is characterized by moving so as to.
  • an amorphous silicon film in which a gate line is formed on a substrate and a film is formed on the upper layer of the gate line so as to cover the entire substrate.
  • This is a laser annealing method in which a continuously oscillating laser beam is irradiated to modify a region to be modified of the amorphous silicon film into a crystallized film.
  • the emitted laser light is processed by an optical head so as to be a converging laser beam, and the laser beam is projected correspondingly within the planned modification region located above the gate line.
  • the spot portion that converges most in the laser beam is arranged so as to be located inside the amorphous silicon film in the planned modification region, and the optical head includes the laser beam in the planned modification region. It is characterized in that a predetermined area is moved so as to be relatively scanned.
  • a continuously oscillating laser beam is applied to an amorphous silicon film in which a gate line is formed on a substrate and is formed on an upper layer of the gate line so as to cover the entire gate line.
  • This is a laser annealing method in which a crystallized film is modified by irradiating the amorphous silicon film with a laser beam that is continuously oscillated from a light source, and the laser light emitted from the light source is emitted.
  • the laser beam is processed by an optical head so as to be a converging laser beam, and the laser beam is projected correspondingly within the planned modification region located above the gate line, and is focused on the laser beam.
  • the region including the vicinity of the focal point and the beam profile maintaining the top hat shape is arranged so as to overlap the region inside the amorphous silicon film of the planned modification region, and the optical head is provided by the laser beam. It is characterized in that it is moved so as to be relatively scanned in the planned modification region.
  • an amorphous silicon film in which a gate line is formed on a substrate and a film is formed on the upper layer of the gate line so as to cover the entire substrate.
  • This is a laser annealing method in which a crystallized film is modified by irradiating a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film.
  • the emitted laser light is processed by an optical head so as to be a convergent laser beam, and the laser beam is projected correspondingly within the planned modification region located above the gate line.
  • the region including the focal point and the vicinity of the focal point and the beam profile maintaining the top hat shape is arranged so as to overlap the region inside the amorphous silicon film of the planned modification region, and the optical head is arranged.
  • the laser beam is moved so as to relatively scan a predetermined region including the region to be modified.
  • a plurality of gate lines parallel to each other are formed on the substrate, and an amorphous film is formed on the upper layer of the plurality of gate lines so as to cover the entire gate lines.
  • This is a laser annealing method in which a silicon film is irradiated with a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film, and is continuously oscillated from each of a plurality of light sources. Laser light is emitted, and each of the laser light emitted from the plurality of light sources is processed by an optical head so as to be a convergent laser beam, and each laser beam is above the gate line.
  • the spots that converge most in each of the laser beams are sequentially and correspondingly projected into the location of the planned modification region so as to be located inside the amorphous silicon film of the planned modification region. It is characterized in that it is arranged and the optical head is moved so that the laser beam is relatively scanned within the planned modification region.
  • a plurality of gate lines parallel to each other are formed on the substrate, and an amorphous silicon film formed on the upper layer of the plurality of gate lines so as to cover the entire substrate.
  • it is a laser annealing method of irradiating a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film, and the laser beam continuously oscillated from each of a plurality of light sources. Is emitted, and each of the laser beams emitted from the plurality of light sources is processed by an optical head so as to be a convergent laser beam, and each of the laser beams is located above the gate line.
  • the laser beams are sequentially and correspondingly projected into the planned modification region, and the spot portion that converges most in each of the laser beams is arranged so as to be located inside the amorphous silicon film of the planned modification region.
  • the optical head is moved so that the laser beam relatively scans a predetermined region including the region to be modified.
  • a plurality of gate lines parallel to each other are formed on the substrate, and an amorphous film is formed on the upper layer of the plurality of gate lines so as to cover the entire gate lines.
  • This is a laser annealing method in which a silicon film is irradiated with a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film, and is continuously oscillated from each of a plurality of light sources. Laser light is emitted, and each of the laser light emitted from the plurality of light sources is processed by an optical head so as to be a convergent laser beam, and each laser beam is above the gate line.
  • the region in which the beam profile maintains the top hat shape, including the focal point and the vicinity of the focal point, in each of the laser beams, which is sequentially and correspondingly projected into the positioned reformed planned region, is the acrystallized region of the reformed planned region. It is characterized in that it is arranged so as to overlap the region inside the quality silicon film, and the optical head is moved so that the laser beam is relatively scanned in the region to be modified.
  • a plurality of gate lines parallel to each other are formed on the substrate, and an amorphous silicon film formed on the upper layer of the plurality of gate lines so as to cover the entire substrate.
  • it is a laser annealing method of irradiating a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film, and the laser beam continuously oscillated from each of a plurality of light sources. Is emitted, and each of the laser beams emitted from the plurality of light sources is processed by an optical head so as to be a convergent laser beam, and each of the laser beams is located above the gate line.
  • the region in which the beam profile maintains the top hat shape, including the focal point and the vicinity of the focal point in each of the laser beams, is the region of the planned reforming region, which is the amorphous silicon film. It is characterized in that the optical head is arranged so as to overlap the region inside the film, and the laser beam is moved so as to be relatively scanned in a predetermined region including the region to be modified.
  • the amorphous silicon in the region to be modified is not thermally damaged, such as the substrate and the gate line, which are arranged below the amorphous silicon film. It has the effect of efficiently crystallizing only the film.
  • FIG. 1 is a cross-sectional explanatory view showing a method of manufacturing a TFT array using the laser annealing apparatus according to the first embodiment of the present invention.
  • FIG. 2 is a configuration diagram showing an outline of a laser annealing apparatus according to the first embodiment of the present invention.
  • FIG. 3 is a plan explanatory view showing a method of manufacturing a TFT array using the laser annealing apparatus according to the first embodiment of the present invention.
  • FIG. 4-1 is a plan explanatory view showing a laser annealing method using the laser annealing apparatus according to the first embodiment of the present invention.
  • FIG. 1 is a cross-sectional explanatory view showing a method of manufacturing a TFT array using the laser annealing apparatus according to the first embodiment of the present invention.
  • FIG. 2 is a configuration diagram showing an outline of a laser annealing apparatus according to the first embodiment of the present invention.
  • FIG. 3 is a plan explanatory view showing a method of manufacturing
  • FIG. 4-2 is a plan explanatory view showing a method of manufacturing a TFT array showing a state in which the optical head is rotated to change the beam pitch in the laser annealing apparatus according to the first embodiment of the present invention.
  • FIG. 5 is a configuration diagram showing an outline of a laser annealing apparatus according to a second embodiment of the present invention.
  • FIG. 6 is a configuration diagram showing an outline of a laser annealing apparatus according to a third embodiment of the present invention.
  • FIG. 7 is a configuration diagram showing an outline of a laser annealing apparatus according to a fourth embodiment of the present invention.
  • FIG. 8 is a side view showing a main part of the laser annealing apparatus according to the fourth embodiment of the present invention.
  • FIG. 9 is a configuration diagram showing an outline of a laser annealing apparatus according to a fifth embodiment of the present invention.
  • FIG. 10 is a configuration diagram showing an outline of a laser annealing apparatus according to a sixth embodiment of the present invention.
  • FIG. 11 is a block diagram of an imaging optical system in the laser annealing apparatus according to the sixth embodiment of the present invention.
  • FIG. 12 is a schematic configuration diagram showing a laser annealing apparatus according to a seventh embodiment of the present invention.
  • FIG. 13 is an explanatory view showing a region A including the focal point and the vicinity of the focal point of the laser beam in the laser annealing apparatus according to the eighth embodiment of the present invention, and the energy density profile maintains the top hat type.
  • FIG. 10 is a configuration diagram showing an outline of a laser annealing apparatus according to a sixth embodiment of the present invention.
  • FIG. 11 is a block diagram of an imaging optical system in the laser annealing apparatus according to the sixth embodiment of the present
  • FIG. 14-1 is an explanatory diagram showing the relationship between the radial position of the laser beam in the region (4) in FIG. 13 and the power density.
  • FIG. 14-2 is an explanatory diagram showing the relationship between the radial position of the laser beam in the region (2) in FIG. 13 and the power density.
  • FIG. 14-3 is an explanatory diagram showing the relationship between the radial position of the laser beam in the region (1) in FIG. 13 and the power density.
  • FIG. 14-4 is an explanatory diagram showing the relationship between the radial position of the laser beam in the region (3) in FIG. 13 and the power density.
  • 14-5 is an explanatory diagram showing the relationship between the radial position of the laser beam in the region (5) in FIG. 13 and the power density.
  • the laser annealing device 1 includes a light source unit 2, an optical head 3, a substrate transfer means (not shown) for transporting the substrate 10, and a displacement meter (not shown). Is equipped with.
  • the light source unit 2 includes a plurality of semiconductor laser LDs (LD1 to LDn) as a light source for oscillating continuously oscillating laser light (CW laser light).
  • the continuously oscillating laser light (CW laser light) is a concept including so-called pseudo continuous oscillation that continuously irradiates the target region with the laser light.
  • the laser beam is a pulse laser
  • the pulse interval is shorter than the cooling time of the silicon thin film (amorphous silicon film) after heating (irradiate with the next pulse before solidifying).
  • the laser light source various lasers such as a semiconductor laser, a solid-state laser, a liquid laser, and a gas laser can be used.
  • the semiconductor lasers LD100 to LDn are provided as the spare R of the semiconductor laser LD.
  • the light source unit 2 includes the above-mentioned plurality of semiconductor laser LDs, a drive circuit 20, and a plurality of coupling lenses 21.
  • the drive circuit 20 is connected to each of the plurality of semiconductor laser LDs and drives each of the semiconductor laser LDs.
  • the coupling lens 21 is connected to the emission side of each semiconductor laser LD.
  • One end of an optical fiber 22 as a waveguide is connected to each coupling lens 21.
  • a multimode fiber is applied as the optical fiber 22.
  • the optical head 3 includes a fiber array 31 and an imaging optical system 32.
  • the other end of the optical fiber 22 is connected to the fiber array 31.
  • the exit ends of the optical fibers 22 connected to the fiber array 31 are arranged in a line along one straight line on the exit side end surface of the fiber array 31.
  • the imaging optical system 32 includes at least a first lens 33 on the incident side and a second lens 34 on the exit side. As shown in FIG. 2, the imaging optical system 32 receives the laser light emitted from the fiber array 31. As shown in FIG. 1, the optical head 3 is processed so as to form a laser beam LBcw in which the laser beam is directed to the downstream side (rear side) and converges at the spot portion F. In the present embodiment, as shown in FIG. 4-1 on the exit side of the optical head 3, the laser beam LBcw is emitted from a position arranged at a pitch P1 along a straight line. This pitch P1 is set to be the same as the pitch of the gate line 12 described later. In this embodiment, the direction in which the laser beams LBcw are lined up is set to be perpendicular to the extending direction of the gate line 12, which will be described later.
  • a displacement meter (not shown) for correcting the positional deviation between the optical head 3 and the substrate 10 is provided on the side of the optical head 3. It has an autofocus function that can automatically adjust the focus of the laser beam LBcw emitted from the optical head 3 based on the data of the amount of misalignment between the optical head 3 and the substrate 10 detected by the displacement meter.
  • a displacement meter is used as a means of autofocus, but the present invention is not limited to this, and various known techniques can be used.
  • the laser beam LBcw has the characteristics of a top hat shape, and the cross-sectional shape in the direction orthogonal to the optical axis is square.
  • the cross-sectional shape of the laser beam LBcw may be rectangular, hexagonal, or the like.
  • the cross-sectional shape of the core of the optical fiber 22 may be set to a square, a rectangle, a hexagon, or the like.
  • the substrate transporting means (not shown) includes a mechanism for transporting the substrate 10 to be subjected to the laser annealing treatment in the scanning direction at an arbitrary speed. Therefore, the laser beam LBcw is scanned relative to the substrate 10 by transporting the substrate 10 side with the position of the optical head 3 fixed.
  • the substrate 10 as the laser-annealed substrate has the glass substrate 11 as the main body.
  • a plurality of gate lines 12 and other metal wiring patterns formed of copper (Cu), a silicon nitride film (Si3N4) 13, a silicon oxide film (SiO2) 14, and a laser annealing treatment are performed.
  • Amorphous silicon film 15a or the like as a film is sequentially laminated.
  • the plurality of gate lines 12 are arranged so as to be parallel to each other. As described above, the pitch between the gate lines 12 is set to the pitch P1.
  • the gate line 12 includes a portion serving as a gate electrode of the TFT formed for each pixel region (not shown).
  • the thickness dimension of the gate line 12 is 200 to 700 nm
  • the thickness dimension of the silicon nitride film 13 is about 300 nm
  • the thickness dimension of the silicon oxide film 14 is 50 to 100 nm
  • the thickness of the amorphous silicon film 15a can be about 50 nm.
  • the beam diameter dimension of the laser beam LBcw irradiated on the surface of the amorphous silicon film 15a is set to, for example, an arbitrary dimension of 5 ⁇ m or more and 300 ⁇ m or less.
  • the range of the beam diameter dimension is such that the irradiation surface of the laser beam LBcw can be accommodated in the semiconductor active region (planned modification region) of the TFT.
  • the diameter of the irradiation surface of the laser beam LBcw is preferably 10 ⁇ m or more and 100 ⁇ m or less.
  • the scanning speed at which the laser beam LBcw is scanned relative to the amorphous silicon film 15a is preferably 200 mm to 500 mm / sec, but is not limited thereto. Absent.
  • the amorphous silicon film 15a is partially formed by irradiating the laser beam LBcw in the planned modification region of the amorphous silicon film 15a along the extending direction of the gate line 12 under the above-mentioned conditions. It can be modified into a pseudo-single crystal silicon film 15La. The region where the pseudo single crystal silicon film 15La is formed coincides with the region to be modified.
  • the laser annealing apparatus 1 since the spot portion F having a high power density in the laser beam LBcw is located inside the amorphous silicon film 15a, the focus is on the amorphous silicon film 15a. A large amount of heat is supplied. Then, most of the heat is transferred from the spot portion F toward the side (direction of arrow h in FIG. 1) in the amorphous silicon film 15a. Since the beam is diffused on the rear side (lower side) of the spot portion F, the power density of the light reaching the underlying silicon oxide film 14 or the like becomes low, and the lower layer side of the amorphous silicon film 15a is overheated. Can be suppressed. Therefore, according to the laser annealing device 1 according to the present embodiment, it is possible to prevent the gate line 12, other wiring patterns, the glass substrate 11, and the like from being damaged by overheating.
  • the laser annealing apparatus 1 According to the laser annealing apparatus 1 according to the present embodiment, even in a state where the amorphous silicon film 15a is formed so as to cover the entire gate line 12, the gate line 12 and other wiring and the glass substrate 11 are covered. No damage occurs.
  • the energy efficiency can be improved.
  • the spot portion F may have a finite width (margin) in the optical axis direction as a range in which the power density maintains the characteristics of the top hat shape. This is because a uniform annealing treatment can be performed within such a range, and a state in which energy is concentrated on the amorphous silicon film 15a is maintained.
  • the range in which the power density in the spot portion F maintains the characteristics of the top hat shape will be described later in the eighth embodiment.
  • the beam diameter of the laser beam LBcw can be considered as the diameter dimension of the flat portion of the top hat type shape. This is because it is sufficient if the planned reforming region can be uniformly annealed, and the power density decreases sharply outside the flat portion of the top hat shape in the laser beam LBcw, so that thermal damage is avoided and energy is used. This is because it is possible to achieve both improvement in efficiency.
  • the beam diameter is smaller than the planned modification region. It doesn't matter if it's big. This is because the heat generation is concentrated on the amorphous silicon 15a, and the energy utilization efficiency is greatly improved as compared with the conventional annealing treatment with a line beam.
  • the beam diameter is sufficiently smaller than the distance between the gate lines, for example, the beam diameter is 1/10 or less of the distance between the gate lines.
  • the irradiation region when the irradiation region of the laser beam LBcw protrudes in the width direction of the gate line is defined as a predetermined region including the region to be modified in the present invention.
  • FIG. 4-2 shows an optical head 3 of a modified example of the laser annealing device 1 according to the first embodiment of the present invention.
  • the optical head 3 is set to be rotatably driven by a rotary drive unit (not shown).
  • the basic configuration of the optical head 3 in this modification is the same as that of the first embodiment.
  • the pitch P2 between the gate lines 12 is shorter than the pitch P1 of the gate line 12 shown in FIG. 4-1.
  • the region to be modified of the amorphous silicon film 15a above the gate line 12 is planned to be modified by rotating and adjusting the optical head 3 so that the laser beam LBcw corresponds to the plurality of gate lines 12. It is possible to accurately irradiate the laser beam LBcw.
  • the optical head 3 rotated and moved diagonally as shown in FIG. 4-2 is scanned relative to the substrate 10, the timing at which the laser beam LBcw is irradiated to the appropriate modification planned region is the gate. Since the lines 12 are sequentially shifted, the drive circuit 20 may be set to sequentially delay the output timing to the semiconductor laser LD.
  • the pitch between the rows irradiated with the laser beam LBcw can be changed by the rotation of the optical head 3. Therefore, it is possible to realize a laser annealing device that can be applied even when the pitch of the gate line 12 on the substrate is changed.
  • the laser annealing method is a laser annealing treatment method for forming a pseudo single crystal silicon film 15La in a region to be modified on the substrate 10 by using the laser annealing apparatus 1.
  • a plurality of gate lines 12 parallel to each other are formed on the glass substrate 11, and the entire gate lines 12 are covered on the upper layers of the plurality of gate lines 12.
  • the substrate 10 on which the amorphous silicon film 15a is formed is prepared.
  • the substrate 10 is set in a substrate transport means (not shown), continuously oscillating laser light is emitted from each of the semiconductor laser LDs, and the laser beam is converged by the optical head 3 to become a laser beam LBcw.
  • Each laser beam LBcw is sequentially projected into a region to be modified (not shown) located above the gate line 12 so as to correspond to the processing.
  • the spot portion F that converges most in the laser beam LBcw is arranged so as to be located inside the amorphous silicon film 15a in the planned modification region.
  • the substrate 10 is moved by a substrate transport means (not shown) so that the laser beam LBcw relatively scans the inside of the planned modification region along the direction in which the gate line 12 extends.
  • the region to be the channel semiconductor layer of the TFT can be modified into a pseudo single crystal silicon film 15La.
  • the pseudo single crystal silicon film 15La can be formed only in the region where the channel semiconductor layer of the TFT should be formed, energy-efficient annealing can be performed. Therefore, this laser annealing method can realize a significant cost reduction.
  • the area of the entire amorphous silicon film is irradiated with the laser so as to fill the area with the line beam to crystallize the area. There was a seam. Therefore, the mobility of the channel semiconductor layer in the seam region and the channel semiconductor layer in the other regions are different, and the mobility of the channel semiconductor layer of the entire TFT substrate varies.
  • the laser annealing method of the present embodiment since the seam of the irradiation region does not occur, the mobility of the channel semiconductor layer can be made uniform.
  • the gate line 12 and the glass substrate 11 are not thermally damaged, it is possible to realize the production of a TFT substrate having a high yield.
  • FIG. 5 is a schematic configuration diagram showing a laser annealing device 1A according to a second embodiment of the present invention.
  • the present embodiment is characterized by including a light amount sensor D1 that detects the light amount of each of the plurality of laser beams LBcw. Since the other configurations in the present embodiment are the same as those in the laser annealing apparatus 1 according to the first embodiment, the description thereof will be omitted.
  • the light amount sensor D1 is arranged behind the optical head 3 and can be sequentially moved to the spot portion F of the laser beam LBcw. Further, the light amount sensor D1 is set so that the adjacent laser beam LBcw does not enter when detecting the light amount of one laser beam LBcw.
  • the data detected by the light amount sensor D1 is fed back to the drive circuit 20, and the output of the semiconductor laser LD as the light source of the laser beam LBcw is adjusted.
  • the light amount of each laser beam LBcw can be adjusted before the laser annealing process is performed to make the output (light amount) of these laser beam LBcw uniform. Therefore, according to the laser annealing device 1A according to the present embodiment, it is possible to make the electrical characteristics of the channel semiconductor layers of the TFTs uniform.
  • FIG. 6 is a schematic configuration diagram of the laser annealing device 1B according to the third embodiment of the present invention.
  • the laser annealing apparatus 1B according to the present embodiment includes a beam splitter 35 in the optical path in the imaging optical system 32B, and a side lens 36 and a light amount sensor D2 are arranged on the side of the beam splitter 35.
  • the laser beam LBcw reflected by the beam splitter 35 is set to be incident on the light amount sensor D2 through the side lens 36.
  • the other configuration of the laser annealing device 1B according to the present embodiment is the same as that of the first embodiment.
  • the data detected by the light amount sensor D2 is fed back to the drive circuit 20, and the output of the semiconductor laser LD as the light source of the laser beam LBcw is adjusted.
  • the output of each semiconductor laser LD can be adjusted while operating the laser annealing device 1B.
  • FIG. 7 is a schematic configuration diagram showing the laser annealing device 1C according to the fourth embodiment of the present invention
  • FIG. 8 is a side view of a main part of the laser annealing device 1C.
  • the laser annealing device 1C according to the present embodiment reflects the laser light emitted from the fiber array 31 downward (sideways) through the first lens 33 by, for example, a scan mirror SM such as a galvano mirror.
  • the laser beam LBcw reflected by the scan mirror SM is irradiated to the substrate side through the second lens 34 arranged below.
  • the scan mirror SM is set to be rotatable in the direction of arrow A in order to make the degree of inclination changeable.
  • the height dimension of the device can be shortened to make the device compact. Further, by adjusting the rotation of the scan mirror SM, it is possible to adjust the irradiation position of the laser beam LBcw and the depth position of the spot portion F in the film thickness direction from the surface of the amorphous silicon film 15a.
  • FIG. 9 is a schematic configuration diagram of the laser annealing device 1D according to the fifth embodiment of the present invention.
  • This embodiment includes an imaging optical system 32D configured by arranging a mask 37 having an opening 37A at the pupil position in the imaging optical system 32 of the laser annealing apparatus 1A according to the second embodiment.
  • Other configurations of the laser annealing device 1D according to the present embodiment are the same as those of the laser annealing device 1A according to the second embodiment.
  • the pattern of the laser beam LBcw passing through the imaging optical system 32D can be changed by the mask 37. Also in the present embodiment, since the light amount sensor D1 is provided, each light amount of the laser beam LBcw whose pattern is changed can be detected by the light amount sensor D1.
  • FIG. 10 is a schematic configuration diagram of the laser annealing device 1E according to the sixth embodiment of the present invention.
  • FIG. 11 is a schematic configuration diagram of the imaging optical system 38 in the laser annealing apparatus 1E.
  • the laser annealing device 1E includes a fiber array 31 and an imaging optical system 38 as the optical head 3 as in the first embodiment.
  • the other end of the optical fiber 22 is connected to the fiber array 31.
  • the exit ends of the optical fiber 22 are arranged in a row along one straight line on the exit side end surface of the fiber array 31.
  • the imaging optical system 38 is composed of a telecentric optical system. Further, the fiber array 31 is displaced by the actuator 39 along the optical axis direction. In the present embodiment, when the laser annealing device 1E is autofocused, only the fiber array 31 is moved along the optical axis by the actuator 39. At this time, the light source unit 2 and the imaging optical system 38 do not move.
  • the imaging optical system 38 is composed of optical members L1 to L14 such as a plurality of lenses sequentially arranged along the optical axis direction to form a telecentric optical system.
  • the imaging optical system 38 made of such a telecentric optical system, when focusing on the substrate 10, only the lightweight fiber array 31 needs to be moved by the actuator 39, so that quick response is achieved. It is possible to obtain the autofocus performance having the above.
  • the imaging optical system 38 is a telecentric optical system, there is an advantage that the image does not shift with respect to the substrate 10 and the pitch of the irradiation positions of the plurality of laser beams LBcw on the surface of the substrate 10 does not change.
  • a piezo actuator which is a positioning element to which the piezo piezoelectric effect is applied, can be applied.
  • Piezo actuators can accurately position from extremely small ranges such as nanometers to hundreds of microns. Further, since the piezo actuator is made of ceramic, it is very hard and can generate a large force. In addition, the piezo actuator can be driven compactly and energy-saving. In the present embodiment, the piezo actuator is applied as the actuator 39, but it is of course possible to apply another driving means such as a linear motor.
  • FIG. 12 is a schematic configuration diagram showing a laser annealing device 1F according to a seventh embodiment of the present invention.
  • a semiconductor laser LD as a single light source
  • a coupling lens 21 as a single optical fiber 22
  • a single optical head 3 as a substrate transport means (not shown) that transports the substrate 10 , Is equipped.
  • the semiconductor laser LD oscillates continuously oscillating laser light (CW laser light) in the same manner as in each of the above embodiments.
  • the coupling lens 21 is connected to the emission side of the semiconductor laser LD.
  • One end of an optical fiber 22 as a waveguide is connected to the coupling lens 21.
  • a square fiber is applied as the optical fiber 22.
  • the optical head 3 includes a first lens 33 on the incident side and a second lens 34 on the exit side as an imaging optical system.
  • the laser beam emitted from the other end of the optical fiber 22 is incident on the optical head 3.
  • the laser beam is processed so as to be a laser beam LBcw that is directed to the downstream side (rear side) and converges at the spot portion F.
  • the spot portion F is set to be located inside the amorphous silicon film (inside in the depth direction).
  • the laser beam LBcw has the characteristics of a top hat shape, and the cross-sectional shape in the direction orthogonal to the optical axis is square.
  • the cross-sectional shape of the laser beam LBcw may be rectangular, hexagonal, or the like.
  • the cross-sectional shape of the core of the optical fiber 22 may be set to a square, a rectangle, a hexagon, or the like.
  • the substrate transporting means (not shown) includes a mechanism for transporting the substrate 10 to be subjected to the laser annealing treatment in the scanning direction at an arbitrary speed, as in each of the above-described embodiments. Therefore, the laser beam LBcw is scanned relative to the substrate 10 by transporting the substrate 10 side with the position of the optical head 3 fixed.
  • the laser annealing apparatus 1F since the spot portion F having a high power density in the laser beam LBcw is located inside the amorphous silicon film, a large amount of heat is focused on the amorphous silicon film. Is supplied. Then, most of the heat is transferred from the spot portion F toward the side inside the amorphous silicon film. Since the beam is diffused on the rear side (lower side) of the spot portion F, the power density of the light reaching the underlying silicon oxide film or the like is lowered, and it is possible to suppress overheating of the lower layer side of the amorphous silicon film. .. Therefore, according to the laser annealing device 1F, it is possible to prevent the gate line, other wiring patterns, the glass substrate, and the like from being damaged by overheating.
  • a laser beam continuously oscillated from a single light source is emitted from an amorphous silicon film on the upper layer of the gate line, and a laser beam is applied to a single planned modification region. It is a method of irradiating.
  • the action of the laser beam LBcw is the same as the laser annealing method according to the first embodiment.
  • FIG. 13 shows the basic principle of the laser annealing apparatus and the laser annealing method according to the eighth embodiment of the present invention.
  • the laser beam LBcw is scanned in a state where the spot portion F that converges most in the laser beam LBcw is located inside the amorphous silicon film 15a in the planned modification region. It was.
  • the region A including the focal point and the vicinity of the focal point in the laser beam LBcw and the beam profile maintains the top hat type is inside the film of the amorphous silicon film 15a.
  • the laser beam LBcw is scanned in the region to be modified while overlapping the region of. That is, in the laser annealing apparatus according to the present embodiment, it is sufficient that the amorphous silicon 15a overlaps the region A of the laser beam LBcw shown in FIG.
  • the region A includes (1), (2) and (3) in the laser beam LBcw.
  • FIG. 14-3 shows the relationship between the radial position of the laser beam in the range (1) in FIG. 13 and the power density.
  • the region (1) is a region of substantially depth of focus, and as shown in FIG. 14-3, shows a typical top hat type beam profile.
  • the region (2) is located in front of the focal point than the region (1), but as shown in FIG. 14-2, the laser profile is a region that can be regarded as a top hat type.
  • the region (3) is located behind the focal point after the region (1), but as shown in FIG. 14-4, the laser profile is a region that can be regarded as a top hat type.
  • the region (4) is located in front of the region (2), and as shown in FIG. 14-1, the laser profile has a shape that cannot be regarded as a top hat type.
  • the region (5) is located behind the region (3), and as shown in FIG. 14-5, the laser profile has a shape that cannot be regarded as a top hat type. Therefore, in the present embodiment, the region A shown in FIG. 13 is defined as a region in which the beam profile maintains the top hat type. It should be noted that this region A may be appropriately set depending on the conditions such as the optical head 3.
  • the region (1) has a sufficient energy density for annealing the amorphous silicon 15a, and has a width dimension of a flat portion capable of annealing the required region.
  • the regions (2) and (3) are similar to the characteristics of the region (1) as shown in FIGS. 14-2 and 14-4, but the regions (4) and (5) are shown in FIG. As shown in -1 and FIG. 14-5, the energy density is insufficient and the width of the flat portion for annealing the required region is narrow, which is not suitable for local annealing of amorphous silicon 15a. It is an area.
  • the eighth embodiment of the present invention has been described above, but other configurations are the same as the laser annealing apparatus and laser annealing method according to the first embodiment described above.
  • the focal position is apparently located on the substrate or wiring below the amorphous silicon 15a.
  • the amorphous silicon 15a since most of the light is attracted by the amorphous silicon 15a, it does not cause thermal damage to the substrate, wiring, etc. under the amorphous silicon 15a. Therefore, according to the present embodiment, it is possible to easily set the conditions of the optical head 3 and the like, and to reduce the device cost.
  • the top hat type is applied as the laser beam LBcw, but a donut-shaped laser beam LBcw may be used.
  • a donut-shaped laser beam LBcw By using such a donut-shaped laser beam LBcw, there is an advantage that the contour portion of the crystallization film formed in the planned modification region can be reliably crystallized.
  • the other ends of the optical fibers 22 are arranged so as to be aligned on the emission end surface of the fiber array 31, but if the laser beam LBcw can be irradiated corresponding to the gate lines 12 at equal intervals. , The other end of the optical fiber 22 does not have to be aligned in a straight line.
  • the pitch of the plurality of laser beams LBcw is set to be the same as the pitch of the gate line, and the laser beam LBcw is scanned in the direction along the gate line 12. If the pitch of the laser beam LBcw is set to an integral multiple of the pitch of the region to be reformed along the gate line 12, the laser beam LBcw can be scanned in the direction orthogonal to the gate line 12. is there.

Abstract

This laser annealing device is provided with light sources which emit continuous wave laser light, and an optical head which processes the laser light emitted from each light source to form converging laser beams, and which enables the laser beams to be projected to correspond to the inside of a planned reforming region positioned above a gateline, wherein the optical head is configured such that the inside of the planned reforming region is scanned relatively by the laser beam in the direction in which the gateline extends, in a state in which a spot portion at which the laser beam is most converged is positioned inside an amorphous silicon film in the planned reforming region.

Description

レーザアニール装置およびレーザアニール方法Laser annealing equipment and laser annealing method
　本発明は、レーザアニール装置およびレーザアニール方法に関する。 The present invention relates to a laser annealing device and a laser annealing method.
　液晶ディスプレイ（ＬＣＤ:Liquid Crystal Display）、有機ＥＬディスプレイ（ＯＬＥＤ：Organic Electroluminescence Display）などの薄型ディスプレイ（ＦＰＤ：Flat Panel Display）において、大型化および高精細化が進んでいる。 Thin displays (FPD: Flat Panel Display) such as liquid crystal displays (LCD: Liquid Crystal Display) and organic EL displays (OLED: Organic Electroluminescence Display) are becoming larger and higher in definition.
　ＦＰＤは、薄膜トランジスタ（ＴＦＴ：Thin Film Transistor）が形成されたＴＦＴ基板を備える。ＴＦＴ基板は、マトリクス状に配置された画素のそれぞれにアクティブ駆動するための微細なＴＦＴを形成した基板であり、例えば、フルＨＤ（１９２０×１０８０ドット）の解像度で１２０Ｈｚ駆動のディスプレイの場合、１０００万個以上の画素が形成されている。 The FPD includes a TFT substrate on which a thin film transistor (TFT) is formed. The TFT substrate is a substrate on which fine TFTs for active driving are formed in each of the pixels arranged in a matrix. For example, in the case of a display driven at 120 Hz at a resolution of full HD (1920 × 1080 dots), 1000 More than 10,000 pixels are formed.
　ＴＦＴを構成する半導体層の材料としては、非晶質シリコン（ａ－Ｓｉ：amorphous Silicon）や、多結晶シリコン（p－Ｓｉ：polycrystalline Silicon）などが用いられている。非晶質シリコンは、電子の動き易さの指標である移動度が低く、さらに高密度・高精細化が進むＦＰＤで要求される高移動度には対応しきれない。そこで、ＦＰＤにおけるＴＦＴとしては、非晶質シリコンよりも移動度が高い多結晶シリコンでなる半導体層を形成することが好ましい。 Amorphous silicon (a-Si: amorphous Silicon), polycrystalline silicon (p-Si: polysilicon Silicon), etc. are used as the material of the semiconductor layer constituting the TFT. Amorphous silicon has low mobility, which is an index of electron mobility, and cannot meet the high mobility required for FPDs, which are becoming more dense and high-definition. Therefore, as the TFT in the FPD, it is preferable to form a semiconductor layer made of polycrystalline silicon having a higher mobility than amorphous silicon.
　近年、多結晶シリコンや、横方向（ラテラル）結晶成長させた疑似単結晶シリコンを形成する方法として、例えば、波長が５３２ｎｍ程度の緑色系の連続発振（ＣＷ）レーザ光でなるラインビーム状のレーザビームで、複数列のリボン状もしくはアイランド状に加工した非晶質シリコン膜を跨ぐように、スキャンするという方法がある（例えば、特許文献１参照）。この方法では、非晶質シリコン膜の形成領域をＴＦＴの形成領域に限定することにより、レーザアニールによって加熱される非晶質シリコン膜の面積を小さくしている。これによって、非晶質シリコン膜からガラス基板へ熱が及びガラス基板の温度を上昇されてクラックが発生することや、不純物が材料膜中に拡散したりすることなどを防止することが試みられている。 In recent years, as a method for forming polycrystalline silicon or pseudo-single crystal silicon in which lateral (lateral) crystals have been grown, for example, a line beam-shaped laser having a wavelength of about 532 nm and a green continuous oscillation (CW) laser beam is used. There is a method of scanning with a beam so as to straddle a plurality of rows of amorphous silicon films processed into a ribbon shape or an island shape (see, for example, Patent Document 1). In this method, the area of the amorphous silicon film heated by laser annealing is reduced by limiting the forming region of the amorphous silicon film to the forming region of the TFT. This has been attempted to prevent heat from being applied from the amorphous silicon film to the glass substrate, causing the temperature of the glass substrate to rise and causing cracks, and preventing impurities from diffusing into the material film. There is.
特開２００３－８６５０５号公報Japanese Unexamined Patent Publication No. 2003-86505
　上述のＣＷレーザを用いた従来のレーザアニール方法においては、以下のような課題がある。このレーザアニール方法では、非晶質シリコン膜を最小限の領域に残したとしても、ＴＦＴを構成する非晶質シリコン膜の下方（下層）には、ゲートラインなどの金属配線パターンやガラス基板が存在する。また、レーザビームが連続発振であるため、ガラス基板上に熱が蓄積してこもることによりゲートラインなどの金属配線パターンやガラス基板を過熱して損傷させるという問題がある。加えて、このレーザアニール方法では、４００～５５０ｎｍ程度の青色もしくは緑色系のレーザ光を用いた場合、ビームが非晶質シリコン膜よりも下層のゲートラインなどの金属配線パターンやガラス基板まで達してしまうため、こもった熱の作用と相まってゲートラインなどの金属配線パターンやガラス基板を過熱して損傷させるという問題がある。特に、上述のＣＷレーザを用いたレーザアニール方法では、基板として可撓性を有する、例えば、ポリイミドなどの樹脂でなる基板を適用することが困難であった。さらに、上述のＣＷレーザを用いたレーザアニール方法では、ラインビーム状のレーザビームを用いるため、ＴＦＴの活性半導体層とすべき領域以外の領域（非晶質シリコン膜を除去した領域）もアニールするため、エネルギー利用効率が悪いという課題がある。 The conventional laser annealing method using the above-mentioned CW laser has the following problems. In this laser annealing method, even if the amorphous silicon film is left in the minimum region, a metal wiring pattern such as a gate line or a glass substrate is formed below the amorphous silicon film constituting the TFT (lower layer). Exists. Further, since the laser beam is continuously oscillated, there is a problem that heat is accumulated on the glass substrate and the metal wiring pattern such as a gate line or the glass substrate is overheated and damaged. In addition, in this laser annealing method, when a blue or green laser light of about 400 to 550 nm is used, the beam reaches a metal wiring pattern such as a gate line or a glass substrate below the amorphous silicon film. Therefore, there is a problem that the metal wiring pattern such as the gate line and the glass substrate are overheated and damaged in combination with the action of the trapped heat. In particular, in the laser annealing method using the above-mentioned CW laser, it is difficult to apply a flexible substrate, for example, a substrate made of a resin such as polyimide. Further, in the laser annealing method using the CW laser described above, since a line beam-shaped laser beam is used, a region other than the region to be the active semiconductor layer of the TFT (a region from which the amorphous silicon film is removed) is also annealed. Therefore, there is a problem that energy utilization efficiency is poor.
　本発明は、上記の課題に鑑みてなされたものであって、非晶質シリコン膜よりも下層に配置された、基板ならびに配線層などを熱的損傷させることなく、ＴＦＴが形成される領域の非晶質シリコン膜のみを効率的に結晶化させるレーザアニール装置およびレーザアニール方法を提供することを目的とする。 The present invention has been made in view of the above problems, and is a region in which a TFT is formed without thermally damaging a substrate, a wiring layer, or the like, which is arranged below the amorphous silicon film. An object of the present invention is to provide a laser annealing apparatus and a laser annealing method for efficiently crystallizing only an amorphous silicon film.
　上述した課題を解決し、目的を達成するために、基板の上にゲートラインが形成され、前記ゲートラインの上層に前記ゲートラインの全体を覆うように成膜された非晶質シリコン膜に対して、連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール装置であって、連続発振されるレーザ光を出射する光源と、前記光源から出射された前記レーザ光を、収束するレーザビームとなるように加工して、前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に対応して投影可能にする光学ヘッドと、を備え、前記光学ヘッドは、前記レーザビームにおいて最も収束するスポット部が、前記改質予定領域の前記非晶質シリコン膜の膜内部に位置する状態で、前記レーザビームが前記改質予定領域内を相対的にスキャンされることを特徴とする。 In order to solve the above-mentioned problems and achieve the purpose, a gate line is formed on the substrate, and an amorphous silicon film formed on the upper layer of the gate line so as to cover the entire gate line is provided. A laser annealing device that irradiates a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film, and is a light source that emits continuously oscillating laser light and the light source. With an optical head that processes the laser beam emitted from the laser beam into a converging laser beam so that the laser beam can be projected in the planned modification region located above the gate line. In the optical head, the laser beam is in the planned modification region in a state where the spot portion most convergent in the laser beam is located inside the amorphous silicon film in the planned modification region. It is characterized by being relatively scanned inside.
　本発明の他の態様は、基板の上にゲートラインが形成され、前記ゲートラインの上層に前記基板の全体を覆うように成膜された非晶質シリコン膜に対して、連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール装置であって、連続発振されるレーザ光を出射する光源と、前記光源から出射された前記レーザ光を、収束するレーザビームとなるように加工して、前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に対応して投影可能にする光学ヘッドと、を備え、前記光学ヘッドは、前記レーザビームにおいて最も収束するスポット部が、前記改質予定領域の前記非晶質シリコン膜の膜内部に位置する状態で、前記レーザビームが前記改質予定領域を内包する所定の領域を相対的にスキャンされることを特徴とする。 In another aspect of the present invention, a continuously oscillating laser beam is applied to an amorphous silicon film in which a gate line is formed on a substrate and a film is formed on the upper layer of the gate line so as to cover the entire substrate. A laser annealing device that irradiates and modifies a region to be modified of the amorphous silicon film into a crystallized film, and is a light source that emits continuously oscillating laser light and the laser light emitted from the light source. The optical head is provided with an optical head that is processed so as to be a converging laser beam so that the laser beam can be projected correspondingly within the planned modification region located above the gate line. In a state where the spot portion that converges most in the laser beam is located inside the amorphous silicon film of the planned modification region, the laser beam covers a predetermined region including the planned modification region. It is characterized by being relatively scanned.
　本発明の他の態様は、基板の上にゲートラインが形成され、前記ゲートラインの上層に前記ゲートラインの全体を覆うように成膜された非晶質シリコン膜に対して、連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール装置であって、連続発振されるレーザ光を出射する光源と、前記光源から出射された前記レーザ光を、収束するレーザビームとなるように加工して、前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に対応して投影可能にする光学ヘッドと、を備え、前記光学ヘッドは、前記レーザビームにおける焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域が、前記改質予定領域の前記非晶質シリコン膜の膜内部の領域に重なる状態で、前記レーザビームが前記改質予定領域内を相対的にスキャンされることを特徴とする。 In another aspect of the present invention, a continuously oscillating laser beam is applied to an amorphous silicon film in which a gate line is formed on a substrate and is formed on an upper layer of the gate line so as to cover the entire gate line. A laser annealing device that modifies a crystallized film into a crystallized film by irradiating the amorphous silicon film with a light source that emits continuously oscillating laser light and the laser emitted from the light source. The optics comprises an optical head that processes the light into a convergent laser beam so that the laser beam can be projected correspondingly within the planned modification region located above the gate line. The head is the laser beam in a state in which a region including the focal point and the vicinity of the focal point in the laser beam and the beam profile maintains a top hat shape overlaps the region inside the amorphous silicon film of the planned modification region. Is relatively scanned in the planned reforming region.
　本発明の他の態様は、基板の上にゲートラインが形成され、前記ゲートラインの上層に前記基板の全体を覆うように成膜された非晶質シリコン膜に対して、
　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール装置であって、連続発振されるレーザ光を出射する光源と、前記光源から出射された前記レーザ光を、収束するレーザビームとなるように加工して、前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に対応して投影可能にする光学ヘッドと、を備え、前記光学ヘッドは、前記レーザビームにおける焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域が、前記改質予定領域の前記非晶質シリコン膜の膜内部の領域に重なる状態で、前記レーザビームが前記改質予定領域を内包する所定の領域を相対的にスキャンされることを特徴とする。 In another aspect of the present invention, with respect to an amorphous silicon film in which a gate line is formed on a substrate and a film is formed on the upper layer of the gate line so as to cover the entire substrate.
A laser annealing device that irradiates continuously oscillating laser light to modify the area to be modified of the amorphous silicon film into a crystallized film, and emits a continuously oscillating laser beam and emits from the light source. An optical head that processes the laser beam so as to be a converging laser beam so that the laser beam can be projected in the planned modification region located above the gate line. In the optical head, the region including the focal point and the vicinity of the focal point in the laser beam and the beam profile maintaining the top hat shape overlaps the region inside the amorphous silicon film of the planned modification region. The laser beam is characterized in that a predetermined region including the region to be modified is relatively scanned.
　上記態様としては、前記光源から出射された前記レーザ光は、前記光学ヘッドに設けられた光ファイバに導かれることが好ましい。 In the above aspect, it is preferable that the laser beam emitted from the light source is guided to an optical fiber provided in the optical head.
　上記態様としては、前記光ファイバの光軸方向と直角をなす断面形状が、正方形、長方形、あるいは六角形であることが好ましい。 In the above aspect, it is preferable that the cross-sectional shape perpendicular to the optical axis direction of the optical fiber is a square, a rectangle, or a hexagon.
　本発明の他の態様は、基板の上に互いに平行をなす複数のゲートラインが形成され、前記複数の前記ゲートラインの上層に前記複数の前記ゲートラインの全体を覆うように成膜された非晶質シリコン膜に対して、連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール装置であって、連続発振されるレーザ光をそれぞれ出射する複数の光源と、複数の前記光源から出射されたそれぞれの前記レーザ光を、収束するレーザビームとなるように加工して、それぞれの前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に順次、対応して投影可能にする光学ヘッドと、を備え、前記光学ヘッドは、それぞれの前記レーザビームにおいて最も収束するスポット部が、前記改質予定領域の前記非晶質シリコン膜の膜内部に位置する状態で、前記レーザビームが前記改質予定領域内を相対的にスキャンされることを特徴とする。 In another aspect of the present invention, a plurality of gate lines parallel to each other are formed on the substrate, and the plurality of gate lines are formed on the upper layer of the plurality of gate lines so as to cover the entire gate lines. A laser annealing device that irradiates a crystalline silicon film with continuously oscillating laser light to modify the area to be modified of the amorphous silicon film into a crystallized film, and continuously oscillates the laser light. The plurality of emitted light sources and the respective laser beams emitted from the plurality of the light sources are processed so as to be a converging laser beam, and the respective laser beams are located above the gate line. The optical head is provided with an optical head that can be sequentially and correspondingly projected in the planned quality region, and the spot portion of the optical head that converges most in each of the laser beams is the amorphous silicon in the planned modification region. It is characterized in that the laser beam is relatively scanned in the planned modification region while being located inside the membrane of the membrane.
　本発明の他の態様は、基板の上に互いに平行をなす複数のゲートラインが形成され、前記複数の前記ゲートラインの上層に前記基板の全体を覆うように成膜された非晶質シリコン膜に対して、連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール装置であって、連続発振されるレーザ光をそれぞれ出射する複数の光源と、複数の前記光源から出射されたそれぞれの前記レーザ光を、収束するレーザビームとなるように加工して、それぞれの前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に順次、対応して投影可能にする光学ヘッドと、を備え、前記光学ヘッドは、それぞれの前記レーザビームにおいて最も収束するスポット部が、前記改質予定領域の前記非晶質シリコン膜の膜内部に位置する状態で、前記レーザビームが前記改質予定領域を内包する所定の領域を相対的にスキャンされることを特徴とする。 In another aspect of the present invention, a plurality of gate lines parallel to each other are formed on the substrate, and an amorphous silicon film formed on the upper layer of the plurality of gate lines so as to cover the entire substrate. On the other hand, it is a laser annealing device that irradiates a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film, and a plurality of laser annealing devices that emit continuously oscillating laser beams. The light source and each of the laser beams emitted from the plurality of the light sources are processed so as to be a converging laser beam, and each of the laser beams is located in the planned modification region located above the gate line. In the optical head, the spot portion where the most convergent in each of the laser beams is inside the amorphous silicon film in the planned modification region. It is characterized in that the laser beam is relatively scanned in a predetermined region including the region to be reformed while being located at.
　本発明の他の態様は、基板の上に互いに平行をなす複数のゲートラインが形成され、前記複数の前記ゲートラインの上層に前記複数の前記ゲートラインの全体を覆うように成膜された非晶質シリコン膜に対して、連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール装置であって、連続発振されるレーザ光をそれぞれ出射する複数の光源と、複数の前記光源から出射されたそれぞれの前記レーザ光を、収束するレーザビームとなるように加工して、それぞれの前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に順次、対応して投影可能にする光学ヘッドと、を備え、前記光学ヘッドは、それぞれの前記レーザビームにおける焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域が、前記改質予定領域の前記非晶質シリコン膜の膜内部の領域に重なる状態で、前記レーザビームが前記改質予定領域内を相対的にスキャンされることを特徴とする。 In another aspect of the present invention, a plurality of gate lines parallel to each other are formed on the substrate, and the plurality of gate lines are formed on the upper layer of the plurality of gate lines so as to cover the entire gate lines. A laser annealing device that irradiates a crystalline silicon film with continuously oscillating laser light to modify the area to be modified of the amorphous silicon film into a crystallized film, and continuously oscillates the laser light. The plurality of emitted light sources and the respective laser beams emitted from the plurality of the light sources are processed so as to be a converging laser beam, and the respective laser beams are located above the gate line. The optical head is provided with an optical head that can be sequentially and correspondingly projected within the planned quality region, and the optical head includes a focal point and a vicinity of the focal point in each of the laser beams, and a region in which the beam profile maintains the top hat type is provided. It is characterized in that the laser beam is relatively scanned in the planned modification region in a state of overlapping the region inside the amorphous silicon film of the planned modification region.
　本発明の他の態様は、基板の上に互いに平行をなす複数のゲートラインが形成され、前記複数の前記ゲートラインの上層に前記基板の全体を覆うように成膜された非晶質シリコン膜に対して、連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール装置であって、連続発振されるレーザ光をそれぞれ出射する複数の光源と、複数の前記光源から出射されたそれぞれの前記レーザ光を、収束するレーザビームとなるように加工して、それぞれの前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に順次、対応して投影可能にする光学ヘッドと、を備え、前記光学ヘッドは、それぞれの前記レーザビームにおける焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域が、前記改質予定領域の前記非晶質シリコン膜の膜内部の領域に重なる状態で、前記レーザビームが前記改質予定領域を内包する所定の領域を相対的にスキャンされることを特徴とする。 In another aspect of the present invention, a plurality of gate lines parallel to each other are formed on the substrate, and an amorphous silicon film formed on the upper layer of the plurality of gate lines so as to cover the entire substrate. On the other hand, it is a laser annealing device that irradiates a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film, and a plurality of laser annealing devices that emit continuously oscillating laser beams. The light source and each of the laser beams emitted from the plurality of the light sources are processed so as to be a converging laser beam, and each of the laser beams is located in the planned modification region located above the gate line. The optical head is provided with an optical head capable of projecting in sequence, and the region including the focal point and the vicinity of the focal point in each of the laser beams and the region in which the beam profile maintains the top hat type is scheduled to be modified. The laser beam is characterized in that a predetermined region including the region to be modified is relatively scanned in a state of overlapping the region inside the film of the amorphous silicon film.
　上記態様としては、前記改質予定領域は、薄膜トランジスタのチャネル半導体層であることが好ましい。 In the above aspect, it is preferable that the region to be modified is a channel semiconductor layer of a thin film transistor.
　上記態様としては、前記光学ヘッドから出射された前記レーザビームは、前記非晶質シリコン膜の表面に対して所定の直線に沿って一定のピッチで並ぶように投影されることが好ましい。 In the above aspect, it is preferable that the laser beam emitted from the optical head is projected onto the surface of the amorphous silicon film so as to be aligned at a constant pitch along a predetermined straight line.
　上記態様としては、前記光学ヘッドは、前記複数の前記レーザビームのピッチが、ゲートラインのピッチに等しくなるように回転移動可能であることが好ましい。 In the above aspect, it is preferable that the optical head can rotate and move so that the pitch of the plurality of laser beams is equal to the pitch of the gate line.
　上記態様としては、前記複数の前記レーザビームのそれぞれの光量を検出する光量センサを備え、前記光量センサで検出された前記レーザビームの光量に基づいて、当該レーザビームを出射する前記光源の出力を調整可能であることが好ましい。 In the above aspect, the light amount sensor for detecting the light amount of each of the plurality of laser beams is provided, and the output of the light source that emits the laser beam is output based on the light amount of the laser beam detected by the light amount sensor. It is preferably adjustable.
　上記態様としては、前記光量センサは、前記光学ヘッドの後方に配置されることが好ましい。 In the above aspect, it is preferable that the light amount sensor is arranged behind the optical head.
　上記態様としては、前記光学ヘッドは、前記レーザビームを側方へ反射するビームスプリッタを備え、前記光量センサは、前記光学ヘッドの側方に配置されることが好ましい。 In the above aspect, it is preferable that the optical head includes a beam splitter that reflects the laser beam laterally, and the light amount sensor is arranged on the side of the optical head.
　上記態様としては、前記光学ヘッドは、前記レーザビームを側方へ反射するスキャンミラーを備え、前記光量センサは、前記光学ヘッドの側方に配置されることが好ましい。 In the above aspect, it is preferable that the optical head includes a scan mirror that reflects the laser beam sideways, and the light amount sensor is arranged on the side of the optical head.
　上記態様としては、前記複数の前記光源から出射されたそれぞれの前記レーザ光は、前記光学ヘッドに設けられたファイバアレイのそれぞれの光ファイバに導かれることが好ましい。 In the above aspect, it is preferable that each of the laser beams emitted from the plurality of light sources is guided to each optical fiber of the fiber array provided in the optical head.
　上記態様としては、前記光学ヘッドは、前記ファイバアレイと、結像光学系と、を備え、前記ファイバアレイは、アクチュエータにより光軸方向に沿って移動可能であり、前記結像光学系は、テレセントリック光学系で構成されていることが好ましい。 In the above aspect, the optical head includes the fiber array and the imaging optical system, the fiber array can be moved along the optical axis direction by an actuator, and the imaging optical system is telecentric. It is preferably composed of an optical system.
　上記態様としては、前記光ファイバの光軸方向と直角をなす断面形状が、正方形、長方形、あるいは六角形であることが好ましい。 In the above aspect, it is preferable that the cross-sectional shape perpendicular to the optical axis direction of the optical fiber is a square, a rectangle, or a hexagon.
　本発明の他の態様は、基板の上にゲートラインが形成され、前記ゲートラインの上層に前記ゲートラインの全体を覆うように成膜された非晶質シリコン膜に対して、連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール方法であって、光源から、連続発振されるレーザ光を出射させ、前記光源から出射された前記レーザ光を、光学ヘッドで、収束するレーザビームとなるように加工して、前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に対応して投影させ、前記レーザビームにおいて最も収束するスポット部が、前記改質予定領域の前記非晶質シリコン膜の膜内部に位置するように配置させ、前記光学ヘッドを、前記レーザビームが前記改質予定領域内を相対的にスキャンされるように移動させることを特徴とする。 In another aspect of the present invention, a continuously oscillating laser beam is applied to an amorphous silicon film in which a gate line is formed on a substrate and is formed on an upper layer of the gate line so as to cover the entire gate line. This is a laser annealing method in which a crystallized film is modified by irradiating the amorphous silicon film with a laser beam that is continuously oscillated from a light source, and the laser light emitted from the light source is emitted. The laser beam is processed by an optical head so as to be a converging laser beam, and the laser beam is projected correspondingly in the planned modification region located above the gate line, and the most of the laser beam. The converging spot portion is arranged so as to be located inside the amorphous silicon film in the planned modification region, and the optical head is relatively scanned by the laser beam in the planned modification region. It is characterized by moving so as to.
　本発明の他の態様は、基板の上にゲートラインが形成され、前記ゲートラインの上層に前記基板の全体を覆うように成膜された非晶質シリコン膜に対して、
　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール方法であって、光源から、連続発振されるレーザ光を出射させ、前記光源から出射された前記レーザ光を、光学ヘッドで、収束するレーザビームとなるように加工して、前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に対応して投影させ、前記レーザビームにおいて最も収束するスポット部が、前記改質予定領域の前記非晶質シリコン膜の膜内部に位置するように配置させ、前記光学ヘッドを、前記レーザビームが前記改質予定領域を内包する所定の領域を相対的にスキャンされるように移動させることを特徴とする。 In another aspect of the present invention, with respect to an amorphous silicon film in which a gate line is formed on a substrate and a film is formed on the upper layer of the gate line so as to cover the entire substrate.
This is a laser annealing method in which a continuously oscillating laser beam is irradiated to modify a region to be modified of the amorphous silicon film into a crystallized film. The emitted laser light is processed by an optical head so as to be a converging laser beam, and the laser beam is projected correspondingly within the planned modification region located above the gate line. The spot portion that converges most in the laser beam is arranged so as to be located inside the amorphous silicon film in the planned modification region, and the optical head includes the laser beam in the planned modification region. It is characterized in that a predetermined area is moved so as to be relatively scanned.
　本発明の他の態様は、基板の上にゲートラインが形成され、前記ゲートラインの上層に前記ゲートラインの全体を覆うように成膜された非晶質シリコン膜に対して、連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール方法であって、光源から、連続発振されるレーザ光を出射させ、前記光源から出射された前記レーザ光を、光学ヘッドで、収束するレーザビームとなるように加工して、前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に対応して投影させ、前記レーザビームにおいて焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域が、前記改質予定領域の前記非晶質シリコン膜の膜内部の領域に重なるように配置させ、前記光学ヘッドを、前記レーザビームが前記改質予定領域内を相対的にスキャンされるように移動させることを特徴とする。 In another aspect of the present invention, a continuously oscillating laser beam is applied to an amorphous silicon film in which a gate line is formed on a substrate and is formed on an upper layer of the gate line so as to cover the entire gate line. This is a laser annealing method in which a crystallized film is modified by irradiating the amorphous silicon film with a laser beam that is continuously oscillated from a light source, and the laser light emitted from the light source is emitted. The laser beam is processed by an optical head so as to be a converging laser beam, and the laser beam is projected correspondingly within the planned modification region located above the gate line, and is focused on the laser beam. The region including the vicinity of the focal point and the beam profile maintaining the top hat shape is arranged so as to overlap the region inside the amorphous silicon film of the planned modification region, and the optical head is provided by the laser beam. It is characterized in that it is moved so as to be relatively scanned in the planned modification region.
　本発明の他の態様は、基板の上にゲートラインが形成され、前記ゲートラインの上層に前記基板の全体を覆うように成膜された非晶質シリコン膜に対して、
　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール方法であって、光源から、連続発振されるレーザ光を出射させ、前記光源から出射された前記レーザ光を、光学ヘッドで、収束するレーザビームとなるように加工して、前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に対応して投影させ、前記レーザビームにおいて焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域が、前記改質予定領域の前記非晶質シリコン膜の膜内部の領域に重なるように配置させ、前記光学ヘッドを、前記レーザビームが前記改質予定領域を内包する所定の領域を相対的にスキャンされるように移動させることを特徴とする。 In another aspect of the present invention, with respect to an amorphous silicon film in which a gate line is formed on a substrate and a film is formed on the upper layer of the gate line so as to cover the entire substrate.
This is a laser annealing method in which a crystallized film is modified by irradiating a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film. The emitted laser light is processed by an optical head so as to be a convergent laser beam, and the laser beam is projected correspondingly within the planned modification region located above the gate line. In the laser beam, the region including the focal point and the vicinity of the focal point and the beam profile maintaining the top hat shape is arranged so as to overlap the region inside the amorphous silicon film of the planned modification region, and the optical head is arranged. The laser beam is moved so as to relatively scan a predetermined region including the region to be modified.
　本発明の他の態様は、基板の上に互いに平行をなす複数のゲートラインが形成され、前記複数のゲートラインの上層に前記複数のゲートラインの全体を覆うように成膜された非晶質シリコン膜に対して、連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール方法であって、複数の光源のそれぞれから、連続発振されるレーザ光を出射させ、複数の前記光源から出射されたそれぞれの前記レーザ光を、光学ヘッドで、収束するレーザビームとなるように加工して、それぞれの前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に順次、対応して投影させ、それぞれの前記レーザビームにおいて最も収束するスポット部が、前記改質予定領域の前記非晶質シリコン膜の膜内部に位置するように配置させ、前記光学ヘッドを、前記レーザビームが前記改質予定領域内を相対的にスキャンされるように移動させることを特徴とする。 In another aspect of the present invention, a plurality of gate lines parallel to each other are formed on the substrate, and an amorphous film is formed on the upper layer of the plurality of gate lines so as to cover the entire gate lines. This is a laser annealing method in which a silicon film is irradiated with a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film, and is continuously oscillated from each of a plurality of light sources. Laser light is emitted, and each of the laser light emitted from the plurality of light sources is processed by an optical head so as to be a convergent laser beam, and each laser beam is above the gate line. The spots that converge most in each of the laser beams are sequentially and correspondingly projected into the location of the planned modification region so as to be located inside the amorphous silicon film of the planned modification region. It is characterized in that it is arranged and the optical head is moved so that the laser beam is relatively scanned within the planned modification region.
　本発明の他の態様は、基板の上に互いに平行をなす複数のゲートラインが形成され、前記複数のゲートラインの上層に前記基板の全体を覆うように成膜された非晶質シリコン膜に対して、連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール方法であって、複数の光源のそれぞれから、連続発振されるレーザ光を出射させ、複数の前記光源から出射されたそれぞれの前記レーザ光を、光学ヘッドで、収束するレーザビームとなるように加工して、それぞれの前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に順次、対応して投影させ、それぞれの前記レーザビームにおいて最も収束するスポット部が、前記改質予定領域の前記非晶質シリコン膜の膜内部に位置するように配置させ、前記光学ヘッドを、前記レーザビームが前記改質予定領域を内包する所定の領域を相対的にスキャンされるように移動させることを特徴とする。 In another aspect of the present invention, a plurality of gate lines parallel to each other are formed on the substrate, and an amorphous silicon film formed on the upper layer of the plurality of gate lines so as to cover the entire substrate. On the other hand, it is a laser annealing method of irradiating a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film, and the laser beam continuously oscillated from each of a plurality of light sources. Is emitted, and each of the laser beams emitted from the plurality of light sources is processed by an optical head so as to be a convergent laser beam, and each of the laser beams is located above the gate line. The laser beams are sequentially and correspondingly projected into the planned modification region, and the spot portion that converges most in each of the laser beams is arranged so as to be located inside the amorphous silicon film of the planned modification region. The optical head is moved so that the laser beam relatively scans a predetermined region including the region to be modified.
　本発明の他の態様は、基板の上に互いに平行をなす複数のゲートラインが形成され、前記複数のゲートラインの上層に前記複数のゲートラインの全体を覆うように成膜された非晶質シリコン膜に対して、連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール方法であって、複数の光源のそれぞれから、連続発振されるレーザ光を出射させ、複数の前記光源から出射されたそれぞれの前記レーザ光を、光学ヘッドで、収束するレーザビームとなるように加工して、それぞれの前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に順次、対応して投影させ、それぞれの前記レーザビームにおいて焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域が、前記改質予定領域の前記非晶質シリコン膜の膜内部の領域に重なるように配置させ、前記光学ヘッドを、前記レーザビームが前記改質予定領域内を相対的にスキャンされるように移動させることを特徴とする。 In another aspect of the present invention, a plurality of gate lines parallel to each other are formed on the substrate, and an amorphous film is formed on the upper layer of the plurality of gate lines so as to cover the entire gate lines. This is a laser annealing method in which a silicon film is irradiated with a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film, and is continuously oscillated from each of a plurality of light sources. Laser light is emitted, and each of the laser light emitted from the plurality of light sources is processed by an optical head so as to be a convergent laser beam, and each laser beam is above the gate line. The region in which the beam profile maintains the top hat shape, including the focal point and the vicinity of the focal point, in each of the laser beams, which is sequentially and correspondingly projected into the positioned reformed planned region, is the acrystallized region of the reformed planned region. It is characterized in that it is arranged so as to overlap the region inside the quality silicon film, and the optical head is moved so that the laser beam is relatively scanned in the region to be modified.
　本発明の他の態様は、基板の上に互いに平行をなす複数のゲートラインが形成され、前記複数のゲートラインの上層に前記基板の全体を覆うように成膜された非晶質シリコン膜に対して、連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール方法であって、複数の光源のそれぞれから、連続発振されるレーザ光を出射させ、複数の前記光源から出射されたそれぞれの前記レーザ光を、光学ヘッドで、収束するレーザビームとなるように加工して、それぞれの前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に順次、対応して投影させ、それぞれの前記レーザビームにおいて焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域が、前記改質予定領域の前記非晶質シリコン膜の膜内部の領域に重なるように配置させ、前記光学ヘッドを、前記レーザビームが前記改質予定領域を内包する所定の領域を相対的にスキャンされるように移動させることを特徴とする。 In another aspect of the present invention, a plurality of gate lines parallel to each other are formed on the substrate, and an amorphous silicon film formed on the upper layer of the plurality of gate lines so as to cover the entire substrate. On the other hand, it is a laser annealing method of irradiating a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film, and the laser beam continuously oscillated from each of a plurality of light sources. Is emitted, and each of the laser beams emitted from the plurality of light sources is processed by an optical head so as to be a convergent laser beam, and each of the laser beams is located above the gate line. The region in which the beam profile maintains the top hat shape, including the focal point and the vicinity of the focal point in each of the laser beams, is the region of the planned reforming region, which is the amorphous silicon film. It is characterized in that the optical head is arranged so as to overlap the region inside the film, and the laser beam is moved so as to be relatively scanned in a predetermined region including the region to be modified.
　本発明に係るレーザアニール装置およびレーザアニール方法によれば、非晶質シリコン膜よりも下層に配置された、基板ならびにゲートラインなどを熱的損傷させることなく、改質予定領域の非晶質シリコン膜のみを効率的に結晶化させるという効果がある。 According to the laser annealing apparatus and the laser annealing method according to the present invention, the amorphous silicon in the region to be modified is not thermally damaged, such as the substrate and the gate line, which are arranged below the amorphous silicon film. It has the effect of efficiently crystallizing only the film.
図１は、本発明の第１の実施の形態に係るレーザアニール装置を用いたＴＦＴアレイの製造方法を示す断面説明図である。FIG. 1 is a cross-sectional explanatory view showing a method of manufacturing a TFT array using the laser annealing apparatus according to the first embodiment of the present invention. 図２は、本発明の第１の実施の形態に係るレーザアニール装置の概略を示す構成図である。FIG. 2 is a configuration diagram showing an outline of a laser annealing apparatus according to the first embodiment of the present invention. 図３は、本発明の第１の実施の形態に係るレーザアニール装置を用いたＴＦＴアレイの製造方法を示す平面説明図である。FIG. 3 is a plan explanatory view showing a method of manufacturing a TFT array using the laser annealing apparatus according to the first embodiment of the present invention. 図４－１は、本発明の第１の実施の形態に係るレーザアニール装置を用いたレーザアニール方法を示す平面説明図である。FIG. 4-1 is a plan explanatory view showing a laser annealing method using the laser annealing apparatus according to the first embodiment of the present invention. 図４－２は、本発明の第１の実施の形態に係るレーザアニール装置において光学ヘッドを回転させてビームピッチを変更した状態を示すＴＦＴアレイの製造方法を示す平面説明図である。FIG. 4-2 is a plan explanatory view showing a method of manufacturing a TFT array showing a state in which the optical head is rotated to change the beam pitch in the laser annealing apparatus according to the first embodiment of the present invention. 図５は、本発明の第２の実施の形態に係るレーザアニール装置の概略を示す構成図である。FIG. 5 is a configuration diagram showing an outline of a laser annealing apparatus according to a second embodiment of the present invention. 図６は、本発明の第３の実施の形態に係るレーザアニール装置の概略を示す構成図である。FIG. 6 is a configuration diagram showing an outline of a laser annealing apparatus according to a third embodiment of the present invention. 図７は、本発明の第４の実施の形態に係るレーザアニール装置の概略を示す構成図である。FIG. 7 is a configuration diagram showing an outline of a laser annealing apparatus according to a fourth embodiment of the present invention. 図８は、本発明の第４の実施の形態に係るレーザアニール装置の要部を示す側面図である。FIG. 8 is a side view showing a main part of the laser annealing apparatus according to the fourth embodiment of the present invention. 図９は、本発明の第５の実施の形態に係るレーザアニール装置の概略を示す構成図である。FIG. 9 is a configuration diagram showing an outline of a laser annealing apparatus according to a fifth embodiment of the present invention. 図１０は、本発明の第６の実施の形態に係るレーザアニール装置の概略を示す構成図である。FIG. 10 is a configuration diagram showing an outline of a laser annealing apparatus according to a sixth embodiment of the present invention. 図１１は、本発明の第６の実施の形態に係るレーザアニール装置における結像光学系の構成図である。FIG. 11 is a block diagram of an imaging optical system in the laser annealing apparatus according to the sixth embodiment of the present invention. 図１２は、本発明の第7の実施の形態に係るレーザアニール装置を示す概略構成図である。FIG. 12 is a schematic configuration diagram showing a laser annealing apparatus according to a seventh embodiment of the present invention. 図１３は、本発明の第８の実施の形態に係るレーザアニール装置におけるレーザビームの焦点および焦点近傍を含み、エネルギー密度のプロファイルがトップハット型を維持する領域Ａを示す説明図である。FIG. 13 is an explanatory view showing a region A including the focal point and the vicinity of the focal point of the laser beam in the laser annealing apparatus according to the eighth embodiment of the present invention, and the energy density profile maintains the top hat type. 図１４－１は、図１３における（４）の領域のレーザビームの半径方向の位置とパワー密度との関係を示す説明図である。FIG. 14-1 is an explanatory diagram showing the relationship between the radial position of the laser beam in the region (4) in FIG. 13 and the power density. 図１４－２は、図１３における（２）の領域のレーザビームの半径方向の位置とパワー密度との関係を示す説明図である。FIG. 14-2 is an explanatory diagram showing the relationship between the radial position of the laser beam in the region (2) in FIG. 13 and the power density. 図１４－３は、図１３における（１）の領域のレーザビームの半径方向の位置とパワー密度との関係を示す説明図である。FIG. 14-3 is an explanatory diagram showing the relationship between the radial position of the laser beam in the region (1) in FIG. 13 and the power density. 図１４－４は、図１３における（３）の領域のレーザビームの半径方向の位置とパワー密度との関係を示す説明図である。FIG. 14-4 is an explanatory diagram showing the relationship between the radial position of the laser beam in the region (3) in FIG. 13 and the power density. 図１４－５は、図１３における（５）の領域のレーザビームの半径方向の位置とパワー密度との関係を示す説明図である。14-5 is an explanatory diagram showing the relationship between the radial position of the laser beam in the region (5) in FIG. 13 and the power density.
　以下に、本発明の実施の形態に係るレーザアニール装置およびレーザアニール方法の詳細を図面に基づいて説明する。但し、図面は模式的なものであり、各部材の数、各部材の寸法、寸法の比率、形状などは現実のものと異なることに留意すべきである。また、図面相互間においても互いの寸法の関係や比率や形状が異なる部分が含まれている。 The details of the laser annealing apparatus and the laser annealing method according to the embodiment of the present invention will be described below with reference to the drawings. However, it should be noted that the drawings are schematic, and the number of each member, the dimensions of each member, the ratio of dimensions, the shape, etc. are different from the actual ones. Further, even between the drawings, there are parts having different dimensional relationships, ratios and shapes.
［第１の実施の形態］
（レーザアニール装置の構成）
　図１および図２に示すように、本実施の形態に係るレーザアニール装置１は、光源ユニット２と、光学ヘッド３と、基板１０を搬送する図示しない基板搬送手段と、図示しない変位計と、を備えている。 [First Embodiment]
(Construction of laser annealing device)
As shown in FIGS. 1 and 2, the laser annealing device 1 according to the present embodiment includes a light source unit 2, an optical head 3, a substrate transfer means (not shown) for transporting the substrate 10, and a displacement meter (not shown). Is equipped with.
　光源ユニット２は、連続発振レーザ光（ＣＷレーザ光）を発振する光源としての複数の半導体レーザＬＤ（ＬＤ１～ＬＤｎ）を備えている。ここで、連続発振レーザ光（ＣＷレーザ光）とは、目的領域に対して連続してレーザ光を照射する所謂疑似連続発振も含む概念である。つまり、レーザ光がパルスレーザであっても、パルス間隔が加熱後のシリコン薄膜（非晶質シリコン膜）の冷却時間よりも短い（固まる前に次のパルスで照射する）疑似連続発振レーザであってもよい。レーザ光源としては、半導体レーザ、固体レーザ、液体レーザ、気体レーザなどの各種のレーザを用いることが可能である。 The light source unit 2 includes a plurality of semiconductor laser LDs (LD1 to LDn) as a light source for oscillating continuously oscillating laser light (CW laser light). Here, the continuously oscillating laser light (CW laser light) is a concept including so-called pseudo continuous oscillation that continuously irradiates the target region with the laser light. In other words, even if the laser beam is a pulse laser, the pulse interval is shorter than the cooling time of the silicon thin film (amorphous silicon film) after heating (irradiate with the next pulse before solidifying). You may. As the laser light source, various lasers such as a semiconductor laser, a solid-state laser, a liquid laser, and a gas laser can be used.
　なお、本実施の形態では、半導体レーザＬＤの予備Ｒとして、例えば、半導体レーザＬＤ１００～ＬＤｎを備えている。 In the present embodiment, for example, the semiconductor lasers LD100 to LDn are provided as the spare R of the semiconductor laser LD.
　光源ユニット２は、上記の複数の半導体レーザＬＤと、ドライブ回路２０と、複数のカップリングレンズ２１と、を備えている。ドライブ回路２０は、複数の半導体レーザＬＤのそれぞれに接続されており、それぞれの半導体レーザＬＤを駆動する。 The light source unit 2 includes the above-mentioned plurality of semiconductor laser LDs, a drive circuit 20, and a plurality of coupling lenses 21. The drive circuit 20 is connected to each of the plurality of semiconductor laser LDs and drives each of the semiconductor laser LDs.
　カップリングレンズ２１は、それぞれの半導体レーザＬＤの出射側に接続されている。
それぞれのカップリングレンズ２１には、導波路としての光ファイバ２２の一端部が接続されている。本実施の形態では、光ファイバ２２としてマルチモードファイバを適用している。 The coupling lens 21 is connected to the emission side of each semiconductor laser LD.
One end of an optical fiber 22 as a waveguide is connected to each coupling lens 21. In this embodiment, a multimode fiber is applied as the optical fiber 22.
　光学ヘッド３は、ファイバアレイ３１と、結像光学系３２と、を備える。ファイバアレイ３１は、光ファイバ２２の他端部が接続されている。本実施の形態では、ファイバアレイ３１に接続された光ファイバ２２の出射端は、ファイバアレイ３１の出射側端面において、一つの直線上に沿って一列に並ぶように配置されている。 The optical head 3 includes a fiber array 31 and an imaging optical system 32. The other end of the optical fiber 22 is connected to the fiber array 31. In the present embodiment, the exit ends of the optical fibers 22 connected to the fiber array 31 are arranged in a line along one straight line on the exit side end surface of the fiber array 31.
　結像光学系３２は、少なくとも入射側の第１レンズ３３と、出射側の第２レンズ３４と、を備えている。図２に示すように、結像光学系３２は、ファイバアレイ３１から出射されたレーザ光が入射される。図１に示すように、光学ヘッド３では、レーザ光を下流側（後側）へ向けてスポット部Ｆで収束するレーザビームＬＢｃｗとなるように加工する。本実施の形態では、図４－１に示すように、光学ヘッド３の出射側において、レーザビームＬＢｃｗは、一直線の上に沿ってピッチＰ１で配置された位置から出射される。このピッチＰ１は、後述するゲートライン１２のピッチと同一に設定されている。なお、この実施の形態では、レーザビームＬＢｃｗの並ぶ方向が後述するゲートライン１２の延びる方向と直角をなすように設定されている。 The imaging optical system 32 includes at least a first lens 33 on the incident side and a second lens 34 on the exit side. As shown in FIG. 2, the imaging optical system 32 receives the laser light emitted from the fiber array 31. As shown in FIG. 1, the optical head 3 is processed so as to form a laser beam LBcw in which the laser beam is directed to the downstream side (rear side) and converges at the spot portion F. In the present embodiment, as shown in FIG. 4-1 on the exit side of the optical head 3, the laser beam LBcw is emitted from a position arranged at a pitch P1 along a straight line. This pitch P1 is set to be the same as the pitch of the gate line 12 described later. In this embodiment, the direction in which the laser beams LBcw are lined up is set to be perpendicular to the extending direction of the gate line 12, which will be described later.
　なお、光学ヘッド３の側方には図示しない、光学ヘッド３と基板１０との位置ずれを補正する変位計が設けられている。この変位計で検出した光学ヘッド３と基板１０との位置ずれ量のデータに基づいて、光学ヘッド３から出射されるレーザビームＬＢｃｗのピント調整を自動で行えるオートフォーカスの機能を備える。なお、本実施の形態では、オートフォーカスの手段として変位計を用いたが、これには限定されず、様々な公知の技術を用いることができる。 A displacement meter (not shown) for correcting the positional deviation between the optical head 3 and the substrate 10 is provided on the side of the optical head 3. It has an autofocus function that can automatically adjust the focus of the laser beam LBcw emitted from the optical head 3 based on the data of the amount of misalignment between the optical head 3 and the substrate 10 detected by the displacement meter. In the present embodiment, a displacement meter is used as a means of autofocus, but the present invention is not limited to this, and various known techniques can be used.
　なお、本実施の形態において、レーザビームＬＢｃｗは、トップハット型形状の特性を持ち、光軸に直交する方向の断面形状が正方形である。なお、レーザビームＬＢｃｗの断面形状は、長方形、六角形などであってもよい。レーザビームＬＢｃｗの断面形状をこのような形状にするには、光ファイバ２２のコアの断面形状を、正方形、長方形、六角形などに設定すればよい。 In the present embodiment, the laser beam LBcw has the characteristics of a top hat shape, and the cross-sectional shape in the direction orthogonal to the optical axis is square. The cross-sectional shape of the laser beam LBcw may be rectangular, hexagonal, or the like. In order to make the cross-sectional shape of the laser beam LBcw such a shape, the cross-sectional shape of the core of the optical fiber 22 may be set to a square, a rectangle, a hexagon, or the like.
　図示しない基板搬送手段は、レーザアニール処理を施す基板１０をスキャン方向へ任意の速度で搬送する機構を備える。したがって、光学ヘッド３の位置を固定した状態で基板１０側を搬送することによって、基板１０に対してレーザビームＬＢｃｗを相対的にスキャンするようになっている。 The substrate transporting means (not shown) includes a mechanism for transporting the substrate 10 to be subjected to the laser annealing treatment in the scanning direction at an arbitrary speed. Therefore, the laser beam LBcw is scanned relative to the substrate 10 by transporting the substrate 10 side with the position of the optical head 3 fixed.
　図１に示すように、被レーザアニール処理基板としての基板１０は、ガラス基板１１を本体とする。このガラス基板１１の上には、銅（Ｃｕ）でパターン形成された複数のゲートライン１２およびその他の金属配線パターン、シリコン窒化膜（Ｓｉ３Ｎ４）１３、シリコン酸化膜（ＳｉＯ２）１４、被レーザアニール処理膜としての非晶質シリコン膜１５ａなどが順次積層されている。複数のゲートライン１２は、互いに平行をなすように配置されている。上述したように、ゲートライン１２同士のピッチは、ピッチＰ１に設定されている。 As shown in FIG. 1, the substrate 10 as the laser-annealed substrate has the glass substrate 11 as the main body. On the glass substrate 11, a plurality of gate lines 12 and other metal wiring patterns formed of copper (Cu), a silicon nitride film (Si3N4) 13, a silicon oxide film (SiO2) 14, and a laser annealing treatment are performed. Amorphous silicon film 15a or the like as a film is sequentially laminated. The plurality of gate lines 12 are arranged so as to be parallel to each other. As described above, the pitch between the gate lines 12 is set to the pitch P1.
　ゲートライン１２は、図示しない画素領域毎に形成されるＴＦＴのゲート電極となる部分を含む。因みに、一例として、ゲートライン１２の厚さ寸法は２００～７００ｎｍ、シリコン窒化膜１３の厚さ寸法は３００ｎｍ程度、シリコン酸化膜１４の厚さ寸法は５０～１００ｎｍ、非晶質シリコン膜１５ａの厚さ寸法は５０ｎｍ程度を挙げることができる。 The gate line 12 includes a portion serving as a gate electrode of the TFT formed for each pixel region (not shown). Incidentally, as an example, the thickness dimension of the gate line 12 is 200 to 700 nm, the thickness dimension of the silicon nitride film 13 is about 300 nm, the thickness dimension of the silicon oxide film 14 is 50 to 100 nm, and the thickness of the amorphous silicon film 15a. The dimensions can be about 50 nm.
　本実施の形態では、非晶質シリコン膜１５ａの表面に照射されるレーザビームＬＢｃｗのビーム径寸法は、例えば、５μｍ以上３００μｍ以内の任意の寸法に設定されている。
なお、このビーム径寸法の範囲は、レーザビームＬＢｃｗの照射面がＴＦＴの半導体活性領域（改質予定領域）に収容され得る大きさである。なお、このレーザビームＬＢｃｗの照射面の径寸法は、１０μｍ以上１００μｍ以内であることが好ましい。 In the present embodiment, the beam diameter dimension of the laser beam LBcw irradiated on the surface of the amorphous silicon film 15a is set to, for example, an arbitrary dimension of 5 μm or more and 300 μm or less.
The range of the beam diameter dimension is such that the irradiation surface of the laser beam LBcw can be accommodated in the semiconductor active region (planned modification region) of the TFT. The diameter of the irradiation surface of the laser beam LBcw is preferably 10 μm or more and 100 μm or less.
　本実施の形態においては、レーザビームＬＢｃｗが非晶質シリコン膜１５ａに対して、相対的にスキャンされるスキャン速度は、２００ｍｍ～５００ｍｍ／秒であることが好ましいが、これに限定されるものではない。 In the present embodiment, the scanning speed at which the laser beam LBcw is scanned relative to the amorphous silicon film 15a is preferably 200 mm to 500 mm / sec, but is not limited thereto. Absent.
　図３に示すように、上述した条件でレーザビームＬＢｃｗを非晶質シリコン膜１５ａにおける改質予定領域内をゲートライン１２の延びる方向に沿って照射することにより、非晶質シリコン膜１５ａを部分的に疑似単結晶シリコン膜１５Ｌａに改質することができる。なお、疑似単結晶シリコン膜１５Ｌａが形成された領域は、改質予定領域と一致する。 As shown in FIG. 3, the amorphous silicon film 15a is partially formed by irradiating the laser beam LBcw in the planned modification region of the amorphous silicon film 15a along the extending direction of the gate line 12 under the above-mentioned conditions. It can be modified into a pseudo-single crystal silicon film 15La. The region where the pseudo single crystal silicon film 15La is formed coincides with the region to be modified.
　本実施の形態に係るレーザアニール装置１によれば、レーザビームＬＢｃｗにおけるパワー密度の高いスポット部Ｆが非晶質シリコン膜１５ａの膜内部に位置するため、非晶質シリコン膜１５ａに重点的に大きな熱量が供給される。そして、スポット部Ｆから大部分の熱が側方（図１における矢印ｈ方向）に向けて非晶質シリコン膜１５ａ内を伝達される。スポット部Ｆの後側（下側）では、ビームが拡散するため、下地のシリコン酸化膜１４等に到達する光のパワー密度が低くなり、非晶質シリコン膜１５ａの下層側を過熱することを抑制できる。このため、本実施の形態に係るレーザアニール装置１によれば、ゲートライン１２やその他の配線パターンやガラス基板１１などが過熱により損傷されることを回避できる。 According to the laser annealing apparatus 1 according to the present embodiment, since the spot portion F having a high power density in the laser beam LBcw is located inside the amorphous silicon film 15a, the focus is on the amorphous silicon film 15a. A large amount of heat is supplied. Then, most of the heat is transferred from the spot portion F toward the side (direction of arrow h in FIG. 1) in the amorphous silicon film 15a. Since the beam is diffused on the rear side (lower side) of the spot portion F, the power density of the light reaching the underlying silicon oxide film 14 or the like becomes low, and the lower layer side of the amorphous silicon film 15a is overheated. Can be suppressed. Therefore, according to the laser annealing device 1 according to the present embodiment, it is possible to prevent the gate line 12, other wiring patterns, the glass substrate 11, and the like from being damaged by overheating.
　本実施の形態に係るレーザアニール装置１によれば、非晶質シリコン膜１５ａを全てのゲートライン１２の全体を覆うように成膜した状態でも、ゲートライン１２やその他の配線やガラス基板１１にダメージが発生することがない。 According to the laser annealing apparatus 1 according to the present embodiment, even in a state where the amorphous silicon film 15a is formed so as to cover the entire gate line 12, the gate line 12 and other wiring and the glass substrate 11 are covered. No damage occurs.
　また、本実施の形態に係るレーザアニール装置１によれば、ＴＦＴのチャネル半導体層とすべき改質予定領域のみにレーザビームＬＢｃｗを照射すればよいため、エネルギー効率を高めることができる。 Further, according to the laser annealing apparatus 1 according to the present embodiment, since it is sufficient to irradiate only the region to be modified to be the channel semiconductor layer of the TFT with the laser beam LBcw, the energy efficiency can be improved.
　なお、上記スポット部Ｆは、パワー密度がトップハット型形状の特性を維持する範囲として、光軸方向に有限の幅（余裕）を持っても構わない。このような範囲内であれば均一なアニール処理が可能であり、非晶質シリコン膜１５ａにエネルギーが集中する状態が維持されるからである。スポット部Ｆにおけるパワー密度がトップハット型形状の特性を維持する範囲については、第８の実施の形態において後述する。 Note that the spot portion F may have a finite width (margin) in the optical axis direction as a range in which the power density maintains the characteristics of the top hat shape. This is because a uniform annealing treatment can be performed within such a range, and a state in which energy is concentrated on the amorphous silicon film 15a is maintained. The range in which the power density in the spot portion F maintains the characteristics of the top hat shape will be described later in the eighth embodiment.
　また、本発明においては、レーザビームＬＢｃｗのビーム径は、トップハット型形状の平坦部の径寸法として考えることができる。これは、改質予定領域に均一なアニール処理を施すことができればよく、レーザビームＬＢｃｗにおけるトップハット型形状の平坦部の外側ではパワー密度が急激に減少するため、熱的損傷の回避とエネルギー利用効率の改善とを両立することが可能となるからである。 Further, in the present invention, the beam diameter of the laser beam LBcw can be considered as the diameter dimension of the flat portion of the top hat type shape. This is because it is sufficient if the planned reforming region can be uniformly annealed, and the power density decreases sharply outside the flat portion of the top hat shape in the laser beam LBcw, so that thermal damage is avoided and energy is used. This is because it is possible to achieve both improvement in efficiency.
　さらに、基板全面に非晶質シリコン膜１５ａが形成されていて、かつ、ビーム径（照射領域の幅）がゲートライン間の距離よりも十分小さい場合であれば、ビーム径が改質予定領域より大きくても構わない。熱の発生は非晶質シリコン１５ａに集中し、従来のようなラインビームでのアニール処理に比べてエネルギー利用効率が大きく改善されるからである。ここで、ビーム径がゲートライン間の距離より十分小さいとは、例えば、ビーム径がゲートライン間の距離の１／１０以下である。このような条件において、レーザビームＬＢｃｗの照射領域がゲートラインの幅方向にはみ出した場合の照射領域が、本発明における、改質予定領域を内包する所定の領域と定義する。 Further, if the amorphous silicon film 15a is formed on the entire surface of the substrate and the beam diameter (width of the irradiation region) is sufficiently smaller than the distance between the gate lines, the beam diameter is smaller than the planned modification region. It doesn't matter if it's big. This is because the heat generation is concentrated on the amorphous silicon 15a, and the energy utilization efficiency is greatly improved as compared with the conventional annealing treatment with a line beam. Here, when the beam diameter is sufficiently smaller than the distance between the gate lines, for example, the beam diameter is 1/10 or less of the distance between the gate lines. Under such conditions, the irradiation region when the irradiation region of the laser beam LBcw protrudes in the width direction of the gate line is defined as a predetermined region including the region to be modified in the present invention.
［第１の実施の形態の変形例］
　図４－２は、本発明の第１の実施の形態に係るレーザアニール装置１の変形例の光学ヘッド３を示す。この変形例では、光学ヘッド３が図示しない回転駆動部により回転可能に駆動されるように設定されている。なお、この変形例における光学ヘッド３の基本的な構成は、上記第１の実施の形態と同様である。 [Modified example of the first embodiment]
FIG. 4-2 shows an optical head 3 of a modified example of the laser annealing device 1 according to the first embodiment of the present invention. In this modification, the optical head 3 is set to be rotatably driven by a rotary drive unit (not shown). The basic configuration of the optical head 3 in this modification is the same as that of the first embodiment.
　この変形例では、ゲートライン１２同士のピッチＰ２が図４－１に示すゲートライン１２のピッチＰ１より短い場合に適用できる。図４－２に示すように、複数のゲートライン１２にレーザビームＬＢｃｗが対応するように光学ヘッド３を回転調整することにより、ゲートライン１２の上方の非晶質シリコン膜１５ａの改質予定領域に的確にレーザビームＬＢｃｗを照射することが可能となる。なお、図４－２に示すように斜めに回転移動させた光学ヘッド３を基板１０に対して相対的にスキャンした場合、適正な改質予定領域にレーザビームＬＢｃｗが照射されるタイミングは、ゲートライン１２毎に順次ずれるため、ドライブ回路２０で半導体レーザＬＤへの出力タイミングを順次遅延させるように設定すればよい。 In this modified example, it can be applied when the pitch P2 between the gate lines 12 is shorter than the pitch P1 of the gate line 12 shown in FIG. 4-1. As shown in FIG. 4-2, the region to be modified of the amorphous silicon film 15a above the gate line 12 is planned to be modified by rotating and adjusting the optical head 3 so that the laser beam LBcw corresponds to the plurality of gate lines 12. It is possible to accurately irradiate the laser beam LBcw. When the optical head 3 rotated and moved diagonally as shown in FIG. 4-2 is scanned relative to the substrate 10, the timing at which the laser beam LBcw is irradiated to the appropriate modification planned region is the gate. Since the lines 12 are sequentially shifted, the drive circuit 20 may be set to sequentially delay the output timing to the semiconductor laser LD.
　この変形例によれば、レーザビームＬＢｃｗが照射される列同士のピッチを光学ヘッド３の回転により変えることができる。したがって、基板におけるゲートライン１２のピッチが変更された場合にも適用できるレーザアニール装置を実現できる。 According to this modification, the pitch between the rows irradiated with the laser beam LBcw can be changed by the rotation of the optical head 3. Therefore, it is possible to realize a laser annealing device that can be applied even when the pitch of the gate line 12 on the substrate is changed.
［レーザアニール方法］
　次に、本実施の形態に係るレーザアニール方法について説明する。レーザアニール方法は、レーザアニール装置１を用いて基板１０における改質予定領域に疑似単結晶シリコン膜１５Ｌａを形成するためのレーザアニール処理方法である。 [Laser annealing method]
Next, the laser annealing method according to the present embodiment will be described. The laser annealing method is a laser annealing treatment method for forming a pseudo single crystal silicon film 15La in a region to be modified on the substrate 10 by using the laser annealing apparatus 1.
　まず、このレーザアニール方法では、図１に示すように、ガラス基板１１の上に互いに平行をなす複数のゲートライン１２が形成され、複数のゲートライン１２の上層にこれらゲートライン１２の全体を覆うように非晶質シリコン膜１５ａが成膜された基板１０を用意する。 First, in this laser annealing method, as shown in FIG. 1, a plurality of gate lines 12 parallel to each other are formed on the glass substrate 11, and the entire gate lines 12 are covered on the upper layers of the plurality of gate lines 12. As described above, the substrate 10 on which the amorphous silicon film 15a is formed is prepared.
　次に、基板１０を図示しない基板搬送手段に基板１０をセットし、半導体レーザＬＤのそれぞれから、連続発振されるレーザ光を出射させ、レーザ光を光学ヘッド３で、収束するレーザビームＬＢｃｗとなるように加工して、それぞれのレーザビームＬＢｃｗをゲートライン１２の上方に位置する図示しない改質予定領域内に順次、対応するように投影する。 Next, the substrate 10 is set in a substrate transport means (not shown), continuously oscillating laser light is emitted from each of the semiconductor laser LDs, and the laser beam is converged by the optical head 3 to become a laser beam LBcw. Each laser beam LBcw is sequentially projected into a region to be modified (not shown) located above the gate line 12 so as to correspond to the processing.
　このとき、レーザビームＬＢｃｗにおいて最も収束するスポット部Ｆを、改質予定領域の非晶質シリコン膜１５ａの膜内部に位置するように配置する。 At this time, the spot portion F that converges most in the laser beam LBcw is arranged so as to be located inside the amorphous silicon film 15a in the planned modification region.
　そして、図示しない基板搬送手段で基板１０を移動させて、レーザビームＬＢｃｗが改質予定領域内をゲートライン１２が延びる方向に沿って、相対的にスキャンさせる。この結果、ＴＦＴのチャネル半導体層となるべき領域を疑似単結晶シリコン膜１５Ｌａに改質できる。 Then, the substrate 10 is moved by a substrate transport means (not shown) so that the laser beam LBcw relatively scans the inside of the planned modification region along the direction in which the gate line 12 extends. As a result, the region to be the channel semiconductor layer of the TFT can be modified into a pseudo single crystal silicon film 15La.
　本実施の形態のレーザアニール方法では、ＴＦＴのチャネル半導体層を形成すべき領域だけに疑似単結晶シリコン膜１５Ｌａを形成できるため、エネルギー効率のよいアニールを行うことができる。このため、このレーザアニール方法では、大幅な低コスト化を実現できる。因みに、エキシマレーザによるラインビームを用いた従来のアニール方法では、非晶質シリコン膜全体の領域をラインビームで塗りつぶすようにレーザ照射して結晶化させるため、非晶質シリコン膜への照射領域に継ぎ目が発生していた。このため、この継ぎ目領域でのチャネル半導体層と、それ以外の領域でのチャネル半導体層とでは、移動度が異なりＴＦＴ基板全体のチャネル半導体層で移動度にばらつきがであった。これに対して、本実施の形態のレーザアニール方法では、照射領域の継ぎ目が発生しないため、チャネル半導体層の移動度を均一にすることができる。 In the laser annealing method of the present embodiment, since the pseudo single crystal silicon film 15La can be formed only in the region where the channel semiconductor layer of the TFT should be formed, energy-efficient annealing can be performed. Therefore, this laser annealing method can realize a significant cost reduction. By the way, in the conventional annealing method using a line beam with an excimer laser, the area of the entire amorphous silicon film is irradiated with the laser so as to fill the area with the line beam to crystallize the area. There was a seam. Therefore, the mobility of the channel semiconductor layer in the seam region and the channel semiconductor layer in the other regions are different, and the mobility of the channel semiconductor layer of the entire TFT substrate varies. On the other hand, in the laser annealing method of the present embodiment, since the seam of the irradiation region does not occur, the mobility of the channel semiconductor layer can be made uniform.
　また、本実施の形態のレーザアニール方法では、ゲートライン１２やガラス基板１１などを熱的に損傷させることがないため、歩留まりの高いＴＦＴ基板の製造を実現することができる。 Further, in the laser annealing method of the present embodiment, since the gate line 12 and the glass substrate 11 are not thermally damaged, it is possible to realize the production of a TFT substrate having a high yield.
［第２の実施の形態］
　図５は、本発明の第２の実施の形態に係るレーザアニール装置１Ａを示す概略構成図である。 [Second Embodiment]
FIG. 5 is a schematic configuration diagram showing a laser annealing device 1A according to a second embodiment of the present invention.
　本実施の形態では、複数のレーザビームＬＢｃｗのそれぞれの光量を検出する光量センサＤ１を備えることを特徴とする。本実施の形態における他の構成は、上記第１の実施の形態に係るレーザアニール装置１と同様であるため、説明を省略する。 The present embodiment is characterized by including a light amount sensor D1 that detects the light amount of each of the plurality of laser beams LBcw. Since the other configurations in the present embodiment are the same as those in the laser annealing apparatus 1 according to the first embodiment, the description thereof will be omitted.
　光量センサＤ１は、光学ヘッド３の後方に配置され、レーザビームＬＢｃｗのスポット部Ｆに順次移動できるようになっている。また、この光量センサＤ１は、１つレーザビームＬＢｃｗの光量を検出するときに、隣接するレーザビームＬＢｃｗが入射しないように設定されている。 The light amount sensor D1 is arranged behind the optical head 3 and can be sequentially moved to the spot portion F of the laser beam LBcw. Further, the light amount sensor D1 is set so that the adjacent laser beam LBcw does not enter when detecting the light amount of one laser beam LBcw.
　本実施の形態では、光量センサＤ１で検出したデータは、ドライブ回路２０へフィードバックされ、当該レーザビームＬＢｃｗの光源としての半導体レーザＬＤの出力調整を行うようになっている。 In the present embodiment, the data detected by the light amount sensor D1 is fed back to the drive circuit 20, and the output of the semiconductor laser LD as the light source of the laser beam LBcw is adjusted.
　本実施の形態では、レーザアニール処理を行う前に、それぞれのレーザビームＬＢｃｗの光量調整を行って、これらレーザビームＬＢｃｗの出力(光量)の均一化を図ることができる。このため、本実施の形態に係るレーザアニール装置１Ａによれば、ＴＦＴ同士のチャネル半導体層の電気的特性の均一化を図ることができる。 In the present embodiment, the light amount of each laser beam LBcw can be adjusted before the laser annealing process is performed to make the output (light amount) of these laser beam LBcw uniform. Therefore, according to the laser annealing device 1A according to the present embodiment, it is possible to make the electrical characteristics of the channel semiconductor layers of the TFTs uniform.
［第３の実施の形態］
　図６は、本発明の第３の実施の形態に係るレーザアニール装置１Ｂの概略構成図である。本実施の形態に係るレーザアニール装置１Ｂは、結像光学系３２Ｂ内の光路にビームスプリッタ３５を備え、ビームスプリッタ３５の側方に側方レンズ３６および光量センサＤ２が配置されている。本実施の形態では、ビームスプリッタ３５で反射されたレーザビームＬＢｃｗが側方レンズ３６を通して光量センサＤ２に入射されるように設定されている。本実施の形態に係るレーザアニール装置１Ｂの他の構成は、上記第１の実施の形態と同様である。 [Third Embodiment]
FIG. 6 is a schematic configuration diagram of the laser annealing device 1B according to the third embodiment of the present invention. The laser annealing apparatus 1B according to the present embodiment includes a beam splitter 35 in the optical path in the imaging optical system 32B, and a side lens 36 and a light amount sensor D2 are arranged on the side of the beam splitter 35. In the present embodiment, the laser beam LBcw reflected by the beam splitter 35 is set to be incident on the light amount sensor D2 through the side lens 36. The other configuration of the laser annealing device 1B according to the present embodiment is the same as that of the first embodiment.
　本実施の形態では、光量センサＤ２で検出されたデータは、ドライブ回路２０へフィードバックされ、当該レーザビームＬＢｃｗの光源としての半導体レーザＬＤの出力調整を行うようになっている。本実施の形態では、レーザアニール装置１Ｂを運転しながら、各半導体レーザＬＤの出力調整を行うことができる。 In the present embodiment, the data detected by the light amount sensor D2 is fed back to the drive circuit 20, and the output of the semiconductor laser LD as the light source of the laser beam LBcw is adjusted. In the present embodiment, the output of each semiconductor laser LD can be adjusted while operating the laser annealing device 1B.
［第４の実施の形態］
　図７は、本発明の第４の実施の形態に係るレーザアニール装置１Ｃを示す概略構成図、図８はレーザアニール装置１Ｃの要部側面図である。本実施の形態に係るレーザアニール装置１Ｃは、ファイバアレイ３１から出射されたレーザ光を、第１レンズ３３を通して例えば、ガルバノミラーなどのスキャンミラーＳＭで下方(側方)へ向けて反射させる。スキャンミラーＳＭで反射されたレーザビームＬＢｃｗは、下方に配置された第２レンズ３４を通して基板側へ照射される。図８に示すように、スキャンミラーＳＭは、傾斜度合いを変更可能にするために、矢印Ａ方向に回転調整可能に設定されている。 [Fourth Embodiment]
FIG. 7 is a schematic configuration diagram showing the laser annealing device 1C according to the fourth embodiment of the present invention, and FIG. 8 is a side view of a main part of the laser annealing device 1C. The laser annealing device 1C according to the present embodiment reflects the laser light emitted from the fiber array 31 downward (sideways) through the first lens 33 by, for example, a scan mirror SM such as a galvano mirror. The laser beam LBcw reflected by the scan mirror SM is irradiated to the substrate side through the second lens 34 arranged below. As shown in FIG. 8, the scan mirror SM is set to be rotatable in the direction of arrow A in order to make the degree of inclination changeable.
　本実施の形態によれば、装置の高さ寸法を短くして、装置をコンパクトにすることができる。また、スキャンミラーＳＭを回転調整することにより、レーザビームＬＢｃｗの照射位置や、非晶質シリコン膜１５ａ表面からの膜厚方向におけるスポット部Ｆの深さ位置を調整することが可能となる。 According to this embodiment, the height dimension of the device can be shortened to make the device compact. Further, by adjusting the rotation of the scan mirror SM, it is possible to adjust the irradiation position of the laser beam LBcw and the depth position of the spot portion F in the film thickness direction from the surface of the amorphous silicon film 15a.
［第５の実施の形態］
　図９は、本発明の第５の実施の形態に係るレーザアニール装置１Ｄの概略構成図である。この実施の形態は、上記第２の実施の形態に係るレーザアニール装置１Ａの結像光学系３２における瞳位置に開口３７Ａを有するマスク３７を配置して構成した結像光学系３２Ｄを備える。本実施の形態に係るレーザアニール装置１Ｄの他の構成は、上記第２の実施の形態に係るレーザアニール装置１Ａと同様である。 [Fifth Embodiment]
FIG. 9 is a schematic configuration diagram of the laser annealing device 1D according to the fifth embodiment of the present invention. This embodiment includes an imaging optical system 32D configured by arranging a mask 37 having an opening 37A at the pupil position in the imaging optical system 32 of the laser annealing apparatus 1A according to the second embodiment. Other configurations of the laser annealing device 1D according to the present embodiment are the same as those of the laser annealing device 1A according to the second embodiment.
　本実施の形態によれば、マスク３７によって、結像光学系３２Ｄを通過するレーザビームＬＢｃｗのパターンを変更することができる。本実施の形態においても、光量センサＤ１を備えるため、パターンを変更したレーザビームＬＢｃｗのそれぞれの光量を光量センサＤ１で検出することできる。 According to the present embodiment, the pattern of the laser beam LBcw passing through the imaging optical system 32D can be changed by the mask 37. Also in the present embodiment, since the light amount sensor D1 is provided, each light amount of the laser beam LBcw whose pattern is changed can be detected by the light amount sensor D1.
［第６の実施の形態］
　図１０は、本発明の第６の実施の形態に係るレーザアニール装置１Ｅの概略構成図である。図１１は、レーザアニール装置１Ｅにおける結像光学系３８の概略構成図である。 [Sixth Embodiment]
FIG. 10 is a schematic configuration diagram of the laser annealing device 1E according to the sixth embodiment of the present invention. FIG. 11 is a schematic configuration diagram of the imaging optical system 38 in the laser annealing apparatus 1E.
　図１０に示すように、本実施の形態に係るレーザアニール装置１Ｅは、第１の実施の形態と同様に、光学ヘッド３として、ファイバアレイ３１と、結像光学系３８と、を備える。ファイバアレイ３１は、光ファイバ２２の他端部が接続されている。光ファイバ２２の出射端は、ファイバアレイ３１の出射側端面において、一つの直線上に沿って一列に並ぶように配置されている。 As shown in FIG. 10, the laser annealing device 1E according to the present embodiment includes a fiber array 31 and an imaging optical system 38 as the optical head 3 as in the first embodiment. The other end of the optical fiber 22 is connected to the fiber array 31. The exit ends of the optical fiber 22 are arranged in a row along one straight line on the exit side end surface of the fiber array 31.
　本実施の形態では、結像光学系３８は、テレセントリック光学系で構成されている。また、ファイバアレイ３１は、アクチュエータ３９によって光軸方向に沿って変位されるようになっている。本実施の形態では、レーザアニール装置１Ｅのオートフォーカス時に、アクチュエータ３９でファイバアレイ３１のみを光軸に沿って移動させるようになっている。このとき、光源ユニット２および結像光学系３８は、移動しないようになっている。 In the present embodiment, the imaging optical system 38 is composed of a telecentric optical system. Further, the fiber array 31 is displaced by the actuator 39 along the optical axis direction. In the present embodiment, when the laser annealing device 1E is autofocused, only the fiber array 31 is moved along the optical axis by the actuator 39. At this time, the light source unit 2 and the imaging optical system 38 do not move.
　図１１に示すように、本実施の形態において、結像光学系３８は、光軸方向に沿って順次配置された複数のレンズなどの光学部材Ｌ１～Ｌ１４でテレセントリック光学系を構成している。このようなテレセントリック光学系でなる結像光学系３８によれば、基板１０に対してピント合わせを行う際に、アクチュエータ３９が軽量なファイバアレイ３１のみを移動させればよいため、迅速な応答性を有するオートフォーカス性能を得ることができる。 As shown in FIG. 11, in the present embodiment, the imaging optical system 38 is composed of optical members L1 to L14 such as a plurality of lenses sequentially arranged along the optical axis direction to form a telecentric optical system. According to the imaging optical system 38 made of such a telecentric optical system, when focusing on the substrate 10, only the lightweight fiber array 31 needs to be moved by the actuator 39, so that quick response is achieved. It is possible to obtain the autofocus performance having the above.
　また、結像光学系３８は、テレセントリック光学系でなるため、基板１０に対して像のずれがなく、基板１０表面における複数のレーザビームＬＢｃｗの照射位置のピッチが変わらないという利点がある。 Further, since the imaging optical system 38 is a telecentric optical system, there is an advantage that the image does not shift with respect to the substrate 10 and the pitch of the irradiation positions of the plurality of laser beams LBcw on the surface of the substrate 10 does not change.
　なお、アクチュエータ３９としては、ピエゾ圧電効果を応用した位置決め素子であるピエゾアクチュエータを適用することができる。ピエゾアクチュエータは、ナノメータ程度の極めて微小な範囲から数百ミクロンメータまでの位置決めを正確に行うことができる。
また、ピエゾアクチュエータは、セラミックで形成されているため非常に硬く、大きな力を生み出すことができる。また、ピエゾアクチュエータは、コンパクトで省エネルギーな駆動を行うことができる。なお、本実施の形態では、アクチュエータ３９として、ピエゾアクチュエータを適用したが、リニアモータなどの他の駆動手段を適用することも勿論可能である。 As the actuator 39, a piezo actuator, which is a positioning element to which the piezo piezoelectric effect is applied, can be applied. Piezo actuators can accurately position from extremely small ranges such as nanometers to hundreds of microns.
Further, since the piezo actuator is made of ceramic, it is very hard and can generate a large force. In addition, the piezo actuator can be driven compactly and energy-saving. In the present embodiment, the piezo actuator is applied as the actuator 39, but it is of course possible to apply another driving means such as a linear motor.
　このレーザアニール装置１Ｅでは、軽量なファイバアレイ３１のみを移動させるだけでよいため、アクチュエータ３９の負荷が小さく、迅速なオートフォーカス機能を備えることができる。 In this laser annealing device 1E, since it is only necessary to move the lightweight fiber array 31, the load on the actuator 39 is small, and a quick autofocus function can be provided.
［第７の実施の形態］
　図１２は、本発明の第7の実施の形態に係るレーザアニール装置１Ｆを示す概略構成図である。本実施の形態では、単一の光源としての半導体レーザＬＤと、カップリングレンズ２１と、単一の光ファイバ２２と、単一の光学ヘッド３と、基板１０を搬送する図示しない基板搬送手段と、を備えている。 [7th Embodiment]
FIG. 12 is a schematic configuration diagram showing a laser annealing device 1F according to a seventh embodiment of the present invention. In the present embodiment, a semiconductor laser LD as a single light source, a coupling lens 21, a single optical fiber 22, a single optical head 3, and a substrate transport means (not shown) that transports the substrate 10 , Is equipped.
　半導体レーザＬＤは、上記の各実施の形態と同様に、連続発振レーザ光（ＣＷレーザ光）を発振する。カップリングレンズ２１は、半導体レーザＬＤの出射側に接続されている。カップリングレンズ２１には、導波路としての光ファイバ２２の一端部が接続されている。本実施の形態では、光ファイバ２２として例えば方形ファイバを適用している。 The semiconductor laser LD oscillates continuously oscillating laser light (CW laser light) in the same manner as in each of the above embodiments. The coupling lens 21 is connected to the emission side of the semiconductor laser LD. One end of an optical fiber 22 as a waveguide is connected to the coupling lens 21. In the present embodiment, for example, a square fiber is applied as the optical fiber 22.
　光学ヘッド３は、結像光学系としての、入射側の第１レンズ３３と、出射側の第２レンズ３４と、を備えている。図１２に示すように、光学ヘッド３には、光ファイバ２２の他端部から出射されたレーザ光が入射される。光学ヘッド３では、レーザ光を下流側（後側）へ向けてスポット部Ｆで収束するレーザビームＬＢｃｗとなるように加工する。本実施の形態においても、スポット部Ｆが非晶質シリコン膜の膜内部（深さ方向の内部）に位置するように設定されている。 The optical head 3 includes a first lens 33 on the incident side and a second lens 34 on the exit side as an imaging optical system. As shown in FIG. 12, the laser beam emitted from the other end of the optical fiber 22 is incident on the optical head 3. In the optical head 3, the laser beam is processed so as to be a laser beam LBcw that is directed to the downstream side (rear side) and converges at the spot portion F. Also in this embodiment, the spot portion F is set to be located inside the amorphous silicon film (inside in the depth direction).
　本実施の形態においても、レーザビームＬＢｃｗは、トップハット型形状の特性を持ち、光軸に直交する方向の断面形状が正方形である。なお、レーザビームＬＢｃｗの断面形状は、長方形、六角形などであってもよい。レーザビームＬＢｃｗの断面形状をこのような形状にするには、光ファイバ２２のコアの断面形状を、正方形、長方形、六角形などに設定すればよい。 Also in this embodiment, the laser beam LBcw has the characteristics of a top hat shape, and the cross-sectional shape in the direction orthogonal to the optical axis is square. The cross-sectional shape of the laser beam LBcw may be rectangular, hexagonal, or the like. In order to make the cross-sectional shape of the laser beam LBcw such a shape, the cross-sectional shape of the core of the optical fiber 22 may be set to a square, a rectangle, a hexagon, or the like.
　図示しない基板搬送手段は、上記した各実施の形態と同様に、レーザアニール処理を施す基板１０をスキャン方向へ任意の速度で搬送する機構を備える。したがって、光学ヘッド３の位置を固定した状態で基板１０側を搬送することによって、基板１０に対してレーザビームＬＢｃｗを相対的にスキャンするようになっている。 The substrate transporting means (not shown) includes a mechanism for transporting the substrate 10 to be subjected to the laser annealing treatment in the scanning direction at an arbitrary speed, as in each of the above-described embodiments. Therefore, the laser beam LBcw is scanned relative to the substrate 10 by transporting the substrate 10 side with the position of the optical head 3 fixed.
　本実施の形態に係るレーザアニール装置１Ｆによれば、レーザビームＬＢｃｗにおけるパワー密度の高いスポット部Ｆが非晶質シリコン膜の膜内部に位置するため、非晶質シリコン膜に重点的に大きな熱量が供給される。そして、スポット部Ｆから大部分の熱が側方に向けて非晶質シリコン膜の内部を伝達される。スポット部Ｆの後側（下側）では、ビームが拡散するため、下地のシリコン酸化膜等に到達する光のパワー密度が低くなり、非晶質シリコン膜の下層側を過熱することを抑制できる。このため、レーザアニール装置１Ｆによれば、ゲートラインやその他の配線パターンやガラス基板などが過熱により損傷されることを回避できる。 According to the laser annealing apparatus 1F according to the present embodiment, since the spot portion F having a high power density in the laser beam LBcw is located inside the amorphous silicon film, a large amount of heat is focused on the amorphous silicon film. Is supplied. Then, most of the heat is transferred from the spot portion F toward the side inside the amorphous silicon film. Since the beam is diffused on the rear side (lower side) of the spot portion F, the power density of the light reaching the underlying silicon oxide film or the like is lowered, and it is possible to suppress overheating of the lower layer side of the amorphous silicon film. .. Therefore, according to the laser annealing device 1F, it is possible to prevent the gate line, other wiring patterns, the glass substrate, and the like from being damaged by overheating.
　なお、本実施の形態におけるレーザアニール方法は、ゲートライン上層の非晶質シリコン膜に対して、単一の光源から連続発振されるレーザ光を出射させ、単一の改質予定領域にレーザビームを照射する方法である。レーザビームＬＢｃｗによる作用は、上記第1の実施の形態に係るレーザアニール方法と同様である。 In the laser annealing method of the present embodiment, a laser beam continuously oscillated from a single light source is emitted from an amorphous silicon film on the upper layer of the gate line, and a laser beam is applied to a single planned modification region. It is a method of irradiating. The action of the laser beam LBcw is the same as the laser annealing method according to the first embodiment.
[第８の実施の形態]
　図１３は、本発明の第８の実施の形態に係るレーザアニール装置およびレーザアニール方法の基本原理を示す。 [Eighth Embodiment]
FIG. 13 shows the basic principle of the laser annealing apparatus and the laser annealing method according to the eighth embodiment of the present invention.
　上記の第1～７の実施の形態では、レーザビームＬＢｃｗにおいて最も収束するスポット部Ｆが、改質予定領域の非晶質シリコン膜１５ａの膜内部に位置する状態で、レーザビームＬＢｃｗをスキャンさせた。これに対して、本実施の形態では、図１３に示すように、レーザビームＬＢｃｗにおける焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域Ａが、非晶質シリコン膜１５ａの膜内部の領域に重なる状態で、レーザビームＬＢｃｗを改質予定領域内でスキャンさせる。すなわち、本実施の形態に係るレーザアニール装置では、図１３に示すレーザビームＬＢｃｗの領域Ａに非晶質シリコン１５ａが重なる状態であればよい。 In the above-described first to seventh embodiments, the laser beam LBcw is scanned in a state where the spot portion F that converges most in the laser beam LBcw is located inside the amorphous silicon film 15a in the planned modification region. It was. On the other hand, in the present embodiment, as shown in FIG. 13, the region A including the focal point and the vicinity of the focal point in the laser beam LBcw and the beam profile maintains the top hat type is inside the film of the amorphous silicon film 15a. The laser beam LBcw is scanned in the region to be modified while overlapping the region of. That is, in the laser annealing apparatus according to the present embodiment, it is sufficient that the amorphous silicon 15a overlaps the region A of the laser beam LBcw shown in FIG.
　図１３に示すように、領域Ａは、レーザビームＬＢｃｗにおける（１）、（２）および（３）を含む。図１４－３は、図１３における（１）の範囲のレーザビームの半径方向の位置とパワー密度との関係を示している。図１３に示すように、（１）の領域は、略焦点深度の領域であり、図１４－３に示すように、典型的なトップハット型のビームプロファイルを示す。（２）の領域は、（１）の領域よりも焦点の手前に位置するが、図１４―２に示すように、レーザプロファイルがトップハット型とみなせる領域である。（３）の領域は、（１）の領域よりも焦点よりも後方に位置するが、図１４―４に示すように、レーザプロファイルがトップハット型とみなせる領域である。 As shown in FIG. 13, the region A includes (1), (2) and (3) in the laser beam LBcw. FIG. 14-3 shows the relationship between the radial position of the laser beam in the range (1) in FIG. 13 and the power density. As shown in FIG. 13, the region (1) is a region of substantially depth of focus, and as shown in FIG. 14-3, shows a typical top hat type beam profile. The region (2) is located in front of the focal point than the region (1), but as shown in FIG. 14-2, the laser profile is a region that can be regarded as a top hat type. The region (3) is located behind the focal point after the region (1), but as shown in FIG. 14-4, the laser profile is a region that can be regarded as a top hat type.
　（４）の領域は、（２）の領域よりも手前に位置し、図１４―１に示すように、レーザプロファイルがトップハット型とみなせない形状となる。（５）の領域は、（３）の領域よりも後方に位置し、図１４―５に示すように、レーザプロファイルがトップハット型とみなせない形状となる。したがって、本実施の形態では、図１３に示す領域Ａが、ビームプロファイルがトップハット型を維持する領域と定義される。なお、この領域Ａは、光学ヘッド３などの条件によって適宜設定すればよい。 The region (4) is located in front of the region (2), and as shown in FIG. 14-1, the laser profile has a shape that cannot be regarded as a top hat type. The region (5) is located behind the region (3), and as shown in FIG. 14-5, the laser profile has a shape that cannot be regarded as a top hat type. Therefore, in the present embodiment, the region A shown in FIG. 13 is defined as a region in which the beam profile maintains the top hat type. It should be noted that this region A may be appropriately set depending on the conditions such as the optical head 3.
　（１）の領域は、図１４－３に示すように、非晶質シリコン１５ａをアニールするのに十分なエネルギー密度を有し、必要領域をアニールできる平坦部の幅寸法を有している。（２）および（３）の領域は、図１４―２および図１４－４に示すように、（１）の領域の特性に近似するが、（４）と（５）の領域は、図１４－１および図１４－５に示すように、エネルギー密度が不十分であり、必要領域をアニールするための平坦部の幅が狭いため、非晶質シリコン１５ａの局所的なアニールには不適切な領域である。 As shown in FIG. 14-3, the region (1) has a sufficient energy density for annealing the amorphous silicon 15a, and has a width dimension of a flat portion capable of annealing the required region. The regions (2) and (3) are similar to the characteristics of the region (1) as shown in FIGS. 14-2 and 14-4, but the regions (4) and (5) are shown in FIG. As shown in -1 and FIG. 14-5, the energy density is insufficient and the width of the flat portion for annealing the required region is narrow, which is not suitable for local annealing of amorphous silicon 15a. It is an area.
　以上、本発明の第８の実施の形態について説明したが、他の構成は、上記した第１の実施の形態に係るレーザアニール装置およびレーザアニール方法と同様である。 The eighth embodiment of the present invention has been described above, but other configurations are the same as the laser annealing apparatus and laser annealing method according to the first embodiment described above.
　本実施の形態では、例えば、非晶質シリコン１５ａが、図１３に示す（２）の領域に位置する場合に、見かけ上は非晶質シリコン１５ａの下側の基板や配線などに焦点位置が来るが、光の大半が非晶質シリコン１５ａで吸引されるので、非晶質シリコン１５ａの下側の基板、配線などに対して熱的損傷を与えることはない。したがって、本実施の形態によれば、光学ヘッド３などの条件設定が容易となり装置コストを低減することが可能である。 In the present embodiment, for example, when the amorphous silicon 15a is located in the region (2) shown in FIG. 13, the focal position is apparently located on the substrate or wiring below the amorphous silicon 15a. However, since most of the light is attracted by the amorphous silicon 15a, it does not cause thermal damage to the substrate, wiring, etc. under the amorphous silicon 15a. Therefore, according to the present embodiment, it is possible to easily set the conditions of the optical head 3 and the like, and to reduce the device cost.
（その他の実施の形態）
　以上、本発明の実施の形態について説明したが、実施の形態の開示の一部をなす論述および図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例および運用技術が明らかとなろう。 (Other embodiments)
Although embodiments of the present invention have been described above, the statements and drawings that form part of the disclosure of the embodiments should not be understood to limit the invention. This disclosure will reveal to those skilled in the art various alternative embodiments, examples and operational techniques.
　上記の実施の形態では、レーザビームＬＢｃｗとして、トップハット型を適用したが、ドーナツ型形状のレーザビームＬＢｃｗとしてもよい。このようなドーナツ型形状のレーザビームＬＢｃｗを用いることにより、改質予定領域に形成した結晶化膜の輪郭部も確実に結晶化できるという利点がある。 In the above embodiment, the top hat type is applied as the laser beam LBcw, but a donut-shaped laser beam LBcw may be used. By using such a donut-shaped laser beam LBcw, there is an advantage that the contour portion of the crystallization film formed in the planned modification region can be reliably crystallized.
　上記の各実施の形態では、ファイバアレイ３１の出射端面において、光ファイバ２２の他端部が一直線上に並ぶように配置したが、等間隔なゲートライン１２に対応してレーザビームＬＢｃｗを照射できれば、光ファイバ２２の他端部が一直線上に並ばなくともよい。 In each of the above embodiments, the other ends of the optical fibers 22 are arranged so as to be aligned on the emission end surface of the fiber array 31, but if the laser beam LBcw can be irradiated corresponding to the gate lines 12 at equal intervals. , The other end of the optical fiber 22 does not have to be aligned in a straight line.
　上記の第１～６の実施の形態では、複数のレーザビームＬＢｃｗのピッチが、ゲートラインのピッチと同じになるように設定して、レーザビームＬＢｃｗをゲートライン１２に沿った方向にスキャンしたが、レーザビームＬＢｃｗのピッチを、ゲートライン１２に沿ってＴＦＴを形成する改質予定領域のピッチの整数倍に設定すれば、レーザビームＬＢｃｗをゲートライン１２と直交する方向にスキャンすることも可能である。 In the above-described first to sixth embodiments, the pitch of the plurality of laser beams LBcw is set to be the same as the pitch of the gate line, and the laser beam LBcw is scanned in the direction along the gate line 12. If the pitch of the laser beam LBcw is set to an integral multiple of the pitch of the region to be reformed along the gate line 12, the laser beam LBcw can be scanned in the direction orthogonal to the gate line 12. is there.
　Ｄ１，Ｄ２　光量センサ
　ＬＤ　半導体レーザ
　１，１Ａ，１Ｂ，１Ｃ，１Ｄ，１Ｅ，１Ｆ　レーザアニール装置
　２　光源ユニット
　３　光学ヘッド
　１０　基板（被レーザアニール処理基板）
　１１　ガラス基板（基板）
　１２　ゲートライン
　１３　シリコン窒化膜
　１４　シリコン酸化膜
　１５ａ　非晶質シリコン膜
　２１　カップリングレンズ
　２２　光ファイバ
　３１　ファイバアレイ
　３２，３２Ｂ　結像光学系
　３３　第１レンズ
　３４　第２レンズ
　３５　ビームスプリッタ
　３６　側方レンズ
　３７　マスク
　３７Ａ　開口
　３８　結像光学系
　３９　アクチュエータ
  D1, D2 Light quantity sensor LD semiconductor laser 1,1A, 1B, 1C, 1D, 1E, 1F Laser annealing device 2 Light source unit 3 Optical head 10 Substrate (Laser-annealed substrate)
11 Glass substrate (substrate)
12 Gateline 13 Silicon nitride film 14 Silicon oxide film 15a Amorphous silicon film 21 Coupling lens 22 Optical fiber 31 Fiber array 32, 32B Imaging optical system 33 First lens 34 Second lens 35 Beam splitter 36 Side lens 37 Mask 37A Aperture 38 Imaging optical system 39 Actuator

Claims (28)

  1. 　基板の上にゲートラインが形成され、前記ゲートラインの上層に前記ゲートラインの全体を覆うように成膜された非晶質シリコン膜に対して、
    　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール装置であって、
    　連続発振されるレーザ光を出射する光源と、
    　前記光源から出射された前記レーザ光を、収束するレーザビームとなるように加工して、前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に対応して投影可能にする光学ヘッドと、
    　を備え、
    　前記光学ヘッドは、前記レーザビームにおいて最も収束するスポット部が、前記改質予定領域の前記非晶質シリコン膜の膜内部に位置する状態で、前記レーザビームが前記改質予定領域内を相対的にスキャンされることを特徴とするレーザアニール装置。     For an amorphous silicon film in which a gate line is formed on a substrate and a film is formed on the upper layer of the gate line so as to cover the entire gate line.
    A laser annealing device that irradiates a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film.
    A light source that emits continuously oscillated laser light,
    Optics that processes the laser beam emitted from the light source into a converging laser beam so that the laser beam can be projected correspondingly within the planned modification region located above the gate line. With the head
    With
    In the optical head, the laser beam is relative in the planned modification region in a state where the spot portion that converges most in the laser beam is located inside the amorphous silicon film in the planned modification region. A laser annealing device characterized by being scanned into.
  2. 　基板の上にゲートラインが形成され、前記ゲートラインの上層に前記基板の全体を覆うように成膜された非晶質シリコン膜に対して、
    　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール装置であって、
    　連続発振されるレーザ光を出射する光源と、
    　前記光源から出射された前記レーザ光を、収束するレーザビームとなるように加工して、前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に対応して投影可能にする光学ヘッドと、
    　を備え、
    　前記光学ヘッドは、前記レーザビームにおいて最も収束するスポット部が、前記改質予定領域の前記非晶質シリコン膜の膜内部に位置する状態で、前記レーザビームが前記改質予定領域を内包する所定の領域を相対的にスキャンされることを特徴とするレーザアニール装置。     For an amorphous silicon film in which a gate line is formed on a substrate and a film is formed on the upper layer of the gate line so as to cover the entire substrate.
    A laser annealing device that irradiates a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film.
    A light source that emits continuously oscillated laser light,
    Optics that processes the laser beam emitted from the light source into a converging laser beam so that the laser beam can be projected correspondingly within the planned modification region located above the gate line. With the head
    With
    In the optical head, a predetermined spot portion where the laser beam converges most is located inside the amorphous silicon film in the planned modification region, and the laser beam includes the planned modification region. A laser annealing device characterized in that a region of a laser is relatively scanned.
  3. 　基板の上にゲートラインが形成され、前記ゲートラインの上層に前記ゲートラインの全体を覆うように成膜された非晶質シリコン膜に対して、
    　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール装置であって、
    　連続発振されるレーザ光を出射する光源と、
    　前記光源から出射された前記レーザ光を、収束するレーザビームとなるように加工して、前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に対応して投影可能にする光学ヘッドと、
    　を備え、
    　前記光学ヘッドは、前記レーザビームにおける焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域が、前記改質予定領域の前記非晶質シリコン膜の膜内部の領域に重なる状態で、前記レーザビームが前記改質予定領域内を相対的にスキャンされることを特徴とするレーザアニール装置。     For an amorphous silicon film in which a gate line is formed on a substrate and a film is formed on the upper layer of the gate line so as to cover the entire gate line.
    A laser annealing device that irradiates a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film.
    A light source that emits continuously oscillated laser light,
    Optics that processes the laser beam emitted from the light source into a converging laser beam so that the laser beam can be projected correspondingly within the planned modification region located above the gate line. With the head
    With
    The optical head includes the focal point and the vicinity of the focal point in the laser beam, and the region in which the beam profile maintains a top hat shape overlaps the region inside the amorphous silicon film in the planned modification region. A laser annealing apparatus characterized in that a laser beam is relatively scanned in the planned reforming region.
  4. 　基板の上にゲートラインが形成され、前記ゲートラインの上層に前記基板の全体を覆うように成膜された非晶質シリコン膜に対して、
    　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール装置であって、
    　連続発振されるレーザ光を出射する光源と、
    　前記光源から出射された前記レーザ光を、収束するレーザビームとなるように加工して、前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に対応して投影可能にする光学ヘッドと、
    　を備え、
    　前記光学ヘッドは、前記レーザビームにおける焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域が、前記改質予定領域の前記非晶質シリコン膜の膜内部の領域に重なる状態で、前記レーザビームが前記改質予定領域を内包する所定の領域を相対的にスキャンされることを特徴とするレーザアニール装置。     For an amorphous silicon film in which a gate line is formed on a substrate and a film is formed on the upper layer of the gate line so as to cover the entire substrate.
    A laser annealing device that irradiates a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film.
    A light source that emits continuously oscillated laser light,
    Optics that processes the laser beam emitted from the light source into a converging laser beam so that the laser beam can be projected correspondingly within the planned modification region located above the gate line. With the head
    With
    The optical head includes the focal point and the vicinity of the focal point in the laser beam, and the region in which the beam profile maintains a top hat shape overlaps the region inside the amorphous silicon film in the planned modification region. A laser annealing apparatus characterized in that a laser beam relatively scans a predetermined region including the region to be reformed.
  5. 　前記光源から出射された前記レーザ光は、前記光学ヘッドに設けられた光ファイバに導かれる、請求項１から請求項４のいずれか一項に記載のレーザアニール装置。 The laser annealing apparatus according to any one of claims 1 to 4, wherein the laser light emitted from the light source is guided to an optical fiber provided in the optical head.
  6. 　前記光ファイバの光軸方向と直角をなす断面形状が、正方形、長方形、あるいは六角形である、請求項５に記載のレーザアニール装置。 The laser annealing apparatus according to claim 5, wherein the cross-sectional shape perpendicular to the optical axis direction of the optical fiber is a square, a rectangle, or a hexagon.
  7. 　基板の上に互いに平行をなす複数のゲートラインが形成され、前記複数の前記ゲートラインの上層に前記複数の前記ゲートラインの全体を覆うように成膜された非晶質シリコン膜に対して、
    　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール装置であって、
    　連続発振されるレーザ光をそれぞれ出射する複数の光源と、
    　複数の前記光源から出射されたそれぞれの前記レーザ光を、収束するレーザビームとなるように加工して、それぞれの前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に順次、対応して投影可能にする光学ヘッドと、
    　を備え、
    　前記光学ヘッドは、それぞれの前記レーザビームにおいて最も収束するスポット部が、前記改質予定領域の前記非晶質シリコン膜の膜内部に位置する状態で、前記レーザビームが前記改質予定領域内を相対的にスキャンされることを特徴とするレーザアニール装置。     With respect to the amorphous silicon film in which a plurality of gate lines parallel to each other are formed on the substrate and formed on the upper layer of the plurality of gate lines so as to cover the entire gate lines.
    A laser annealing device that irradiates a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film.
    Multiple light sources that emit continuously oscillated laser light,
    Each of the laser beams emitted from the plurality of light sources is processed so as to be a convergent laser beam, and each of the laser beams is sequentially within the planned modification region located above the gate line. An optical head that enables projection correspondingly,
    With
    In the optical head, the laser beam moves in the planned modification region in a state where the spot portion where the laser beam converges most is located inside the amorphous silicon film in the planned modification region. A laser annealing device characterized by being relatively scanned.
  8. 　基板の上に互いに平行をなす複数のゲートラインが形成され、前記複数の前記ゲートラインの上層に前記基板の全体を覆うように成膜された非晶質シリコン膜に対して、
    　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール装置であって、
    　連続発振されるレーザ光をそれぞれ出射する複数の光源と、
    　複数の前記光源から出射されたそれぞれの前記レーザ光を、収束するレーザビームとなるように加工して、それぞれの前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に順次、対応して投影可能にする光学ヘッドと、
    　を備え、
    　前記光学ヘッドは、それぞれの前記レーザビームにおいて最も収束するスポット部が、前記改質予定領域の前記非晶質シリコン膜の膜内部に位置する状態で、前記レーザビームが前記改質予定領域を内包する所定の領域を相対的にスキャンされることを特徴とするレーザアニール装置。     With respect to the amorphous silicon film in which a plurality of gate lines parallel to each other are formed on the substrate and formed on the upper layer of the plurality of gate lines so as to cover the entire substrate.
    A laser annealing device that irradiates a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film.
    Multiple light sources that emit continuously oscillated laser light,
    Each of the laser beams emitted from the plurality of light sources is processed so as to be a convergent laser beam, and each of the laser beams is sequentially within the planned modification region located above the gate line. An optical head that enables projection correspondingly,
    With
    In the optical head, the laser beam includes the planned modification region in a state where the spot portion that converges most in each of the laser beams is located inside the amorphous silicon film in the planned modification region. A laser annealing apparatus characterized in that a predetermined area is relatively scanned.
  9. 　基板の上に互いに平行をなす複数のゲートラインが形成され、前記複数の前記ゲートラインの上層に前記複数の前記ゲートラインの全体を覆うように成膜された非晶質シリコン膜に対して、
    　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール装置であって、
    　連続発振されるレーザ光をそれぞれ出射する複数の光源と、
    　複数の前記光源から出射されたそれぞれの前記レーザ光を、収束するレーザビームとなるように加工して、それぞれの前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に順次、対応して投影可能にする光学ヘッドと、
    　を備え、
    　前記光学ヘッドは、それぞれの前記レーザビームにおける焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域が、前記改質予定領域の前記非晶質シリコン膜の膜内部の領域に重なる状態で、前記レーザビームが前記改質予定領域内を相対的にスキャンされることを特徴とするレーザアニール装置。     With respect to the amorphous silicon film in which a plurality of gate lines parallel to each other are formed on the substrate and formed on the upper layer of the plurality of gate lines so as to cover the entire gate lines.
    A laser annealing device that irradiates a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film.
    Multiple light sources that emit continuously oscillated laser light,
    Each of the laser beams emitted from the plurality of light sources is processed so as to be a convergent laser beam, and each of the laser beams is sequentially within the planned modification region located above the gate line. An optical head that enables projection correspondingly,
    With
    The optical head includes the focal point and the vicinity of the focal point in each of the laser beams, and the region in which the beam profile maintains the top hat type overlaps the region inside the amorphous silicon film of the planned modification region. , A laser annealing apparatus, characterized in that the laser beam is relatively scanned in the planned reforming region.
  10. 　基板の上に互いに平行をなす複数のゲートラインが形成され、前記複数の前記ゲートラインの上層に前記基板の全体を覆うように成膜された非晶質シリコン膜に対して、
    　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール装置であって、
    　連続発振されるレーザ光をそれぞれ出射する複数の光源と、
    　複数の前記光源から出射されたそれぞれの前記レーザ光を、収束するレーザビームとなるように加工して、それぞれの前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に順次、対応して投影可能にする光学ヘッドと、
    　を備え、
    　前記光学ヘッドは、それぞれの前記レーザビームにおける焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域が、前記改質予定領域の前記非晶質シリコン膜の膜内部の領域に重なる状態で、前記レーザビームが前記改質予定領域を内包する所定の領域を相対的にスキャンされることを特徴とするレーザアニール装置。     With respect to the amorphous silicon film in which a plurality of gate lines parallel to each other are formed on the substrate and formed on the upper layer of the plurality of gate lines so as to cover the entire substrate.
    A laser annealing device that irradiates a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film into a crystallized film.
    Multiple light sources that emit continuously oscillated laser light,
    Each of the laser beams emitted from the plurality of light sources is processed so as to be a convergent laser beam, and each of the laser beams is sequentially within the planned modification region located above the gate line. An optical head that enables projection correspondingly,
    With
    The optical head includes the focal point and the vicinity of the focal point in each of the laser beams, and the region in which the beam profile maintains the top hat type overlaps the region inside the amorphous silicon film of the planned modification region. , A laser annealing apparatus, characterized in that the laser beam is relatively scanned in a predetermined region including the region to be reformed.
  11. 　前記改質予定領域は、薄膜トランジスタのチャネル半導体層である、
    　請求項７に記載のレーザアニール装置。     The planned modification region is the channel semiconductor layer of the thin film transistor.
    The laser annealing apparatus according to claim 7.
  12. 　前記光学ヘッドから出射された前記レーザビームは、前記非晶質シリコン膜の表面に対して所定の直線に沿って一定のピッチで並ぶように投影される、
    　請求項７から請求項１０のいずれかに記載のレーザアニール装置。     The laser beam emitted from the optical head is projected onto the surface of the amorphous silicon film along a predetermined straight line at a constant pitch.
    The laser annealing apparatus according to any one of claims 7 to 10.
  13. 　前記光学ヘッドは、前記複数の前記レーザビームのピッチが、ゲートラインのピッチに等しくなるように回転移動可能である、
    　請求項１２に記載のレーザアニール装置。     The optical head can rotate so that the pitch of the plurality of laser beams is equal to the pitch of the gate line.
    The laser annealing apparatus according to claim 12.
  14. 　前記複数の前記レーザビームのそれぞれの光量を検出する光量センサを備え、
    　前記光量センサで検出された前記レーザビームの光量に基づいて、当該レーザビームを出射する前記光源の出力を調整可能である、
    　請求項７に記載のレーザアニール装置。     A light amount sensor for detecting the light amount of each of the plurality of laser beams is provided.
    The output of the light source that emits the laser beam can be adjusted based on the light intensity of the laser beam detected by the light amount sensor.
    The laser annealing apparatus according to claim 7.
  15. 　前記光量センサは、前記光学ヘッドの後方に配置される、
    　請求項１４に記載のレーザアニール装置。     The light sensor is located behind the optical head.
    The laser annealing apparatus according to claim 14.
  16. 　前記光学ヘッドは、前記レーザビームを側方へ反射するビームスプリッタを備え、前記光量センサは、前記光学ヘッドの側方に配置される、
    　請求項１４に記載のレーザアニール装置。     The optical head includes a beam splitter that reflects the laser beam laterally, and the photometric sensor is arranged laterally to the optical head.
    The laser annealing apparatus according to claim 14.
  17. 　前記光学ヘッドは、前記レーザビームを側方へ反射するスキャンミラーを備え、前記光量センサは、前記光学ヘッドの側方に配置される、
    　請求項１４に記載のレーザアニール装置。     The optical head includes a scan mirror that reflects the laser beam laterally, and the light amount sensor is arranged on the side of the optical head.
    The laser annealing apparatus according to claim 14.
  18. 　前記複数の前記光源から出射されたそれぞれの前記レーザ光は、前記光学ヘッドに設けられたファイバアレイのそれぞれの光ファイバに導かれる、
    　請求項７に記載のレーザアニール装置。     Each of the laser beams emitted from the plurality of light sources is guided to each optical fiber of the fiber array provided in the optical head.
    The laser annealing apparatus according to claim 7.
  19. 　前記光学ヘッドは、前記ファイバアレイと、結像光学系と、を備え、
    　前記ファイバアレイは、アクチュエータにより光軸方向に沿って移動可能であり、
    　前記結像光学系は、テレセントリック光学系で構成されている
    　請求項１８に記載のレーザアニール装置。     The optical head includes the fiber array and an imaging optical system.
    The fiber array can be moved along the optical axis by an actuator.
    The laser annealing apparatus according to claim 18, wherein the imaging optical system is composed of a telecentric optical system.
  20. 　前記光ファイバの光軸方向と直角をなす断面形状が、正方形、長方形、あるいは六角形である、請求項１８に記載のレーザアニール装置。 The laser annealing apparatus according to claim 18, wherein the cross-sectional shape formed at right angles to the optical axis direction of the optical fiber is a square, a rectangle, or a hexagon.
  21. 　基板の上にゲートラインが形成され、前記ゲートラインの上層に前記ゲートラインの全体を覆うように成膜された非晶質シリコン膜に対して、
    　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール方法であって、
    　光源から、連続発振されるレーザ光を出射させ、
    　前記光源から出射された前記レーザ光を、光学ヘッドで、収束するレーザビームとなるように加工して、前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に対応して投影させ、前記レーザビームにおいて最も収束するスポット部が、前記改質予定領域の前記非晶質シリコン膜の膜内部に位置するように配置させ、
    　前記光学ヘッドを、前記レーザビームが前記改質予定領域内を相対的にスキャンされるように移動させることを特徴とするレーザアニール方法。     For an amorphous silicon film in which a gate line is formed on a substrate and a film is formed on the upper layer of the gate line so as to cover the entire gate line.
    A laser annealing method in which a crystallized film is modified by irradiating a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film.
    A continuously oscillated laser beam is emitted from the light source.
    The laser beam emitted from the light source is processed by an optical head so as to be a converging laser beam, and the laser beam is projected correspondingly within the planned modification region located above the gate line. The spot portion that converges most in the laser beam is arranged so as to be located inside the amorphous silicon film in the planned modification region.
    A laser annealing method characterized by moving the optical head so that the laser beam is relatively scanned in the planned modification region.
  22. 　基板の上にゲートラインが形成され、前記ゲートラインの上層に前記基板の全体を覆うように成膜された非晶質シリコン膜に対して、
    　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール方法であって、
    　光源から、連続発振されるレーザ光を出射させ、
    　前記光源から出射された前記レーザ光を、光学ヘッドで、収束するレーザビームとなるように加工して、前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に対応して投影させ、前記レーザビームにおいて最も収束するスポット部が、前記改質予定領域の前記非晶質シリコン膜の膜内部に位置するように配置させ、
    　前記光学ヘッドを、前記レーザビームが前記改質予定領域を内包する所定の領域を相対的にスキャンされるように移動させることを特徴とするレーザアニール方法。     For an amorphous silicon film in which a gate line is formed on a substrate and a film is formed on the upper layer of the gate line so as to cover the entire substrate.
    A laser annealing method in which a crystallized film is modified by irradiating a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film.
    A continuously oscillated laser beam is emitted from the light source.
    The laser beam emitted from the light source is processed by an optical head so as to be a converging laser beam, and the laser beam is projected correspondingly within the planned modification region located above the gate line. The spot portion that converges most in the laser beam is arranged so as to be located inside the amorphous silicon film in the planned modification region.
    A laser annealing method comprising moving the optical head so that the laser beam relatively scans a predetermined region including the region to be modified.
  23. 　基板の上にゲートラインが形成され、前記ゲートラインの上層に前記ゲートラインの全体を覆うように成膜された非晶質シリコン膜に対して、
    　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール方法であって、
    　光源から、連続発振されるレーザ光を出射させ、
    前記光源から出射された前記レーザ光を、光学ヘッドで、収束するレーザビームとなるように加工して、前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に対応して投影させ、前記レーザビームにおいて焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域が、前記改質予定領域の前記非晶質シリコン膜の膜内部の領域に重なるように配置させ、
    　前記光学ヘッドを、前記レーザビームが前記改質予定領域内を相対的にスキャンされるように移動させることを特徴とするレーザアニール方法。     For an amorphous silicon film in which a gate line is formed on a substrate and a film is formed on the upper layer of the gate line so as to cover the entire gate line.
    A laser annealing method in which a crystallized film is modified by irradiating a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film.
    A continuously oscillated laser beam is emitted from the light source.
    The laser beam emitted from the light source is processed by an optical head so as to be a convergent laser beam, and the laser beam is projected correspondingly within the planned modification region located above the gate line. The laser beam is arranged so that the region including the focal point and the vicinity of the focal point and maintaining the top hat shape of the beam profile overlaps the region inside the amorphous silicon film of the planned modification region.
    A laser annealing method characterized by moving the optical head so that the laser beam is relatively scanned in the planned modification region.
  24. 　基板の上にゲートラインが形成され、前記ゲートラインの上層に前記基板の全体を覆うように成膜された非晶質シリコン膜に対して、
    　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール方法であって、
    　光源から、連続発振されるレーザ光を出射させ、
    前記光源から出射された前記レーザ光を、光学ヘッドで、収束するレーザビームとなるように加工して、前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に対応して投影させ、前記レーザビームにおいて焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域が、前記改質予定領域の前記非晶質シリコン膜の膜内部の領域に重なるように配置させ、
    　前記光学ヘッドを、前記レーザビームが前記改質予定領域を内包する所定の領域を相対的にスキャンされるように移動させることを特徴とするレーザアニール方法。     For an amorphous silicon film in which a gate line is formed on a substrate and a film is formed on the upper layer of the gate line so as to cover the entire substrate.
    A laser annealing method in which a crystallized film is modified by irradiating a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film.
    A continuously oscillated laser beam is emitted from the light source.
    The laser beam emitted from the light source is processed by an optical head so as to be a convergent laser beam, and the laser beam is projected correspondingly within the planned modification region located above the gate line. The laser beam is arranged so that the region including the focal point and the vicinity of the focal point and maintaining the top hat shape of the beam profile overlaps the region inside the amorphous silicon film of the planned modification region.
    A laser annealing method comprising moving the optical head so that the laser beam relatively scans a predetermined region including the region to be modified.
  25. 　基板の上に互いに平行をなす複数のゲートラインが形成され、前記複数のゲートラインの上層に前記複数のゲートラインの全体を覆うように成膜された非晶質シリコン膜に対して、
    　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール方法であって、
    　複数の光源のそれぞれから、連続発振されるレーザ光を出射させ、
    　複数の前記光源から出射されたそれぞれの前記レーザ光を、光学ヘッドで、収束するレーザビームとなるように加工して、それぞれの前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に順次、対応して投影させ、それぞれの前記レーザビームにおいて最も収束するスポット部が、前記改質予定領域の前記非晶質シリコン膜の膜内部に位置するように配置させ、
    　前記光学ヘッドを、前記レーザビームが前記改質予定領域内を相対的にスキャンされるように移動させることを特徴とするレーザアニール方法。     With respect to the amorphous silicon film in which a plurality of gate lines parallel to each other are formed on the substrate and formed on the upper layer of the plurality of gate lines so as to cover the entire of the plurality of gate lines.
    A laser annealing method in which a crystallized film is modified by irradiating a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film.
    Laser light that is continuously oscillated is emitted from each of multiple light sources.
    Each of the laser beams emitted from the plurality of light sources is processed by an optical head so as to be a convergent laser beam, and each of the laser beams is located above the gate line. The spots that converge most in each of the laser beams are arranged so as to be located inside the amorphous silicon film in the planned modification region.
    A laser annealing method characterized by moving the optical head so that the laser beam is relatively scanned in the planned modification region.
  26. 　基板の上に互いに平行をなす複数のゲートラインが形成され、前記複数のゲートラインの上層に前記基板の全体を覆うように成膜された非晶質シリコン膜に対して、
    　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール方法であって、
    　複数の光源のそれぞれから、連続発振されるレーザ光を出射させ、
    　複数の前記光源から出射されたそれぞれの前記レーザ光を、光学ヘッドで、収束するレーザビームとなるように加工して、それぞれの前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に順次、対応して投影させ、それぞれの前記レーザビームにおいて最も収束するスポット部が、前記改質予定領域の前記非晶質シリコン膜の膜内部に位置するように配置させ、
    　前記光学ヘッドを、前記レーザビームが前記改質予定領域を内包する所定の領域を相対的にスキャンされるように移動させることを特徴とするレーザアニール方法。     With respect to the amorphous silicon film in which a plurality of gate lines parallel to each other are formed on the substrate and formed on the upper layer of the plurality of gate lines so as to cover the entire substrate.
    A laser annealing method in which a crystallized film is modified by irradiating a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film.
    Laser light that is continuously oscillated is emitted from each of multiple light sources.
    Each of the laser beams emitted from the plurality of light sources is processed by an optical head so as to be a convergent laser beam, and each of the laser beams is located above the gate line. The spots that converge most in each of the laser beams are arranged so as to be located inside the amorphous silicon film in the planned modification region.
    A laser annealing method comprising moving the optical head so that the laser beam relatively scans a predetermined region including the region to be modified.
  27. 　基板の上に互いに平行をなす複数のゲートラインが形成され、前記複数のゲートラインの上層に前記複数のゲートラインの全体を覆うように成膜された非晶質シリコン膜に対して、
    　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール方法であって、
    　複数の光源のそれぞれから、連続発振されるレーザ光を出射させ、
    　複数の前記光源から出射されたそれぞれの前記レーザ光を、光学ヘッドで、収束するレーザビームとなるように加工して、それぞれの前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に順次、対応して投影させ、それぞれの前記レーザビームにおいて焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域が、前記改質予定領域の前記非晶質シリコン膜の膜内部の領域に重なるように配置させ、
    　前記光学ヘッドを、前記レーザビームが前記改質予定領域内を相対的にスキャンされるように移動させることを特徴とするレーザアニール方法。     With respect to the amorphous silicon film in which a plurality of gate lines parallel to each other are formed on the substrate and formed on the upper layer of the plurality of gate lines so as to cover the entire of the plurality of gate lines.
    A laser annealing method in which a crystallized film is modified by irradiating a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film.
    Laser light that is continuously oscillated is emitted from each of multiple light sources.
    Each of the laser beams emitted from the plurality of light sources is processed by an optical head so as to be a convergent laser beam, and each of the laser beams is located above the gate line. In each of the laser beams, the region in which the beam profile maintains the top hat shape, including the focal point and the vicinity of the focal point, is the region inside the amorphous silicon film of the planned modification region. Arrange them so that they overlap the area,
    A laser annealing method characterized by moving the optical head so that the laser beam is relatively scanned in the planned modification region.
  28. 　基板の上に互いに平行をなす複数のゲートラインが形成され、前記複数のゲートラインの上層に前記基板の全体を覆うように成膜された非晶質シリコン膜に対して、
    　連続発振レーザ光を照射して前記非晶質シリコン膜の改質予定領域を結晶化膜に改質させるレーザアニール方法であって、
    　複数の光源のそれぞれから、連続発振されるレーザ光を出射させ、
    　複数の前記光源から出射されたそれぞれの前記レーザ光を、光学ヘッドで、収束するレーザビームとなるように加工して、それぞれの前記レーザビームが前記ゲートラインの上方に位置する前記改質予定領域内に順次、対応して投影させ、それぞれの前記レーザビームにおいて焦点および焦点近傍を含みビームプロファイルがトップハット型を維持する領域が、前記改質予定領域の前記非晶質シリコン膜の膜内部の領域に重なるように配置させ、
    　前記光学ヘッドを、前記レーザビームが前記改質予定領域を内包する所定の領域を相対的にスキャンされるように移動させることを特徴とするレーザアニール方法。     With respect to the amorphous silicon film in which a plurality of gate lines parallel to each other are formed on the substrate and formed on the upper layer of the plurality of gate lines so as to cover the entire substrate.
    A laser annealing method in which a crystallized film is modified by irradiating a continuously oscillating laser beam to modify a region to be modified of the amorphous silicon film.
    Laser light that is continuously oscillated is emitted from each of multiple light sources.
    Each of the laser beams emitted from the plurality of light sources is processed by an optical head so as to be a convergent laser beam, and each of the laser beams is located above the gate line. In each of the laser beams, the region in which the beam profile maintains the top hat shape, including the focal point and the vicinity of the focal point, is the region inside the amorphous silicon film of the planned modification region. Arrange them so that they overlap the area,
    A laser annealing method comprising moving the optical head so that the laser beam relatively scans a predetermined region including the region to be modified.
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