CN113168046A - 驱动基板及其制作方法、显示装置 - Google Patents

驱动基板及其制作方法、显示装置 Download PDF

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CN113168046A
CN113168046A CN201980002099.XA CN201980002099A CN113168046A CN 113168046 A CN113168046 A CN 113168046A CN 201980002099 A CN201980002099 A CN 201980002099A CN 113168046 A CN113168046 A CN 113168046A
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layer
base plate
substrate
routing
conductive
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CN113168046B (zh
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汪建国
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Structure Of Printed Boards (AREA)
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  • Parts Printed On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

一种驱动基板及其制作方法、显示装置，属于显示技术领域。驱动基板包括：衬底基板(1)；位于所述衬底基板(1)上的应力缓冲层(2)；位于所述应力缓冲层(2)远离所述衬底基板(1)一侧的走线结构，所述走线结构中与所述应力缓冲层(2)接触的走线的厚度大于阈值；位于所述走线结构远离所述衬底基板(1)一侧的第一绝缘层(6)；位于所述第一绝缘层(6)远离所述衬底基板(1)一侧的多个电子元件，所述电子元件通过贯穿所述第一绝缘层(6)的过孔(11)与走线结构连接。

Description

PCT国内申请，说明书已公开。

Claims (22)

  1. PCT国内申请，权利要求书已公开。
CN201980002099.XA 2019-10-24 2019-10-24 驱动基板及其制作方法、显示装置 Active CN113168046B (zh)

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PCT/CN2019/113006 WO2021077354A1 (zh) 2019-10-24 2019-10-24 驱动基板及其制作方法、显示装置

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EP (1) EP4050406A4 (zh)
JP (1) JP7384335B2 (zh)
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111051975A (zh) * 2019-11-27 2020-04-21 京东方科技集团股份有限公司 驱动基板及其制备方法、发光基板和显示装置
WO2023015579A1 (zh) * 2021-08-09 2023-02-16 Tcl华星光电技术有限公司 阵列基板及其制作方法

Citations (6)

* Cited by examiner, † Cited by third party
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US20170213803A1 (en) * 2011-06-08 2017-07-27 X-Celeprint Limited Methods for Surface Attachment of Flipped Active Components
CN109031779A (zh) * 2018-07-25 2018-12-18 京东方科技集团股份有限公司 发光二极管基板、背光模组和显示装置
CN109256400A (zh) * 2018-11-16 2019-01-22 京东方科技集团股份有限公司 柔性显示基板及其制造方法、显示装置
CN109887416A (zh) * 2019-03-15 2019-06-14 京东方科技集团股份有限公司 柔性显示基板及其制造方法、显示装置
CN110133895A (zh) * 2019-06-10 2019-08-16 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
CN110335875A (zh) * 2019-07-02 2019-10-15 武汉华星光电技术有限公司 显示面板及其制作方法

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JP5222165B2 (ja) 2009-01-27 2013-06-26 株式会社沖データ 光源装置及びそれを有するヘッドアップディスプレイ装置
JP5316227B2 (ja) 2009-05-28 2013-10-16 日本電気株式会社 コンデンサ、配線基板およびそれらの製造方法
US8884343B2 (en) 2012-02-24 2014-11-11 Texas Instruments Incorporated System in package and method for manufacturing the same
US9806244B2 (en) 2014-01-10 2017-10-31 Sharp Kabushiki Kaisha Substrate for light emitting device, light emitting device, and manufacturing method of substrate for light emitting device
US20190081077A1 (en) 2016-03-15 2019-03-14 Sharp Kabushiki Kaisha Active matrix substrate
KR102587215B1 (ko) * 2016-12-21 2023-10-12 삼성디스플레이 주식회사 발광 장치 및 이를 구비한 표시 장치
CN208014703U (zh) * 2018-03-29 2018-10-26 昆山工研院新型平板显示技术中心有限公司 驱动背板、微发光二极管显示面板及显示器
CN109597245B (zh) 2019-01-02 2023-12-12 京东方科技集团股份有限公司 背光模组及其制备方法、显示装置
KR20200088954A (ko) * 2019-01-15 2020-07-24 삼성디스플레이 주식회사 표시 장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170213803A1 (en) * 2011-06-08 2017-07-27 X-Celeprint Limited Methods for Surface Attachment of Flipped Active Components
CN109031779A (zh) * 2018-07-25 2018-12-18 京东方科技集团股份有限公司 发光二极管基板、背光模组和显示装置
CN109256400A (zh) * 2018-11-16 2019-01-22 京东方科技集团股份有限公司 柔性显示基板及其制造方法、显示装置
CN109887416A (zh) * 2019-03-15 2019-06-14 京东方科技集团股份有限公司 柔性显示基板及其制造方法、显示装置
CN110133895A (zh) * 2019-06-10 2019-08-16 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
CN110335875A (zh) * 2019-07-02 2019-10-15 武汉华星光电技术有限公司 显示面板及其制作方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111051975A (zh) * 2019-11-27 2020-04-21 京东方科技集团股份有限公司 驱动基板及其制备方法、发光基板和显示装置
WO2023015579A1 (zh) * 2021-08-09 2023-02-16 Tcl华星光电技术有限公司 阵列基板及其制作方法
US11984456B2 (en) 2021-08-09 2024-05-14 Tcl China Star Optoelectronics Technology Co., Ltd. Array base plate and manufacturing method therefor

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EP4050406A1 (en) 2022-08-31
US11676947B2 (en) 2023-06-13
US20210143134A1 (en) 2021-05-13
WO2021077354A1 (zh) 2021-04-29
JP2023506613A (ja) 2023-02-17
CN113168046B (zh) 2023-08-25
EP4050406A4 (en) 2022-11-02
JP7384335B2 (ja) 2023-11-21

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