CN113140620A - Wide bandgap semiconductor BPN/GaN heterojunction material and epitaxial growth method - Google Patents
Wide bandgap semiconductor BPN/GaN heterojunction material and epitaxial growth method Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims abstract description 46
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000008569 process Effects 0.000 claims abstract description 26
- 238000005516 engineering process Methods 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 28
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 22
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- 230000006911 nucleation Effects 0.000 claims description 12
- 238000010899 nucleation Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 8
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N phosphine group Chemical group P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 238000003780 insertion Methods 0.000 claims description 5
- 230000037431 insertion Effects 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 3
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- 239000010980 sapphire Substances 0.000 claims description 3
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical group CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 abstract description 70
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 11
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- 238000000151 deposition Methods 0.000 description 13
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- 230000000694 effects Effects 0.000 description 4
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Abstract
The invention discloses a wide bandgap semiconductor BPN/GaN heterojunction material and an epitaxial growth method, and mainly solves the problems of low polarization strength and two-dimensional electron gas concentration of the existing gallium nitride heterojunction material, complex epitaxial growth process and high control difficulty. The material structure comprises a substrate (1), a nucleating layer (2), a GaN channel layer (3), an AlN insert layer (4), a barrier layer (5) and a cap layer (6) from bottom to top, wherein the barrier layer adopts BP with 30-40% of P component and 10-30nm of thicknessxN1‑x(ii) a The cap layer is made of GaN or AlN with the thickness of 1-2nm, and the material layer structure is made of metal organic matterAnd growing by using a chemical vapor deposition technology. The gallium nitride heterojunction material has high polarization strength and high two-dimensional electron gas concentration, can improve the breakdown voltage and reliability of a gallium nitride device, has simple material growth process and low cost, and can be used for manufacturing a field effect transistor semiconductor device.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to a wide bandgap semiconductor BPN/GaN heterojunction material which can be used for manufacturing a field effect transistor semiconductor device.
Background
The III group nitride semiconductor material represented by GaN has important application value in high-frequency microwave power devices and high-efficiency power electronic devices. The GaN electronic device structure is mainly based on a nitride heterostructure, and the structural interface has two-dimensional electron gas with high surface density and high mobility, so that the working frequency and the output power density of the device can be effectively improved. In order to increase the output current and power density of the device, the polarization strength of the heterojunction barrier layer needs to be increased, and then higher two-dimensional electron gas surface density is obtained. The nitride heterostructure barrier layer is developed from a traditional AlGaN material to a smectic lattice matching InAlN and ScAlN material, so that the two-dimensional electronic air density is remarkably improved, the equal proportional reduction rule of the gate length and the barrier layer thickness of a device is met, and the working frequency of the device is enhanced.
At present, a conventional gallium nitride heterostructure is shown in fig. 1. The GaN-based solar cell comprises a substrate, a nucleating layer, a GaN channel layer, an AlN insert layer, an AlGaN or InAlN or ScAlN barrier layer from bottom to top. The material and the structure have the following disadvantages:
1. lattice mismatch exists in an AlGaN/GaN heterojunction material interface, a high-density dislocation defect is inevitably generated, the defect is used as a trap center to trap electrons to cause device current collapse, and meanwhile, the defect is used as a leakage channel to reduce the breakdown voltage of the device. In addition, the two-dimensional electron gas concentration generated by the polarization effect on the heterojunction interface of the material is not high enough, so that the proportional reduction of the length of a device gate and the thickness of a barrier layer and the improvement of the working frequency are limited;
2. tensile strain exists in the AlGaN/GaN heterojunction material barrier layer, and the inverse piezoelectric effect can be generated in the AlGaN barrier layer when the device works at high voltage for a long time, so that lattice defects are generated and the reliability of the device is reduced;
3. during InAlN/GaN heterojunction material epitaxial growth, the growth temperatures of an InAlN barrier layer and a GaN channel layer are different, the growth temperature and carrier gas switching are required to be changed by short pause and interval in the growth process, Ga element is diffused and combined to the InAlN barrier layer in the process, the heterojunction interface is deteriorated, and the current and power output characteristics of a device are influenced;
4. when the metal organic chemical vapor deposition of the ScAlN/GaN heterojunction material grows, equipment pipelines, a control system and a growth chamber thereof need to be modified, the Sc source conveying and reaction film forming are met, and the requirements on process equipment are high;
5. the barrier layer of the structure is not protected, and a surface state can be generated on the surface of the barrier layer, so that the concentration of two-dimensional electron gas is reduced, and the current and power output characteristics of a device are influenced.
Disclosure of Invention
The invention aims to provide a wide bandgap semiconductor BPN/GaN heterojunction material and an epitaxial growth method aiming at the defects of the prior art, so as to improve the polarization characteristic and the two-dimensional electron gas transport characteristic of a gallium nitride heterojunction, reduce the complexity of the epitaxial growth process of the material and meet the application requirement of a high-frequency microwave power device.
In order to achieve the purpose, the wide bandgap semiconductor BPN/GaN heterojunction material comprises a substrate 1, a nucleation layer 2, a GaN channel layer 3, an AlN insertion layer 4 and a barrier layer 5 from bottom to top, and is characterized in that:
the barrier layer 5 adopts a P component of 30-40%BP with thickness of 10nm-30nmxN1-x；
The upper part of the barrier layer 5 is provided with a cap layer 6 for protecting the barrier layer.
Further, the substrate 1 is made of any one of a sapphire material, a Si material, a SiC material, a GaN material, and an AlN material.
Further, the nucleation layer 2 is GaN or AlN.
Further, the cap layer 6 is GaN or AlN, and the thickness of the cap layer is 1nm-2 nm.
In order to achieve the purpose, the invention discloses a method for manufacturing a wide bandgap semiconductor (BPN)/GaN heterojunction material, which is characterized by comprising the following steps of:
1) placing the substrate in a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber, introducing a mixed gas of hydrogen and ammonia into the reaction chamber, and carrying out heat treatment and surface cleaning on the substrate;
2) growing an AlN nucleating layer or a GaN nucleating layer with the thickness of 60-120nm on the substrate after the heat treatment by adopting a metal organic chemical vapor deposition technology;
3) growing a GaN channel layer with the thickness of 0.5-4 mu m on the nucleation layer by adopting a metal organic chemical vapor deposition technology;
4) growing an AlN insert layer with the thickness of 1-1.5nm on the GaN channel layer by adopting a metal organic chemical vapor deposition technology;
5) adopting a metal organic chemical vapor deposition technology to grow a BPN barrier layer with the thickness of 10-30nm on the AlN insert layer;
6) and growing a GaN or AlN cap layer with the thickness of 1-2nm on the BPN barrier layer by adopting a metal organic chemical vapor deposition technology.
Compared with the prior art, the invention has the following advantages:
1. the invention adopts BPN as the gallium nitride heterojunction barrier layer, has wider band gap and stronger polarization effect, can effectively improve the concentration of heterojunction two-dimensional electron gas and the breakdown voltage of a device, can form lattice matching with a GaN channel material, reduces dislocation defects and inverse piezoelectric effect caused by lattice mismatch, and improves the breakdown voltage and reliability of the GaN HEMT device;
2. the invention adopts BPN as the gallium nitride heterojunction barrier layer, can produce high surface density two-dimensional electron gas under the thin thickness of the barrier layer, satisfy the high frequency device gate length and the equal proportional reduction rule of the thickness of the barrier layer;
3. the invention adopts the metal organic chemical vapor deposition technology for growth, the BPN barrier layer and the GaN channel do not need to change the temperature and stop growing, and the mutual diffusion of heterojunction interface elements and the difficulty of process control are reduced;
4. the invention adopts the metal organic chemical vapor deposition technology for growth, and does not need to modify equipment pipelines and a control system, so the material growth process is simple, the epitaxial cost is low, and the method is suitable for commercial batch production;
5. the barrier layer is protected by the cap layer, so that the influence of the surface state above the barrier layer can be improved, and the current and power output characteristics of the device can be improved.
Drawings
FIG. 1 is a schematic structural diagram of a conventional gallium nitride heterojunction material;
FIG. 2 is a schematic structural diagram of a wide bandgap semiconductor BPN/GaN heterojunction material of the present invention;
FIG. 3 is a schematic view of the growth process for fabricating a wide bandgap semiconductor BPN/GaN heterojunction material according to the present invention.
Detailed Description
Embodiments of the present invention are described in further detail below with reference to the accompanying drawings.
Referring to fig. 2, the wide bandgap semiconductor BPN/GaN heterojunction material of the present invention comprises, from bottom to top, a substrate 1, a nucleation layer 2, a GaN channel layer 3, an AlN insertion layer 4, a barrier layer 5, and a cap layer 6. Wherein the barrier layer 5 adopts BP with 30-40% of P component and 10-30nm of thicknessxN1-x(ii) a The substrate 1 is made of any one of sapphire material, Si material, SiC material, GaN material and AlN material; the nucleating layer 2 is GaN or AlN; the cap layer 6 is made of GaN or AlN with the thickness of 1nm-2nm and is used for protecting the barrier layer 5, preventing surface states from being introduced on the surface of the device, and improving the current and power output characteristics of the deviceAnd (4) sex.
Referring to FIG. 3, the invention provides the following three examples for manufacturing wide bandgap semiconductor BPN/GaN heterojunction materials.
Embodiment one, SiC-based BP with 34% of growth barrier layer P composition, 20nm thickness and 2nm GaN cap layer thickness0.34N0.66a/GaN heterojunction material.
Step one, heat treatment and surface cleaning are performed on the substrate, as shown in fig. 3 (a).
Placing the SiC substrate in a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber, setting the temperature of the reaction chamber to be 1100 ℃, introducing mixed gas of hydrogen and ammonia gas into the reaction chamber, keeping the vacuum degree of the reaction chamber at 40Torr, standing for 10min, and finishing the heat treatment and surface cleaning of the SiC substrate.
Step two, the AlN nucleation layer is epitaxial, as in fig. 3 (b).
And (3) extending an AlN nucleating layer with the thickness of 90nm on the SiC substrate by using a metal organic chemical vapor deposition technology.
The process conditions adopted by the epitaxial AlN nucleating layer are as follows: the growth temperature is 600 ℃, the pressure is 40Torr, the flow of ammonia gas is 3000sccm, the flow of an aluminum source is 20sccm, and the flow of hydrogen is 2000sccm, wherein the aluminum source adopts trimethylaluminum.
And step three, extending the GaN channel layer, as shown in figure 3 (c).
A GaN channel layer with a thickness of 2.6 μm was deposited on the AlN nucleation layer using a metal organic chemical vapor deposition technique.
The epitaxial GaN channel layer adopts the following process conditions: the growth temperature is 1100 ℃, the pressure is 40Torr, the flow of ammonia gas is 3000sccm, the flow of a gallium source is 90sccm, and the flow of hydrogen is 2000sccm, wherein the gallium source adopts triethyl gallium.
Step four, the AlN insert layer is epitaxial, as shown in FIG. 3 (d).
An AlN insertion layer with a thickness of 1.2nm was deposited on the GaN channel layer using a metal organic chemical vapor deposition technique.
The process conditions for depositing the AlN insert layer are as follows: the temperature is 1100 ℃, the pressure is 40Torr, the flow of an aluminum source is 6sccm, the flow of ammonia gas is 3000sccm, and the flow of hydrogen gas is 2000sccm, wherein the aluminum source adopts trimethylaluminum.
Step five, extending the BPN barrier layer, as shown in FIG. 3 (e).
BP with 20nm thickness and 34% P component was deposited on the AlN insert layer using a MOCVD technique0.34N0.66A barrier layer.
The process conditions for depositing the BPN barrier layer are as follows: the temperature is 1100 ℃, the pressure is 400Torr, the flow of a boron source is 20 mu mol/min, the flow of a phosphorus source is 30 mu mol/min, the flow of ammonia gas is 3000sccm, and the flow of hydrogen gas is 2000sccm, wherein the boron source adopts triethylboron, and the phosphorus source adopts tertiary phosphine R-3P.
Step six, the GaN cap layer is epitaxially grown, as shown in FIG. 3 (f).
And growing a GaN cap layer with the thickness of 2nm on the BPN barrier layer by using a metal organic chemical vapor deposition technology.
The epitaxial GaN cap layer adopts the following process conditions: the temperature is 1100 ℃, the pressure is 40Torr, the flow of the gallium source is 90sccm, the flow of the ammonia gas is 3000sccm, and the flow of the hydrogen gas is 2000sccm, thus completing the material preparation, wherein the gallium source adopts triethyl gallium.
Example two, the composition of the growth barrier layer P is 30%, the thickness is 10nm, the GaN cap layer is 1nm, and the Si-based BP0.3N0.7a/GaN heterojunction material.
And (2) placing the Si substrate in a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber, setting the temperature to be 1150 ℃, introducing mixed gas of hydrogen and ammonia into the reaction chamber, keeping the vacuum degree of the reaction chamber at 50Torr, and standing for 15min to finish the heat treatment and surface cleaning of the Si substrate.
Setting the process conditions of 650 ℃ of the reaction chamber, 50Torr of pressure, 3000sccm of ammonia gas, 20sccm of aluminum source and 2000sccm of hydrogen gas, and depositing an AlN nucleating layer with the thickness of 120nm on the Si substrate by using a metal organic chemical vapor deposition technology, wherein the aluminum source adopts trimethyl aluminum.
Setting the process conditions of the temperature of the reaction chamber at 1150 ℃, the pressure at 50Torr, the flow of ammonia gas at 3000sccm, the flow of the gallium source at 200sccm and the flow of hydrogen at 2000sccm, and depositing a GaN channel layer with the thickness of 4 microns on the AlN nucleating layer by using a metal organic chemical vapor deposition technology, wherein the gallium source adopts triethyl gallium.
Setting the process conditions of the temperature of the reaction chamber at 1150 ℃, the pressure at 50Torr, the flow of an aluminum source at 10sccm, the flow of ammonia at 3000sccm and the flow of hydrogen at 2000sccm, and depositing an AlN insert layer with the thickness of 1.5nm on the GaN channel layer by using a metal organic chemical vapor deposition technology, wherein the aluminum source adopts trimethylaluminum.
Setting the process conditions of the temperature of the reaction chamber at 1150 ℃, the pressure at 200Torr, the flow of the boron source at 10 mu mol/min, the flow of the phosphorus source at 20 mu mol/min, the flow of the ammonia gas at 3000sccm and the flow of the hydrogen gas at 2000sccm, and depositing BP with the thickness of 10nm and the P component of 30 percent on the AlN insert layer by using a metal organic chemical vapor deposition technology0.3N0.7And the barrier layer, wherein the boron source adopts triethyl boron, and the phosphorus source adopts tertiary phosphine R-3P.
Setting the process conditions of the temperature of the reaction chamber at 1150 ℃, the pressure at 50Torr, the gallium source flow at 200sccm, the ammonia gas flow at 3000sccm and the hydrogen flow at 2000sccm, and growing a GaN cap layer with the thickness of 1nm on the BPN barrier layer by using a metal organic chemical vapor deposition technology, wherein the gallium source adopts triethyl gallium.
Third embodiment, the self-supporting GaN-based BP with the growth barrier layer P with the composition of 40 percent, the thickness of 30nm and the AlN cap layer with the thickness of 1nm0.4N0.6a/GaN heterojunction material.
Step a, heat treatment and surface cleaning are performed on the substrate, as shown in fig. 3 (a).
Placing the self-supporting gallium nitride substrate in a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber, setting the temperature of the reaction chamber to be 1200 ℃, introducing mixed gas of hydrogen and ammonia into the reaction chamber, keeping the vacuum degree of the reaction chamber at 60Torr, standing for 20min, and finishing the heat treatment and surface cleaning of the self-supporting gallium nitride substrate.
Step B, a GaN nucleation layer is deposited, as in fig. 3 (B).
By using a metal organic chemical vapor deposition technology, a GaN nucleating layer with the thickness of 60nm is deposited on a self-supporting gallium nitride substrate under the process conditions that the temperature of a reaction chamber is 1000 ℃, the pressure is 60Torr, the flow of ammonia gas is 3000sccm, the flow of a gallium source is 120sccm and the flow of hydrogen gas is 2000sccm, wherein the gallium source adopts triethyl gallium.
Step C, depositing a GaN channel layer, as shown in fig. 3 (C).
And depositing a GaN channel layer with the thickness of 500nm on the AlN nucleating layer by using a metal organic chemical vapor deposition technology under the process conditions that the temperature of a reaction chamber is 1200 ℃, the pressure is 60Torr, the flow of ammonia gas is 3000sccm, the flow of a gallium source is 120sccm and the flow of hydrogen gas is 2000sccm, wherein the gallium source adopts triethyl gallium.
Step D, depositing an AlN insert layer, as shown in FIG. 3 (D).
And depositing an AlN insert layer with the thickness of 1nm on the GaN channel layer by using a metal organic chemical vapor deposition technology under the process conditions that the temperature of a reaction chamber is 1200 ℃, the pressure is 60Torr, the flow of an aluminum source is 3sccm, the flow of ammonia gas is 3000sccm and the flow of hydrogen gas is 2000sccm, wherein the aluminum source adopts trimethylaluminum.
Step E, deposit BPN barrier layer, as in figure 3 (E).
Depositing BP with the thickness of 30nm and the P component of 40% on the AlN insert layer by using a metal organic chemical vapor deposition technology under the process conditions that the temperature of a reaction chamber is 1200 ℃, the pressure is 600Torr, the flow rate of a boron source is 30 mu mol/min, the flow rate of a phosphorus source is 50 mu mol/min, the flow rate of ammonia gas is 3000sccm and the flow rate of hydrogen gas is 2000sccm0.4N0.6And the barrier layer, wherein the boron source adopts triethyl boron, and the phosphorus source adopts tertiary phosphine R-3P.
Step F, deposit AlN cap layer, as in figure 3 (F).
And (2) growing an AlN cap layer with the thickness of 1nm on the BPN barrier layer by using a metal organic chemical vapor deposition technology under the process conditions that the temperature of a reaction chamber is 1200 ℃, the pressure is 60Torr, the flow of an aluminum source is 3sccm, the flow of ammonia gas is 3000sccm and the flow of hydrogen gas is 2000sccm, wherein the aluminum source adopts trimethyl aluminum.
The foregoing description is only exemplary of the invention and is not intended to limit the invention, and it will be apparent to those skilled in the art that various changes and modifications in form and detail may be made without departing from the principles and arrangements of the invention, but these changes and modifications are within the scope of the invention as defined in the appended claims.
Claims (10)
1. A wide bandgap semiconductor BPN/GaN heterojunction material comprises a substrate (1), a nucleation layer (2), a GaN channel layer (3), an AlN insertion layer (4) and a barrier layer (5) from bottom to top, and is characterized in that:
the barrier layer (5) adopts BP with 30-40% of P component and 10-30nm of thicknessxN1-x；
And the upper part of the barrier layer (5) is provided with a cap layer (6) for protecting the barrier layer.
2. The material of claim 1, wherein: the substrate (1) is made of any one of a sapphire material, a Si material, a SiC material, a GaN material and an AlN material.
3. The material of claim 1, wherein: the nucleation layer (2) is GaN or AlN.
4. The material of claim 1, wherein: the cap layer (6) is GaN or AlN, and the thickness of the cap layer is 1nm-2 nm.
5. A method for manufacturing a wide bandgap semiconductor (BPN)/GaN heterojunction material is characterized by comprising the following steps of:
1) placing the substrate in a Metal Organic Chemical Vapor Deposition (MOCVD) reaction chamber, introducing a mixed gas of hydrogen and ammonia into the reaction chamber, and carrying out heat treatment and surface cleaning on the substrate;
2) growing an AlN nucleating layer or a GaN nucleating layer with the thickness of 60-120nm on the substrate after the heat treatment by adopting a metal organic chemical vapor deposition technology;
3) growing a GaN channel layer with the thickness of 0.5-4 mu m on the nucleation layer by adopting a metal organic chemical vapor deposition technology;
4) growing an AlN insert layer with the thickness of 1-1.5nm on the GaN channel layer by adopting a metal organic chemical vapor deposition technology;
5) adopting a metal organic chemical vapor deposition technology to grow a BPN barrier layer with the thickness of 10-30nm on the AlN insert layer;
6) and growing a GaN or AlN cap layer with the thickness of 1-2nm on the BPN barrier layer by adopting a metal organic chemical vapor deposition technology.
6. The method as claimed in claim 5, wherein the substrate is heat-treated and surface-cleaned in 1) by placing the substrate in a MOCVD reaction chamber at 1100-1200 ℃ and introducing a mixed gas of hydrogen and ammonia for 10-20min to make the degree of vacuum of the reaction chamber 40-60 Torr.
7. The method of claim 5, wherein:
the process conditions for growing the nucleation layer by adopting MOCVD in the step 2) are as follows: under the condition that the temperature is 600-1000 ℃, the vacuum degree of the reaction chamber is 40-60Torr, the flow of the gallium source is 90-120sccm, and the flow of the aluminum source is 3-20 sccm;
the process conditions for growing the cap layer by adopting MOCVD in the step 6) are as follows: the vacuum degree of the reaction chamber is 40-60Torr, the gallium source flow is 90-200sccm, the aluminum source flow is 3-20sccm, the temperature is 1100-1200 ℃, the ammonia gas flow is 3000sccm, and the hydrogen gas flow is 2000 sccm;
the gallium sources are all selected from triethyl gallium, and the aluminum sources are all selected from trimethyl aluminum.
8. The method of claim 5, wherein: the process conditions for growing the GaN channel layer by adopting MOCVD in the step 3) are as follows: the temperature is 1100-1200 ℃, the vacuum degree of the reaction chamber is 40-60Torr, the flow of the gallium source is 90-200sccm, the flow of the ammonia gas is 3000sccm, the flow of the hydrogen gas is 2000sccm, and the gallium source is selected from triethyl gallium.
9. The method of claim 5, wherein: the process conditions for growing the AlN insert layer by adopting MOCVD in the step 4) are as follows: the temperature is 1100-1200 ℃, the vacuum degree of the reaction chamber is 40-60Torr, the flow of an aluminum source is 3-10sccm, the flow of ammonia gas is 3000sccm, the flow of hydrogen is 2000sccm, and the aluminum source is selected from trimethylaluminum.
10. The method of claim 5, wherein: the process conditions for growing the BPN barrier layer by adopting MOCVD in the step 5) are as follows:
the vacuum degree of the reaction chamber is 200-;
the boron source is selected from triethylboron;
the phosphorus source is selected from tertiary phosphine R-3P.
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