CN113136567B - Thin film deposition device and method for improving uniformity of cavity airflow - Google Patents
Thin film deposition device and method for improving uniformity of cavity airflow Download PDFInfo
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- CN113136567B CN113136567B CN202110269674.1A CN202110269674A CN113136567B CN 113136567 B CN113136567 B CN 113136567B CN 202110269674 A CN202110269674 A CN 202110269674A CN 113136567 B CN113136567 B CN 113136567B
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- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000000427 thin-film deposition Methods 0.000 title claims description 26
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 239000000919 ceramic Substances 0.000 claims abstract description 13
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 238000005192 partition Methods 0.000 claims description 77
- 239000007789 gas Substances 0.000 claims description 62
- 239000010408 film Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 238000005086 pumping Methods 0.000 claims description 8
- 238000007736 thin film deposition technique Methods 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010909 process residue Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to a film deposition device and a method for improving the uniformity of cavity airflow, wherein the film deposition device comprises a cavity, a first chamber, a second chamber, air inlets arranged above the first chamber and the second chamber, and a pump air inlet arranged at the center of the lower part of the cavity, wherein the pump air inlet is communicated with the first chamber and the second chamber and is connected with a pump, the structure in the first chamber is the same as that in the second chamber, and the film deposition device also comprises: a base plate is loaded on the heating plate, a support pillar is arranged on one side of the heating plate, which is far away from the base plate, and the support pillar is positioned at the center of the heating plate; the ceramic rings are arranged on the side walls of the first chamber and the second chamber; first baffle sets up in one side that the heating plate deviates from the base plate, is equipped with the first hole that passes on the first baffle, and the support column passes the first hole that passes, is equipped with the interval between first baffle and the heating plate. The film deposition device enables the exhaust flow rate of the pump to be controllable, enables the pressure and the air flow in the cavity to be uniform, optimizes the uniformity of the film, improves the exhaust flow rate of the pump and reduces residues.
Description
Technical Field
The invention relates to the technical field of chemical vapor deposition equipment, in particular to a film deposition device and method for improving the uniformity of cavity airflow.
Background
The existing chemical vapor deposition equipment comprises a cavity, a gas distribution mechanism and a substrate supporting seat, wherein at least one air suction hole is formed in the bottom of the cavity, a pump ring surrounding the substrate supporting seat is arranged, an exhaust channel is formed between the pump ring and a cavity bottom plate, and a plurality of air equalizing holes are formed in the pump ring. The pump ring of the chemical vapor deposition equipment is provided with a plurality of uniform air holes, so that the flow resistance is increased, the exhaust speed of the pump is reduced, the capacity is reduced, and the residues are increased.
Therefore, there is a need to develop a thin film deposition apparatus and method for improving uniformity of chamber gas flow, so as to control the flow rate of the pump gas flow, make the pressure and gas flow in the chamber uniform, optimize the uniformity of the thin film, improve the flow rate of the pump gas flow, and reduce the residue.
Disclosure of Invention
The present invention is directed to solving one of the technical problems of the prior art or the related art.
Therefore, the invention provides a film deposition device and a method for improving the uniformity of the airflow in the cavity.
In view of the above, an aspect of the present invention provides a thin film deposition apparatus for improving uniformity of gas flow in a chamber, the thin film deposition apparatus including a chamber including a first chamber and a second chamber, a gas inlet disposed above the first chamber and the second chamber, and a pump gas inlet disposed at a lower center of the chamber, the pump gas inlet communicating with the first chamber and the second chamber and being connected to a pump, a structure in the first chamber being the same as a structure in the second chamber, the thin film deposition apparatus further including:
the heating plate is provided with a bearing substrate, one side of the heating plate, which is far away from the substrate, is provided with a support pillar, and the support pillar is positioned at the center of the heating plate;
a ceramic ring disposed on sidewalls of the first and second chambers;
first baffle, set up in the heating plate deviates from one side of base plate, be equipped with on the first baffle and pass the hole, the support column passes first passing the hole, first baffle with be equipped with the interval between the heating plate.
Further, the thin film deposition apparatus further includes:
the second partition plate is arranged on one side, away from the heating plate, of the first partition plate, the second partition plate is arranged in a manner of being tightly attached to the first partition plate, a second through hole is formed in the second partition plate, and the support column penetrates through the second through hole;
the second partition plate comprises an upper surface, a lower surface and inclined planes which are connected with the upper surface and the lower surface, the inclined planes at least comprise a first inclined plane and a second inclined plane, one of the inclined planes is close to the pumping air inlet, and the inclined plane of the second partition plate and the ceramic ring form an annular gap.
Furthermore, the second partition board is made of aluminum.
Further, the second partition plate includes a plurality of second partition plates.
Further, the thin film deposition apparatus further includes:
the first annular plate is arranged on one side, away from the first partition plate, of the second partition plate, a first annular channel is formed by the first annular plate and the side wall of the first chamber, and the supporting column penetrates through the first annular plate.
Further, the thin film deposition apparatus further includes:
the second annular plate is arranged on one side, away from the second partition plate, of the first annular plate, a second annular channel is formed by the second annular plate and the side wall of the first chamber, and the supporting column penetrates through the second annular plate;
wherein the width of the second annular channel is greater than the width of the first annular channel.
Furthermore, the first partition plate is made of ceramic.
Further, the first partition plate includes a plurality of first partition plates.
In another aspect of the present invention, a thin film deposition method for improving uniformity of a gas flow in a chamber is provided, where the thin film deposition method includes:
the reaction gas enters the cavity through the gas inlet to form a film on the surface of the substrate;
the residual gas is exhausted through the pump exhaust port.
Further, the residual gas is finally discharged from the pump gas port through the annular gap, the first annular passage and the second annular passage.
The technical scheme provided by the embodiment of the invention can have the following beneficial effects:
the first partition plate and the side wall of the first chamber form an annular gap, air flow and pressure of the base plate can be uniformly controlled, uniformity of the thin film is optimized, the included angle between the first inclined surface and the lower surface is smaller than that between the second inclined surface and the lower surface, exhaust is more uniform, the flow rate of pump exhaust can be controlled by changing the included angle between the first inclined surface and the lower surface, and residues can be reduced by improving the flow rate of the pump exhaust.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments or prior art solutions of the present invention, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a schematic view of a thin film deposition apparatus for improving uniformity of gas flow in a chamber according to an embodiment of the present invention;
FIG. 2 shows a schematic view of the arrangement of a second baffle according to one embodiment of the invention;
FIG. 3 illustrates a partial schematic view of the first angled surface at a different angle to the lower surface to control airflow in accordance with one embodiment of the present invention;
FIG. 4a shows a top view of a first separator plate according to one embodiment of the invention;
FIG. 4b shows a side view of a first baffle according to one embodiment of the invention;
FIG. 5a shows a top view of a second separator plate according to one embodiment of the invention;
FIG. 5b shows a side view of a second spacer plate according to an embodiment of the invention;
FIG. 6a shows a combined top view of a first separator plate and a second separator plate according to one embodiment of the invention;
FIG. 6b shows a combined side view of a first separator plate and a second separator plate according to one embodiment of the invention;
FIG. 7 is a flow chart illustrating steps of a thin film deposition method for improving chamber gas flow uniformity, according to an embodiment of the present invention.
Wherein, the correspondence between the reference numbers and the part names in fig. 1 to 6b is:
1 chamber, 101 first chamber, 102 second chamber, 2 base plate, 3 heating disk, 4 first baffle, 401 first baffle, 5 second baffle, 501 upper surface, 502 lower surface, 503 first incline, 504 second incline, 505 second baffle, 6 first annular channel, 7 second annular channel, 8 annular gap, 9 pump inlet, 10 inlet, 11 support column, 12 first incline angle, 13 second incline angle, 14 first annular plate, 15 second annular plate, 16 ceramic ring.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. The following description refers to the accompanying drawings in which the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
Example 1
FIG. 1 is a schematic diagram of a thin film deposition apparatus for improving uniformity of gas flow in a chamber according to an embodiment of the present invention.
As shown in fig. 1, the present embodiment provides a thin film deposition apparatus for improving uniformity of chamber gas flow, the thin film deposition apparatus comprising a chamber 1, the chamber 1 comprising a first chamber 101 and a second chamber 102, a gas inlet 10 disposed above the first chamber 101 and the second chamber 102, a pump gas inlet 9 disposed at a lower center of the chamber 1, the pump gas inlet 9 communicating with the first chamber 101 and the second chamber 102 and connected to a pump, a structure in the first chamber 101 being the same as a structure in the second chamber 102, and the thin film deposition apparatus further comprising:
the heating plate 3 is provided with a bearing substrate 2, one side of the heating plate 3, which is far away from the substrate 2, is provided with a support column 11, and the support column 11 is positioned at the center of the heating plate 3;
a ceramic ring 16 disposed on sidewalls of the first and second chambers 101 and 102;
The mixed reaction gas enters the cavity 1 through the gas inlet 10 and reacts on the substrate 2 to form a film, so that the gas flow and the pressure at the position of the substrate 2 can be uniformly controlled, the uniformity of the film on the substrate 2 is optimized, and the film quality is improved.
It should be noted that the ceramic ring 16 is detachably connected to the side walls of the first chamber 101 and the second chamber 102, and plays a role in heat preservation and heat insulation for the chamber 1, so as to effectively control the temperature in the chamber 1, improve the stability of the thin film deposition process, and facilitate the detachment and installation operations of the chamber components such as the partition plate below the chamber 1, the heating plate 3, and the like according to the detachable characteristic.
FIG. 2 shows a schematic view of the arrangement of a second partition according to one embodiment of the invention; FIG. 3 illustrates a partial schematic view of the first angled surface at a different angle to the lower surface to control airflow in accordance with one embodiment of the present invention; FIG. 5b shows a side view of a second baffle according to one embodiment of the invention.
As shown in fig. 2, 3 and 5b, the thin film deposition apparatus further includes:
the second partition plate 5 is arranged on one side, away from the heating plate 3, of the first partition plate 4, the second partition plate 5 is arranged in a clinging mode with the first partition plate 4, a second through hole is formed in the second partition plate 5, and the supporting column 11 penetrates through the second through hole;
wherein the second partition 5 comprises an upper surface 501, a lower surface 502 and inclined surfaces connecting the upper surface 501 and the lower surface 502, the inclined surfaces at least comprising a first inclined surface 503 and a second inclined surface 504, one of the inclined surfaces being arranged adjacent to the pump exhaust port 9, the inclined surface of the second partition 5 and the ceramic ring 16 forming an annular gap 8.
In this embodiment, the second inclined plane 504 is far away from the pumping port 9, and the included angle between the first inclined plane 503 and the lower surface 502 is smaller than the included angle between the second inclined plane 504 and the lower surface 502, so that the exhaust is more uniform, and the exhaust flow rate of the pump can be controlled by changing the included angle between the first inclined plane 503 and the lower surface 502, so as to improve the exhaust flow rate of the pump and reduce the residue, wherein in the prior art, at least one pumping hole is formed at the bottom of the cavity, a pumping ring surrounding the substrate supporting seat is formed, an exhaust channel is formed between the pumping ring and the bottom plate of the cavity, and a plurality of air-equalizing holes are formed on the pumping ring.
It should be noted that the angle between the first angled face 503 adjacent to the pump gas port 9 and the lower face 502 is smaller than the angle between the second angled face 504 remote from the pump gas port 9 and the lower face 502, so that the gap adjacent to the pump gas port 9 is narrower than the gap remote from the pump gas port 9, thereby providing more uniform gas flow and pressure.
Specifically, as will be described with reference to fig. 2 and 5b, if the angle between the first inclined surface 503 and the lower surface 502 is smaller than the angle between the second inclined surface 504 and the lower surface 502, the gap on the side close to the pump air inlet 9 is smaller than the gap on the side far from the pump air inlet 9 as shown in fig. 2, (where the edge angle of each second partition plate 505 may be different) so that the flow resistance close to the pump air inlet 9 is larger than the flow resistance far from the pump air inlet 9, which makes up the defect of large pumping speed near the pump air inlet 9, and makes the air flow discharge speed along the annular gap 8 almost the same, and the air flows of the inlet air and the outlet air in the cavity 1 are uniformly distributed in an annular shape, thereby reducing the pressure gradient difference generated by the non-uniform air flow speed, and effectively controlling the pressure in the cavity 1 to be uniform.
Further, the change of the angles of the first inclination angle 12 and the second inclination angle 13 in fig. 3 illustrates that the opening size of the annular gap 8 is controlled by the change of the angle, thereby controlling the air flow velocity.
Further, the material of the second partition plate 5 is aluminum.
The material is aluminum, on one hand, the material is the same as that of the cavity 1, an aluminum oxide layer formed on the surface is stable, the introduction of impurity elements in the film deposition process is prevented, and on the other hand, the aluminum processing is convenient and the cost is low.
FIG. 5a shows a top view of a second separator plate according to one embodiment of the invention.
As shown in fig. 5a, the second partition 5 includes a plurality of second partition plates 505.
The combination of the second partition plates 505 facilitates the replacement of the second partition plates 505, increases the flexibility of controlling the edges of the second partition plates 5 at different angles, effectively meets the requirements of different processes on air flow distribution, and is convenient to disassemble and assemble.
The combination manner of the plurality of second partition plates 505 may be a protrusion and groove connection manner, or the second partition plates 505 may be adjacent to each other and flatly laid on the first ring plate 14 below the second partition plate 5.
Further, the thin film deposition apparatus further includes:
the first annular plate 14 is arranged on one side, away from the first partition plate 4, of the second partition plate 5, the first annular plate 14 and the side wall of the first chamber 101 form a first annular channel 6, and the support column 11 penetrates through the first annular plate 14.
Further, the thin film deposition apparatus further includes:
the second annular plate 15 is arranged on one side, away from the second partition plate 5, of the first annular plate 14, the second annular plate 15 and the side wall of the first chamber 101 form a second annular channel 7, and the supporting column 11 penetrates through the second annular plate;
wherein the width of the second annular channel 7 is larger than the width of the first annular channel 6.
In which, if the pump gas port 9 is provided directly below the annular gap 8, a greater gas flow velocity occurs on the side of the pump gas port 9 than on the side remote from the pump gas port 9, although this can be improved by the angle of the second partition 5, but there is a higher risk of gas flow velocity eccentricity, and the risk of gas flow velocity eccentricity being reduced by the addition of the first annular channel 6 and the second annular channel 7, which can be balanced in a gas flow annular motion.
It should be noted that the width of the second annular channel 7 is greater than the width of the first annular channel 6, and it can be found that the width of the second annular channel 7 is greater than the width of the first annular channel 6 according to PV = nRT, and the pressure of the second annular channel 7 is lower than the pressure of the first annular channel 6, so as to firstly facilitate the downward movement of the chamber residue, reduce the accumulation of the process residue in the chamber and reduce the particle size on the surface of the film, and secondly facilitate the horizontal movement of the gas flow in the second annular channel 7 due to the pressure change to equalize the gas flow speed of the first annular channel 6 with the gas flow speed of the second annular channel 7, so that the gas flow and pressure in the chamber 1 can be uniform and the film uniformity can be optimized.
FIG. 4a shows a top view of a first separator plate according to one embodiment of the invention; FIG. 4b shows a side view of a first baffle according to one embodiment of the invention.
As shown in fig. 4a and 4b, the first separator 4 is made of ceramic.
The first partition plate 4 is made of ceramic materials, plays a role in heat preservation and heat insulation for the cavity 1, effectively controls the temperature in the cavity 1, and improves the stability of a thin film deposition process.
Further, the first partition plate 4 includes a plurality of first partition plates 401.
The combination of the first partition boards 401 effectively reduces the defects and even the cracks of the first partition board 4 caused by the thermal stress generated by the first partition board 4 under the high temperature condition in the film deposition process, and is convenient to disassemble and assemble.
It should be noted that the combination manner of the plurality of first partition plates 401 is the same as the combination manner of the plurality of second partition plates 505, and the description thereof is omitted.
FIG. 6a shows a combined top view of a first separator plate and a second separator plate according to one embodiment of the invention; FIG. 6b shows a combined side view of the first separator plate and the second separator plate according to one embodiment of the invention.
As shown in fig. 6a and 6b, the first partition board 4 and the second partition board 5 are generally circular, the first partition board 4 includes an upper wall, a lower wall and a side wall connecting the upper wall and the lower wall, the upper wall and the lower wall of the first partition board 4 are identical in shape and size, the side wall forms an angle of 90 ° with the lower wall, the upper surface 501 and the upper wall of the second partition board 5 are identical in shape and size, the lower surface 502 is larger in size than the upper surface 501, and the angles between the first inclined surface 503 and the second inclined surface 504 and the lower surface 502 are smaller than 90 °.
Wherein, through changing the angle of the edge of the second baffle 5, as shown in fig. 2, the opening size of the annular gap 8 formed between the second baffle and the bottom of the ceramic ring 16 in the cavity 1 is changeable, thus the gas flow resistance can be changed by changing the angle, the second baffle 5 can be composed of a plurality of second baffle plates 505 with different angles, the size of the regional opening of the annular gap 8 is different, and then the gas flow rate is changed, the gas flow discharge speed along the annular gap 8 is almost the same, and the uniformity of the gas flow is effectively improved.
Example 2
FIG. 7 is a flow chart illustrating steps of a thin film deposition method for improving chamber gas flow uniformity, according to an embodiment of the present invention.
As shown in fig. 7, the present embodiment provides a thin film deposition method for improving uniformity of gas flow in a chamber, and the thin film deposition method using the thin film deposition apparatus of embodiment 1 includes:
step 1, enabling reaction gas to enter a cavity through a gas inlet to form a thin film on the surface of a substrate;
and 2, exhausting the residual gas through a pump air outlet.
Wherein the residual gas is finally exhausted by the pump exhaust port through the annular gap, the first annular channel and the second annular channel.
Through changing the angle between the first inclined surface and the lower surface in the second partition plate, the exhaust flow rate of the pump is controllable, the pressure and the air flow of the cavity are uniform, the uniformity of the film can be optimized on one hand, and the residues can be reduced on the other hand.
Specifically, by changing the angle of the edge of the second partition plate 5, as shown in fig. 2, the opening size of the annular gap 8 formed between the second partition plate 5 and the cavity 1 is variable, so that the flow resistance of the gas can be changed by changing the angle, and the second partition plate 5 can be composed of a plurality of second partition plates 505 with different angles, so that the size of the regional opening of the annular gap 8 is different, and the flow rate of the gas is further changed.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It is to be understood that the present invention is not limited to what has been described above, and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (9)
1. The utility model provides an improve film deposition device of cavity air current homogeneity, film deposition device includes the cavity, the cavity includes first room and second chamber, set up in the first room with the air inlet of second chamber top, set up in the pump gas port of cavity lower part center department, pump gas port intercommunication the first room with the second chamber to be connected with the pump, first indoor structure with the structure in the second chamber is the same, its characterized in that, film deposition device still includes:
the heating plate is provided with a bearing substrate, one side of the heating plate, which is far away from the substrate, is provided with a support pillar, and the support pillar is positioned at the center of the heating plate;
a ceramic ring disposed on sidewalls of the first and second chambers;
the first partition plate is arranged on one side, away from the base plate, of the heating plate, a first through hole is formed in the first partition plate, the supporting column penetrates through the first through hole, and a space is formed between the first partition plate and the heating plate;
the second partition plate is arranged on one side, away from the heating plate, of the first partition plate, the second partition plate is arranged in a manner of being tightly attached to the first partition plate, a second through hole is formed in the second partition plate, and the support column penetrates through the second through hole;
the second partition plate comprises an upper surface, a lower surface and an inclined surface connecting the upper surface and the lower surface, the inclined surface at least comprises a first inclined surface and a second inclined surface, one of the inclined surfaces is arranged close to the pump air inlet, and the inclined surface of the second partition plate and the ceramic ring form an annular gap;
the second inclined plane is far away from the setting of the pumping air port, and the included angle of the first inclined plane and the lower surface is smaller than that of the second inclined plane and the lower surface.
2. The apparatus of claim 1, wherein the second partition plate is made of aluminum.
3. The thin film deposition apparatus for improving chamber gas flow uniformity as claimed in claim 1, wherein the second partition plate comprises a plurality of second partition plates.
4. The thin film deposition apparatus for improving the uniformity of the chamber gas flow according to claim 1, further comprising:
the first annular plate is arranged on one side, away from the first partition plate, of the second partition plate, a first annular channel is formed by the first annular plate and the side wall of the first chamber, and the supporting column penetrates through the first annular plate.
5. The thin film deposition apparatus for improving the uniformity of the chamber gas flow according to claim 4, further comprising:
the second annular plate is arranged on one side, away from the second partition plate, of the first annular plate, a second annular channel is formed by the second annular plate and the side wall of the first chamber, and the supporting column penetrates through the second annular plate;
wherein the width of the second annular channel is greater than the width of the first annular channel.
6. The thin film deposition apparatus for improving chamber gas flow uniformity as claimed in any one of claims 1 to 5, wherein the first partition plate is made of ceramic.
7. The thin film deposition apparatus for improving chamber gas flow uniformity as claimed in any one of claims 1 to 5, wherein the first partition plate comprises a plurality of first partition plates.
8. A thin film deposition method for improving uniformity of chamber gas flow, which uses the thin film deposition apparatus for improving uniformity of chamber gas flow according to any one of claims 1 to 5, wherein the thin film deposition method comprises:
the reaction gas enters the cavity through the gas inlet, and a film is formed on the surface of the substrate;
the residual gas is exhausted through the pump exhaust port.
9. The method of claim 8, wherein the residual gas is finally exhausted from the pump exhaust port through the annular gap, the first annular channel and the second annular channel.
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| CN202110269674.1A CN113136567B (en) | 2021-03-12 | 2021-03-12 | Thin film deposition device and method for improving uniformity of cavity airflow |
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| CN202110269674.1A CN113136567B (en) | 2021-03-12 | 2021-03-12 | Thin film deposition device and method for improving uniformity of cavity airflow |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104756244A (en) * | 2012-10-16 | 2015-07-01 | Lg矽得荣株式会社 | Susceptor for epitaxial growing and method for epitaxial growing |
| CN105143507A (en) * | 2013-02-21 | 2015-12-09 | 阿尔塔科技半导体公司 | Chemical vapor deposition device |
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| TWI232509B (en) * | 2001-07-25 | 2005-05-11 | Tokyo Electron Ltd | Processing apparatus and processing method |
| JP3962722B2 (en) * | 2003-12-24 | 2007-08-22 | 三菱重工業株式会社 | Plasma processing equipment |
| US20050196971A1 (en) * | 2004-03-05 | 2005-09-08 | Applied Materials, Inc. | Hardware development to reduce bevel deposition |
| TWI453295B (en) * | 2012-10-12 | 2014-09-21 | Iner Aec Executive Yuan | Gas isolation chamber and plasma deposition apparatus thereof |
| CN108315720A (en) * | 2018-01-31 | 2018-07-24 | 上海集成电路研发中心有限公司 | A kind of device and method improving film thickness uniformity |
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| CN105143507A (en) * | 2013-02-21 | 2015-12-09 | 阿尔塔科技半导体公司 | Chemical vapor deposition device |
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