CN113130315A - Thinning processing method of semiconductor - Google Patents
Thinning processing method of semiconductor Download PDFInfo
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- CN113130315A CN113130315A CN202010037685.2A CN202010037685A CN113130315A CN 113130315 A CN113130315 A CN 113130315A CN 202010037685 A CN202010037685 A CN 202010037685A CN 113130315 A CN113130315 A CN 113130315A
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- semiconductor
- deionized water
- thinning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Abstract
The invention relates to the technical field of semiconductors, and discloses a thinning treatment method of a semiconductor.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a thinning processing method of a semiconductor.
Background
The semiconductor back process is a technology mainly based on semiconductor thickness reduction by physical mechanical grinding after metal wiring is completed on the front side of a semiconductor, and is one of important technologies for reducing electric energy loss of a power device and improving electric energy utilization rate of an electronic product. For a long time, only a single grinding process is adopted for thinning the back surface of the semiconductor, but the processing process of the method is rough, and the semiconductor generates large internal stress after processing, so that the internal circuit of the semiconductor is easily damaged.
Disclosure of Invention
The embodiment of the invention aims to provide a semiconductor thinning processing method which can overcome the problem that the semiconductor generates larger internal stress due to the fact that grinding is adopted for thinning the semiconductor in the prior art.
In order to solve the above technical problem, an embodiment of the present invention provides a method for thinning a semiconductor, including:
soaking the back of the semiconductor in a silicon etching solution of an etching tank for a first preset time; the silicon etching solution comprises nitric acid, organic acid and hydrofluoric acid, and the mass ratio of the nitric acid to the organic acid to the hydrofluoric acid in the silicon etching solution is 5: 3: 1;
washing the semiconductor by using deionized water, and putting the washed semiconductor into an IPA solvent for washing, wherein the washing time is second preset time;
rinsing the semiconductor again with deionized water;
soaking the back of the semiconductor in an alkaline solution for a third preset time; the alkaline solution comprises glacial acetic acid, hydrofluoric acid and deionized water, and the mass ratio of the glacial acetic acid to the hydrofluoric acid to the deionized water in the alkaline solution is 1: 1: 5;
rinsing the semiconductor again by using deionized water, and drying the semiconductor after rinsing;
and drying the semiconductor for a fourth preset time.
Preferably, before immersing the back side of the semiconductor in the silicon etching solution for etching the trench, the method further includes:
a protective film is attached to the front surface of the semiconductor.
Preferably, the organic acid is glacial acetic acid or oxalic acid.
Preferably, the temperature of the silicon etching solution is 25 ℃.
Preferably, the first preset time is 30-60 seconds.
Preferably, the semiconductor is washed by deionized water, and the washed semiconductor is washed by an IPA solvent, specifically:
and washing the semiconductor by using deionized water, and putting the washed semiconductor into an IPA solvent for ultrasonic oscillation cleaning.
Preferably, the temperature of the IPA solvent is 20-25 ℃, and the second preset time is 10-20 minutes.
Preferably, the temperature of the alkaline solution is 50 ℃, and the third preset time is 10 minutes.
As a preferred scheme, the semiconductor is rinsed again with deionized water, and is dried after rinsing, specifically:
and rinsing the semiconductor again by using deionized water with the flow rate of 150 liters/minute and the rinsing pressure of 100PSI, and drying the semiconductor after rinsing.
Preferably, the temperature for drying the semiconductor is 120 ℃, and the fourth preset time is 30 hours.
The embodiment of the invention has the following beneficial effects:
the thinning treatment method of the semiconductor provided by the embodiment of the invention comprises the steps of soaking the back of the semiconductor in a silicon etching solution for etching, then washing the etched semiconductor with deionized water, then placing the washed semiconductor into an IPA solvent for further cleaning, washing the semiconductor with the deionized water again after cleaning, then placing the semiconductor into an alkaline solution to neutralize the residual silicon etching solution on the semiconductor, finally washing the semiconductor with the deionized water, and spin-drying and drying the semiconductor after washing.
Drawings
Fig. 1 is a flowchart of an embodiment of a method for thinning a semiconductor according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Please refer to fig. 1, which is a flowchart illustrating a method for thinning a semiconductor according to an embodiment of the present invention.
The thinning processing method of the semiconductor of the preferred embodiment of the invention comprises the following steps:
step S101, soaking the back of the semiconductor in a silicon etching solution of an etching tank for a first preset time; the silicon etching solution comprises nitric acid, organic acid and hydrofluoric acid, and the mass ratio of the nitric acid to the organic acid to the hydrofluoric acid in the silicon etching solution is 5: 3: 1;
step S102, washing the semiconductor by using deionized water, and putting the washed semiconductor into an IPA solvent for washing, wherein the washing time is second preset time;
step S103, rinsing the semiconductor again by using deionized water;
step S104, soaking the back of the semiconductor in an alkaline solution for a third preset time; the alkaline solution comprises glacial acetic acid, hydrofluoric acid and deionized water, and the mass ratio of the glacial acetic acid to the hydrofluoric acid to the deionized water in the alkaline solution is 1: 1: 5;
step S105, rinsing the semiconductor again by using deionized water, and drying the semiconductor after rinsing;
and S106, drying the semiconductor for a fourth preset time.
In the embodiment of the invention, the back of the semiconductor is soaked in a silicon etching solution for etching, then the etched semiconductor is washed by deionized water, then the semiconductor is further washed by IPA solvent after being washed, then the semiconductor is washed by the deionized water again after being washed, then the semiconductor is placed in an alkaline solution to neutralize the residual silicon etching solution on the semiconductor, finally the semiconductor is washed by the deionized water and is dried and dried after being washed.
Since the front surface of the semiconductor chip has the integrated circuit, in order to protect the integrated circuit on the semiconductor chip, this embodiment further includes, before immersing the back portion of the semiconductor in the silicon etching solution in the etching bath: a protective film is attached to the front surface of the semiconductor. The circuit on the front surface of the semiconductor is protected by attaching a protective film to the front surface of the semiconductor.
In an optional embodiment, the temperature of the silicon etching solution in the step S101 is 25 ℃, and the first preset time is 30 to 60 seconds. In addition, the semiconductor chip contains a large amount of silicon, and hydrofluoric acid has a corrosion effect on silicon, so that the semiconductor chip can be corroded by the hydrofluoric acid, and the hydrofluoric acid with the concentration of 60% can be adopted when the silicon corrosion solution is prepared; the organic acid is glacial acetic acid or oxalic acid, has the effects of neutralization, blending, slow release and the like, and can be replaced by other organic acids; nitric acid is relatively strong, has oxidizing property and corrosiveness, and mainly forms bubbles on the surface of a semiconductor, so that the shedding of substances on the surface of the semiconductor can be accelerated. In the silicon etching solution, the specific gravity of hydrofluoric acid is 1, and the main reason is that the etching is not expected to be too fast; if the nitric acid is 1-4 parts, the forming speed is slow, the production speed is influenced, and if the nitric acid is more than 6 parts, the speed is too fast to control, so the specific gravity of the nitric acid is the best 5; the organic acid is preferably glacial acetic acid, and the glacial acetic acid is neutralized when being 3-4 parts.
In an alternative embodiment, the step S102 is to rinse the semiconductor with deionized water, and to clean the rinsed semiconductor in IPA solvent, specifically:
and washing the semiconductor by using deionized water, and putting the washed semiconductor into an IPA solvent for ultrasonic oscillation cleaning.
Preferably, the temperature of the IPA solvent is 20-25 ℃, and the second preset time is 10-20 minutes.
In an alternative embodiment, the temperature of the alkaline solution in step S104 is 50 ℃, and the third preset time is 10 minutes.
In an optional embodiment, in step S105, "rinse the semiconductor again with deionized water, and spin-dry the semiconductor after rinsing", specifically:
and rinsing the semiconductor again by using deionized water with the flow rate of 150 liters/minute and the rinsing pressure of 100PSI, and drying the semiconductor after rinsing. The semiconductor is rinsed again with deionized water to rinse away residues on the semiconductor.
In an alternative embodiment, the temperature for drying the semiconductor in step S106 is 120 ℃, and the fourth preset time is 30 hours.
For the measurement of the internal stress of the semiconductor chip, the deformation caused by the stress can be measured by using a height measuring instrument, the deformation range corresponding to the stress of the semiconductor chip before being processed is usually 16-20um, and the deformation corresponding to the stress of the semiconductor chip after being ground is 5-9 um.
In summary, according to the thinning processing method of the semiconductor provided by the embodiment of the invention, the back of the semiconductor is firstly soaked in the silicon etching solution for etching, then the etched semiconductor is washed by deionized water, then the semiconductor is further washed by IPA solvent after being washed, and then the semiconductor is washed by the deionized water again after being washed, then the semiconductor is placed in an alkaline solution to neutralize the residual silicon etching solution on the semiconductor, and finally the semiconductor is washed by the deionized water and is dried and dried after being washed.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.
Claims (10)
1. A method for thinning a semiconductor, comprising:
soaking the back of the semiconductor in a silicon etching solution of an etching tank for a first preset time; the silicon etching solution comprises nitric acid, organic acid and hydrofluoric acid, and the mass ratio of the nitric acid to the organic acid to the hydrofluoric acid in the silicon etching solution is 5: 3: 1;
washing the semiconductor by using deionized water, and putting the washed semiconductor into an IPA solvent for washing, wherein the washing time is second preset time;
rinsing the semiconductor again with deionized water;
soaking the back of the semiconductor in an alkaline solution for a third preset time; the alkaline solution comprises glacial acetic acid, hydrofluoric acid and deionized water, and the mass ratio of the glacial acetic acid to the hydrofluoric acid to the deionized water in the alkaline solution is 1: 1: 5;
rinsing the semiconductor again by using deionized water, and drying the semiconductor after rinsing;
and drying the semiconductor for a fourth preset time.
2. The method for thinning a semiconductor according to claim 1, wherein before immersing the back side of the semiconductor in the silicon etching solution for etching the trench, the method further comprises:
a protective film is attached to the front surface of the semiconductor.
3. A method of thinning a semiconductor according to claim 1, wherein the organic acid is glacial acetic acid or oxalic acid.
4. The method of claim 1, wherein the temperature of the silicon etchant is 25 ℃.
5. The method for thinning a semiconductor according to claim 4, wherein the first predetermined time is 30 to 60 seconds.
6. A method for thinning a semiconductor according to any one of claims 1 to 5, wherein the semiconductor is rinsed with deionized water, and the rinsed semiconductor is rinsed in IPA solvent, specifically:
and washing the semiconductor by using deionized water, and putting the washed semiconductor into an IPA solvent for ultrasonic oscillation cleaning.
7. A method for thinning a semiconductor according to claim 6, wherein the temperature of the IPA solvent is 20 to 25 ℃, and the second predetermined time is 10 to 20 minutes.
8. A thinning processing method for a semiconductor according to any one of claims 1 to 4, wherein the temperature of the alkaline solution is 50 ℃, and the third predetermined time is 10 minutes.
9. The method for thinning the semiconductor according to any one of claims 1 to 4, wherein the semiconductor is rinsed again with deionized water and then dried, and specifically:
and rinsing the semiconductor again by using deionized water with the flow rate of 150 liters/minute and the rinsing pressure of 100PSI, and drying the semiconductor after rinsing.
10. A thinning processing method for a semiconductor according to any one of claims 1 to 4, wherein the temperature for drying the semiconductor is 120 ℃, and the fourth preset time is 30 hours.
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| CN202010037685.2A CN113130315A (en) | 2020-01-14 | 2020-01-14 | Thinning processing method of semiconductor |
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| CN202010037685.2A CN113130315A (en) | 2020-01-14 | 2020-01-14 | Thinning processing method of semiconductor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113913823A (en) * | 2021-09-14 | 2022-01-11 | 赛创电气（铜陵）有限公司 | Film-removing etching method for semiconductor refrigerator |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113913823A (en) * | 2021-09-14 | 2022-01-11 | 赛创电气（铜陵）有限公司 | Film-removing etching method for semiconductor refrigerator |
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Application publication date: 20210716 |