CN113119328A - Large-size silicon wafer cutting method - Google Patents
Large-size silicon wafer cutting method Download PDFInfo
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- CN113119328A CN113119328A CN201911116711.4A CN201911116711A CN113119328A CN 113119328 A CN113119328 A CN 113119328A CN 201911116711 A CN201911116711 A CN 201911116711A CN 113119328 A CN113119328 A CN 113119328A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
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Abstract
The invention provides a large-size silicon wafer cutting method, which comprises the following steps: firstly, bonding a silicon rod on a fixed base; bonding at least one group of guide strips on the surface of the silicon rod; cutting the silicon rod with the guide strip into silicon wafers by using a diamond wire saw; the guide strip is arranged on the bottom surface of one side, away from the fixed base, of the silicon rod, and is aligned with the fixed base and perpendicular to the diamond wire saw; the guide strip is positioned on the bottom surface or the side surface of the silicon rod close to one side of the diamond wire saw. According to the cutting method, the magnetic guide strips are bonded on the bottom surface or the side surface of the silicon rod during stick sticking, after the guide strips are cut and separated, the magnetic poles of each independent monomer guide strip are changed after cutting to form individuals mutually exclusive in pairs, and the adjacent silicon wafers are naturally opened under the action of the mutual exclusion force, so that cooling liquid can enter the silicon wafers, silicon powder can be removed, and warping and scratches of the silicon wafers are reduced; the sawing speed of the silicon wafer is improved.
Description
Technical Field
The invention belongs to the technical field of solar silicon wafer cutting devices, and particularly relates to a large-size silicon wafer cutting method.
Background
The single-tile production cost of the battery and the assembly end can be effectively reduced by increasing the size of the silicon wafer, the cost of construction land, a bracket, a combiner box, a cable and the like is reduced, and the cost of logistics transportation and field construction is reduced, so that the cost of a single-tile system is spread. Meanwhile, the fine-line cutting is adopted, so that the knife edge loss can be reduced, the waste of silicon materials is reduced, and the method is an effective way for reducing the cost. Therefore, the increase of the size of the silicon wafer and the adoption of the fine-line cutting are effective ways for reducing the electricity consumption cost, and become development trends of the photovoltaic industry.
However, as the size of the silicon wafer increases and the wire diameter decreases, the cooling liquid is difficult to enter due to the increase of the sawing path and the narrowing of the saw kerf, and the saw dust (silicon powder) cut by the cooling liquid is difficult to remove, so that the heat generated in the cutting process cannot be effectively discharged, and the silicon wafer is locally overheated to generate warpage.
In the process of sawing the silicon wafer, the silicon wafer is formed after cutting, the silicon wafer and the silicon wafer are bonded together under the action of surface tension, particularly in the case of sawing a large-size silicon wafer by adopting an ultra-fine electroplated diamond wire saw, the sawing path is increased, the saw kerf is narrowed, the silicon wafer and the silicon wafer are more easily bonded together, so that cooling liquid is difficult to enter the saw kerf, the cooling liquid mainly plays roles of lubrication, cooling, chip removal and cleaning in the sawing process, so that heat generated in the cutting process cannot be effectively discharged, the silicon wafer is locally overheated to generate warpage, and the silicon wafer cannot be effectively lubricated to cause the problems of scratches, wire breakage and the like. Therefore, how to solve the problem that cooling liquid is difficult to enter saw cuts under the condition of cutting large-size silicon wafers in a thinning mode is a key technical problem to be solved.
Disclosure of Invention
The invention aims to provide a large-size silicon wafer cutting method, which is particularly suitable for cutting large-size silicon wafers and solves the technical problem that cooling liquid is difficult to enter saw cuts in the prior art.
In order to solve the technical problems, the invention adopts the technical scheme that:
a large-size silicon wafer cutting method comprises the following steps:
adhering at least one group of guide strips on the surface of the silicon rod;
bonding the silicon rod with the guide strip on a fixed base, wherein the surface of the guide strip is not bonded with the fixed base;
cutting the silicon rod with the guide strip into silicon wafers by using a diamond wire saw;
the guide strip is positioned between the fixed base and the diamond wire saw and is perpendicular to the diamond wire saw; the guide strip is arranged in the length direction of the silicon rod and is arranged in parallel with the axis of the length direction of the silicon rod; the guide strip is positioned on the bottom surface or the side surface of the silicon rod close to one side of the diamond wire saw.
Further, the guide strip is arranged on the bottom surface of one side, close to the diamond wire saw, of the silicon rod.
Furthermore, the number of the guide strips is two, and the guide strips are arranged on two sides of the center line of the silicon rod in the width direction and are symmetrically arranged.
Further, the sum of the widths of the two sets of guide bars is not less than 1/10 and not more than 1/5 of the width of the silicon rod, and the widths of the two sets of guide bars are the same.
Further, the distance between the guide strip and the outer side edge of the silicon rod is 10-15 mm.
Furthermore, the number of the guide strips is one group, and the guide strips are arranged in the middle position of the silicon rod in the width direction; the guide strip width is not less than 1/10 and not greater than 1/5 of the silicon rod width.
Furthermore, the guide bars are positioned on two side surfaces of one side, close to the diamond wire saw, of the silicon rod and are symmetrically arranged, and the guide bars are at least provided with one group on the side surface of each silicon rod.
Furthermore, the cross section of the guide bar is a rectangular structure, and the side length of one side of the guide bar, which is close to the silicon rod, is greater than the side length of one side of the guide bar, which is vertical to the silicon rod; the length of the guide strip is the same as the length of the silicon rod; the guide strip is positioned on the bottom surface or the side surface of the silicon rod close to one side of the diamond wire saw.
Further, the height of the guide strip is 2-5mm, and the guide strip is a magnetic strip.
Further, the glue solution used for adhering the silicon rod to the fixing base is the same as the glue solution used for adhering the guide strip to the silicon rod.
By adopting the cutting method designed by the invention, the magnetic guide strip is adhered to the surface of the bottom surface or the side surface of the silicon rod during rod adhesion, preferably, the magnetic guide strip is positioned on the surface of the cutter at the bottom surface of the silicon rod, in the cutting process, after the magnetic guide strip is cut and separated, the magnetic poles of each independent single guide strip are changed after cutting to form two mutually exclusive individuals, and the silicon wafers are naturally opened between the adjacent silicon wafers under the action of the mutually exclusive force, so that cooling liquid can enter the silicon wafers, and the silicon powder can be discharged. The invention not only solves the technical problem that the cooling liquid is difficult to enter the saw cut, but also can reduce the warping and scratches of the silicon wafer; the sawing speed of the silicon wafer is improved; and the wire thinning cutting of the diamond wire saw is also facilitated.
Drawings
Fig. 1 is a schematic structural diagram of a large-size silicon wafer cutting method according to a first embodiment of the present invention;
FIG. 2 is a side view of a cutting method according to a first embodiment of the present invention;
fig. 3 is a schematic view of a guide bar of a first embodiment of the present invention at a position of a silicon rod;
FIG. 4 is a schematic structural diagram of a diced silicon wafer according to a first embodiment of the present invention;
FIG. 5 is a side view of a cutting method according to a second embodiment of the present invention;
FIG. 6 is a schematic view of a guide bar of a second embodiment of the present invention at the position of a silicon rod;
fig. 7 is a side view of a cutting method according to a third embodiment of the present invention.
In the figure:
10. silicon rod 20, guide bar 30, diamond wire saw
40. Fixing base 41, rubber plate 42, and die
43. Material seat 50 and silicon wafer
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
The first embodiment is as follows:
the present embodiment provides a large-sized silicon wafer cutting apparatus, as shown in fig. 1, comprising a fixed base 40 for placing a silicon rod 10 and a plurality of diamond wire saws 30 arranged in parallel and used for cutting the silicon rod 10, wherein at least one set of guide bars 20 is arranged on the surface of the silicon rod 10, and the guide bars 20 are magnetic stripes and are arranged between the fixed base 40 and the diamond wire saws 30 and perpendicular to the diamond wire saws 30. The guide bar 20 is adhered to the surface of the silicon rod 10 by a glue solution when the silicon rod 10 is adhered, and the glue solution may be selected from AB glue solution adhered to the fixing base 40 with the silicon rod 10, which is conventional knowledge in the art and is omitted here. The guide strip 20 is disposed in the longitudinal direction of the silicon rod 10 and is disposed parallel to the longitudinal axis of the silicon rod 10.
In the present embodiment, as shown in fig. 2 and 3, two sets of guide bars 20 are provided on the bottom surface of the silicon rod 10 on the side close to the diamond wire saw 30, the length of the guide bars 20 is the same as that of the silicon rod 10, and the guide bars 20 are symmetrically disposed on both sides of the center line in the width direction of the silicon rod 10. The magnetic guide strip 10 is arranged on the bottom surface of the silicon rod 10, so that the magnetic guide strip 20 with the silicon rod 10 is integrally fixed on the fixed base 40, the fixed base 40 comprises a rubber plate 41, a crystal peeling plate 42 and a material seat 43, the material seat 43 is fixed on a cutting chamber, the silicon rod 10 is arranged right above the diamond wire saw 30, the magnetic guide strip 20 is very thin and soft, the diamond wire saw 30 is a cutting steel wire formed by embedding a plurality of tiny and uniform diamond particles around the stainless steel wire, and the magnetic guide strip 20 does not influence the characteristics of the diamond wire saw 30 and does not react with the diamond wire saw 30. In the initial stage of cutting, the diamond wire saw 30 slips with the hard silicon rod 10 during feeding, and is not easy to cut. When the magnetic guide strip 20 is provided, the guide strip 20 can serve as a buffer during knife insertion, the diamond wire saw 30 can be fixed along with the cutting of the guide strip 20, and the cutting of the silicon rod 10 can be easily performed.
As shown in fig. 4, after the magnetic guiding strips 20 are cut and separated, a plurality of single guiding strips 20 integrally connected with a plurality of silicon wafers 50 are formed, and it can be known from the characteristics of the magnetic strips that the magnetic poles of the single guiding strips 20 change to become individuals mutually exclusive in pairs, and the silicon wafers 50 naturally open between adjacent silicon wafers 50 under the action of the mutual exclusion force, so as to facilitate the entry of cooling liquid and remove silicon powder between adjacent silicon wafers 50 in the cutting process. Because the mutual repulsion force between the silicon wafers 50 is the same, the horizontal stress of each silicon wafer 50 is zero, and the uniform gap between the adjacent silicon wafers 50 can be further ensured. Meanwhile, as the silicon wafers 50 are large in size, cooling liquid easily enters gaps between adjacent silicon wafers 50 along with the cutting, so that heat generated in the cutting process can be effectively discharged in time, and the warping of the silicon wafers 50 caused by local overheating can be reduced; meanwhile, the silicon wafer can be effectively lubricated, so that the problems of scratches, broken lines and the like of the silicon wafer 50 are prevented; but also reduces debris due to vibration of the diamond wire saw 30. Silicon powder in the gap between the adjacent silicon wafers 50 is effectively removed, the cutting resistance of the diamond wire saw 30 is reduced, the sawing speed of the diamond wire saw 30 can be further improved, and the structure is also suitable for cutting of the thinner diamond wire saw 30, so that the fine line production of the diamond wire saw 30 is improved, and the production efficiency is improved.
Further, as shown in fig. 3, the sum of the widths W2 of the two symmetrically disposed sets of guide bars 20 is not less than 1/10 of the width of the silicon rod 10, and the widths of the two sets of guide bars 20 are the same. The width of the guide strip 20 may be at most fully covered over the width of the bottom surface of the silicon rod 10, but this configuration may result in excessive production costs. Therefore, it is preferable that the sum of the widths W2 of the two sets of guide bars 20 is not less than 1/10 of the width W1 of the silicon rod 10 and not more than 1/5 of the width W1 of the silicon rod 10. The distance W3 between the guide strip 20 and the outer side of the silicon rod 10 is 10-15mm, so that the cutting of the diamond wire saw 30 and the silicon rod 10 is facilitated, and the variation amplitude of the diamond wire saw 30 is reduced. The symmetrically arranged guide strips 20 not only ensure uniform tension of the diamond wire saw 30, but also reduce vibration of the diamond wire saw 30 during cutting.
The cross section of the guide bar 20 is a rectangular structure, and the side length of the guide bar 20 close to the silicon rod 10 is larger than the side length of the guide bar perpendicular to the silicon rod 10, that is, the horizontal width of the guide bar 20 is larger than the vertical height. The vertical height of the guide bar 20, that is, the thickness of the guide bar 20, is 2-5mm, and the height of the guide bar 20 is not too high and cannot be larger than the horizontal width of the guide bar 20, because when the magnetic guide bar 20 is cut into a plurality of independent rectangular single bodies connected with a silicon wafer, as shown in fig. 4, the width of the bonding surface of the cut guide bar 20 is the thickness of the silicon wafer, and is limited by the bonding force, so that the height of a single guide bar 20 is not too high, otherwise, the single guide bar 20 falls off due to insufficient bonding force, and the adjacent silicon wafers 50 cannot be opened.
In this embodiment, the magnetic guide strips 20 symmetrically arranged are bonded to the surface of the silicon rod 10, the magnetic guide strips 20 are cut and separated into a plurality of monomers integrally connected with the silicon wafer 50, so that the magnetic poles of each monomer guide strip 20 change to become two mutually exclusive individuals, and the silicon wafers 50 are naturally opened between adjacent silicon wafers 50 under the action of the mutual exclusion force, thereby facilitating the entry of cooling liquid and removing silicon powder. Not only solves the technical problem that the cooling liquid is difficult to enter the saw notch, but also can reduce the warping and the scratch of the silicon wafer 50, improve the sawing speed of the silicon wafer 50 and be beneficial to the fine-line cutting of the diamond wire saw 30.
A method for cutting a large-size silicon wafer comprises the following steps:
the first step is as follows: two sets of guide bars 20 are bonded to the surface of the silicon rod 10.
Specifically, two sets of guide strips 20 are bonded to one surface of the silicon rod 10 in the longitudinal direction by using an AB tape, the length of the guide strips 20 is the same as that of the silicon rod 10, the guide strips 20 are disposed on both sides of the center line of the surface in the width direction and are symmetrically disposed, and the guide strips 20 are disposed in parallel with the longitudinal axis of the silicon rod 10. The cross section of the guide bar 20 is a rectangular structure, and the side length of the guide bar 20 close to the silicon rod 10 is larger than the side length of the guide bar perpendicular to the silicon rod 10, that is, the horizontal width of the guide bar 20 is larger than the vertical height. The vertical height of the guide bar 20, that is, the thickness of the guide bar 20 is 2-5mm, and the height of the guide bar 20 is not too high and cannot be larger than the horizontal width of the guide bar 20. This is because when the magnetic guide bar 20 is cut into a plurality of independent rectangular units connected to the silicon wafers 50, the width of the bonding surface of the cut guide bar 20 is the thickness of the silicon wafers 50, and is limited by the bonding force, so that the height of the single guide bar 20 is not too high, otherwise the single guide bar 20 falls off due to insufficient bonding force, and the adjacent silicon wafers 50 cannot be opened.
Further, the sum of the widths W2 of the two symmetrically arranged sets of guide bars 20 is not less than 1/10 of the width of the silicon rod 10, and the widths of the two sets of guide bars 20 are the same. The width of the guide strip 20 may be at most fully covered over the width of the bottom surface of the silicon rod 10, but this configuration may result in excessive production costs. Therefore, it is preferable that the sum of the widths W2 of the two sets of guide bars 20 is not less than 1/10 of the width W1 of the silicon rod 10 and not more than 1/5 of the width W1 of the silicon rod 10. The distance W3 between the guide strip 20 and the outer side of the silicon rod 10 is 10-15mm, so that the cutting of the diamond wire saw 30 and the silicon rod 10 is facilitated, and the variation amplitude of the diamond wire saw 30 is reduced. The symmetrically arranged guide strips 20 not only ensure uniform tension of the diamond wire saw 30, but also reduce vibration of the diamond wire saw 30 during cutting.
The magnetic guide strip 20 is very thin and soft, and the diamond wire saw 30 is a cut steel wire formed by embedding a plurality of fine and uniform diamond particles around a stainless steel wire, and the magnetic guide strip 20 does not affect the characteristics of the diamond wire saw 30 and does not react with the diamond wire saw 30.
The second step is that: the silicon rod 10 with the guide strip 20 is bonded to the fixed base 40, and the surface on which the guide strip 20 is located is a surface on which the silicon rod 10 is not bonded to the fixed base 40.
Specifically, the fixed base 40 includes a rubber plate 41, a seed crystal 42, and a material seat 43, and the material seat 43, the seed crystal 42, and the rubber plate 41 are sequentially arranged from top to bottom. Firstly fixing the crystal peeling 42 and the material seat 43 through screws, then adhering the resin plate 41 to the crystal peeling 42 through AB glue, curing for 10-20min, adhering the silicon rod 10 with the guide bar 20 to the resin plate 41 after curing is completed, wherein the adhesion surface of the silicon rod 10 and the resin plate 41 is the opposite surface of the surface where the guide bar 20 is located, namely the guide bar 20 is arranged on the bottom surface of the silicon rod 10 far away from the resin plate 41, and the adhesion and curing time of the silicon rod 10 is 2-3 h. The resin plate 41 in which the silicon rod 10 is bonded to the fixing base 40 uses the same adhesive as the adhesive used for the guide bar 20 to be bonded to the surface of the silicon rod 10, and is AB adhesive.
The third step: the silicon rod 10 with the guide strip 20 is cut into silicon wafers 50 with a diamond wire saw 30.
Specifically, the adhered silicon rod 10 and the fixed base 40 are mounted on the cutting chamber through a feeding trolley, the silicon rod 10 is placed right above the diamond wire saw 30, cutting parameters are set, and cutting is performed to form the silicon wafer 50.
In the initial stage of cutting, the diamond wire saw 30 slips with the hard silicon rod 10 during feeding, and is not easy to cut. When the magnetic guide strip 20 is provided, the guide strip 20 can serve as a buffer during knife insertion, the diamond wire saw 30 can be fixed along with the cutting of the guide strip 20, and the cutting of the silicon rod 10 can be easily performed.
When the magnetic guide strips 20 are cut and separated, as the cutting depth increases, a plurality of single guide strips 20 integrally connected with the silicon wafer 50 are formed at the lower end of the silicon rod 10. According to the characteristics of the magnetic stripe, the magnetic poles of the single guide strips 20 can be changed to form two mutually exclusive individuals, and the silicon wafers 50 are naturally opened between the adjacent silicon wafers 50 under the action of the mutual exclusion force, so that the cooling liquid can enter the silicon wafers 50, and the silicon powder between the adjacent silicon wafers 50 is removed in the cutting process. Because the mutual repulsion force between the silicon wafers 50 is the same, the horizontal stress of each silicon wafer 50 is zero, and the uniform gap between the adjacent silicon wafers 50 can be further ensured. Meanwhile, as the silicon wafers 50 are large in size, cooling liquid easily enters gaps between adjacent silicon wafers 50 along with the cutting, so that heat generated in the cutting process can be effectively discharged in time, and the warping of the silicon wafers 50 caused by local overheating can be reduced; meanwhile, the silicon wafer 50 can be effectively lubricated to prevent the problems of scratches, broken lines and the like; but also reduces debris due to vibration of the diamond wire saw 30. The silicon powder in the gap between the adjacent silicon wafers 50 is effectively removed, the cutting resistance of the diamond wire saw 30 is reduced, the sawing speed of the diamond wire saw 30 can be further improved, and the method is also suitable for cutting of the thinner diamond wire saw 30, so that the fine-line production of the diamond wire saw 30 is improved, and the production efficiency is improved.
Example two:
as shown in fig. 5 and 6, the greatest difference of the present embodiment is that the number of the guide bars 20 is one group, and the guide bars 20 are fixedly disposed at the middle position in the width direction of the bottom surface of the silicon rod 10, compared to the first embodiment. The length of the guide strip 20 is the same as the length of the silicon rod 10 and is arranged parallel to the length axis of the silicon rod 10, i.e. perpendicular to the diamond wire saw 30. The width W4 of the guide strip 20 is not less than 1/10 of the width W1 of the silicon rod 10 and not more than 1/5 of the width W1 of the silicon rod 10, the height of the guide strip 20, i.e. the thickness of the guide strip 20, still not being 2-5 mm. In the present embodiment, the guide bar 20 not only reduces vibration during the cutting of the diamond wire saw 30 but also serves as a buffer during the cutting, and the diamond wire saw 30 can be fixed as the guide bar 20 finishes cutting, thereby facilitating the cutting of the silicon rod 10. The arrangement of the group of magnetic guide strips 20 also forms a plurality of monomer guide strips 20 integrally connected with the silicon wafer 50 along with the cutting and separation of the silicon rod 10, the magnetic poles of the monomer guide strips 20 can change to become individuals mutually exclusive in pairs, and the silicon wafer 50 naturally opens between the adjacent silicon wafers 50 under the action of the mutual exclusion force, so that the cooling liquid can enter the silicon wafer, silicon powder between the adjacent silicon wafers 50 in the cutting process is removed, the warping of the silicon wafer 50 is reduced, the problems of scratches and broken lines of the silicon wafer 50 are also reduced, the qualification rate of the silicon wafer 50 is improved, and the cutting efficiency is improved.
A method for cutting a large-size silicon wafer comprises the following steps:
the first step is as follows: a set of guide bars 20 is bonded to the surface of the silicon rod 10.
Specifically, the greatest difference in this embodiment compared to the first embodiment is that a set of guide bars 20 is bonded with an AB glue on one surface of the silicon rod 10 in the length direction, the length of the guide bars 20 is the same as the length of the silicon rod 10, the guide bars 20 are placed at the widthwise intermediate positions of the surface, and the guide bars 20 are disposed in parallel with the lengthwise axis of the silicon rod 10. The width W4 of the guide strip 20 is not less than 1/10 of the width W1 of the silicon rod 10 and not more than 1/5 of the width W1 of the silicon rod 10, the height of the guide strip 20, i.e. the thickness of the guide strip 20, still not being 2-5 mm. The structure of the guide strip 20 is the same as the first embodiment, and will not be described in detail.
The second step is that: the silicon rod 10 with the guide strip 20 is bonded to the fixed base 40, and the surface on which the guide strip 20 is located is a surface on which the silicon rod 10 is not bonded to the fixed base 40.
The specific contents of the silicon rod 10 adhering to the fixing base 40 in this step are the same as those in the first embodiment, and are omitted here.
The third step: the silicon rod 10 with the guide strip 20 is cut into silicon wafers 50 with a diamond wire saw 30.
The details of this step are the same as those in the first embodiment, and are omitted here.
The arrangement of the group of magnetic guide strips 20 in the embodiment also forms a plurality of monomer guide strips 20 integrally connected with the silicon wafer 50 along with the cutting and separation of the silicon rod 10, the magnetic poles of the monomer guide strips 20 can change to become individuals mutually exclusive in pairs, the silicon wafer 50 naturally opens between the adjacent silicon wafers 50 under the action of the mutual exclusion force, thereby being beneficial to the entering of cooling liquid, silicon powder between the adjacent silicon wafers 50 in the cutting process is removed, further reducing the warping of the silicon wafer 50, reducing the problems of scratches and broken lines of the silicon wafer 50, improving the qualification rate of the silicon wafer 50 and improving the cutting efficiency.
Example three:
as shown in fig. 7, the greatest difference of this embodiment compared to the first embodiment is that the guide bars 20 are fixedly disposed on both side surfaces of the silicon rod 10, the guide bars 20 are disposed in one set on each side surface, the guide bars 20 are symmetrically disposed, and the guide bars 20 are disposed near the bottom surface of the silicon rod 10. The length of the guide strip 20 is the same as the length of the silicon rod 10 and is arranged parallel to the length axis of the silicon rod 10. The width W4 of the guide strip 20 is not less than 1/10 of the width W1 of the silicon rod 10 and not more than 1/5 of the width W1 of the silicon rod 10, the height of the guide strip 20, i.e. the thickness of the guide strip 20, still not being 2-5 mm. With the silicon rod 10 being cut, the symmetrically arranged guide strips 20 are separated to form a plurality of monomer guide strips 20 arranged on the side and integrally connected with the silicon wafers 50, the magnetic poles of the monomer guide strips 20 can change to become individuals mutually exclusive in pairs, and the adjacent silicon wafers 50 are naturally opened under the action of the mutual exclusion force, so that the cooling liquid can enter the silicon wafers, silicon powder between the adjacent silicon wafers 50 in the cutting process can be removed, and the cutting quality and the cutting efficiency of the silicon wafers 50 can be improved.
A method for cutting a large-size silicon wafer comprises the following steps:
the first step is as follows: a set of guide bars 20 is bonded to the surface of the silicon rod 10.
Specifically, the greatest difference in this embodiment compared to the first embodiment is that the guide bars 20 are bonded with AB glue on two symmetrical side surfaces in the length direction of the silicon rod 10, the guide bars 20 are provided in a set on each side surface, the guide bars 20 are symmetrically provided, and the guide bars 20 are provided near the bottom surface of the silicon rod 10. The structure of the guide strip 20 is the same as the first embodiment, and will not be described in detail.
The second step is that: the silicon rod 10 with the guide strip 20 is bonded to the fixed base 40, and the surface on which the guide strip 20 is located is a surface on which the silicon rod 10 is not bonded to the fixed base 40.
The specific contents of the silicon rod 10 adhering to the fixing base 40 in this step are the same as those in the first embodiment, and are omitted here.
The third step: the silicon rod 10 with the guide strip 20 is cut into silicon wafers 50 with a diamond wire saw 30.
The method of installing the silicon rod 10 in this step is the same as in the first embodiment, and is omitted here.
In the present embodiment, after the diamond wire saw 30 is inserted into the blade for cutting, the diamond wire saw 30 cuts the silicon rod 10 while cutting the magnetic guide strips 20 disposed on the side surfaces of the silicon rod 10, and as the cutting depth increases, a plurality of monomer guide strips 20 which are symmetrically disposed on the side surfaces and integrally connected with the silicon wafer 50 are formed at the lower section of the silicon rod 10. According to the characteristics of the magnetic stripe, the magnetic poles of the single guide strips 20 can be changed to form two mutually exclusive individuals which are distributed on two vertical side edges of the silicon wafers 50, and the silicon wafers 50 are naturally opened between the adjacent silicon wafers 50 under the action of the mutual repulsion force, so that the cooling liquid can enter the silicon wafers 50, and the silicon powder between the adjacent silicon wafers 50 can be removed in the cutting process. Because the silicon wafers 50 have large sizes, the cooling liquid easily enters gaps between adjacent silicon wafers 50 along with the cutting, so that heat generated in the cutting process can be effectively discharged in time, the warping of the silicon wafers 50 caused by local overheating can be reduced, and the problems of scratches, wire breakage and the like of the silicon wafers 50 are also prevented.
By adopting the cutting method designed by the invention, the magnetic guide strip is adhered to the surface of the bottom surface or the side surface of the silicon rod during rod adhesion, preferably, the magnetic guide strip is positioned on the surface of the cutter at the bottom surface of the silicon rod, in the cutting process, after the magnetic guide strip is cut and separated, the magnetic poles of each independent single guide strip are changed after cutting to form two mutually exclusive individuals, and the silicon wafers are naturally opened between the adjacent silicon wafers under the action of the mutually exclusive force, so that cooling liquid can enter the silicon wafers, and the silicon powder can be discharged. The invention not only solves the technical problem that the cooling liquid is difficult to enter the saw cut, but also can reduce the warping and scratches of the silicon wafer; the sawing speed of the silicon wafer is improved; and the wire thinning cutting of the diamond wire saw is also facilitated.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. A large-size silicon wafer cutting method is characterized by comprising the following steps:
adhering at least one group of guide strips on the surface of the silicon rod;
bonding the silicon rod with the guide strip on a fixed base, wherein the surface of the guide strip is not bonded with the fixed base;
cutting the silicon rod with the guide strip into silicon wafers by using a diamond wire saw;
the guide strip is positioned between the fixed base and the diamond wire saw and is perpendicular to the diamond wire saw; the guide strip is arranged in the length direction of the silicon rod and is arranged in parallel with the axis of the length direction of the silicon rod; the guide strip is positioned on the bottom surface or the side surface of the silicon rod close to one side of the diamond wire saw.
2. The method for cutting the large-size silicon wafer according to claim 1, wherein the guide strip is arranged on the bottom surface of the silicon rod on the side close to the diamond wire saw.
3. The method as claimed in claim 2, wherein the number of the guide strips is two, and the guide strips are symmetrically arranged on both sides of the center line of the silicon rod in the width direction.
4. The method as claimed in claim 3, wherein the sum of the widths of the two sets of the guide bars is not less than 1/10 and not more than 1/5, and the widths of the two sets of the guide bars are the same.
5. The method as claimed in claim 3 or 4, wherein the distance of the guide strip near the outer side of the silicon rod is 10-15 mm.
6. The method for cutting the large-size silicon wafer according to claim 1, wherein the number of the guide bars is one, and the guide bars are arranged at the middle position in the width direction of the silicon rod; the guide strip width is not less than 1/10 and not greater than 1/5 of the silicon rod width.
7. The method as claimed in claim 1, wherein the guide bars are symmetrically arranged on both sides of the silicon rod near the diamond wire saw, and at least one group of guide bars is arranged on each side of the silicon rod.
8. The method for cutting the large-size silicon wafer according to any one of claims 1 to 4 and 6 to 7, wherein the cross section of the guide bar is a rectangular structure, and the side length of the guide bar close to one side of the silicon rod is larger than the side length of the guide bar perpendicular to one side of the silicon rod; the guide strip length is the same as the silicon rod length.
9. The method as claimed in claim 8, wherein the height of the guide bars is 2-5mm and the guide bars are magnetic strips.
10. The method for cutting the large-size silicon wafer according to any one of claims 1 to 4, 6 to 7 and 9, wherein the glue used for bonding the silicon rod to the fixing base is the same as the glue used for bonding the guide strip to the silicon rod.
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| Title |
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| 华中师范学院物理系电学教研室: "《电学 上册》", 31 October 1975 * |
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Application publication date: 20210716 |