CN112757509B - Diamond wire cutting method for splicing silicon materials - Google Patents
Diamond wire cutting method for splicing silicon materials Download PDFInfo
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- CN112757509B CN112757509B CN202110175041.4A CN202110175041A CN112757509B CN 112757509 B CN112757509 B CN 112757509B CN 202110175041 A CN202110175041 A CN 202110175041A CN 112757509 B CN112757509 B CN 112757509B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a diamond wire cutting method for splicing silicon materials, which is characterized in that a diamond wire net without wire dividing net wiring is adopted to slice the spliced silicon materials and cut the spliced silicon materials into silicon wafers, so that the problems of high silicon wafer loss, complicated wiring, long operation time, low cutting efficiency, low wafer obtaining rate and the like caused by the original wire dividing net cutting can be solved, and the capacity of a cutting production line can be greatly improved.
Description
Technical Field
The invention relates to the technical field of silicon wafer cutting, in particular to a diamond wire cutting method for splicing silicon materials.
Background
The basis of modern information technology and modern electronics technology is semiconductor technology, while silicon material is one of the most important semiconductor materials. The current silicon wafer cutting technology which is commonly used at home and abroad is as follows: a cutting technology of a diamond wire cutting silicon rod. The technology adopts cutting fluid to replace mortar and adopts diamond wires to replace steel wires, and the technology makes great technological progress in whole rod cutting. But when the skin material concatenation cutting of monocrystalline silicon stick limit, owing to be polylith concatenation cutting, so need divide the net cutting to following problem has been brought: (1) the branching network is cut, the wiring operation is complex, the time consumption is long, and the production efficiency is seriously influenced; (2) the cutting loss of the reticle is more, and the yield and the wafer yield are reduced.
Therefore, the method for slicing the spliced silicon material by adopting the diamond wire mesh without wire mesh wiring has important significance.
Disclosure of Invention
The invention aims to provide a diamond wire cutting method for spliced silicon materials, which is characterized in that a diamond wire mesh without wire mesh wiring is adopted to slice the spliced silicon materials, and silicon wafers are cut from the spliced silicon materials;
the diamond wire net comprises a net surface consisting of diamond wires, and the net surface is a plane; when slicing is carried out, the diamond wires in the net surface penetrate through the spliced silicon material along the direction parallel to a certain plane, and the plane is taken as a cutting direction plane;
the spliced silicon material is formed by splicing a row of silicon materials, or the spliced silicon material is formed by splicing at least two rows of silicon materials, and the rows of silicon materials are arranged side by side; the number of the silicon materials in the same row is at least two; the silicon materials in the same row are sequentially arranged along a certain arrangement direction, and the arrangement direction is vertical to the cutting direction; the splicing surfaces of the two adjacent silicon materials in the same row are parallel to each other by taking the splicing opposite surfaces as splicing surfaces and the splicing surfaces as planes;
the splicing surface and the cutting direction surface are perpendicular to the net surface, and the included angle between the splicing surface and the cutting direction surface is 0.5-1.5 degrees.
Preferably, the splicing surface is polished.
Preferably, the distance between the splicing surfaces of two adjacent silicon materials in the same row is not more than 0.01 mm.
Preferably, the splicing silicon material comprises end faces which are respectively arranged at two ends of the arrangement direction, and the end faces are parallel to the cutting direction face.
Preferably, the spliced silicon material is in a cuboid shape as a whole.
Preferably, before slicing, the spliced silicon material is fixed on the support plate, the support plate is parallel to the net surface, and the spliced silicon material is arranged between the support plate and the net surface.
Preferably, the carrier plate is a resin plate.
Preferably, glue is adopted to bond and fix the spliced silicon material on the carrier plate.
Preferably, the glue is a sticky stick glue.
Preferably, a gap between two adjacent silicon materials in the same row is used as an in-row splicing gap; taking a gap between two adjacent rows of silicon materials as an inter-row splicing gap; after the splicing silicon material is bonded on the carrier plate, one side of the splicing silicon material, which faces the carrier plate, is a bonding surface of the splicing silicon material;
if the spliced silicon material is formed by splicing a row of silicon materials, before the spliced silicon material is bonded on the carrier plate, the region, located on the bonding surface, of the splicing gap in the row is sealed by using an adhesive tape, so that glue is prevented from entering the splicing gap in the row during bonding;
if the splicing silicon material is formed by splicing at least two rows of silicon materials, before the splicing silicon material is bonded on the support plate, the regions of splicing gaps in the rows and splicing gaps between the rows, which are positioned on the bonding surface, are sealed by using the adhesive tape, so that glue is prevented from entering the splicing gaps in the rows and the splicing gaps between the rows during bonding.
Preferably, one side of the spliced silicon material, which is opposite to the bonding surface, is the outer side surface of the spliced silicon material;
if the spliced silicon material is formed by splicing a row of silicon materials, before the spliced silicon material is bonded on the support plate, sealing the area, located on the outer side face, of the splicing gap in the row by using an adhesive tape;
if the splicing silicon material is formed by splicing at least two rows of silicon materials, before the splicing silicon materials are bonded on the support plate, the regions of splicing gaps in the rows and splicing gaps among the rows, which are positioned on the outer side surface, are sealed by using the adhesive tape.
Preferably, the adhesive tape is a silicone pressure-sensitive adhesive tape with a high-temperature resistant material as a base material.
Preferably, the silicon material is cut from silicon rod edge skin materials.
Preferably, the silicon material is monocrystalline silicon or polycrystalline silicon.
The invention has the advantages and beneficial effects that: the diamond wire cutting method for the spliced silicon material is characterized in that a diamond wire net without wire dividing net wiring is adopted for slicing the spliced silicon material, the problems of high silicon wafer loss, complex wiring, long operation time, low cutting efficiency, low wafer obtaining rate and the like caused by the original wire dividing net cutting can be solved, and the capacity of a cutting production line can be greatly improved.
The inventor of the present invention found that, the existing spliced silicon material needs to be cut by using a wire-dividing net, because the splicing surfaces of the silicon materials in the existing spliced silicon material are parallel to the cutting direction surface, that is, the splicing gap between two opposite splicing surfaces (i.e., the splicing gap in the row) is parallel to the cutting direction surface, if a diamond wire net without wire-dividing net wiring is used to slice the spliced silicon material, during cutting, the diamond wires in the net surface penetrate through the spliced silicon material along the direction parallel to the cutting direction surface, that is, the diamond wires penetrate through the spliced silicon material along the direction parallel to the splicing gap in the row, the diamond wires are inevitably trapped in the splicing gap in the row and always penetrate through the splicing gap in the row, which causes the problems of wire jumping, high wire, wire breakage and the like of the diamond wires, and even if the splicing surfaces are polished, the problems can not be avoided.
The invention adjusts the splicing surface and the cutting direction surface to be unparallel, and controls the included angle between the splicing surface and the cutting direction surface to be 0.5-1.5 degrees, the splicing gap between two opposite splicing surfaces (i.e. the splicing gap in the row) can be adjusted to be not parallel to the cutting direction surface which is inclined at a small angle relative to the splicing gap in the row, when the diamond wire mesh without wire mesh wiring is adopted to slice spliced silicon materials, because the diamond wires in the net surface penetrate through the spliced silicon material along the direction parallel to the cutting direction surface, namely, the diamond wire penetrates through the spliced silicon material along the direction slightly deviating from the splicing gaps in the rows, so that the diamond wire only penetrates through the splicing gaps in the rows obliquely when penetrating through the splicing gaps in the rows during cutting, the diamond wire cannot sink into the splicing gaps in the rows, the problems of wire jumping, wire drawing, wire breakage and the like caused by the fact that the diamond wire always runs through the splicing gaps in the row can be solved.
The invention does not need to carry out branching network wiring, can solve the problems of more silicon chip loss, fussy wiring, long operation time, low cutting efficiency, low chip yield and the like caused by the original branching network cutting, and can greatly improve the capacity of a cutting production line.
In addition, the invention adopts the adhesive tape to seal the regions of the splicing gaps in the rows and the splicing gaps between the rows on the bonding surface, thereby preventing the glue from entering the splicing gaps in the rows and the splicing gaps between the rows during bonding, reducing the influence of the glue on the subsequent degumming process to the maximum extent and further improving the productivity of the photovoltaic enterprises.
Moreover, the adhesive tape can also play a role in fixing, can be used for bonding mutually spliced silicon materials, prevents the spliced silicon materials from scattering when being moved, and avoids the silicon materials from falling and being damaged.
Detailed Description
The following examples are provided to further illustrate embodiments of the present invention. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
Example 1
A diamond wire cutting method for spliced silicon materials comprises the steps of slicing spliced silicon materials by adopting a diamond wire net without wire net wiring, and cutting silicon wafers from the spliced silicon materials;
the diamond wire net comprises a net surface consisting of diamond wires, and the net surface is a plane; when slicing, the diamond wires in the net surface penetrate through and splice the silicon material along the direction parallel to a certain plane, and the plane is taken as a cutting direction plane;
the spliced silicon material is formed by splicing a row of silicon materials; the number of the silicon materials in the same row is at least two; the same row of silicon materials are sequentially arranged along a certain arrangement direction, and the arrangement direction is vertical to the cutting direction plane; the whole spliced silicon material is cuboid; the splicing silicon material comprises end surfaces which are respectively arranged at two ends in the arrangement direction, and the end surfaces are parallel to the cutting direction surface;
taking the opposite surfaces of two adjacent silicon materials spliced in the same row as splicing surfaces, polishing the splicing surfaces to obtain planes, wherein the splicing surfaces of the silicon materials in the spliced silicon materials are parallel to each other; the distance between the splicing surfaces of two adjacent silicon materials in the same row is not more than 0.01 mm;
the splicing surface and the cutting direction surface are perpendicular to the net surface, and the included angle between the splicing surface and the cutting direction surface is 0.5-1.5 degrees;
more specifically, the present invention is to provide a novel,
before slicing, adhering and fixing the spliced silicon material on a support plate by adopting glue, wherein the glue is sticky glue, the support plate is a resin plate, the support plate is parallel to the net surface, and the spliced silicon material is arranged between the support plate and the net surface; after the splicing silicon material is bonded on the carrier plate, one side of the splicing silicon material, which faces the carrier plate, is a bonding surface of the splicing silicon material; taking one side of the spliced silicon material opposite to the bonding surface as the outer side surface of the spliced silicon material;
taking a gap between two adjacent silicon materials in the same row as an in-row splicing gap; before the splicing silicon material is bonded on the carrier plate, the region, located on the bonding surface, of the splicing gap in the row is sealed by using an adhesive tape, so that glue is prevented from entering the splicing gap in the row during bonding; and the area of the splicing gap in the row positioned on the outer side surface is sealed by adopting an adhesive tape.
When the embodiment 1 slices, the diamond wires in the net surface penetrate through the spliced silicon materials along the direction parallel to the cutting direction surface, the cutting direction surface inclines at a small angle relative to the splicing gaps in the row, so the diamond wires penetrate through the spliced silicon materials along the direction slightly inclining to the splicing gaps in the row, even if the diamond wires penetrate through the splicing gaps in the row, the diamond wires only penetrate through the splicing gaps in the row in an inclined mode, the diamond wires cannot be trapped in the splicing gaps in the row, the situation that the diamond wires penetrate through the splicing gaps in the row all the time can be avoided, and the problems of wire jumping, high wires, wire breakage and the like are further caused.
Example 2
A diamond wire cutting method for spliced silicon materials comprises the steps of slicing spliced silicon materials by adopting a diamond wire net without wire net wiring, and cutting silicon wafers from the spliced silicon materials;
the diamond wire net comprises a net surface consisting of diamond wires, and the net surface is a plane; when slicing, the diamond wires in the net surface penetrate through and splice the silicon material along the direction parallel to a certain plane, and the plane is taken as a cutting direction plane;
the spliced silicon material is formed by splicing at least two rows of silicon materials, and the silicon materials in each row are arranged side by side; the number of the silicon materials in the same row is at least two; the silicon materials in the same row are sequentially arranged along a certain arrangement direction, and the arrangement direction is vertical to the cutting direction; the whole spliced silicon material is cuboid; the splicing silicon material comprises end surfaces which are respectively arranged at two ends in the arrangement direction, and the end surfaces are parallel to the cutting direction surface;
taking the opposite surfaces of two adjacent silicon materials spliced in the same row as splicing surfaces, polishing the splicing surfaces to obtain planes, wherein the splicing surfaces of the silicon materials in the spliced silicon materials are parallel to each other; the distance between the splicing surfaces of two adjacent silicon materials in the same row is not more than 0.01 mm;
the splicing surface and the cutting direction surface are perpendicular to the net surface, and the included angle between the splicing surface and the cutting direction surface is 0.5-1.5 degrees;
more specifically, the present invention is to provide a novel,
before slicing, adhering and fixing the spliced silicon material on a support plate by adopting glue, wherein the glue is sticky glue, the support plate is a resin plate, the support plate is parallel to the net surface, and the spliced silicon material is arranged between the support plate and the net surface; after the splicing silicon material is bonded on the carrier plate, one side of the splicing silicon material, which faces the carrier plate, is a bonding surface of the splicing silicon material; taking one side of the spliced silicon material opposite to the bonding surface as the outer side surface of the spliced silicon material;
taking a gap between two adjacent silicon materials in the same row as an in-row splicing gap; taking a gap between two adjacent rows of silicon materials as an inter-row splicing gap; before the splicing silicon material is bonded on the carrier plate, the regions of the splicing gaps in the rows and the splicing gaps between the rows on the bonding surface are sealed by using an adhesive tape, so that glue is prevented from entering the splicing gaps in the rows and the splicing gaps between the rows during bonding; and the splicing gaps in the rows and the splicing gaps between the rows are sealed in the areas of the outer side surfaces by adopting the adhesive tapes.
When the silicon material is sliced according to the embodiment 2, diamond wires in the net surface penetrate through the spliced silicon material along the direction parallel to the cutting direction surface, and the cutting direction surface is inclined at a small angle relative to the row-inner splicing gaps, so that the diamond wires penetrate through the spliced silicon material along the direction slightly inclining to the row-inner splicing gaps. In addition, since the cutting direction plane is perpendicular to the inter-row splicing gap (the silicon materials in each row are arranged side by side, and the arrangement direction of the silicon materials in each row is perpendicular to the cutting direction plane, the inter-row splicing gap is perpendicular to the cutting direction plane), the diamond wire does not sink into the inter-row splicing gap.
The adhesive tapes in the embodiments 1 and 2 can adopt organic silicon pressure-sensitive adhesive tapes, the thickness of the adhesive tape is 0.03-0.1 mm, and the width of the adhesive tape is 2-10 mm; the base material of the adhesive tape needs to be made of high-temperature resistant materials such as PI, PP, PET, PVDF and the like, and the adhesive is organic silicon pressure-sensitive adhesive; the adhesive tape can not melt and fall off due to overhigh temperature during cutting, and no adhesive residue exists on the silicon wafer after being cut and torn.
The silicon material in the embodiments 1 and 2 may be monocrystalline silicon or polycrystalline silicon, and the silicon material may be cut from silicon rod edge skin material.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. The diamond wire cutting method for the spliced silicon material is characterized in that a diamond wire net without wire net wiring is adopted to slice the spliced silicon material, and a silicon wafer is cut from the spliced silicon material;
the diamond wire net comprises a net surface consisting of diamond wires; when slicing, the diamond wires in the net surface penetrate through and splice the silicon material along the direction parallel to a certain plane, and the plane is taken as a cutting direction plane;
the spliced silicon material is formed by splicing a row of silicon materials, or the spliced silicon material is formed by splicing at least two rows of silicon materials, and the rows of silicon materials are arranged side by side; the number of the silicon materials in the same row is at least two; the silicon materials in the same row are sequentially arranged along a certain arrangement direction, and the arrangement direction is vertical to the cutting direction; the splicing surfaces of all the silicon materials in the spliced silicon materials are parallel to each other by taking the splicing opposite surfaces of two adjacent silicon materials in the same row as splicing surfaces;
the splicing surface and the cutting direction surface are perpendicular to the net surface, and the included angle between the splicing surface and the cutting direction surface is 0.5-1.5 degrees;
before slicing, adhering the spliced silicon material on a support plate by adopting glue, wherein the support plate is parallel to the net surface, and the spliced silicon material is arranged between the support plate and the net surface;
taking a gap between two adjacent silicon materials in the same row as an in-row splicing gap; taking a gap between two adjacent rows of silicon materials as an inter-row splicing gap; after the splicing silicon material is bonded on the carrier plate, one side of the splicing silicon material, which faces the carrier plate, is a bonding surface of the splicing silicon material;
if the spliced silicon material is formed by splicing a row of silicon materials, before the spliced silicon material is bonded on the carrier plate, the region, located on the bonding surface, of the row of splicing gaps is sealed by using an adhesive tape, so that glue is prevented from entering the row of splicing gaps during bonding;
if the spliced silicon material is formed by splicing at least two rows of silicon materials, before the spliced silicon material is bonded on the carrier plate, the regions of the intra-row splicing gaps and the inter-row splicing gaps on the bonding surface are sealed by using an adhesive tape, so that glue is prevented from entering the intra-row splicing gaps and the inter-row splicing gaps during bonding;
taking one side of the spliced silicon material opposite to the bonding surface as the outer side surface of the spliced silicon material;
if the spliced silicon material is formed by splicing a row of silicon materials, before the spliced silicon material is bonded on the support plate, sealing the area, located on the outer side face, of the splicing gap in the row by using an adhesive tape;
if the splicing silicon material is formed by splicing at least two rows of silicon materials, before the splicing silicon materials are bonded on the support plate, the regions of splicing gaps in the rows and splicing gaps among the rows, which are positioned on the outer side surface, are sealed by using the adhesive tape.
2. A diamond wire cutting method for splicing silicon materials according to claim 1, wherein the splicing surface is subjected to grinding treatment.
3. A diamond wire cutting method for splicing silicon materials according to claim 1, wherein the distance between the splicing surfaces of two adjacent silicon materials in the same row is not more than 0.01 mm.
4. A diamond wire cutting method according to claim 1, wherein the spliced silicon material comprises end faces respectively arranged at both ends in the arrangement direction, and the end faces are parallel to the cutting direction face.
5. A diamond wire cutting method according to claim 4, wherein the spliced silicon material is a rectangular parallelepiped as a whole.
6. The diamond wire cutting method for splicing silicon materials according to claim 1, wherein the carrier plate is a resin plate.
7. A diamond wire cutting method for splicing silicon materials according to claim 1, wherein the glue is a rod glue.
8. A diamond wire cutting method for splicing silicon materials according to claim 1, wherein the adhesive tape is a silicone pressure sensitive adhesive tape having a high temperature resistant material as a base material.
9. The diamond wire cutting method for splicing silicon materials according to claim 1, wherein the silicon material is cut from silicon rod flaw-piece materials.
10. The diamond wire cutting method for splicing silicon materials according to claim 1, wherein the silicon material is monocrystalline silicon or polycrystalline silicon.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110175041.4A CN112757509B (en) | 2021-02-09 | 2021-02-09 | Diamond wire cutting method for splicing silicon materials |
| PCT/CN2021/118294 WO2022170761A1 (en) | 2021-02-09 | 2021-09-14 | Diamond wire cutting method for spliced silicon material |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110175041.4A CN112757509B (en) | 2021-02-09 | 2021-02-09 | Diamond wire cutting method for splicing silicon materials |
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| CN112757509A CN112757509A (en) | 2021-05-07 |
| CN112757509B true CN112757509B (en) | 2022-06-24 |
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| CN112757509B (en) * | 2021-02-09 | 2022-06-24 | 常州时创能源股份有限公司 | Diamond wire cutting method for splicing silicon materials |
| CN116811049A (en) * | 2023-08-09 | 2023-09-29 | 安徽华晟新材料有限公司 | Slicing method for bonding silicon rod |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3625408B2 (en) * | 1999-03-09 | 2005-03-02 | シャープ株式会社 | Machining method using multi-wire saw |
| CN101554757A (en) * | 2009-05-14 | 2009-10-14 | 浙江昱辉阳光能源有限公司 | Cutting method of crystalline silicon blocks |
| CN102294757A (en) * | 2011-08-08 | 2011-12-28 | 江西金葵能源科技有限公司 | Method for splicing short mono-crystal rods cut by using diamond wire |
| CN203611369U (en) * | 2013-12-03 | 2014-05-28 | 阿特斯(中国)投资有限公司 | Silicon wafer cutting device |
| CN108177260B (en) * | 2017-12-06 | 2020-08-18 | 苏州协鑫光伏科技有限公司 | Diamond wire cutting method for crystal silicon rod |
| CN111421686A (en) * | 2020-05-25 | 2020-07-17 | 青岛高测科技股份有限公司 | Cutting method for splicing novel silicon wafers into 166 silicon wafers |
| CN112757509B (en) * | 2021-02-09 | 2022-06-24 | 常州时创能源股份有限公司 | Diamond wire cutting method for splicing silicon materials |
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- 2021-09-14 WO PCT/CN2021/118294 patent/WO2022170761A1/en active Application Filing
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| WO2022170761A1 (en) | 2022-08-18 |
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