CN113115586A - 检测芯片及其制备方法和使用方法、反应系统 - Google Patents

检测芯片及其制备方法和使用方法、反应系统 Download PDF

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CN113115586A
CN113115586A CN201980002431.2A CN201980002431A CN113115586A CN 113115586 A CN113115586 A CN 113115586A CN 201980002431 A CN201980002431 A CN 201980002431A CN 113115586 A CN113115586 A CN 113115586A
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substrate
detection chip
layer
electrode
micro
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CN113115586B (zh
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赵子健
罗欣莹
邓睿君
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BOE Technology Group Co Ltd
Beijing BOE Technology Development Co Ltd
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Abstract

一种检测芯片及其制备方法和使用方法、反应系统，该检测芯片(100)包括第一基板(10)、微腔限定层(11)和加热电极(12)。微腔限定层(11)限定多个微反应室(110)。加热电极(12)配置为在通电之后释放热量。加热电极(12)包括第一电极部分(121)和至少一个第二电极部分(122)。多个微反应室(110)在第一基板(10)上的正投影位于第一电极部分(121)在第一基板(10)上的正投影内，多个微反应室(110)在第一基板(10)上的正投影与第二电极部分(122)在第一基板(10)上的正投影不重叠，第一电极部分(121)的电阻值大于第二电极部分(122)的电阻值。该检测芯片(100)控温效果好，升降温效率高，并且兼容半导体产线，生产成本低。

Description

PCT国内申请，说明书已公开。

Claims (20)

  1. PCT国内申请，权利要求书已公开。
CN201980002431.2A 2019-11-13 2019-11-13 检测芯片及其制备方法和使用方法、反应系统 Active CN113115586B (zh)

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CN114471755A (zh) * 2021-12-30 2022-05-13 上海天马微电子有限公司 微流控芯片及其制作方法
CN114471755B (zh) * 2021-12-30 2023-10-20 上海天马微电子有限公司 微流控芯片及其制作方法
US12134097B2 (en) 2021-12-30 2024-11-05 Shanghai Tianma Micro-electronics Co., Ltd. Microfluidic chip and fabrication method

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