CN113066924B - 薄膜压电感应元件及其制造方法、感测装置以及终端 - Google Patents
薄膜压电感应元件及其制造方法、感测装置以及终端 Download PDFInfo
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- CN113066924B CN113066924B CN202110290271.5A CN202110290271A CN113066924B CN 113066924 B CN113066924 B CN 113066924B CN 202110290271 A CN202110290271 A CN 202110290271A CN 113066924 B CN113066924 B CN 113066924B
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- piezoelectric
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- thin film
- conductor
- piezoelectric structure
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000010410 layer Substances 0.000 claims abstract description 351
- 239000004020 conductor Substances 0.000 claims abstract description 191
- 239000012790 adhesive layer Substances 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000005452 bending Methods 0.000 claims description 80
- 239000010408 film Substances 0.000 claims description 24
- 230000006698 induction Effects 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 4
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- 230000001939 inductive effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 18
- 239000000956 alloy Substances 0.000 description 15
- 229910045601 alloy Inorganic materials 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 238000013461 design Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 238000003825 pressing Methods 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000003698 laser cutting Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
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- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/03—Assembling devices that include piezoelectric or electrostrictive parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
- H10N30/057—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by stacking bulk piezoelectric or electrostrictive bodies and electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
- H10N30/503—Piezoelectric or electrostrictive devices having a stacked or multilayer structure having a non-rectangular cross-section in a plane orthogonal to the stacking direction, e.g. polygonal or circular in top view
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
- H10N30/503—Piezoelectric or electrostrictive devices having a stacked or multilayer structure having a non-rectangular cross-section in a plane orthogonal to the stacking direction, e.g. polygonal or circular in top view
- H10N30/505—Piezoelectric or electrostrictive devices having a stacked or multilayer structure having a non-rectangular cross-section in a plane orthogonal to the stacking direction, e.g. polygonal or circular in top view the cross-section being annular
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Measuring Fluid Pressure (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (14)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202110290271.5A CN113066924B (zh) | 2021-03-18 | 2021-03-18 | 薄膜压电感应元件及其制造方法、感测装置以及终端 |
Applications Claiming Priority (1)
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CN202110290271.5A CN113066924B (zh) | 2021-03-18 | 2021-03-18 | 薄膜压电感应元件及其制造方法、感测装置以及终端 |
Publications (2)
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CN113066924A CN113066924A (zh) | 2021-07-02 |
CN113066924B true CN113066924B (zh) | 2022-07-01 |
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CN202110290271.5A Active CN113066924B (zh) | 2021-03-18 | 2021-03-18 | 薄膜压电感应元件及其制造方法、感测装置以及终端 |
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JPWO2023048022A1 (zh) * | 2021-09-24 | 2023-03-30 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN100385699C (zh) * | 2001-10-30 | 2008-04-30 | 1...有限公司 | 压电器件和其制造方法 |
JP2011165846A (ja) * | 2010-02-09 | 2011-08-25 | Konica Minolta Medical & Graphic Inc | 有機圧電素子の製造方法、積層体および有機圧電素子 |
JP5558936B2 (ja) * | 2010-06-29 | 2014-07-23 | 富士フイルム株式会社 | 積層素子の製造方法及び積層素子 |
JP6300458B2 (ja) * | 2013-07-03 | 2018-03-28 | 三井化学株式会社 | 積層圧電素子 |
KR102381748B1 (ko) * | 2014-12-31 | 2022-04-01 | 엘지디스플레이 주식회사 | 다층 가변 소자 및 이를 포함하는 표시 장치 |
CN108389958B (zh) * | 2018-01-24 | 2021-12-03 | 业成科技(成都)有限公司 | 超声波振动元件和超声波传感器 |
CN112366272B (zh) * | 2020-10-28 | 2022-07-01 | 业成科技(成都)有限公司 | 压电感应组件及其制造方法 |
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Effective date of registration: 20240109 Address after: 518109, Building E4, 101, Foxconn Industrial Park, No. 2 East Ring 2nd Road, Fukang Community, Longhua Street, Longhua District, Shenzhen City, Guangdong Province (formerly Building 1, 1st Floor, G2 District), H3, H1, and H7 factories in K2 District, North Shenchao Optoelectronic Technology Park, Minqing Road, Guangdong Province Patentee after: INTERFACE OPTOELECTRONICS (SHENZHEN) Co.,Ltd. Patentee after: Interface Technology (Chengdu) Co., Ltd. Patentee after: GENERAL INTERFACE SOLUTION Ltd. Address before: No.689 Hezuo Road, West District, high tech Zone, Chengdu City, Sichuan Province Patentee before: Interface Technology (Chengdu) Co., Ltd. Patentee before: INTERFACE OPTOELECTRONICS (SHENZHEN) Co.,Ltd. Patentee before: Yicheng Photoelectric (Wuxi) Co.,Ltd. Patentee before: GENERAL INTERFACE SOLUTION Ltd. |
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