CN113066923B - All-static solid refrigerator and preparation method thereof - Google Patents
All-static solid refrigerator and preparation method thereof Download PDFInfo
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- CN113066923B CN113066923B CN202110259920.5A CN202110259920A CN113066923B CN 113066923 B CN113066923 B CN 113066923B CN 202110259920 A CN202110259920 A CN 202110259920A CN 113066923 B CN113066923 B CN 113066923B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B21/00—Machines, plants or systems, using electric or magnetic effects
- F25B21/02—Machines, plants or systems, using electric or magnetic effects using Peltier effect; using Nernst-Ettinghausen effect
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Abstract
The invention discloses a full-static solid refrigerator and a preparation method thereof, wherein the full-static solid refrigerator comprises: the system comprises a first electric card refrigerator, a thermoelectric refrigerator stacked on the surface of the first electric card refrigerator and a second electric card refrigerator stacked on the surface of the thermoelectric refrigerator; the first electric card refrigerator and the second electric card refrigerator are identical in structure; the first electric card refrigerator includes: the device comprises a substrate and a dielectric material layer with positive and negative electric clamping effects, wherein the dielectric material layer is deposited on the surface of the substrate. The all-static solid refrigerator based on the electrocaloric-thermoelectric effect has the characteristics of low working temperature, good temperature adjusting effect, long service life, no moving part, wide working temperature range, high refrigerating efficiency, high stability and high reliability.
Description
Technical Field
The invention relates to the technical field of solid refrigeration, in particular to a full-static solid refrigerator and a preparation method thereof.
Background
With the development of microelectronic technology, the integration level of electronic devices is getting larger and larger, and electronic chips are in the development trend of miniaturization and high integration level. The high integration level causes the power consumption of the chip to be larger and larger, the electronic chip can generate a large amount of heat in the working process, and the heat accumulation can cause the thermal failure of the chip. At present, 55% of all failure phenomena of electronic devices are caused by thermal failure. Therefore, the refrigeration technology of the electronic chip is the guarantee for realizing the stable work of the electronic chip, and plays a key role in the miniaturization of the chip and the electronic equipment.
In recent years, the thermal reliability design of electronic products is more and more emphasized in the domestic electronic industry, particularly in the aviation and aerospace industries, and the requirements of higher refrigeration efficiency, wider refrigeration temperature range, smaller volume of a refrigerator and the like are provided for the thermal design of electronic components. Conventional heat dissipation techniques are accelerating to near their limits. Air-cooled heat sinks alone are still used in many heat dissipation applications, but are limited to low heat flux densities, and when the heat flux density of the device is high, the performance of the device is completely inadequate for heat dissipation. It is difficult to directly use the conventional mechanical compression type equipment for refrigeration due to miniaturization and miniaturization of electronic devices. Compared with adiabatic demagnetization refrigeration, the electric card refrigeration utilizing the electric card effect of the dielectric material and the electric refrigeration utilizing the thermoelectric refrigeration of the semiconductor Peltier effect are technically easy to realize and realize miniaturization, and are in line with the development of microelectronic devices.
In the existing stage of electric card refrigeration, the ferroelectric material is utilized to change the polarization of the ferroelectric material through an external electric field under the heat insulation condition to cause temperature change so as to realize refrigeration. However, the electrical seizing effect of the dielectric material has temperature dependence, i.e. the temperature dependence of the electrical seizing effect leads to a narrow operating temperature range of the device, on the other hand, the current stage electrical seizing refrigerators use a reciprocating quasi-static structure to achieve refrigeration based on the positive electrical seizing effect of the dielectric material, i.e. a motor is used to bring the dielectric material alternately into contact with the cold and hot sides to transport heat. The reciprocating quasi-static single-electric-card refrigerator has the defects of difficult miniaturization, mechanical disturbance, high noise, low reliability and the like, so that the refrigerator is difficult to be used for refrigerating micro devices such as electronic devices and the like.
Therefore, the prior art is still to be further improved.
Disclosure of Invention
In view of the above-mentioned deficiencies of the prior art, the present invention provides a fully static solid state refrigerator and a method for manufacturing the same, so as to solve the problems of mechanical disturbance of the existing single-electric-card-effect-based electric card refrigerator and low refrigeration efficiency of the thermoelectric refrigeration.
In a first aspect, an embodiment of the present invention provides an all-static solid refrigerator, including:
the system comprises a first electric card refrigerator, a thermoelectric refrigerator stacked on the surface of the first electric card refrigerator and a second electric card refrigerator stacked on the surface of the thermoelectric refrigerator;
the first electric card refrigerator and the second electric card refrigerator are identical in structure;
the first electric card refrigerator includes: the device comprises a substrate and a dielectric material layer with positive and negative electric clamping effects, wherein the dielectric material layer is deposited on the surface of the substrate.
Optionally, the all-static solids refrigerator, wherein the first electrocaloric refrigerator specifically comprises: the chip comprises a heat conduction insulating substrate, a first electrode and a second electrode which are deposited on the surface of the heat conduction insulating substrate, a negative electric card layer which is deposited on the surface of the first electrode, a positive electric card layer which is deposited on the surface of the second electrode and a third electrode which is deposited on the surfaces of the negative electric card layer and the positive electric card layer.
Optionally, the all-static solid refrigerator, wherein the dielectric material layer is made of one material selected from barium titanate, lead titanate, doped barium titanate, hafnium oxide, polyvinylidene fluoride, and bismuth niobate.
Optionally, the all-static solid refrigerator, wherein the doping element in the doped lead titanate and the doped barium titanate is selected from one of manganese, strontium, zirconium, lanthanum and dysprosium.
Optionally, the all-static solid state refrigerator, wherein the layer of dielectric material has a thickness of 0.05 μm to 1nm.
Optionally, the all static solids chiller, wherein the thermoelectric chiller comprises: the semiconductor device comprises a ceramic substrate, a p-type semiconductor material layer and an n-type semiconductor material layer, wherein the p-type semiconductor material layer and the n-type semiconductor material layer are deposited on the surface of the ceramic substrate and are mutually independent.
Optionally, the all-static solid-state refrigerator, wherein the p-type semiconductor layer and the n-type semiconductor layer are made of bismuth telluride or magnesium bismuthate.
Optionally, the all static solid state refrigerator, wherein the p-type semiconductor layer or the n-type semiconductor layer has a thickness of 0.05-500 μm.
In a second aspect, an embodiment of the present invention provides a method for preparing an all-static solid refrigerator, where the method includes:
providing a first substrate;
depositing a first electrode and a second electrode on the surface of the first substrate, wherein the first electrode and the second electrode are independent from each other;
depositing a negative electric card layer on the surface of the first electrode, and depositing a positive electric card layer on the surface of the second electrode;
depositing a third electrode on the surfaces of the positive electricity card layer and the negative electricity card layer to obtain an electricity card refrigerator;
providing a second substrate;
depositing a fourth electrode and a fifth electrode on the surface of the second substrate, wherein the fourth electrode and the fifth electrode are independent from each other;
depositing an n-type semiconductor material layer on the surface of the fourth electrode, and depositing a p-type semiconductor material layer on the surface of the fifth electrode;
depositing a sixth electrode on the surfaces of the n-type semiconductor material layer and the p-type semiconductor material layer to obtain a thermoelectric refrigerator;
the electric card refrigerator comprises a first electric card refrigerator and a second electric card refrigerator, and the second electric card refrigerator, the thermoelectric refrigerator and the first electric card refrigerator are sequentially stacked to obtain the all-static solid refrigerator.
Optionally, in the preparation method of the all-static solid refrigerator, the second substrate is made of alumina ceramic or mica sheet.
Has the advantages that: the embodiment of the invention provides an all-static solid refrigerator which has the characteristics of low working temperature, good temperature regulation effect, long service life, no moving part, wide working temperature range, high refrigeration efficiency, high stability and high reliability.
Drawings
FIG. 1 is a schematic diagram of an electric card refrigerator of an all-static solid refrigerator according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a thermoelectric refrigerator in an all-static solid refrigerator according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of an all-static solid refrigerator according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of heat transfer for an all-static solids refrigerator provided by an embodiment of the present invention.
Detailed Description
The invention provides a fully static solid refrigerator and a preparation method thereof, and the invention is further described in detail below in order to make the purpose, technical scheme and effect of the invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
The embodiment of the invention provides a fully static solid refrigerator, which comprises: the electric card refrigerator consists of a dielectric material with positive electric card effect and negative electric card effect and a heat-conducting insulating substrate; a thermoelectric refrigerator composed of p-type and n-type semiconductor materials and a ceramic substrate; the thermoelectric refrigerator and the electric card refrigerator are connected together through the heat-conducting insulating substrate to form the all-static solid refrigerator.
In this embodiment, the all-static solid refrigerator provided has the characteristics of low working temperature, good temperature regulation effect, long service life, no moving part, wide working temperature range and high refrigeration efficiency.
Illustratively, as shown in fig. 1-3, the all-static solids chiller comprises: first electric card refrigerator 10, thermoelectric refrigerator 20, and second electric card refrigerator 30, wherein the first electric card refrigerator and the second electric card refrigerator 30 have the same structure. The first electric card refrigerator includes: the substrate is a heat-conducting insulating substrate 11, and a first electrode 12 and a second electrode 13 are respectively coated on the upper surface of the heat-conducting insulating substrate 11, and it is easily understood that the first electrode 12 and the second electrode 13 are independently and separately arranged; a negative electrode card layer 14 deposited on the upper surface of the first electrode 12, a positive electrode card layer 15 deposited on the upper surface of the second electrode 13, and a third electrode 16 coated on the upper surfaces of the negative electrode card layer 14 and the positive electrode card layer 15. The thermoelectric refrigerator includes: the ceramic substrate 21, a fourth electrode 22 coated on the upper surface of the ceramic substrate 21, a fifth electrode 23, wherein the fourth electrode 22 and the fifth electrode 23 are separately and independently arranged; an n-type semiconductor material layer 24 is deposited on the upper surface of the fourth electrode 22, a p-type semiconductor material layer 25 is deposited on the upper surface of the fifth electrode, and a sixth electrode 26 is deposited on the upper surfaces of the n-type semiconductor material layer 24 and the p-type semiconductor material layer 25.
It should be noted that, since the first electric card refrigerator 10 and the second electric card refrigerator 30 have the same structure, the second electric card refrigerator 30 will not be described in detail herein. The lower surface of the ceramic substrate of thermoelectric refrigerator 20 is in contact with the upper surface of the third electrode in first electric card refrigerator 10, that is, thermoelectric refrigerator 20 is stacked above first electric card refrigerator 10, and second electric card refrigerator 30 is stacked on the upper surface of the sixth electrode in the thermoelectric refrigerator, so as to form a fully static solid refrigerator.
With reference to fig. 4, in the present embodiment, the operating principle of the all-solid-state refrigerator is as follows:
the first electric card refrigerator of the all-static solid refrigerator is contacted with the refrigerated end, firstly, the cold-end electric card refrigerator connected with the refrigerated end works, heat is absorbed from the cold end by utilizing the negative electricity card effect, and the thermoelectric refrigerator does not work at the moment; then, the cold-end electric card refrigerator stops working, the thermoelectric refrigerator works, and heat is transported to the hot-end electric card refrigerator connected with the heat dissipation end by utilizing the thermoelectric effect; and finally, stopping the operation of the thermoelectric refrigerator, operating the hot-end electric card refrigerator, transporting heat from the thermoelectric refrigerator to the outside by utilizing the positive electric card effect, and repeating the process to finally realize refrigeration.
In one implementation of this embodiment, the dielectric material in the electric card refrigerator includes, but is not limited to, barium titanate, lead titanate, doped barium titanate, hafnium oxide, polyvinylidene fluoride, bismuth niobate, and the like.
Further, the doped elements in the doped lead titanate and the doped barium titanate can be manganese, strontium, zirconium, lanthanum and dysprosium, and the lead titanate and the barium titanate can be doped with the manganese, strontium, zirconium, lanthanum and dysprosium to have a negative electrocaloric effect. The types of the negative electricity card materials are enlarged through doping, and the selection of the negative electricity card materials is facilitated.
In one implementation of the present invention, the dielectric material in the electric card refrigerator may be a single layer or multiple layers, that is, the negative electric card layer may be a single layer or multiple layers, and the positive electric card layer may be a single layer or multiple layers, for example, the negative electric card layer is 1 to 10 layers, 10 to 20 layers, 20 to 30 layers, 30 to 40 layers, 40 to 50 layers, 50 to 60 layers, 60 to 70 layers, 70 to 80 layers, 80 to 90 layers, 90 to 100 layers; the positive electrical card layer is 1 to 10 layers, 10 to 20 layers, 20 to 30 layers, 30 to 40 layers, 40 to 50 layers, 50 to 60 layers, 60 to 70 layers, 70 to 80 layers, 80 to 90 layers, 90 to 100 layers.
The number of layers of the negative electrical card layer may be the same as or different from the number of layers of the positive electrical card layer. For example, the number of the negative electrical card layers is 50, the number of the positive electrical card layers may be 50, or may be 60, and the number of the positive electrical card layers and the number of the negative electrical card layers may be selected according to actual use. Meanwhile, as the number of layers of the positive or negative electrical card layers increases, i.e., the thickness is larger, the voltage required for operation is higher, but the corresponding amount of heat absorbed is larger.
In one implementation of this embodiment, the dielectric material monolayer in the electrocaloric refrigerator has a thickness of 0.05 μm to 1.0 μm,1.0 μm to 1.5 μm,1.5 μm to 2.0 μm,2.0 μm to 3.0 μm,3.0 μm to 4.0 μm,4.0 μm to 5.0 μm,5.0 μm to 6.0 μm,6.0 μm to 7.0 μm,7.0 μm to 8.0 μm,8.0 μm to 9.0 μm,9.0 μm to 10 μm.
In one implementation of this embodiment, the dielectric material (electrocaloric material) in the electrocaloric refrigerator may be prepared by isosolid phase sintering, sputtering, etc., wherein the isosolid phase sintering means that the same amount of mixed powder is used, and the mixed powder is diffused at high temperature to form a continuous solid structure, so that the free energy of the mixed powder is reduced and the strength is improved. The sputtering is a process of bombarding the surface of a solid by particles (ions or neutral atoms and molecules) with certain energy to make the atoms or molecules near the surface of the solid obtain enough energy and finally escape from the surface of the solid. The electrocaloric material with a compact structure can be obtained by preparing the electrocaloric material through isochronal phase sintering and sputtering.
In one implementation of this embodiment, the p-type and n-type semiconductor materials in the thermoelectric cooler include, but are not limited to: bismuth telluride, magnesium bismuthate, and the like. The thickness of the p-type semiconductor material layer or the n-type semiconductor material layer may be 0.05 μm to 5 μm,5 μm to 10 μm,10 μm to 20 μm,20 μm to 50 μm,50 μm to 100 μm,100 μm to 150 μm,150 μm to 200 μm,200 μm to 300 μm,300 μm to 400 μm,400 μm to 500 μm.
The p-type semiconductor layer and the p-type semiconductor layer may have the same or different thicknesses, and for example, the p-type semiconductor layer may have a thickness of 200 μm, and the n-type semiconductor layer may have a thickness of 200 μm,300 μm, or 100 μm. The thickness of the p-type semiconductor layer and the thickness of the n-type semiconductor layer can be set according to actual needs.
In one implementation of this embodiment, the electrode material in the all-static solid state refrigerator includes, but is not limited to, copper-nickel alloy, silver, platinum, and the like. That is, the material of the first electrode may be copper, the material of the second electrode may be copper, the material of the third electrode may be silver, the material of the fourth electrode and the material of the fifth electrode may be a copper-nickel alloy, and the material of the sixth electrode may be platinum.
In one implementation manner of the embodiment, the substrate material in the thermoelectric refrigerator may be alumina ceramic, mica sheet, or the like, and has good insulating and heat conducting effects.
Based on the same inventive concept, the embodiment of the invention also provides a preparation method of the all-static solid refrigerator, which comprises the following steps:
providing a first substrate;
depositing a first electrode and a second electrode on the surface of the first substrate, wherein the first electrode and the second electrode are independent from each other;
depositing a negative electric card layer on the surface of the first electrode, and depositing a positive electric card layer on the surface of the second electrode;
depositing a third electrode on the surfaces of the positive electricity card layer and the negative electricity card layer to obtain an electricity card refrigerator;
providing a second substrate;
depositing a fourth electrode and a fifth electrode on the surface of the second substrate, wherein the fourth electrode and the fifth electrode are independent from each other;
depositing an n-type semiconductor material layer on the surface of the fourth electrode, and depositing a p-type semiconductor material layer on the surface of the fifth electrode;
depositing a sixth electrode on the surfaces of the n-type semiconductor material layer and the p-type semiconductor material layer to obtain a thermoelectric refrigerator;
the electric card refrigerator comprises a first electric card refrigerator and a second electric card refrigerator, and the thermoelectric refrigerator and the second electric card refrigerator are sequentially stacked on the first electric card refrigerator to obtain the all-static solid refrigerator.
Specifically, the first electric card refrigerator and the second electric card refrigerator may be prepared first, and then the thermoelectric refrigerator may be prepared, or the thermoelectric refrigerator may be prepared first, and then the first electric card refrigerator and the second electric card refrigerator may be prepared, that is, the order of preparation is not limited. The method comprises the steps of providing a substrate for preparing a first electric card refrigerator, such as a heat-conducting insulating substrate, preparing electric card material slurry, such as barium titanate slurry, preparing a positive electric card layer by adopting a flow casting method, preparing manganese-doped lead titanate slurry, and preparing a negative electric card layer by adopting the flow casting method. The thickness of the electrical card layer may be 0.5-10 microns, for example, the thickness of the positive electrical card layer is 2 microns, and the thickness of the negative electrical card layer may be 3 microns.
And preparing a second electrode and a first electrode on the heat-conducting insulating substrate by adopting a sputtering method, wherein the second electrode is matched with the positive electric card layer, and the first electrode is matched with the negative electric card layer. The thickness of the first electrode and the second electrode can be 200nm, copper foils are connected with the positive electricity card layer and the negative electricity card layer through silver paste on the other surfaces of the positive electricity card layer and the negative electricity card layer to form a third electrode, after the electrodes are prepared, the positive electricity card layer and the negative electricity card layer coated with the electrodes are prepared on a heat-conducting insulating substrate to obtain a first electricity card refrigerator, and a second electricity card refrigerator can be obtained through a preparation method which is the same as that for preparing the first electricity card refrigerator.
Preparing a thermoelectric refrigerator, providing a substrate made of alumina ceramics, preparing a p-type semiconductor layer and an n-type semiconductor layer by taking p-type and n-type bismuth telluride materials as raw materials, preparing an electrode by taking copper as an electrode material, welding and connecting the p-type semiconductor layer, the n-type semiconductor layer and a copper electrode layer together, and connecting with the substrate made of the alumina ceramics to form the thermoelectric refrigerator.
And connecting the thermoelectric cooler with the first electric card cooler and connecting the second electric card cooler with the thermoelectric cooler to obtain the all-static solid cooler.
In summary, the present invention provides an all-static solid refrigerator and a method for manufacturing the same, the all-static solid refrigerator comprising: the system comprises a first electric card refrigerator, a thermoelectric refrigerator stacked on the surface of the first electric card refrigerator and a second electric card refrigerator stacked on the surface of the thermoelectric refrigerator; the first electric card refrigerator and the second electric card refrigerator are identical in structure; the first electric card refrigerator includes: the device comprises a substrate and a dielectric material layer with positive and negative electric clamping effects, wherein the dielectric material layer is deposited on the surface of the substrate. The all-static solid refrigerator based on the electrocaloric-thermoelectric effect has the characteristics of low working temperature, good temperature adjusting effect, long service life, no moving part, wide working temperature range, high refrigerating efficiency, high stability and high reliability.
It will be understood that the invention is not limited to the examples described above, but that modifications and variations will occur to those skilled in the art in light of the above teachings, and that all such modifications and variations are considered to be within the scope of the invention as defined by the appended claims.
Claims (9)
1. An all-static solids refrigerator, comprising:
the system comprises a first electric card refrigerator, a thermoelectric refrigerator stacked on the surface of the first electric card refrigerator and a second electric card refrigerator stacked on the surface of the thermoelectric refrigerator;
the first electric card refrigerator and the second electric card refrigerator are identical in structure;
the first electric card refrigerator includes: the device comprises a substrate and a dielectric material layer with positive electric card effect and negative electric card effect, wherein the dielectric material layer is deposited on the surface of the substrate;
the first electrocaloric refrigerator specifically comprises: the heat-conducting insulating substrate comprises a first electrode, a second electrode, a negative electricity card layer, a positive electricity card layer and a third electrode, wherein the first electrode and the second electrode are deposited on the surface of the heat-conducting insulating substrate; wherein the first electrode and the second electrode are independent of each other;
the thermoelectric refrigerator includes: the ceramic substrate is coated with a fourth electrode and a fifth electrode on the upper surface of the ceramic substrate, and the fourth electrode and the fifth electrode are separately and independently arranged; and depositing an n-type semiconductor material layer on the upper surface of the fourth electrode, depositing a p-type semiconductor material layer on the upper surface of the fifth electrode, and depositing a sixth electrode on the upper surfaces of the n-type semiconductor material layer and the p-type semiconductor material layer.
2. The all-static solid refrigerator according to claim 1, wherein the material of the dielectric material layer is selected from one of barium titanate, lead titanate, doped barium titanate, hafnium oxide, polyvinylidene fluoride, and bismuth niobate.
3. The all-static solid refrigerator according to claim 2, wherein the doping element in the doped lead titanate and the doped barium titanate is selected from one of manganese, strontium, zirconium, lanthanum and dysprosium.
4. The all-static solid refrigerator according to claim 1, wherein the dielectric material layer has a thickness of 0.05 μm-1nm.
5. The all-static solid refrigerator according to claim 1, wherein the p-type semiconductor material layer and the n-type semiconductor material layer are independent of each other.
6. The all-static solid refrigerator according to claim 5, wherein the p-type semiconductor material layer and the n-type semiconductor material layer are made of bismuth telluride or magnesium bismuthate.
7. The all static solid refrigerator according to claim 5, wherein the thickness of the p-type semiconductor material layer or the n-type semiconductor material layer is 0.05-500 μm.
8. A method of making an all static solid freeware comprising:
providing a first substrate;
depositing a first electrode and a second electrode on the surface of the first substrate, wherein the first electrode and the second electrode are independent from each other;
depositing a negative electric card layer on the surface of the first electrode, and depositing a positive electric card layer on the surface of the second electrode;
depositing a third electrode on the surfaces of the positive electricity card layer and the negative electricity card layer to obtain an electricity card refrigerator;
providing a second substrate;
depositing a fourth electrode and a fifth electrode on the surface of the second substrate, wherein the fourth electrode and the fifth electrode are independent from each other;
depositing an n-type semiconductor material layer on the surface of the fourth electrode, and depositing a p-type semiconductor material layer on the surface of the fifth electrode;
depositing a sixth electrode on the surfaces of the n-type semiconductor material layer and the p-type semiconductor material layer to obtain a thermoelectric refrigerator;
the electric card refrigerator comprises a first electric card refrigerator and a second electric card refrigerator, and the second electric card refrigerator, the thermoelectric refrigerator and the first electric card refrigerator are sequentially stacked to obtain the all-static solid refrigerator.
9. The method according to claim 8, wherein the second substrate is made of alumina ceramic or mica sheet.
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| GB2292830B (en) * | 1994-09-02 | 1998-02-25 | Harold Aspden | Thermoelectric heat transfer apparatus |
| WO2006056809A1 (en) * | 2004-11-29 | 2006-06-01 | Cambridge University Technical Services Limited | Solid state electrocaloric cooling devices and methods |
| WO2007001290A1 (en) * | 2005-06-24 | 2007-01-04 | Carrier Corporation | A combination thermo-electric and magnetic refrigeration system |
| CN100570488C (en) * | 2005-11-21 | 2009-12-16 | 中国科学院电工研究所 | Cooler of static chuck of extreme ultraviolet photolithographic mask platform |
| CN104296416B (en) * | 2013-10-29 | 2016-07-27 | 程爱兰 | Backheat electricity card refrigerating plant |
| CN106123391A (en) * | 2016-06-21 | 2016-11-16 | 上海工程技术大学 | A kind of all solid state electricity card refrigerator |
| US10451321B2 (en) * | 2016-09-02 | 2019-10-22 | General Engineering & Research, L.L.C. | Solid state cooling device |
| CN111174461B (en) * | 2020-02-19 | 2021-05-18 | 武汉理工大学 | Thermoelectric refrigeration and magnetic card refrigeration composite refrigeration device and method based on thermal switch |
| CN111998571B (en) * | 2020-09-08 | 2021-12-10 | 南京理工大学 | Heat abstractor based on electro-magnet removes electricity card refrigeration device |
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