CN100570488C - Cooler of static chuck of extreme ultraviolet photolithographic mask platform - Google Patents
Cooler of static chuck of extreme ultraviolet photolithographic mask platform Download PDFInfo
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- CN100570488C CN100570488C CNB2005100869376A CN200510086937A CN100570488C CN 100570488 C CN100570488 C CN 100570488C CN B2005100869376 A CNB2005100869376 A CN B2005100869376A CN 200510086937 A CN200510086937 A CN 200510086937A CN 100570488 C CN100570488 C CN 100570488C
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Abstract
A kind of cooler of static chuck of extreme ultraviolet photolithographic mask platform, array thermoelectric refrigerating unit [4] are positioned at electrostatic chuck [2] card bottom, and refrigerator cold junction insulating heat-conductive plate [302] contacts with electrostatic chuck [2] planar disk bottom; Mask plate [1] is by Electrostatic Absorption power, attached to electrostatic chuck [2] card top.Array thermoelectric refrigerating unit [4] is made of some concentric square frame shape thermoelectric cooling zones from the wherein outer division of mind-set, each refrigerated area is divided into some thermoelectric refrigerating unit unit [3] again, and each refrigerator unit [3] is capable by m, the thermopair of n row constitutes [400] series connection; Thermopair is formed by connecting by conductive copper plate by a N-type semiconductor and a P-type semiconductor to [400].Thermopair in the same refrigerator unit [3] is to [400] series-fed, and electric current is identical, and cold junction temperature is identical.The present invention only needs the control input current under the prerequisite that conditions such as voltage, material, resistance and hot-side temperature are determined, get final product the temperature and the refrigerating capacity of array of controls formula thermoelectric refrigerating unit unit cold junction.
Description
Technical field
The present invention relates to a kind of extreme ultraviolet photolithographic mask platform cooling device, particularly the refrigeratory of static chuck of extreme ultraviolet photolithographic mask platform.
Background technology
The projection lithography technology is a cutting edge technology of IC lithography process, it utilizes being synchronized with the movement of mask platform and work stage, project to the figure on the mask on the wafer that scribbles resist by the micro optical system, through technologies such as typing, developments, finally on wafer, copy figure again with reduction magnification.Extreme ultraviolet photolithographic (EUVL) is the most potential photoetching process of future generation.The EUVL technology is utilized the extreme ultraviolet light source of wavelength for 13.4nm, reduction projection by the multi-layer mirror formation, in vacuum environment, the mask pattern is copied on the silicon chip, realization has the visual field of exposing thoroughly, high resolution, and can satisfy the following high resolution lithography technology of 70nm of IC commercial productivity needs.
Extreme ultraviolet photolithographic has adopted reflection type mask plate and the reflective optical system that is different from traditional photoetching process, and its working environment is a vacuum.Mask plate is fixed on by Electrostatic Absorption power on the electrostatic chuck of mask platform, with the source reflection of multi-layer mirror projection to silicon chip.Fig. 1,2 is the structural representation and the side view of mask plate.Mask plate is made up of 203 substrates, 202Mo/Si (molybdenum/silicon) multilayer film and 201 absorption layers, three parts, and Fig. 1 is the mask plate structure synoptic diagram.Backing material is devitrified glass (a low linear expansion coefficient), compares with traditional silicon substrate, and its thermal expansivity is very little, can effectively reduce thermal deformation, and the physical dimension of substrate is 152mm * 152mm * 6.35mm.Be covered with 41 layers Mo/Si bimolecular multilayer film 202 on the substrate, its gross thickness is 282nm, is that the reflectivity of the 201 extreme ultraviolet 202Mo/Si multilayer films of 13.4nm can reach 67% for wavelength.In area was 101 graphics fields of 100mm * 100mm, deposition materials was the TiN absorption layer 201 of thickness 100nm on the Mo/Si multilayer film, absorption layer for the absorptivity of extreme ultraviolet near 100%.If covered with absorption layer, then the EUV light of 101 graphics fields is all by 100% absorption in the graphics field, and there is 33% EUV light be absorbed in 103 non-graphics fields.
Because at 13.4nm wavelength place, most of materials have very strong absorptivity to extreme ultraviolet, so mask plate can absorb extreme ultraviolet and thermal deformation occur.As introducing in the document 1: " Impact of thermal and structuraleffects on EUV lithography performance ", Avijit K.Ray-Chaudhuri, Steven E.Gianoulakis and Paul A.Spence, et al, SPIE Emerging Lithography TechnologiesII, Vol.3331, pp.124-132,1999, the thermal deformation of mask plate has following influence to lithography performance: influence CD control, cause map migration, cause the alignment precision error.
The size of mask plate thermal deformation and incident optical power, backing material are relevant with factors such as mask plate and heat exchange with outside.The resist photosensitive property is good more, and required incident light energy is more little.The mask plate substrate must be chosen the big and thermal expansivity materials with smaller of thermal conductivity.Aspect mask plate and heat exchange with outside heat transfer,, therefore can only rely on the heat conduction between mask plate and electrostatic chuck and the heat in the mask plate is derived with two kinds of heat transfer types of heat radiation in extraneous space because working environment is vacuum.If will increase the heat radiation heat transfer of mask plate and vacuum environment, then need to increase the emissivity of mask plate material, and in thermal conduction study, the object that can launch must absorb, so they are two amounts of contradiction, thereby do not have too much research work in this respect.
Existing extreme ultraviolet photolithographic mask plate Control Thermal Deformation technology mainly concentrates in the heat conduction of strengthening mask plate and electrostatic chuck, and the main means of taking have: (1) seeks the backing material that thermal expansivity is little, thermal conductivity is big; (2) the heat transmission between reinforcement mask plate substrate and electrostatic chuck.Wherein document 2: " Assessment of heat deformationand throughput for selecting mask substrate material for extreme ultravioletlithography ", Akira CHIBA, Minoru SUGAWARA and Hiromasa YAMANASHI, etal, Jpn.J.Appl.Phys.Vol.41, pp.6498-6505,2002, in introduced at present tool application prospect material be devitrified glass, it has the little characteristics of thermal expansivity, is about 0.02ppm/K.And the silicon materials that adopt as substrate more in the former research, and its thermal expansivity is 2.5ppm/K.Because the thermal expansivity of devitrified glass is little a lot of than silicon materials, thereby just reduce much by the malformation that heat causes.And with the heat interchange in the external world in, thermal deformation has the greatest impact for mask plate be mask plate with electrostatic chuck between contact heat-conduction coefficient, different way of contact contact heat-conduction coefficient differences.Document 3: " Thermomechanical modeling of the pin-chucked EUV reticle duringexposure ", Alexander C.Wei, Carl J.Martina, William A.Beckman, et al, Proceedings of SPIE Vol.4688 (2002): 743～754, and document 4: " Thermal managementof EUV lithography masks using low expansion glass substrates ", S.E.Gianoulakisand A.K.Ray-Chaudhuri, SPIE Emerging Lithography Technologies III, Vol.3996, pp.598-605,1999, in all by processing microspike with Micrometer-Nanometer Processing Technology in mask plate substrate bottom, the contact of formation pin type, and with between helium or nitrogen introducing mask plate and electrostatic chuck, can be with contact heat transfer coefficient by 4W/m
2K increases to 150W/m
2K.But for EUVL, the gas introducing apparatus that its uses problem that leaks air easily, thereby be not suitable for the vacuum operation environment of EUVL.
US patent 2004/6806007B1 discloses the mask arrangement of a kind of EUV of reducing mask graph skew and thermal deformation, and it is the liner with electrostatic chuck touching position processing hollow out in the mask substrate bottom.When its characteristics are to reduce mask plate and contact with chuck, owing to the contact position molecule causes the map migration that the mask plate out-of-flatness causes; By increasing the single or multiple lift liner, also can strengthen the thermal contact conductance coefficient between mask and electrostatic chuck simultaneously, reduce the thermal deformation of mask.But this has increased the making complicacy of mask plate.
Summary of the invention
At the defective of the mask plate heat distortion that exists in the existing extreme ultraviolet photolithographic, technical matters to be solved by this invention provides a kind of mask platform cooler of static chuck that is applicable to the operation of extreme ultraviolet photolithographic vacuum environment.The present invention can reduce mask plate owing to the thermal deformation that the irradiation of EUV reflected light causes, improves lithography performance.
The present invention mainly comprises electrostatic chuck, the thermoelectric refrigerating unit of mask plate and employing array architecture.The array thermoelectric refrigerating unit is positioned at the bottom of electrostatic chuck card, and mask plate passes through Electrostatic Absorption power attached to electrostatic chuck card top.
The array thermoelectric refrigerating unit is by M (M=I, II, III ... M) the outside concentric square frame shape thermoelectric cooling zone of dividing constitutes piece from thermoelectric refrigerator center, and each square frame shape thermoelectric cooling zone is divided into k (k=1 again, 2,3 ... k) piece thermoelectric refrigerating unit unit, each refrigerator unit is capable by m again, the thermopair of n row constitutes (m=1,2 to series connection, 3 ... m, n=1,2,3 ... n).The number in square frame shape thermoelectric cooling zone determines that according to the Temperature Distribution of mask plate before uncolled promptly the temperature difference is provided with concentric square frame shape thermoelectric cooling zone 0.5 ℃～1 ℃ position between mask plate with one heart; The area in square frame shape thermoelectric cooling zone is determined by the area of extreme ultraviolet light beam scanning and the area of graph area with one heart.Can be according to mask plate reflected light light area area, right physical dimension and the right thermodynamic behaviour of thermopair of thermopair, the number of choose reasonable m, n, being typically chosen in the area of 40mm * 40mm has 127 pairs of thermopairs, and the thickness of unit refrigerator is about about 4mm.
Thermopair is to being formed by connecting by conductive copper plate by a N-type semiconductor and a P-type semiconductor.As electric current by thermopair to the time, energy will take place shift, the generation cool effect of will absorbing heat in the copper coin junction.The thermopair of same refrigerator unit is to series-fed, and electric current is identical, and cold junction temperature is identical.The cold junction temperature of the thermoelectric refrigerating unit unit in the same concentric square frame shape thermoelectric cooling zone is identical.
If being close to the concentric square frame shape thermoelectric cooling zone cold junction temperature of electrostatic chuck center position is T
I, the concentric square frame shape thermoelectric cooling zone cold junction temperature at chuck marginal position place is T
M, then the computing formula of the concentric square frame shape thermoelectric cooling zone cold junction temperature distribution in the array thermoelectric refrigerating unit is: T
M=T
I+ (M-1) Δ T (M=I, II, III ... M), wherein Δ T is the difference of two districts neighboring concentric square frame shape thermoelectric cooling zone cold junction temperature.For reaching the requirement of center and marginarium equalizing temperature, the cold junction temperature in square frame shape thermoelectric cooling zone increases progressively to the marginarium from the center with one heart, the adjacent region temperature difference is 0.5 ℃, comes the inhomogeneous of compensate mask plate temperature distribution with this, can reach the uniform purpose of mask plate spatial temperature distribution.
Film platinum resistor thermometer monitor temperature and the Current Control of the present invention by laying in each district, the regulator control system of formation closed loop is regulated and control according to temperature controlled requirement.
Array thermoelectric refrigerating unit of the present invention is positioned at the bottom of electrostatic chuck, the insulating heat-conductive plate and the electrostatic chuck of refrigerator cold junction are close to heat transfer, cold junction temperature is passed to electrostatic chuck by heat exchange pattern, so the card of electrostatic chuck can obtain also to distribute with array refrigerator consistent temperature.Mask plate is by Electrostatic Absorption power, and attached to electrostatic chuck top, electrostatic chuck will pass to mask plate from the cold that the array thermoelectric refrigerating unit absorbs.Because mask plate is understood 100% absorption EUV light in the graphics field, and can absorb 33% EUV light in non-graphics field, therefore the Temperature Distribution of the mask plate that is not cooled should be central area temperature height, the fringe region temperature is low.And with one heart the cold junction temperature in square frame shape thermoelectric cooling zone is distributed as that the central area temperature is low, fringe region temperature height, just can realize the spatial temperature distribution homogeneity that mask plate is good by temperature compensation like this, thereby reduce the thermal deformation of mask plate.
Because the refrigerating capacity of thermoelectric refrigerating unit is relevant with feeding size of current and material character with cryogenic temperature, so the present invention changes the cryogenic temperature and the refrigerating capacity of concentric square frame shape thermoelectric cooling zone supply electrostatic chuck by the size of control input current.
Thermoelectric cooling is to utilize handkerchief in the physical phenomenon and obedient effect principle: when two kinds of different semiconductors are connected and are linked to be the loop with a direct supply, temperature difference can occur at the semiconductor two ends, transmit directly at the volley by electronics (hole) promptly that heat realizes.According to following thermoelectric refrigerating unit unit refrigerating capacity, cold junction temperature theoretical calculation formula:
The refrigerating capacity computing formula:
Thermoelectric refrigerating unit cool and heat ends temperature difference computing formula:
Q in the following formula
eIt is refrigerating capacity; S is the right Seebeck coefficient of thermopair; ρ is a resistivity; K is a thermal conductivity; T
eIt is cold junction temperature; I is a strength of current; R is a material resistance; T
MIt is hot-side temperature; The figure of merit of exosyndrome material thermoelectric property is
From formula (1)～(2) as can be seen, under the fixed prerequisite of thermoelectric cooling modulator material, the thermoelectric refrigerating unit hot junction is exposed in the air or by the fan heat radiation, keeps the stability of hot-side temperature, and then the cold junction temperature of refrigerator is just relevant with the size that feeds electric current with refrigerating capacity.
The invention has the beneficial effects as follows:
1, the thermoelectric cooling mode is not used cold-producing medium, does not have leakage, pollution problem; Do not have mechanical running part, so noiseless, the life-span is long, and is Miniaturized;
2, thermoelectric cooling temperature control precision height can be realized precise temperature control;
3, the present invention other equipment do not have work situation under, can work in advance, equipment is carried out precooling, treat that temperature reaches certain numerical value after, can stablize running at a certain temperature.
4, structure of the present invention is suitable for the vacuum operation environment, can be used for the heat control operation of EUVL mask plate, work stage etc.Also can be used for other precise temperature controls, refrigerating operations such as nanoprocessing, detection.
5, flexible operation of the present invention is easy, under the prerequisite that conditions such as voltage, material, resistance and hot-side temperature are determined, only needs control input current, the i.e. temperature of may command cold junction and refrigerating capacity.
Description of drawings
Further specify the present invention below in conjunction with the drawings and specific embodiments.
Fig. 1 is an extreme ultraviolet photolithographic mask plate vertical view, and among the figure: 1 is mask plate, and 101 is EUV beam flying graph area, and 102 is the EUV light beam, and 103 is the non-graph area of mask plate.
Fig. 2 is extreme ultraviolet photolithographic mask plate side view and heat transfer synoptic diagram, among the figure: 1 is mask plate, 102 is the EUV light beam, 201 is absorption layer, 202 is the Mo/Si multilayer film, 203 is substrate layer, and 204 is the substrate bottom with the transmission of heat by contact of electrostatic chuck, and 205 is the absorption layer surface with the radiant heat transfer of surrounding environment.
Fig. 3 is a thermoelectric refrigerating unit unit schematic diagram in the array thermoelectric refrigerating unit, and among the figure: 3 is the thermoelectric refrigerating unit unit, and 301 is to thermoelectric refrigerating unit unit direct current power source supplying power, 302 is cold junction insulating heat-conductive plate, and 303 is conducting metal, and 304 is N-type semiconductor, 305 is P-type semiconductor, and 306 is heat sink.
Fig. 4 is the embodiment synoptic diagram of array thermoelectric refrigerating unit of the present invention, Fig. 4 a is array thermoelectric refrigerating unit 4 installation sites and schematic side view thereof, Fig. 4 b is array thermoelectric refrigerating unit 4 top plan view, among the figure: 1 is mask plate, 2 is electrostatic chuck, 4 is the array thermoelectric refrigerating unit, and 302 is cold junction insulating heat-conductive plate, and 306 is heat sink.401 is that thermopair is right, 402 are thermometric film platinum resistor thermometer, 403 is I district, concentric square frame shape thermoelectric cooling zone, 404 is II district, concentric square frame shape thermoelectric cooling zone, 405 is III district, concentric square frame shape thermoelectric cooling zone, and 406 are the data line of thermometric with the film platinum resistor thermometer.
Fig. 5 is thermoelectric refrigerating unit temperature control flow figure, and among the figure: 501 is analog to digital converter, and 502 is microprocessor, and 503 is digital to analog converter, and 504 is the rectifying and voltage-stabilizing device.
Fig. 6 is absorption layer surface temperature distribution figure before mask plate 1 thermal deformation is corrected.
Fig. 7 is the mask plate 1 absorption layer temperature profile before and after mask plate 1 thermal deformation is corrected.
Fig. 8 is to thermal deformation in the mask plate 1 absorption layer xy face before and after the mask plate 1 thermal deformation rectification.
Fig. 9 is the mask plate 1 absorption layer z direction thermal deformation before and after mask plate 1 thermal deformation is corrected.
Figure 10 is mask plate 1 a material thermal physical property parameter.
Embodiment
Fig. 3 is thermoelectric refrigerating unit unit 3 schematic diagrams in the array thermoelectric refrigerating unit, Figure 3 shows that thermopair is to being the refrigerator unit of m * n=1 * 4.
As shown in Figure 3, thermopair couples together N-type semiconductor 304 and P-type semiconductor 305 by conducting metal 303 to 401 and constitutes thermoelectric refrigerating unit unit 3, when electric current flows through N-type semiconductor 304, P-type semiconductor 305 and conducting metal 303, cold junction insulating heat-conductive plate 302 can absorb heat and produce refrigeration, heat sink 306 then emit heat, thereby produce the temperature difference at two ends.Under the fixing situation of thermoelectric cooling modulator material and hot-side temperature, the cold junction temperature only character with size that feeds electric current and material is relevant, therefore can change the cryogenic temperature of cold junction by the size that changes the feeding electric current.
Fig. 4 is an array thermoelectric refrigerating unit embodiment synoptic diagram of the present invention.Array thermoelectric refrigerating unit 4 is positioned at the bottom of electrostatic chuck 2 cards, and the contact position, bottom at itself and electrostatic chuck 2 is provided with cold junction insulating heat-conductive plate 302.Cold junction insulating heat-conductive plate 302 touches with the planar disk bottom connection of electrostatic chuck 2.Mask plate 1 is by Electrostatic Absorption power, and attached to electrostatic chuck 2 card tops, the planar disk top of electrostatic chuck 2 contacts by Electrostatic Absorption power with mask plate substrate of bottom portion 203.Cold junction insulating heat-conductive plate 302 adopts the aluminium oxide (Al of good heat conductivity in the specific embodiment of the invention
2O
3) pottery, also can adopt the good other materials of insulating heat-conductive.Material selection antimony bismuth (Bi-Sb-Te-Se) the system solid solution of thermoelectric refrigerating unit 4 of the present invention, its machining property is good, in little refrigerating capacity, 15 ℃～30 ℃ cryogenic temperature scopes is the thermoelectric material of performance the best, and also available other have the material substitution of thermoelectric effect.The card material of electrostatic chuck 2 is AlN, and it has good thermal conductivity, and thermal conductivity is 110W/mK, thereby the absorption of the cold that can soon array thermoelectric refrigerating unit 4 cold junctions be sent, obtains the Temperature Distribution the same with cold junction insulating heat-conductive plate 302.Because electrostatic chuck 2 and 1 of mask plate have temperature difference, so chuck 2 meetings and mask plate 1 generation heat transmission, chuck 2 will pass to mask plate 1 from the cold that thermoelectric refrigerating unit 4 absorbs.
Temperature field when array thermoelectric refrigerating unit 4 of the present invention is not cooled according to mask plate 1 determines that thermopair in the area of the quantity K of the quantity M in concentric square frame shape thermoelectric cooling zone, thermoelectric refrigerating unit unit, every district 3 and cold junction insulating heat-conductive plate 302 and each the refrigerator unit 3 is to quantity m * n of 400.Because graph area 100% absorbs EUV light, therefore selecting the area of I district insulating heat-conductive plate is 95～98% of graph area area; And being the area in 40～50%, the III district of 5～2% and non-graph area area of graph area area, the area in II district will be covered with remaining non-graph area.In order further to dwindle the cold-end temperature difference of different refrigerators unit, also II, III district can be continued segmentation.
Specific embodiment of the invention center outwards is divided into the quantity M=3 with centrosymmetric M concentric square frame shape thermoelectric cooling zone.I district 403 areas are about 98mm * 98mm, and it is made of K=1 piece thermoelectric refrigerating unit unit, and the right quantity of thermopair is m * n=24 * 24; II district 404 areas are 120mm * 120mm (removing 403 zones that cover), and it is made of K=4 piece thermoelectric refrigerating unit unit, and the right quantity of thermopair is respectively two m * n=5 * 34 and m * n=25 * 5; The III district is that 405 areas are 160mm * 160mm (removing 403,404 zones that cover), and it also is to be made of K=4 piece thermoelectric refrigerating unit unit, and the right quantity of thermopair is respectively two m * n=10 * 50 and m * n=30 * 8.
The thermopair of same thermoelectric refrigerating unit unit 3 is to 400 series-feds, and electric current is identical, and cold junction temperature is identical.Film platinum resistor thermometer 402 is all laid in each district, monitoring the temperature in this district, and regulates and control this district's thermopair to 400 temperature by the film platinum resistor thermometer.
For reaching the requirement of center and marginarium equalizing temperature, the cold junction temperature in square frame shape thermoelectric cooling zone increases progressively to the marginarium from the center with one heart, the adjacent region temperature difference is 0.5 ℃, by film platinum resistor thermometer monitor temperature and Current Control, constitute the regulator control system of closed loop, regulate and control according to temperature controlled requirement.
Fig. 5 is array thermoelectric refrigerating unit temperature control flow figure.Film platinum resistor thermometer 402 is connected with extraneous control circuit, film platinum resistor thermometer 402 sends A/D (modulus) converter 501 from the Temperature numerical that thermoelectric refrigerating unit 4 and electrostatic chuck 2 record to through data line 406, A/D (modulus) converter 501 is delivered to microprocessor 502 after analog signal conversion is become digital signal, microprocessor 502 is by analysis after the computing, send result to D/A (digital-to-analogue) converter 503 again, D/A (digital-to-analogue) converter 503 is regulated the working current of thermoelectric refrigerating unit 4 by control rectifying and voltage-stabilizing device 504 again, thereby change the temperature of cold junction, reach thermoregulator purpose.
Boundary condition of the present invention and physical parameter:
The heat transmission of looking between array thermoelectric refrigerating unit and electrostatic chuck has reached stable state, and electrostatic chuck and thermoelectric refrigerating unit cold junction temperature have all reached thermal equilibrium.Use finite element analysis software ANSYS to set up model, the initial temperature of supposing mask plate is 20 ℃, and 2 contacts of substrate lower surface electrostatic chuck evenly contact heat-conduction coefficient 150W/m
2K is applied to mask plate 1 substrate lower surface with chilled electrostatic chuck 2 surperficial uneven temperature fields; Because there is heat radiation in mask plate 1 surface, supposes that environment is a black matrix, temperature remains on 20 ℃, by with the linearization of heat radiation formula, makes heat radiation be converted into the thermal convection condition, and convective heat-transfer coefficient is 1.08W/m
2K; In the graphics field, apply the EUV incident light, for 7mJ/cm
2The resist light sensitivity, its incident optical power is 9.24W.
When deformation analysis, owing to use electrostatic force to fix between mask plate 1 and the electrostatic chuck 2, therefore suppose that mask plate 1 bottom surface contacts fully with chuck 2 upper surfaces, does not promptly have the displacement of z direction, the then influence of negligible friction in the xy plane can move freely because chuck surface is smooth.Suppose that in addition mask plate 1 central spot xy in-plane displancement is zero, the displacement of other each position reflects its displacement with respect to central point like this.
Experimental result of the present invention is shown in Fig. 6～9
The experiment 2, use array thermoelectric refrigerating unit 4 of the present invention to cool off electrostatic chuck 2 after, mask plate 1 absorption layer Temperature Distribution, the deformation of xy face and the deformation of z direction all change.In the experiment, the cold junction temperature of first district's thermoelectric refrigerating unit 4 is set in 19 ℃, and the cold junction temperature in second district is set in 19.5 ℃, the cold junction temperature of three-field system cooler 4 is 20 ℃.The distortion of mask plate 1 heat is after overcorrection, and the thermograde in the plate and xy face, the axial deformation of z all have and reduces.Fig. 7,8,9 is respectively the numerical value at mask plate 1 thermograde and xy face, the axial deformation of z diverse location place in plate.Because mask plate 1 model and boundary condition setting all are symmetrical, so coordinate is to the edge value by center position.From Fig. 7～9 as can be seen, (EUV light area) thermograde is very little at 0～55mm place, in 19.4～19.6 ℃ of scopes; Thermal deformation in the xy face can be controlled in the 0.8nm; Thermal deformation on the z direction can be controlled in the 0.02nm.From top analysis result as can be seen, the present invention is by cooling off electrostatic chuck 2, better controlled the thermal deformation of mask plate 1.
Claims (2)
1, a kind of cooler of static chuck of extreme ultraviolet photolithographic mask platform comprises electrostatic chuck [2], mask plate [1] and array architecture thermoelectric refrigerating unit [4]; Array architecture thermoelectric refrigerating unit [4] is positioned at the bottom of electrostatic chuck [2] card, and the insulating heat-conductive plate [302] of refrigerator cold junction touches with electrostatic chuck [2] planar disk bottom connection; Mask plate [1] is by Electrostatic Absorption power, attached to electrostatic chuck [2] card top, it is characterized in that, the concentric square frame shape thermoelectric cooling zone that array architecture thermoelectric refrigerating unit [4] is outwards divided from array architecture thermoelectric refrigerating unit center by the M piece constitutes, each concentric square frame shape thermoelectric cooling zone is divided into k piece thermoelectric refrigerating unit unit [3], and each thermoelectric refrigerating unit unit [3] is capable by m, the thermopair of n row constitutes [400] series connection; Thermopair is formed by connecting by conductive copper plate by a N-type semiconductor and a P-type semiconductor to [400], and the thermopair in the same thermoelectric refrigerating unit unit [3] is to series-fed, and electric current is identical, and cold junction temperature is identical; The number in square frame shape thermoelectric cooling zone is determined according to the Temperature Distribution of mask plate before uncolled with one heart; The area in square frame shape thermoelectric cooling zone is determined by the area of extreme ultraviolet light beam scanning and the area of graph area with one heart; The cold junction temperature in the concentric square frame shape thermoelectric cooling zone of array architecture thermoelectric refrigerating unit [4] distributes and is set to that the central area temperature is low, fringe region temperature height, and cold junction temperature increases progressively to the marginarium from the center, and the temperature difference of adjacent area cold junction is 0.5 ℃; The cold junction temperature of the thermoelectric refrigerating unit unit [3] in the same concentric square frame shape thermoelectric cooling zone is identical.
2, according to the described cooler of static chuck of extreme ultraviolet photolithographic mask platform of claim 1, it is characterized in that: film platinum resistor thermometer [402] is all laid in the concentric square frame shape thermoelectric cooling of each of array architecture thermoelectric refrigerating unit [4] zone, film platinum resistor thermometer [402] sends A/D analog to digital converter [501] to from the Temperature numerical that array architecture thermoelectric refrigerating unit [4] and electrostatic chuck [2] record, deliver to microprocessor [502] after analog signal conversion become digital signal, microprocessor [502] is by analysis after the computing, send result to D/A digital to analog converter [503] again, digital to analog converter [503] is regulated the working current of array architecture thermoelectric refrigerating unit [4] again by control rectifying and voltage-stabilizing device [504], to change the temperature of cold junction, reach thermoregulator purpose.
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| CNB2005100869376A CN100570488C (en) | 2005-11-21 | 2005-11-21 | Cooler of static chuck of extreme ultraviolet photolithographic mask platform |
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| CNB2005100869376A CN100570488C (en) | 2005-11-21 | 2005-11-21 | Cooler of static chuck of extreme ultraviolet photolithographic mask platform |
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| CN1035144C (en) * | 1992-09-25 | 1997-06-11 | 李中江 | Thermoelectric refrigerating semiconductor component and technology |
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| US20040009410A1 (en) * | 2002-07-15 | 2004-01-15 | International Business Machines Corporation | Integrated cooling substrate for extreme ultraviolet reticle |
| US6806007B1 (en) * | 2003-05-02 | 2004-10-19 | Advanced Micro Devices, Inc. | EUV mask which facilitates electro-static chucking |
-
2005
- 2005-11-21 CN CNB2005100869376A patent/CN100570488C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1035144C (en) * | 1992-09-25 | 1997-06-11 | 李中江 | Thermoelectric refrigerating semiconductor component and technology |
| US5522225A (en) * | 1994-12-19 | 1996-06-04 | Xerox Corporation | Thermoelectric cooler and temperature sensor subassembly with improved temperature control |
| US6098408A (en) * | 1998-11-11 | 2000-08-08 | Advanced Micro Devices | System for controlling reflection reticle temperature in microlithography |
| US20040009410A1 (en) * | 2002-07-15 | 2004-01-15 | International Business Machines Corporation | Integrated cooling substrate for extreme ultraviolet reticle |
| US6806007B1 (en) * | 2003-05-02 | 2004-10-19 | Advanced Micro Devices, Inc. | EUV mask which facilitates electro-static chucking |
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| CN1971422A (en) | 2007-05-30 |
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