CN105159035B - A kind of exposure slide holder for improving wafer deformation - Google Patents
A kind of exposure slide holder for improving wafer deformation Download PDFInfo
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- CN105159035B CN105159035B CN201510608938.6A CN201510608938A CN105159035B CN 105159035 B CN105159035 B CN 105159035B CN 201510608938 A CN201510608938 A CN 201510608938A CN 105159035 B CN105159035 B CN 105159035B
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- slide holder
- exposure
- silicon chip
- wafer deformation
- coating
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention relates to semiconductor applications more particularly to a kind of exposure slide holders for improving wafer deformation.The present invention is applied to during being exposed by silicon chip of the exposure machine above slide holder, silicon chip is positioned over the surface of slide holder, suction vacuum hole is provided on slide holder, the surface of slide holder scribbles coating, the friction coefficient μ of coating is 0.4 0.8, and the thermal conductivity factor λ of coating is 20 400W/m.k.
Description
Technical field
The present invention relates to semiconductor applications more particularly to a kind of exposure slide holders for improving wafer deformation.
Background technology
It is generally required to be exposed technique in the production and processing technology of semiconductor at present, it is often brilliant during exposure
Circle needs to be heated, and due to being subject to the heat of heat source, the thermal expansion of wafer silicon chip will highlight.
In the prior art, the surface of semiconductor exposure machine slide holder is typically coated with face coat, the face coat generally by
Carbon fibre composite is made, and coefficient of friction is smaller, generally 0.05-0.2 or so, and thermal conductivity factor is relatively low, is generally less than
20W/m.k, Fig. 1 are the structure diagram of slide holder in the prior art of the invention, as shown in Figure 1, silicon chip 2 is passed through movement first
Arm is placed on the surface of slide holder 1, and vacuum hole 3 instantaneously holds silicon chip, in exposure process silicon chip 2 because exposing expanded by heating, but
Because being bonded closely without expansion at the vacuum hole 3 of the lower section of silicon chip 2, periphery silicon chip 2, which outwards expands, there is Horizontal Deformation, causes pair
Quasi- accuracy error can not meet high-precision manufacturing technique requirent needs.
The content of the invention
The defects of for present in the design of slide holder of the prior art, the present invention relates to a kind of coefficient of friction it is high,
A kind of high exposure slide holder that can improve wafer deformation of thermal conductivity factor.
The present invention adopts the following technical scheme that：
A kind of exposure slide holder for improving wafer deformation, silicon chip are positioned over the surface of slide holder, are set on the slide holder
Suction vacuum hole is equipped with, the surface of the slide holder scribbles coating, and the friction coefficient μ of the coating is 0.4-0.8, the coating
Thermal conductivity factor λ is 20-400W/m.k.
Preferably, the slide holder is applied in the technique level less than 20 nanometers.
Preferably, the exposure slide holder according to claim 1 for improving wafer deformation, which is characterized in that the load
Piece platform be applied to 55 nanometers, 40 nanometers, in 28 nanometers of semiconductor technology.
Preferably, the coating includes metal material and composite material.
Preferably, the metal includes AL or Cu or Ag or Au or W or Pt.
Preferably, the composite material includes TiN or Co or SiOxNx.
Preferably, the exposure machine used is dark purple for KrF deep ultraviolet light or the non-immersion deep ultraviolet light of ArF or ArF immersions
Outer smooth exposure machine.
The beneficial effects of the invention are as follows：
The present invention increases the coefficient of friction of silicon chip and slide holder, makes by applying litho machine slide holder novel surface coating
Silicon chip is fitted closely with slide holder, is conducted heat by high heat conductive material, reduces thermal expansion, is eliminated silicon wafer exposure and is generated thermal expansion
The horizontal direction offset brought, can effectively improve silicon chip deformation, improves alignment precision, ensure that silicon during photolithographic exposure
The alignment precision homogeneity of silicon chip entirety greatly improved in the alignment accuracy of piece and light source, can meet to required precision compared with
High technique.
Description of the drawings
Fig. 1 is the structure diagram of slide holder of the prior art；
Fig. 2 is the structure diagram for the exposure slide holder embodiment that the present invention improves wafer deformation；
Fig. 3 is the structure diagram of the suction vacuum hole for the exposure slide holder embodiment that the present invention improves wafer deformation；
Fig. 4 is the enlarged diagram for the exposure slide holder embodiment that the present invention improves wafer deformation.
Specific embodiment
The present invention is specifically described below in conjunction with the accompanying drawings, it is necessary to which explanation is, following technical characteristic is this hair
Bright optimal technical scheme can be mutually combined, not form limitation of the invention.
Embodiment one
Fig. 2 is the structure diagram for the exposure slide holder embodiment that the present invention improves wafer deformation, as shown in Fig. 2, a kind of
Silicon chip 2 is placed on to the surface of slide holder 1 by moving arm, slide holder 1, which is equipped with, inhales vacuum hole 3, inhales vacuum on slide holder 1
Hole 3 can hold silicon chip 2 with moment, be evenly distributed in as shown in figure 3, inhaling vacuum hole 3 on slide holder 1 so that silicon chip 2 can be compared with
Closely to adsorb on slide holder 1, as shown in figure 4, scribbling coating 5 on the surface of slide holder 1, the friction coefficient μ of coating 5 is
0.4-0.8, thermal conductivity factor λ are 20-400W/m.k, efficiently solve the problems, such as 2 expanded by heating of silicon chip, eliminate 2 deformation of silicon chip, from
And the basic technical barrier for improving 2 thermal expansion of silicon chip.
New coating 5 in the present invention not only causes silicon chip 2 to be bonded with slide holder 1 closely, inhales 3 peripheral direction of vacuum hole
Silicon chip 2 it is also ensured that fit closely, will not occurred level slide, so as to avoid no thermal expansion shift.It ensure that photoetching exposes
The alignment accuracy of silicon chip 2 and light source 4 in photoreduction process greatly improved the whole alignment precision homogeneity of silicon chip 2, can meet
The technique higher to required precision.
By the application of the great friction coefficient novel surface coating 5 of photolithographic exposure machine slide holder 1, can effectively improve because
The silicon chip 2 that thermal expansion is brought between silicon chip 2 and slide holder 1 deforms, especially for process layer of the alignment precision requirement less than 20 nanometers
It is secondary to have very great help, such as 55 nanometers, 40 nanometers, 28 nanometers of advanced semiconductor processes, the alignment alignment essence of raising 2 plane of silicon chip
Degree preferably controls 2 online alignment precision of silicon chip, improves the permissible range of technique productions fluctuation, the final device for promoting product
Performance and yields.
The present embodiment is suitable for all novel surface coatings 5 on 2 slide holder 1 of silicon chip contact surface, uses great friction coefficient
(μ=0.4~0.8), 5 material of high thermal conductivity coefficient (λ=20~400W/m.K) novel surface coating, this material combination metal (AL,
Cu, Ag, Au, W, Pt etc.) and composite material (TiN, Co, SiOxNx) etc. form composite material, there is high thermal conductivity coefficient and friction
Coefficient can efficiently solve the problems, such as 2 expanded by heating of silicon chip, eliminate 2 deformation of silicon chip, so as to which basic improves 2 heat of silicon chip
The technical barrier of expansion.
Exposure machine in the present embodiment can be that KrF deep ultraviolet light or the non-immersion deep ultraviolet light of ArF or ArF immersions are deep
Ultraviolet photoetching machine.The present embodiment can be used for 2 slide glass of silicon chip of all lithographic exposure apparatus of silicon chip 2200mm, 300mm, 450mm
Platform 1.For example, the present embodiment can apply the slide holder 1 in the non-immersion deep ultraviolet light litho machines of ArF, silicon is improved in exposure
Alignment precision in 2 plane of piece is promoted to 8 rans from existing about 15 nanometers of alignment precision of alignment, preferably silicon chip 2 is controlled to exist
Line alignment precision improves the permissible range of technique productions fluctuation, the final device final performance and yields for promoting product.
In conclusion the present invention increases rubbing for silicon chip and slide holder by applying litho machine slide holder novel surface coating
Coefficient is wiped, silicon chip is made to be fitted closely with slide holder, is conducted heat by high heat conductive material, reduces thermal expansion, eliminates silicon wafer exposure
The horizontal direction offset that thermal expansion is brought is generated, silicon chip deformation is can effectively improve, improves alignment precision, ensure that photoetching exposes
The alignment precision homogeneity of silicon chip entirety greatly improved in the alignment accuracy of silicon chip and light source in photoreduction process, can meet pair
The higher technique of required precision.
By explanation and attached drawing, the exemplary embodiments of the specific structure of specific embodiment are given, it is smart based on the present invention
God can also make other conversions.Although foregoing invention proposes existing preferred embodiment, however, these contents are not intended as
Limitation.
For a person skilled in the art, after reading above description, various changes and modifications undoubtedly will be evident.
Therefore, appended claims should regard whole variations and modifications of the true intention and scope that cover the present invention as.It is weighing
The scope and content of any and all equivalence, are all considered as still belonging to the intent and scope of the invention in the range of sharp claim.
Claims (7)
1. a kind of exposure slide holder for improving wafer deformation, silicon chip are positioned over the surface of slide holder, are set on the slide holder
There is suction vacuum hole, which is characterized in that the surface of the slide holder scribbles coating, and the friction coefficient μ of the coating is 0.4-0.8,
The thermal conductivity factor λ of the coating is 20-400W/m.k.
2. the exposure slide holder according to claim 1 for improving wafer deformation, which is characterized in that the slide holder is applied to
In technique level less than 20 nanometers.
3. the exposure slide holder according to claim 1 for improving wafer deformation, which is characterized in that the slide holder is applied to
55 nanometers, 40 nanometers, in 28 nanometers of semiconductor technology.
4. the exposure slide holder according to claim 1 for improving wafer deformation, which is characterized in that the coating includes metal
Material and composite material.
5. it is according to claim 4 improve wafer deformation exposure slide holder, which is characterized in that the metal include AL or
Cu or Ag or Au or W or Pt.
6. the exposure slide holder according to claim 4 for improving wafer deformation, which is characterized in that the composite material includes
TiN or Co or SiOxNx.
7. it is according to claim 1 improve wafer deformation exposure slide holder, which is characterized in that the exposure machine used for
KrF deep ultraviolet light or the non-immersion deep ultraviolet light of ArF or ArF immersion deep UV exposure machines.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510608938.6A CN105159035B (en) | 2015-09-22 | 2015-09-22 | A kind of exposure slide holder for improving wafer deformation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510608938.6A CN105159035B (en) | 2015-09-22 | 2015-09-22 | A kind of exposure slide holder for improving wafer deformation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105159035A CN105159035A (en) | 2015-12-16 |
| CN105159035B true CN105159035B (en) | 2018-05-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510608938.6A Active CN105159035B (en) | 2015-09-22 | 2015-09-22 | A kind of exposure slide holder for improving wafer deformation |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5586159A (en) * | 1994-03-28 | 1996-12-17 | Canon Kabushiki Kaisha | Substrate holding system and exposure apparatus having the same |
| CN1971422A (en) * | 2005-11-21 | 2007-05-30 | 中国科学院电工研究所 | Cooler of static chuck of extreme ultraviolet photolithographic mask platform |
| CN102411266A (en) * | 2011-11-30 | 2012-04-11 | 上海华力微电子有限公司 | Exposure method adopting lithography machine |
| CN102859437A (en) * | 2010-04-28 | 2013-01-02 | 富士胶片株式会社 | Photosensitive composition, photosensitive film, photosensitive laminate, method for forming permanent pattern, and printed board |
| TW201428880A (en) * | 2012-11-30 | 2014-07-16 | 尼康股份有限公司 | Carrier system, exposure apparatus, carrying method, exposure method and device manufacturing method, and suction apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4052891B2 (en) * | 2002-07-19 | 2008-02-27 | 三菱化学ポリエステルフィルム株式会社 | Dry photoresist film |
-
2015
- 2015-09-22 CN CN201510608938.6A patent/CN105159035B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5586159A (en) * | 1994-03-28 | 1996-12-17 | Canon Kabushiki Kaisha | Substrate holding system and exposure apparatus having the same |
| CN1971422A (en) * | 2005-11-21 | 2007-05-30 | 中国科学院电工研究所 | Cooler of static chuck of extreme ultraviolet photolithographic mask platform |
| CN102859437A (en) * | 2010-04-28 | 2013-01-02 | 富士胶片株式会社 | Photosensitive composition, photosensitive film, photosensitive laminate, method for forming permanent pattern, and printed board |
| CN102411266A (en) * | 2011-11-30 | 2012-04-11 | 上海华力微电子有限公司 | Exposure method adopting lithography machine |
| TW201428880A (en) * | 2012-11-30 | 2014-07-16 | 尼康股份有限公司 | Carrier system, exposure apparatus, carrying method, exposure method and device manufacturing method, and suction apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105159035A (en) | 2015-12-16 |
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