KR101904062B1 - Workpiece thickness measurement device, measure method, and workpiece polishing device - Google Patents

Workpiece thickness measurement device, measure method, and workpiece polishing device Download PDF

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KR101904062B1
KR101904062B1 KR1020167017957A KR20167017957A KR101904062B1 KR 101904062 B1 KR101904062 B1 KR 101904062B1 KR 1020167017957 A KR1020167017957 A KR 1020167017957A KR 20167017957 A KR20167017957 A KR 20167017957A KR 101904062 B1 KR101904062 B1 KR 101904062B1
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measuring
thickness
liquid
polishing
work
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KR1020167017957A
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Korean (ko)
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KR20160095071A (en
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후미야 후쿠하라
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가부시키가이샤 사무코
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

Abstract

The apparatus for measuring the thickness of a work according to the present invention is a device for measuring the thickness of a work which is disposed so as to oppose a liquid immersion unit for immersing at least a part of the work after polishing into a liquid, And a measuring device. A method for measuring the thickness of a work according to the present invention is a method for measuring a thickness of a workpiece comprising the steps of immersing at least a part of the workpiece after polishing in a liquid and a step of arranging the workpiece so that at least a part of the workpiece is immersed in the liquid, And measuring the thickness of the workpiece with two or more measuring devices capable of measuring the distance to the surface of the portion of the workpiece immersed in the liquid. A polishing apparatus for a workpiece according to the present invention includes a receiving section for receiving information on the thickness of the workpiece measured by the measuring apparatus or measuring method and a control section for controlling the changing of the polishing recipe or the parameters And a correction unit for correcting the correction value.

Description

TECHNICAL FIELD [0001] The present invention relates to a work thickness measuring apparatus, a measuring method, and a polishing apparatus for a work,

TECHNICAL FIELD The present invention relates to an apparatus for measuring the thickness of a work, a measuring method, and a polishing apparatus for a work, and particularly relates to a work thickness measuring apparatus and a measuring method capable of measuring the thickness of the work in a wet state, And a polishing apparatus for a workpiece using the measurement result by the measuring method.

Conventionally, in a manufacturing process of a silicon wafer, which is a typical example of a work to be provided for polishing, single-side polishing (finish polishing) for finishing the wafer to a predetermined thickness is performed, and a wafer having a diameter of 300 mm or more, A two-side polishing process for simultaneously polishing the front and back surfaces of a wafer is generally employed.

In this polishing, since the change in the polishing allowance amount of the polishing can not be accurately grasped because the abrasive circumstance such as the replacement time of the polishing subsidiary material or the timing of stopping the apparatus is deviated, the polishing time is appropriately set And there is a problem in that the density of the flatness or the LPD (Light Point Defects) varies.

On the other hand, there has been proposed a method of measuring the thickness of a wafer after polishing, grasping a change in the polishing allowance amount of the polishing, feeding back the change to the polishing apparatus, and changing the polishing recipe or correcting the parameters of the polishing conditions (See, for example, Patent Document 1).

Japanese Patent Application Laid-Open No. 2003-68689

However, in the polishing step, since the polishing is performed by using a polishing slurry or grinding water, the wafer is in a wet state after polishing. Therefore, in the technique of Patent Document 1, in order to accurately measure the thickness of the wafer, It was necessary to wait to be dried.

Therefore, since time lag of several hours occurs until the thickness of the wafer can be accurately measured, that is, the drying process is completed, the wafer processed therebetween can not accurately control the amount of polishing, There has been a problem that the throughput of the polishing process is lowered when the next wafer is not polished until the drying process is completed so as to accurately control the polishing rate. This problem has also been a problem that can occur not only in silicon wafers but also in general workpieces subjected to polishing by the same technique.

An object of the present invention is to solve the above problems and provide a work thickness measuring apparatus and a work thickness measuring method capable of measuring the thickness of a work in a wet state. It is another object of the present invention to provide a polishing apparatus for a workpiece capable of appropriately controlling the amount of polishing while ensuring throughput.

The structure of the present invention is as follows.

The apparatus for measuring the thickness of a work according to the present invention comprises a liquid immersion machine for immersing at least a part of a work after polishing into a liquid and two And a measuring device having the above-described structure.

In the apparatus for measuring a thickness of a work according to the present invention, it is preferable that a support member for fixing the measuring instrument is additionally provided.

In the apparatus for measuring the thickness of a work according to the present invention, it is preferable that the measuring instrument has a cap at its tip.

In the apparatus for measuring the thickness of a work according to the present invention, it is preferable that the liquid immersing apparatus is a tank capable of accommodating the work.

Further, in the apparatus for measuring the thickness of a work according to the present invention, it is preferable that the above-mentioned bath is made of quartz or plate glass.

In the apparatus for measuring the thickness of a work according to the present invention, it is preferable that at least a part of the measuring instrument is inserted into the vessel and a gap is provided between the vessel and the measuring instrument.

Further, in the apparatus for measuring the thickness of a work according to the present invention, it is preferable that the liquid submerger is a liquid supply pipe capable of supplying the liquid so that at least a part of the work is always immersed in the liquid.

In the work thickness measuring apparatus of the present invention, it is preferable that the liquid supply pipe includes a liquid supply amount adjusting section capable of adjusting an amount of supplying the liquid.

The apparatus for measuring thickness of a work according to the present invention may further comprise a liquid introduction pipe arranged so as to be opposed to each other with the work interposed therebetween in proximity to a measurement point of the thickness of the work, It is preferable to be inserted into the liquid introduction pipe.

Here, in the apparatus for measuring the thickness of a work according to the present invention, it is preferable that the liquid is water.

Further, in the work thickness measuring apparatus of the present invention, it is preferable that the measuring apparatus is an optical spectroscopic interference measuring apparatus.

Further, in the apparatus for measuring the thickness of a work according to the present invention, it is preferable that the deformation amount of the above-mentioned bath is 50 nm or less at the time of measuring the thickness of the work.

Here, the " deformation amount of the tank " refers to the amount of deformation at a point on the line opposite to the two measuring instruments, and refers to the maximum displacement between measurement times.

In the apparatus for measuring the thickness of a work according to the present invention, it is preferable that a reinforcing plate is disposed in the above-mentioned trough.

In the apparatus for measuring the thickness of a work according to the present invention, the tank may further include a liquid discharge portion, a liquid discharge amount measuring device for measuring a discharge amount of liquid from the liquid discharge portion, and a control portion for adjusting the liquid discharge amount based on the measured liquid discharge amount .

Here, the method for measuring the thickness of a work according to the present invention includes a step of immersing at least a part of a work after polishing in a liquid, a step of sandwiching the work in a state in which at least a part of the work is immersed in the liquid And measuring the thickness of the workpiece with two or more measuring devices capable of measuring the distance to the surface of the portion of the workpiece immersed in the liquid.

A polishing apparatus for a workpiece according to an embodiment of the present invention includes a receiving section for receiving information on the thickness of the workpiece measured by the thickness measuring apparatus of the workpiece; And an arithmetic section for performing the switching of the polishing recipe or the correction of the parameters of the polishing conditions.

According to another aspect of the present invention, there is provided a polishing apparatus for a workpiece, comprising: a receiving section for receiving information on the thickness of the workpiece measured by the method for measuring the thickness of the workpiece; And an arithmetic section for performing the switching of the polishing recipe or the correction of the parameters of the polishing conditions.

According to the present invention, it is possible to provide a work thickness measuring apparatus and a work thickness measuring method which can measure the thickness of a work in a wet state. Further, according to the present invention, it is possible to provide a polishing apparatus for a workpiece capable of appropriately controlling the amount of polishing while ensuring throughput.

Fig. 1 (a) is a schematic perspective view of a work thickness measuring apparatus according to a first embodiment of the present invention, and Fig. 1 (b) is a cross sectional view showing a main part of a work thickness measuring apparatus according to the first embodiment of the present invention Fig.
Fig. 2 (a) is a schematic perspective view of a work thickness measuring apparatus according to a second embodiment of the present invention, and Fig. 2 (b) is a view showing a main part of a work thickness measuring apparatus according to a second embodiment of the present invention FIG.
Fig. 3 (a) is a schematic sectional view of a work thickness measuring apparatus according to a third embodiment of the present invention, and Fig. 3 (b) is a view showing a main part of a work thickness measuring apparatus according to a third embodiment of the present invention Sectional view.
Fig. 4A is a schematic sectional view of a work thickness measuring apparatus according to a fourth embodiment of the present invention, and Fig. 4B is a cross sectional view showing a main part of a work thickness measuring apparatus according to a fourth embodiment of the present invention Sectional view.

(Mode for carrying out the invention)

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(Work thickness measuring device)

≪ First Embodiment >

Fig. 1 (a) is a schematic perspective view of a work thickness measuring apparatus according to a first embodiment of the present invention, and Fig. 1 (b) is a schematic view of a work thickness measuring apparatus according to the first embodiment of the present invention Fig. As shown in Fig. 1 (a), this work thickness measuring apparatus 1 has a water tank 2 filled with water (pure water). The water tank 2 is a liquid immersion machine capable of accommodating a workpiece W (a silicon wafer in the present embodiment) after polishing and immersing the whole or a part of the wafer W in water.

1 (a), the thickness measuring apparatus 1 of this work includes two or more (for example, two or more (for example, two or more) 2 in the illustrated example). One side of the measuring instrument 3 can measure the distance from the measuring instrument 3 to the front side surface of the wafer W while the other side can measure the distance from the measuring instrument 3 to the rear side of the wafer W. [ The distance to the surface can be measured.

1 (a), the work thickness measuring apparatus 1 further includes a support member 4 for fixing the measuring instrument 3. As shown in Fig. In the illustrated example, the support member 4 is composed of four rigid plate-like members connecting between the four pillars and the pillars arranged so as to surround the water tub 2, and the two plate- (3) is fixed, the distance between the facing measuring devices (3) is kept constant.

The measuring instrument 3 measures the distance to the front side surface of the wafer W and the distance to the rear side surface of the wafer W at a predetermined position of the wafer W, The thickness of the wafer W at the predetermined position can be obtained by an operation unit (not shown).

Here, as shown in Fig. 1 (b), water (pure water) 5 is filled in the water tank 2, so that the entire surface is immersed in the water 5, And a wafer W is disposed. The wafer W is transferred into the water by using a transfer section (not shown) in a state of being wetted with a polishing slurry or a grinding liquid after polishing.

Hereinafter, the operation and effect of the first embodiment will be described.

According to the work thickness measuring apparatus 1 of the present embodiment, first, the thickness of the wafer W is measured in a state in which the wafer W is transferred into the water in a wet state and the wafer W is immersed in water . Therefore, compared with the case where the thickness of the wafer W is measured after the wafer W is dried, the throughput of the polishing process can be secured. Further, the change in the machining allowance amount of polishing is grasped by comparison with the thickness of the wafer W before polishing, and it is fed back to the polishing apparatus to change the polishing recipe and correct the parameters of the polishing conditions, It is possible to appropriately control the amount of polishing by the polishing pad. The amount of machining allowance for polishing may be grasped by, for example, one wafer W, and for example, a plurality of wafers W may be statistically observed and grasped. Therefore, by using the result of the measurement according to the present embodiment, the flatness (particularly the flatness of the outer peripheral portion) of the wafer W after polishing and the density of the LPD can be improved. In addition, by managing the amount of machining allowance for polishing, the amount of disposable polishing slurry can be appropriately used, and the material cost can be reduced.

It is also possible to measure the thickness of the wafer W in all the planes in the diameter range in which the wafer W exists by moving the wafer W in the radial direction of the wafer W by a transfer unit . In this case, the water tank 2 preferably has a large volume including a moving range of the wafer W. On the other hand, the thickness may be measured in the radial range of the wafer W. Alternatively, the measuring device 3 may be moved to measure the thickness of the wafer W at an arbitrary position. In this case, the measuring instrument 3 is moved while keeping the distance between the measuring instruments 3 opposed to each other constant.

By providing a mechanism for rotating the wafer W on the transfer section, it is possible to measure the thickness at an arbitrary position of the wafer W, measure the thickness in the radial range or the diameter range in an arbitrary direction, and measure the thickness of the wafer W in the circumferential direction The in-plane thickness measurement can be performed.

In the present embodiment, the thickness of the wafer W is calculated from the distance to the surface of the wafer W by using two measuring devices 3 facing each other. For example, in the method of irradiating a laser or the like from one side of the wafer W and measuring the thickness of the wafer W by interference of the reflected light of the front and back surfaces, in the case where the impurity concentration in the silicon substrate is high, The thickness of the wafer W can be measured irrespective of the impurity concentration of the wafer W in this embodiment.

Here, in the present invention, as in this embodiment, the liquid is preferably water, and particularly preferably pure water. This is because it does not chemically react with the wafer W or the measuring device 3 while transmitting light.

It is also preferable that the measuring instrument 3 is an optical spectroscopic interference type measuring instrument. This is because the distance from the measuring device 3 to the surface of the wafer W can be measured even with a liquid such as water interposed therebetween.

Here, in the example shown in Figs. 1A and 1B, since the measuring instrument 3 is disposed outside the water tub 2, the water tub 2 is made of a material that transmits light .

1 (a) and 1 (b), the groove 2a is provided in the water tank 2, and the distance between the wafer W and the measuring instrument 3 approaches, Can be used with high precision.

1 (a) and 1 (b), when the air layer 7 intervenes between the water part and the measuring device 3, the water pressure It is conceivable that the water tank 2 is deformed and the ratio of the distance between the air layer 7 and the water portion changes so that a slight deviation occurs in the optical apparent distance. The inventor of the present invention newly found a case where the thickness of the wafer W can be measured with higher precision by suppressing this.

Therefore, in the embodiment shown in Figs. 1 (a) and 1 (b), it is preferable that the water tank 2 is made of quartz or plate glass. This is because quartz or sheet glass can be deformed to a small degree because the material is highly rigid. This is because the above problem caused by the presence of the air layer 7 can be avoided.

In order to increase the rigidity of the water tank 2, it is preferable to increase the thickness of the water tank 2. More specifically, it is preferably 8 mm or more, more preferably 10 mm or more, and more preferably 12 mm or more Is particularly preferable.

Further, in the apparatus for measuring the thickness of a work according to the present invention, it is preferable that the deformation amount of the jaw is 50 nm or less at the time of measuring the thickness of the work. This is because the thickness of the wafer W can be measured with higher precision. The amount of deformation of the bath is not particularly limited, but can be measured using SI-F10 manufactured by Keyence Corporation.

More specifically, in order to make the amount of deformation of the tank 50 nm or less, a transmission window for measurement on the line (in the example shown in Figs. 1 (a) and 1 (b) (In the example shown in Figs. 1 (a) and 1 (b), a reinforcing plate 2b) around the circumference of the groove 2a of the base 2 As a result, the tank is reinforced by the reinforcing member, and the deformation amount of the tank can be reduced.

Here, in order to enhance the reinforcing effect, it is preferable that the reinforcing material covers at least the top, bottom, left and right sides of the transmission window for measurement, and it is further preferable to reinforce the entire side surface of the tank. As the material of the reinforcing material, it is preferable to use a metal such as SUS.

Alternatively, the chamber itself may be formed of a metal such as SUS, except for the portion of the transmission window for measurement.

It is preferable to adjust the height of the liquid level in the tank (the height of the water surface in the water tank 2 in the example shown in Figs. 1 (a) and 1 (b)) to be constant in order to reduce the deformation amount of the tank to 50 nm or less Do.

Specifically, for example, in the example shown in Figs. 1A and 1B, a liquid discharge portion (drainage portion in this example) is provided in a tank (the water tank 2 in this example) The liquid discharge amount (drain amount in this example) from the liquid discharge portion (discharge portion in this example) is measured by a liquid discharge amount measuring device (discharge amount measuring device), and based on the measured liquid discharge amount (discharge amount) It is preferable to control the amount of liquid (water supply amount) to be supplied to the wafer W and / or the moving speed of the transfer section for moving the wafer W to adjust the liquid discharge amount (drain amount).

≪ Second Embodiment >

FIG. 2 (a) is a schematic perspective view of a work thickness measuring apparatus according to a second embodiment of the present invention, and FIG. 2 (b) is a schematic view of a work thickness measuring apparatus according to a second embodiment of the present invention Fig.

2 (a) and 2 (b), in the work thickness measuring apparatus 1 of this embodiment, the distal end of the measuring instrument 3 is inserted into the water tub 2, 1 (a) and 1 (b) in that a gap 8 is provided between the measuring device 3 and the measuring device 3 shown in FIG. A cap 6 is provided at the front end of the measuring instrument 3 so that the metal measuring instrument 3 is protected by the cap 6. The metal measuring instrument 3 is sealed between the tip of the measuring instrument 3 and the cap 6. [ An air layer 7 is formed.

According to the second embodiment, since the basic configuration is the same as that of the first embodiment, the same operational effects as those of the first embodiment described above can be obtained.

According to the second embodiment, the gaps 8 are provided between the water tank 2 and the measuring instrument 3 so that the water 5 in the water tank 2 leaks from the gaps 8 The ratio of the distance between the air layer 7 and the water portion is changed without interfering with the measuring instrument 3 even when the water tray 2 is deformed due to variation in water pressure or the like so that change in the optical apparent distance is suppressed can do. Therefore, according to the present embodiment, the above problem caused by the presence of the air layer 7 can be avoided. According to the second embodiment, since the measuring instrument 3 can be brought close to the wafer W, the advantage of improving the measurement accuracy can be obtained.

In this embodiment, it is preferable to increase the amount of water to be supplied into the water tank 2 because the water 5 leaks from the water tank 2. However, turbulence of the water 5 occurs and the water W It is preferable to supply the water 5 to a degree slightly larger than the amount of water leaking from the gaps 8 so as not to cause a measurement error.

≪ Third Embodiment >

3 (a) is a schematic cross-sectional view of a work thickness measuring apparatus according to a third embodiment of the present invention, and Fig. 3 (b) is a cross sectional view of a work thickness measuring apparatus according to a third embodiment of the present invention And Fig.

The third embodiment is an example in which the water tank 2 itself is not used in order to eliminate deformation of the water tank 2 that causes a change in the ratio of the optical apparent distance between the air layer 7 and the water portion .

The liquid supply pipe 9 is provided with a liquid supply amount adjuster capable of adjusting the amount of water 5 to be supplied and adjusts the amount of water 5 to be supplied to the liquid supply pipe 9 at a position for measuring the thickness of the wafer W The water film 11 can be formed so that the measurement point is always immersed in the water 5.

3 (a), the water 5 is introduced into the liquid introduction pipe 10 from one end of the cylindrical liquid introduction pipe 10, and the liquid 5 is introduced into the liquid introduction pipe 10 ).

According to the third embodiment, at least a portion for measuring the thickness of the wafer W is first immersed in water. Therefore, as in the first and second embodiments, The thickness of the wafer W can be measured in a state in which the wafer W is immersed in water and the throughput of the polishing process can be secured as compared with the case where the thickness of the wafer W is measured after the wafer W is dried . Further, the change in the machining allowance amount of polishing is grasped by comparison with the thickness of the wafer W before polishing, and it is fed back to the polishing apparatus to change the polishing recipe and correct the parameters of the polishing conditions, It is possible to appropriately control the amount of polishing by the polishing pad. By using the measurement result according to the present embodiment, the flatness (particularly the flatness of the outer peripheral portion) of the wafer W after polishing and the density of the LPD can be improved. Further, by controlling the amount of machining allowance for polishing, the amount of disposable polishing slurry can be appropriately used, and the material cost can be reduced.

Also in the third embodiment, the wafer W is moved in the radial direction of the wafer W by a transferring unit (not shown), so that the wafer W in all the planes in the diameter range in which the wafer W exists ) Can be measured. According to the present embodiment, it is possible to measure the thickness of the wafer W without depending on the impurity concentration of the wafer W, as in the first and second embodiments.

According to the third embodiment, since the water tank 2 is not used, no error is given to the measurement of the thickness of the wafer W due to the deformation of the water tank 2 as described above, And the air layer 7 interposed therebetween can be avoided. Further, by making the measuring instrument 3 closer to the wafer 3, it becomes possible to use the measuring instrument 3 with high precision.

≪ Fourth Embodiment >

Fig. 4A is a schematic sectional view of a work thickness measuring apparatus according to a fourth embodiment of the present invention, and Fig. 4B is a sectional view of a work thickness measuring apparatus according to a fourth embodiment of the present invention And Fig.

In the fourth embodiment, as shown in Fig. 4 (a), the wafer W is sandwiched between the wafers W such that the diameters thereof are arranged in a horizontal direction (direction perpendicular to gravity) And is different from the third embodiment in that two measuring devices 3 are arranged so as to face each other.

The fourth embodiment can bring about the same operational effects as those of the third embodiment.

In particular, according to the fourth embodiment, it is easy to hold the water film 11 on the upper surface of the wafer W. Further, the water film 11 can be held by supplying water to the lower surface of the wafer W with high pressure.

(Method for measuring the thickness of a workpiece)

The method for measuring the thickness of a work according to one embodiment of the present invention includes a step of immersing at least a part of the wafer W after polishing in a liquid such as pure water as described with reference to Figs. As a method of immersing the wafer W in the liquid, for example, as shown in Figs. 1 and 2, the wafer W may be arranged in the water tank 2 using the water tank 2, 3, as shown in Fig. 4, the water pressure may be made strong, for example, by the liquid supply pipe 9 so that the water film 11 is formed on a part of the wafer W. [ Alternatively, other methods may be used.

At least two measuring devices 3 which are arranged so as to sandwich the wafer W therebetween and at least a part of the wafer W is immersed in the liquid and measure the distance to the surface of the wafer W, And measuring the thickness of the portion of the wafer W immersed in the liquid.

According to the work thickness measurement method of the present embodiment, the thickness of the wafer W can be measured while the wafer W is wet, and the thickness of the wafer W is measured after the wafer W is dried The throughput of the batch processing of the polishing can be secured. Further, the change in the machining allowance amount of polishing is grasped by comparison with the thickness of the wafer W before polishing, and it is fed back to the polishing apparatus to change the polishing recipe and correct the parameters of the polishing conditions, It is possible to appropriately control the amount of polishing by the polishing pad. By using the measurement results obtained by the method of the present embodiment, the flatness (particularly the flatness of the outer peripheral portion) of the wafer W after polishing and the density of the LPD can be improved. In addition, by managing the amount of machining allowance for polishing, the amount of disposable polishing slurry can be appropriately used, and the material cost can be reduced.

(A polishing apparatus for a workpiece)

A polishing apparatus for a workpiece according to an embodiment of the present invention includes a receiving section (not shown) for receiving information on the thickness of the wafer W, which is measured by the above-described workpiece thickness measuring apparatus and measuring method, (Not shown) for changing the polishing recipe or correcting the parameters of the polishing conditions on the basis of the information of the thickness of the wafer W received by the polishing apparatus. Specifically, the polishing section can correct the polishing time and the like, for example. The polishing apparatus may be a double-side polishing apparatus or a single-side polishing apparatus.

According to the polishing apparatus for a work according to the present embodiment, it is possible to appropriately control the amount of polishing while securing the throughput. Therefore, the flatness (particularly the flatness of the outer peripheral portion) of the work after polishing can be improved, and the density of defects such as LPD can also be reduced.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments. In the following, embodiments of the present invention will be described, but the present invention is not limited to these embodiments.

Example

(Example 1)

A test was performed to measure the thickness of the silicon wafer after polishing by using two different types of measuring devices for measuring the distance to the wafer. The polishing was performed using a general one-side polishing apparatus. As shown in the following Table 1, two types of substrates of p - and p ++ having a diameter of 300 mm were used for the silicon wafer. Further, as a measuring device of the type that evaluates the interference of the reflected light on the front and back surfaces of the wafer in water, it is available from Hamamatsu Hontonics Co., As a measuring device capable of measuring the distance to the surface of the wafer in water, which can be used in the present invention, using Optical MicroGauge (Conventional Example 1), manufactured by Keyence Corporation; SI-F10 (Inventive Example 1). Further, as a comparative object, manufactured by Kuroda KK; The thickness of the wafer after drying was measured using a nanometer (Comparative Example). In Inventive Example 1 and Comparative Example, measurement was performed by using a device of the type sandwiching wafers with two measuring devices as shown in Fig. On the other hand, in the conventional example, the measuring instrument was disposed only on one side of the wafer.

The evaluation results are shown in Table 1 below.

Figure 112016064799590-pct00001

As shown in Table 1, the thickness of the p - substrate was able to measure the thickness of the wafer with high precision both in Conventional Example 1 and Example 1, but the thickness of the p ++ substrate was measured in Conventional Example 1 While in Inventive Example 1, it was found that the thickness of the wafer could be measured with high accuracy.

(Example 2)

Next, the SFQR (Site Front Least Square Range) at the time of measuring the thickness of the wafer after the one side polishing and feeding back the wafer to the one side polishing apparatus to correct the polishing time is measured to calculate the difference (SFFR) I got it. Here, the above-described one-side polishing apparatus includes a calculating section for correcting the polishing time based on information of the thickness of the wafer received, and a receiving section for receiving information on the measured thickness of the wafer, This is the same as the single-side polishing apparatus. The silicon wafer provided for polishing was a p - type silicon wafer having a diameter of 300 mm. The SFQR is defined as a plane in the site calculated by the least squares method in the set site as a reference plane and the + side from the plane (i.e., the upper side when the main surface of the wafer is horizontally placed upward) , And - side (same lower side) of the maximum displacement amount. In Example 2, the measurement was made within a site size of 26 x 8 mm 2 using a flatness meter (manufactured by KLA-Tencor Co., Ltd., WaferSight).

Here, since the polishing rate varies depending on the operating condition of the polishing apparatus, the SFQR was evaluated by dividing the polishing rate into two cases at the time of start and then at the time of starting again. The evaluation results are shown in Table 2 below. In Table 2, Inventive Example 2 is the case where the above feedback is performed, and Conventional Example 2 is the case where the above feedback is not performed. When the sign of? SFQR is positive in Table 2, SFQR deteriorates after one side polishing. The measurement of the thickness of the wafer after the one side polishing was performed in the same manner as in Inventive Example 1. [

Figure 112016064799590-pct00002

As shown in Table 2, in Conventional Example 2, since the polishing time was made constant,? SFQR was large and the flatness was lowered when the single-side polishing apparatus was stopped and restarted. On the other hand, in Inventive Example 2, since information of the measured wafer thickness after polishing is fed back to the single-side polishing apparatus and the polishing time is adjusted (520 sec),? SFQR is also small at the time of stopping and restarting, .

(Example 3)

Next, the thickness of the wafer after the one side polishing was measured and fed back to the one side polishing apparatus to evaluate the LPD density when the polishing time was corrected. The LPD density was evaluated using a particle counter (KLA-Tencor SP2). Here, the above-described one-side polishing apparatus includes a calculating section for correcting the polishing time based on information of the thickness of the wafer received, and a receiving section for receiving information on the measured thickness of the wafer, This is the same as the single-side polishing apparatus. The silicon wafer provided for polishing was a p - type silicon wafer having a diameter of 300 mm. Since the polishing rate fluctuated depending on the operating conditions of the polishing apparatus, the LPD density was evaluated by dividing the polishing rate into two cases: once stopped and then restarted and continuously operated. The evaluation results are shown in Table 3 below. In Table 3, Inventive Example 3 is a case in which the above feedback is performed, and Conventional Example 3 is a case in which the above feedback is not performed. The thickness of the wafer after the one side polishing was measured in the same manner as in Inventive Example 1. [

Figure 112016064799590-pct00003

As shown in Table 3, in Conventional Example 3, since the polishing time was made constant, when the single-side polishing apparatus was stopped and restarted, the density of LPD was large and defects were generated a lot. In Inventive Example 3, Since the wafer thickness information was fed back to the single-side polishing apparatus and the polishing time was adjusted (520 sec), it was found that the generation of LPD could be suppressed even after the stop and restart. Further, by controlling the amount of machining allowance for polishing, the amount of disposable polishing slurry can be appropriately used, and the material cost can be reduced.

(Example 4)

Next, the measurement error of the thickness of the wafer and the deformation amount of the water tank when the material and thickness of the water tank were changed were monitored and evaluated. As a silicon wafer to be provided for polishing, a p ++ type substrate having a diameter of 300 mm was used. For polishing, a general one-side polishing apparatus was used. Here, the measurement error was measured when the SI-F10 manufactured by Keyens Co., Ltd. was used for the apparatus shown in Fig. 1, and when the thickness of the wafer after drying was measured using Nanodrome manufactured by Kuroda Co., The meeting was measured, and the maximum value of the difference of the measurement results was regarded as a measurement error. Further, the amount of deformation of the water tank was monitored during the measurement time using SI-F10 manufactured by KEYENCE CORPORATION, and the maximum displacement therebetween was regarded as the deformation amount of the water tank.

The evaluation results are shown in Table 4 below. In Table 4, the "measurement error" is represented by the relative index when the case of the acrylic resin (thickness 8 mm) is taken as 100, and the smaller the value, the smaller the "measurement error". As shown in Fig. 1, metal reinforcement was performed by attaching a reinforcing plate made of SUS to a water tank. The displacement amount was controlled by adjusting the feed rate and the moving speed of the wafer by monitoring the displacement amount.

Figure 112016064799590-pct00004

As shown in Table 4, when quartz was used, it was found that the amount of deformation of the water tank was greatly reduced, thereby greatly improving the measurement error. Further, it can be seen that as the thickness of the water tank is increased, the amount of deformation of the water tank is reduced, and the measurement error is also reduced.

It is also understood that, by metal reinforcement, the deformation amount of the water tank is further reduced, and the measurement error is further reduced. Further, it can be seen that the deformation amount of the water tank is further reduced by controlling the water drainage amount, and the measurement error is further reduced.

(Example 5)

Next, the measurement error of the wafer thickness when using the water tank shown in Fig. 2 was evaluated in comparison with the measurement error in the case of using the water tank (but without the reinforcing plate) shown in Fig. The evaluation method is the same as in the fourth embodiment. The material and thickness of the water tank were the same. In Table 5, the "measurement error" is represented by a relative value when the case of FIG. 1 is taken as 100, and a smaller value means that the error is small. In the present embodiment, it is assumed that the displacement amount control is not performed.

Figure 112016064799590-pct00005

When the apparatus shown in Fig. 2 is used, it can be seen that the measurement error is largely reduced as shown in Table 5 because the water tank has a gap and the deformation of the water tank does not interfere with the measuring instrument.

(Example 6)

Next, the measurement error of the wafer thickness when using the apparatus shown in Fig. 3 was evaluated in comparison with the measurement error in the case of using the water tank (but without the reinforcing plate) shown in Fig. The evaluation method is the same as in Examples 4 and 5. In Table 6, " measurement error " is represented by a relative value when the case of Fig. 1 is taken as 100, and a smaller value means that the error is small. In the present embodiment, it is assumed that the displacement amount control is not performed.

Figure 112016064799590-pct00006

As shown in Table 6, when the apparatus shown in Fig. 3 is used, it is understood that the measurement error can be largely reduced because the water tank itself causing the measurement error is not used.

(Example 7)

Next, in the same manner as in Example 2, the SFQR (Site Front Least Square Range) at the time of measuring the thickness of the wafer after the single side polishing and feeding back the wafer to the single side polishing apparatus to correct the polishing time was measured, The difference (SFFR) between SFQRs was obtained. The test was carried out in three ways: no metal reinforcement and discharge amount control were performed, only metal reinforcement, and metal reinforcement and discharge amount control. The measurement of the thickness of the wafer after the one side polishing was performed in the same manner as in Inventive Example 1. [

In Table 7, the evaluation result is represented by a relative value of the standard deviation of? SFQR, and the case where the metal reinforcement and the displacement amount control are not performed together is set to 100, and the smaller the value, the smaller the deviation is.

The metal reinforcement and the amount of displacement were controlled in the same manner as in Example 4. [

Figure 112016064799590-pct00007

As shown in Table 7, by performing the metal reinforcement, the relative value of the standard deviation of? SFQR can be further reduced, and by performing the metal reinforcement and the displacement control, it is possible to further reduce the relative value of the standard deviation of? SFQR .

1 Work thickness measuring device
2 tank
3 measuring instrument
4 supporting member
5 water
6 caps
7 air layer
8 gaps
9 liquid supply pipe
10 liquid introduction pipe
11 meninges
W work (wafer)

Claims (21)

A liquid immersion machine for immersing at least a part of the work after polishing into a liquid,
And two or more measuring instruments capable of measuring the distance to the surface of the portion of the work immersed in the liquid while sandwiching the work therebetween,
And,
Wherein the liquid immersing device is a tank capable of accommodating the workpiece therein,
And a controller for adjusting the height of the liquid level in the tank to be constant. The method according to claim 1,
And a support member for fixing the measuring device. 3. The method according to claim 1 or 2,
Wherein the measuring device has a cap at a tip end thereof. The method according to claim 1,
Wherein said group is made of quartz or plate glass. The method according to claim 1,
Wherein the liquid is water. The method according to claim 1,
Wherein the measuring device is an optical spectroscopic interference measuring device. The method according to claim 1 or 4,
Wherein the deformation amount of the bath is 50 nm or less at the time of measuring the thickness of the work. 8. The method of claim 7,
And a reinforcing plate is disposed in the tank. 8. The method of claim 7,
The tank includes a liquid discharge portion, a liquid discharge amount measuring device for measuring a discharge amount of liquid from the liquid discharge portion, and a control portion for adjusting the liquid discharge amount based on the measured liquid discharge amount. A step of immersing at least a part of the work after polishing in a liquid in the bath capable of accommodating the work;
Wherein at least a part of the workpiece is immersed in the liquid so that the distance between the workpiece and the surface of the portion of the workpiece immersed in the liquid can be measured by two or more measuring devices, And a step of measuring a thickness of the work,
And adjusting the height of the liquid surface in the tank to be constant. A receiver for receiving information on the thickness of the workpiece measured by the workpiece thickness measuring device according to claim 1;
And an arithmetic section for performing the switching of the polishing recipe or the correction of the parameters of the polishing conditions based on the information of the thickness of the work. A receiver for receiving information on the thickness of the workpiece measured by the workpiece thickness measuring method according to claim 10;
And an arithmetic section for performing the switching of the polishing recipe or the correction of the parameters of the polishing conditions based on the information of the thickness of the work. A liquid immersion machine for immersing at least a part of the work after polishing into a liquid,
And two or more measuring instruments capable of measuring the distance to the surface of the portion of the work immersed in the liquid while sandwiching the work therebetween,
And,
Wherein the liquid immersing device is capable of tightly holding the workpiece therein,
Wherein at least a part of the measuring instrument is inserted in the tank,
And a gap between the jaw and the measuring instrument,
And the liquid in the tank leaks from the gap. 14. The method of claim 13,
And a support member for fixing the measuring device. The method according to claim 13 or 14,
Wherein the measuring device has a cap at a tip end thereof. 14. The method of claim 13,
Wherein said group is made of quartz or plate glass. 14. The method of claim 13,
Wherein the liquid is water. 14. The method of claim 13,
Wherein the measuring device is an optical spectroscopic interference measuring device. A step of immersing at least a part of the work after polishing in a liquid in a bath capable of accommodating the work;
Wherein at least a part of the workpiece is immersed in the liquid so that the distance between the workpiece and the surface of the portion of the workpiece immersed in the liquid can be measured by two or more measuring devices, And a step of measuring a thickness of the work,
Wherein at least a part of the measuring instrument is inserted in the tank,
And a gap between the jaw and the measuring instrument,
And the liquid in the tank leaks from the gap. A receiving section for receiving information on the thickness of the workpiece measured by the workpiece thickness measuring apparatus according to claim 13;
And an arithmetic section for performing the switching of the polishing recipe or the correction of the parameters of the polishing conditions based on the information of the thickness of the work. A receiving section for receiving information on the thickness of the workpiece measured by the method for measuring the thickness of the workpiece according to claim 19;
And an arithmetic section for performing the switching of the polishing recipe or the correction of the parameters of the polishing conditions based on the information of the thickness of the work.
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