CN113054042B - Optoelectronic semiconductor component with substrate structure - Google Patents

Optoelectronic semiconductor component with substrate structure Download PDF

Info

Publication number
CN113054042B
CN113054042B CN202110277533.4A CN202110277533A CN113054042B CN 113054042 B CN113054042 B CN 113054042B CN 202110277533 A CN202110277533 A CN 202110277533A CN 113054042 B CN113054042 B CN 113054042B
Authority
CN
China
Prior art keywords
heat dissipation
substrate
fixedly connected
driving cavity
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110277533.4A
Other languages
Chinese (zh)
Other versions
CN113054042A (en
Inventor
王新刚
侯宁
贺伟
王丹阳
赵红梅
庞凯歌
刘晓芳
张洛花
陈英
胡玥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Newit Electric Technology Co.,Ltd.
Original Assignee
Henan University of Urban Construction
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Henan University of Urban Construction filed Critical Henan University of Urban Construction
Priority to CN202110277533.4A priority Critical patent/CN113054042B/en
Publication of CN113054042A publication Critical patent/CN113054042A/en
Application granted granted Critical
Publication of CN113054042B publication Critical patent/CN113054042B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/024Arrangements for cooling, heating, ventilating or temperature compensation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/647Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

Abstract

The invention discloses a photoelectronic semiconductor device with a substrate structure, which comprises a device body and a substrate, wherein a connecting mechanism is arranged on the substrate, the device body comprises a shell, a heat conducting device and a clamping mechanism, the device body is positioned above the substrate, the heat conducting device comprises a heat conducting mechanism and a heat radiating mechanism, the heat radiating mechanism comprises a plurality of air outlets arranged at the top of the shell, the inner side walls of the air outlets are fixedly connected with a dustproof net, the clamping mechanism comprises a current conducting plate fixedly connected with the inner side walls of the shell, the bottom of the current conducting plate is fixedly connected with pins, and the connecting mechanism comprises a plurality of inserting blocks fixedly connected on the substrate. According to the invention, current flows and is transmitted to the electric vibrating plate, the vibration of the electric vibrating plate periodically extrudes and stretches the driving cavity, the cooling liquid flows and is collected in the collecting pipe, the heat in the device is rapidly transmitted to the outside, the damage caused by overhigh temperature when the device is used is avoided, and the service life of the device is effectively prolonged.

Description

Optoelectronic semiconductor component with substrate structure
Technical Field
The present invention relates to the field of electronic devices, and more particularly, to an optoelectronic semiconductor device having a substrate structure.
Background
The optoelectronic semiconductor device refers to various functional devices made by utilizing semiconductor light-electron (or electricity-photon) conversion effect, which is different from semiconductor optical devices (such as optical waveguide switch, optical modulator, optical deflector, etc.), the design principle of the optical device is based on the change of the propagation mode of guided wave light by external field, and it is also different from the photoelectric device which is used in the early days, the latter is only focused on the receiving and conversion of light energy (such as photoresistor, photocell, etc.), the early photoelectric device is only limited to passive application, the semiconductor laser which is used as coherent light carrier source in the 60 s is appeared, so that it enters into the active application stage, and the functions of the combined application of the optoelectronic devices are expanding the functions which are difficult to be executed by electronics in some aspects (such as optical communication, optical information processing, etc.).
However, the existing optoelectronic semiconductor device with a carrier film and a substrate structure has some disadvantages in the use process, generally pins are adopted for fixing, the pins are easily damaged when being stressed too much, and the stability of pin connection is affected, wherein the pins are welded on a circuit board by soldering a chip, so that the bottom of the chip is completely contacted with the circuit board, the device is damaged in the use process, and after the device is damaged, the tin on the pins needs to be liquefied by sweat absorption, so that the device is taken out, but the process can cause the damage of other connected devices; secondly, the temperature generated during the operation of the chip is difficult to radiate outwards, and the device is easy to damage under the condition that the internal heat cannot be radiated for a long time, so that the service life of the device is influenced, and therefore, the photoelectronic semiconductor device with the substrate structure is provided.
Disclosure of Invention
The invention aims to solve the defects in the prior art and provides an optoelectronic semiconductor device with a substrate structure.
In order to achieve the purpose, the invention adopts the following technical scheme:
a photoelectronic semiconductor device with a substrate structure comprises a device body and a substrate, wherein a connecting mechanism is arranged on the substrate, the device body comprises a shell, a heat conducting device and a clamping mechanism, and the device body is positioned above the substrate;
the heat conduction device comprises a heat conduction mechanism and a heat dissipation mechanism, the heat conduction mechanism comprises a heat dissipation plate, a collection pipe and a driving cavity, the outer side wall of the heat dissipation plate is fixedly connected with the inner side wall of the shell, a cavity is formed between the heat dissipation plate and the shell, heat dissipation channels are arranged in the heat dissipation plate in parallel and at equal intervals, the heat dissipation channels are parallel to the plate surface of the heat dissipation plate, flow guide holes are vertically arranged on the heat dissipation channels, two ends of each flow guide hole are respectively communicated with the collection pipe and the driving cavity, a return pipe is connected between the collection pipe and the driving cavity, and the inner side wall of the return pipe is fixedly connected with a one-way vent valve;
the heat dissipation mechanism comprises a plurality of air outlets formed in the top of the shell, and dust screens are fixedly connected to the inner side walls of the air outlets.
Preferably, screens mechanism includes the current conducting plate of fixed connection at the casing inside wall, current conducting plate bottom fixedly connected with pin, the pin lateral wall has cup jointed the separation circle, separation circle top and current conducting plate bottom fixed connection, a plurality of electrically conductive antennas of pin lateral wall fixed connection.
Preferably, the connecting mechanism comprises a plurality of inserting blocks fixedly connected to the substrate, slots corresponding to the pins are formed in the inserting blocks, the pins are in contact with the inner side walls of the slots, and the bottoms of the inserting blocks penetrate through the substrate and extend downwards.
Preferably, the outer side wall of the inserting block is provided with a visible hole.
Preferably, the upper surface and the lower surface of the driving cavity are attached with electric vibration pieces which can be electrically connected with a circuit, and a vibration transmission piece with a circular arc-shaped section is connected between the two electric vibration pieces.
Preferably, the driving cavity is filled with cooling liquid.
Preferably, the return pipe is made of a ceramic pipe.
Preferably, the drive chamber is made of an elastic material.
The beneficial effects of the invention are as follows:
1. according to the invention, current flows to the electric vibrating piece, the electric vibrating piece generates vibration with corresponding amplitude along with the current, so that the vibration of the electric vibrating piece periodically extrudes and stretches the driving cavity, the driving cavity is extruded when the electric vibrating piece vibrates, cooling liquid in the driving cavity flows into the heat dissipation channel, the cooling liquid in the heat dissipation channel quickly absorbs heat generated by work on a device, the cooling liquid flows and gathers in the collecting pipe, meanwhile, when the electric vibrating piece vibrates and stretches the driving cavity, the volume in the driving cavity is increased, so that the generated air pressure is reduced, and the process that the cooling liquid in the collecting pipe flows in the driving cavity quickly conducts the heat in the device to the outside, so that the damage caused by overhigh temperature when the device is used is avoided, and the service life of the device is effectively prolonged.
2. According to the invention, the pins connected with the bottom of the shell are arranged in the slots in the inserting blocks, so that the stability of pin installation is ensured, meanwhile, the conductive antenna on the pins increases the friction force between the pins and the slots, the gaps between the pins with different sizes of different components and parts and the slots are also avoided, the pins can be effectively contacted with the inserting blocks, the pins are prevented from being fixed by tinning, meanwhile, the stability of device installation is ensured by the cooperation of the pins and the inserting blocks, the damage caused by soldering tin is effectively prevented, the influence of the following and replacing device body on other electronic devices is also avoided, and the device body is convenient to replace and maintain.
Drawings
Fig. 1 is a three-dimensional view of an optoelectronic semiconductor component according to the invention with a substrate structure.
Fig. 2 is a schematic structural diagram of an optoelectronic semiconductor device having a substrate structure according to the present invention.
Fig. 3 is a schematic structural connection diagram of a thermal conduction device of an optoelectronic semiconductor device having a substrate structure according to the present invention.
Fig. 4 is a side view of an optoelectronic semiconductor device thermal conduction apparatus with a substrate structure according to the present invention.
FIG. 5 is a schematic structural diagram of a heat dissipation channel, a reflow hole, a header and a driving chamber of an optoelectronic semiconductor device with a substrate structure according to the present invention.
Fig. 6 is a schematic structural connection diagram of a pin and a stop ring of an optoelectronic semiconductor device having a substrate structure according to the present invention.
Reference numbers in the figures: 1. a housing; 2. a substrate; 3. a heat dissipation plate; 4. a heat dissipation channel; 5. a flow guide hole; 6. a drive chamber; 7. a header; 8. a return pipe; 9. a one-way vent valve; 10. an air outlet; 11. a dust screen; 12. a conductive plate; 13. a pin; 14. a barrier ring; 15. inserting the block; 16. an electric vibrating piece.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Referring to fig. 1-6, an optoelectronic semiconductor device with a substrate structure comprises a device body and a substrate 2, wherein the substrate 2 is provided with a connecting mechanism, the device body comprises a shell 1, a heat conducting device and a clamping mechanism, and the device body is positioned above the substrate 2;
the heat conduction device comprises a heat conduction mechanism and a heat dissipation mechanism, the heat conduction mechanism comprises a heat dissipation plate 3, a collection pipe 7 and a driving cavity 6, the outer side wall of the heat dissipation plate 3 is fixedly connected with the inner side wall of a shell 1, a cavity is formed between the heat dissipation plate 3 and the shell 1, heat dissipation channels 4 are arranged in the heat dissipation plate 3 in parallel at equal intervals, the heat dissipation channels 4 are parallel to the plate surface of the heat dissipation plate 3, flow guide holes 5 are vertically arranged on the heat dissipation channels 4, two ends of each flow guide hole 5 are respectively communicated with the collection pipe 7 and the driving cavity 6, a return pipe 8 is connected between the collection pipe 7 and the driving cavity 6, and the inner side wall of the return pipe 8 is fixedly connected with a one-way vent valve 9;
the heat dissipation mechanism is including establishing a plurality of gas outlets 10 at 1 top of casing, and a plurality of gas outlets 10 inside wall fixedly connected with dust screen 11, and inside dust screen 11 prevented that the dust from entering into the device, caused the damage to the device.
Wherein, screens mechanism includes the current conducting plate 12 of fixed connection at the casing 1 inside wall, and current conducting plate 12 bottom fixedly connected with pin 13, and pin 13 lateral wall has cup jointed separation ring 14, and separation ring 14 separates casing 1 and substrate 2, makes things convenient for current conducting plate 12 can dispel the heat in the bottom, increases heat radiating area, and separation ring 14 top and current conducting plate 12 bottom fixed connection, a plurality of conductive feelers of pin 13 lateral wall fixed connection.
The connecting mechanism comprises a plurality of inserting blocks 15 fixedly connected to the substrate 2, inserting grooves corresponding to the pins 13 are formed in the inserting blocks 15, the pins 13 are in contact with the inner side walls of the inserting grooves, and the bottoms of the inserting blocks 15 penetrate through the substrate 2 and extend downwards.
Wherein, insert the piece 15 lateral wall and be equipped with the visual hole, insert the slot when pin 13, because pin 13 is comparatively fragile to easy tortuous, visual hole side observes the pin 13 in the slot and whether with insert the effective connection of piece 15.
The upper surface and the lower surface of the driving cavity 6 are attached with electric vibration pieces 16 which can be electrically connected with a circuit, a vibration transmission piece with a circular arc-shaped section is connected between the two electric vibration pieces 16, and the vibration transmission piece can enable the two electric vibration pieces 16 to vibrate in a coordinated manner, so that the working efficiency of the driving cavity 6 is remarkably improved.
Wherein, the driving chamber 6 is filled with cooling liquid, and the cooling liquid can absorb heat and reduce the temperature nearby.
The return pipe 8 is made of a ceramic pipe, and the ceramic can quickly dissipate heat in a heat radiation mode when the temperature is high.
Since the driving chamber 6 is made of an elastic material, when the vibrating plate 16 stretches the driving chamber 6, the volume in the driving chamber 6 is increased and the internal pressure is reduced.
The working principle is as follows:
during the use, install pin 13 of connecting casing 1 bottom in inserting the slot of establishing in piece 15, the stability of pin 13 installation has been guaranteed, the electrically conductive feeler on pin 13 simultaneously, the frictional force of pin 13 with the slot has been increased, the not equidimension of different components and parts pin 13 and the space between the slot have also been avoided, make pin 13 can effectually with insert establish the piece 15 contact, it is fixed to have avoided simultaneously tinning pin 13, the effectual damage that prevents because soldering tin causes, the influence of changing the ware body to other electron devices has also been avoided following.
After the device is installed, in normal use, current is transmitted to the pins 13 through the inserting blocks 15 and is transmitted to the conductive plates 12, then the conductive plates 12 are transmitted to the corresponding electric vibrating pieces 16, the electric vibrating pieces 16 generate vibration with corresponding amplitude along with the current, meanwhile, the electric vibrating pieces 16 enable the electric vibrating pieces 16 at the top to vibrate through the electric vibrating pieces, and the vibration of the two electric vibrating pieces 16 periodically extrudes and stretches the driving cavity 6.
The driving cavity 6 is squeezed when the electric vibrating piece 16 vibrates, the cooling liquid in the driving cavity 6 flows into the heat dissipation channel 4, the cooling liquid in the heat dissipation channel 4 rapidly absorbs heat generated by work on a device, meanwhile, the cooling liquid flows and collects in the collecting pipe 7, when the electric vibrating piece 16 vibrates and stretches the driving cavity 6, the volume in the driving cavity 6 is increased, air pressure is reduced, the cooling liquid in the collecting pipe 7 flows into the return pipe 8, the cooling liquid is guided into the driving cavity 6 through the one-way ventilation valve 9, and meanwhile, when the cooling liquid passes through the return pipe 8, a large amount of heat is rapidly released to the outside through the ceramic side wall of the return pipe 8.
Meanwhile, a cavity is formed between the heat dissipation plate 3 and the shell 1, the plurality of air outlets 10 are formed in the top of the shell 1, the vibration of the electric vibration piece 16 drives the air in the cavity to flow, so that the flowing air can transfer heat at the top of the heat dissipation plate 3 out of the shell 1, and the effect of cooling the inside of the shell 1 is achieved.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or apparatus to which it is directed must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.

Claims (7)

1. The photoelectronic semiconductor device with the substrate structure comprises a device body and a substrate (2), and is characterized in that a connecting mechanism is arranged on the substrate (2), the device body comprises a shell (1), a heat conducting device and a clamping mechanism, and the device body is positioned above the substrate (2);
the heat conduction device comprises a heat conduction mechanism and a heat dissipation mechanism, the heat conduction mechanism comprises a heat dissipation plate (3), a collecting pipe (7) and a driving cavity (6), the outer side wall of the heat dissipation plate (3) is fixedly connected with the inner side wall of a shell (1), a cavity is formed between the heat dissipation plate (3) and the shell (1), heat dissipation channels (4) are arranged in the heat dissipation plate (3) in parallel at equal intervals, the heat dissipation channels (4) are parallel to the plate surface of the heat dissipation plate (3), flow guide holes (5) are vertically formed in the heat dissipation channels (4), two ends of each flow guide hole (5) are respectively communicated with the collecting pipe (7) and the driving cavity (6), a return pipe (8) is connected between the collecting pipe (7) and the driving cavity (6), and the inner side wall of the return pipe (8) is fixedly connected with a one-way vent valve (9);
the upper surface and the lower surface of the driving cavity (6) are attached with electric vibration pieces (16) which can be electrically connected with a circuit, and a vibration transmission piece with an arc-shaped section is connected between the two electric vibration pieces (16);
the heat dissipation mechanism comprises a plurality of air outlets (10) arranged at the top of the shell (1), and dust screens (11) are fixedly connected to the inner side walls of the air outlets (10);
the electric vibration piece (16) generates vibration with corresponding amplitude along with the current, so that the vibration of the electric vibration piece (16) periodically extrudes and stretches the driving cavity (6), the driving cavity (6) can be extruded when the electric vibration piece (16) vibrates, cooling liquid in the driving cavity (6) flows into the heat dissipation channel (4), the cooling liquid in the heat dissipation channel (4) quickly absorbs heat generated by work on a device, the cooling liquid flows and is collected into the collection pipe (7), and meanwhile, when the electric vibration piece (16) vibrates and stretches the driving cavity (6), the volume in the driving cavity (6) is increased, so that air pressure is reduced, and the heat in the device is quickly conducted to the outside in the process that the cooling liquid in the collection pipe (7) flows and drives the cavity (6).
2. The optoelectronic semiconductor device with a substrate structure as claimed in claim 1, wherein the clamping mechanism comprises a conductive plate (12) fixedly connected to the inner side wall of the housing (1), the bottom of the conductive plate (12) is fixedly connected with a pin (13), the outer side wall of the pin (13) is sleeved with a blocking ring (14), the top of the blocking ring (14) is fixedly connected with the bottom of the conductive plate (12), and the outer side wall of the pin (13) is fixedly connected with a plurality of conductive antennae.
3. An optoelectronic semiconductor device with a substrate structure according to claim 2, wherein the connecting mechanism comprises a plurality of insert blocks (15) fixedly connected to the substrate (2), the insert blocks (15) are internally provided with slots corresponding to the pins (13), the pins (13) are in contact with the inner side walls of the slots, and the bottom of the insert blocks (15) penetrates through the substrate (2) and extends downwards.
4. An optoelectronic semiconductor device with a substrate structure according to claim 3, characterized in that the outer side wall of the insert block (15) is provided with a visual hole.
5. An optoelectronic semiconductor component with a substrate structure according to claim 1, characterized in that the drive chamber (6) is filled with a cooling liquid.
6. An optoelectronic semiconductor component with a substrate structure as claimed in claim 1, characterized in that the return tube (8) is made of a ceramic tube.
7. An optoelectronic semiconductor component with a substrate structure according to claim 1, characterized in that the drive chamber (6) is made of an elastic material.
CN202110277533.4A 2021-03-15 2021-03-15 Optoelectronic semiconductor component with substrate structure Active CN113054042B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110277533.4A CN113054042B (en) 2021-03-15 2021-03-15 Optoelectronic semiconductor component with substrate structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110277533.4A CN113054042B (en) 2021-03-15 2021-03-15 Optoelectronic semiconductor component with substrate structure

Publications (2)

Publication Number Publication Date
CN113054042A CN113054042A (en) 2021-06-29
CN113054042B true CN113054042B (en) 2022-07-08

Family

ID=76512460

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110277533.4A Active CN113054042B (en) 2021-03-15 2021-03-15 Optoelectronic semiconductor component with substrate structure

Country Status (1)

Country Link
CN (1) CN113054042B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1210584A (en) * 1967-07-07 1970-10-28 Hitachi Ltd Semiconductor device and method of manufacturing the same
CN104221173A (en) * 2012-04-02 2014-12-17 欧司朗光电半导体有限公司 Light-emitting semiconductor component and method for producing a light-emitting semiconductor component
CN105409017A (en) * 2013-07-23 2016-03-16 欧司朗光电半导体有限公司 Surface-mountable optoelectronic semiconductor component and method for producing at least one surface-mountable optoelectronic semiconductor component
CN110430733A (en) * 2019-08-08 2019-11-08 郑州威科特电子科技有限公司 A kind of electronic component efficient radiating apparatus
CN211261136U (en) * 2019-12-24 2020-08-14 苏州其嘉净化设备有限公司 Shell structure for fresh air fan
CN211295114U (en) * 2019-12-20 2020-08-18 沈阳中凯科技有限公司 Optoelectronic semiconductor component with carrier film and substrate structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6465858B2 (en) * 2000-03-24 2002-10-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device package for optical communication device
US20060097385A1 (en) * 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
TWM314842U (en) * 2006-10-26 2007-07-01 David Kuo Dualpower temperature regulation system
JP6352430B2 (en) * 2014-01-23 2018-07-04 中国科学院蘇州納米技術与納米▲ファン▼生研究所 Wafer level semiconductor device and manufacturing method thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1210584A (en) * 1967-07-07 1970-10-28 Hitachi Ltd Semiconductor device and method of manufacturing the same
CN104221173A (en) * 2012-04-02 2014-12-17 欧司朗光电半导体有限公司 Light-emitting semiconductor component and method for producing a light-emitting semiconductor component
CN105409017A (en) * 2013-07-23 2016-03-16 欧司朗光电半导体有限公司 Surface-mountable optoelectronic semiconductor component and method for producing at least one surface-mountable optoelectronic semiconductor component
CN110430733A (en) * 2019-08-08 2019-11-08 郑州威科特电子科技有限公司 A kind of electronic component efficient radiating apparatus
CN111712115A (en) * 2019-08-08 2020-09-25 郑州威科特电子科技有限公司 High-efficient heat abstractor of electronic components
CN211295114U (en) * 2019-12-20 2020-08-18 沈阳中凯科技有限公司 Optoelectronic semiconductor component with carrier film and substrate structure
CN211261136U (en) * 2019-12-24 2020-08-14 苏州其嘉净化设备有限公司 Shell structure for fresh air fan

Also Published As

Publication number Publication date
CN113054042A (en) 2021-06-29

Similar Documents

Publication Publication Date Title
JP4929400B2 (en) Electronic system with free space optical elements
US10617034B2 (en) Heat dissipation system of enclosed electronic module with single/multiple active components
WO2020034862A1 (en) Camera
CN213125053U (en) Laser chip heat radiation structure
CN113054042B (en) Optoelectronic semiconductor component with substrate structure
JP7208407B2 (en) Laser modules and electronics
CN218334707U (en) Semiconductor laser heat radiation structure and heat radiation packaging structure
CN210405997U (en) Heat dissipation structure of electronic device
CN113448027B (en) Optical module heat radiation structure, optical module and optical communication equipment
CN217155102U (en) Temperature equalizing plate
CN216752619U (en) Heat dissipation assembly and electronic equipment
CN213122562U (en) Temperature-control air cooling device for camera
CN212519551U (en) Printed circuit board with high temperature resistance
CN111083338B (en) Heat conduction support and electronic equipment
CN210465771U (en) High-efficient radiating optical module
CN210133520U (en) Circuit board with plastic package structure
CN113300211A (en) Semiconductor laser packaging structure and preparation method thereof
CN218849474U (en) Chip antenna monomer structure based on multilayer concave embedded substrate
CN218296028U (en) Heat transfer mechanism, electric appliance box, outdoor unit and air conditioning system
CN110850531A (en) Multi-channel optical module integrated structure with high-efficiency heat dissipation capacity and high integration level
CN219496740U (en) Optical communication module with high heat dissipation rate
CN210328357U (en) Radiator for receiver
CN219478379U (en) Heat dissipation PCB structure
CN212992844U (en) Chip heat dissipation type Ethernet switch
CN217030868U (en) Light source device easy to radiate

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20240118

Address after: 213000 No. 58 South Airport Road, Luoxi Town, New North District, Changzhou City, Jiangsu Province

Patentee after: Jiangsu Newit Electric Technology Co.,Ltd.

Address before: 467000 Henan province Pingdingshan city new city Longxiang Road

Patentee before: Henan University of Urban Construction