CN113053867A - Encapsulation module and electronic equipment - Google Patents
Encapsulation module and electronic equipment Download PDFInfo
- Publication number
- CN113053867A CN113053867A CN202110237574.0A CN202110237574A CN113053867A CN 113053867 A CN113053867 A CN 113053867A CN 202110237574 A CN202110237574 A CN 202110237574A CN 113053867 A CN113053867 A CN 113053867A
- Authority
- CN
- China
- Prior art keywords
- capacitor
- bonding pad
- pad
- chip
- welding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005538 encapsulation Methods 0.000 title claims description 11
- 239000003990 capacitor Substances 0.000 claims abstract description 100
- 238000003466 welding Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims description 52
- 229910000679 solder Inorganic materials 0.000 claims description 19
- 239000000853 adhesive Substances 0.000 claims description 13
- 230000001070 adhesive effect Effects 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 3
- 230000003068 static effect Effects 0.000 abstract description 27
- 230000005611 electricity Effects 0.000 abstract description 21
- 238000004806 packaging method and process Methods 0.000 abstract description 12
- 238000001914 filtration Methods 0.000 abstract description 5
- 230000000087 stabilizing effect Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000003292 glue Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 210000001638 cerebellum Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229920006335 epoxy glue Polymers 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 210000003928 nasal cavity Anatomy 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
Abstract
The invention discloses a packaging module and electronic equipment, wherein the packaging module comprises a shell, a chip component and a capacitor component, the shell is provided with a cavity and an inner cavity which are arranged at intervals, the inner wall of the cavity is provided with a routing bonding pad, and the outer wall of the shell is provided with a welding bonding pad; the chip assembly is arranged in the cavity and is arranged at intervals with the routing bonding pad, and the chip assembly is electrically connected with the routing bonding pad; the capacitor assembly is arranged in the inner cavity and is electrically connected with the routing bonding pad and the welding bonding pad. The invention aims to provide the packaging module which can effectively and directly eliminate static electricity and effectively play a role in filtering and stabilizing voltage.
Description
Technical Field
The present invention relates to the field of package structures, and particularly to a package module and an electronic device using the same.
Background
Encapsulation module, for example baroceptor etc. when scene applications such as smart mobile phone, intelligence dress, smart home, the gas pocket of encapsulation module communicates with each other with external environment through smart machine's passageway. Static electricity (air discharge/contact discharge) from the external environment can enter the packaging module through the channel (of the smart device), thereby causing product failure. In the related art, a structure for eliminating electrostatic influence is usually disposed outside the package module, but the effect of eliminating electrostatic influence is poor, the use experience of a customer is affected,
disclosure of Invention
The invention mainly aims to provide a packaging module and electronic equipment, and aims to provide a packaging module which can effectively and directly eliminate static electricity and effectively play a role in filtering and stabilizing voltage.
In order to achieve the above object, the present invention provides a package module, which includes:
the welding device comprises a shell, a welding piece and a welding piece, wherein the shell is provided with a containing cavity and an inner cavity which are arranged at intervals, the inner wall of the containing cavity is provided with a routing bonding pad, and the outer wall of the shell is provided with a welding pad;
the chip assembly is arranged in the cavity and is arranged at intervals with the routing bonding pad, and the chip assembly is electrically connected with the routing bonding pad; and
the capacitor assembly is arranged in the inner cavity and is electrically connected with the routing bonding pad and the welding bonding pad.
In one embodiment, the housing includes:
the inner cavity is arranged in the substrate, and the routing bonding pad and the welding bonding pad are arranged on two opposite sides of the substrate;
the shell is arranged on the substrate and forms the containing cavity with the substrate in an enclosing mode, and the routing bonding pad is located in the containing cavity; and
the conducting layer is arranged in the inner cavity, and the capacitor assembly is electrically connected with the routing bonding pad and the welding bonding pad through the conducting layer.
In one embodiment, the routing bonding pad comprises a VDD routing bonding pad and a GND routing bonding pad, and the VDD routing bonding pad and the GND routing bonding pad are located on two sides of the chip assembly;
the welding pads comprise a VDD welding pad and a GND welding pad, and the VDD welding pad and the GND welding pad are arranged on one side, back to the shell, of the substrate at intervals;
one end of the capacitor assembly is connected with the VDD routing bonding pad and the VDD welding bonding pad through the conducting layer, and the other end of the capacitor assembly is connected with the GND routing bonding pad and the GND welding bonding pad through the conducting layer.
In one embodiment, the capacitor assembly comprises a first capacitor and a second capacitor which are arranged at intervals;
one end of the first capacitor is connected with the VDD routing bonding pad and the VDD welding bonding pad through the conducting layer, and the other end of the first capacitor is connected with the GND routing bonding pad and the GND welding bonding pad through the conducting layer;
one end of the second capacitor is connected with the VDD routing pad and the VDD welding pad through the conducting layer, and the other end of the second capacitor is connected with the GND routing pad and the GND welding pad through the conducting layer.
In one embodiment, the first capacitor and the second capacitor are decoupling capacitors;
and/or the capacitance value of the first capacitor is 80 nF-120 nF;
and/or the capacitance value of the second capacitor is 2-6 muF;
and/or the first capacitor and the second capacitor are connected with the conducting layer through solder balls;
and/or the first capacitor and the second capacitor are embedded in the substrate through a substrate embedded component technology.
In one embodiment, the housing is connected to the substrate by solder paste, conductive paste or epoxy paste;
and/or the shell is of a cylindrical structure with two open ends;
and/or, the outer wall of shell is provided with the recess in a concave manner, the recess is arranged along the circumference of shell.
In an embodiment, the package module further includes a waterproof adhesive, and the waterproof adhesive is filled in the cavity and covers the chip assembly.
In one embodiment, the chip assembly includes:
the ASIC chip is arranged on the bottom wall of the containing cavity and is electrically connected with the routing bonding pad; and
the MEMS chip is arranged on one side, back to the bottom wall of the containing cavity, of the ASIC chip and is electrically connected with the ASIC chip.
In one embodiment, the ASIC chip is electrically connected to the bonding pad by gold wires;
and/or the MEMS chip is electrically connected with the ASIC chip through a gold wire;
and/or the ASIC chip is connected with the bottom wall of the cavity through adhesive;
and/or the MEMS chip is connected with the ASIC chip through adhesive.
The invention also provides electronic equipment which comprises an equipment shell and the packaging module, wherein the packaging module is arranged on the equipment shell.
According to the technical scheme, the packaging module is provided with the accommodating cavity and the inner cavity which are arranged at intervals on the shell, the routing bonding pad is arranged on the inner wall of the accommodating cavity, and the welding bonding pad is arranged on the outer wall of the shell, so that the chip assembly is installed and fixed by using the accommodating cavity, the chip assembly is conveniently and electrically connected with the routing bonding pad, the capacitor assembly is installed and fixed by using the inner cavity, and meanwhile, the capacitor assembly arranged in the inner cavity is electrically connected with the routing bonding pad and the welding bonding pad, so that static electricity is directly and effectively eliminated by the capacitor assembly in the inner cavity before entering the chip assembly from the shell through the routing bonding pad, the influence of the static electricity on the chip assembly is effectively avoided, and the use experience of customers is greatly. The encapsulation module provided by the invention not only directly and effectively eliminates static electricity, improves the static electricity elimination effect, but also improves the use experience of customers.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
Fig. 1 is a schematic cross-sectional view of a package module according to an embodiment of the invention.
The reference numbers illustrate:
the implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
Also, the meaning of "and/or" and/or "appearing throughout is meant to encompass three scenarios, exemplified by" A and/or B "including scenario A, or scenario B, or scenarios where both A and B are satisfied.
In addition, the descriptions related to "first", "second", etc. in the present invention are only for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The air pressure is a physical quantity closely related to daily life of people, and air pressure data can be used for detecting height change in the vertical direction to perform motion monitoring, indoor navigation and auxiliary weather forecast, so that the sensor is widely applied to the fields of intelligent wearing, intelligent home furnishing and the like.
Encapsulation module, for example baroceptor etc. when scene applications such as smart mobile phone, intelligence dress, smart home, the gas pocket of encapsulation module communicates with each other with external environment through smart machine's passageway. Static electricity (air discharge/contact discharge) of the external environment can enter the packaging module through the channel (of the intelligent device), so that hard failure or soft failure of the product is caused.
Hard failure generally refers to: static electricity "breaks down" the IC chip in the sensor, causing permanent damage to the IC chip. Static factors (e.g., internally added ESD diode) are considered in IC design to prevent hard failures.
Soft failure refers to: the static electricity causes a Reset (Reset) of the IC chip in the product or causes a communication interruption of the product with the MCU. Both scenarios of soft failures, although not hardware damage, severely impact the customer experience. If static electricity is restarted, configuration information in the sensor is completely lost (when the sensor is powered on for the first time), the product stops working, and the product can continue working only by (customer) reconfiguration or power failure + Power On (POR) again, so that the use experience of the customer is influenced; if the communication between the product and the MCU is interrupted, the product can continue to work normally only by powering off and powering on again (POR), and the use experience of a client is influenced.
The path that static electricity typically enters the interior of a product and affects an IC chip is: static electricity is introduced from the housing, passes through the intermediate conductive material, and is finally transferred to the IC chip, thereby affecting the IC chip.
In the related art, 1 to 3 decoupling capacitors are usually arranged around a product (external) to solve the problem of soft failure of the product caused by static electricity (the capacitors are arranged between the product VDD and GND). However, the capacitor is disposed outside the product, and the effect of eliminating the electrostatic influence is general. At the in-process that static was transmitted by the shell toward the IC chip, the electric capacity did not directly carry out "filtering steady voltage" to block static, the filter capacitor overall arrangement is outside the product, only can play the effect of indirect "filtering steady voltage", leads to eliminating the effect of static influence relatively poor, influences customer's use and experiences.
Based on the above concept and problems, the present invention provides a package module 100, wherein the package module 100 may be a pressure sensor or other type of sensor, which is not limited herein. It is understood that the package module 100 may be applied to an electronic device, and the electronic device may be a smart wearable device, which is not limited herein.
Referring to fig. 1, in an embodiment of the present invention, the package module 100 includes a housing 1, a chip component 2, and a capacitor component 3, wherein the housing 1 is provided with a cavity 14 and an inner cavity 111, which are arranged at an interval, an inner wall of the cavity 14 is provided with a routing pad 112, and an outer wall of the housing 1 is provided with a soldering pad 113; the chip component 2 is arranged in the cavity 14 and is arranged at an interval with the routing bonding pad 112, and the chip component 2 is electrically connected with the routing bonding pad 112; the capacitor assembly 3 is arranged in the inner cavity 111, and the capacitor assembly 3 is electrically connected with the routing bonding pad 112 and the welding bonding pad 113.
In this embodiment, the casing 1 is used for mounting, fixing and protecting components such as the chip component 2 and the capacitor component 3, and the structure of the casing 1 may be a box, a mounting case, and the like having the cavity 14 and the inner cavity 111, which is not limited herein. It is understood that the material of the housing 1 may be a metal material, a plastic material, a ceramic material, or the like, and is not limited herein.
As can be appreciated, by providing the cavity 14 in the housing 1, the cavity 14 is conveniently utilized to fix and protect the chip assembly 2. Optionally, the cavity 14 of the housing 1 may be a closed cavity or a cavity with an opening, and is specifically selected according to a use scenario of the package module 100, and is not limited herein.
In the present embodiment, the inner cavity 111 is provided in the housing 1, so that the capacitor module 3 is mounted and fixed by the inner cavity 111. By arranging the inner cavity 111 and the accommodating cavity 14 at intervals, the problems of influence, signal interference and the like of the capacitor component 3 on the chip component 2 are avoided. Alternatively, the inner cavity 111 is a closed space, that is, the inner cavity 111 is a closed space provided inside the housing 1.
It will be appreciated that the chip assembly 2 is used for measuring and detecting data of the environment surrounding the package module 100, and the chip assembly 2 may be a discrete chip or an integrated single chip. For the discrete chips (i.e. ASIC chip + MEMS chip), the ASIC chip and the MEMS chip may be placed side by side, or the ASIC chip and the MEMS chip may also be stacked, that is, the ASIC chip is firstly adhered to the inner wall of the cavity 14, and then the MEMS chip is adhered to the ASIC chip, which is not limited herein. For an integrated single chip, the chip only needs to be adhered to the inner wall of the cavity 14, and is not limited herein.
In this embodiment, by providing the capacitor element 3, the static electricity generated in the application process of the package module 100 is eliminated by the capacitor element 3, thereby preventing the static electricity from affecting or damaging the chip element 2.
According to the packaging module 100, the accommodating cavity 14 and the inner cavity 111 are arranged on the shell 1 at intervals, the routing pad 112 is arranged on the inner wall of the accommodating cavity 14, and the welding pad 113 is arranged on the outer wall of the shell 1, so that the chip assembly 2 is installed and fixed by using the accommodating cavity 14, the chip assembly 2 is conveniently and electrically connected with the routing pad 112, the capacitor assembly 3 is installed and fixed by using the inner cavity 111, and the capacitor assembly 3 arranged in the inner cavity 111 is electrically connected with the routing pad 112 and the welding pad 113, so that static electricity is directly and effectively eliminated by the capacitor assembly 3 in the inner cavity 111 before entering the chip assembly 2 through the routing pad 112 from the shell 1, the influence of the static electricity on the chip assembly 2 is effectively avoided, and the use experience of a customer is greatly improved. The encapsulation module 100 provided by the invention not only directly and effectively eliminates static electricity, improves the static electricity elimination effect, but also improves the use experience of customers.
In an embodiment, as shown in fig. 1, the housing 1 includes a substrate 11, a casing 12 and a conductive layer 13, wherein the substrate 11 is provided with the inner cavity 111 therein, and the routing pads 112 and the soldering pads 113 are disposed on two opposite sides of the substrate 11; the housing 12 is disposed on the substrate 11, and encloses with the substrate 11 to form the cavity 14, and the bonding pad 112 is located in the cavity 14; the conducting layer 13 is arranged in the inner cavity 111, and the capacitor assembly 3 is electrically connected with the routing bonding pad 112 and the welding bonding pad 113 through the conducting layer 13.
In the present embodiment, the substrate 11 is used for mounting, fixing and supporting the components such as the housing 12, the conductive layer 13, the chip module 2, and the capacitor module 3, and the structure of the substrate 11 may be a plate-like structure. It will be appreciated that the substrate 11 may alternatively be a circuit board. The substrate 11 is a PCB board, on which a circuit is printed, so as to realize corresponding electrical functions, and the design can be selected according to actual needs. The PCB is formed by a multilayer structure, for example, the PCB comprises a substrate layer, one or more copper foil layers and one or more solder mask ink layers, and the selection is specifically carried out according to actual application scenes. Alternatively, the substrate 11 may be selected from FR4, BT, or ceramic, but is not limited thereto.
It will be appreciated that the conductive layer 13 may be a conductive trace integrally formed within the substrate 11. In order to attach the chip assembly 2 to the substrate 11 and electrically connect with the conductive layer 13 inside the substrate 11, in this embodiment, a bonding pad, such as a wire bonding pad 112, is disposed on one side surface of the substrate 11. The bonding pad is used for electrically connecting with the chip assembly 2, and the bonding pad may have a structure such as copper, a contact, a pin, or a solder foot, which is not limited herein. Alternatively, the chip assembly 2 may be mounted on the surface of the substrate 11 by using an SMT process, which is not limited herein.
In one embodiment, as shown in fig. 1, the bonding pads 112 include VDD bonding pads 1121 and GND bonding pads 1122, and the VDD bonding pads 1121 and GND bonding pads 1122 are located on two sides of the chip component 2; the bonding pads 113 include a VDD bonding pad 1131 and a GND bonding pad 1132, and the VDD bonding pad 1131 and the GND bonding pad 1132 are spaced apart from each other on a side of the substrate 11 facing away from the housing 12.
In this embodiment, one end of the capacitor element 3 is connected to the VDD bonding pad 1121 and the VDD bonding pad 1131 through the conductive layer 13, and the other end of the capacitor element 3 is connected to the GND bonding pad 1122 and the GND bonding pad 1132 through the conductive layer 13.
It can be understood that, by providing the VDD bonding pad 1121 and the GND bonding pad 1122 on the substrate 11, the chip component 2 is respectively connected to the VDD bonding pad 1121 and the GND bonding pad 1122, so that the chip component 2 can implement the detection signal transmission through the VDD bonding pad 1121, and can implement the grounding through the GND bonding pad 1122 to protect the chip component 2.
In this embodiment, through set up VDD bonding pad 1131 and GND bonding pad 1132 on the side of substrate 11 back to the chamber 14, thereby make the package module 100 be connected with external equipment through VDD bonding pad 1131, so as to conveniently transmit the signal of chip component 2 to external equipment through VDD bonding pad 1131, and realize ground connection through GND bonding pad 1132, thereby make the package module 100 ground through GND bonding pad 1132, in order to protect package module 100, also conveniently unload electrostatic energy through GND bonding pad 1132.
It can be understood that one end of the capacitor element 3 in the inner cavity 111 is connected to the VDD bonding pad 1121 and the VDD bonding pad 1131 through the conductive layer 13, and the other end of the capacitor element 3 is connected to the GND bonding pad 1122 and the GND bonding pad 1132 through the conductive layer 13. Therefore, the capacitance component 3 introduces the static electricity entering the chip component 2 into the capacitance component 3 through the VDD routing pad 1121, and the grounding is realized through the GND soldering pad 1132, so that the electrostatic shielding effect is effectively realized.
In one embodiment, as shown in fig. 1, the capacitor assembly 3 includes a first capacitor 31 and a second capacitor 32 arranged at intervals; one end of the first capacitor 31 is connected to the VDD routing pad 1121 and the VDD bonding pad 1131 through the conductive layer 13, and the other end of the first capacitor 31 is connected to the GND routing pad 1122 and the GND bonding pad 1132 through the conductive layer 13; one end of the second capacitor 32 is connected to the VDD routing pad 1121 and the VDD bonding pad 1131 through the conductive layer 13, and the other end of the second capacitor 32 is connected to the GND routing pad 1122 and the GND bonding pad 1132 through the conductive layer 13.
It can be understood that, by disposing the first capacitor 31 and the second capacitor 32 in the inner cavity 111, the electrostatic shielding and eliminating effect of the capacitor assembly 3 is further improved, and the function of filtering and stabilizing voltage is effectively achieved. Alternatively, the first capacitor 31 and the second capacitor 32 of the capacitor assembly 3 may be embedded in the substrate 11 by an in-substrate-embedded-assembly technique.
In this embodiment, the first capacitor 31 and the second capacitor 32 are decoupling capacitors. Optionally, the capacitance value of the first capacitor 31 is 80nF to 120 nF. The capacitance value of the second capacitor 32 is 2 muF-6 muF. It can be understood that the capacitance of the first capacitor 31 is 80nF, 90nF, 100nF, 110nF, 120nF, etc., so that the electrostatic interference source in the range of 1-50 MHz can be effectively filtered out, and the power supply of the package module 100 is ensured to be stable, which is not limited herein. The second capacitor 32 has a capacitance of 2 μ F, 2.5 μ F, 3 μ F, 3.5 μ F, 4 μ F, 4.5 μ F, 5 μ F, 5.5 μ F, 6 μ F, etc., so as to effectively filter out the electrostatic interference source below 1MHz and ensure stable power supply of the package module 100.
In one embodiment, as shown in fig. 1, the first capacitor 31 and the second capacitor 32 are connected to the conductive layer 13 through solder balls 33. It can be understood that the solder balls 33 are respectively formed at two ends of the first capacitor 31 and the second capacitor 32 by a ball-mounting process, so that the conductive layer 13 is conductively connected with the first capacitor 31 and the second capacitor 32 through the solder balls 33, and the conductive performance is improved.
In one embodiment, the housing 12 is connected to the substrate 11 by solder paste, conductive paste or epoxy.
It is understood that the housing 12 may be made of metal, plastic or ceramic, but not limited thereto. When the housing 12 is made of metal, the housing 12 is connected to the substrate 11 through solder paste or conductive paste, so that electrical conduction and connection stability between the housing 12 and the substrate can be achieved. When the housing 12 is made of plastic or ceramic, the housing 12 is connected to the substrate 11 by epoxy glue, so that the connection between the housing 12 and the substrate 11 can be improved.
In one embodiment, as shown in FIG. 1, the housing 12 is a tubular structure with two open ends. In the present embodiment, one end of the housing 12 is connected to the substrate 11, so that the cavity 14 is formed to have an opening, such that the chip assembly 2 in the cavity 14 can detect the external environmental data through the opening of the cavity 14.
Certainly, in order to prevent substances such as dust or water vapor from entering the cavity 14 through the opening of the cavity 14 and affecting the performance of the chip assembly 2, a dust screen or a waterproof film may be disposed at the opening of the cavity 14 to prevent the substances such as dust or water vapor from entering the cavity 14.
In one embodiment, as shown in fig. 1, the outer wall of the housing 12 is recessed with a groove 121, and the groove 121 is disposed along the circumference of the housing 12. It can be understood that, by providing the groove 121 on the outer wall of the housing 12, the housing 12 can be conveniently taken and placed through the groove 121, and the installation convenience is improved. Alternatively, the housing 12 and the substrate 11 may be formed as an integral structure, so as to improve the structural strength of the housing 1 and simplify the processing steps of the housing 1.
In an embodiment, as shown in fig. 1, the package module 100 further includes a waterproof adhesive 4, and the waterproof adhesive 4 is filled in the cavity 14 and covers the chip assembly 2.
It can be understood that by arranging the waterproof glue 4, the waterproof glue 4 is filled in the accommodating cavity 14 and covers the chip assembly 2, so that the waterproof glue 4 is utilized to protect the chip assembly 2, and the chip assembly 2 is prevented from being affected by air, humidity and other external influences, and the performance of the chip assembly is further influenced. Alternatively, the waterproof glue 4 may be a molding glue or a protection glue, and the like, which is not limited herein.
In this embodiment, the waterproof adhesive 4 may be filled into the cavity 14 through the opening of the housing 12 by using a dispensing valve through a dispensing process, so as to improve convenience. Of course, in other embodiments, the housing 12 may also adopt a cover body or a cylindrical structure with an opening at one end, at this time, the cavity 14 formed by the housing 12 and the substrate 11 in an enclosing manner is a sealed cavity, and the sealed cavity may be filled with the waterproof glue 4 or not filled with the waterproof glue 4, which is specifically selected according to actual needs and is not limited herein.
In an embodiment, as shown in fig. 1, the chip assembly 2 includes an ASIC chip 21 and a MEMS chip 22, where the ASIC chip 21 is disposed on the bottom wall of the cavity 14 and electrically connected to the bonding pad 112; the MEMS chip 22 is disposed on a side of the ASIC chip 21 facing away from the bottom wall of the cavity 14, and is electrically connected to the ASIC chip 21.
In the present embodiment, the chip assembly 2 may be selected as a discrete chip, and the ASIC chip 21 and the MEMS chip 22 are stacked, so as to effectively reduce the volume of the package module 100 and achieve a miniaturized configuration of the package module 100.
It is understood that the MEMS chip 22 can convert external physical and chemical signals into electrical signals, and the ASIC chip 21 further processes and transmits the electrical signals generated by the MEMS chip 22 to the next stage of circuit. MEMS is an abbreviation of Micro-Electro-Mechanical System, known in Chinese as Micro-Electro-Mechanical systems. In short, MEMS chip 22 is a semiconductor technology used to fabricate an electromechanical system on a silicon wafer, which is further referred to as a mechanical system of micron or nanometer scale, and which can convert external physical and chemical signals into electrical signals. Such chips most commonly assume a sensing function. A sensory system somewhat similar to a human in the whole large information system, for example, a MEMS microphone chip is equivalent to a human ear, and can sense sound; the MEMS loudspeaker chip is equivalent to the mouth of a person and can make sound; the MEMS accelerometer, the gyroscope and the magnetic sensor chip are equivalent to the cerebellum of a human body and can sense the direction and the speed; the MEMS pressure chip is equivalent to human skin and can sense pressure; the MEMS chemical sensor is equivalent to the nasal cavity of a human body, and can sense the taste and the temperature and the humidity. The device formed by packaging a MEMS chip 22 and an application specific integrated circuit chip (ASIC chip) together is a MEMS sensor. That is, the package module 100 is a MEMS sensor.
In one embodiment, as shown in fig. 1, the ASIC chip 21 is electrically connected to the bonding pad 112 through a gold wire 23. It can be understood that the ASIC chip 21 is provided with a pad or a contact or a solder foot, so that the gold wire 23 can be connected with the pad or the contact or the solder foot of the ASIC chip 21 through a bonding process, thereby achieving electrical conduction, and the gold wire 23 is connected with the routing pad 112(VDD routing pad 1121 and VDD solder pad 1131) on the substrate 11 through a bonding process, thereby achieving electrical conduction.
In one embodiment, as shown in fig. 1, the MEMS chip 22 is electrically connected to the ASIC chip 21 by gold wires 23. It can be understood that the ASIC chip 21 is provided with a pad or a contact or a solder foot, and the MEMS chip 22 is provided with a pad or a contact or a solder foot, so that the pad or the contact or the solder foot on the ASIC chip 21 can be conveniently connected with the pad or the contact or the solder foot on the MEMS chip 22 through the gold wire 23, thereby realizing the electrical conduction between the ASIC chip 21 and the MEMS chip 22.
Optionally, as shown in fig. 1, the ASIC chip 21 is connected to the bottom wall of the cavity 14 through an adhesive 24, so that the connection stability between the ASIC chip 21 and the substrate 11 can be improved. The MEMS chip 22 is connected to the ASIC chip 21 through an adhesive 24, so that the connection stability between the MEMS chip 22 and the ASIC chip 21 can be improved.
The package module 100 of the present invention utilizes a Substrate Embedded component Technology (Embedded Components in Substrate Technology), 2 decoupling capacitors (a first capacitor 31 and a second capacitor 32) are Embedded in the Substrate 11, one end of each of the 2 decoupling capacitors is connected to the VDD routing pad 1121 and the VDD bonding pad 1131 on the Substrate 11, the other end of each of the 2 decoupling capacitors is connected to the GND routing pad 1122 and the GND bonding pad 1132 on the Substrate 11, and the 2 decoupling capacitors are respectively connected to the copper foil routing (conductive layer 13) in the Substrate 11 through the solder balls 33, so as to realize the electrical connection between the two ends of the first capacitor 31 and the second capacitor 32. So set up, can just by the direct effectual elimination of decoupling capacitance (first electric capacity 31 and second electric capacity 32) in the base plate 11 before static is leading-in gets into chip module 2 by shell 12, can effectively avoid static to chip module 2's influence, improve customer's use experience greatly. The package module 100 of the present invention can increase the antistatic ability of the product by more than 2 times.
The invention further provides an electronic device, which includes a device housing and the encapsulation module 100, where the encapsulation module 100 is disposed on the device housing. The specific structure of the package module 100 refers to the foregoing embodiments, and since the electronic device adopts all the technical solutions of all the foregoing embodiments, at least all the beneficial effects brought by the technical solutions of the foregoing embodiments are achieved, and no further description is given here.
The above description is only an alternative embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. An encapsulated module, comprising:
the welding device comprises a shell, a welding piece and a welding piece, wherein the shell is provided with a containing cavity and an inner cavity which are arranged at intervals, the inner wall of the containing cavity is provided with a routing bonding pad, and the outer wall of the shell is provided with a welding pad;
the chip assembly is arranged in the cavity and is arranged at intervals with the routing bonding pad, and the chip assembly is electrically connected with the routing bonding pad; and
the capacitor assembly is arranged in the inner cavity and is electrically connected with the routing bonding pad and the welding bonding pad.
2. The encapsulation module of claim 1, wherein the housing comprises:
the inner cavity is arranged in the substrate, and the routing bonding pad and the welding bonding pad are arranged on two opposite sides of the substrate;
the shell is arranged on the substrate and forms the containing cavity with the substrate in an enclosing mode, and the routing bonding pad is located in the containing cavity; and
the conducting layer is arranged in the inner cavity, and the capacitor assembly is electrically connected with the routing bonding pad and the welding bonding pad through the conducting layer.
3. The package module of claim 2, wherein the wire bond pads comprise a VDD wire bond pad and a GND wire bond pad, the VDD wire bond pad and the GND wire bond pad being located on two sides of the chip assembly;
the welding pads comprise a VDD welding pad and a GND welding pad, and the VDD welding pad and the GND welding pad are arranged on one side, back to the shell, of the substrate at intervals;
one end of the capacitor assembly is connected with the VDD routing bonding pad and the VDD welding bonding pad through the conducting layer, and the other end of the capacitor assembly is connected with the GND routing bonding pad and the GND welding bonding pad through the conducting layer.
4. The package module of claim 3, wherein the capacitor assembly comprises a first capacitor and a second capacitor spaced apart from each other;
one end of the first capacitor is connected with the VDD routing bonding pad and the VDD welding bonding pad through the conducting layer, and the other end of the first capacitor is connected with the GND routing bonding pad and the GND welding bonding pad through the conducting layer;
one end of the second capacitor is connected with the VDD routing pad and the VDD welding pad through the conducting layer, and the other end of the second capacitor is connected with the GND routing pad and the GND welding pad through the conducting layer.
5. The package module of claim 4, wherein the first capacitor and the second capacitor are decoupling capacitors;
and/or the capacitance value of the first capacitor is 80 nF-120 nF;
and/or the capacitance value of the second capacitor is 2-6 muF;
and/or the first capacitor and the second capacitor are connected with the conducting layer through solder balls;
and/or the first capacitor and the second capacitor are embedded in the substrate through a substrate embedded component technology.
6. The package module of claim 2, wherein the housing is coupled to the substrate by solder paste, conductive paste, or epoxy paste;
and/or the shell is of a cylindrical structure with two open ends;
and/or, the outer wall of shell is provided with the recess in a concave manner, the recess is arranged along the circumference of shell.
7. The package module according to any one of claims 1 to 6, further comprising a waterproof adhesive, wherein the waterproof adhesive is filled in the cavity and covers the chip assembly.
8. The package module of any one of claims 1 to 6, wherein the chip assembly comprises:
the ASIC chip is arranged on the bottom wall of the containing cavity and is electrically connected with the routing bonding pad; and
the MEMS chip is arranged on one side, back to the bottom wall of the containing cavity, of the ASIC chip and is electrically connected with the ASIC chip.
9. The package module of claim 8, wherein the ASIC chip is electrically connected to the wire bond pad by gold wire;
and/or the MEMS chip is electrically connected with the ASIC chip through a gold wire;
and/or the ASIC chip is connected with the bottom wall of the cavity through adhesive;
and/or the MEMS chip is connected with the ASIC chip through adhesive.
10. An electronic device comprising a device housing and the package module of any one of claims 1-9, wherein the package module is disposed on the device housing.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110237574.0A CN113053867B (en) | 2021-03-09 | 2021-03-09 | Encapsulation module and electronic equipment |
| PCT/CN2021/143211 WO2022188523A1 (en) | 2021-03-09 | 2021-12-30 | Packaging module and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110237574.0A CN113053867B (en) | 2021-03-09 | 2021-03-09 | Encapsulation module and electronic equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113053867A true CN113053867A (en) | 2021-06-29 |
| CN113053867B CN113053867B (en) | 2022-10-18 |
Family
ID=76509822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110237574.0A Active CN113053867B (en) | 2021-03-09 | 2021-03-09 | Encapsulation module and electronic equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN113053867B (en) |
| WO (1) | WO2022188523A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022188523A1 (en) * | 2021-03-09 | 2022-09-15 | 歌尔微电子股份有限公司 | Packaging module and electronic device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1321411A (en) * | 1999-09-02 | 2001-11-07 | 伊比登株式会社 | Printed wiring board and method of producing same |
| US20060175083A1 (en) * | 2005-02-09 | 2006-08-10 | Masaki Muramatsu | Wiring board and capacitor to be built into wiring board |
| CN1925722A (en) * | 2005-09-01 | 2007-03-07 | 日本特殊陶业株式会社 | Wiring board construction including embedded ceramic capacitors(s) |
| CN210180588U (en) * | 2019-08-05 | 2020-03-24 | 歌尔科技有限公司 | Waterproof barometer sensor, waterproof barometer module and electronic equipment |
| CN211089966U (en) * | 2019-10-29 | 2020-07-24 | 深圳市三诺数字科技有限公司 | MEMS microphone and electronic equipment |
| CN211855674U (en) * | 2020-04-23 | 2020-11-03 | 歌尔微电子有限公司 | Air pressure sensor and electronic device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN209161474U (en) * | 2018-12-07 | 2019-07-26 | 歌尔科技有限公司 | Combination sensor |
| CN209017322U (en) * | 2018-12-24 | 2019-06-21 | 歌尔科技有限公司 | Encapsulating structure, microphone and the electronic equipment of chip |
| US20210066265A1 (en) * | 2019-08-28 | 2021-03-04 | Intel Corporation | Tunable capacitor arrangements in integrated circuit package substrates |
| CN111115552B (en) * | 2019-12-13 | 2023-04-14 | 北京航天控制仪器研究所 | MEMS sensor hybrid integrated packaging structure and packaging method |
| CN113053867B (en) * | 2021-03-09 | 2022-10-18 | 歌尔微电子股份有限公司 | Encapsulation module and electronic equipment |
-
2021
- 2021-03-09 CN CN202110237574.0A patent/CN113053867B/en active Active
- 2021-12-30 WO PCT/CN2021/143211 patent/WO2022188523A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1321411A (en) * | 1999-09-02 | 2001-11-07 | 伊比登株式会社 | Printed wiring board and method of producing same |
| US20060175083A1 (en) * | 2005-02-09 | 2006-08-10 | Masaki Muramatsu | Wiring board and capacitor to be built into wiring board |
| CN1925722A (en) * | 2005-09-01 | 2007-03-07 | 日本特殊陶业株式会社 | Wiring board construction including embedded ceramic capacitors(s) |
| CN210180588U (en) * | 2019-08-05 | 2020-03-24 | 歌尔科技有限公司 | Waterproof barometer sensor, waterproof barometer module and electronic equipment |
| CN211089966U (en) * | 2019-10-29 | 2020-07-24 | 深圳市三诺数字科技有限公司 | MEMS microphone and electronic equipment |
| CN211855674U (en) * | 2020-04-23 | 2020-11-03 | 歌尔微电子有限公司 | Air pressure sensor and electronic device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022188523A1 (en) * | 2021-03-09 | 2022-09-15 | 歌尔微电子股份有限公司 | Packaging module and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113053867B (en) | 2022-10-18 |
| WO2022188523A1 (en) | 2022-09-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6781231B2 (en) | Microelectromechanical system package with environmental and interference shield | |
| EP2352311B1 (en) | Microphone | |
| PL209935B1 (en) | Silicon−based sensor system | |
| US7426868B2 (en) | Sensor module | |
| US7763972B2 (en) | Stacked package structure for reducing package volume of an acoustic micro-sensor | |
| US20140090485A1 (en) | MEMS Pressure Sensor Assembly | |
| CN110631759A (en) | Differential pressure sensor packaging structure and electronic equipment | |
| JP4892781B2 (en) | Semiconductor physical quantity sensor | |
| US20080236307A1 (en) | Sensor apparatus | |
| KR100487038B1 (en) | Semiconductor device | |
| US20200266151A1 (en) | Electronic package structure | |
| TW201044280A (en) | Chip card with a measuring circuit that has a sensor, and method of making the chip card | |
| CN113053867B (en) | Encapsulation module and electronic equipment | |
| CN109311657B (en) | MEMS sensor device package with side port | |
| CN216491057U (en) | Microphone structure and electronic equipment | |
| JP2011185704A (en) | Humidity sensor module | |
| CN112954559B (en) | Microphone structure and electronic equipment | |
| CN212393002U (en) | Micro-electromechanical sensor connecting structure | |
| CN112158791B (en) | Sensor packaging structure, packaging method thereof and electronic equipment | |
| CN113551707A (en) | Combined sensor and electronic device | |
| CN113229534A (en) | Waterproof and oil-proof air pressure sensor and electronic cigarette | |
| CN210156374U (en) | System-in-package structure and electronic device | |
| CN114339560B (en) | Miniature microphone and electronic equipment | |
| CN211061108U (en) | Differential pressure sensor packaging structure and electronic equipment | |
| CN217103070U (en) | Sensor chip packaging structure and chip packaging module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |