CN113046735A - Heterojunction solar cell and chemical nickel plating method for silicon device - Google Patents
Heterojunction solar cell and chemical nickel plating method for silicon device Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1875—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment only one step pretreatment
- C23C18/1879—Use of metal, e.g. activation, sensitisation with noble metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
- C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention belongs to the technical field of chemical nickel plating, and particularly relates to a chemical nickel plating method for a heterojunction solar cell and a silicon device. The chemical nickel plating method for the heterojunction solar cell and the silicon device comprises the following steps: s1, soaking the workpiece to be plated in an activating solution, and activating to obtain an activated workpiece to be plated; s2, taking out the activated workpiece to be plated obtained in the step S1, washing the workpiece to be plated with distilled water, immersing the activated workpiece to be plated into a reducing agent for reduction treatment, washing with water, and drying to obtain a dried workpiece to be plated; s3, soaking the dried piece to be plated obtained in the step S2 in nickel plating solution, and treating at the temperature of 30-40 ℃ for 5-8 min to obtain a nickel-plated piece; s4, cleaning the nickel-plated piece obtained in the step S3 by distilled water and drying. The method of the invention not only can provide good activation effect, but also can enhance the binding force between the obtained nickel plating layer and the base material, and the chemical plating layer has uniform thickness, good compactness, thicker plating layer and good quality.
Description
Technical Field
The invention belongs to the technical field of chemical nickel plating, and particularly relates to a chemical nickel plating method for a heterojunction solar cell and a silicon device.
Background
A solar cell may also be referred to as a photovoltaic cell, which is a novel power generation technology for directly converting solar radiation into electric energy by using a photovoltaic effect, and is considered as one of the most promising renewable energy technologies due to its advantages of sufficient resources, cleanliness, safety, long service life, and the like. The crystalline silicon solar cell includes a single crystalline silicon solar cell, a polycrystalline silicon solar cell, a high efficiency crystalline silicon solar cell, and the like. The single crystal silicon solar cell has high conversion efficiency and mature technology, but the manufacturing cost of the cell is high due to the fact that a high-purity single crystal silicon rod is required to be used as a raw material, and the cell is difficult to popularize and apply on a large scale. The manufacturing process of the polycrystalline silicon solar cell is similar to that of the monocrystalline silicon solar cell, and the manufacturing cost of the polycrystalline silicon solar cell is lower than that of the monocrystalline silicon solar cell. However, the photoelectric conversion efficiency of the polycrystalline silicon solar cell is lower than that of the single crystalline silicon solar cell, and the service life of the polycrystalline silicon solar cell is also shorter than that of the single crystalline silicon solar cell.
The heterojunction solar cell is a novel efficient cell technology, integrates the advantages of the monocrystalline silicon solar cell and the amorphous silicon solar cell, and has the characteristics of simple structure, low temperature of the preparation process, higher conversion efficiency, good high-temperature characteristic and the like, so that the heterojunction solar cell has great market potential. The main structure of the heterojunction solar cell is as follows: depositing a thin film intrinsic amorphous silicon layer and an amorphous silicon emitter layer on the light receiving surface of the silicon substrate in sequence to form a heterojunction with a thin film intrinsic amorphous silicon interlayer; and depositing a transparent conductive oxide layer on the amorphous silicon thin layer with the two doped surfaces by a sputtering method, and finally forming a grid-shaped metal electrode on the transparent conductive oxide layer. Forming a grid-shaped metal electrode as a key step for manufacturing the heterojunction solar cell, wherein the conventional method comprises the following steps: and manufacturing a first copper lamination of the metal grid line as a main conducting layer of the metal grid line, and manufacturing a second nickel lamination as a welding assistant layer of the metal grid line. However, the existing chemical nickel plating method for the heterojunction solar cell and the silicon device has the problems that an activating agent used in the activation stage of a piece to be plated is easy to have an unobvious activation effect, the bonding force between a plating layer after nickel plating and a base material is poor, the thickness of a chemical plating layer is not uniform, the plating layer is thin, the quality of the plating layer is not ideal and the like.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a heterojunction solar cell and a silicon device chemical nickel plating method. The method of the invention can provide good activation effect, can also enhance the binding force between the obtained nickel coating and the base material, and has the advantages of uniform thickness of the chemical plating layer, good compactness of the plating layer, thicker plating layer and good quality of the plating layer.
The technical scheme of the invention is as follows:
the chemical nickel plating method for the heterojunction solar cell and the silicon device comprises the following steps:
s1, soaking the workpiece to be plated in an activation solution for activation at 28-35 ℃ for 7-12 min to obtain an activated workpiece to be plated;
s2, taking out the activated workpiece to be plated obtained in the step S1, washing the workpiece to be plated with distilled water, immersing the activated workpiece to be plated into a reducing agent for reduction treatment, washing with water, and drying to obtain a dried workpiece to be plated;
s3, soaking the dried piece to be plated obtained in the step S2 in nickel plating solution, and treating at the temperature of 30-40 ℃ for 5-8 min to obtain a nickel-plated piece;
s4, cleaning the nickel-plated piece obtained in the step S3 by distilled water and drying.
Further, the activating solution comprises the following components in percentage by weight: the content of palladium chloride is 0.03-0.18 g/L, the content of stannous chloride is 0.05-0.4 g/L, the content of hydrochloric acid with the concentration of 37% is 7-12 mL/L, the content of boric acid is 1-3 g/L, and the content of wetting agent is 0.1-1 g/L.
Further, the activating solution comprises the following components in percentage by weight: the content of palladium chloride is 0.12g/L, the content of stannous chloride is 0.26g/L, the content of hydrochloric acid with the concentration of 37% is 9mL/L, the content of boric acid is 2g/L, and the content of wetting agent is 0.4 g/L.
Further, the wetting agent is prepared from ethylene glycol, propylene glycol alginate and alkyl glycoside according to a mass ratio of 10-13: 4-6: 1.
Further, the wetting agent is prepared from ethylene glycol, propylene glycol alginate and alkyl glycoside according to the mass ratio of 12: 5: 1.
Further, the nickel plating solution comprises the following components in percentage by weight: 25-30 g/L of nickel sulfamate, 13-16 g/L of potassium hypophosphite, 4-7 g/L of complexing agent and 1-3 g/L of stabilizer.
Further, the nickel plating solution comprises the following components in percentage by weight: 28g/L of nickel sulfamate, 15g/L of potassium hypophosphite, 6g/L of complexing agent and 2g/L of stabilizing agent.
Further, the complexing agent is prepared from sodium gluconate and sodium phytate in a mass ratio of 12-15: 1 to 3.
Further, the stabilizer is prepared from polyvinyl alcohol and locust bean gum according to a mass ratio of 5-8: 1 to 2.
Further, the stabilizer is prepared from polyvinyl alcohol and locust bean gum according to a mass ratio of 7: 2.
In the invention, the wetting agent which is added into the activating solution and consists of ethylene glycol, propylene glycol alginate and alkyl glycoside according to a certain mass ratio not only can play a role of fully wetting the workpiece to be plated, but also can provide good conditions for activation and enhance the activation effect. The stabilizing agent which is added in the nickel plating solution and consists of polyvinyl alcohol and locust bean gum according to a certain mass ratio can enhance the stability of the nickel plating solution, also can ensure that the deposition speed is uniform, the uniformity of a plated film is enhanced, and the compactness of the plated layer is enhanced.
The complexing agent is added into the nickel plating solution and consists of sodium gluconate and sodium phytate according to a certain mass ratio, and the sodium gluconate and the sodium phytate act synergistically, so that the plating layer is more compact and delicate, the deposition rate of the plating solution can be maintained in a proper range, deposited particles are uniformly distributed on the surface of a piece to be plated, and the thickness of the plating layer on the surface of the piece to be plated is uniformly distributed.
Compared with the prior art, the invention has the following advantages:
(1) the heterojunction solar cell and the chemical nickel plating method for the silicon device can provide good activation effect.
(2) The nickel-plated layer obtained by the chemical nickel-plating method for the heterojunction solar cell and the silicon device has strong binding force with the base material, uniform thickness of the chemical plating layer, good compactness of the plating layer, thicker plating layer and good quality of the plating layer.
Detailed Description
The present invention is further described in the following description of the specific embodiments, which is not intended to limit the invention, but various modifications and improvements can be made by those skilled in the art according to the basic idea of the invention, within the scope of the invention, as long as they do not depart from the basic idea of the invention.
In the present invention, the starting materials are commercially available unless otherwise specified. For example, polyvinyl alcohol is available from Shanghai Binsheng chemical science and technology Limited, Cat #: BP-24; locust bean gum is available from Shanghai Rough Biotech limited, cat #: 8268; alkyl glycosides are available from wang chemical ltd, guang zhou flower, model: APG 08-14.
Example 1 heterojunction solar cell and chemical nickel plating method for silicon device
The chemical nickel plating method for the heterojunction solar cell and the silicon device comprises the following steps:
s1, soaking the workpiece to be plated in an activating solution, and activating at 28 ℃ for 7min to obtain an activated workpiece to be plated;
s2, taking out the activated workpiece to be plated obtained in the step S1, washing the workpiece with distilled water, immersing the activated workpiece to be plated into a sodium hypophosphite aqueous solution with the concentration of 20g/L for reduction treatment for 2min, washing with water, and drying to obtain a dried workpiece to be plated;
s3, soaking the dried piece to be plated obtained in the step S2 in nickel plating solution, and treating at 30 ℃ for 5min to obtain a nickel-plated piece;
s4, cleaning the nickel-plated piece obtained in the step S3 with distilled water and drying;
the activating solution comprises the following components in percentage by weight: the content of palladium chloride is 0.03g/L, the content of stannous chloride is 0.05g/L, the content of 37% hydrochloric acid is 7mL/L, the content of boric acid is 1g/L, and the content of wetting agent is 0.1 g/L; the wetting agent is prepared from ethylene glycol, propylene glycol alginate and alkyl glycoside according to a mass ratio of 10: 6: 1.
The preparation method of the activating solution comprises the following steps:
diluting hydrochloric acid with the concentration of 37%, adding palladium chloride and stannous chloride into the diluted hydrochloric acid for dissolving, adding boric acid, fully stirring, adding a wetting agent, and fully and uniformly mixing to obtain the product.
The nickel plating solution comprises the following components in percentage by weight: 25g/L of nickel sulfamate, 13g/L of potassium hypophosphite, 4g/L of complexing agent and 1g/L of stabilizing agent; the complexing agent is prepared from sodium gluconate and sodium phytate in a mass ratio of 12: 3, preparing a composition; the stabilizer is prepared from polyvinyl alcohol and locust bean gum according to a mass ratio of 5: 2.
The preparation method of the nickel plating solution comprises the following steps:
firstly, respectively dissolving nickel sulfamate, potassium hypophosphite, a complexing agent and a stabilizer in water to prepare respective aqueous solutions, then mixing the nickel sulfamate aqueous solution and the complexing agent aqueous solution, adding the potassium hypophosphite aqueous solution and the stabilizer aqueous solution after uniformly mixing, and uniformly mixing to obtain the product.
Example 2 heterojunction solar cell and chemical nickel plating method for silicon device
The chemical nickel plating method for the heterojunction solar cell and the silicon device comprises the following steps:
s1, soaking the workpiece to be plated in an activating solution, and activating at 35 ℃ for 12min to obtain an activated workpiece to be plated;
s2, taking out the activated workpiece to be plated obtained in the step S1, washing the workpiece with distilled water, immersing the activated workpiece to be plated into a sodium hypophosphite aqueous solution with the concentration of 30g/L for reduction treatment for 4min, washing with water, and drying to obtain a dried workpiece to be plated;
s3, soaking the dried piece to be plated obtained in the step S2 in nickel plating solution, and treating at 40 ℃ for 8min to obtain a nickel-plated piece;
s4, cleaning the nickel-plated piece obtained in the step S3 with distilled water and drying;
the activating solution comprises the following components in percentage by weight: the content of palladium chloride is 0.18g/L, the content of stannous chloride is 0.4g/L, the content of hydrochloric acid with the concentration of 37% is 12mL/L, the content of boric acid is 3g/L, and the content of wetting agent is 1 g/L; the wetting agent is prepared from ethylene glycol, propylene glycol alginate and alkyl glycoside according to a mass ratio of 13: 4: 1.
The nickel plating solution comprises the following components in percentage by weight: 30g/L of nickel sulfamate, 16g/L of potassium hypophosphite, 7g/L of complexing agent and 3g/L of stabilizing agent; the complexing agent is prepared from sodium gluconate and sodium phytate according to a mass ratio of 15: 1, preparing a composition; the stabilizer is prepared from polyvinyl alcohol and locust bean gum according to a mass ratio of 8: 1.
The preparation methods of the activating solution and the nickel plating solution are similar to those of the embodiment 1.
Example 3 heterojunction solar cell and silicon device electroless nickel plating method
The chemical nickel plating method for the heterojunction solar cell and the silicon device comprises the following steps:
s1, soaking the workpiece to be plated in an activation solution for activation, wherein the activation temperature is 30 ℃, and the activation time is 9min, so as to obtain the activated workpiece to be plated;
s2, taking out the activated workpiece to be plated obtained in the step S1, washing the workpiece with distilled water, immersing the activated workpiece to be plated into a 25g/L sodium hypophosphite aqueous solution for reduction treatment for 3min, washing with water, and drying to obtain a dried workpiece to be plated;
s3, soaking the dried piece to be plated obtained in the step S2 in a nickel plating solution, and treating for 7min at the temperature of 35 ℃ to obtain a nickel-plated piece;
s4, cleaning the nickel-plated piece obtained in the step S3 by distilled water and drying.
The activating solution comprises the following components in percentage by weight: the content of palladium chloride is 0.12g/L, the content of stannous chloride is 0.26g/L, the content of hydrochloric acid with the concentration of 37% is 9mL/L, the content of boric acid is 2g/L, and the content of wetting agent is 0.4 g/L; the wetting agent is prepared from ethylene glycol, propylene glycol alginate and alkyl glycoside according to a mass ratio of 12: 5: 1.
The nickel plating solution comprises the following components in percentage by weight: 28g/L of nickel sulfamate, 15g/L of potassium hypophosphite, 6g/L of complexing agent and 2g/L of stabilizing agent; the complexing agent is prepared from sodium gluconate and sodium phytate in a mass ratio of 13: 2, preparing a composition; the stabilizer is prepared from polyvinyl alcohol and locust bean gum according to a mass ratio of 7: 2.
The preparation methods of the activating solution and the nickel plating solution are similar to those of the embodiment 1.
Comparative example 1 heterojunction solar cell and chemical nickel plating method for silicon device
The chemical nickel plating method for the heterojunction solar cell and the silicon device comprises the following steps:
s1, soaking the workpiece to be plated in an activation solution for activation, wherein the activation temperature is 30 ℃, and the activation time is 9min, so as to obtain the activated workpiece to be plated;
s2, taking out the activated workpiece to be plated obtained in the step S1, washing the workpiece with distilled water, immersing the activated workpiece to be plated into a 25g/L sodium hypophosphite aqueous solution for reduction treatment for 3min, washing with water, and drying to obtain a dried workpiece to be plated;
s3, soaking the dried piece to be plated obtained in the step S2 in a nickel plating solution, and treating for 7min at the temperature of 35 ℃ to obtain a nickel-plated piece;
s4, cleaning the nickel-plated piece obtained in the step S3 by distilled water and drying.
The activating solution comprises the following components in percentage by weight: the content of palladium chloride is 0.12g/L, the content of stannous chloride is 0.26g/L, the content of hydrochloric acid with the concentration of 37% is 9mL/L, the content of boric acid is 2g/L, and the content of wetting agent is 0.4 g/L; the wetting agent is prepared from ethylene glycol and propylene glycol alginate in a mass ratio of 12: 5.
The nickel plating solution comprises the following components in percentage by weight: 28g/L of nickel sulfamate, 15g/L of potassium hypophosphite, 6g/L of complexing agent and 2g/L of stabilizing agent; the complexing agent is prepared from sodium gluconate and sodium phytate in a mass ratio of 13: 2, preparing a composition; the stabilizer is prepared from polyvinyl alcohol and locust bean gum according to a mass ratio of 7: 2.
The preparation methods of the activating solution and the nickel plating solution are similar to those of the embodiment 1.
The difference from the example 3 is that the wetting agent in the activating solution is prepared from glycol alginate and propylene glycol alginate in a mass ratio of 12: 5.
Comparative example 2 heterojunction solar cell and chemical nickel plating method for silicon device
The chemical nickel plating method for the heterojunction solar cell and the silicon device comprises the following steps:
s1, soaking the workpiece to be plated in an activation solution for activation, wherein the activation temperature is 30 ℃, and the activation time is 9min, so as to obtain the activated workpiece to be plated;
s2, taking out the activated workpiece to be plated obtained in the step S1, washing the workpiece with distilled water, immersing the activated workpiece to be plated into a 25g/L sodium hypophosphite aqueous solution for reduction treatment for 3min, washing with water, and drying to obtain a dried workpiece to be plated;
s3, soaking the dried piece to be plated obtained in the step S2 in a nickel plating solution, and treating for 7min at the temperature of 35 ℃ to obtain a nickel-plated piece;
s4, cleaning the nickel-plated piece obtained in the step S3 by distilled water and drying.
The activating solution comprises the following components in percentage by weight: the content of palladium chloride is 0.12g/L, the content of stannous chloride is 0.26g/L, the content of hydrochloric acid with the concentration of 37% is 9mL/L, the content of boric acid is 2g/L, and the content of wetting agent is 0.4 g/L; the wetting agent is ethylene glycol.
The nickel plating solution comprises the following components in percentage by weight: 28g/L of nickel sulfamate, 15g/L of potassium hypophosphite, 6g/L of complexing agent and 2g/L of stabilizing agent; the complexing agent is prepared from sodium gluconate and sodium phytate in a mass ratio of 13: 2, preparing a composition; the stabilizer is prepared from polyvinyl alcohol and locust bean gum according to a mass ratio of 7: 2.
The preparation methods of the activating solution and the nickel plating solution are similar to those of the embodiment 1.
The difference from the example 3 is that the wetting agent in the activating solution is ethylene glycol.
Comparative example 3 heterojunction solar cell and chemical nickel plating method for silicon device
The chemical nickel plating method for the heterojunction solar cell and the silicon device comprises the following steps:
s1, soaking the workpiece to be plated in an activation solution for activation, wherein the activation temperature is 30 ℃, and the activation time is 9min, so as to obtain the activated workpiece to be plated;
s2, taking out the activated workpiece to be plated obtained in the step S1, washing the workpiece with distilled water, immersing the activated workpiece to be plated into a 25g/L sodium hypophosphite aqueous solution for reduction treatment for 3min, washing with water, and drying to obtain a dried workpiece to be plated;
s3, soaking the dried piece to be plated obtained in the step S2 in a nickel plating solution, and treating for 7min at the temperature of 35 ℃ to obtain a nickel-plated piece;
s4, cleaning the nickel-plated piece obtained in the step S3 by distilled water and drying.
The activating solution comprises the following components in percentage by weight: the content of palladium chloride is 0.12g/L, the content of stannous chloride is 0.26g/L, the content of hydrochloric acid with the concentration of 37% is 9mL/L, the content of boric acid is 2g/L, and the content of wetting agent is 0.4 g/L; the wetting agent is prepared from ethylene glycol, propylene glycol alginate and alkyl glycoside according to a mass ratio of 12: 5: 1.
The nickel plating solution comprises the following components in percentage by weight: 28g/L of nickel sulfamate, 15g/L of potassium hypophosphite, 6g/L of complexing agent and 2g/L of stabilizing agent; the complexing agent is prepared from sodium gluconate and sodium phytate in a mass ratio of 13: 2, preparing a composition; the stabilizer is prepared from polyvinyl alcohol and locust bean gum according to a mass ratio of 1: 1.
The preparation methods of the activating solution and the nickel plating solution are similar to those of the embodiment 1.
The difference from the example 3 is that the stabilizer is prepared from polyvinyl alcohol and locust bean gum according to the mass ratio of 1: 1.
Comparative example 4 heterojunction solar cell and chemical nickel plating method for silicon device
The chemical nickel plating method for the heterojunction solar cell and the silicon device comprises the following steps:
s1, soaking the workpiece to be plated in an activation solution for activation, wherein the activation temperature is 30 ℃, and the activation time is 9min, so as to obtain the activated workpiece to be plated;
s2, taking out the activated workpiece to be plated obtained in the step S1, washing the workpiece with distilled water, immersing the activated workpiece to be plated into a 25g/L sodium hypophosphite aqueous solution for reduction treatment for 3min, washing with water, and drying to obtain a dried workpiece to be plated;
s3, soaking the dried piece to be plated obtained in the step S2 in a nickel plating solution, and treating for 7min at the temperature of 35 ℃ to obtain a nickel-plated piece;
s4, cleaning the nickel-plated piece obtained in the step S3 by distilled water and drying.
The activating solution comprises the following components in percentage by weight: the content of palladium chloride is 0.12g/L, the content of stannous chloride is 0.26g/L, the content of hydrochloric acid with the concentration of 37% is 9mL/L, the content of boric acid is 2g/L, and the content of wetting agent is 0.4 g/L; the wetting agent is prepared from ethylene glycol, propylene glycol alginate and alkyl glycoside according to a mass ratio of 12: 5: 1.
The nickel plating solution comprises the following components in percentage by weight: 28g/L of nickel sulfamate, 15g/L of potassium hypophosphite, 6g/L of complexing agent and 2g/L of stabilizing agent; the complexing agent is prepared from sodium gluconate and sodium phytate in a mass ratio of 13: 2, preparing a composition; the stabilizer is polyvinyl alcohol.
The preparation methods of the activating solution and the nickel plating solution are similar to those of the embodiment 1.
The difference from example 3 is that the stabilizer is polyvinyl alcohol.
Comparative example 5 heterojunction solar cell and chemical nickel plating method for silicon device
The chemical nickel plating method for the heterojunction solar cell and the silicon device comprises the following steps:
s1, soaking the workpiece to be plated in an activation solution for activation, wherein the activation temperature is 30 ℃, and the activation time is 9min, so as to obtain the activated workpiece to be plated;
s2, taking out the activated workpiece to be plated obtained in the step S1, washing the workpiece with distilled water, immersing the activated workpiece to be plated into a 25g/L sodium hypophosphite aqueous solution for reduction treatment for 3min, washing with water, and drying to obtain a dried workpiece to be plated;
s3, soaking the dried piece to be plated obtained in the step S2 in a nickel plating solution, and treating for 7min at the temperature of 35 ℃ to obtain a nickel-plated piece;
s4, cleaning the nickel-plated piece obtained in the step S3 by distilled water and drying.
The activating solution comprises the following components in percentage by weight: the content of palladium chloride is 0.12g/L, the content of stannous chloride is 0.26g/L, the content of hydrochloric acid with the concentration of 37% is 9mL/L, the content of boric acid is 2g/L, and the content of wetting agent is 0.4 g/L; the wetting agent is prepared from ethylene glycol, propylene glycol alginate and alkyl glycoside according to a mass ratio of 12: 5: 1.
The nickel plating solution comprises the following components in percentage by weight: 28g/L of nickel sulfamate, 15g/L of potassium hypophosphite, 6g/L of complexing agent and 2g/L of stabilizing agent; the complexing agent is sodium gluconate; the stabilizer is prepared from polyvinyl alcohol and locust bean gum according to a mass ratio of 7: 2.
The preparation methods of the activating solution and the nickel plating solution are similar to those of the embodiment 1.
The difference from example 3 is that the complexing agent is sodium gluconate.
Test example I, coating thickness test
A film thickness tester is adopted to measure the plating thickness of a plated piece sample obtained by respectively adopting the chemical nickel plating methods of examples 1-3 of the invention and comparative examples 1-2, wherein a copper layer with the thickness not more than 1 mu m is deposited by a PVD physical vapor deposition method, and then the circular silicon chip with thickened electroplated copper is used as a piece to be plated. The test results are shown in table 1.
Table 1: coating thickness test results
As can be seen from table 1, the coating obtained after nickel plating by using the chemical nickel plating method for the heterojunction solar cell and the silicon device provided by the invention is thicker, which indicates that good activation effect can be provided by using the method of the invention, and the coating obtained after nickel plating by using the chemical nickel plating method for the heterojunction solar cell and the silicon device provided by the invention is thicker than that of comparative examples 1-2, which indicates that more excellent activation effect can be provided by using the method of the invention.
Test example II coating adhesion Strength
1. Test samples: a copper layer with the thickness not more than 1 mu m is deposited by a PVD physical vapor deposition method, then a round silicon wafer with thickened electroplated copper is used as a piece to be plated, and the plated pieces are respectively obtained by adopting the chemical nickel plating methods of the embodiment 3 and the comparative example 5.
2. The test method comprises the following steps: the plating adhesion strength of the plated article obtained was measured by the following method.
The adhesive strength of the plating layer is detected by adopting a check method, the check and judgment of the check method are expressed by grades,
level 0: the edges of the cuts were completely smooth without any flaking of the grid edges.
Level 1: the small pieces are peeled off at the intersection of the cuts, and the actual damage in the grid scribing area is less than or equal to 5 percent.
And 2, stage: the edges and/or intersections of the cuts are peeled off, and the area of the cuts is more than 5% -15%.
And 3, level: and partial peeling or whole peeling is carried out along the edge of the cut, or partial lattices are peeled off by whole pieces. The area of stripping exceeds 15-35%.
4, level: the edge of the cut is largely peeled off or some squares are partially or completely peeled off, and the area of the cut is more than 35-65% of the area of the grid-cutting area.
And 5, stage: there is a patch of paint falling off at the edge and intersection of the score line, with a total area of fall off greater than 65%. 3. And (3) test results:
the test results are shown in table 2.
Table 2: test results of plating adhesion strength
| Item | Example 3 | Comparative example 5 |
| Test result for testing adhesion strength of plating layer by adopting Baige method | Level 0 | Stage 2 |
As can be seen from Table 2, the coating obtained by nickel plating by the chemical nickel plating method for the heterojunction solar cell and the silicon device provided by the invention is 0 grade; the results of the adhesion strength test of comparative example 5 are respectively class 2; compared with the comparative example 5, the bonding force between the coating and the base material obtained by the chemical nickel plating method for the heterojunction solar cell and the silicon device is strong, and the coating has more excellent adhesion strength.
Test example III evaluation of coating quality
The surface morphology of the plated piece samples obtained by the chemical nickel plating method of the embodiment 3 and the comparative examples 3 to 5 of the invention is respectively tested by adopting SEM scanning electron microscope observation to deposit a copper layer with the thickness not more than 1 μm through a PVD physical vapor deposition method, then electroplating copper and thickening the round silicon chip as a piece to be plated, and the quality of the plating layer is evaluated. The test results are shown in table 3.
Table 3: evaluation result of plating quality
As can be seen from Table 3, the surface of the plating layer after chemical plating by the chemical nickel plating method provided by the invention is uniform and compact without pinholes, while the appearance of the plating layer after chemical plating by the chemical nickel plating method of comparative examples 3-5 has the problems of non-uniform plating layer, small amount of pores and the like. Therefore, the plating layer obtained by the chemical nickel plating method provided by the invention has uniform thickness, good compactness and good quality, and the quality of the plating layer is obviously improved.
Claims (8)
1. The chemical nickel plating method for the heterojunction solar cell and the silicon device is characterized by comprising the following steps:
s1, soaking the workpiece to be plated in an activation solution for activation at 28-35 ℃ for 7-12 min to obtain an activated workpiece to be plated;
s2, taking out the activated workpiece to be plated obtained in the step S1, washing the workpiece to be plated with distilled water, immersing the activated workpiece to be plated into a reducing agent for reduction treatment, washing with water, and drying to obtain a dried workpiece to be plated;
s3, soaking the dried piece to be plated obtained in the step S2 in nickel plating solution, and treating at the temperature of 30-40 ℃ for 5-8 min to obtain a nickel-plated piece;
s4, cleaning the nickel-plated piece obtained in the step S3 by distilled water and drying.
2. The electroless nickel plating method for heterojunction solar cells and silicon devices of claim 1, wherein said activating solution comprises the following components in percentage by weight: the content of palladium chloride is 0.03-0.18 g/L, the content of stannous chloride is 0.05-0.4 g/L, the content of hydrochloric acid with the concentration of 37% is 7-12 mL/L, the content of boric acid is 1-3 g/L, and the content of wetting agent is 0.1-1 g/L.
3. The electroless nickel plating method for heterojunction solar cells and silicon devices of claim 2, wherein said activating solution comprises the following components in percentage by weight: the content of palladium chloride is 0.12g/L, the content of stannous chloride is 0.26g/L, the content of hydrochloric acid with the concentration of 37% is 9mL/L, the content of boric acid is 2g/L, and the content of wetting agent is 0.4 g/L.
4. The chemical nickel plating method for the heterojunction solar cell and the silicon device as claimed in claim 2, wherein the wetting agent is prepared from ethylene glycol, propylene glycol alginate and alkyl glycoside according to a mass ratio of 10-13: 4-6: 1.
5. The method of electroless nickel plating of heterojunction solar cells and silicon devices of claim 1, wherein said nickel plating solution comprises the following components in parts by weight: 25-30 g/L of nickel sulfamate, 13-16 g/L of potassium hypophosphite, 4-7 g/L of complexing agent and 1-3 g/L of stabilizer.
6. The method of electroless nickel plating of heterojunction solar cells and silicon devices of claim 5, wherein said nickel plating solution comprises the following components in parts by weight: 28g/L of nickel sulfamate, 15g/L of potassium hypophosphite, 6g/L of complexing agent and 2g/L of stabilizing agent.
7. The chemical nickel plating method for the heterojunction solar cell and the silicon device as claimed in claim 5, wherein the complexing agent is prepared from sodium gluconate and sodium phytate according to the mass ratio of 12-15: 1 to 3.
8. The chemical nickel plating method for the heterojunction solar cell and the silicon device as claimed in claim 5, wherein the stabilizer is prepared from polyvinyl alcohol and locust bean gum according to a mass ratio of 5-8: 1 to 2.
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| CN114635126A (en) * | 2022-02-25 | 2022-06-17 | 晶澳（扬州）太阳能科技有限公司 | Nickel plating system of solar cell and method for improving thickness difference of nickel layer |
| CN115504686A (en) * | 2022-10-24 | 2022-12-23 | 台嘉成都玻纤有限公司 | Pretreatment method of glass fiber cloth |
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| CN106148922A (en) * | 2016-08-04 | 2016-11-23 | 广东工业大学 | A kind of chemical nickel-plating liquid and preparation method thereof |
| CN111868302A (en) * | 2018-03-06 | 2020-10-30 | 日产化学株式会社 | Electroless plating base agent comprising polymer and metal fine particles |
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| JP2014074191A (en) * | 2012-10-02 | 2014-04-24 | Kanto Gakuin | Electroless plating method and electroless plating film |
| CN106148922A (en) * | 2016-08-04 | 2016-11-23 | 广东工业大学 | A kind of chemical nickel-plating liquid and preparation method thereof |
| CN111868302A (en) * | 2018-03-06 | 2020-10-30 | 日产化学株式会社 | Electroless plating base agent comprising polymer and metal fine particles |
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| CN115504686A (en) * | 2022-10-24 | 2022-12-23 | 台嘉成都玻纤有限公司 | Pretreatment method of glass fiber cloth |
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