CN113038121B - In-situ measurement system and method for dark signal of charge coupled device after neutron irradiation - Google Patents
In-situ measurement system and method for dark signal of charge coupled device after neutron irradiation Download PDFInfo
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Abstract
The invention provides an in-situ measurement system and method for dark signals of a charge coupled device after neutron irradiation, which solve the problem that the device of the conventional measurement system cannot reflect the change rule of the parameters of the dark signals in a real radiation environment and a working state after a neutron irradiation experiment. The system comprises a radiation source, a CCD irradiation unit, a signal processing unit and an upper computer; the CCD irradiation unit comprises a CCD sensor, and a photosensitive surface of the CCD sensor is vertical to the beam direction of the neutron source; the signal processing unit comprises an FPGA main control module, a CCD driving circuit module, an A/D conversion module, an image data caching module, a transmission module and a power supply module; the CCD driving circuit module is respectively connected with the CCD sensor and the FPGA main control module; the A/D conversion module is respectively connected with the CCD sensor and the FPGA main control module; the image data cache module is connected with the FPGA main control module; the transmission module is connected with the FPGA main control module; and the upper computer processes the image data to obtain a change curve of the dark signal.
Description
Technical Field
The invention relates to the field of radiation effect testing, in particular to an in-situ measurement system and method for dark signals of a charge coupled device after neutron irradiation.
Background
The Charge Coupled Device (CCD) is a photoelectric conversion type image sensor, and has the functions of imaging, data processing and communication, etc., and because it has the advantages of low noise, low cost and stable operation, it is a core component in the imaging system of spacecraft, and can be extensively used for remote sensing to ground, remote sensing and space scientific detection. However, the CCD is subject to displacement damage in a space radiation or nuclear radiation environment, resulting in degradation of the CCD performance and, in severe cases, even functional failure.
Neutrons in a nuclear radiation environment, protons in a space environment and the like can induce the CCD to generate displacement damage, so that a CCD dark signal is increased, and the performance of the CCD is influenced, and therefore, the dark signal is an important radiation sensitive parameter for the performance evaluation of the CCD radiation damage resistance. Neutron irradiation CCD mainly generates displacement damage, and when ground examination of CCD displacement damage is carried out, a reactor neutron source is usually adopted as a radiation source. Because the CCD still has certain radioactivity (can harm human bodies) after being irradiated by neutrons, and an experimenter cannot measure a sample at the first time when an irradiation experiment is completed, the extraction of dark signal parameters after most of the neutron irradiation experiments is displacement measurement at present (namely, after waiting for a certain time, the radioactivity of a CCD device is reduced to a safe range, the sample is taken out from an irradiation chamber for measurement), and the CCD is in a non-working state before the displacement measurement, so that the change rule of the dark signal parameters in a real radiation environment and a working state cannot be reflected.
Disclosure of Invention
The invention aims to provide an in-situ measurement system and method for a dark signal of a charge coupled device after neutron irradiation, which solve the problem that the device of the conventional measurement system cannot reflect the change rule of the parameter of the dark signal in a real radiation environment and in a working state after a neutron irradiation experiment, and provide a test technical support for researching the short-term annealing effect of the neutron irradiation damage of a CCD (charge coupled device).
In order to achieve the purpose, the invention adopts the following technical scheme:
an in-situ measurement system for dark signals of a charge coupled device after neutron irradiation comprises a radiation source, a CCD irradiation unit, a signal processing unit and an upper computer; the radiation source is used for generating a neutron source beam and inducing the CCD irradiation unit to generate displacement damage; the CCD irradiation unit comprises a CCD sensor, and a light sensing surface of the CCD sensor is vertical to the beam direction of the neutron source; the signal processing unit comprises an FPGA main control module, a CCD driving circuit module, an A/D conversion module, an image data caching module, a transmission module and a power supply module; the CCD driving circuit module is respectively connected with the CCD sensor and the FPGA main control module, TTL time sequence driving signals generated by the FPGA main control module are converted into driving signals meeting the voltage requirements of the CCD sensor, and the CCD sensor completes image acquisition under the driving of the driving signals and outputs image analog quantity signals; the A/D conversion module is respectively connected with the CCD sensor and the FPGA main control module, carries out pre-stage filtering, signal amplification, dark level clamping and noise removal related double sampling processing on the image analog quantity signal, and converts the image analog quantity signal into a digital quantity signal; the FPGA main control module is used for generating TTL time sequence driving signals for normal work of the CCD sensor, providing clamping and sampling/holding pulse signals required by the A/D conversion module, simultaneously generating a synchronous control logic time sequence, and coordinating the image data caching module and the transmission module to transmit the image data to an upper computer; the image data caching module is connected with the FPGA main control module and is used for caching the image data obtained by the A/D conversion module; the transmission module is connected with the FPGA main control module and transmits the image data cached in the image data caching module to an upper computer; the upper computer processes the image data to obtain a change curve of a dark signal; the power module is respectively connected with the CCD sensor, the FPGA main control module, the CCD driving circuit module, the A/D conversion module, the image data caching module and the transmission module, and provides stable voltage for each module.
Furthermore, the signal processing unit is arranged in a shielding box, and the shielding box is used for shielding the influence of the radiation source on the signal processing unit, so that the signal processing unit is arranged in the irradiation chamber, the transmission distance between the irradiation unit and the signal processing unit is reduced, and the stable operation of the system is ensured.
Further, the CCD irradiation unit also comprises a socket matched with the CCD sensor, and the CCD sensor is arranged on the radiation plate through the socket.
Furthermore, the transmission module is an ethernet port transmission module, so as to realize remote transmission of data.
Furthermore, the a/D conversion module includes an analog signal preprocessing circuit and an analog-to-digital conversion circuit, the analog signal preprocessing circuit performs pre-stage filtering, signal amplification, dark level clamping, and noise-removal related double sampling processing on the input image analog signal, and the analog-to-digital conversion circuit converts the image analog signal into a digital signal.
Furthermore, the analog signal preprocessing circuit comprises a constant current driving circuit and a filtering amplifying circuit.
Furthermore, the CCD sensor is connected with the power supply module, the A/D conversion module and the CCD driving circuit module through DuPont wires.
Furthermore, the FPGA main control module comprises a field logic editable array and a FLASH storage circuit.
Meanwhile, the invention also provides an in-situ measurement method of the in-situ measurement system based on the dark signal of the charge coupled device after neutron irradiation, which comprises the following steps:
wiping a photosensitive surface of a CCD sensor, completely shielding the photosensitive surface of the CCD sensor by using masking paper, enabling the CCD sensor to work under a non-illumination condition, and then placing the CCD sensor at an irradiation point to enable the beam direction of a neutron source to be vertical to the photosensitive surface of the CCD sensor;
step two, controlling the temperature of the experimental environment at a set temperature, and controlling the influence of the temperature on a dark signal;
thirdly, connecting the signal processing unit with the CCD irradiation unit and the upper computer respectively, and supplying power by the power supply module;
setting the integration time of the CCD sensor through the upper computer, finishing the acquisition of dark signals before irradiation and storing data;
step five, repeating the step four N times, completing the measurement of dark signals before irradiation, and acquiring dark signal data before the irradiation of the CCD sensor;
step six, in the dark signal data obtained in the step five, eliminating the extreme values of all pixels in each frame of data, then calculating the average value, judging whether the CCD sensor is in a stable working state according to the processed dark signal data, and starting the radiation source to start irradiation after the CCD sensor is in the stable working state;
step seven, after the irradiation is finished, the test is started after the radiation source is closed;
step eight, the CCD sensor collects data, whether the CCD sensor fails or not is judged according to the collected data, and if the CCD sensor can collect the data, the next step is executed;
step nine, setting the integration time of the CCD sensor by the upper computer at intervals of a certain time, collecting dark signal data irradiated by the CCD sensor for M times, and storing the dark signal data;
step ten, calculating the average value of each frame of pixels in the dark signal data acquired in the step nine, and then eliminating the extreme values in the M groups of data to obtain the change curve of the dark signal.
Further, in the second step, the set temperature is 25 ℃; in the fifth step, N is 10; in the ninth step, M is 30.
Compared with the prior art, the system and the method have the following remarkable advantages:
1. the system and the method can carry out data measurement in the first time after the neutron irradiation experiment is finished, thereby obtaining the dark signal parameters (in-situ measurement) in the real radiation environment and the working state, and providing a test technical support for researching the short-term annealing effect of the neutron irradiation damage of the CCD.
2. The system adopts a design mode of separating the CCD irradiation unit and the signal processing unit into a master plate and a slave plate, and uses the socket on the irradiation plate to facilitate the repeated use of the CCD irradiation unit and reduce the influence of a radiation source on the system.
3. The system of the invention adopts the FPGA as the main control unit, can simplify the complexity of the system and effectively reduce the development cost.
4. The system realizes long-distance transmission through the Ethernet module and the upper computer, can remotely control the test in a safe environment, and solves the problem that the device still has radioactivity and cannot be measured in situ in time after a neutron irradiation experiment.
Drawings
FIG. 1 is a schematic diagram of an in-situ measurement system for dark signals of a charge-coupled device after neutron irradiation according to the present invention;
FIG. 2 is a schematic diagram of a CCD irradiation unit and a signal processing unit of the present invention;
FIG. 3 is a flow chart of an in-situ measurement method for dark signals of a charge coupled device after neutron irradiation.
Reference numerals: the device comprises a radiation source 1, a CCD irradiation unit 2, a signal processing unit 3, an upper computer 4, shading paper 5, a shielding box 6, a DuPont wire 7, a CCD sensor 21, a socket 22 and a radiation plate 23.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
The invention provides an in-situ measurement system and method for dark signals of a charge coupled device after neutron irradiation, which can carry out data measurement in the first time after the neutron irradiation experiment is finished, thereby obtaining the parameters of the dark signals (in-situ measurement) in a real radiation environment and a working state, and the system adopts an FPGA as a main control unit, thereby simplifying the complexity of the system and effectively reducing the development cost; meanwhile, the system adopts a design scheme of a master-slave board with a CCD irradiation unit and a signal processing unit separated from each other, and a socket 22 is used on the irradiation board so as to facilitate the repeated use of the system and reduce the influence of a radiation source on a system mother board; in addition, the system realizes long-distance transmission through the Ethernet and the upper computer, and solves the problem that the device still has radioactivity and cannot be measured in situ in time after a neutron irradiation experiment.
As shown in fig. 1 and fig. 2, the in-situ measurement system for dark signals of a charge coupled device after neutron irradiation in the present invention includes a radiation source 1, a CCD irradiation unit 2, a signal processing unit 3 and an upper computer 4; the radiation source 1 is used for generating a neutron source beam and inducing the CCD sensor 21 to generate displacement damage, and a reactor neutron source can be specifically adopted; the CCD irradiation unit 2 comprises a CCD sensor 21, and the light sensing surface of the CCD sensor 21 is vertical to the beam direction of the neutron source; the signal processing unit 3 comprises a power supply module, a CCD driving circuit module, an A/D conversion module, an FPGA main control module, an image data cache module and a transmission module; the CCD driving circuit module is respectively connected with the CCD sensor 21 and the FPGA main control module, TTL time sequence driving signals generated by the FPGA main control module are converted into driving signals meeting the voltage requirements of the CCD sensor 21, the CCD sensor 21 completes image acquisition under the driving of the driving signals, and image analog quantity signals are output; the A/D conversion module is respectively connected with the CCD sensor 21 and the FPGA main control module, carries out pre-stage filtering, signal amplification, dark level clamping and noise removal related double sampling processing on an input original CCD detector image analog quantity signal, and converts the image analog quantity signal output by the CCD sensor 21 into a digital quantity signal through an A/D converter; the FPGA main control module is the core of the system and is responsible for generating TTL time sequence driving signals required by the normal work of the CCD sensor 21, providing clamping and sampling/holding pulse signals required by the A/D processing of original analog signals, simultaneously generating a synchronous control logic time sequence, and coordinating the image data caching module and the transmission module to transmit the image data to the upper computer 4; the image data caching module is connected with the FPGA main control module and used for caching the image data obtained by the A/D conversion module and waiting for transmission to the upper computer 4; the transmission module is connected with the FPGA main control module and transmits the image data buffered in the image data buffer module to the upper computer 4, and the transmission module can specifically adopt an Ethernet port transmission module to realize remote transmission of the data; the upper computer 4 processes the image data to obtain a change curve of a dark signal; the power supply module is respectively connected with the CCD sensor 21, the FPGA main control module, the CCD drive circuit module, the A/D conversion module, the image data caching module and the transmission module, and provides stable voltage for each module.
As shown in fig. 2, in the signal processing unit 3 of the present invention, the CCD driving circuit module, the a/D conversion module, the SDRAM image data buffer module, and the ethernet transmission module use Verilog hardware description language to implement the functions of each module inside the FPGA; the CCD driving time sequence is multiplied by a phase-locked loop in the FPGA to obtain a reference clock signal, and then a counter is used for frequency division to obtain each path of driving time sequence signals; the A/D sampling module can ensure normal operation of the FPGA only when the FPGA provides correct register assignment and sampling clock signals meeting the time sequence requirement, the internal register is set through a serial interface to realize setting of functions such as VGA gain, black level correction, input clock polarity and the like, a reference clock signal is obtained by utilizing internal phase-locked loop frequency multiplication, and then the sampling clock signal is obtained by frequency division through a counter; the SDRAM image data caching module is responsible for initializing the SDRAM and regularly and automatically refreshing the SDRAM to control the writing and reading of the acquired data; the Ethernet interface module is responsible for configuring the PHY chip, controlling the working state of the PHY chip, using the FPGA as the MAC layer of the whole transmission protocol, calling the Ethernet communication IP scheme of the ALTERA itself, and completing the data transmission between the system and the upper computer 4 according to the corresponding protocol.
In the in-situ measurement system for the dark signal of the charge coupled device after the neutron irradiation, a CCD sensor 21 is connected with a power supply module, an A/D conversion module and a CCD driving circuit module through a DuPont wire 7, an FPGA main control module provides TTL time sequence signals, the CCD driving circuit module converts the signals to obtain driving time sequence signals meeting CCD voltage requirements, the CCD sensor 21 finishes image acquisition under the driving signals and outputs original analog signals of CCD image signals, then the original analog signals are amplified, denoised and subjected to analog-to-digital conversion through the A/D conversion module, data are transmitted to an upper computer 4 through an Ethernet port, and the upper computer 4 processes the data to obtain dark signal data.
In the in-situ measurement system of the present invention, CCD irradiation unit 2 further includes a socket 22 matching CCD sensor 21, and CCD sensor 21 is disposed on radiation plate 23 through socket 22. The socket 22 can specifically adopt 224-3345 of TFXTDOL company, the irradiation board is connected with the signal processing unit 3 through the dupont line 7, and the CCD socket 22 is used on the irradiation board to facilitate the reuse of the system, thereby reducing the influence of the radiation source 1 on the processing board of the system. The A/D conversion module can specifically comprise an analog signal preprocessing circuit and an analog-to-digital conversion circuit, and the analog signal preprocessing circuit specifically comprises a constant current driving circuit and a filtering amplification circuit. The FPGA main control module comprises a field logic editable array and a FLASH storage circuit. The signal processing unit 3 is installed in a shielding box 6, and the shielding box 6 is used for shielding the influence of the radiation source 1 on the signal processing unit 3, so that the signal processing unit 3 is arranged in the irradiation chamber and used for reducing the transmission distance between the irradiation unit and the signal processing unit 3 and ensuring the stable operation of the system.
Based on the system, the invention provides an in-situ measurement method for dark signals of a charge coupled device after neutron irradiation, in the method, shading paper 5 is used for completely blocking a CCD photosensitive surface, the CCD works under the condition of no illumination to collect the dark signals, the average value of each frame of pixels is calculated, then extreme values in data are eliminated, the size of the dark signals of the CCD at the corresponding moment is truly reflected, and finally the change rule of the dark signals in the short time of the CCD sensor 21 is obtained.
As shown in fig. 3, the in-situ measurement method for dark signals of a charge coupled device after neutron irradiation provided by the invention specifically includes the following steps:
wiping a photosensitive surface of a CCD sensor 21 clean, correctly installing the CCD sensor 21 on a socket 22 and locking a pin, and completely shielding the photosensitive surface of the CCD sensor 21 by using a piece of masking paper 5, so that the CCD sensor 21 works under the condition of no illumination, and an irradiation plate is placed at an irradiation point, so that the beam direction of a neutron source is vertical to the photosensitive surface of the CCD sensor 21;
step two, controlling the temperature of the experimental environment to be about 25 ℃, thereby controlling the influence of the temperature on the dark signal;
step three, connecting the signal processing unit 3 with the CCD irradiation unit 2 and the upper computer 4 respectively, turning on a power supply to supply power to the system, and checking whether the system can work normally;
setting the integration time of the CCD through the upper computer 4, completing the acquisition of dark signals before irradiation, and storing data;
step five, repeating the step four for 10 times, completing the measurement of the dark signal before irradiation, and acquiring the dark signal data of the CCD sensor 21 before irradiation;
sixthly, in the dark signal data obtained in the fifth step, after eliminating extreme values of all pixels in each frame of data, calculating an average value, judging whether the CCD sensor 21 is in a stable working state according to the processed dark signal data, and when the CCD sensor 21 is in the stable working state, starting the radiation source 1 and starting irradiation;
step seven, after the irradiation is finished, the test is started after the reactor is closed;
step eight, the CCD sensor 21 collects data, whether the CCD sensor 21 fails or not is judged according to the collected data, if the CCD sensor 21 can collect the data, the work is normal, and the next step is executed;
step nine, setting the integration time of the CCD sensor by the upper computer every one minute, collecting dark signal data after the irradiation of the CCD sensor, repeating for 30 times, and finishing the measurement of the dark signal after the irradiation of the CCD;
step ten, in the dark signal data obtained in the step nine, calculating the average value of each frame of pixels, and then eliminating the extreme value in 30 groups of data to obtain the change curve of the dark signal in a short time.
Claims (9)
1. An in-situ measurement method for dark signals of a charge coupled device after neutron irradiation is characterized by comprising the following steps:
step one, building an in-situ measurement system of a charge coupled device dark signal after neutron irradiation;
the in-situ measurement system comprises a radiation source (1), a CCD irradiation unit (2), a signal processing unit (3) and an upper computer (4);
the radiation source (1) is used for generating a neutron source beam to induce the CCD irradiation unit (2) to generate displacement damage;
the CCD irradiation unit (2) comprises a CCD sensor (21), and the light sensing surface of the CCD sensor (21) is vertical to the beam direction of the neutron source;
the signal processing unit (3) comprises an FPGA main control module, a CCD drive circuit module, an A/D conversion module, an image data cache module, a transmission module and a power supply module;
the CCD driving circuit module is respectively connected with the CCD sensor (21) and the FPGA main control module, TTL time sequence driving signals generated by the FPGA main control module are converted into driving signals meeting the voltage requirements of the CCD sensor (21), and the CCD sensor (21) completes image acquisition under the driving of the driving signals and outputs image analog quantity signals;
the A/D conversion module is respectively connected with the CCD sensor (21) and the FPGA main control module, carries out pre-stage filtering, signal amplification, dark level clamping and noise removal related double sampling processing on the image analog quantity signal, and converts the image analog quantity signal into a digital quantity signal;
the FPGA main control module is used for generating TTL time sequence driving signals for normal work of the CCD sensor (21), providing clamping and sampling/holding pulse signals required by the A/D conversion module, simultaneously generating a synchronous control logic time sequence, and coordinating the image data caching module and the transmission module to transmit the image data to the upper computer (4);
the image data caching module is connected with the FPGA main control module and is used for caching the image data obtained by the A/D conversion module;
the transmission module is connected with the FPGA main control module and transmits the image data cached in the image data caching module to an upper computer (4);
the upper computer (4) processes the image data to obtain a change curve of a dark signal;
the power supply module is respectively connected with the CCD sensor (21), the FPGA main control module, the CCD driving circuit module, the A/D conversion module, the image data caching module and the transmission module, and provides stable voltage for each module;
wiping the photosensitive surface of the CCD sensor clean, completely shielding the photosensitive surface of the CCD sensor by using shading paper, enabling the CCD sensor to work under the condition of no illumination, and then placing the CCD sensor at an irradiation point to enable the beam direction of a neutron source to be vertical to the photosensitive surface of the CCD sensor;
step three, controlling the temperature of the experimental environment at a set temperature, and controlling the influence of the temperature on a dark signal;
step four, the signal processing unit is respectively connected with the CCD irradiation unit and the upper computer, and the power supply module supplies power;
fifthly, setting the integration time of the CCD sensor through the upper computer, finishing the acquisition of dark signals before irradiation, and storing data;
step six, repeating the step five N times, completing the measurement of dark signals before irradiation, and acquiring dark signal data before the irradiation of the CCD sensor;
seventhly, in the dark signal data obtained in the sixth step, after the extreme values of all pixels in each frame of data are removed, the average value is calculated, whether the CCD sensor is in a stable working state or not is judged according to the processed dark signal data, and when the CCD sensor is in the stable working state, a radiation source is started to start irradiation;
step eight, after the irradiation is finished, starting the test after the radiation source is closed;
step nine, the CCD sensor collects data, whether the CCD sensor fails or not is judged according to the collected data, and if the CCD sensor can collect the data, the next step is executed;
step ten, setting the integration time of the CCD sensor by the upper computer at intervals of a certain time, collecting dark signal data irradiated by the CCD sensor for M times, and storing the dark signal data;
step eleven, calculating the average value of each frame of pixels in the dark signal data acquired in the step eleven, and then eliminating the extreme values in the M groups of data to obtain the change curve of the dark signal.
2. The in-situ measurement method for the dark signal of the charge coupled device after neutron irradiation according to claim 1, characterized in that: in the third step, the temperature is set to be 25 ℃; in the fifth step, N is 10; in the tenth step, M is 30.
3. The in-situ measurement method for the dark signal of the charge coupled device after neutron irradiation according to claim 1, characterized in that: the signal processing unit (3) is arranged in the shielding box (6), and the shielding box (6) is used for shielding the influence of the radiation source (1) on the signal processing unit (3), so that the signal processing unit (3) is arranged in the irradiation chamber, the transmission distance between the CCD irradiation unit (2) and the signal processing unit (3) is reduced, and the stable operation of the system is ensured.
4. The in-situ measurement method for the dark signal of the charge coupled device after neutron irradiation according to claim 3, characterized in that: the CCD irradiation unit (2) further comprises a socket (22) matched with the CCD sensor (21), and the CCD sensor (21) is arranged on the radiation plate (23) through the socket (22).
5. The in-situ measurement method for the dark signal of the charge coupled device after neutron irradiation according to any one of claims 1 to 4, characterized in that: the transmission module is an Ethernet port transmission module, and long-distance transmission of data is realized.
6. The in-situ measurement method for the dark signal of the charge coupled device after neutron irradiation according to claim 5, characterized in that: the A/D conversion module comprises an analog signal preprocessing circuit and an analog-to-digital conversion circuit, the analog signal preprocessing circuit carries out pre-stage filtering, signal amplification, dark level clamping and noise removal related double sampling processing on an input image analog quantity signal, and the analog-to-digital conversion circuit converts the image analog quantity signal into a digital quantity signal.
7. The method for in-situ measurement of the dark signal of the charge coupled device after neutron irradiation according to claim 6, wherein: the analog signal preprocessing circuit comprises a constant current driving circuit and a filtering amplifying circuit.
8. The method according to claim 7, wherein the method comprises: the CCD sensor (21) is connected with the power supply module, the A/D conversion module and the CCD driving circuit module through a DuPont wire (7).
9. The method according to claim 8, wherein the method comprises: the FPGA main control module comprises a field logic editable array and a FLASH storage circuit.
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| CN111432145A (en) * | 2020-05-19 | 2020-07-17 | 温州大学 | CCD driving method capable of compensating space irradiation damage |
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