CN114500994B - Method for testing radiation transient response of photoelectric image sensor - Google Patents
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Abstract
The invention provides a test method for the radiation transient response of a photoelectric image sensor, which solves the problems of the typical characteristic and rule experimental test of the transient response of the photoelectric image sensor under different radiation environments, realizes the rapid and accurate test and analysis of the transient response, and provides technical support for the radiation noise processing and the radiation signal identification of the photoelectric image sensor under the radiation environments. In order to avoid the influence of the background noise of the device, the method disclosed by the invention obtains the average value by collecting a plurality of frames of dark field images when the test is carried out, and then a method for subtracting the background noise is adopted in the data processing process. In order to avoid the influence of device heating on the result in the test process, when the transient response test is carried out, firstly, the test system is subjected to preheating treatment and monitoring, and the test is carried out after the temperature is stable. To avoid the effect of radiation noise on the test results, the transient response test system of the photoelectric image sensor is periodically moved out of the radiation field, or the photoelectric image sensor is replaced.
Description
Technical Field
The invention belongs to the field of radiation effect testing, and particularly relates to a testing method for radiation transient response of a photoelectric image sensor.
Background
The radiation transient response refers to the phenomenon that electron-hole pairs generated when radiation particles or rays pass through a sensitive area of the device are collected by the device to generate bright spots or bright lines in an output image. Compared with accumulated radiation damage, the radiation transient response is non-permanent damage, the imaging detection system is generated in the radiation field environment, and can recover after leaving the radiation field, and transient signals in each frame of image randomly appear.
The radiation transient response effect of the photoelectric image sensor is mainly divided into the following two aspects: photoelectric image sensors (such as charge coupled devices, CMOS image sensors and the like) applied to a radiation environment are affected by radiation particles or rays to generate transient noise, and the imaging and detection performances of the devices are disturbed or reduced; the photoelectric image sensor applied to the radiation detection environment uses transient response generated by radiation particles or rays as a signal, so as to detect radiation environment parameters. Therefore, the development of the radiation transient response research of the photoelectric image sensor under different particle or ray radiation environments has important significance.
In the development of radiation transient response research of a photoelectric image sensor, quick and accurate measurement of the transient response of the photoelectric image sensor must be realized. In the process of developing transient response test of the photoelectric image sensor, device noise floor and thermal noise in the working process have certain influence on test results. In addition, an optoelectronic image sensor operating in a radiation environment will suffer from cumulative irradiation damage by particles or rays, thereby generating radiation noise. The noise can have a certain influence on the transient response test of the photoelectric image sensor. It is currently required to realize rapid and accurate test and analysis of the transient response of an optoelectronic image sensor.
Disclosure of Invention
In order to realize rapid and accurate test and analysis of transient response, the invention provides a test method of radiation transient response of a photoelectric image sensor, which solves the problems of typical characteristic and regular experimental test of the transient response of the photoelectric image sensor under different radiation environments and provides technical support for radiation noise processing and radiation signal identification of the photoelectric image sensor under the radiation environments.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
a method for testing radiation transient response of a photoelectric image sensor comprises the following steps:
Selecting the type of radiation particles or rays generating transient response, and determining the incident fluence rate, the incident angle, the integration time and the data acquisition frequency of the radiation particles or rays, or determining the incident dose rate, the incident angle, the integration time and the data acquisition frequency of the radiation particles or rays;
Step two, a transient response test system of the photoelectric image sensor is built, shading treatment is carried out on the photoelectric image sensor, and then the transient response test system continuously collects image data until the average output value of the image data is stable;
Collecting dark field image data under the conditions of a non-radiation field and different integration time, then placing a photoelectric image sensor in the radiation field, and sequentially collecting radiation image data output under the conditions of different incidence fluence rates, different incidence angles and different integration time, or sequentially collecting radiation image data output under the conditions of different incidence dose rates, different incidence angles and different integration time;
step four, moving the transient response test system of the photoelectric image sensor out of the radiation field in a set time, returning to the step three, moving the transient response test system of the photoelectric image sensor out of the radiation field again in the set time, returning to the step three, and repeating the process for a plurality of times to obtain a plurality of dark field image data and radiation image data; in the process, if the radiation particles or rays seriously damage the photoelectric image sensor, the photoelectric image sensor is replaced, and the step II is returned;
Step five, performing data processing on the acquired dark field image data and radiation image data to obtain a transient response image and a transient response experimental rule;
Averaging the output value of each pixel point of the multi-frame dark field image data outside the radiation field to obtain a background noise image of the photoelectric image sensor, and subtracting the background noise image from the radiation image data under the radiation field to obtain a transient response image;
And carrying out edge detection on the transient response image to obtain the morphological characteristics of the transient response, and drawing multi-frame transient response signal distribution curves under different conditions to obtain a transient response experimental rule.
In the first step, the integration time is determined according to the incident fluence rate or the incident dose rate of the radiation particles or rays, and the maximum integration time setting judgment standard is that the pixel unit duty ratio of the transient response signal output by the photoelectric image sensor is not more than 50%.
Further, in the second step, the specific method for judging that the average output value of the image data is stable is as follows: after continuously collecting the image data for a period of time, the internal temperature of the photoelectric image sensor changes by less than 0.1 ℃ within 1 minute or the output average dark signal changes by less than 2 percent.
Further, in the second step, the shading process for the photoelectric image sensor specifically includes: the light shielding material is used for completely shielding the photosensitive surface of the photoelectric image sensor, and the light shielding material is opaque light shielding paper.
Further, in the third step, under the same irradiation state, the number of frames of the collected radiation image data is not less than 20 frames, and the radiation image data is generally stored in an 8-bit, 12-bit or 16-bit raw format.
Further, in the third step, the number of acquired data frames of the dark field image data is not less than 50 frames in the non-radiation field.
Further, in the fourth step, the judging method for the serious damage of the ray to the photoelectric image sensor is as follows: in the radiation field environment, the signal value corresponding to the highest point in the output signal statistical distribution diagram of the photoelectric image sensor is increased; the judging method for the serious damage of the radiation particles to the photoelectric image sensor comprises the following steps: in the radiation field environment, thermal pixels exceeding a set threshold exist in the output image.
Further, the photoelectric image sensor is a charge coupled device or a CMOS image sensor.
Compared with the prior art, the invention has the following beneficial effects:
1. the method provided by the invention tests and processes the transient response of the photoelectric image sensor to obtain the typical characteristics and rules of the transient response, and provides data support for transient response evaluation, transient response noise processing and transient response reinforcement resistance design of the photoelectric image sensor applied to the radiation field environment.
2. The method can realize accurate measurement of transient response. In order to avoid the influence of the background noise of the device, the invention obtains the average value by collecting a plurality of frames of dark field images when the test is carried out, and then a method for subtracting the background noise is adopted in the data processing process. In order to avoid the influence of device heating on the result in the test process, when the transient response test is carried out, the method firstly carries out preheating treatment on the test system and monitors the test system, and the test is carried out after the temperature is stable. To avoid the impact of accumulated radiation noise on the test results, the transient response test system of the optoelectronic image sensor is periodically moved out of the radiation field, or the optoelectronic image sensor is replaced.
Drawings
FIG. 1 is a flow chart of a method for testing radiation transient response of a photoelectric image sensor according to an embodiment of the invention;
FIG. 2 is a graph showing exemplary output images of Co-60 gamma-ray transient response of a CMOS image sensor in accordance with an embodiment of the present invention;
FIG. 3 is a graph showing the transient response output distribution of Co-60 gamma rays of a continuous three-frame CMOS image sensor with a dose rate of 0.05rad (Si)/s in an embodiment of the present invention;
FIG. 4 is a graph showing the transient response output profile of a CMOS image sensor Co-60 gamma rays without and with a dose rate of 0.1rad (Si)/s, as compared to a dark field.
Detailed Description
The invention will be described in detail below with reference to the drawings and the detailed description. It should be understood by those skilled in the art that these embodiments are merely for explaining the technical principles of the present invention, and are not intended to limit the scope of the present invention.
The invention provides a method for testing radiation transient response of a photoelectric image sensor, wherein the photoelectric image sensor mainly comprises a Charge Coupled Device (CCD), a CMOS image sensor and the like.
The invention provides a test method for radiation transient response of a photoelectric image sensor, which specifically comprises the following steps:
Selecting the types of radiation particles or rays generating transient response according to test requirements, and determining the incident fluence rate (or incident dose rate), the incident angle, the integration time and the data acquisition frequency of the radiation particles or rays;
In the process of selecting the integration time, the determination is required according to the incident fluence rate or the incident dose rate of the radiation particles or rays, and in general, the maximum integration time setting judgment standard is that the pixel unit ratio of the transient response signal output by the photoelectric image sensor is not more than 50%;
Step two, a transient response test system of the photoelectric image sensor is built, so that the transient response test system of the photoelectric image sensor can normally output images, shading treatment is carried out on the photoelectric image sensor, and then the transient response test system continuously collects image data for a period of time until the average output value of the image data is stable; the specific judging method for the average output value of the image data to be stable comprises the following steps: after continuously collecting image data for a period of time, the internal temperature of the photoelectric image sensor changes by less than 0.1 ℃ within 1 minute or the output average dark signal changes by less than 2%;
Step three, collecting dark field image data under the conditions of non-radiation field and different integration time; then placing a photoelectric image sensor in a radiation field, and sequentially collecting radiation image data output under the conditions of different incident fluence rates, different incident angles and different integration times, or sequentially collecting radiation image data output under the conditions of different incident dose rates, different incident angles and different integration times;
When the photoelectric image sensor performs shading treatment, a shading material is adopted to completely shade the photosensitive surface of the photoelectric image sensor, and the shading material is generally opaque shading paper; if transient effects generated in the photoelectric image sensor after radiation particles or rays pass through different materials to be researched, the materials to be researched can be added between the shading paper and the photoelectric image sensor;
under the same irradiation state, the number of frames of the collected radiation image data is not less than 20 frames, and the image data is generally stored in an 8-bit, 12-bit or 16-bit raw format; in the non-radiation field, the acquired data frame number of the dark field image data is not less than 50 frames;
step four, if the transient response test time in the irradiation field is longer, radiation particles or rays can cause certain damage to the photoelectric image sensor, so that noise floor is increased, the photoelectric image sensor transient response test system needs to be moved out of the irradiation field at regular intervals, then the process is returned to step three, a plurality of times of dark field image data and radiation image data are obtained, and the test time and the regular movement time are determined according to factors such as transient response test content, radiation field intensity, sensitivity of the photoelectric image sensor to radiation damage and the like; meanwhile, if the time test time is too long, when accumulated irradiation causes larger damage to the photoelectric image sensor and seriously affects the transient response test result, the photoelectric image sensor needs to be replaced at the moment, and the second step is returned;
The judging method of the damage of the rays to the photoelectric image sensor is that the signal value corresponding to the highest point in the output signal statistical distribution diagram of the photoelectric image sensor is increased in the radiation field environment, namely the noise floor of the photoelectric image sensor is increased;
The judging standard of the damage of the radiation particles to the photoelectric image sensor is that more thermal pixels exist in the output image (the output signal is far higher than before irradiation and the continuous multi-frame output signal is hardly changed and is shown as a fixed bright spot in the image) under the radiation field environment, namely the proportion of the thermal pixels in the output image exceeds a set threshold value, for example, exceeds 20%; in addition, in order to avoid the overhigh irradiation fluence rate and overlong irradiation time, accumulated damage increase is generated in the device, and a low fluence rate (dose rate) and long integration time mode is generally adopted for data acquisition;
Step five, performing data processing on the acquired dark field image data and radiation image data to obtain a transient response image and a transient response experimental rule;
Averaging the output value of each pixel point of multi-frame dark field image data outside the radiation field to obtain a background noise image of the photoelectric image sensor, and subtracting the background noise image from the radiation image data under the radiation field to obtain a transient response image; obtaining the morphological characteristics of transient response by carrying out edge detection on the transient response image; and obtaining a transient response experimental rule by drawing multi-frame transient response signal distribution curves under different conditions.
The embodiment of the invention provides a method for testing the radiation transient response of a CMOS image sensor Co-60 gamma rays, which is illustrated by combining a flow chart 1 of an experimental testing method for the radiation transient response of a photoelectric image sensor, and comprises the following specific steps:
step one, the radiation source of the transient response experiment is Co-60 gamma rays, the dose rate is 0.05rad (Si)/s and 0.1rad (Si)/s respectively, the incident angle of particles is vertical incidence (90 degrees with the plane of the detector), the integration time is 6.0ms, and the acquired data frequency is 2 (namely, two frames of images are acquired per second);
Secondly, shading the photoelectric image sensor, collecting image data under the non-radiation field condition, continuously collecting the image data for about 30 minutes, preliminarily judging that the collection of the transient response test system is nearly stable by observing the average gray value of the image output by the transient response test system in real time, and then, in the continuous 5-minute collection time, changing the average value of the output image signal by about 1 percent, wherein the output is considered to be stable;
Step three, according to the calibration value of a laboratory dose rate measurement system, placing a transient response test system of the CMOS image sensor at a position with a dose rate of 0.05rad (Si)/s, placing the CMOS image sensor at an incidence angle of 90 degrees with Co-60 gamma rays, and shielding and protecting an outer module of the transient response test system except the CMOS image sensor;
According to an experimental scheme, setting integration time and acquisition frequency, setting the integration time to be 6.0ms in the test, acquiring 20 frames of frames, and storing raw format data with a format of 16bit unsigned;
Step four, a radiation source is put out from a stored water well, data collection is started after the radiation source reaches a specified position, the radiation source is immediately lowered after the data collection is completed, the radiation is stopped, a CMOS image sensor transient response test system is placed at a position with the dosage rate of 0.1rad (Si)/s, and shielding protection is carried out on the transient response test system except the outer module of the CMOS image sensor; the radiation source is put out from the stored water well, data acquisition is started after the radiation source reaches a specified position, the radiation source is immediately lowered after the data acquisition is completed, and the radiation is stopped;
And fifthly, importing the acquired data into an image data processing system for data processing to obtain typical characteristics and experimental rules of Co-60 gamma-ray induced transient response, wherein a typical output image is shown in fig. 2, and distribution diagrams are shown in fig. 3 and 4.
Claims (5)
1. The method for testing the radiation transient response of the photoelectric image sensor is characterized by comprising the following steps of:
Selecting the type of radiation particles or rays generating transient response, and determining the incident fluence rate, the incident angle, the integration time and the data acquisition frequency of the radiation particles or rays, or determining the incident dose rate, the incident angle, the integration time and the data acquisition frequency of the radiation particles or rays;
The integration time is determined according to the incident fluence rate or the incident dose rate of the radiation particles or rays, and the maximum integration time sets a judgment standard that the pixel unit ratio of the transient response signal output by the photoelectric image sensor is not more than 50%;
Step two, a transient response test system of the photoelectric image sensor is built, shading treatment is carried out on the photoelectric image sensor, and then the transient response test system continuously collects image data until the average output value of the image data is stable;
The specific judging method for stabilizing the average output value of the image data comprises the following steps: after continuously collecting image data for a period of time, the internal temperature of the photoelectric image sensor changes by less than 0.1 ℃ within 1 minute or the output average dark signal changes by less than 2%;
Collecting dark field image data under the conditions of a non-radiation field and different integration time, then placing a photoelectric image sensor in the radiation field, and sequentially collecting radiation image data output under the conditions of different incidence fluence rates, different incidence angles and different integration time, or sequentially collecting radiation image data output under the conditions of different incidence dose rates, different incidence angles and different integration time;
step four, moving the transient response test system of the photoelectric image sensor out of the radiation field in a set time, returning to the step three, moving the transient response test system of the photoelectric image sensor out of the radiation field again in the set time, returning to the step three, and repeating the process for a plurality of times to obtain a plurality of dark field image data and radiation image data; in the process, if the radiation particles or rays seriously damage the photoelectric image sensor, the photoelectric image sensor is replaced, and the step II is returned;
The judging method for the serious damage of the rays to the photoelectric image sensor comprises the following steps: in the radiation field environment, the signal value corresponding to the highest point in the output signal statistical distribution diagram of the photoelectric image sensor is increased; the judging method for the serious damage of the radiation particles to the photoelectric image sensor comprises the following steps: under the radiation field environment, a thermal pixel exceeding a set threshold exists in an output image;
Step five, performing data processing on the acquired dark field image data and radiation image data to obtain a transient response image and a transient response experimental rule;
Averaging the output value of each pixel point of the multi-frame dark field image data outside the radiation field to obtain a background noise image of the photoelectric image sensor, and subtracting the background noise image from the radiation image data under the radiation field to obtain a transient response image;
And carrying out edge detection on the transient response image to obtain the morphological characteristics of the transient response, and drawing multi-frame transient response signal distribution curves under different conditions to obtain a transient response experimental rule.
2. The method for testing radiation transient response of a photoelectric image sensor according to claim 1, wherein: in the second step, the shading processing for the photoelectric image sensor specifically includes: the light shielding material is used for completely shielding the photosensitive surface of the photoelectric image sensor, and the light shielding material is opaque light shielding paper.
3. The method for testing radiation transient response of a photoelectric image sensor according to claim 1, wherein: in the third step, under the same irradiation state, the number of frames of the collected radiation image data is not less than 20 frames, and the radiation image data is stored in an 8-bit, 12-bit or 16-bit raw format.
4. The method for testing radiation transient response of a photoelectric image sensor according to claim 1, wherein: in the third step, the number of acquired data frames of dark field image data is not less than 50 frames in the non-radiation field.
5. The method for testing radiation transient response of a photoelectric image sensor according to claim 1, wherein: the photoelectric image sensor is a charge coupled device or a CMOS image sensor.
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| CN102017147B (en) * | 2007-04-18 | 2014-01-29 | 因维萨热技术公司 | Materials, systems and methods for optoelectronic devices |
| US8680473B2 (en) * | 2011-10-31 | 2014-03-25 | Bruker Axs, Inc. | Multiply-sampled CMOS sensor for X-ray diffraction measurements with corrections for non-ideal sensor behavior |
| US10107921B1 (en) * | 2016-09-08 | 2018-10-23 | Koninklijke Philips N.V. | Radiation detector and X-ray imaging system |
| CN106872142B (en) * | 2017-01-23 | 2018-11-23 | 西北核技术研究所 | The measurement method of image retention after a kind of cmos image sensor proton irradiation |
| CN107155073B (en) * | 2017-05-04 | 2019-06-07 | 西北核技术研究所 | Dynamic rage extension method is imaged in transient state based on imaging sensor multi-frame exposure |
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| JP6860538B2 (en) * | 2018-09-26 | 2021-04-14 | キヤノン株式会社 | Radiation imaging device, radiation imaging system, control method of radiation imaging device, and program |
| US11143672B2 (en) * | 2019-06-25 | 2021-10-12 | The Board Of Trustees Of The University Of Illinois | Method and apparatus for correcting responsivity variation in photothermal imaging |
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