CN114500994A - Method for testing radiation transient response of photoelectric image sensor - Google Patents
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Abstract
The invention provides a method for testing radiation transient response of a photoelectric image sensor, which solves the problem of typical characteristics and regular experimental test of transient response of the photoelectric image sensor in different radiation environments, realizes quick and accurate test and analysis of the transient response, and provides technical support for radiation noise processing and radiation signal identification of the photoelectric image sensor in the radiation environment. In order to avoid the influence of the background noise of the device, the method of the invention acquires multi-frame dark field images to calculate the average value when carrying out the test, and then adopts a method of subtracting the background noise in the data processing process. In order to avoid the influence of device heating on the result in the test process, when the transient response test is carried out, the test system is preheated and monitored at first, and the test is carried out after the temperature is stable. In order to avoid the influence of radiation noise on the test result, the transient response test system of the photoelectric image sensor is periodically moved out of a radiation field, or the photoelectric image sensor is replaced.
Description
Technical Field
The invention belongs to the field of radiation effect testing, and particularly relates to a method for testing radiation transient response of a photoelectric image sensor.
Background
Radiation transient response refers to the phenomenon in which electron-hole pairs generated as radiation particles or rays pass through the sensitive area of the device are collected by the device to produce bright spots or lines in the output image. Compared with accumulated irradiation damage, the radiation transient response is non-permanent damage, the imaging detection system is generated in the radiation field environment and can be recovered after leaving the radiation field, and transient signals in each frame of image randomly appear.
The radiation transient response effect of the photoelectric image sensor is mainly divided into the following two aspects: the photoelectric image sensor (such as a charge coupled device, a CMOS image sensor and the like) applied in a radiation environment is influenced by radiation particles or rays, so that transient noise is generated, and the imaging and detecting performances of the device are interfered or reduced; the photoelectric image sensor applied to the radiation detection environment takes the transient response generated by radiation particles or rays as a signal, and then detects the radiation environment parameters. Therefore, the research on the radiation transient response of the photoelectric image sensor under different particle or ray radiation environments has great significance.
In the process of developing radiation transient response research of the photoelectric image sensor, the transient response of the photoelectric image sensor must be rapidly and accurately measured. In the process of carrying out transient response test of the photoelectric image sensor, background noise of devices and thermal noise in the working process have certain influence on the test result. Furthermore, a photoelectric image sensor operating in a radiation environment is damaged by cumulative irradiation of particles or rays, thereby generating radiation noise. The noise can affect the transient response test of the photoelectric image sensor. At present, the transient response of the photoelectric image sensor needs to be tested and analyzed quickly and accurately.
Disclosure of Invention
The invention provides a method for testing radiation transient response of a photoelectric image sensor, which aims to realize rapid and accurate test and analysis of transient response, solves the problem of typical characteristic and regular experimental test of transient response of the photoelectric image sensor in different radiation environments, and provides technical support for radiation noise processing and radiation signal identification of the photoelectric image sensor in the radiation environment.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for testing radiation transient response of a photoelectric image sensor comprises the following steps:
selecting the type of radiation particles or rays generating transient response, and determining the incident fluence rate, the incident angle, the integration time and the data acquisition frequency of the radiation particles or rays, or determining the incident fluence rate, the incident angle, the integration time and the data acquisition frequency of the radiation particles or rays;
step two, a transient response test system of the photoelectric image sensor is set up, shading processing is carried out on the photoelectric image sensor, and then the transient response test system continuously collects image data until the average output value of the image data is stable;
collecting dark field image data under the conditions of a non-radiation field and different integration times, then placing the photoelectric image sensor in the radiation field, and sequentially collecting radiation image data output under the conditions of different incident fluence rates, different incident angles and different integration times, or sequentially collecting radiation image data output under the conditions of different incident dose rates, different incident angles and different integration times;
step four, moving the transient response test system of the photoelectric image sensor out of the radiation field within the set time, then returning to the step three, moving the transient response test system of the photoelectric image sensor out of the radiation field again within the set time, returning to the step three, repeating the process for multiple times, and obtaining a plurality of dark field image data and radiation image data; in the process, if the radiation particles or rays seriously damage the photoelectric image sensor, replacing the photoelectric image sensor and returning to the step two;
fifthly, carrying out data processing on the obtained dark field image data and the radiation image data to obtain a transient response image and a transient response experiment rule;
averaging output values of each pixel point of multi-frame dark field image data outside the radiation field to obtain a background noise image of the photoelectric image sensor, and subtracting the background noise image from the radiation image data in the radiation field to obtain a transient response image;
and performing edge detection on the transient response image to obtain the appearance characteristic of the transient response, drawing multi-frame transient response signal distribution curves under different conditions, and obtaining a transient response experiment rule.
Further, in the first step, the integration time is determined according to the incident fluence rate or the incident dose rate of the radiation particles or the radiation rays, and the maximum integration time setting judgment standard is that the proportion of the pixel unit of the transient response signal output by the photoelectric image sensor is not more than 50%.
Further, in the second step, a specific method for determining that the average output value of the image data is stable is as follows: after continuously collecting image data for a period of time, the internal temperature of the photoelectric image sensor changes by less than 0.1 ℃ within 1 minute or the output average dark signal changes by less than 2%.
Further, in the second step, the light shielding treatment of the photoelectric image sensor specifically comprises: the light-shielding material is adopted to completely shield the photosensitive surface of the photoelectric image sensor, and the light-shielding material is lighttight light-shielding paper.
Further, in the third step, under the same irradiation state, the number of frames of the acquired radiation image data is not less than 20 frames, and the radiation image data is generally stored in an 8-bit, 12-bit or 16-bit raw format.
Further, in the third step, in the non-radiation field, the number of the collected data frames of the dark field image data is not less than 50 frames.
Further, in the fourth step, the method for determining that the radiation has a serious damage to the photoelectric image sensor includes: under the environment of a radiation field, a signal value corresponding to the highest point in the output signal statistical distribution graph of the photoelectric image sensor is increased; the method for judging the serious damage of the radiation particles to the photoelectric image sensor comprises the following steps: and under the radiation field environment, thermal pixels exceeding a set threshold exist in the output image.
Further, the photoelectric image sensor is a charge coupled device or a CMOS image sensor.
Compared with the prior art, the invention has the following beneficial effects:
1. the method tests the transient response of the photoelectric image sensor and processes data to obtain the typical characteristics and rules of the transient response, thereby providing data support for the transient response evaluation, the transient response noise processing and the anti-transient response reinforcement design of the photoelectric image sensor applied to the radiation field environment.
2. The method can realize accurate measurement of transient response. In order to avoid the influence of the background noise of the device, the method acquires multi-frame dark field images to calculate the mean value when testing is carried out, and then adopts a method of subtracting the background noise in the data processing process. In order to avoid the influence of device heating on the result in the test process, the method of the invention firstly carries out preheating treatment and monitoring on the test system when carrying out transient response test, and carries out test after the temperature is stable. In order to avoid the influence of accumulated radiation noise on the test result, the transient response test system of the photoelectric image sensor is periodically moved out of a radiation field, or the photoelectric image sensor is replaced.
Drawings
FIG. 1 is a flow chart of a method for testing radiation transient response of a photoelectric image sensor according to an embodiment of the present invention;
FIG. 2 is a typical output image of a CMOS image sensor with Co-60 gamma ray transient response according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the output distribution of Co-60 gamma ray transient response of a continuous three-frame CMOS image sensor with a dose rate of 0.05rad (Si)/s according to an embodiment of the present invention;
FIG. 4 is a diagram of the output distribution of the transient response of Co-60 gamma ray of the CMOS image sensor without dark field subtraction and after dark field subtraction when the dose rate is 0.1rad (Si)/s in the embodiment of the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood by those skilled in the art that these embodiments are only for explaining the technical principle of the present invention and are not intended to limit the scope of the present invention.
The invention provides a method for testing radiation transient response of a photoelectric image sensor, wherein the photoelectric image sensor mainly comprises a Charge Coupled Device (CCD), a CMOS image sensor and the like.
The method for testing the radiation transient response of the photoelectric image sensor specifically comprises the following steps:
selecting the type of radiation particles or rays generating transient response according to test requirements, and determining the incident fluence rate (or incident dose rate), the incident angle, the integration time and the data acquisition frequency of the radiation particles or rays;
in the selection process of the integration time, the determination is required according to the incident fluence rate or the incident dose rate of the radiation particles or rays, and generally, the maximum integration time is set as a judgment standard that the proportion of pixel units outputting transient response signals by the photoelectric image sensor is not more than 50%;
step two, a transient response test system of the photoelectric image sensor is set up, so that the transient response test system of the photoelectric image sensor can normally output images, the photoelectric image sensor is shielded, and then the transient response test system continuously collects image data for a period of time until the average output value of the image data is stable; the specific method for judging whether the average output value of the image data is stable is as follows: after continuously acquiring image data for a period of time, the change of the internal temperature of the photoelectric image sensor is less than 0.1 ℃ within 1 minute or the change of the output average dark signal is less than 2%;
collecting dark field image data under the conditions of a non-radiation field and different integration time; then, placing the photoelectric image sensor in a radiation field, and sequentially acquiring radiation image data output under the conditions of different incident fluence rates, different incident angles and different integration times, or sequentially acquiring radiation image data output under the conditions of different incident dose rates, different incident angles and different integration times;
when the photoelectric image sensor is shielded, a light shielding material is adopted to completely shield the photosensitive surface of the photoelectric image sensor, and the light shielding material is generally lightproof shielding paper; if the transient effect generated in the photoelectric image sensor after radiation particles or rays pass through different materials needs to be researched, the materials needing to be researched can be added between the light shielding paper and the photoelectric image sensor;
under the same irradiation state, the number of the collected radiation image data frames is not less than 20 frames, and the image data is generally stored in an 8-bit, 12-bit or 16-bit raw format; under a non-radiation field, the number of data frames for acquiring dark field image data is not less than 50 frames;
step four, if the transient response test time in the irradiation field is long, radiation particles or rays can cause certain damage to the photoelectric image sensor, so that background noise is increased, the transient response test system of the photoelectric image sensor needs to be moved out of the irradiation field regularly, then the step three is returned, the process is executed for multiple times, multiple dark field image data and multiple radiation image data are obtained, and the test time and the regular moving-out time are determined according to transient response test contents, radiation field intensity, sensitivity of the photoelectric image sensor to radiation damage and other factors; meanwhile, if the time testing time is too long, when the accumulated irradiation causes great damage to the photoelectric image sensor and seriously affects the transient response testing result, the photoelectric image sensor needs to be replaced at the moment, and the step II is returned;
the method for judging the damage of the ray to the photoelectric image sensor is that under the radiation field environment, the signal value corresponding to the highest point in the output signal statistical distribution map of the photoelectric image sensor is increased, namely the background noise of the photoelectric image sensor is increased;
the criterion for judging damage of radiation particles to the photoelectric image sensor is that under the radiation field environment, a plurality of thermal pixels exist in an output image (an output signal is far higher than that before irradiation, continuous multi-frame output signals hardly change and show as fixed bright spots in the image), namely the occupation ratio of the thermal pixels in the output image exceeds a set threshold, for example, exceeds 20%; in addition, in order to avoid the increase of accumulated damage generated in the device due to excessively high irradiation fluence rate and excessively long irradiation time, data acquisition is generally performed by adopting a low fluence rate (dose rate) and long integration time mode;
fifthly, carrying out data processing on the obtained dark field image data and the radiation image data to obtain a transient response image and a transient response experiment rule;
averaging the output values of each pixel point of multi-frame dark field image data outside the radiation field to obtain a background noise image of the photoelectric image sensor, and subtracting the background noise image from the radiation image data in the radiation field to obtain a transient response image; carrying out edge detection on the transient response image to obtain the morphology characteristics of the transient response; and obtaining a transient response experimental rule by drawing multi-frame transient response signal distribution curves under different conditions.
The embodiment of the invention provides a Co-60 gamma ray irradiation transient response testing method for a CMOS image sensor, which is described in a flowchart 1 of an experimental testing method for photoelectric image sensor radiation transient response, and comprises the following specific steps:
step one, the radiation source of the transient response experiment is Co-60 gamma rays, the dose rates are 0.05rad (Si)/s and 0.1rad (Si)/s respectively, the particle incidence angle is vertical incidence (90 degrees to the plane of a detector), the integration time is 6.0ms, and the acquisition data frequency is 2 (namely two frames of images are acquired per second);
shading the photoelectric image sensor, acquiring image data under a non-radiation field condition, continuously acquiring for about 30 minutes, primarily judging that the acquisition of the transient response test system is nearly stable by observing the average gray value of an image output by the transient response test system in real time, and then outputting image signals with the average value change of about 1% within continuous acquisition time of 5 minutes, wherein the output is considered to be stable;
thirdly, placing the transient response testing system of the CMOS image sensor at the position of 0.05rad (Si)/s dosage rate according to the calibration value of the laboratory dosage rate measuring system, placing the CMOS image sensor at an incident angle of 90 degrees with Co-60 gamma rays, and shielding and protecting external modules of the transient response testing system except the CMOS image sensor;
according to the experimental scheme, setting integration time and acquisition frequency, setting the integration time as 6.0ms, the acquisition frame number as 20 frames and storing raw format data with a 16-bit signaled format in the test;
step four, the radiation source is lifted out of the stored water well, data acquisition is started after the specified position is reached, the source is immediately reduced after the data acquisition is finished, the irradiation is stopped, the CMOS image sensor transient response testing system is placed at the position with the dose rate of 0.1rad (Si)/s, and the external modules of the transient response testing system except the CMOS image sensor are shielded and protected; the radiation source is lifted out of the stored water well, data acquisition is started after the specified position is reached, the source is lowered immediately after the data acquisition is finished, and the irradiation is stopped;
and step five, importing the acquired data into an image data processing system for data processing to obtain typical characteristics and experimental rules of the transient response induced by the Co-60 gamma rays, wherein a typical output image is shown in fig. 2, and distribution maps are shown in fig. 3 and 4.
Claims (8)
1. A method for testing radiation transient response of a photoelectric image sensor is characterized by comprising the following steps:
selecting the type of radiation particles or rays generating transient response, and determining the incident fluence rate, the incident angle, the integration time and the data acquisition frequency of the radiation particles or rays, or determining the incident fluence rate, the incident angle, the integration time and the data acquisition frequency of the radiation particles or rays;
step two, a transient response test system of the photoelectric image sensor is set up, shading processing is carried out on the photoelectric image sensor, and then the transient response test system continuously collects image data until the average output value of the image data is stable;
collecting dark field image data under the conditions of a non-radiation field and different integration times, then placing the photoelectric image sensor in the radiation field, and sequentially collecting radiation image data output under the conditions of different incident fluence rates, different incident angles and different integration times, or sequentially collecting radiation image data output under the conditions of different incident dose rates, different incident angles and different integration times;
step four, moving the transient response test system of the photoelectric image sensor out of the radiation field within the set time, then returning to the step three, moving the transient response test system of the photoelectric image sensor out of the radiation field again within the set time, returning to the step three, repeating the process for multiple times, and obtaining a plurality of dark field image data and radiation image data; in the process, if the radiation particles or rays seriously damage the photoelectric image sensor, replacing the photoelectric image sensor and returning to the step two;
fifthly, carrying out data processing on the obtained dark field image data and the radiation image data to obtain a transient response image and a transient response experiment rule;
averaging output values of each pixel point of multi-frame dark field image data outside the radiation field to obtain a background noise image of the photoelectric image sensor, and subtracting the background noise image from the radiation image data in the radiation field to obtain a transient response image;
and performing edge detection on the transient response image to obtain the appearance characteristic of the transient response, drawing multi-frame transient response signal distribution curves under different conditions, and obtaining a transient response experiment rule.
2. The method for testing radiation transient response of photoelectric image sensor according to claim 1, wherein: in the first step, the integration time is determined according to the incident fluence rate or the incident dose rate of the radiation particles or rays, and the maximum integration time setting judgment standard is that the proportion of pixel units outputting transient response signals by the photoelectric image sensor is not more than 50%.
3. The method for testing radiation transient response of photoelectric image sensor according to claim 1, wherein: in the second step, the specific method for judging that the average output value of the image data is stable is as follows: after continuously collecting image data for a period of time, the internal temperature of the photoelectric image sensor changes by less than 0.1 ℃ within 1 minute or the output average dark signal changes by less than 2%.
4. The method for testing radiation transient response of photoelectric image sensor according to claim 1, wherein: in the second step, the shading treatment of the photoelectric image sensor specifically comprises the following steps: the light-shielding material is adopted to completely shield the photosensitive surface of the photoelectric image sensor, and the light-shielding material is lighttight light-shielding paper.
5. The method for testing radiation transient response of photoelectric image sensor according to claim 1, wherein: in the third step, under the same irradiation state, the number of frames of the acquired radiation image data is not less than 20 frames, and the radiation image data is generally stored in an 8-bit, 12-bit or 16-bit raw format.
6. The method for testing radiation transient response of photoelectric image sensor according to claim 1, wherein: in the third step, under the non-radiation field, the number of the collected data frames of the dark field image data is not less than 50 frames.
7. The method for testing radiation transient response of a photoelectric image sensor according to claim 1, wherein in the fourth step, the method for determining that the radiation has more serious damage to the photoelectric image sensor comprises: under the environment of a radiation field, a signal value corresponding to the highest point in the output signal statistical distribution graph of the photoelectric image sensor is increased; the method for judging the serious damage of the radiation particles to the photoelectric image sensor comprises the following steps: and under the radiation field environment, thermal pixels exceeding a set threshold exist in the output image.
8. The method for testing radiation transient response of photoelectric image sensor according to claim 1, wherein: the photoelectric image sensor is a charge coupled device or a CMOS image sensor.
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