CN113036585A - High-power semiconductor optical fiber coupling laser packaging method - Google Patents

High-power semiconductor optical fiber coupling laser packaging method Download PDF

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Publication number
CN113036585A
CN113036585A CN202110235297.XA CN202110235297A CN113036585A CN 113036585 A CN113036585 A CN 113036585A CN 202110235297 A CN202110235297 A CN 202110235297A CN 113036585 A CN113036585 A CN 113036585A
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CN
China
Prior art keywords
temperature
laser
power semiconductor
packaging
coupling
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Pending
Application number
CN202110235297.XA
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Chinese (zh)
Inventor
孔令昌
王志源
张苏南
李梦天
张深
石栋
丁才瀚
王彦楠
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Wuxi Ruike Fiber Laser Technology Co ltd
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Wuxi Ruike Fiber Laser Technology Co ltd
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Priority to CN202110235297.XA priority Critical patent/CN113036585A/en
Publication of CN113036585A publication Critical patent/CN113036585A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08Construction or shape of optical resonators or components thereof
    • H01S3/08059Constructional details of the reflector, e.g. shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/063Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067Fibre lasers
    • H01S3/06704Housings; Packages

Abstract

The invention provides a packaging method of a high-power semiconductor optical fiber coupling laser, which comprises the following steps: acquiring a target laser after the collimator is installed; carrying out first temperature circulation on the target laser to obtain the target laser after the first temperature circulation; and performing reflector coupling based on the target laser after the first temperature cycle so as to continue normal production after the reflector coupling. According to the packaging method of the high-power semiconductor optical fiber coupling laser, the temperature circulation step is added between the laser installation step and the reflector coupling step, the glue stress in the previous step is released, and the glue stress is released before the reflector coupling step, so that the change degree of the reflector coupling mechanical position is smaller during the second temperature circulation later, and the final coupling efficiency of the laser is improved.

Description

High-power semiconductor optical fiber coupling laser packaging method
Technical Field
The invention relates to the technical field of semiconductors, in particular to a packaging method of a high-power semiconductor optical fiber coupling laser.
Background
Along with the technical development of domestic industrial laser chips, the power of a single chip is higher and higher, the heat brought by the higher power is higher, and the heat dissipation is the factor influencing the reliability of the laser chip to the greatest extent. The packaging level requirements for chips are becoming higher and higher.
As shown in fig. 1, the existing laser builds the optical path of the laser after the solution is processed by pasting Slow Axis Collimation (SAC), Fast Axis Collimation (FAC), collimator installation and mirror coupling. And then the temperature cycling process releases the internal stress of the cured glue through high-temperature and low-temperature cycling. As the stress is released, the mechanical position of each glue-related station changes. As a result, the power of the laser decreases and the coupling efficiency decreases as the stress is released.
Disclosure of Invention
The invention provides a packaging method of a high-power semiconductor optical fiber coupling laser, which is used for improving the coupling efficiency of a finished product of the laser.
The invention provides a packaging method of a high-power semiconductor optical fiber coupling laser, which comprises the following steps:
acquiring a target laser after the collimator is installed;
carrying out first temperature circulation on the target laser to obtain the target laser after the first temperature circulation;
and performing mirror coupling based on the target laser after the first temperature cycle.
According to the packaging method of the high-power semiconductor optical fiber coupling laser, the temperature range of the first temperature cycle is-20 ℃ to 80 ℃.
The invention provides a packaging method of a high-power semiconductor optical fiber coupling laser, wherein the first temperature cycle comprises 20 temperature sub-cycles, and the time of each temperature sub-cycle is 1 hour.
The invention provides a high-power semiconductor optical fiber coupling laser packaging method, wherein a target laser based on first temperature circulation is continuously packaged and stored in a warehouse, and the method comprises the following steps:
and sequentially carrying out reflector coupling, pre-sealing cover testing, sealing cover, second temperature cycling, post-temperature cycling testing, aging, final testing and finally warehousing on the target laser after the first temperature cycling.
The invention provides a packaging method of a high-power semiconductor optical fiber coupling laser, which is used for obtaining a target laser after a collimator is installed and comprises the following steps:
and sequentially carrying out COS screening, base cleaning, COS welding on the base, slow axis pasting collimation, COS series routing, fast axis collimation, tube shell welding and collimator installation to obtain the target laser after the collimator is installed.
According to the packaging method of the high-power semiconductor optical fiber coupling laser, the temperature range of the second temperature cycle is-20 ℃ to 80 ℃.
According to the packaging method of the high-power semiconductor optical fiber coupling laser, the second temperature cycle comprises 20 temperature sub-cycles, and the time of each temperature sub-cycle is 1 hour.
According to the packaging method of the high-power semiconductor optical fiber coupling laser, the temperature circulation step is added between the laser installation step and the reflector coupling step, the glue stress in the previous step is released, and the glue stress is released before the reflector coupling step, so that the change degree of the reflector coupling mechanical position is smaller during the second temperature circulation later, and the coupling efficiency of the laser is improved.
Drawings
In order to more clearly illustrate the technical solutions of the present invention or the prior art, the drawings needed for the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a process flow of packaging a fiber coupled laser in the prior art;
FIG. 2 is a flowchart of a method for packaging a high power semiconductor fiber-coupled laser according to the present invention;
fig. 3 is a second flowchart of a packaging method for a high power semiconductor fiber-coupled laser according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a packaging process flow of an optical fiber coupling laser, which is modified on the original packaging process flow (shown in figure 1), and particularly, the laser is subjected to temperature circulation once after a collimator is installed and before a reflector is coupled.
The purpose of temperature cycling (hereinafter referred to as temperature cycling) is mainly to release the stress inside the laser, and along with the release of the stress, the SAC, the FAC, the collimating lens and the reflecting mirror which form the optical system will be mechanically changed, so that the built optical system will be damaged.
In view of the above problem, an embodiment of the present invention provides a novel method for packaging a high-power semiconductor fiber-coupled laser, as shown in fig. 2, the method includes:
210, obtaining a target laser after the collimator is installed;
220, performing a first temperature cycle on the target laser to obtain the target laser after the first temperature cycle;
and 230, performing mirror coupling based on the target laser after the first temperature cycle.
In the embodiment of the invention, temperature cycle is performed once after the collimator is installed and before the reflector is coupled, so that the stress is released in advance, wherein the stress mainly refers to the internal stress of glue for fixing SAC, FAC and the collimating lens in the previous step. And then, after the cover is sealed, the temperature is cycled again, the temperature cycle releases the glue stress for fixing the reflector, the glue stress related to the former position is released, and correspondingly, after the temperature cycle is performed for the second time, the amplitude of the mechanical position change of the reflector is reduced, so that the damage to the optical system is reduced, and the power of the final product is improved.
On the basis of the above embodiment, preferably, the temperature range of the first temperature cycle is-20 degrees celsius to 80 degrees celsius.
On the basis of the above embodiment, preferably, the first temperature cycle includes 20 temperature sub-cycles, and the time of each temperature sub-cycle is 1 hour.
Specifically, the temperature range of the temperature cycle in the embodiment of the invention is-20 ℃ to 80 ℃, the first temperature cycle comprises 20 temperature sub-cycles, the temperature of each temperature sub-cycle is cycled up and down in the range, and the time of each temperature sub-cycle is 1 hour.
On the basis of the foregoing embodiment, preferably, the continuing packaging and warehousing based on the target laser after the first temperature cycle includes:
and sequentially carrying out reflector coupling, pre-sealing cover testing, sealing cover, second temperature cycling, post-temperature cycling testing, aging, final testing and finally warehousing on the target laser after the first temperature cycling.
On the basis of the foregoing embodiment, preferably, the acquiring the target laser after the collimator is installed includes:
and sequentially carrying out COS screening, base cleaning, COS welding on the base, slow axis pasting collimation, COS series routing, fast axis collimation, tube shell welding and collimator installation to obtain the target laser after the collimator is installed.
An embodiment of the present invention provides a method for packaging a high power semiconductor fiber coupled laser, as shown in fig. 3, it can be seen from fig. 3 that the method for packaging a high power semiconductor fiber coupled laser is different from the conventional packaging method in that a temperature cycle is added after a collimator is mounted and before a reflector is coupled, since the first temperature cycle releases the glue stress in the previous step, and then mirror coupling operation, pre-capping test, capping, second temperature cycle, post-second temperature cycle test, and the like are performed, the second temperature cycle can release the internal stress of the fixed mirror glue, and the mechanical position of the mirror can be shifted by a small margin.
On the basis of the above embodiment, preferably, the temperature range of the second temperature cycle is-20 degrees celsius to 80 degrees celsius.
On the basis of the above embodiment, preferably, the second temperature cycle includes 20 temperature sub-cycles, and the time of each temperature sub-cycle is 1 hour.
Specifically, the temperature range of the second temperature cycle is-20-80 ℃, the second temperature cycle comprises 20 temperature sub-cycles, and the temperature range of each temperature sub-cycle is up and down wandering between-20 ℃ and 80 ℃.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (7)

1. A method for packaging a high-power semiconductor optical fiber coupling laser is characterized by comprising the following steps:
acquiring a target laser after the collimator is installed;
carrying out first temperature circulation on the target laser to obtain the target laser after the first temperature circulation;
and performing mirror coupling based on the target laser after the first temperature cycle.
2. The method for packaging a high-power semiconductor fiber-coupled laser according to claim 1, wherein the first temperature cycle has a temperature range of-20 to 80 degrees celsius.
3. The method for packaging a high-power semiconductor fiber-coupled laser according to claim 1, wherein the first temperature cycle comprises 20 temperature sub-cycles, and the time of each temperature sub-cycle is 1 hour.
4. The method for packaging a high-power semiconductor fiber-coupled laser according to any one of claims 1 to 3, wherein the step of continuing packaging and warehousing based on the target laser after the first temperature cycle comprises:
and sequentially carrying out reflector coupling, pre-sealing cover testing, sealing cover, second temperature cycling, post-temperature cycling testing, aging, final testing and finally warehousing on the target laser after the first temperature cycling.
5. The packaging method for high-power semiconductor fiber-coupled laser according to any one of claims 1 to 3, wherein the obtaining of the target laser after collimator installation comprises:
and sequentially carrying out COS screening, base cleaning, COS welding on the base, slow axis pasting collimation, COS series routing, fast axis collimation, tube shell welding and collimator installation to obtain the target laser after the collimator is installed.
6. The method for packaging a high-power semiconductor fiber-coupled laser according to claim 4, wherein the temperature of the second temperature cycle is in a range of-20 degrees Celsius to 80 degrees Celsius.
7. The packaging method for high-power semiconductor fiber-coupled laser according to claim 4, wherein the second temperature cycle comprises 20 temperature sub-cycles, and the time of each temperature sub-cycle is 1 hour.
CN202110235297.XA 2021-03-03 2021-03-03 High-power semiconductor optical fiber coupling laser packaging method Pending CN113036585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110235297.XA CN113036585A (en) 2021-03-03 2021-03-03 High-power semiconductor optical fiber coupling laser packaging method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110235297.XA CN113036585A (en) 2021-03-03 2021-03-03 High-power semiconductor optical fiber coupling laser packaging method

Publications (1)

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CN113036585A true CN113036585A (en) 2021-06-25

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1710762A (en) * 2005-06-29 2005-12-21 武汉电信器件有限公司 Method for raising semiconductor laser yield
US20060083276A1 (en) * 2004-09-28 2006-04-20 Snake Creek Lasers, Llc. Cryogenically cooled solid state lasers
CN102412500A (en) * 2011-11-30 2012-04-11 江苏飞格光电有限公司 Packaging method of semiconductor laser
CN104979749A (en) * 2015-06-25 2015-10-14 鞍山伟光力激光科技有限公司 High-power semiconductor fiber-coupled laser and coupling method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060083276A1 (en) * 2004-09-28 2006-04-20 Snake Creek Lasers, Llc. Cryogenically cooled solid state lasers
CN1710762A (en) * 2005-06-29 2005-12-21 武汉电信器件有限公司 Method for raising semiconductor laser yield
CN102412500A (en) * 2011-11-30 2012-04-11 江苏飞格光电有限公司 Packaging method of semiconductor laser
CN104979749A (en) * 2015-06-25 2015-10-14 鞍山伟光力激光科技有限公司 High-power semiconductor fiber-coupled laser and coupling method thereof

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Application publication date: 20210625

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