CN113035884B

CN113035884B - Three-dimensional memory and preparation method thereof

Info

Publication number: CN113035884B
Application number: CN202110243810.XA
Authority: CN
Inventors: 吴林春; 张坤; 周文犀
Original assignee: Yangtze Memory Technologies Co Ltd
Current assignee: Yangtze Memory Technologies Co Ltd
Priority date: 2021-03-05
Filing date: 2021-03-05
Publication date: 2022-07-29
Anticipated expiration: 2041-03-05
Also published as: CN113035884A; CN115206988A

Abstract

The application provides a preparation method of a three-dimensional memory. The method comprises the following steps: sequentially forming a stop layer and a laminated structure on a substrate; forming a channel hole penetrating through the laminated structure and extending to the substrate, and sequentially forming a functional layer and a channel layer on the inner wall of the channel hole to form a channel structure; removing the substrate and a part of the channel structure extending to the substrate to the stop layer through a grinding process; and forming a source layer on the side of the stop layer far away from the laminated structure to cover the end face of the channel structure far away from the laminated structure. The preparation method of the three-dimensional memory is beneficial to controlling the process uniformity in the process of removing the substrate, improving the doping uniformity of the channel layer, increasing the contact reliability of the doped channel layer and the source layer and improving the electrical performance of the prepared three-dimensional memory.

Description

Three-dimensional memory and preparation method thereof

Technical Field

The present application relates to the field of semiconductor technology, and more particularly, to a three-dimensional memory and a method for fabricating the same.

Background

In a process for fabricating a three-dimensional (3D) NAND memory, a channel structure having a memory function is generally formed by sequentially depositing a functional layer of a silicon oxide-silicon nitride-silicon oxide (ONO) structure and a polysilicon sacrificial layer in a stacked structure after forming a channel hole in the stacked structure.

With the increase of the number of stacked layers, in the step of removing the polysilicon sacrificial layer and the functional layer at the bottom of the channel hole by using a deep hole etching process to realize a circuit loop of the memory cell of the channel structure, for example, shift (shift) exists in Overlay precision windows (Overlay windows) of upper and lower layers of channel holes, which causes damage to the side wall of the functional layer at the joint of the upper and lower stacked structures, thereby affecting the electrical property of the final memory cell, and causing low yield or reliability failure of a Wafer test (Wafer Sort).

The structure of the non-deep hole etching (SONO Less) can avoid the process challenge of deep hole etching caused by the increase of the layer number of the three-dimensional memory. The BSS (Backside SONO Etch) structure can also avoid the problem that WL (Word Line) and ACS (Array Common Source) short-circuit leakage (short leakage) occur when a gate Line gap is filled with a conductive material, and can also avoid setting a pickup area of the ACS on the front side of the three-dimensional memory, so that the density of a storage area can be increased, and the cost can be reduced.

Most existing BSS structures remove the functional layer of the ONO structure at the bottom of the channel structure from the back of the substrate (the side away from the stacked structure) by using a mechanical chemical polishing (CMP) process to implement a circuit loop of the memory cell in the channel structure. In the process, the process uniformity is difficult to control, so that the subsequent preparation process of the three-dimensional memory and the electrical performance of the prepared three-dimensional memory are influenced.

Disclosure of Invention

The application provides a preparation method of a three-dimensional memory. The preparation method comprises the following steps: sequentially forming a stop layer and a laminated structure on a substrate; forming a channel hole penetrating through the laminated structure and extending to the substrate, and sequentially forming a functional layer and a channel layer on the inner wall of the channel hole to form a channel structure; removing the substrate and a part of the channel structure extending to the substrate to the stop layer through a grinding process; and forming a source layer on the side of the stop layer far away from the laminated structure to cover the end face of the channel structure far away from the laminated structure.

In some embodiments, the material of the stop layer may comprise polysilicon.

In some embodiments, the substrate may include a base, a first sacrificial silicon oxide layer, a sacrificial polysilicon layer, and a second sacrificial silicon oxide layer, which are sequentially stacked, wherein the removing of the substrate and a portion of the channel structure extending to the substrate to the stop layer by a grinding process includes: and sequentially removing the substrate, the first sacrificial silicon oxide layer, the sacrificial polysilicon layer and the second sacrificial polysilicon layer by a grinding process.

In some embodiments, the stacked structure may include a step region, and the method may further include: and forming a dummy channel structure penetrating at least part of the laminated structure and extending to the substrate in the step region.

In some embodiments, the stacked structure may include a plurality of gate dielectric layers and a plurality of gate sacrificial layers alternately stacked, and the method may further include: forming a gate gap penetrating through the laminated structure and extending to the substrate, wherein the gate gap has a distance with the channel structure; removing the gate sacrificial layer through the gate gap to form a sacrificial gap; forming a gate layer in the sacrificial gap; and filling a conductive material in the gate gap to form a gate gap structure.

In some embodiments, the step of forming the gate layer within the sacrificial gap may include: forming a grid barrier layer on the inner walls of the sacrificial gap and the grid gap; and forming an adhesive layer for adhering the gate electrode layer on the surface of the gate barrier layer in the sacrificial gap.

In some embodiments, the side of the substrate on which the stacked structure is formed includes a peripheral region formed of an insulating cover layer, and the method may further include: a through silicon contact structure is formed through the insulating cap layer and extending to the substrate in the peripheral region.

In some embodiments, the step of forming the through-silicon contact structure may comprise: a spacer layer is formed through the outer wall of the silicon contact structure.

In some embodiments, the method may further comprise: and removing the part of the dummy channel structure extending to the substrate, the part of the gate gap structure extending to the substrate and the part of the through silicon contact structure extending to the substrate.

In some embodiments, the step of forming a source layer on a side of the stop layer away from the stacked structure may include: and forming a source layer on the side of the stop layer far away from the laminated structure to cover the end face of the dummy channel structure far away from the laminated structure, the end face of the gate gap structure far away from the laminated structure and the end face of the silicon contact structure far away from the laminated structure.

In some embodiments, the forming the source layer may include: doping the stop layer and the part of the channel layer close to the stop layer; and forming a doped polysilicon layer on the side of the stop layer far away from the laminated structure and carrying out annealing treatment to form a source electrode layer.

In some embodiments, the step of forming the source layer may include: doping the stop layer and the part of the channel layer close to the stop layer; forming a polysilicon layer on one side of the stop layer far away from the laminated structure; and doping and annealing the polysilicon layer to form a source layer.

In some embodiments, the method may further comprise: an interlayer dielectric layer is formed on the source layer on a side thereof remote from the stacked structure.

In some embodiments, the step of forming the interlayer dielectric layer may include: forming a dielectric filling layer on one side of the source layer far away from the laminated structure; forming a back deep trench isolation structure penetrating through the source layer on the dielectric filling layer; removing a part of the dielectric filling layer corresponding to the channel structure and forming a first opening to expose the source electrode layer; and removing a portion of the dielectric fill layer corresponding to the through silicon contact structure and forming a second opening to expose the through silicon contact structure.

In some embodiments, the method may further comprise: and forming a metal interconnection layer on the side of the interlayer dielectric layer far away from the laminated structure.

In some embodiments, the step of forming the metal interconnect layer may include: filling a conductive material in the first opening and the second opening and covering the surface of the interlayer dielectric layer far away from the laminated structure so as to form a channel contact in the first opening and form a peripheral contact in the second opening; and forming an insulating spacer structure between the channel contact and the peripheral contact.

The application also provides a three-dimensional memory. The three-dimensional memory includes: a source layer; the laminated structure is positioned on one side of the source layer and comprises a grid dielectric layer and a grid layer which are alternately laminated; and a channel structure penetrating the stacked structure and extending to the source layer, the channel structure including: a dielectric core; a functional layer and a channel layer formed on an outer sidewall of the dielectric core from outside to inside in a radial direction; wherein a portion of the channel layer adjacent to the source layer contacts the source layer to electrically connect the source layer and the channel layer.

In some embodiments, the source layer may comprise a P-type or N-type doped polysilicon layer.

In some embodiments, the stacked structure includes a step region, and the three-dimensional memory may further include: a dummy channel structure extending through at least a portion of the stacked structure in the step region and extending to the source layer.

In some embodiments, the three-dimensional memory may further include: and a gate slit structure penetrating the stacked structure and extending to the source layer, wherein the gate slit structure has a distance from the channel structure.

In some embodiments, the gate slit structure may include: and a gate blocking layer formed on an outer side of the gate slit structure.

In some embodiments, the gate layer includes a gate barrier layer formed on an outer wall of the gate layer and an adhesion layer formed between the gate barrier layer and the gate layer.

In some embodiments, the three-dimensional memory may further include: a peripheral region formed of an insulating cover layer on one side of the substrate where the stacked structure is formed; and a through silicon contact structure extending through the insulating capping layer in the peripheral region and toward the source layer, wherein the through silicon contact structure is not in contact with the source layer.

In some embodiments, a spacer layer may be formed on an outer wall of the through silicon contact structure.

In some embodiments, the three-dimensional memory may further include: and an interlayer dielectric layer arranged at an interval on the side of the source layer far away from the laminated structure.

In some embodiments, the interlevel dielectric layer includes a back deep trench isolation structure penetrating through to the source layer in an area corresponding to the through silicon contact structure.

In some embodiments, the three-dimensional memory may further include a metal interconnection layer formed on a side of the interlayer dielectric layer away from the stacked structure, and the metal interconnection layer may include: a channel contact corresponding to the channel structure and contacting the source layer; a peripheral contact in contact with the through-silicon contact structure; and an insulating spacer structure between the channel contact and the peripheral contact.

According to the preparation method of the three-dimensional memory, the stop layer is added between the substrate and the laminated structure, so that the process uniformity in the process of removing the substrate is favorably controlled. And the CMP process is used for removing the substrate, the part of the channel structure extending to the substrate and the step of forming the source electrode layer in contact with the channel layer, so that the doping uniformity of the channel layer is improved, the contact reliability of the doped channel layer and the source electrode layer is improved, and the electrical performance of the prepared three-dimensional memory is improved.

Drawings

Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:

FIG. 1 is a flow chart of a method of fabricating a three-dimensional memory according to an embodiment hereof;

Fig. 2A to 2I are schematic process cross-sectional views illustrating a method for fabricating a three-dimensional memory according to an embodiment of the present disclosure; and

fig. 3 is a schematic structural cross-sectional view of a three-dimensional memory according to an embodiment of the present application.

Detailed Description

For a better understanding of the present application, various aspects of the present application will be described in more detail with reference to the accompanying drawings. It should be understood that the detailed description is merely illustrative of exemplary embodiments of the present application and does not limit the scope of the present application in any way.

The terminology used herein is for the purpose of describing particular example embodiments and is not intended to be limiting. The terms "comprises," "comprising," "includes" and/or "including," when used in this specification, specify the presence of stated features, integers, elements, components, and/or groups thereof, but do not preclude the presence or addition of one or more other features, integers, elements, components, and/or groups thereof.

This description is made with reference to schematic illustrations of exemplary embodiments. The exemplary embodiments disclosed herein should not be construed as limited to the particular shapes and dimensions shown, but are to include various equivalent structures capable of performing the same function, as well as deviations in shapes and dimensions that result, for example, from manufacturing. The locations shown in the drawings are schematic in nature and are not intended to limit the location of the various components.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

The application provides a method 1000 for manufacturing a three-dimensional memory. Fig. 1 is a flow chart of a method 1000 of fabricating a three-dimensional memory according to an embodiment of the present application. As shown in fig. 1, a method 1000 for manufacturing a three-dimensional memory includes:

s110, forming a stop layer and a laminated structure on the substrate in sequence;

s120, forming a channel hole penetrating through the laminated structure and extending to the substrate, and sequentially forming a functional layer and a channel layer on the inner wall of the channel hole to form a channel structure;

s130, removing the substrate and the part of the channel structure extending to the substrate to the stop layer through a grinding process; and

and S140, forming a source layer on the side, far away from the laminated structure, of the stop layer to cover the end face, far away from the laminated structure, of the channel structure.

Fig. 2A to 2I are schematic process cross-sectional views illustrating a method 1000 for manufacturing a three-dimensional memory according to an embodiment of the present disclosure. It should be understood that the steps shown in method 1000 are not exclusive and that other steps may be performed before, after, or between any of the steps shown. Further, some of the steps may be performed simultaneously or may be performed in an order different from that shown in fig. 1. The above steps S110 to S140 are further described below with reference to fig. 2A to 2I.

In step S110, a stop layer and a stacked structure are sequentially formed on a substrate.

In step S110, the substrate 110 may be used to support device structures thereon. The substrate 110 may include at least one of single crystal silicon (Si), single crystal germanium (Ge), a III-V compound semiconductor material, a II-VI compound semiconductor material, or other semiconductor materials known in the art.

In some embodiments, as shown in fig. 2A, the substrate 110 may be a composite substrate. Specifically, the composite substrate may sequentially form a first sacrificial silicon oxide layer 112, a sacrificial polysilicon layer 113, and a second sacrificial silicon oxide layer 114 on the base 111 using a thin film deposition process such as Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), Atomic Layer Deposition (ALD), or any combination thereof, to form the substrate 110.

Alternatively, the substrate 111 may include at least one of single crystal silicon (Si), single crystal germanium (Ge), a III-V compound semiconductor material, a II-VI compound semiconductor material, or other semiconductor materials known in the art. The material of the first sacrificial silicon oxide layer 112 may be silicon oxide, the material of the sacrificial polysilicon layer 113 may be polysilicon, and the material of the second sacrificial silicon oxide layer 114 may be silicon oxide.

The stop layer 115 may be formed on the substrate 110 using a thin film deposition process such as CVD, PVD, ALD, or any combination thereof. Alternatively, the stop layer 115 may be formed on a side of the substrate 110 away from the base 111. In other words, the stop layer 115 may be formed at a side close to the second sacrificial silicon oxide layer 114 in the substrate 110. The stop layer 115 may be used to stop polishing at this layer when the substrate is removed by a mechanical chemical polishing (CMP) process in the subsequent step S130.

In some embodiments, the material of the stop layer 115 may be selected to be the same as the sacrificial polysilicon layer 113 in the substrate 110.

The stacked structure 120 may include a plurality of gate dielectric layers 121 and a plurality of gate sacrificial layers 122 formed on the stop layer 115 in an overlapping and overlapping manner. The method of forming the stacked structure 120 may include a thin film deposition process such as CVD, PVD, ALD, or any combination thereof. In the stacked structure 120, the thicknesses of the gate dielectric layers 121 may be the same or different, and the thicknesses of the gate sacrificial layers 122 may be the same or different, and may be set according to specific process requirements. In addition, in the manufacturing process of the stacked structure 120, different stacking layers correspond to different stacking heights, for example, the number of stacked layers of the stacked structure 120 may be 8, 32, 64, 128, and the like, the greater the number of stacked layers of the stacked structure 120, the higher the integration level, the greater the number of memory cells formed therefrom, and the stacking layers and the stacking heights of the stacked structure 120 may be designed according to actual memory requirements, which is not particularly limited in the present application.

In some embodiments, the gate dielectric layer 121 and the gate sacrificial layer 122 may have different etching selectivity, and the gate sacrificial layer 122 may be removed in a subsequent process to form a sacrificial gap, and a conductive material is filled in a space of the sacrificial gap, i.e., the gate sacrificial layer 122, to form a gate layer, i.e., a word line. Alternatively, the material of gate dielectric layer 121 may include silicon oxide, and the material of gate sacrificial layer 122 may include silicon nitride.

It should be understood that, although the present application adopts an embodiment in which the gate sacrificial layer 122 is subsequently replaced by a filling conductive material to form a gate layer, the embodiment in which the gate layer is formed in the present application is not limited thereto, and may also be implemented, for example, by directly and alternately stacking a gate dielectric layer and a gate layer.

In some embodiments, a step structure may be formed at the edge of the stacked structure 120, and the step structure may be formed by performing a plurality of "trim-etch" cycles on the plurality of gate dielectric layers 121 and the plurality of gate sacrificial layers 122 of the stacked structure 120. The insulating cap layer 123 may be formed by filling a dielectric material over and covering the step structure. Alternatively, the insulating capping layer 123 may further extend toward the edge of the stacked structure 120, in other words, a dielectric material may be filled above the stop layer 115. The method of forming the insulating cap layer 123 may include a thin film deposition process such as CVD, PVD, ALD, or any combination thereof. The insulating cap layer 123 may be made of the same material as the gate dielectric layer 121, such as silicon oxide. Alternatively, the surface of the insulating cover layer 123 remote from the substrate 110 may be planarized using, for example, a CMP process.

After the above process, a region of the substrate 110 corresponding to the step-like structure formed by the stacked structure 120 may be referred to as a step region B, which may be an electrical connection region for providing a word line (gate layer). The area of the substrate 110 that is entirely corresponding to the insulating cap 123 may be referred to as a peripheral region C, which may be used to form through silicon contact structures that are electrically connected to peripheral circuitry during subsequent processing.

Step S120, forming a trench hole penetrating the stacked structure and extending to the substrate, and patterning the trench hole on the inner wall A functional layer and a channel layer to form a channel structure.

In step S120, a channel hole may be formed in the stacked structure 120 using, for example, a dry/wet etching process, and the channel hole may extend perpendicular to the substrate 110 and in a direction of the substrate 110. Specifically, the trench hole may extend to the sacrificial polysilicon layer 113 of the substrate 110, and the sacrificial polysilicon layer 113 may serve as an etch stop layer for controlling a variation of a notching (gouging) of the trench hole. For example, the etching of the channel hole may be stopped by the sacrificial polysilicon layer 113 without extending the channel hole further into the sacrificial silicon oxide layer 112 and the substrate 111.

In this step, as shown in fig. 2B, a charge blocking layer 1311, a charge trapping layer 1312, a tunneling layer 1313, and a channel layer 132 may be sequentially deposited along the inner wall of the channel hole using a thin film deposition process such as CVD, PVD, ALD, or any combination thereof. Among them, the charge blocking layer 1311, the charge trapping layer 1312 and the tunneling layer 1313 may be referred to as the functional layer 131. The materials of the charge blocking layer 1311, the charge trapping layer 1312, the tunneling layer 1313, and the channel layer 132 may sequentially include silicon oxide, silicon nitride, silicon oxide, and polysilicon to form a "SONO" structure.

In this step, a channel structure 130 having a channel layer 132 and a functional layer 131 may be formed by filling a dielectric material, for example, silicon oxide, in a channel hole in which the functional layer 131 and the channel layer 132 are formed using a thin film deposition process such as CVD, PVD, ALD, or any combination thereof. Optionally, one or more air gaps may be formed during the filling process to relieve structural stress by controlling the trench fill process.

In some embodiments, a channel plug 133 is formed at an end of the channel structure 130 remote from the substrate 110. The material of the channel plug 133 may be made of the same material as the channel layer 132, such as polysilicon. The channel plug 133 may serve as a drain of the channel structure 130.

It should be understood that, in this step, a plurality of channel structures 130 may be formed to extend through the stacked structure 120 and to the substrate 110, and the number and arrangement of the channel structures 130 may be prepared according to actual memory requirements. After the above processes, the region corresponding to the channel structure 130 formed on the substrate 110 through the stacked structure 120 may be referred to as a memory region a, which may be used to implement a memory function of a three-dimensional memory.

In some embodiments, a Dummy Channel structure 140(Dummy Channel Hole) may be formed in the step region B. Specifically, the dummy channel structure 140 may vertically penetrate a portion of the stacked structure 120 in the step region B and extend into the sacrificial polysilicon layer 113 of the substrate 110. The dummy channel structures 140 may extend into the sacrificial polysilicon layer 113 to the same depth as the channel structures 130 or to a different depth. In the step of forming the dummy channel structure 140, a dielectric material, such as silicon oxide, may be filled in the channel hole where the dummy channel structure 140 is to be formed by using a thin film deposition process, such as CVD, PVD, ALD, or any combination thereof, to form the dummy channel structure 140. Optionally, one or more air gaps may be formed during the filling process to relieve structural stress by controlling the trench fill process. In the embodiments of the present application, the dummy channel structure 140 may be used to provide a mechanical support function without forming a functional layer and a channel layer having a memory function.

In some embodiments, a cap layer 124 may be formed on a side of the stacked structure 120 away from the substrate 110 by using a thin film deposition process to cover end faces of the channel structure 130 and the dummy channel structure 140 away from the substrate 110. The cap layer 124 may be made of the same material as the oxide cap layer 123, such as silicon oxide.

In some embodiments, the method 1000 for manufacturing a three-dimensional memory may further include a step of forming a gate layer and a gate slit structure by "gate replacement". Specifically, the step may include: forming a gate gap penetrating through the laminated structure and extending to the substrate, wherein the gate gap has a distance with the channel structure; removing the gate sacrificial layer through the gate gap to form a sacrificial gap; forming a gate layer in the sacrificial gap; and filling a conductive material in the gate gap to form a gate gap structure.

In the step of forming a gate gap extending through the stacked structure and to the substrate, the gate gap may be an opening in the sacrificial polysilicon layer 113 that is spaced apart from the channel structure 130 and extends through the stacked structure 120 to the substrate 110, as shown in fig. 2C. The gate gap may be formed using, for example, a dry/wet etch process. In addition, the gate gap may extend into the sacrificial polysilicon layer 113 to the same depth as or different from the channel structure 130.

In the step of removing the gate sacrificial layer through the gate slits to form the sacrificial gaps, all of the gate sacrificial layer 122 in the stacked structure 120 may be removed by, for example, a wet etching process using the gate slits formed after the above-mentioned process as a passage of an etchant to form a plurality of sacrificial gaps.

In the step of forming the gate layer within the sacrificial gap, a thin film deposition process such as CVD, PVD, ALD, or any combination thereof may be used to form the gate layer 125 within the sacrificial gap. The gate layer 125 may be made of a conductive material such as any one or a combination of tungsten, cobalt, copper, aluminum, doped crystalline silicon, or silicide.

Alternatively, the gate blocking layer 126 may be formed on the inner walls of the gate slits and the plurality of sacrificial slits using a thin film deposition process before the step of forming the gate layer in the sacrificial slits. Further, a thin film deposition process may be used to form an adhesion layer 127 on the surface of the gate blocking layer 126 within the sacrificial gap. The material of the gate blocking layer 126 may include a high dielectric constant material such as aluminum oxide. The material of adhesion layer 127 may include, for example, tantalum nitride or titanium nitride. The adhesion layer 127 helps to increase adhesion between the gate barrier layer 126 and the gate layer 125 formed during subsequent processes.

Alternatively, after the step of forming the adhesion layer 127 of the gate blocking layer 126, the adhesion layer 127 and a portion of the gate layer 125 near the gate gap may be removed using, for example, a wet etching process to form a groove in the gate gap, but the embodiment of the present application is not limited thereto. In other embodiments, the filled gate layer 125 may be aligned with the inner sidewalls of the gate gap without forming a recess. At this point, a gate blocking layer 126 and an adhesive layer 127 are sequentially deposited on the inner wall of the sacrificial gap and filled with a gate layer 125.

In the step of filling the gate gap with a conductive material to form the gate gap structure, one or more conductive materials, such as any one or a combination of tungsten, cobalt, copper, aluminum, and doped polysilicon, may be selected to fill the gate gap to form the gate gap structure 150.

Alternatively, before the step of filling the gate gap with the conductive material, an isolation layer (not shown) may be formed on the inner wall of the gate gap where the gate blocking layer 126 is formed by using a thin film deposition process to cover the inner wall of the gate gap and the end portion of the gate layer 125 facing the gate gap. The isolation layer may be made of the same material as the gate blocking layer 126 or a different material, such as titanium nitride. Tungsten may then be filled in the gate gap covered with the gate barrier layer 126 and the spacer layer using a thin film deposition process. Alternatively, a thin film deposition process may be used to fill tungsten in the bottom of the gate gap and doped polysilicon in the top space in the gate gap.

Optionally, one or more air gaps may be formed during the filling process to relieve structural stress by controlling the trench fill process. The gate slit structure 150 may effectively reduce the deformation of the storage region a and provide good support for the storage region a.

In some embodiments, the method 1000 for manufacturing a three-dimensional memory further comprises: and forming a through silicon contact structure in the peripheral region, wherein the through silicon contact structure penetrates through the insulating covering layer and extends to the substrate. In this step, as shown in fig. 2D, the through silicon contact structure 160 may vertically penetrate the insulating capping layer 123 and extend into the sacrificial polysilicon layer 113 of the substrate 110 in the peripheral region C. The depth extending through the silicon contact structure 160 into the sacrificial polysilicon layer 113 may be the same as or different from the channel structure 130. The through-silicon contact structures 160 may be used for electrical connection with peripheral circuitry, and the number and arrangement thereof may be prepared according to actual requirements.

In this step, a through silicon contact hole vertically penetrating the insulating capping layer 123 and extending to the sacrificial polysilicon layer 113 may be formed using a dry/wet etching process. A thin film deposition process may then be employed to fill the through-silicon contact holes with a conductive material, such as tungsten, cobalt, copper, aluminum, etc., to form the through-silicon contact structure 160. Furthermore, the cross-section through silicon contact structure 160 may be circular, square, or other shapes.

Alternatively, a thin film deposition process such as CVD, PVD, ALD, or any combination thereof may be employed to deposit, for example, titanium nitride on the inner walls of the through silicon contact holes to form the spacer layer 161 of the through silicon contact 160 prior to the step of filling the through silicon contact holes with the conductive material.

In step S130, the substrate and the portion of the channel structure extending to the substrate to the stop layer are removed by a grinding process.

In S130, the semiconductor structure formed in fig. 2D may be turned over by 180 ° and processed from the backside of the substrate 110. Specifically, the base 111 of the substrate 110 may be removed using a process such as CMP, dry/wet etching. Further, the first sacrificial silicon oxide layer 112 may be removed using, for example, a CMP process, and the sacrificial polysilicon layer 113 may serve as a stop layer for the CMP process to remove the first sacrificial silicon oxide layer 112.

Further, the sacrificial polysilicon layer 113 of the substrate 110 and the portion of the channel structure 130 extending to the sacrificial polysilicon layer 113 of the substrate 110 may be removed using, for example, a CMP process, and the second sacrificial silicon oxide layer 114 may serve as a stop layer for the CMP process to remove the sacrificial polysilicon layer 113, so that the polishing stops at the second sacrificial silicon oxide layer 114.

Further, the second sacrificial silicon oxide layer 114 of the substrate 110 and the portion of the channel structure 130 extending to the second sacrificial silicon oxide layer 114 of the substrate 110 may be removed using, for example, a CMP process, and the stop layer 115 may stop the polishing at this layer.

After the above processes, the end surface of the channel structure 130 far away from the stacked structure 120 may be flush with the surface of the stop layer 115 where the CMP process stops. By adding the composite substrate structure and the stop layer, the process uniformity in the substrate removing process is favorably controlled.

In some embodiments, portions of dummy channel structures 140 extending to substrate 110, portions of gate slit structures 150 extending to substrate 110, and portions of through silicon contact structures 160 extending to substrate 110 may be removed using, for example, a CMP process. And the stop layer 115 may stop polishing at that layer. The semiconductor structure processed by the process of step S130 is shown in fig. 2E.

In step S140, a source layer is formed on the stop layer away from the stacked structure to cover the channel structure End face of laminated structure

In step S140, as shown in fig. 2F, a polysilicon layer 171 may be deposited on the side of the stop layer 115 away from the stacked structure 120 by using a thin film deposition process such as CVD, PVD, ALD or any combination thereof to cover the end surface of the channel structure 130 away from the stacked structure 120 after being processed by the step S130 process. The polysilicon layer 171 and the stop layer 115 may collectively serve as a source layer 170.

In some embodiments, when the stop layer 115 and the channel layer 132 are made of the same material polysilicon, the stop layer 115 and the portion of the channel layer 132 in the channel structure 130 near the stop layer 115 may be doped by implanting a first dopant of P-type or N-type using, for example, an ion implantation process. Further, a polysilicon layer 171 doped with a first dopant may be deposited on the side of the stop layer 115 away from the stack structure 120 by a thin film deposition process such as CVD, PVD, ALD, or any combination thereof, and a laser annealing process may be used to repair the lattice damage of the material caused by the ion implantation process and activate the implanted first dopant to form the source layer 170, for example

In some embodiments, when the stop layer 115 and the channel layer 132 are made of the same material polysilicon, the stop layer 115 and a portion of the channel layer 132 of the channel structure 130 near the stop layer 115 may be subjected to a first dopant doping process of implanting P-type or N-type using, for example, an ion implantation process. Further, a thin film deposition process such as CVD, PVD, ALD, or any combination thereof may be employed to deposit the undoped polysilicon layer 171 on the side of the stop layer 115 away from the stack structure 120. Then, the polysilicon layer 171 may be doped by implanting a first dopant using, for example, an ion implantation process, and the lattice damage of the material caused by the ion implantation process and activating the implanted first dopant may be repaired using, for example, a laser annealing process to form the source layer 170.

After this step, the source layer 170 may contact and electrically connect with a portion of the channel layer 132 of the channel structure 130 near the stop layer 115. It is advantageous to control the doping position to the portion of the channel layer 132 near the stop layer 115 through the two doping processes.

According to the method 1000 for manufacturing the three-dimensional memory of the embodiment of the application, by removing the portion of the channel structure extending to the substrate and forming the source layer, the uniformity of doping of the channel layer is improved, the reliability of contact between the doped channel layer and the source layer is improved, and the electrical performance of the manufactured three-dimensional memory is improved.

In some embodiments, the source layer 170 may cover the end surface of the dummy channel structure 140 near the stop layer 115, the end surface of the gate slit structure 150 near the stop layer 115, and the end surface of the through silicon contact structure 160 near the stop layer 115 after the processing of step S130.

The method 1000 for manufacturing a three-dimensional memory further includes: and forming an interlayer dielectric layer on the side of the source layer far away from the laminated structure.

In this step, as shown in fig. 2G, a dielectric material, such as silicon oxide, may be filled in the source layer 170 on the side away from the stacked-layer structure 120 by, for example, a high-density plasma chemical vapor deposition process, so as to form a dielectric filling layer 181. Optionally, a CMP process may be used to planarize the surface of the dielectric fill layer 181 away from the stack 120.

Further, a dry/wet etch process may be used to remove the portion of the dielectric fill layer 181 corresponding to the area of the through silicon contact structure 160 and the portion of the source layer 170 corresponding to the area of the through silicon contact structure 160, and stop the etch at the insulating cap 123, thereby exposing the through silicon contact structure 160. After the above operations, a recess opening corresponding to the silicon contact structure 160 may be formed through the fill dielectric layer 181 and the source layer 170. A thin film deposition process may then be used to fill the recessed opening with one or more dielectric materials to form an isolation region E corresponding to the through silicon contact structure, as shown in fig. 2H.

Optionally, a dielectric material, such as a high-k dielectric material, different from the dielectric fill layer 181 may be deposited on the inner sidewalls of the recessed openings to form the backside deep trench isolation structures 182. The isolation region E defined by the back deep trench isolation structure 182 is then filled with the same dielectric material, such as silicon oxide, as the dielectric fill layer 181.

After the above-described processing, the through silicon contact structure 160 may not be in contact with the source layer 170, and the back deep trench isolation structure 182 may provide physical isolation for the through silicon contact structure 160.

Further, a dry/wet etching process may be used to remove the portion of the dielectric fill layer 180 corresponding to the channel structure 130 and stop the etching on the source layer 170, thereby exposing the portion of the source layer 170 corresponding to the channel structure 130. After the above-mentioned processes, a concave first opening 183 penetrating the filling dielectric layer 181 corresponding to the channel structure 130 may be formed.

Further, a dry/wet etch process may be used to remove the filled portion of the dielectric material in the isolation region E corresponding to the through silicon contact structure 160 and stop the etch at the insulating cap 123 to expose the end of the through silicon contact structure 190. After the above operations, a concave second opening 184 corresponding to the through silicon contact structure 160 in the through isolation region E may be formed.

After the above-described process, a spaced apart interlayer dielectric layer 180 may be formed, and an interlayer dielectric (ILD) layer 180 (also referred to as an "inter-metal dielectric (IMD) layer") may include one or more spaced apart regions of dielectric material and may provide insulating spacers for metal interconnect layers formed during subsequent processes.

The method 1000 for manufacturing the three-dimensional memory further includes: and forming a metal interconnection layer on one side of the interlayer dielectric layer far away from the laminated structure.

In this step, a thin film deposition process such as CVD, PVD, ALD, or any combination thereof may be used to fill the first opening 183 and the second opening 184 with a conductive material such as tungsten, cobalt, copper, aluminum, etc., respectively, and cover the surface of the interlayer dielectric layer 180 away from the stacked structure 120. After the above processes, a channel contact 191 may be formed in the first opening 183, and the channel contact 191 may contact the source layer 170, so that the channel structure 130 in contact with the source layer 170 may be electrically connected. In addition, the channel contact 191 can also be used as a Pick-up region (Pick up Area) of an array common source of the three-dimensional memory, and the array common source is led out from the back of the wafer, which is beneficial to saving storage space. In addition, peripheral contacts 192 may be formed within second openings 184, and peripheral contacts 192 may make contact with through-silicon contact structures 160, thereby making electrical connections to through-silicon contact structures 160, as shown in fig. 2I.

Further, an opening, i.e., an insulating spacer structure 193, may be formed between the channel contact 191 and the peripheral contact 192 covered with the conductive material using a dry/wet etching process to achieve insulating isolation between the channel contact 191 and the peripheral contact 192. Optionally, a thin film deposition process may be used to fill the opening with a dielectric material, such as silicon oxide, to further avoid crosstalk between the channel contact 191 and the peripheral contact 192 when receiving and transmitting signals.

The present application further provides a three-dimensional memory 100. The three-dimensional memory 100 can be obtained by any of the manufacturing methods described in the above embodiments. Fig. 3 is a schematic structural diagram of a three-dimensional memory 100 according to an embodiment of the application. As shown in fig. 3, the three-dimensional memory 100 may include: a source layer 170, a stack structure 120, and a channel structure 130.

The material of the source layer 170 may include, for example, P-type or N-type doped polysilicon. The source layer 170 may provide support for a device structure, such as the stack structure 120, disposed thereon, on the one hand, and may be used to electrically connect a device structure, such as the channel structure 130, in contact therewith, on the other hand.

The stacked structure 120 is located on one side of the source layer 170, and includes a gate dielectric layer 121 and a gate layer 125 stacked alternately. The stack 120 may be formed using a "gate replacement" method as described above. In other embodiments, the stacked-layer structure 120 may also be formed by overlapping deposition of the gate dielectric layer 121 and the gate layer 125 through a thin film deposition process. Specifically, the material of the gate dielectric layer 121 may include silicon oxide, and the material of the gate layer 125 may include tungsten. The gate layer 125 may function as a word line of the three-dimensional memory 100.

The channel structure 130 may extend through the stack 120 and to the source layer 170, and the channel structure 130 may include: a dielectric core; a functional layer 131 and a channel layer 132 formed on the outer sidewall of the dielectric core from the outside to the inside in the radial direction. And a portion of the channel layer 132 near the source layer 170 contacts the source layer 170 to electrically connect the source layer 170 and the channel layer 132.

In some embodiments, the edge of the stacked structure 120 may be formed with a step-like structure to form the step region B. In the step area B, the three-dimensional memory 100 may further include: a dummy channel structure 140 extending through at least a portion of the stacked structure 120 and extending to the source layer 170.

In some embodiments, the three-dimensional memory 100 may further include: a gate slit structure 150 spaced apart from the channel structure 130, extending through the stack 120 and to the source layer 170.

In some embodiments, a gate barrier layer 126 is formed on the outer wall of the gate slit structure 150.

In some embodiments, a gate blocking layer 126 is formed on an outer wall of the gate layer 125, and an adhesion layer 127 is formed between the gate blocking layer 126 and the gate layer 125.

In some embodiments, the insulating cover layer 123 may be formed by covering the step-like structure on the side of the substrate on which the stacked structure 120 is formed, and further extending toward the edge of the stacked structure 120. And an area corresponding to only the insulating cover 123 may be referred to as a peripheral area C. The three-dimensional memory 100 may include: a through silicon contact structure 160 penetrating the insulating capping layer 123 in the peripheral region C and extending in a direction of the source layer 170, and the through silicon contact structure 160 does not contact the source layer 170.

In some embodiments, a spacer layer 161 is formed on the outer wall of the through silicon contact structure 160.

In some embodiments, the three-dimensional memory 100 may include: an interlayer dielectric layer 180 is disposed at an interval on a side of the source layer 170 away from the stacked structure 120.

In some embodiments, the interlayer dielectric layer 180 may include: a back deep trench isolation structure 182 extending through to the source layer 170 in an area corresponding to the through silicon contact structure 160.

In some embodiments, the three-dimensional memory 100 may include: and a metal interconnection layer 190 formed on a side of the interlayer dielectric layer 180 away from the stacked structure 120. The metal interconnection layer 190 may include: a channel contact 191 corresponding to the channel structure 130 and contacting the source layer 170; peripheral contacts 192 in contact with through silicon contact structure 160; and an insulating spacer structure 193 located between channel contact 191 and peripheral contact 192.

Since the contents and structures referred to in the above description of the method 1000 may be fully or partially applicable to the three-dimensional memory described herein, the contents related or similar thereto will not be described in detail.

The above description is only a preferred embodiment of the present application and is illustrative of the principles of the technology employed. It will be appreciated by a person skilled in the art that the scope of the invention as referred to in the present application is not limited to the embodiments with a specific combination of the above-mentioned features, but also covers other embodiments with any combination of the above-mentioned features or their equivalents without departing from the inventive concept. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.

Claims

1. A method of fabricating a three-dimensional memory, the method comprising:

sequentially forming a stop layer and a laminated structure on a substrate;

forming a channel hole penetrating through the laminated structure and extending to the substrate, and sequentially forming a functional layer and a channel layer on the inner wall of the channel hole to form a channel structure;

removing the substrate and a portion of the channel structure extending to the substrate to the stop layer by a grinding process;

carrying out doping treatment on the stop layer and the part of the channel layer close to the stop layer; and

and forming a source layer comprising a polycrystalline silicon layer on one side of the stop layer far away from the laminated structure so as to cover the end face of the channel structure far away from the laminated structure.

2. The method of claim 1, wherein the material of the stop layer comprises polysilicon.

3. The method according to claim 1, wherein the substrate comprises a base, a first sacrificial silicon oxide layer, a sacrificial polysilicon layer, and a second sacrificial silicon oxide layer stacked in this order, and wherein the step of removing the substrate and the portion of the channel structure extending to the substrate to the stop layer by a grinding process comprises:

And sequentially removing the substrate, the first sacrificial silicon oxide layer, the sacrificial polysilicon layer and the second sacrificial silicon oxide layer by a grinding process.

4. The production method according to any one of claims 1 to 3, wherein the laminated structure includes a step region, the method further comprising:

and forming a virtual channel structure which penetrates through at least part of the laminated structure and extends to the substrate in the step region.

5. The method of manufacturing according to claim 4, wherein the stacked structure includes a plurality of gate dielectric layers and a plurality of gate sacrificial layers stacked alternately, the method further comprising:

forming a gate gap penetrating through the stacked structure and extending to the substrate, wherein the gate gap has a distance from the channel structure;

removing the gate sacrificial layer through the gate gap to form a sacrificial gap;

forming a gate layer in the sacrificial gap; and

and filling a conductive material in the gate gap to form a gate gap structure.

6. The method of claim 5, wherein the step of forming a gate layer in the sacrificial gap comprises:

Forming a grid barrier layer on the sacrificial gap and the inner wall of the grid gap; and

and forming an adhesive layer for adhering the gate electrode layer on the surface of the gate barrier layer in the sacrificial gap.

7. The production method according to claim 5 or 6, wherein the side of the substrate on which the laminated structure is formed includes a peripheral region formed of an insulating cover layer, the method further comprising:

a through silicon contact structure is formed through the insulating capping layer and extending to the substrate in the peripheral region.

8. The method of manufacturing of claim 7, wherein the step of forming the through-silicon contact structure comprises:

and forming a spacer layer on the outer wall of the through silicon contact structure.

9. The method of manufacturing according to claim 8, further comprising:

removing a portion of the dummy channel structure extending to the substrate, a portion of the gate slit structure extending to the substrate, and a portion of the through silicon contact structure extending to the substrate.

10. The method of claim 9, wherein forming a source layer on a side of the stop layer away from the stacked structure comprises:

And forming a source layer on one side of the stop layer far away from the laminated structure, so that the source layer covers the end face of the dummy channel structure far away from the laminated structure, the end face of the gate gap structure far away from the laminated structure and the end face of the through silicon contact structure far away from the laminated structure.

11. The method of claim 1 or 10, wherein forming the source layer comprises:

and forming the doped polysilicon layer on one side of the stop layer far away from the laminated structure and carrying out annealing treatment to form a source layer.

12. The method of claim 1 or 10, wherein forming the source layer comprises:

forming the polysilicon layer on one side of the stop layer far away from the laminated structure; and

and doping and annealing the polysilicon layer to form a source electrode layer.

13. The method of manufacturing according to claim 10, further comprising: and forming an interlayer dielectric layer on the side of the source layer far away from the laminated structure.

14. The method of claim 13, wherein the step of forming the interlayer dielectric layer comprises:

Forming a dielectric filling layer on one side of the source layer far away from the laminated structure;

forming a back deep trench isolation structure through the source layer in the dielectric fill layer;

removing a portion of the dielectric filling layer corresponding to the channel structure and forming a first opening to expose the source layer; and

and removing a part of the dielectric filling layer corresponding to the through silicon contact structure and forming a second opening to expose the through silicon contact structure.

15. The method of manufacturing according to claim 14, further comprising:

and forming a metal interconnection layer on one side of the interlayer dielectric layer far away from the laminated structure.

16. The method of claim 15, wherein the step of forming the metal interconnect layer comprises:

filling a conductive material in the first opening and the second opening and covering the surface of the interlayer dielectric layer far away from the laminated structure so as to form a channel contact in the first opening and a peripheral contact in the second opening; and

an insulating spacer structure is formed between the channel contact and the peripheral contact.

17. A three-dimensional memory, comprising:

a source layer including a stop layer and a polysilicon layer;

the laminated structure is positioned on one side of the source layer and comprises a grid dielectric layer and a grid layer which are alternately laminated; and

a channel structure extending through the stack structure and to the source layer, the channel structure comprising:

a dielectric core;

a functional layer and a channel layer formed on an outer sidewall of the dielectric core from outside to inside in a radial direction;

wherein a portion of the channel layer near the source layer is in contact with the source layer to electrically connect the source layer and the channel layer, and a doping concentration of the portion of the channel layer near the source layer is greater than a doping concentration of a portion of the channel layer away from the source layer; and

the surface of the stop layer, which is far away from the laminated structure, is flush with the end face of the channel structure, which is far away from the laminated structure, and the polycrystalline silicon layer covers the end face of the channel structure, which is far away from the laminated structure.

18. The three-dimensional memory of claim 17, wherein the source layer comprises the polysilicon layer doped P-type or N-type.

19. The three-dimensional memory according to claim 18, wherein the stacked structure comprises a step region, the three-dimensional memory further comprising: a dummy channel structure in the step region, penetrating at least a portion of the stacked structure and extending to the source layer.

20. The three-dimensional memory according to claim 19, further comprising: a gate slit structure penetrating the stack structure and extending to the source layer, wherein the gate slit structure is spaced apart from the channel structure.

21. The three-dimensional memory according to claim 20, wherein the gate slit structure comprises: and the grid barrier layer is formed on the outer wall of the grid gap structure.

22. The three-dimensional memory according to claim 21, wherein the gate layer comprises: a gate blocking layer formed on an outer wall of the gate layer, and an adhesive layer formed between the gate blocking layer and the gate layer.

23. The three-dimensional memory according to any one of claims 19 to 22, further comprising:

a peripheral region formed of an insulating cover layer on one side of the substrate on which the stacked structure is formed; and

A through silicon contact structure extending through the insulating capping layer in the peripheral region and in a direction of the source layer, wherein the through silicon contact structure is not in contact with the source layer.

24. The three-dimensional memory according to claim 23, wherein a spacer layer is formed on an outer wall of the through silicon contact structure.

25. The three-dimensional memory according to claim 24, further comprising: and the interlayer dielectric layer is arranged at an interval on one side of the source layer far away from the laminated structure.

26. The three-dimensional memory according to claim 25, wherein the interlayer dielectric layer comprises: a back deep trench isolation structure penetrating to the source layer in an area corresponding to the through silicon contact structure.

27. The three-dimensional memory according to claim 26, further comprising a metal interconnect layer formed on a side of the interlayer dielectric layer remote from the stacked structure, the metal interconnect layer comprising:

a channel contact corresponding to the channel structure and contacting the source layer;

a peripheral contact in contact with the through silicon contact structure; and

An insulating spacer structure between the channel contact and the peripheral contact.