CN113035723B - High-temperature-resistant packaging method for silicon carbide diode - Google Patents
High-temperature-resistant packaging method for silicon carbide diode Download PDFInfo
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- CN113035723B CN113035723B CN202110139398.7A CN202110139398A CN113035723B CN 113035723 B CN113035723 B CN 113035723B CN 202110139398 A CN202110139398 A CN 202110139398A CN 113035723 B CN113035723 B CN 113035723B
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052709 silver Inorganic materials 0.000 claims abstract description 45
- 239000004332 silver Substances 0.000 claims abstract description 45
- 239000004020 conductor Substances 0.000 claims abstract description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000741 silica gel Substances 0.000 claims abstract description 31
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 31
- 239000000919 ceramic Substances 0.000 claims abstract description 26
- 239000000499 gel Substances 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 238000007747 plating Methods 0.000 claims abstract description 4
- 239000003292 glue Substances 0.000 claims description 9
- 238000003466 welding Methods 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000000084 colloidal system Substances 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 4
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 239000005022 packaging material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 64
- 239000012790 adhesive layer Substances 0.000 abstract description 13
- 230000008569 process Effects 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000013464 silicone adhesive Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
Abstract
The invention provides a high-temperature resistant packaging method of a silicon carbide diode, which comprises the following steps: plating an anticorrosive conductive material on the surface of the lead frame; buckling a conductive layer forming die on the ceramic plate; firstly, injecting heat-conducting silica gel into the annular groove, and then injecting conductive silver gel into the central hole; removing the conductive layer forming mold, and placing the first lead on the heat-conducting silica gel and the conductive silver gel; pasting a chip, and flattening the heat-conducting silica gel and the conductive silver gel; coating a conductive material on the top of the chip, and pressing the second lead into the chip; curing; the first lead is bonded with the first lead, and the second lead is bonded with the second lead; and (5) plastic packaging. The first conducting layer positioned below the chip comprises a conducting silver adhesive layer and a conducting silicon adhesive layer surrounding the conducting silver adhesive layer, so that short circuit caused by overflow of conducting materials in the process of dispensing and wiring at the top of the chip can be effectively avoided.
Description
Technical Field
The invention relates to processing of a silicon carbide diode, and particularly discloses a high-temperature-resistant packaging method of a silicon carbide diode.
Background
The silicon carbide diode is a semiconductor device obtained by packaging a silicon carbide wafer, and has the advantages of large forbidden band width, high critical breakdown field strength, large thermal conductivity, high saturated electron offset speed, low dielectric constant and the like.
The silicon carbide diode mainly comprises a direct insertion type packaging structure and a patch type packaging structure, the patch type silicon carbide diode is commonly used in modern portable electronic products, the silicon carbide diode mainly comprises a packaging body, a chip and two pins, the firmness of the internal structure is improved, the silicon carbide diode is bonded with the two pins in the chip in a thermal ultrasonic welding mode, a large amount of heat can be generated in the bonding process, and the performance of the chip in the silicon carbide diode is easily influenced.
Disclosure of Invention
Therefore, in order to solve the problems in the prior art, it is necessary to provide a high temperature resistant packaging method for a silicon carbide diode, which can effectively protect a chip from high temperature, and the internal structure of the finally obtained silicon carbide diode is stable and reliable.
In order to solve the problems of the prior art, the invention discloses a high-temperature-resistant packaging method of a silicon carbide diode, which comprises the following steps:
s1, coating a film, namely putting the lead frame into a vacuum chamber, filling inert gas into the vacuum chamber, and plating an anticorrosive conductive material on the surface of the lead frame to form an anticorrosive conductive layer;
s2, heating the ceramic plate by a hot plate, buckling a conductive layer forming mold on the ceramic plate, wherein the conductive layer forming mold is internally provided with an annular groove and a central hole, and the annular groove surrounds the periphery of the central hole;
s3, injecting glue, namely injecting heat-conducting silica gel into the annular groove, and then injecting conductive silver glue into the central hole;
s4, primary wiring, removing the conductive layer forming mold, and placing a first lead on the heat-conducting silica gel and the conductive silver colloid, wherein one end of the first lead is positioned in the conductive silver colloid;
s5, pasting a chip, pressing the chip on the heat-conducting silica gel and the conductive silver gel, flattening the heat-conducting silica gel and the conductive silver gel between the chip and the ceramic plate to form a conductive silver gel layer and a heat-conducting silica gel layer, wherein the heat-conducting silica gel layer is connected around the conductive silver gel layer, the conductive silver gel layer is positioned in the projection of the chip on the ceramic plate, and the projection of the chip on the ceramic plate is positioned in the heat-conducting silica gel layer;
s6, secondary wiring, coating a conductive material on the top of the chip to form a conductive material layer, and pressing one end of the second lead into the conductive material layer;
s7, curing, namely curing the heat-conducting silica gel layer, the conductive silver glue layer and the conductive material layer, wherein the conductive silica gel layer and the conductive silver glue layer form a first conductive layer, and the conductive material layer forms a second conductive layer;
s8, bonding, namely placing the first lead and the second lead in the lead frame on two sides of the ceramic plate, bonding and connecting one end of the first lead, which is far away from the chip, with the first lead in a thermosonic welding mode, and bonding and connecting one end of the second lead, which is far away from the chip, with the second lead in a thermosonic welding mode to obtain an internal structural component;
and S9, plastic packaging, namely, after the internal structural part is placed in a plastic packaging forming die, injecting a plastic packaging material and curing to obtain the silicon carbide diode.
Further, in step S1, the inert gas filled in the vacuum chamber is nitrogen and/or argon.
Further, in step S1, the anti-corrosion conductive material is a palladium silver layer or a graphite layer.
Further, in step S1, the lead frame is plated with the anti-corrosion conductive material by magnetron sputtering or evaporation.
Further, the following steps are also provided between steps S3 and S4: the two ends of the first wire are bent into hook shapes, and the two ends of the second wire are bent into hook shapes.
Furthermore, the first conducting wire and the second conducting wire are both silver wires or gold wires.
Further, the following steps are also provided between steps S7 and S8: and folding the side of the second lead wire far away from the chip downwards and turning the second lead wire reversely to form a Z shape.
Further, in step S6, the conductive material is solder paste or conductive silver paste.
The invention has the beneficial effects that: the invention discloses a high-temperature-resistant packaging method of a silicon carbide diode, wherein an action region of thermosonic welding is far away from a chip, so that the connection structure between a lead and a pin is stable and firm, and the chip can be effectively protected from being influenced by high temperature.
Drawings
Fig. 1 is a schematic view of a state of processing of the silicon carbide diode when step S2 is performed according to the present invention.
Fig. 2 is a schematic view of the state of processing of the silicon carbide diode when step S4 is performed according to the present invention.
Fig. 3 is a schematic view of the state of processing of the silicon carbide diode when step S5 is performed according to the present invention.
Fig. 4 is a schematic view of the state of processing of the silicon carbide diode when step S7 is performed according to the present invention.
Fig. 5 is a schematic view illustrating a state of processing of the silicon carbide diode when step S8 is performed according to the present invention.
Fig. 6 is a schematic view of the state of processing of the silicon carbide diode when step S9 is performed according to the present invention.
Reference numerals: the chip package comprises a first pin 11, a first lead 111, a second pin 12, a second lead 121, an anticorrosive conductive layer 13, a ceramic plate 20, a conductive layer forming mold 30, an annular groove 31, a central hole 32, a chip 40, a heat-conducting silica gel layer 411, a conductive silver gel layer 412, a conductive material layer 42 and an insulating package body 50.
Detailed Description
For further understanding of the features and technical means of the present invention, as well as the specific objects and functions attained by the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description.
Refer to fig. 1 to 6.
The embodiment of the invention discloses a high-temperature-resistant packaging method of a silicon carbide diode, which sequentially comprises the following steps of:
s1, coating a film, namely putting the lead frame with the first lead 11 and the second lead 12 into a vacuum chamber, preferably, the lead frame is a copper frame or a conductive aluminum alloy frame, filling inert gas into the vacuum chamber, plating an anticorrosive conductive material on the surface of the lead frame to form an anticorrosive conductive layer 13, wherein the anticorrosive conductive layer 13 can effectively prevent the first lead 11 and the second lead 12 from being corroded by the external environment;
s2, heating the ceramic plate 20 by a hot plate, as shown in fig. 1, fastening a conductive layer forming mold 30 on the ceramic plate 20, embedding the ceramic plate 20 in a silicon carbide diode, which can effectively improve the heat dissipation performance of the silicon carbide diode and improve the working performance of the silicon carbide diode under high temperature conditions, wherein the conductive layer forming mold 30 is provided with an annular groove 31 and a central hole 32, the annular groove 31 penetrates through the upper and lower surfaces of the conductive layer forming mold 30, the annular groove 31 surrounds the central hole 32, i.e. the conductive layer forming mold 30 is composed of two concentric rings;
s3, injecting glue, namely injecting heat-conducting silica gel into the annular groove 31, wherein the heat-conducting silica gel has good heat-conducting property and insulating property, and injecting conductive silver colloid into the central hole 32, wherein the conductive silver colloid has good electric conductivity, heat-conducting property and adhesive property;
s4, first connecting, as shown in fig. 2, removing the conductive layer forming mold 30, the conductive silica gel surrounding the conductive silver paste, placing the first lead 111 on the conductive silica gel and the conductive silver paste in a direction parallel to the ceramic plate 20, and positioning one end of the first lead 111 in the conductive silver paste, wherein the conductive silica gel and the conductive silver paste are both in a high temperature state due to the high temperature state of the ceramic plate 20, so that the conductive silica gel and the conductive silver paste are cured at an accelerated speed, and thus the conductive silver paste has relatively stable and non-flowable performance;
s5, attaching the chip 40, as shown in FIG. 3, pressing the chip 40 on the thermal silicone adhesive and the conductive silver adhesive, the chip 40 applying a certain pressure on the thermal silicone adhesive and the conductive silver adhesive, the chip 40 being silicon carbide grains, the thermal silicone adhesive and the conductive silver adhesive being flattened between the chip 40 and the ceramic plate 20 to form a thermal silicone adhesive layer 411 and a conductive silver adhesive layer 412, which can effectively ensure the structural firmness of the chip 40 mounted on the ceramic plate 20, the thermal silicone adhesive layer 411 being connected around the conductive silver adhesive layer 412 in a surrounding manner, the conductive silver adhesive layer 412 being effectively confined in the thermal silicone adhesive layer 411, which can effectively prevent the conductive silver adhesive layer 412 from contacting with the external environment, thereby effectively reducing the probability of short circuit, the conductive silver adhesive layer 412 being located in the projection of the chip 40 on the ceramic plate 20, i.e. the conductive silver adhesive layer 412 is completely covered by the chip 40, the conductive silver adhesive layer 412 being connected with the electrodes at the bottom of the chip 40 and the first conductive wires 111, the projection of the chip 40 on the ceramic plate 20 is located in the heat-conducting silica gel layer 411, that is, the heat-conducting silica gel layer 411 also surrounds the periphery below the chip 40, so that the conductive structure below the chip 40 can be effectively protected, short circuit is avoided, one end of the first lead 111 is connected in the heat-conducting silver gel layer 412, and the first lead 111 penetrates through one side of the heat-conducting silica gel layer 411;
s6, performing secondary wiring, coating a conductive material on the top of the chip 40 to form a conductive material layer 42, pressing one end of the second wire 121 into the conductive material layer 42, and connecting the top electrode of the chip 40 with the second wire 121 through the conductive material layer 42;
s7, curing, as shown in fig. 4, the heat-conducting silicone adhesive layer 411, the conductive silver adhesive layer 412, and the conductive material layer 42 are cured by hot air or the like, preferably, the curing process is to put each structure into a vacuum furnace to heat and dry, so as to accelerate the curing rate of the heat-conducting silicone adhesive layer 411, the conductive silver adhesive layer 412, and the conductive material layer 42, the conductive silicone adhesive layer and the conductive silver adhesive layer 412 form a first conductive layer, the conductive material layer 42 forms a second conductive layer, the first conductive layer is located at the bottom of the chip 40, the second conductive layer is located at the top of the chip 40, and the curing process of the upper and lower parts of the chip 40 is performed synchronously, which can effectively save time;
s8, bonding, as shown in fig. 5, placing the first lead 11 and the second lead 12 in the lead frame on two sides of the ceramic board 20, bonding and connecting one end of the first wire 111 away from the chip 40 to the first lead 11 by thermosonic welding, bonding and connecting one end of the second wire 121 away from the chip 40 to the second lead 12 by thermosonic welding, wherein the thermosonic welding does not affect the chip 40, the chip 40 is not damaged by high temperature or high frequency vibration, the performance of the chip 40 can be effectively ensured, and an internal structure can be obtained, the internal structure includes the ceramic board 20, the chip 40, the first wire 111, the second wire 121, the first conductive layer, the second conductive layer, the first lead 11 and the second lead 12;
s9, performing plastic package, as shown in fig. 6, after the internal structural component is placed in a plastic package forming mold, injecting a plastic package material and curing the plastic package material to obtain a silicon carbide diode, where the plastic package material is preferably an insulating resin, the plastic package material is cured to form an insulating package 50, and the silicon carbide diode includes the ceramic board 20, the chip 40, the first lead 111, the second lead 121, the first conductive layer, the second conductive layer, the first lead 11, the second lead 12, and the insulating package 50.
The silicon carbide diode manufactured by the invention has good heat dissipation performance, stable and firm integral result, reliable internal conductive circuit structure and difficult short circuit.
In this embodiment, in step S1, the inert gas filled in the vacuum chamber is nitrogen and/or argon.
In this embodiment, in step S1, the anti-corrosion conductive material is a palladium silver layer or a graphite layer, and both the palladium silver material and the graphite material have good conductive performance and anti-corrosion performance.
In this embodiment, in step S1, the lead frame is plated with the anti-corrosion conductive material by magnetron sputtering or evaporation.
In the present embodiment, the following steps are further provided between steps S3 and S4: the two ends of the first wire 111 are bent to form hooks, so that the firmness of the connection structures at the two ends of the first wire 111 can be effectively improved, the two ends of the second wire 121 are bent to form hooks, and the firmness of the connection structures at the two ends of the second wire 121 can be effectively improved.
In this embodiment, the first conductive line 111 and the second conductive line 121 are both silver lines or gold lines, which can effectively improve the conductive performance and the ductility of the conductive lines.
Based on the above embodiment, the following steps are further provided between steps S7 and S8: as shown in fig. 4, one side of the second conductive line 121 away from the chip 40 is folded downward and then turned over in a reverse direction to form a zigzag shape, one side of the second conductive line 121 away from the chip 40 is located below the second conductive layer, and one end of the second conductive line 121 away from the chip 40 can be horizontally laid on the second pin 12, so that stress inside the finally obtained silicon carbide diode due to irregular bending of the second conductive line 121 can be effectively prevented, and in the plastic package process, the stable and firm connection structure at the two ends of the second conductive line 121 can be effectively ensured.
In this embodiment, in step S6, the conductive material is solder paste or conductive silver paste.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (8)
1. A high-temperature-resistant packaging method of a silicon carbide diode is characterized by comprising the following steps:
s1, coating a film, namely putting the lead frame into a vacuum chamber, filling inert gas into the vacuum chamber, and plating an anticorrosive conductive material on the surface of the lead frame to form an anticorrosive conductive layer;
s2, heating the ceramic plate by a hot plate, buckling a conductive layer forming mold on the ceramic plate, wherein the conductive layer forming mold is internally provided with an annular groove and a central hole, and the annular groove surrounds the periphery of the central hole;
s3, injecting glue, namely injecting heat-conducting silica gel into the annular groove, and then injecting conductive silver glue into the central hole;
s4, primary wiring, removing the conductive layer forming mold, and placing a first lead on the heat-conducting silica gel and the conductive silver colloid, wherein one end of the first lead is positioned in the conductive silver colloid;
s5, pasting a chip, pressing the chip on the heat-conducting silica gel and the conductive silver gel, flattening the heat-conducting silica gel and the conductive silver gel between the chip and the ceramic plate to form a conductive silver gel layer and a heat-conducting silica gel layer, wherein the heat-conducting silica gel layer is connected around the conductive silver gel layer, the conductive silver gel layer is positioned in the projection of the chip on the ceramic plate, and the projection of the chip on the ceramic plate is positioned in the heat-conducting silica gel layer;
s6, secondary wiring, coating a conductive material on the top of the chip to form a conductive material layer, and pressing one end of the second lead into the conductive material layer;
s7, curing, namely curing the heat-conducting silica gel layer, the conductive silver glue layer and the conductive material layer, wherein the conductive silica gel layer and the conductive silver glue layer form a first conductive layer, and the conductive material layer forms a second conductive layer;
s8, bonding, namely placing the first lead and the second lead in the lead frame on two sides of the ceramic plate, bonding and connecting one end of the first lead, which is far away from the chip, with the first lead in a thermosonic welding mode, and bonding and connecting one end of the second lead, which is far away from the chip, with the second lead in a thermosonic welding mode to obtain an internal structural component;
and S9, plastic packaging, namely, after the internal structural part is placed in a plastic packaging forming die, injecting a plastic packaging material and curing to obtain the silicon carbide diode.
2. The method of claim 1, wherein in step S1, the inert gas filled in the vacuum chamber is nitrogen and/or argon.
3. The method for encapsulating silicon carbide diode according to claim 1, wherein in step S1, the anti-corrosion conductive material is a palladium silver layer or a graphite layer.
4. The method as claimed in claim 1, wherein in step S1, the lead frame is plated with the anti-corrosion conductive material by magnetron sputtering or evaporation.
5. The method of claim 1, wherein the following steps are further provided between steps S3 and S4: the two ends of the first wire are bent into hook shapes, and the two ends of the second wire are bent into hook shapes.
6. The method as claimed in claim 1 or 5, wherein the first and second wires are silver or gold wires.
7. The method of claim 6, wherein the following steps are further provided between steps S7 and S8: and folding the side of the second lead wire far away from the chip downwards and turning the second lead wire reversely to form a Z shape.
8. The method as claimed in claim 1, wherein in step S6, the conductive material is solder paste or conductive silver paste.
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| CN202110139398.7A CN113035723B (en) | 2021-02-01 | 2021-02-01 | High-temperature-resistant packaging method for silicon carbide diode |
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| CN202110139398.7A CN113035723B (en) | 2021-02-01 | 2021-02-01 | High-temperature-resistant packaging method for silicon carbide diode |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887399A (en) * | 2012-12-22 | 2014-06-25 | 展晶科技(深圳)有限公司 | Manufacturing method of light-emitting diodes and light-emitting diodes manufactured through use of method |
| CN107275459A (en) * | 2017-06-16 | 2017-10-20 | 深圳市科艺星光电科技有限公司 | Potted element and its manufacture method |
| CN207097856U (en) * | 2017-06-16 | 2018-03-13 | 深圳市科艺星光电科技有限公司 | Potted element, circuit board and lighting device |
| CN108075026A (en) * | 2017-12-08 | 2018-05-25 | 蔡志嘉 | Three defending type LED component and preparation method thereof |
| CN108847439A (en) * | 2018-04-28 | 2018-11-20 | 华灿光电(苏州）有限公司 | A kind of packaging method and light emitting diode of light emitting diode |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US8058667B2 (en) * | 2009-03-10 | 2011-11-15 | Nepes Led Corporation | Leadframe package for light emitting diode device |
| KR102335216B1 (en) * | 2017-04-26 | 2021-12-03 | 삼성전자 주식회사 | Light emitting device package |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887399A (en) * | 2012-12-22 | 2014-06-25 | 展晶科技(深圳)有限公司 | Manufacturing method of light-emitting diodes and light-emitting diodes manufactured through use of method |
| CN107275459A (en) * | 2017-06-16 | 2017-10-20 | 深圳市科艺星光电科技有限公司 | Potted element and its manufacture method |
| CN207097856U (en) * | 2017-06-16 | 2018-03-13 | 深圳市科艺星光电科技有限公司 | Potted element, circuit board and lighting device |
| CN108075026A (en) * | 2017-12-08 | 2018-05-25 | 蔡志嘉 | Three defending type LED component and preparation method thereof |
| CN108847439A (en) * | 2018-04-28 | 2018-11-20 | 华灿光电(苏州）有限公司 | A kind of packaging method and light emitting diode of light emitting diode |
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