CN113016079A - 半导体芯片封装结构、封装方法及电子设备 - Google Patents

半导体芯片封装结构、封装方法及电子设备 Download PDF

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CN113016079A
CN113016079A CN201980034236.8A CN201980034236A CN113016079A CN 113016079 A CN113016079 A CN 113016079A CN 201980034236 A CN201980034236 A CN 201980034236A CN 113016079 A CN113016079 A CN 113016079A
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semiconductor
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CN113016079B (zh
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罗飞宇
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SZ DJI Technology Co Ltd
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SZ DJI Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

一种半导体芯片封装结构、封装方法及电子设备。该封装结构,包括:设置在基板(300)上的发光单元(30)和反射镜(400);发光单元(30)包括:第一载片台(301),设置于基板(300)上;第一焊料层(302),设置于第一载片台(301)的第一承载面上;半导体发光芯片(303),具有一出光端面(3031)以及与出光端面(3031)相对的第二端面(3032);当半导体发光芯片(303)通过第一焊料层(302)固定于第一承载面时,第一承载面具有超出出光端面(3031)的第一边沿(3011)以及超出第二端面(3032)的第二边沿(3012),出光端面(3031)与第一边沿(3011)形成的第一间隔小于第二端面(3032)与第二边沿(3012)形成的第二间隔;反射镜(400),具有至少一反射面,反射面靠近出光端面(3031)。该结构能够引导并容纳溢出的多余焊料,避免焊料溢出载片台。

Description

PCT国内申请,说明书已公开。

Claims (34)

  1. PCT国内申请,权利要求书已公开。
CN201980034236.8A 2019-10-18 2019-10-18 半导体芯片封装结构、封装方法及电子设备 Active CN113016079B (zh)

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PCT/CN2019/111874 WO2021072731A1 (zh) 2019-10-18 2019-10-18 半导体芯片封装结构、封装方法及电子设备

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Families Citing this family (1)

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CN115090491B (zh) * 2022-07-13 2024-04-26 北京无线电测量研究所 一种微小型高密度载片贴片工装和贴片方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008198841A (ja) * 2007-02-14 2008-08-28 Elpida Memory Inc 半導体装置
CN101728762A (zh) * 2008-10-14 2010-06-09 夏普株式会社 半导体激光装置及其制造方法
CN103165806A (zh) * 2011-12-14 2013-06-19 旭明光电股份有限公司 垂直式发光二极管晶粒及其制作方法
DE102013101262A1 (de) * 2013-02-08 2014-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Leuchtmodul, optoelektronische Leuchtvorrichtung und Kfz-Scheinwerfer
CN203910779U (zh) * 2014-06-26 2014-10-29 三垦电气株式会社 半导体装置
WO2017220026A1 (zh) * 2016-06-23 2017-12-28 亿光电子工业股份有限公司 发光二极管及其制作方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006109407A1 (ja) * 2005-04-06 2006-10-19 Matsushita Electric Industrial Co., Ltd. フリップチップ実装方法及びバンプ形成方法
US9418919B2 (en) * 2010-07-29 2016-08-16 Nxp B.V. Leadless chip carrier having improved mountability
CN104201120B (zh) * 2014-08-28 2017-05-24 通富微电子股份有限公司 半导体倒装封装方法
CN204732400U (zh) * 2015-06-11 2015-10-28 亚昕科技股份有限公司 引线框架结构
CN106856218B (zh) * 2016-12-20 2019-06-11 创维液晶器件(深圳)有限公司 一种免封装led结构及其制作方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008198841A (ja) * 2007-02-14 2008-08-28 Elpida Memory Inc 半導体装置
CN101728762A (zh) * 2008-10-14 2010-06-09 夏普株式会社 半导体激光装置及其制造方法
CN103165806A (zh) * 2011-12-14 2013-06-19 旭明光电股份有限公司 垂直式发光二极管晶粒及其制作方法
DE102013101262A1 (de) * 2013-02-08 2014-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Leuchtmodul, optoelektronische Leuchtvorrichtung und Kfz-Scheinwerfer
CN203910779U (zh) * 2014-06-26 2014-10-29 三垦电气株式会社 半导体装置
WO2017220026A1 (zh) * 2016-06-23 2017-12-28 亿光电子工业股份有限公司 发光二极管及其制作方法

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CN113016079B (zh) 2022-06-24

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