CN112992885B - Light-emitting panel and display device - Google Patents
Light-emitting panel and display device Download PDFInfo
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- CN112992885B CN112992885B CN202110145251.9A CN202110145251A CN112992885B CN 112992885 B CN112992885 B CN 112992885B CN 202110145251 A CN202110145251 A CN 202110145251A CN 112992885 B CN112992885 B CN 112992885B
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- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000003466 welding Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 28
- 239000012788 optical film Substances 0.000 claims description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005476 soldering Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 16
- 238000005516 engineering process Methods 0.000 abstract description 14
- 238000007639 printing Methods 0.000 abstract description 9
- 230000001680 brushing effect Effects 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 130
- 238000000149 argon plasma sintering Methods 0.000 description 11
- 238000002310 reflectometry Methods 0.000 description 11
- 238000000576 coating method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- -1 polyethylene naphthalate Polymers 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 4
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000007641 inkjet printing Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 235000010215 titanium dioxide Nutrition 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 206010040844 Skin exfoliation Diseases 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical group 0.000 description 2
- 239000012752 auxiliary agent Substances 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- MMZYCBHLNZVROM-UHFFFAOYSA-N 1-fluoro-2-methylbenzene Chemical compound CC1=CC=CC=C1F MMZYCBHLNZVROM-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- HJOVHMDZYOCNQW-UHFFFAOYSA-N Isophorone Natural products CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000007771 core particle Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 125000006838 isophorone group Chemical group 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- H05K13/04—Mounting of components, e.g. of leadless components
- H05K13/046—Surface mounting
- H05K13/0465—Surface mounting by soldering
Abstract
The application discloses a light-emitting panel and a display device, wherein the light-emitting panel comprises an array substrate, an ink layer, a welding layer and an LED chip, wherein the array substrate is provided with a first surface and a second surface which are oppositely arranged; the printing ink layer is arranged on the first surface, the printing ink layer is provided with a first opening and a second opening, the first opening is arranged on one surface of the printing ink layer, which is close to the array substrate, the second opening is arranged on one surface of the printing ink layer, which is far away from the array substrate, the first opening is communicated with the second opening, and the width of the first opening is smaller than that of the second opening; the welding layer is arranged in the first opening; the LED chip is arranged in the second opening, and the LED chip is connected with one surface, far away from the array substrate, of the welding layer. The luminous panel and the display device disclosed by the application are used for improving the accuracy of the surface mounting technology during tin brushing.
Description
Technical Field
The present application relates to the field of display technologies, and in particular, to a light emitting panel display device.
Background
Mini LED (Mini Light Emitting Diode, sub-millimeter light emitting diode) light emitting panels or Micro LED (Micro Light Emitting Diode ) light emitting panels are widely developed for direct display or as backlights for display devices. Compared with the existing LCD (Liquid Crystal Display ) display panel and OLED (Organic Light-Emitting Diode) display panel, the Mini LED Light-Emitting panel and Micro LED Light-Emitting panel have the advantages of quick response, high color gamut, high PPI, low energy consumption and the like.
The Mini LED light-emitting panel is a technology for transferring an LED chip to a back plate, and the back plate or a transferred device drives the LED chip to emit light. The product can be used as backlight to play a role in partition control; when the traditional backlight is started, all lamps are started, and the area which is not displayed on the luminous panel is irradiated by the backlight, so that the dark state is not black enough, and the contrast ratio is low; however, the Mini-LED backlight can be matched with the display picture of the display panel, so that the area backlight is started, the area backlight which is not displayed on the display panel is not started, and the complete black state is realized, thereby achieving the contrast ratio of millions.
However, because the area without the lamp on the Mini-LED light-emitting panel has lower reflectivity and larger light loss, the prior art is to provide a light reflection layer on the surface of the array substrate to increase the reflectivity of the array substrate, thereby improving the light utilization rate.
However, the light reflection layer can have higher reflectivity only when the light reflection layer reaches a certain thickness; however, when the material of the light reflection layer is coated too thick, it is impossible to brush tin when the surface mount technology (Surface Mount Technology, SMT) is performed.
Therefore, a new solution is needed to solve the above-mentioned problems.
Disclosure of Invention
The embodiment of the application provides a light-emitting panel and a display device, which are used for improving the accuracy of a surface mounting technology in tin brushing.
An embodiment of the present application provides a light emitting panel including:
the array substrate is provided with a first surface and a second surface which are oppositely arranged;
the printing ink layer is arranged on the first surface, the printing ink layer is provided with a first opening and a second opening, the first opening is arranged on one surface, close to the array substrate, of the printing ink layer, the second opening is arranged on one surface, far away from the array substrate, of the printing ink layer, the first opening is communicated with the second opening, and the width of the first opening is smaller than that of the second opening;
a weld layer disposed within the first aperture;
the LED chip is arranged in the second opening, and the LED chip is connected with one surface, far away from the array substrate, of the welding layer.
In the light-emitting panel provided by the embodiment of the application, the ink layer comprises a first sub-ink layer and a second sub-ink layer;
the first sub-ink layer is arranged on the first surface, and the first opening penetrates through the first ink layer;
the second sub-ink layer is arranged on one surface, far away from the array substrate, of the first sub-ink layer, and the second opening penetrates through the second sub-ink layer and is communicated with the first opening.
In the light-emitting panel provided by the embodiment of the application, the width of the first opening is greater than or equal to 80 micrometers, and the width of the second opening is greater than or equal to 120 micrometers.
In the light-emitting panel provided by the embodiment of the application, the light-emitting panel further comprises an optical film, wherein the optical film is arranged on one surface of the LED chip far away from the welding layer, and the optical film is used for transmitting light rays emitted by the LED chip.
In the light-emitting panel provided by the embodiment of the application, one surface of the optical film far away from the LED chip is provided with the light-scattering structure distributed in an array, and the LED chip corresponds to the center of the light-scattering structure.
In the light-emitting panel provided by the embodiment of the application, the light-scattering structure comprises a first protrusion and a second protrusion surrounding the first protrusion, the first protrusion is arranged corresponding to the LED chip, and the height of the first protrusion is smaller than that of the second protrusion.
In the light-emitting panel provided by the embodiment of the application, the thickness of the ink layer is between 40 micrometers and 100 micrometers.
In the light-emitting panel provided by the embodiment of the application, the reflectivity of the ink layer is greater than or equal to 80%.
In the light-emitting panel provided by the embodiment of the application, the ink layer is made of a mixture of white ink and titanium dioxide.
The embodiment of the application also provides a display device, which comprises the light-emitting panel and a touch device, wherein the touch device is arranged on the light-emitting panel.
In the light-emitting panel provided by the embodiment of the application, the first opening and the second opening are arranged on the ink layer, and the width of the first opening is smaller than that of the second opening, so that when tin is brushed by using the surface mounting technology, a steel mesh can conveniently and smoothly print solder paste on a bonding pad of an array substrate, and the accuracy of the surface mounting technology in tin brushing is improved.
In order to make the above-mentioned objects of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a light-emitting panel according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of an ink layer in a light-emitting panel according to an embodiment of the present application;
fig. 3 is a schematic diagram of another structure of a light-emitting panel according to an embodiment of the present application;
fig. 4 is a schematic structural diagram of a light-emitting panel according to an embodiment of the present application;
fig. 5 is a schematic diagram of a display device according to an embodiment of the application.
Detailed Description
For a better understanding of the present application, its objects, technical solutions and advantages, reference should be made to the following detailed description of the application with reference to the drawings wherein like reference numerals refer to like elements throughout the several views, and the following description is based on the illustrated embodiments of the application, which should not be construed as limiting other embodiments of the application not described herein. The word "embodiment" is used in this specification to mean an example, instance, or illustration.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
The embodiment of the application provides a light-emitting panel, which is described in detail below. The following description of the embodiments is not intended to limit the preferred embodiments.
Referring to fig. 1, an embodiment of the application provides a light-emitting panel 100, wherein the light-emitting panel 100 includes an array substrate 10, an ink layer 20, a soldering layer 30, an LED chip 40 and an optical film 50.
It should be noted that, the light-emitting panel 100 provided in the embodiment of the present application may be used for direct display, or the light-emitting panel 100 may be used as a backlight source of a liquid crystal display device, and when the light-emitting panel 100 is used as a backlight source of a liquid crystal display device, the light-emitting panel 100 may be used as a side-in backlight source or a direct-down backlight source.
Specifically, the array substrate 10 has a first face 10a and a second face 10b disposed opposite to each other. The array substrate 10 includes a base layer 101, a thin film transistor 102, a gate insulating layer 103, an interlayer dielectric layer 104, a conductive pad 105, a first passivation layer 106, a first electrode 107, and a second passivation layer 108.
In some embodiments, the base layer 101 may include a first flexible substrate layer, a silicon dioxide layer, a second flexible substrate layer, and a buffer layer, which are sequentially stacked. Wherein the second flexible substrate layer and the first flexible substrate layer are the same in material and may include at least one of PI (polyimide), PET (polyethylene naphthalate), PEN (polyethylene naphthalate), PC (polycarbonate), PES (polyethersulfone), PAR (aromatic fluorotoluene containing polyarylate), or PCO (polycyclic olefin). The buffer layer is composed of a stack structure of one or more of silicon-containing nitride, silicon-containing oxide or silicon-containing oxynitride.
The thin film transistor 102 includes an active layer 102a, a gate electrode 102b, a source electrode 102c, and a drain electrode 102d. The active layer 102a is disposed on the base layer 101, and the active layer 102a includes a channel region and doped regions, and the doped regions are located at two sides of the channel region. The active layer 102a may be an oxide active layer or a low temperature polysilicon active layer. For example, in some embodiments, the material of the active layer 102a is indium tin oxide, ln-IZO, ITZO, ITGZO, HIZO, IZO (InZnO), znO: F, in may also be used 2 O 3 :Sn、In 2 O 3 :Mo、Cd 2 SnO 4 、ZnO:Al、TiO 2 Nb, cd-Sn-O or other metal oxides. The doped region can be a P-type doped region or an N-type doped region, and when the doped region is the P-type doped region, the doped element of the doped region is one or a mixture of two of boron and indium. When the doped region is an N-type doped region, the doped element of the doped region is one or a mixture of more of phosphorus, arsenic and antimony.
The gate insulating layer 103 covers the active layer 102a and the base layer 101. The material of the gate insulating layer 103 may be one of silicon nitride, silicon oxide, silicon oxynitride, or aluminum oxide, or any combination thereof.
The gate electrode 102b is disposed on the gate insulating layer 103, and the orthographic projection of the gate electrode 102b on the base layer 101 is entirely covered by the orthographic projection of the active layer 102a on the base layer 101. The material of the gate 102b may be a metal or alloy such as Cr, W, ti, ta, mo, al, cu, and a gate metal layer composed of multiple layers of metals may also be sufficient.
The interlayer dielectric layer 104 covers the gate insulating layer 103 and the gate electrode 102b, wherein the interlayer dielectric layer 104 may be oxide or oxynitride.
The source electrode 102c and the drain electrode 102d are respectively electrically connected with the doped regions at two sides of the channel region. The source electrode 102c and the drain electrode 102d may be made of metal or alloy such as Cr, W, ti, ta, mo, al, cu, and a gate metal layer made of multiple layers of metal may be used.
The conductive pad 105 is electrically connected to the drain 102d. The first passivation layer 106 is disposed on a surface of the interlayer dielectric layer 104 away from the gate insulating layer 103, and the first passivation layer 106 covers the interlayer dielectric layer 104, the source electrode 102c, the drain electrode 102d, and the conductive pad 105. The first electrode 107 is connected to the conductive pad 105 through a via hole.
The second passivation layer 108 covers the first electrode 107 and the first passivation layer 106, and exposes the first electrode 107.
The material of the first passivation layer 106 and the second passivation layer 108 may be SiO x 、SiO x /SiN x Lamination or SiO x /SiN x /Al 2 O 3 Laminated inorganic nonmetallic film layer materials.
Referring to fig. 1 and fig. 2, fig. 2 is a schematic structural diagram of an ink layer in a light-emitting panel according to an embodiment of the application. The ink layer 20 is provided on the first face 10a. The ink layer 20 includes a first sub-ink layer 201 and a second sub-ink layer 202. The first sub-ink layer 201 is disposed on the first surface 10a, and the second sub-ink layer 202 is disposed on a surface of the first sub-ink layer 201 away from the array substrate 10. The ink layer 20 is provided with a first opening 201a and a second opening 202a, the first opening 201a is arranged on one surface of the ink layer 20 close to the array substrate 10, and the first opening 201a penetrates through the first sub-ink layer 201. The second opening 202a is disposed on a surface of the ink layer 20 away from the array substrate 10, and the first opening 201a communicates with the second opening 202a, i.e., the second opening 202a penetrates the second sub-ink layer 202 to communicate with the first opening 201 a. And, the width W1 of the first opening 201a is smaller than the width W2 of the second opening 202a.
In the embodiment of the application, the first opening 201a and the second opening 202a are arranged on the ink layer 20, and the width W1 of the first opening 201a is smaller than the width W2 of the second opening 202a, so that when the surface mount technology is used for brushing tin, a steel mesh can conveniently and smoothly print tin paste on a bonding pad of the array substrate 10, and the tin brushing precision is improved.
In one embodiment, the width W1 of the first opening 201a is greater than or equal to 80 microns. The width W2 of the second opening 202a is greater than or equal to 120 microns. For example, the width W1 of the first aperture 201a may be any one of 80 microns, 85 microns, 95 microns, 110 microns, or 120 microns, and the width W2 of the second aperture 202a may be any one of 120 microns, 135 microns, 150 microns, 165 microns, or 180 microns. Since the width of the second opening 202a is larger than that of the first opening 201a, the solder paste can be smoothly filled in the first opening 201a when the surface mounting technology is used for brushing tin.
In one embodiment, the ink layer 20 is formed by two applications of ink material. That is, the first ink material application forms a first sub-ink layer 201a and a first aperture 201a, and the second ink material application forms a second sub-ink layer 202 and a second aperture 202a. According to the embodiment of the application, the first sub-ink layer 201 and the second sub-ink layer 202 are formed by coating the ink materials twice, on one hand, the width W1 of the first opening 201a of the first sub-ink layer 201 formed by coating the ink materials for the first time is matched with the width of the LED chip 40, so that the LED chip 40 cannot have the phenomenon of light leakage, and when the second opening 202a of the second sub-ink layer 202 is formed by coating the ink materials for the second time, the width of the second opening 202a is larger than the width of the first opening 201a, so that solder paste can be smoothly filled in the first opening 201a when tin is brushed by using the surface mounting technology; on the other hand, the first and second sub-ink layers 201 and 202 are formed by two coating processes, which increases the thickness of the entire ink layer 20, and increases the reflectivity of the ink layer 20 and the adhesion with the array substrate 10.
In one embodiment, the ink layer 20 is formed by an inkjet printing, doctor blading or screen printing process. For example, the present embodiment may print an ink material on the first side 10a of the array substrate 10 by an inkjet printing process to form the ink layer 20. Because of the high precision of the inkjet printing process, the inkjet head is turned off on the array substrate 10 corresponding to the first and second openings 201a and 202a during the inkjet printing process, and thus the ink layer material is not coated on the first and second openings 201a and 202a.
The material of the ink layer 20 is a mixture of white ink and titanium dioxide. In another embodiment, the material of the ink layer 20 may also be a mixture of white ink and a highly reflective material. For example, the material of the ink layer 20 may be a mixture of white ink and at least one of silver or aluminum oxide.
In one embodiment, the ink material comprises, in weight percent: 25% -45% of resin, 20% -35% of toner, 8% -20% of auxiliary agent, 10% -28% of solvent, 5% -10% of curing agent, 2% -15% of diluent, 2% -12% of gloss oil and 2% -15% of diffusion particles. The ink layer 20 is formed by applying the ink material described above to the array substrate 10 and then drying the solvent. The diameter of the diffusion particles is 3-30 micrometers, the resin is epoxy resin, the toner is titanium white or lithopone or zinc oxide, the auxiliary agent is isophorone, the solvent is aromatic hydrocarbon or alcohol or ketone or ester, the curing agent is H01 curing agent, the diluent is 783 diluent, and the gloss oil is rosin resin. Wherein the solvent can be aromatic hydrocarbon such as benzene, toluene, xylene, etc., alcohol such as ethanol, isopropanol, butanol, etc., ketone such as acetone, butanone, cyclohexanone, etc., and ester such as ethyl acetate, butyl acetate, etc.
In one embodiment, the diffusion particles may be various inorganic nanoparticles such as barium sulfate (BaSO 4), calcium carbonate (CaCO 3), zinc selenide (ZnSe), cadmium sulfide (CdS), titanium dioxide (TiO 2), barium titanate (BaTiO 3), zinc sulfide (ZnS), zirconium dioxide (ZrO 2), silicon nitride (Si 3N 4), tin oxide (SnO), zinc oxide (ZnO), and composite nanoparticles thereof. The ink layer 20 prepared from the ink material has high reflectivity, uniform printing thickness and no bubble, perforation and other phenomena.
In one embodiment, the ink layer 20 has a thickness between 40 microns and 100 microns. Specifically, the first sub-ink layer 201 has a thickness of less than 30 microns and the second sub-ink layer 202 has a thickness of less than 70 microns. For example, the thickness of the ink layer 20 may be any of 40 microns, 55 microns, 65 microns, 80 microns, 95 microns, or 100 microns. In the embodiment, the thickness of the ink layer 20 is set between 40 micrometers and 100 micrometers, so that the reflectivity of the ink layer is ensured on one hand; on the other hand, the ink layer 20 is prevented from being excessively thick, resulting in excessive stress, and is liable to risk of Peeling (Peeling).
In one embodiment, the reflectivity of the ink layer 20 is greater than or equal to 80%. For example, the reflectivity of the ink layer 20 may be any of 80%, 85%, 89%, 96%, or 100%. The reflectivity of the ink layer 20 of this embodiment is greater than or equal to 80%, and the light extraction rate of the LED chip 40 is ensured, thereby improving the light extraction efficiency of the light emitting panel.
The solder layer 30 is disposed in the first opening 201a and electrically connected to the first electrode 107.
In some embodiments, the material of the solder layer 30 includes tin metal and a flux, which may be rosin. Wherein, the tin metal can be PbInAg spherical metal alloy powder, and the soldering flux can be one or a combination of polymerized rosin, hydrogenated rosin resin, petroleum modified resin and acrylic resin. The welding layer 30 comprises the following components in parts by weight: pbInAg spherical metal alloy powder: 82-91 parts of soldering flux: 9-18 parts. The embodiment of the application takes PbInAg spherical metal alloy powder as a tin metal material, can meet the requirements of having extremely low thermal expansion coefficient, is simple to prepare, has excellent storage performance, has good wettability to the welded layer 30, has extremely low porosity, and has excellent welding strength at the same time, so that the requirement of secondary reflow can be met.
The LED chip 40 is disposed in the second opening 202a, and the LED chip 40 is connected to a surface of the soldering layer 30 away from the array substrate 10. In some embodiments, the LED chip 40 may be a Mini LED (Mini Light Emitting Diode, sub-millimeter light emitting diode) chip.
In one embodiment, the LED chip 40 includes a first substrate, a first electrode, an epitaxial structure, a second electrode, and a first connection electrode, wherein the epitaxial structure includes a plurality of epitaxial units distributed in an array, the second electrode corresponds to the epitaxial units one by one, and the second electrode is electrically connected to the epitaxial units, and the first connection electrode extends along a second direction and is electrically connected to a plurality of second electrodes arranged along the second direction. The first electrode extends along a first direction, and the first direction and the second direction are different, namely the first connecting electrode and the first electrode jointly control the epitaxial unit positioned at the intersection position of the first connecting electrode and the first electrode to emit light. When the LED chip 40 is applied to a light-emitting panel, more LED core particles can be placed on the premise that the area of the light-emitting panel is not increased, so that the number of display pixels included in the light-emitting panel is increased, and the resolution of the light-emitting panel is further improved.
In an embodiment, a surface of the LED chip 40 adjacent to the soldering layer 30 is a concave-convex surface, and the concave-convex surface is used to increase the contact area between the soldering layer 30 and the LED chip 40, so as to prevent the LED chip 40 from falling off.
The optical film 50 is disposed on a surface of the LED chip 40 away from the soldering layer 30, and the optical film 50 is used for transmitting the light emitted by the LED chip 40. The optical film 40 is made of a light-transmitting material, and specifically, may be glass, polymethyl methacrylate, polycarbonate, or the like.
Referring to fig. 3, fig. 3 is another schematic structural diagram of a light emitting panel according to an embodiment of the application. In one embodiment, the optical film 50 has an array of light scattering structures 501 on a side of the optical film away from the LED chip 40, and the LED chip 40 corresponds to the center P of the light scattering structures 501. The light diffusing structure 501 includes a first protrusion 501a and a second protrusion 501b surrounding the first protrusion 501a, the first protrusion 501a is disposed corresponding to the LED chip 40, and the height of the first protrusion 501a is smaller than the height of the second protrusion 501 b. The height of the first protrusion 501a in the light diffusing structure 501 of the present embodiment is smaller than that of the second protrusion 501b, and the function of this arrangement is: since the intensity of light is high near the LED chip 40, when the height of the first bump 501a is small, light diffusion is facilitated; the light intensity at the position far from the LED chip 40 is smaller, and when the height of the second protrusion 501b is larger, the light collection is facilitated, thereby realizing the uniform light emission of the light emitting panel. The optical film 40 is made of a light-transmitting material, and specifically, glass, polymethyl methacrylate, polycarbonate, and the like. Optionally, a convex lens is further disposed on a surface of the optical film 50 adjacent to the LED chip 40, for collecting the light emitted from the LED chip 40.
In an embodiment, the shape of the first protrusion 501a and the second protrusion 501b includes conical, spherical, and the like.
In an embodiment, please refer to fig. 4, fig. 4 is a schematic diagram of another structure of a light-emitting panel according to an embodiment of the present application. The light diffusing structure 501 includes a first projection 501a, a second projection 501b, a third projection 501c, a fourth projection 501d, and a fifth projection 501e. Wherein the first protrusion 501a, the second protrusion 501b, the third protrusion 501c, the fourth protrusion 501d and the fifth protrusion 501e are sequentially arranged along the center P of the light scattering structure 501 to either side of the light scattering structure 501. Also, the heights of the first, second, third, fourth, and fifth protrusions 501a, 501b, 501c, 501d, and 501e increase in order. The function of this mode of setting is: since the intensity of light is higher near the LED chip 40, when the height of the first protrusion 501a is smaller, light is facilitated to diffuse to both sides of the light scattering structure 501; since the light intensity at both sides of the light scattering structure 501 is the weakest, the concentration of light is facilitated when the height of the fifth protrusion 501e is large, thereby achieving uniform light emission of the light emitting panel. In the present embodiment, the first protrusion 501a, the second protrusion 501b, the third protrusion 501c, the fourth protrusion 501d, and the fifth protrusion 501e are sequentially arranged along the center P of the light scattering structure 501 to any side of the light scattering structure 501, thereby further realizing uniform light emission of the light emitting panel.
Referring to fig. 5, fig. 5 is a schematic diagram of a display device according to an embodiment of the application. The display apparatus 1000 includes a light-emitting panel 100 and a touch device 200, the touch device 200 is disposed on the light-emitting panel 100, and the touch device 200 is used for realizing touch sensing.
In an embodiment, the display apparatus 1000 further includes an optical adhesive layer (not shown in the drawing), where the optical adhesive layer is disposed between the light emitting panel 100 and the touch device 200, and the optical adhesive layer is used to attach the light emitting surface 100 and the touch device 200.
In the light-emitting panel provided by the embodiment of the application, the first opening and the second opening are arranged on the ink layer, and the width of the first opening is smaller than that of the second opening, so that when tin is brushed by using the surface mounting technology, a steel mesh can conveniently and smoothly print solder paste on a bonding pad of an array substrate, and the accuracy of the surface mounting technology in tin brushing is improved.
In addition, the first sub-ink layer and the second sub-ink layer are formed by coating the ink material twice, on one hand, the width of the first opening of the first sub-ink layer formed by the first coating is matched with the width of the LED chip, so that the LED chip cannot have light leakage, and when the second opening of the second sub-ink layer is formed by coating the ink material for the second coating, the solder paste can be smoothly filled in the first opening when the surface mounting technology is utilized for brushing tin because the width of the second opening is larger than that of the first opening; on the other hand, the first sub-ink layer and the second sub-ink layer are formed in a two-time coating mode, so that the thickness of the whole ink layer is increased, and the reflectivity of the ink layer and the adhesion force between the ink layer and the array substrate are further increased.
In summary, although the present application has been described in terms of the preferred embodiments, the preferred embodiments are not limited to the above embodiments, and various modifications and changes can be made by one skilled in the art without departing from the spirit and scope of the application, and the scope of the application is defined by the appended claims.
Claims (9)
1. A light-emitting panel, comprising:
the array substrate is provided with a first surface and a second surface which are oppositely arranged;
the ink layer is arranged on the first surface, the ink layer is provided with a first opening and a second opening, the first opening is arranged on one surface of the ink layer, which is close to the array substrate, the second opening is arranged on one surface of the ink layer, which is far away from the array substrate, and the width of the first opening is smaller than that of the second opening;
a weld layer disposed within the first aperture;
the LED chip is arranged in the second opening, and the LED chip is connected with one surface of the welding layer, which is far away from the array substrate;
wherein the ink layer comprises a first sub-ink layer and a second sub-ink layer;
the first sub-ink layer is arranged on the first surface, the first opening penetrates through the first sub-ink layer, and the width of the first opening is kept unchanged in the thickness direction of the first sub-ink layer;
the second sub-ink layer is arranged on one surface, far away from the array substrate, of the first sub-ink layer, the second opening penetrates through the second sub-ink layer and is communicated with the first opening, and the width of the second opening is kept unchanged in the thickness direction of the second sub-ink layer.
2. The light-emitting panel according to claim 1, wherein the width of the first opening is greater than or equal to 80 microns and the width of the second opening is greater than or equal to 120 microns.
3. The light-emitting panel according to claim 1, further comprising an optical film disposed on a side of the LED chip remote from the soldering layer, the optical film being for transmitting light emitted from the LED chip.
4. A light emitting panel as claimed in claim 3, wherein the side of the optical film remote from the LED chips has an array of light diffusing structures, the LED chips corresponding to the center of the light diffusing structures.
5. The light-emitting panel according to claim 4, wherein the light-diffusing structure includes a first protrusion and a second protrusion surrounding the first protrusion, the first protrusion is provided corresponding to the LED chip, and a height of the first protrusion is smaller than a height of the second protrusion.
6. The light-emitting panel of claim 1, wherein the ink layer has a thickness of between 40 microns and 100 microns.
7. The luminescent panel according to claim 1, wherein the reflectance of the ink layer is 80% or more.
8. The luminescent panel according to claim 1, wherein the material of the ink layer is a mixture of white ink and titanium dioxide.
9. A display device characterized in that it comprises the light-emitting panel according to any one of claims 1 to 8 and a touch device provided on the light-emitting panel.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101994951A (en) * | 2009-08-19 | 2011-03-30 | 瑞轩科技股份有限公司 | Back light module and display device |
| KR20110042999A (en) * | 2009-10-20 | 2011-04-27 | 주식회사 케이엔더블유 | Deisplay device |
| JP2012059921A (en) * | 2010-09-09 | 2012-03-22 | Citizen Holdings Co Ltd | Semiconductor light-emitting device and manufacturing method of the same |
| CN108535916A (en) * | 2018-04-20 | 2018-09-14 | 武汉华星光电技术有限公司 | Down straight aphototropism mode set and preparation method thereof |
| CN109597245A (en) * | 2019-01-02 | 2019-04-09 | 京东方科技集团股份有限公司 | Backlight module and preparation method thereof, display device |
| CN111326635A (en) * | 2020-03-11 | 2020-06-23 | 扬州乾照光电有限公司 | LED chip, manufacturing method thereof and display panel |
| CN111463232A (en) * | 2020-04-13 | 2020-07-28 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN111505868A (en) * | 2020-05-11 | 2020-08-07 | Tcl华星光电技术有限公司 | Backlight module and display panel |
| CN111679494A (en) * | 2020-06-02 | 2020-09-18 | Tcl华星光电技术有限公司 | Backlight module and manufacturing method thereof |
| CN112071875A (en) * | 2020-09-15 | 2020-12-11 | 深圳市华星光电半导体显示技术有限公司 | Display device and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW522540B (en) * | 2002-02-27 | 2003-03-01 | Advanced Semiconductor Eng | Solder ball manufacturing process |
| US8115218B2 (en) * | 2008-03-12 | 2012-02-14 | Industrial Technology Research Institute | Light emitting diode package structure and method for fabricating the same |
| WO2019177755A1 (en) * | 2018-03-13 | 2019-09-19 | Apple Inc. | Displays with direct-lit backlight units |
-
2021
- 2021-02-02 CN CN202110145251.9A patent/CN112992885B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101994951A (en) * | 2009-08-19 | 2011-03-30 | 瑞轩科技股份有限公司 | Back light module and display device |
| KR20110042999A (en) * | 2009-10-20 | 2011-04-27 | 주식회사 케이엔더블유 | Deisplay device |
| JP2012059921A (en) * | 2010-09-09 | 2012-03-22 | Citizen Holdings Co Ltd | Semiconductor light-emitting device and manufacturing method of the same |
| CN108535916A (en) * | 2018-04-20 | 2018-09-14 | 武汉华星光电技术有限公司 | Down straight aphototropism mode set and preparation method thereof |
| CN109597245A (en) * | 2019-01-02 | 2019-04-09 | 京东方科技集团股份有限公司 | Backlight module and preparation method thereof, display device |
| CN111326635A (en) * | 2020-03-11 | 2020-06-23 | 扬州乾照光电有限公司 | LED chip, manufacturing method thereof and display panel |
| CN111463232A (en) * | 2020-04-13 | 2020-07-28 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN111505868A (en) * | 2020-05-11 | 2020-08-07 | Tcl华星光电技术有限公司 | Backlight module and display panel |
| CN111679494A (en) * | 2020-06-02 | 2020-09-18 | Tcl华星光电技术有限公司 | Backlight module and manufacturing method thereof |
| CN112071875A (en) * | 2020-09-15 | 2020-12-11 | 深圳市华星光电半导体显示技术有限公司 | Display device and manufacturing method thereof |
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|---|---|
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