CN112992880B - Mini-LED backlight plate through hole forming method and electronic equipment - Google Patents
Mini-LED backlight plate through hole forming method and electronic equipment Download PDFInfo
- Publication number
- CN112992880B CN112992880B CN202110448071.8A CN202110448071A CN112992880B CN 112992880 B CN112992880 B CN 112992880B CN 202110448071 A CN202110448071 A CN 202110448071A CN 112992880 B CN112992880 B CN 112992880B
- Authority
- CN
- China
- Prior art keywords
- glass substrate
- substrate
- mini
- preset
- led backlight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 108
- 239000011521 glass Substances 0.000 claims abstract description 71
- 230000007704 transition Effects 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 17
- 239000012466 permeate Substances 0.000 claims abstract description 5
- 238000002791 soaking Methods 0.000 claims abstract description 4
- 238000007789 sealing Methods 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000007688 edging Methods 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- 230000008569 process Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- -1 acryl Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a method for forming a through hole of a Mini-LED backlight plate and electronic equipment, wherein the method for forming the through hole of the Mini-LED backlight plate comprises the following steps: acquiring a glass substrate with a preset thickness and a preset size; laser emitting a plurality of through hole profiles with preset shapes on the surface of the glass substrate by adopting laser equipment; fixing the glass substrate on a transition substrate; soaking in etching solution, wherein the etching solution permeates through the trace of laser so as to form the through hole with the preset shape. The forming method has the advantages that the forming speed of the through holes on the glass substrate is high, and the through hole structure with the required small size can be formed.
Description
Technical Field
The invention relates to the technical field of semiconductor processes, in particular to a method for forming a through hole of a Mini-LED backlight plate and electronic equipment.
Background
With the continuous development of science and technology, as a novel light emitting device, an LED (Light Emitting Diode ) has the advantages of energy saving, environmental protection, good color rendering property, good response speed and the like compared with the traditional light emitting device, is widely applied to the life and work of people, and brings great convenience to the daily life of people.
Based on Mini-LED chip, the LED chip has the advantages of high color saturation, local dimming, high brightness and energy-saving lamp, and can be applied to backlight display, notebook computer, tablet personal computer, television and the like.
However, based on the backlight plate adopted by the current Mini-LED chip backlight structure, a required through hole structure cannot be formed on the backlight plate effectively.
Disclosure of Invention
In view of the above, the present invention provides a method for forming a through hole of a Mini-LED backlight board and an electronic device, which have the following technical scheme:
a forming method of a Mini-LED backlight plate through hole comprises the following steps:
acquiring a glass substrate with a preset thickness and a preset size;
laser emitting a plurality of through hole profiles with preset shapes on the surface of the glass substrate by adopting laser equipment;
fixing the glass substrate on a transition substrate;
soaking in etching solution, wherein the etching solution permeates through the trace of laser so as to form the through hole with the preset shape.
Preferably, in the forming method, the obtaining the glass substrate with the preset thickness and the preset size includes:
selecting the large-size glass substrate with the preset thickness;
and cutting the large-size glass substrate to form the glass substrate with the preset thickness and the preset size.
Preferably, in the forming method, after the glass substrate having the preset thickness and the preset size is obtained, the forming method further includes:
and carrying out edging and chamfering treatment on the glass substrate.
Preferably, in the forming method, the preset shape is a truncated cone with gradually increasing size in the first direction;
wherein the first direction is perpendicular to the glass substrate and is directed from the transition substrate to the glass substrate.
Preferably, in the forming method, after the fixing of the glass substrate on one transition substrate, the forming method further includes:
and sealing the outer edge of the glass substrate and the transition substrate.
Preferably, in the forming method, the sealing treatment of the outer edge of the glass substrate with the transition substrate includes:
and sealing the outer edge of the glass substrate and the transition substrate by adopting UV glue.
Preferably, in the forming method, the transition substrate is an acryl substrate.
Preferably, in the above forming method, the size of the transition substrate is the same as the size of the glass substrate.
Preferably, in the forming method, the etching solution is a hydrofluoric acid solution.
An electronic device comprising at least a Mini-LED backlight structure;
the Mini-LED backlight structure at least comprises a Mini-LED backlight plate;
the through holes on the Mini-LED backlight plate are formed by the forming method.
Compared with the prior art, the invention has the following beneficial effects:
the method for forming the through hole of the Mini-LED backlight plate provided by the invention comprises the following steps: acquiring a glass substrate with a preset thickness and a preset size; laser emitting a plurality of through hole profiles with preset shapes on the surface of the glass substrate by adopting laser equipment; fixing the glass substrate on a transition substrate; soaking in etching solution, wherein the etching solution permeates through the trace of laser so as to form the through hole with the preset shape. The forming method has the advantages that the forming speed of the through holes on the glass substrate is high, and the through hole structure with the required small size can be formed.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for forming a through hole of a Mini-LED backlight board according to an embodiment of the present invention;
fig. 2-6 are schematic structural views corresponding to the forming method shown in fig. 1 in an embodiment of the present invention;
fig. 7 is a schematic flow chart of another method for forming a through hole of a Mini-LED backlight board according to an embodiment of the present invention;
fig. 8 is a schematic flow chart of a method for forming a through hole of a Mini-LED backlight board according to an embodiment of the present invention;
FIG. 9 is a schematic view of a through hole of a glass substrate according to an embodiment of the present invention;
fig. 10 is a schematic flow chart of a method for forming a through hole of a Mini-LED backlight board according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the inventive process of the present invention, the inventor finds that, at present, the Mini-LED backlight structure mainly adopts a PCB (Printed Circuit Board ) substrate, and is limited to a certain extent in product thickness.
The inventor knows that when the thickness of the PCB substrate is smaller than 0.4mm, when the Mini-LED chip is packaged on the PCB substrate, the problem of glue cracking can occur due to the difference of thermal expansion coefficients of the packaging glue and the PCB material.
And the PCB material has poor heat conduction performance, and when the number of Mini-LED chips is increased. The service life of the Mini-LED chip is shortened.
These problems have prevented the Mini-LED backlight from being further thinned.
Further, based on the current PCB substrate, the aperture on the PCB substrate is large.
Based on the above, the invention provides a method for forming the through hole of the Mini-LED backlight plate, which has higher speed of forming the through hole and can form a through hole structure with a small size.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Referring to fig. 1, fig. 1 is a schematic flow chart of a method for forming a through hole of a Mini-LED backlight board according to an embodiment of the present invention.
The forming method comprises the following steps:
s101: as shown in fig. 2, a glass substrate 11 of a predetermined thickness and a predetermined size is obtained.
In this step, according to the actual requirement, a glass substrate with a preset thickness and a preset size is obtained, and the thickness and the size of the glass substrate are selected, which is not limited in the embodiment of the present invention.
S102: as shown in fig. 3, a laser device is used to laser a plurality of through hole shapes with preset shapes on the surface of the glass substrate 11.
S103: as shown in fig. 4, the glass substrate 11 is fixed to a transition substrate 12.
S104: as shown in fig. 5, the etching solution is immersed in the etching solution, and the etching solution is penetrated through the trace of the laser to form the through hole with the preset shape.
In this embodiment, the etching solution permeates through the trace of the laser, and after a period of time, the etching solution attacks the glass substrate 11, as shown in fig. 6, so that all the patterns to be laser-irradiated are conducted to form the through holes with the preset shape.
The forming method has high forming speed of the through holes and can form the through hole structure with small size.
The etching solution includes, but is not limited to, hydrofluoric acid solution.
Optionally, in another embodiment of the present invention, referring to fig. 7, fig. 7 is a schematic flow chart of another method for forming a through hole of a Mini-LED backlight board according to an embodiment of the present invention.
In step S101, the obtaining the glass substrate 11 with the preset thickness and the preset size includes:
s1011: selecting the large-size glass substrate with the preset thickness;
s1012: the large-sized glass substrate is cut to form the glass substrate 11 of the preset thickness and the preset size.
In this embodiment, based on the large-size glass substrate with a preset thickness, an optimal area in the large-size glass substrate is selected for cutting to form a high-quality glass substrate with a preset thickness and a preset size, so that the occurrence of cracking of the subsequent glass substrate is avoided.
Optionally, in another embodiment of the present invention, referring to fig. 8, fig. 8 is a schematic flow chart of a forming method of a through hole of a Mini-LED backlight board according to an embodiment of the present invention.
After the glass substrate 11 with the preset thickness and the preset size is obtained in step S101, the forming method further includes:
s105: the glass substrate 11 is subjected to edging and chamfering.
In this embodiment, the edges of the glass substrate 11 are subjected to edging and chamfering treatment to prevent breakage of the glass substrate caused by cutting residual chipping cracks in the subsequent manufacturing process.
Optionally, in another embodiment of the present invention, referring to fig. 9, fig. 9 is a schematic view of a shape of a through hole of a glass substrate according to an embodiment of the present invention.
The preset shape is a round table with gradually increased size in the first direction.
Wherein the first direction is perpendicular to the glass substrate 11 and is directed towards the glass substrate 11 by the transition substrate 12.
Optionally, in another embodiment of the present invention, referring to fig. 10, fig. 10 is a schematic flow chart of a forming method of a through hole of a Mini-LED backlight board according to an embodiment of the present invention.
After the glass substrate 11 is fixed on one transition substrate 12 in step S103, the forming method further includes:
s106: and sealing the outer edge of the glass substrate 11 with the transition substrate 12.
In this embodiment, the outer edge of the glass substrate 11 and the outer edge of the transition substrate 12 are sealed, so that the etching solution is prevented from entering between the glass substrate 11 and the transition substrate 12 in the subsequent manufacturing process, and the manufacturing yield of the through hole of the glass substrate 11 is further improved.
Optionally, in another embodiment of the present invention, the sealing the outer edge of the glass substrate 11 with the transition substrate 12 includes:
and sealing the outer edge of the glass substrate 11 and the transition substrate 12 by adopting UV glue.
In this embodiment, the outer edge of the glass substrate 11 and the transition substrate 12 are sealed by using UV glue, so that the sealing effect is good, and the removal of UV glue is simple.
Optionally, in another embodiment of the present invention, the transition substrate 12 is an acrylic substrate.
Alternatively, in another embodiment of the present invention, the size of the transition substrate 12 is the same as the size of the glass substrate 11.
Optionally, based on the foregoing all embodiments of the present invention, in another embodiment of the present invention, an electronic device is further provided, and referring to fig. 11, fig. 11 is a schematic structural diagram of an electronic device provided in the embodiment of the present invention.
The electronic device 13 comprises at least a Mini-LED backlight structure;
the Mini-LED backlight structure at least comprises a Mini-LED backlight plate;
the through holes on the Mini-LED backlight plate are formed through the forming method according to the embodiment of the invention.
In this embodiment, the electronic device 13 includes, but is not limited to, electronic devices such as a backlight display, a notebook, a tablet computer, and a television.
The method for forming the through hole of the Mini-LED backlight plate and the electronic equipment provided by the invention are described in detail, and specific examples are applied to the description of the principle and the implementation mode of the invention, and the description of the above examples is only used for helping to understand the method and the core idea of the invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
It should be noted that, in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described as different from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
It is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include, or is intended to include, elements inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. The forming method of the Mini-LED backlight plate through hole is characterized by comprising the following steps of:
acquiring a glass substrate with a preset thickness and a preset size;
laser emitting a plurality of through hole profiles with preset shapes on the surface of the glass substrate by adopting laser equipment;
fixing the glass substrate on a transition substrate;
soaking in an etching solution, wherein the etching solution permeates through the trace of laser so as to form the through hole with the preset shape;
after the fixing of the glass substrate on one transition substrate, the forming method further includes:
and sealing the outer edge of the glass substrate and the transition substrate.
2. The method of forming of claim 1, wherein the obtaining a glass substrate of a predetermined thickness and a predetermined size comprises:
selecting the large-size glass substrate with the preset thickness;
and cutting the large-size glass substrate to form the glass substrate with the preset thickness and the preset size.
3. The forming method according to claim 1, characterized in that after the glass substrate of a preset thickness and a preset size is obtained, the forming method further comprises:
and carrying out edging and chamfering treatment on the glass substrate.
4. The method of forming according to claim 1, wherein the preset shape is a truncated cone having a size gradually increasing in a first direction;
wherein the first direction is perpendicular to the glass substrate and is directed from the transition substrate to the glass substrate.
5. The method of forming according to claim 1, wherein the sealing the outer edge of the glass substrate with the transition substrate comprises:
and sealing the outer edge of the glass substrate and the transition substrate by adopting UV glue.
6. The method of claim 1, wherein the transition substrate is an acrylic substrate.
7. The method of forming of claim 1, wherein the transition substrate is the same size as the glass substrate.
8. The method of claim 1, wherein the etching solution is a hydrofluoric acid solution.
9. An electronic device, characterized in that the electronic device comprises at least a Mini-LED backlight structure;
the Mini-LED backlight structure at least comprises a Mini-LED backlight plate;
wherein, the through holes on the Mini-LED backlight board are formed by the forming method of any one of claims 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110448071.8A CN112992880B (en) | 2021-04-25 | 2021-04-25 | Mini-LED backlight plate through hole forming method and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110448071.8A CN112992880B (en) | 2021-04-25 | 2021-04-25 | Mini-LED backlight plate through hole forming method and electronic equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112992880A CN112992880A (en) | 2021-06-18 |
| CN112992880B true CN112992880B (en) | 2023-08-15 |
Family
ID=76340089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110448071.8A Active CN112992880B (en) | 2021-04-25 | 2021-04-25 | Mini-LED backlight plate through hole forming method and electronic equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112992880B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011228511A (en) * | 2010-04-21 | 2011-11-10 | Asahi Glass Co Ltd | Glass substrate for semiconductor device through-electrode and manufacturing method thereof |
| CN107540232A (en) * | 2016-06-23 | 2018-01-05 | 奥特司科技株式会社 | The processing method of glass |
| CN107835794A (en) * | 2015-07-10 | 2018-03-23 | 康宁股份有限公司 | The method of continuous manufacturing hole and product related to this in flexible substrate plate |
| JP2018158855A (en) * | 2017-03-22 | 2018-10-11 | 日本電気硝子株式会社 | Manufacturing method of perforated glass substrate |
| JP2019089082A (en) * | 2017-11-13 | 2019-06-13 | ビアメカニクス株式会社 | Laser processing method |
| CN112119499A (en) * | 2018-04-05 | 2020-12-22 | 康宁公司 | System and method for reducing substrate surface damage during via formation |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09107168A (en) * | 1995-08-07 | 1997-04-22 | Mitsubishi Electric Corp | Laser processing method of wiring board, laser processing device of wiring board and carbon dioxide gas laser oscillator for wiring board processing |
| JP2003226551A (en) * | 2002-02-05 | 2003-08-12 | Nippon Sheet Glass Co Ltd | Glass substrate having fine pore and production method therefor |
| JP2009297734A (en) * | 2008-06-11 | 2009-12-24 | Nitto Denko Corp | Adhesive sheet for laser processing and laser processing method |
| US20160347643A1 (en) * | 2015-05-29 | 2016-12-01 | Asahi Glass Company, Limited | Glass substrate manufacturing method |
| US10292275B2 (en) * | 2016-04-06 | 2019-05-14 | AGC Inc. | Method of manufacturing glass substrate that has through hole, method of forming through hole in glass substrate and system for manufacturing glass substrate that has through hole |
| JP6862380B2 (en) * | 2018-03-01 | 2021-04-21 | パナソニック液晶ディスプレイ株式会社 | Display device and manufacturing method of display device |
-
2021
- 2021-04-25 CN CN202110448071.8A patent/CN112992880B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011228511A (en) * | 2010-04-21 | 2011-11-10 | Asahi Glass Co Ltd | Glass substrate for semiconductor device through-electrode and manufacturing method thereof |
| CN107835794A (en) * | 2015-07-10 | 2018-03-23 | 康宁股份有限公司 | The method of continuous manufacturing hole and product related to this in flexible substrate plate |
| CN107540232A (en) * | 2016-06-23 | 2018-01-05 | 奥特司科技株式会社 | The processing method of glass |
| JP2018158855A (en) * | 2017-03-22 | 2018-10-11 | 日本電気硝子株式会社 | Manufacturing method of perforated glass substrate |
| JP2019089082A (en) * | 2017-11-13 | 2019-06-13 | ビアメカニクス株式会社 | Laser processing method |
| CN112119499A (en) * | 2018-04-05 | 2020-12-22 | 康宁公司 | System and method for reducing substrate surface damage during via formation |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112992880A (en) | 2021-06-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20180008723A (en) | Glass articles comprising light extraction features and methods of making same | |
| WO2016169336A1 (en) | Substrate carrier plate, flexible display panel and corresponding manufacturing method therefor, and flexible display device | |
| RU2596800C2 (en) | Method of manufacturing of led matrix and device containing led matrix | |
| CN102709439A (en) | LED (Light emitting diode) ceramic support and manufacturing method thereof | |
| TW201940449A (en) | Through glass via fabrication using a protective material | |
| CN112992880B (en) | Mini-LED backlight plate through hole forming method and electronic equipment | |
| KR20090119420A (en) | Back light unit using single chip led package | |
| CN110112279B (en) | Processing method of thermoelectric separation substrate for LED | |
| JP2022512609A (en) | Systems and methods for forming displays with embedded side electrodes | |
| KR101236715B1 (en) | Production method of led module including chip on board dam using silicon molding type and led module by the production method | |
| CN104022062B (en) | A kind of preparation method of flexible display panels | |
| US9429303B2 (en) | Backlight source and manufacturing method thereof | |
| US11302852B2 (en) | Display panel and method of manufacturing display panel | |
| WO2023226416A1 (en) | Preparation method for chip, and chip | |
| WO2023202174A1 (en) | Pcb and manufacturing method therefor | |
| WO2014107891A1 (en) | Backlight module, printed circuit board and manufacturing method therefor | |
| CN206736346U (en) | Mask plate | |
| CN102194790A (en) | Thermoelectric separated metal chip on board | |
| CN115842073A (en) | Glass-based Mini-LED backlight substrate and preparation method thereof | |
| EP3246958A1 (en) | Method for manufacturing chip-mounting substrate, and chip-mounting substrate | |
| CN113292236A (en) | Mini-LED substrate through hole forming method and electronic equipment | |
| CN111867245A (en) | MiniLED substrate, module and module manufacturing method | |
| CN112399728A (en) | Manufacturing method of side wall bonding pad | |
| KR101956128B1 (en) | Tape type optical component package and manufacturing method thereof | |
| CN111490041B (en) | Mini LED dot matrix lighting equipment and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |