KR101236715B1 - Production method of led module including chip on board dam using silicon molding type and led module by the production method - Google Patents

Abstract

PURPOSE: A method for manufacturing an LED module including a chip one board dam using a silicon forming method and the LED module manufactured by the same are provided to increase the amount of light by easily managing the height of the dam according to the pressure of a press. CONSTITUTION: An LED bare chip is mounted on a printed circuit board. An LED light diffusion region is set around the LED bare chip. Fluorescent silicon is laminated in the LED light diffusion region. Adhesive is coated on the surface of the substrate(S190). A silicon layer is formed on the substrate(S200). [Reference numerals] (AA) Start; (BB) End; (S100) Disk cutting step; (S110) First drilling step; (S120) Electric gilding step; (S130) Light exposure step; (S140) Circuit forming step; (S150) Circuit inspecting step; (S160) PSR step; (S170) Marking printing step; (S180) Planting step; (S190) Adhesive spreading step; (S200) Silicon layer forming step; (S210) V-cutting step; (S220) Silicon dam forming step; (S230) Second drilling step; (S240) Routing step

Description

TECHNICAL METHOD OF LED MODULE INCLUDING CHIP ON BOARD DAM USING SILICON MOLDING TYPE AND LED MODULE BY THE PRODUCTION METHOD}

The present invention eliminates the phenomenon that the phosphor silicon flows due to the height deviation of the chip on board (COB) dam when forming the phosphor silicon on the LED bare chip for protection and fluorescence of the LED bare chip brightness of the LED emitter The present invention relates to a method for manufacturing an LED module including a chip-on-board dam using a silicon forming method and a method for manufacturing an LED module manufactured by the method.

LED (light emitting diode) is a light source using the light emitting phenomenon generated when voltage is applied to the semiconductor, and has been researched over the past several years, which has less power consumption, longer life, brighter and clearer, Therefore, it is possible to produce a variety of lights, it is expected to be widely used for general lighting in various fields such as traffic lights, lighting stands, signs, flashlights, small lamps.

Such LED devices are gradually developed into high-brightness LED devices and manufactured and sold as various lamps for indoor lighting.In order to have suitable brightness when using them as indoor lighting, a plurality of light emitting diode devices are arranged vertically or horizontally, or high brightness LED devices are used. One or a plurality of arrays may be used as one light source, and in particular, a reflector may be further configured to reflect light in consideration of a range and efficiency to be illuminated.

In order to implement such an LED light source, the heat generated from the LED is efficiently dissipated, and a plurality of LED bare chips are not only arranged to obtain illumination of a uniform brightness desired, but also the LED bare chips to protect the LED bare chips. The protective layer is formed on the peripheral area by applying liquid phosphor silicon and curing the same.

When the liquid phosphor silicon is applied, a chip-on-board dam having a predetermined height is formed as a boundary wall around the LED bare chip, and the phosphor-silicon is included inside the chip-on-board dam to prevent the liquid-phase phosphor from spreading unevenly.

1 is a schematic view of a conventional LED chip-on-board type LED module.

As shown in FIG. 1, the silk printing type process in the production of the LED substrate is repeated on the surface of the substrate by using the chip-on-board dam ink 4 to 5 times to form a height of 250 μm. Ink bleeding or flying occurs, thereby causing a deviation of 50 μm to 100 μm from the height of the chip-on-board dam 10, which causes the LED bare chip 20 in the chip-on-board dam 10 on the substrate. In order to form the phosphor silicon layer 30 to protect the liquid crystal silicon, a phenomenon in which phosphor silicon overflows at a low portion occurs, and the phosphor silicon layer 30 is unevenly formed, thereby causing the LED to be formed. There is a problem in that the defective rate of uneven brightness of light generated from the bare chip 20 increases.

SUMMARY OF THE INVENTION An object of the present invention is to provide a chip on board type LED module using a silicon method in which a silicon dam is press-molded on the surface of a substrate using a silicon molding press to eliminate the deviation of the height of the chip on board dam to solve the above problems. Manufacturing method of LED module including chip-on-board dam using silicon forming method to uniformly raise the dam height of silicon chip-on-board through manufacturing method to eliminate phenomena overflowing phosphor silicon And to provide an LED module manufactured by the manufacturing method.

The present invention is a means for achieving the above object, by mounting an LED bare chip on a printed circuit board, the phosphor silicon is laminated on the LED light diffusion region is set around the LED bare chip, the predetermined LED light diffusion region In the method for forming a chip-on-board dam around the LED light diffusion region so that only the phosphor silicon can be stacked, and the phosphor-silicon is laminated in the chip-on-board dam, the chip-on-board dam is formed An adhesive coating step of applying an adhesive to a surface of the substrate to bond the phosphor silicon to form a surface of the substrate; A silicon layer forming step of applying silicon to the surface of the formed substrate after performing the adhesive coating step and then pressing the film by pressing to form a silicon layer to be horizontal on the surface of the substrate; V-cutting step of creating a V-shaped groove along the longitudinal edge of the LED light diffusion region to remove the silicon layer in the region to which the LED bare chip is attached to the silicon layer formed in the silicon layer forming step; And a silicon dam forming step of forming a silicon dam by removing a silicon layer between the V-shaped grooves on both sides formed through the vcutting step. It provides a manufacturing method.

In addition, it provides a chip-on-board type LED module using the silicon molding method manufactured by the above manufacturing method.

According to the LED module manufacturing method including the chip-on-board dam using the silicon molding method according to the present invention and the LED module manufactured by the manufacturing method, the height of the silicon molding press can be easily managed according to the pressure of the silicone By preventing flow, the brightness of the light generated from the LED bay chip is uniform, reducing the defect rate, and the amount of light is 20% higher than that of the conventional silk type.

1 is a schematic diagram of a conventional LED chip-on-board type LED module,
2 is a manufacturing flowchart of a chip on board type LED module using a silicon molding method according to an embodiment of the present invention,
Figure 3 is a molding process of the chip-on-board type LED module using a silicon molding method according to an embodiment of the present invention,
Figure 4 is a schematic diagram of a chip on board type LED module using a silicon molding method according to an embodiment of the present invention.

Hereinafter, in order to enable those skilled in the art to easily carry out the present invention, a method of manufacturing an LED module including a chip-on-board dam using a silicon forming method according to the present invention and the manufacturing method With reference to the accompanying drawings, the configuration and operation of an embodiment of the LED module manufactured by will be described in detail.

2 is a manufacturing flowchart of a chip on board type LED module using a silicon molding method according to an embodiment of the present invention, Figure 3 is a molding process diagram of a chip on board type LED module using a silicon molding method according to an embodiment of the present invention.

As shown in Figure 2 and 3, the manufacturing method of the LED module including the chip-on-board dam using a silicon molding method is a disc cutting step (S100) to cut a disk of a predetermined size and the heat radiation hole and the guide hole in the disk Generating the first drill step (S110); A copper plating step of plating the substrate with copper (S120); An exposure step (S130) of exposing a circuit to the plated substrate as a pattern image; A circuit forming step (S140) of etching the exposed substrate to form a circuit; A circuit inspection step (S150) of inspecting the formed circuit; PSR (Photo Imageable Solder Resist) step (S160) for coating on the portion other than the circuit; Marking printing step (S170) for printing the symbol or typewriter information necessary for using the substrate; A plating step (S180) for plating a portion requiring high electrical characteristics and an adhesive coating step (S190) for silicon adhesion; Forming a silicon layer (S200); V-cutting step (S210) for generating a V-shaped groove exceeding both sides of the LED bare chip in the position where the LED bare chip is to be attached; A silicon dam forming step (S220) of removing silicon formed between the formed V-grooves; The second drill step (S230) for generating the guide and the silver-plated lead wire hole and the routing step (S240) for processing the appearance that meets the user's requirements.

In the first drill step (S110), as shown in FIG. 3B, heat dissipation holes are formed through the bottom of the substrate at regular intervals so as to emit high heat generated from the high-power LED bare chip on the substrate formed in the disc cutting step. The substrates are fabricated at the same time, and guide holes are formed for the positions of the cuts and the intervals required for the circuit formation for cutting the single substrates.

In the copper plating step (S120), as shown in FIG. 3C, the copper 110 is plated over the entire surface of the heat dissipation hole, the guide hole, and the substrate formed in the first drill step (S110).

Copper plated areas on the substrate are used to form circuit patterns or as heat sinks.

In the exposure step S130, as shown in FIG. 3D, the pattern image 120 is reproduced through photo exposure on the surface of the substrate plated with copper in the copper plating step S120.

In the circuit forming step S140, as shown in FIG. 3E, the copper foil is etched using the pattern image 120 exposed through the exposure step S130 to form a circuit.

In the circuit inspection step (S150), as illustrated in FIG. 3F, whether the formed circuit is normally formed is inspected through, for example, AOI (Automated Optical Inspection).

In the PSR step S160, as shown in FIG. 3G, a permanent ink having durability on the surface of the substrate, the heat dissipation hole, and the guide hole, excluding the soldering part, is formed through the circuit forming step S140. The coating layer 130 is formed.

By coating the surface of the substrate, the heat dissipation hole and the guide hole in the PSR step (S160), it is possible to protect the circuit and to prevent the occurrence of solder bridges that may occur in subsequent processes.

In the marking printing step S170, as shown in FIG. 3H, a customer name or logo, a final product code, a part number or a location of a part, a part, may be located on a surface other than the circuit formed through the PSR step S160. The symbol or typewriter information to be displayed on the PCB such as the type, rated capacity, and the like is printed on the surface of the substrate using the invariant ink 140.

In the plating step (S180), as shown in FIG. 3I, gold, silver, or nickel (150) at a portion where a high electrical characteristic is required due to electrical connection or frequent detachment in a circuit etched through the copper foil etching step (S140). Plate.

Preferably, the plating step (S180) is plated with a metal 150 in which nickel is mixed 5 ~ 7㎛ silver and 2㎛.

The following steps are performed to protect a LED bare chip on the stacked substrate and to generate a chip-on-board dam using a silicon molding method to uniformly spread the brightness of light emitted from the LED bare chip. .

In the adhesive coating step (S190), as shown in Figure 3j, the adhesive is applied to the surface of the substrate to bond the phosphor silicon for forming the chip on board dam to the surface of the substrate.

In the silicon layer forming step (S200), as shown in FIG. 3K, in the adhesive applying step (S190), a mold is disposed surrounding the area to be coated with silicon on the applied adhesive, and the silicon is coated in the mold. Then, it is pressed by a press to form a silicon layer 170 having the same height from the substrate.

In the breaking step S210, as shown in FIG. 3L, an LED is removed to remove the silicon layer 170 in the region where the LED bare chip is attached to the silicon layer 170 formed in the silicon layer forming step S200. A V-shaped groove is created along the longitudinal edge of the light diffusion region.

In the silicon dam forming step (S220), as shown in FIG. 3M, the silicon layer is formed by removing the silicon layer between the V-shaped grooves on both sides formed through the vcutting step (S210).

4 is a schematic view of a chip on board type LED module using a silicon molding method according to an embodiment of the present invention.

As shown in Figure 4, in the silicon layer forming step (S200) after pressing the final surface of the substrate with a high pressure press to the silicon layer 170, the silicon layer separated through the breaking step (S210) ( 170 is removed so that the height difference of the silicon dam formed in the silicon dam forming step (S220) does not occur, and thus the phenomenon of overflowing the phosphor silicon 30 protecting the LED bare chip 20 is eliminated. Make sure that the brightness of light generated from) is uniform.

In the second drill step (S230), as shown in FIG. 3M, the guide and the silver plated lead wire holes are processed in the substrate on which the silicon dam forming step (S220) is performed.

In the routing step (S240), as shown in FIG. 3O, the formed substrate is cut to form a final product size and shape required by a user to generate a plurality of LED substrates.

In the present specification, a method of manufacturing an LED module including a chip-on-board dam using a silicon molding method according to the present invention and a preferred embodiment of the LED module manufactured by the manufacturing method have been described, but the present invention is not limited thereto. The invention may be practiced in various ways within the scope of the claims and the accompanying drawings, which also belong to the scope of the invention.

10 Ink 20 LED Bare Chip
30: chip on board dam 40: phosphor silicon
100: substrate 110: copper
120: pattern image 130: coating layer
140: immutable ink 150: gold, silver, nickel or an alloy of silver and nickel
160: adhesive 170: silicon layer
S100: Disc cutting step S110: 1st drill step
S120: copper plating step S130: exposure step
S140: circuit forming step S150: circuit inspection step
S160: PSR step S170: marking printing step
S180: plating step S190: adhesive coating step
S200: silicon layer forming step S210: vcutting step
S220: silicon dam forming step S230: second drill step
S240: routing step

Claims (3)

The LED bare chip is mounted on a printed circuit board, and the phosphor silicon is stacked in the LED light diffusion region set around the LED bare chip, but the phosphor silicon is stacked around the predetermined LED light diffusion region. A method of manufacturing a LED module by forming a chip-on-board dam in a stack and stacking phosphor silicon in the chip-on-board dam,
The chip-on-board dam is formed by applying an adhesive to the surface of the substrate to bond the phosphor silicon for forming the chip-on-board dam to the surface of the substrate;
Silicon layer forming a silicon layer having the same height from the substrate by arranging a mold surrounding the area to be applied silicon on the adhesive applied in the adhesive coating step, applying the silicon in the mold, and then pressing by pressing Forming step;
V-cutting step of creating a V-shaped groove along the longitudinal edge of the LED light diffusion region to remove the silicon layer in the region to which the LED bare chip is attached to the silicon layer formed in the silicon layer forming step; And
Fabrication of an LED module including a chip-on-board dam using a silicon forming method, characterized in that the silicon dam forming step of forming a silicon dam by removing the silicon layer between the V-shaped grooves formed through the v-cutting step; Way.
delete Chip on board type LED module using a silicon molding method manufactured by the method of claim 1.

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