CN112970126B - 发光元件 - Google Patents

发光元件 Download PDF

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Publication number
CN112970126B
CN112970126B CN201980073263.6A CN201980073263A CN112970126B CN 112970126 B CN112970126 B CN 112970126B CN 201980073263 A CN201980073263 A CN 201980073263A CN 112970126 B CN112970126 B CN 112970126B
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CN
China
Prior art keywords
light emitting
pad
light
type semiconductor
semiconductor layer
Prior art date
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CN201980073263.6A
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English (en)
Chinese (zh)
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CN112970126A (zh
Inventor
李贞勳
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Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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Publication of CN112970126A publication Critical patent/CN112970126A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
CN201980073263.6A 2018-11-13 2019-11-12 发光元件 Active CN112970126B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862760381P 2018-11-13 2018-11-13
US62/760,381 2018-11-13
US16/676,711 US11967605B2 (en) 2018-11-13 2019-11-07 Light emitting device
US16/676,711 2019-11-07
PCT/KR2019/015342 WO2020101323A1 (ko) 2018-11-13 2019-11-12 발광 소자

Publications (2)

Publication Number Publication Date
CN112970126A CN112970126A (zh) 2021-06-15
CN112970126B true CN112970126B (zh) 2024-08-23

Family

ID=70552001

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201980073263.6A Active CN112970126B (zh) 2018-11-13 2019-11-12 发光元件
CN201921951334.1U Active CN210743981U (zh) 2018-11-13 2019-11-12 发光元件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201921951334.1U Active CN210743981U (zh) 2018-11-13 2019-11-12 发光元件

Country Status (7)

Country Link
US (2) US11967605B2 (enExample)
EP (1) EP3882990A4 (enExample)
JP (1) JP7574182B2 (enExample)
KR (1) KR102794269B1 (enExample)
CN (2) CN112970126B (enExample)
BR (1) BR112021009132A2 (enExample)
WO (1) WO2020101323A1 (enExample)

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KR101541754B1 (ko) 2014-12-23 2015-08-05 극동크리트 주식회사 겹침형 방수시트 및 그 제조 방법 및 이를 이용한 방수 공법
US11967605B2 (en) * 2018-11-13 2024-04-23 Seoul Viosys Co., Ltd. Light emitting device
EP3671812B1 (en) * 2018-12-19 2022-02-09 IMEC vzw A method for bonding and interconnecting semiconductor chips
US11211528B2 (en) 2019-03-13 2021-12-28 Seoul Viosys Co., Ltd. Light emitting device for display and display apparatus having the same
WO2021119906A1 (zh) * 2019-12-16 2021-06-24 厦门三安光电有限公司 一种发光二极管
US11880052B2 (en) 2020-11-20 2024-01-23 Applied Materials, Inc. Structure and method of mirror grounding in LCoS devices
US12055821B2 (en) 2020-11-20 2024-08-06 Applied Materials, Inc. Structure and method of bi-layer pixel isolation in advanced LCOS back-plane
US11881539B2 (en) * 2020-11-20 2024-01-23 Applied Materials, Inc. Structure and method of advanced LCoS back-plane having highly reflective pixel via metallization
US11908678B2 (en) 2021-01-14 2024-02-20 Applied Materials, Inc. Method of CMP integration for improved optical uniformity in advanced LCOS back-plane
JP7432844B2 (ja) 2021-12-17 2024-02-19 日亜化学工業株式会社 窒化物半導体発光素子
KR102599275B1 (ko) * 2022-01-25 2023-11-07 주식회사 썬다이오드코리아 수직 적층 구조를 가지는 마이크로 디스플레이의 화소
WO2024129810A1 (en) * 2022-12-16 2024-06-20 Lumileds Llc Die metallization for dense packed arrays
WO2026053780A1 (ja) * 2024-09-04 2026-03-12 学校法人名城大学 半導体発光素子と半導体発光装置、及びその製造方法

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JP2004014993A (ja) * 2002-06-11 2004-01-15 Seiko Epson Corp 面発光型発光素子およびその製造方法、面発光型発光素子の実装構造、光モジュール、光伝達装置
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EP2980871A1 (en) * 2013-03-28 2016-02-03 Toshiba Hokuto Electronics Corp. Light-emitting device and production method therefor
CN210743981U (zh) * 2018-11-13 2020-06-12 首尔伟傲世有限公司 发光元件

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US5793405A (en) * 1994-08-24 1998-08-11 Rohm Co. Ltd. LED printhead, LED array chip therefor and method of making LED array chip
JP2004014993A (ja) * 2002-06-11 2004-01-15 Seiko Epson Corp 面発光型発光素子およびその製造方法、面発光型発光素子の実装構造、光モジュール、光伝達装置
JP2005072323A (ja) * 2003-08-26 2005-03-17 Oki Data Corp 半導体装置
EP2980871A1 (en) * 2013-03-28 2016-02-03 Toshiba Hokuto Electronics Corp. Light-emitting device and production method therefor
CN210743981U (zh) * 2018-11-13 2020-06-12 首尔伟傲世有限公司 发光元件

Also Published As

Publication number Publication date
JP7574182B2 (ja) 2024-10-28
EP3882990A1 (en) 2021-09-22
CN112970126A (zh) 2021-06-15
KR20210076013A (ko) 2021-06-23
CN210743981U (zh) 2020-06-12
US11967605B2 (en) 2024-04-23
JP2022505543A (ja) 2022-01-14
EP3882990A4 (en) 2022-08-10
US20200152691A1 (en) 2020-05-14
KR102794269B1 (ko) 2025-05-15
WO2020101323A1 (ko) 2020-05-22
BR112021009132A2 (pt) 2021-08-10
US20240274643A1 (en) 2024-08-15

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