CN112970119B - 发光元件 - Google Patents

发光元件 Download PDF

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Publication number
CN112970119B
CN112970119B CN201980072379.8A CN201980072379A CN112970119B CN 112970119 B CN112970119 B CN 112970119B CN 201980072379 A CN201980072379 A CN 201980072379A CN 112970119 B CN112970119 B CN 112970119B
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CN
China
Prior art keywords
light emitting
pattern
emitting portion
light
type semiconductor
Prior art date
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Active
Application number
CN201980072379.8A
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English (en)
Chinese (zh)
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CN112970119A (zh
Inventor
李贞勳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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Publication of CN112970119A publication Critical patent/CN112970119A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN201980072379.8A 2018-11-05 2019-11-04 发光元件 Active CN112970119B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862755652P 2018-11-05 2018-11-05
US62/755,652 2018-11-05
US16/670,293 US11158665B2 (en) 2018-11-05 2019-10-31 Light emitting device
US16/670,293 2019-10-31
PCT/KR2019/014824 WO2020096304A1 (ko) 2018-11-05 2019-11-04 발광 소자

Publications (2)

Publication Number Publication Date
CN112970119A CN112970119A (zh) 2021-06-15
CN112970119B true CN112970119B (zh) 2024-10-29

Family

ID=70459099

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201980072379.8A Active CN112970119B (zh) 2018-11-05 2019-11-04 发光元件
CN201921886775.8U Active CN211350648U (zh) 2018-11-05 2019-11-04 发光元件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201921886775.8U Active CN211350648U (zh) 2018-11-05 2019-11-04 发光元件

Country Status (7)

Country Link
US (3) US11158665B2 (https=)
EP (1) EP3879576A4 (https=)
JP (1) JP7444873B2 (https=)
KR (1) KR20210073536A (https=)
CN (2) CN112970119B (https=)
BR (1) BR112021008682A2 (https=)
WO (1) WO2020096304A1 (https=)

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US11158665B2 (en) * 2018-11-05 2021-10-26 Seoul Viosys Co., Ltd. Light emitting device
US11211528B2 (en) * 2019-03-13 2021-12-28 Seoul Viosys Co., Ltd. Light emitting device for display and display apparatus having the same
DE102019119891A1 (de) * 2019-07-23 2021-01-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
KR102906031B1 (ko) * 2019-11-15 2025-12-30 서울바이오시스 주식회사 디스플레이용 발광 소자를 가지는 디스플레이 패널
US11437353B2 (en) * 2019-11-15 2022-09-06 Seoul Viosys Co., Ltd. Light emitting device for display and display apparatus having the same
WO2021119906A1 (zh) * 2019-12-16 2021-06-24 厦门三安光电有限公司 一种发光二极管
US11862616B2 (en) * 2020-02-26 2024-01-02 Seoul Viosys Co., Ltd. Multi wavelength light emitting device and method of fabricating the same
CN214672619U (zh) * 2020-05-28 2021-11-09 首尔伟傲世有限公司 发光元件及具有该发光元件的显示装置
US12040344B2 (en) * 2020-05-28 2024-07-16 Seoul Viosys Co., Ltd. Light emitting device and display apparatus having the same
JP7613127B2 (ja) * 2021-01-22 2025-01-15 セイコーエプソン株式会社 発光装置、プロジェクター
US12317646B2 (en) * 2021-04-27 2025-05-27 Samsung Electronics Co., Ltd. Light-emitting device and display apparatus including the same
EP4430668A4 (en) * 2021-11-08 2025-10-08 Lumileds Llc DOUBLE JUNCTION LED WITH NON-OVERLAPPING SEGMENTATION
KR102599275B1 (ko) * 2022-01-25 2023-11-07 주식회사 썬다이오드코리아 수직 적층 구조를 가지는 마이크로 디스플레이의 화소
US12444716B2 (en) 2022-03-21 2025-10-14 Lextar Electronics Corporation Light-emitting diode device
KR20260050706A (ko) * 2024-10-08 2026-04-15 삼성전자주식회사 발광 소자, 이를 포함하는 디스플레이 장치 및 그 제조 방법

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US5696389A (en) * 1994-03-15 1997-12-09 Kabushiki Kaisha Toshiba Light-emitting semiconductor device
CN211350648U (zh) * 2018-11-05 2020-08-25 首尔伟傲世有限公司 发光元件

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JP2008277176A (ja) * 2007-05-01 2008-11-13 Hitachi Maxell Ltd 光学デバイス、及び液晶表示装置
CN201134433Y (zh) * 2007-12-11 2008-10-15 鑫谷光电股份有限公司 发多色光的半导体二极管芯片
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CN102593303A (zh) * 2011-01-05 2012-07-18 晶元光电股份有限公司 具有栓塞的发光元件
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CN211350648U (zh) * 2018-11-05 2020-08-25 首尔伟傲世有限公司 发光元件

Also Published As

Publication number Publication date
US12087804B2 (en) 2024-09-10
CN211350648U (zh) 2020-08-25
WO2020096304A1 (ko) 2020-05-14
CN112970119A (zh) 2021-06-15
JP2022505883A (ja) 2022-01-14
US11158665B2 (en) 2021-10-26
US20210408101A1 (en) 2021-12-30
EP3879576A1 (en) 2021-09-15
US20200144326A1 (en) 2020-05-07
KR20210073536A (ko) 2021-06-18
JP7444873B2 (ja) 2024-03-06
EP3879576A4 (en) 2022-08-03
US20240405055A1 (en) 2024-12-05
BR112021008682A2 (pt) 2021-11-09

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