KR20210073536A - 발광 소자 - Google Patents

발광 소자 Download PDF

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Publication number
KR20210073536A
KR20210073536A KR1020217011688A KR20217011688A KR20210073536A KR 20210073536 A KR20210073536 A KR 20210073536A KR 1020217011688 A KR1020217011688 A KR 1020217011688A KR 20217011688 A KR20217011688 A KR 20217011688A KR 20210073536 A KR20210073536 A KR 20210073536A
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KR
South Korea
Prior art keywords
light emitting
pattern
semiconductor layer
electrically connected
via pattern
Prior art date
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Pending
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KR1020217011688A
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English (en)
Korean (ko)
Inventor
이정훈
Original Assignee
서울바이오시스 주식회사
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Publication of KR20210073536A publication Critical patent/KR20210073536A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H01L27/156—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H01L33/38—
    • H01L33/56—
    • H01L33/62—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
KR1020217011688A 2018-11-05 2019-11-04 발광 소자 Pending KR20210073536A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862755652P 2018-11-05 2018-11-05
US62/755,652 2018-11-05
US16/670,293 US11158665B2 (en) 2018-11-05 2019-10-31 Light emitting device
US16/670,293 2019-10-31
PCT/KR2019/014824 WO2020096304A1 (ko) 2018-11-05 2019-11-04 발광 소자

Publications (1)

Publication Number Publication Date
KR20210073536A true KR20210073536A (ko) 2021-06-18

Family

ID=70459099

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217011688A Pending KR20210073536A (ko) 2018-11-05 2019-11-04 발광 소자

Country Status (7)

Country Link
US (3) US11158665B2 (https=)
EP (1) EP3879576A4 (https=)
JP (1) JP7444873B2 (https=)
KR (1) KR20210073536A (https=)
CN (2) CN211350648U (https=)
BR (1) BR112021008682A2 (https=)
WO (1) WO2020096304A1 (https=)

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US11158665B2 (en) * 2018-11-05 2021-10-26 Seoul Viosys Co., Ltd. Light emitting device
US11211528B2 (en) * 2019-03-13 2021-12-28 Seoul Viosys Co., Ltd. Light emitting device for display and display apparatus having the same
DE102019119891A1 (de) * 2019-07-23 2021-01-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
US11437353B2 (en) * 2019-11-15 2022-09-06 Seoul Viosys Co., Ltd. Light emitting device for display and display apparatus having the same
CN213071133U (zh) * 2019-11-15 2021-04-27 首尔伟傲世有限公司 显示器用发光元件及显示装置
CN111433921B (zh) * 2019-12-16 2023-08-15 厦门三安光电有限公司 一种发光二极管
US11862616B2 (en) * 2020-02-26 2024-01-02 Seoul Viosys Co., Ltd. Multi wavelength light emitting device and method of fabricating the same
US12040344B2 (en) * 2020-05-28 2024-07-16 Seoul Viosys Co., Ltd. Light emitting device and display apparatus having the same
JP7613127B2 (ja) * 2021-01-22 2025-01-15 セイコーエプソン株式会社 発光装置、プロジェクター
US12317646B2 (en) * 2021-04-27 2025-05-27 Samsung Electronics Co., Ltd. Light-emitting device and display apparatus including the same
KR102698833B1 (ko) * 2021-11-08 2024-08-27 루미레즈 엘엘씨 비중첩 세그먼트화를 갖는 이중 접합 led
KR102599275B1 (ko) * 2022-01-25 2023-11-07 주식회사 썬다이오드코리아 수직 적층 구조를 가지는 마이크로 디스플레이의 화소
US12444716B2 (en) 2022-03-21 2025-10-14 Lextar Electronics Corporation Light-emitting diode device
KR20260050706A (ko) * 2024-10-08 2026-04-15 삼성전자주식회사 발광 소자, 이를 포함하는 디스플레이 장치 및 그 제조 방법

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JPH07254732A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体発光装置
JP4214704B2 (ja) * 2002-03-20 2009-01-28 日亜化学工業株式会社 半導体素子
US7271420B2 (en) 2004-07-07 2007-09-18 Cao Group, Inc. Monolitholic LED chip to emit multiple colors
KR20060023634A (ko) * 2004-09-10 2006-03-15 (주)케이디티 전면 유기 발광 소자 및 그 제조방법
KR100740309B1 (ko) * 2005-01-10 2007-07-18 (주)케이디티 휘어질 수 있는 풀 칼라 유기 발광 디스플레이 및 그제조방법
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TWI508321B (zh) * 2008-07-21 2015-11-11 相豐科技股份有限公司 發光二極體及其形成方法
JP5185308B2 (ja) * 2010-03-09 2013-04-17 株式会社東芝 半導体発光装置の製造方法
CN102593303A (zh) * 2011-01-05 2012-07-18 晶元光电股份有限公司 具有栓塞的发光元件
US9293641B2 (en) * 2011-11-18 2016-03-22 Invensas Corporation Inverted optical device
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KR101961307B1 (ko) * 2012-06-08 2019-03-25 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
TWI572068B (zh) * 2012-12-07 2017-02-21 晶元光電股份有限公司 發光元件
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Also Published As

Publication number Publication date
US20210408101A1 (en) 2021-12-30
CN112970119A (zh) 2021-06-15
BR112021008682A2 (pt) 2021-11-09
WO2020096304A1 (ko) 2020-05-14
US11158665B2 (en) 2021-10-26
EP3879576A4 (en) 2022-08-03
CN112970119B (zh) 2024-10-29
EP3879576A1 (en) 2021-09-15
US12087804B2 (en) 2024-09-10
US20240405055A1 (en) 2024-12-05
JP2022505883A (ja) 2022-01-14
US20200144326A1 (en) 2020-05-07
CN211350648U (zh) 2020-08-25
JP7444873B2 (ja) 2024-03-06

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