CN112968679A - Push-pull power amplification system and radio frequency front-end module - Google Patents
Push-pull power amplification system and radio frequency front-end module Download PDFInfo
- Publication number
- CN112968679A CN112968679A CN202110182311.4A CN202110182311A CN112968679A CN 112968679 A CN112968679 A CN 112968679A CN 202110182311 A CN202110182311 A CN 202110182311A CN 112968679 A CN112968679 A CN 112968679A
- Authority
- CN
- China
- Prior art keywords
- input
- output
- balun
- amplifying transistor
- control switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003321 amplification Effects 0.000 title claims abstract description 57
- 238000003199 nucleic acid amplification method Methods 0.000 title claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 238000006243 chemical reaction Methods 0.000 claims abstract description 64
- 230000017525 heat dissipation Effects 0.000 abstract description 9
- 238000000034 method Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 238000004804 winding Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/26—Push-pull amplifiers; Phase-splitters therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention belongs to the technical field of amplifying circuits, and particularly relates to a push-pull power amplifying system. It comprises a substrate; an input conversion circuit configured to convert an input radio frequency signal into a first differential signal and a second differential signal; the first chip arranged on the substrate comprises a first power amplifier, a second power amplifier and a third power amplifier, wherein the first power amplifier is configured to receive a first differential signal and amplify and output the first differential signal; the second chip arranged on the substrate comprises a second power amplifier and is configured to receive the second differential signal, amplify the second differential signal and output the amplified second differential signal, and the first chip and the second chip are arranged on the substrate in a relatively separated mode; an output conversion circuit configured to convert the amplified first differential signal and the amplified second differential signal into an output radio frequency signal. Therefore, the invention realizes that the heat dissipation of the push-pull power amplification system is improved and the power loss is reduced by respectively arranging the first power amplifier and the second power amplifier on different chips.
Description
Technical Field
The invention belongs to the field of amplifying circuits, and particularly relates to a push-pull power amplifying system and a radio frequency front-end module.
Background
The push-pull power amplifying circuit is used as a core radio frequency unit in a communication system, and the performance characteristics of the push-pull power amplifying circuit have great influence on the overall indexes of the system and influence the transmission capacity of the communication system. The push-pull power amplifying circuit can achieve high power, high efficiency, small distortion and relatively balanced overall performance. At present, because a transistor in a push-pull power amplification circuit can generate certain heat in the working process, the heat dissipation performance of the push-pull power amplifier is poor, the performance of the push-pull power amplifier is seriously influenced, and the power consumption is improved.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the push-pull power amplification system is provided for solving the problem of heat dissipation of the push-pull power amplifier in the prior art.
To solve the above technical problem, an embodiment of the present invention provides a push-pull power amplifying system, including:
a substrate;
an input conversion circuit configured to convert an input radio frequency signal into a first differential signal and a second differential signal;
a first chip arranged on a substrate, wherein the first chip comprises a first power amplifier and is configured to receive the first differential signal and amplify and output the first differential signal;
a second chip disposed on the substrate, the second chip including a second power amplifier configured to receive the second differential signal and amplify and output the second differential signal, the first chip and the second chip being disposed on the substrate in a relatively separated manner;
an output conversion circuit configured to convert the amplified first differential signal and the amplified second differential signal into an output radio frequency signal.
Optionally, the input conversion circuit comprises a first input balun, the output conversion circuit comprises a first output balun, the first power amplifier comprises a first amplifying transistor, and the second power amplifier comprises a second amplifying transistor;
the first input balun comprises a plurality of first input terminals, the first input terminals of the first input balun are configured to receive the input radio frequency signal, and the second input terminals are connected with a ground terminal or a power terminal;
the first input balun comprises a plurality of first output ends, the first output end of the first input balun is connected with the input end of the first amplifying transistor, the output end of the first amplifying transistor is connected with the first input end of the output balun, the second output end of the first input balun is connected with the input end of the second amplifying transistor, and the output end of the second amplifying transistor is connected with the second input end of the first output balun;
the first input balun comprises a primary coil and a secondary coil, the primary coil is provided with a plurality of primary input end points arranged at different positions, each primary output end point is correspondingly connected with an output end of a primary control switch, the input ends of the primary control switches are respectively connected with the first input ends, the secondary coil is provided with a plurality of secondary output end points arranged at different positions, each secondary output end point is correspondingly connected with an input end of a secondary control switch, and the output ends of the secondary control switches are respectively connected with the first output ends;
the primary control switch and the secondary control switch are turned on or off according to the control signal, so that the input radio frequency signals of different frequency bands are adapted.
Optionally, the first input balun includes two first input ends and two first output ends, the primary coil includes a first primary input end point and a first primary control switch, a second primary input end point and a second primary control switch, which are correspondingly connected, and the secondary coil includes a first secondary output end point and a first secondary control switch, a second secondary output end point and a second secondary control switch, which are correspondingly connected;
the input end of the first main-level control switch is connected with one first output end, the output end of the first main-level control switch is connected with the first main-level input end point, the input end of the second main-level control switch is connected with the other first input end, and the output end of the second main-level control switch is connected with the second main-level input end point;
the input end of the first secondary control switch is connected with the first secondary output end point, the output end of the first secondary control switch is connected with one first output end, the input end of the second secondary control switch is connected with the second secondary output end point, and the output end of the second secondary control switch is connected with the other first output end;
when the first input balun is configured to receive a first input radio frequency signal, the first primary control switch and the first secondary control switch are closed, and the second primary control switch and the second secondary control switch are open;
when the first input balun is configured to receive a second input radio frequency signal, the second primary control switch and the second secondary control switch are closed, and the first primary control switch and the first secondary control switch are open.
Optionally, the input conversion circuit includes a first input balun and a second input balun, the output conversion circuit further includes a first output balun and a second output balun, the first power amplifier includes a first amplifying transistor and a third amplifying transistor, and the second power amplifier includes a second amplifying transistor and a fourth amplifying transistor;
a first input end of the first input balun is configured to receive a first input radio frequency signal, a second input end of the first input balun is connected with a ground end or a power supply end, a first output end of the first input balun is connected with an input end of the first amplifying transistor, an output end of the first amplifying transistor is connected with a first input end of the first output balun, a second output end of the first input balun is connected with an input end of the second amplifying transistor, and an output end of the second amplifying transistor is connected with a second input end of the first output balun;
the first input end of the second input balun is configured to receive a second input radio frequency signal, the second input end of the second input balun is connected to a ground end or a power supply end, the first output end of the second input balun is connected to the input end of the third amplifying transistor, the output end of the third amplifying transistor is connected to the first input end of the second output balun, the second output end of the second input balun is connected to the input end of the fourth amplifying transistor, and the output end of the fourth amplifying transistor is connected to the second input end of the second output balun.
Optionally, the first control chip is disposed on the substrate, and the first control chip is disposed between the first chip and the second chip of the substrate, and the first control chip is configured to control the plurality of primary control switches and the plurality of secondary control switches in the first input balun to be turned on or off.
Optionally, the amplifier further comprises a control chip set disposed on the substrate, the control chip set is disposed between the first chip and the second chip of the substrate, the control chip set includes a first sub-control chip and a second sub-control chip, the first sub-control chip is configured to control bias signals of the first amplifying transistor and the second amplifying transistor, and the second sub-control chip is configured to control bias signals of the third amplifying transistor and the fourth amplifying transistor.
Optionally, the third amplifying transistor is disposed on a side of the first amplifying transistor away from the control chip set, the fourth amplifying transistor is disposed on a side of the second amplifying transistor away from the control chip set, the first amplifying transistor and the second amplifying transistor are both adjacent to the control chip set, the first amplifying transistor and the second amplifying transistor are configured to amplify a first input radio frequency signal, and the third amplifying transistor and the fourth amplifying transistor are configured to amplify a second input radio frequency signal, where a frequency band of the first input radio frequency signal is greater than a frequency band of the second input radio frequency signal.
Optionally, the first input balun disposed on the substrate is disposed adjacent to the first amplifying transistor and the second amplifying transistor; the second input balun disposed on the substrate is disposed adjacent to the third amplifying transistor and the fourth amplifying transistor; the first output balun is disposed on the substrate adjacent to the first amplifying transistor and the second amplifying transistor, and the second output balun is disposed on the substrate adjacent to the third amplifying transistor and the fourth amplifying transistor.
Optionally, the first output balun disposed on the substrate at least partially overlaps with a projection of the control chip group in the longitudinal direction, and the second output balun disposed on the substrate at least partially overlaps with a projection of the control chip group in the longitudinal direction.
The invention also provides a radio frequency front-end module which comprises the push-pull power amplification system.
The push-pull power amplification system comprises a substrate; an input conversion circuit configured to convert an input radio frequency signal into a first differential signal and a second differential signal; a first chip arranged on a substrate, wherein the first chip comprises a first power amplifier and is configured to receive the first differential signal and amplify and output the first differential signal; a second chip disposed on the substrate, the second chip including a second power amplifier configured to receive the second differential signal and amplify and output the second differential signal, the first chip and the second chip being disposed on the substrate in a relatively separated manner; an output conversion circuit configured to convert the amplified first differential signal and the amplified second differential signal into an output radio frequency signal. According to the invention, the first power amplifier and the second power amplifier are respectively arranged on different chips, so that the first power amplifier and the second power amplifier are physically isolated, the phenomenon that the first power amplifier and the second power amplifier are heated up and heated up due to mutual influence caused by heating in the working process is avoided, the heat dissipation performance of the push-pull power amplification system is improved, the performance of the push-pull power amplification system is finally ensured, and the power loss is reduced.
Drawings
Fig. 1 is a schematic structural diagram of a push-pull power amplification system according to a first embodiment of the present invention;
fig. 2 is a schematic structural diagram of a push-pull power amplifying system according to a second embodiment of the present invention;
fig. 3 is a schematic structural diagram of a push-pull power amplifying system according to a third embodiment of the present invention;
fig. 4 is a schematic structural diagram of a push-pull power amplifying system according to a fourth embodiment of the present invention;
fig. 5 is a schematic structural diagram of a push-pull power amplifying system according to a fifth embodiment of the present invention;
fig. 6 is a schematic structural diagram of a push-pull power amplifying system according to a sixth embodiment of the present invention;
fig. 7 is a schematic structural diagram of a push-pull power amplifying system according to a seventh embodiment of the present invention;
fig. 8 is a schematic structural diagram of a push-pull power amplifying system according to an eighth embodiment of the present invention.
The reference numerals in the specification are as follows:
1. an input conversion circuit; 11. a first input balun; 12. a second input balun; 2. a first chip; 21. a first power amplifier; 211. a first amplifying transistor; 212. a third amplifying transistor; 3. a second chip; 31. a second power amplifier; 311. a second amplifying transistor; 312. a fourth amplifying transistor; 4. an output conversion circuit; 41. a first output balun; 42. a second output balun; 5. a first control chip; 6. a control chipset; 7. a substrate; s1, a first main-level control switch; s2, a second main-level control switch; s3, a first secondary control switch; and S4, controlling the switch by the second secondary stage.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, an embodiment of the present invention provides a push-pull power amplification system, which includes a substrate 7, an input conversion circuit 1, a first chip 2, a second chip 3, and an output conversion circuit 4, and understandably, the substrate 7 may be a PCB printed board, the input conversion circuit 1, the first chip 2, the second chip 3, and the output conversion circuit 4 are disposed on the substrate 7, the input conversion circuit 1 is electrically connected to an input terminal of a first power amplifier 21 in the first chip 2 and an input terminal of a second power amplifier 31 in the second chip 3, respectively, and an output terminal of the first power amplifier 21 and an output terminal of the second power amplifier 31 are electrically connected to the output conversion circuit 4.
The input conversion circuit 1 is configured to convert an input radio frequency signal into a first differential signal and a second differential signal. Understandably, the input conversion circuit 1 is configured to receive the input radio frequency signal and perform a first conversion on the radio frequency signal, where a process of the first conversion may be set according to a design requirement of a circuit, for example, a process of the first conversion is to convert a single-ended radio frequency input signal into the first differential signal and the second differential signal through an input balun and output the first differential signal and the second differential signal, and the input radio frequency signal is a radio frequency signal of any frequency band to be amplified, such as a radio frequency signal of an N77 frequency band, a radio frequency signal of an N79 frequency band, and so on.
It should be noted that the input conversion circuit 1 may include one or more input baluns, and for the input radio frequency signals of different frequency bands, only one input balun may be used for conversion, or a plurality of input baluns may be used for respectively converting the radio frequency signals of different frequency bands.
The first chip 2 is disposed on the substrate 7, the first chip 2 includes a first power amplifier 21 configured to receive the first differential signal and amplify and output the first differential signal, understandably, the first chip 2 belongs to a semiconductor chip and is disposed on the substrate 7, the first chip 2 includes the first power amplifier 21, that is, the first power amplifier 21 is integrated with the first chip, and the first power amplifier 21 is configured to receive the first differential signal, amplify the first differential signal, and output the amplified first differential signal.
The second chip 3 is disposed on a substrate 7, the second chip 3 includes a second power amplifier 31 configured to receive the second differential signal and amplify and output the second differential signal, the first chip 2 and the second chip 3 are disposed on the substrate 7 in a relatively separated manner, understandably, the second chip 3 belongs to a semiconductor chip and is disposed on the substrate 7, the second chip 3 includes the second power amplifier circuit, i.e., the second power amplifier 31 is integrated therein, the second power amplifier 31 is configured to receive the second differential signal, amplify it and output the amplified second differential signal, wherein the first chip 2 and the second chip 3 are disposed on the substrate 7 in different positions relatively separated from each other, i.e., there is physical space isolation between the second chip 2 and the second chip 3 on the substrate 7, therefore, through the arrangement of relative separation, the first chip 2 and the second chip 3 can be isolated from each other in heat dissipation, and the phenomenon of heating up and aggravating in the working process due to mutual influence caused by heat generation of the first power amplifier 21 and the second power amplifier 31 can be avoided, so that effective heat dissipation is ensured, and the heat dissipation performance of the push-pull power amplification system is improved. Wherein the first power amplifier 21 and the second power amplifier 21 may be composed of one or more power amplifying transistors.
The output conversion circuit 4 is configured to convert the amplified first differential signal and the amplified second differential signal into an output radio frequency signal, and understandably, the output conversion circuit 4 performs a second conversion on the received amplified first differential signal and the amplified second differential signal, and finally outputs the output radio frequency signal. The second conversion process may be set according to a design requirement of the circuit, for example, the second conversion process is an output balun conversion process, and the second conversion process may also be an inverse process of the first conversion (input balun conversion), that is, the first differential circuit signal amplified by the first power amplifier and the second differential signal amplified by the second power amplifier are converted and then the output radio frequency signal is output, where the output radio frequency signal is a radio frequency signal obtained by differentially amplifying the input radio frequency signal.
It should be noted that the output conversion circuit 4 may include one or more output baluns, and for the first differential circuit signal and the second differential signal in different frequency bands, only one output balun may be used for conversion, or a plurality of input baluns may be used for respectively converting the first differential circuit signal and the second differential signal in different frequency bands.
Thus, the push-pull power amplification system of the present invention includes a substrate 7; an input conversion circuit 1 configured to convert an input radio frequency signal into a first differential signal and a second differential signal; the first chip 2 is arranged on the substrate 7, and the first chip 2 comprises a first power amplifier 21 configured to receive the first differential signal and amplify and output the first differential signal; a second chip 3 disposed on the substrate 7, wherein the second chip 3 includes a second power amplifier 31 configured to receive the second differential signal and amplify and output the second differential signal, and the first chip 2 and the second chip 3 are disposed on the substrate 7 in a relatively separated manner; an output conversion circuit 4 configured to convert the amplified first differential signal and the amplified second differential signal into an output radio frequency signal. Therefore, the invention realizes that the first power amplifier 21 and the second power amplifier 31 are respectively arranged on different chips, thereby physically isolating the first power amplifier 21 and the second power amplifier 31, improving the heat radiation performance of the push-pull power amplification system, finally ensuring the performance of the push-pull power amplification system and reducing the power consumption loss.
In an embodiment, as shown in fig. 2 and 3, the input conversion circuit 1 includes a first input balun 11, the output conversion circuit 4 includes a first output balun 41, the first power amplifier 21 includes a first amplifying transistor 211, and the second power amplifier 31 includes a second amplifying transistor 311, wherein the first input balun 11 is electrically connected to the first amplifying transistor 211 and the second amplifying transistor 311, and the first output balun 41 is electrically connected to the first amplifying transistor 211 and the second amplifying transistor 311.
The first input balun 11 comprises a plurality of first input terminals, a first input terminal of the first input balun 11 is configured to receive the input radio frequency signal, a second input terminal of the first input balun 11 is connected to a ground terminal or a power terminal, the first input balun 11 comprises a plurality of first output terminals, the first output terminal of the first input balun 11 is connected to the input terminal of the first amplifying transistor 211, the output terminal of the first amplifying transistor 211 is connected to the first input terminal of the output balun, the second output terminal of the first input balun 11 is connected to the input terminal of the second amplifying transistor 311, and the output terminal of the second amplifying transistor 311 is connected to the second input terminal of the first output balun 41.
Understandably, the first input balun 11 is for converting the unbalanced input radio frequency signal into a two-terminal differential signal for long-distance transmission, the first input balun 11 includes a first input terminal, a second input terminal, a first output terminal and a second output terminal, the first input terminal of the first input balun 11 is used for receiving the input radio frequency signal, the second input terminal of the first input balun 11 is connected to a ground terminal or a power supply terminal, wherein the power supply terminal can select a voltage source or a current source provided by connection according to circuit requirements, such as a voltage with a voltage source of +5V or +12V, and the like, wherein the first output balun 41 includes a plurality of first input terminals, a second input terminal, a plurality of first output terminals and a second output terminal.
The first input balun comprises a primary coil and a secondary coil, the primary coil is provided with a plurality of primary input endpoints arranged at different positions, each primary output end corresponds to and is connected with the output end of a primary control switch, the input ends of the primary control switches are respectively connected with the first input ends, the secondary coil is provided with a plurality of secondary output endpoints arranged at different positions, each secondary output end corresponds to and is connected with the input end of a secondary control switch, and the output ends of the secondary control switches are respectively connected with the first output ends
Understandably, the primary coil and the secondary coil in the first input balun 11 are spiral coils formed by winding wires of metal layers, different parts of the primary coil are provided with the primary input end point and the primary control switch, wherein the selection of the primary input end point at the part of the primary coil can be set according to different frequency bands, that is, a radio frequency signal of one frequency band corresponds to the part of one primary coil, each primary input end point corresponds to and is connected with an output end of one primary control switch, that is, each primary input end point controls on and off states through the primary control switch corresponding to each primary input end point, different parts of the secondary coil are provided with an output end point and a control switch, wherein the selection of the secondary output end point at the part of the secondary coil can be set according to different frequency bands, that is, a radio frequency signal of one frequency band corresponds to a position of one secondary coil, each secondary output end point is correspondingly connected with an input end of one secondary control switch, that is, each secondary output end point controls on and off states through the secondary control switch corresponding to the secondary output end point, input ends of the plurality of primary control switches are respectively connected with the plurality of first input ends of the input balun, and output ends of the plurality of secondary control switches are connected with the plurality of first output ends of the input balun. The primary control switch and the secondary control switch are turned on or off according to the control signal, so that the input radio frequency signals of different frequency bands are adapted.
Understandably, there is a one-to-one mapping correspondence between the control signal and the frequency band to which the input rf signal belongs, that is, the control signal can distinguish which frequency band of the rf signal the input rf signal is suitable for, for example: the input radio frequency signal is a radio frequency signal of an N77 frequency band, the control signal is a signal which corresponds to an N77 frequency band and controls the main control switch and the secondary control switch, the main control switch and the secondary control switch which correspond to an N77 frequency band can be controlled to be opened through the control signal, all the rest main control switches and the rest secondary control switches are closed, further, the input radio frequency signal can be processed through input balun conversion which corresponds to the N77 frequency band and the main coil, the input radio frequency signal can be processed through input balun conversion which corresponds to the N77 frequency band and the secondary coil, and the purpose that the main control switch and the secondary control switch at different parts are switched through different radio frequency signals and corresponding input balun conversion is carried out is achieved.
Wherein the input radio frequency signal outputs the first differential signal and the second differential signal under the combined action of the primary coil and the secondary coil of the first input balun 11. Therefore, according to the invention, the first input balun 11 comprises the primary coil and the secondary coil, the primary control switch of the primary coil and the secondary control switch of the secondary coil at different parts can be switched for different radio-frequency signals, the input balun conversion corresponding to the input radio-frequency signals is carried out, so that the first differential signal and the second differential signal are obtained, the switching of the primary control switch corresponding to the primary coil and the secondary control switch corresponding to the secondary coil according to the control signals is realized, the function of automatically matching the input radio-frequency signals by the first input balun 11 is completed, the switching of the frequency band diversity of the input radio-frequency signals is met, the conversion requirement of multiple frequency bands can be realized without expanding the capacity of the substrate 7, the space of the substrate 7 is saved, the cost is reduced, and the flexible variability of the first input balun 11 is realized.
In one embodiment, as shown in fig. 3, the first input balun includes two first input terminals and two first output terminals, the primary winding includes a first primary input terminal and a correspondingly connected first primary control switch S1, a second primary input terminal and a correspondingly connected second primary control switch S2, and the secondary winding includes a first secondary output terminal and a correspondingly connected first secondary control switch S3, a second secondary output terminal and a correspondingly connected second secondary control switch S4.
The input end of the first main-level control switch is connected with one first output end, the output end of the first main-level control switch is connected with the first main-level input end point, the input end of the second main-level control switch is connected with the other first input end, and the output end of the second main-level control switch is connected with the second main-level input end point; the input end of the first secondary control switch is connected with the first secondary output end point, the output end of the first secondary control switch is connected with one first output end, the input end of the second secondary control switch is connected with the second secondary output end point, and the output end of the second secondary control switch is connected with the other first output end; when the first input balun is configured to receive a first input radio frequency signal, the first primary control switch and the first secondary control switch are closed, and the second primary control switch and the second secondary control switch are open; when the first input balun is configured to receive a second input radio frequency signal, the second primary control switch and the second secondary control switch are closed, and the first primary control switch and the first secondary control switch are open.
Understandably, the primary coil and the secondary coil are spiral coils formed by winding wires of metal layers, the primary coil includes a first primary input end point and a first primary control switch correspondingly connected to the first primary input end point, and a second primary input end point and a second primary control switch correspondingly connected to the second primary input end point, an input end of the first primary control switch is connected to one of the first input ends of the input balun, and an input end of the second primary control switch is connected to the other first input end of the input balun. The secondary coil comprises a first secondary output end point, a first secondary control switch and a second secondary control switch, wherein the first secondary control switch is correspondingly connected with the first secondary output end point, the second secondary control switch is correspondingly connected with the second secondary output end point, the input end of the first secondary control switch is connected with the first secondary output end point, the output end of the first secondary control switch is connected with the first output end, the input end of the second secondary control switch is connected with the second secondary output end point, and the output end of the second secondary control switch is connected with the other first output end.
When the first input balun 11 is configured to receive a first input radio frequency signal, the first primary control switch and the first secondary control switch are closed, and the second primary control switch and the second secondary control switch are open.
Understandably, the input rf signal includes a first input rf signal and a second input rf signal, and the frequency bands of the first input rf signal and the input rf signal are different, for example: the first input radio frequency signal may be an input radio frequency signal in an N77 frequency band, the second input radio frequency signal may be an input radio frequency signal in an N79 frequency band, and when the first input balun 11 is configured to receive the first input radio frequency signal, the control chip sends out a control signal to control the first primary control switch and the first secondary control switch in the first input balun 11 to be closed, and the second primary control switch and the second secondary control switch to be opened, so as to lead the first secondary output end to be connected with the first output end of the first input balun 11. For example: the first main-stage input endpoint and the first secondary output endpoint correspond to input balun conversion of an N77 frequency band, a control chip sends out control signals to control the first main-stage control switch and the first secondary control switch to be closed, the second main-stage control switch and the second secondary control switch to be opened, and converted first differential signals and second differential signals are output through a first output end and a second output end of the input balun.
When the first input balun 11 is configured to receive a second input radio frequency signal, the second primary control switch and the second secondary control switch are closed, and the first primary control switch and the first secondary control switch are open.
Understandably, when the first input balun 11 is configured to receive a second input radio frequency signal, a control chip sends out a control signal to control the second primary control switch and the second secondary control switch in the first input balun 11 to be closed, and the first primary control switch and the first secondary control switch to be opened, so as to lead out the second secondary output terminal to be connected with the first output terminal of the first input balun 11, so as to output the first differential signal and the second differential signal from both the first output terminal and the second output terminal, for example: the second main-stage input endpoint and the second secondary output endpoint correspond to input balun conversion of an N79 frequency band, a control chip sends out control signals to control the second main-stage control switch and the second secondary control switch to be closed, the first main-stage control switch and the first secondary control switch to be disconnected, and converted first differential signals and second differential signals are output through a first output end and a second output end of the input balun.
In this embodiment, the first primary control switch, the second primary control switch, the first secondary control switch, and the second secondary control switch are determined to be turned off or turned on according to the frequency band of the radio frequency input signal, if the frequency band of the radio frequency input signal is large (for example, the N79 frequency band), the second primary control switch and the second secondary control switch are turned on, and the first primary control switch and the first secondary control switch are turned off, so that the length of an inductance line connected to the primary coil and the secondary coil of the first input balun is short. If the frequency band of the radio frequency input signal is smaller (for example, N77 frequency band), the first main control switch and the first secondary control switch are closed, and the second main control switch and the second secondary control switch are turned off, so that the length of an inductance wire connected to a main coil and a secondary coil of the first input balun is longer; therefore, the radio frequency input signals of different frequency bands can be adapted by adopting one first input balun.
As such, the present invention provides that when the first input balun 11 is configured to receive a first input radio frequency signal, the first primary control switch and the first secondary control switch are closed, and the second primary control switch and the second secondary control switch are open; when the first input balun 11 is configured to receive a second input radio frequency signal, the second primary control switch and the second secondary control switch are closed, the first primary control switch and the first secondary control switch are disconnected, realizing that according to the configured first input radio frequency signal or the second input radio frequency signal, and the on or off condition of the first main control switch, the first secondary control switch, the second main control switch and the second secondary control switch in the main coil and the secondary coil under the control of the control chip, the method realizes corresponding conversion output according to input radio frequency signals of different frequency bands, meets the switching of frequency band diversity of the input radio frequency signals, can meet the conversion requirement of multiple frequency bands without expanding the capacity of the substrate 7, saves the space of the substrate 7, reduces the cost, and realizes the flexible variability of the first input balun 11.
In an embodiment, as shown in fig. 4, the input conversion circuit 1 includes a first input balun 11 and a second input balun 12, the output conversion circuit 4 further includes a first output balun 41 and a second output balun 42, the first power amplifier 21 includes a first amplifying transistor 211 and a third amplifying transistor 212, and the second power amplifier 31 includes a second amplifying transistor 311 and a fourth amplifying transistor 312.
Understandably, the first power amplifier 21 includes electronic components of the first amplifying transistor 211 and the third amplifying transistor 212, the first amplifying transistor 211 and the third amplifying transistor 212 are amplifying transistors corresponding to different frequency bands, and can be set according to circuit requirements, for example, the first amplifying transistor 211 is an amplifying transistor suitable for the N79 frequency band, the third amplifying transistor 212 is an amplifying transistor suitable for the N77 frequency band, the second power amplifier 31 includes electronic components of the second amplifying transistor 311 and the fourth amplifying transistor 312, the second amplifying transistor 311 and the fourth amplifying transistor 312 are amplifying transistors corresponding to different frequency bands, and can be set according to circuit requirements, for example, the second amplifying transistor 311 is an amplifying transistor suitable for the N79 frequency band, the fourth amplifying transistor 312 is an amplifying transistor suitable for the N77 frequency band, that is, the first amplifying transistor 211 corresponds to the second amplifying transistor 311, and the third amplifying transistor 212 corresponds to the fourth amplifying transistor 312.
A first input terminal of the first input balun 11 is configured to receive a first input radio frequency signal, a second input terminal is connected to a ground terminal or a power supply terminal, a first output terminal of the first input balun 11 is connected to an input terminal of the first amplifying transistor 211, an output terminal of the first amplifying transistor 211 is connected to a first input terminal of the first output balun 41, a second output terminal of the first input balun 11 is connected to an input terminal of the second amplifying transistor 311, and an output terminal of the second amplifying transistor 311 is connected to a second input terminal of the first output balun 41.
The first input terminal of the second input balun 12 is configured to receive a second input radio frequency signal, the second input terminal is connected to a ground terminal or a power supply terminal, the first output terminal of the second input balun 12 is connected to the input terminal of the third amplifying transistor 212, the output terminal of the third amplifying transistor 212 is connected to the first input terminal of the second output balun 42, the second output terminal of the second input balun 12 is connected to the input terminal of the fourth amplifying transistor 312, and the output terminal of the fourth amplifying transistor 312 is connected to the second input terminal of the second output balun 42.
Understandably, the input rf signal includes a first input rf signal and a second input rf signal, and the frequency bands of the first input rf signal and the second input rf signal are different, for example: the first input rf signal may be an input rf signal in a N79 frequency band, the second input rf signal may be an input rf signal in an N77 frequency band, the first rf signal is converted by the first input balun 11, then input to the input end of the first amplifying transistor 211 through the first output end of the first input balun 11, after being amplified by the first amplifying transistor 211, output and transmitted to the first input end of the first output balun 41 through the output end of the first amplifying transistor 211, at the same time, input to the input end of the second amplifying transistor 311 through the second output end of the first input balun 11, and after being amplified by the second amplifying transistor 311, output and transmitted to the second input end of the first output balun 41 through the output end of the second amplifying transistor 311; the second radio frequency signal is converted by the second input balun 12, then input to the input end of the third amplifying transistor 212 through the first output end of the second input balun 12, amplified by the third amplifying transistor 212, output and transmitted to the first input end of the second output balun 42 through the output end of the third amplifying transistor 212, input to the input end of the fourth amplifying transistor 312 through the second output end of the second input balun 12, amplified by the fourth amplifying transistor 312, and output and transmitted to the second input end of the second output balun 42 through the output end of the fourth amplifying transistor 312.
In this way, the present invention is configured such that the first input terminal of the first input balun 11 is configured to receive a first input radio frequency signal, the second input terminal is connected to a ground terminal or a power terminal, the first output terminal of the first input balun 11 is connected to the input terminal of the first amplifying transistor 211, the output terminal of the first amplifying transistor 211 is connected to the first input terminal of the first output balun 41, the second output terminal of the first input balun 11 is connected to the input terminal of the second amplifying transistor 311, and the output terminal of the second amplifying transistor 311 is connected to the second input terminal of the first output balun 41; the first input end of the second input balun 12 is configured to receive a second input radio frequency signal, the second input end is connected to a ground terminal or a power supply terminal, the first output end of the second input balun 12 is connected to the input end of the third amplifying transistor 212, the output end of the third amplifying transistor 212 is connected to the first input end of the second output balun 42, the second output end of the second input balun 12 is connected to the input end of the fourth amplifying transistor 312, and the output end of the fourth amplifying transistor 312 is connected to the second input end of the second output balun 42, so that the corresponding amplifying transistors of different frequency bands are selected to perform amplification processing according to the configured first input radio frequency signal or second input radio frequency signal, and accordingly, the corresponding amplified radio frequency signal is output. The first power amplifier 21 and the second power amplifier can adopt corresponding different power amplifying transistors to perform corresponding amplifying output according to input radio frequency signals of different frequency bands, so that the switching of the frequency band diversity of the input radio frequency signals is met, the multi-band amplifying requirement can be achieved without enlarging the capacity of the substrate 7, the space of the substrate 7 is saved, the cost is reduced, and the flexibility and the variability of the first power amplifier 21 and the second power amplifier 31 are realized. And because the input radio frequency signals of different frequency bands are converted and amplified by adopting different input baluns, different amplifying transistors and different output baluns, the push-pull power amplification system in the embodiment can realize the conversion and amplification of the input radio frequency signals of different frequency bands at the same time, and improves the working efficiency of the push-pull power amplification system.
In an embodiment, as shown in fig. 5, the push-pull power amplifying system further includes a first control chip 5 disposed on a substrate 7, where the first control chip 5 is disposed between the first chip 2 and the second chip 3 of the substrate 7, and the first control chip is configured to control the plurality of primary control switches and the plurality of secondary control switches in the first input balun to be turned on or off. Specifically, the first control chip 5 is configured to be used as a control chip for controlling the input conversion circuit 1 to adapt to the input radio frequency signals in different frequency bands, and the first input balun 11 in the input conversion circuit 1 is controlled by a control signal sent by the first control chip 5 to switch different primary control switches and different secondary control switches according to the input radio frequency signals in different frequency bands, so as to control the input conversion circuit 1 to switch according to the input radio frequency signals in different frequency bands.
Further, the first control chip 5 is connected to a first bias port on the first chip 2 and a second bias port on the second chip 3, respectively. Understandably, the first control chip 5 may be set according to circuit requirements, the first control chip provides corresponding bias current or/and bias voltage for respectively controlling a bias circuit corresponding to the first amplifying transistor 211 of the first chip 2 and a bias circuit corresponding to the second amplifying transistor 311 of the second chip 3 according to input radio frequency signals of different frequency bands, the first bias port is a port of the first control chip 5 connected to the bias circuit in the first chip 2 through a pin wire, the second bias port is a port of the control chip connected to the bias circuit in the second chip 3 through a pin wire, for example, the first control chip 5 may include a plurality of CMOS transistors, and the bias circuit corresponding to the first amplifying transistor 211 of the first chip 2 and the bias circuit corresponding to the second amplifying transistor 311 of the second chip 3 are controlled by on-off states of the CMOS transistors The circuit provides corresponding bias current or/and bias voltage, and meets the switching requirements of the first chip 2 and the second chip 3 for input radio frequency signals of different frequency bands.
In an embodiment, as shown in fig. 6, the push-pull power amplification system further includes a control chip set 6 disposed on a substrate 7, the control chip set 6 is disposed between the first chip 2 and the second chip 3 of the substrate, the control chip set 6 includes a first sub-control chip and a second sub-control chip, the first sub-control chip is configured to control bias signals of the first amplification transistor and the second amplification transistor, and the second sub-control chip is configured to control bias signals of the third amplification transistor and the fourth amplification transistor. Specifically, the first sub-control chip is respectively connected to a first bias port on the first chip 2 and a second bias port on the second chip 3, and the second sub-control chip is respectively connected to a third bias port on the first chip 2 and a fourth bias port on the second chip 3, and understandably, the control chip set 6 can be set according to circuit requirements. In this embodiment, when the first power amplifier includes a first amplifying transistor and a third amplifying transistor, and the second power amplifier includes a second amplifying transistor and a fourth amplifying transistor, the first sub-control chip is a bias circuit that controls the first amplifying transistor 211 of the first chip 2 and the bias circuit that controls the second amplifying transistor 311 of the second chip 3 according to the input radio frequency signals of different frequency bands. The second sub-control chip is a bias circuit that controls the third amplifying transistor 212 of the first chip 2 and the fourth amplifying transistor 312 of the second chip 3 according to the input rf signals of different frequency bands. The third bias port is a port where a control chip is connected to the bias circuit in the first chip 2 through a pin wire, and the fourth bias port is a port where the control chip is connected to the bias circuit in the second chip 3 through a pin wire, for example, the first sub-control chip and the second sub-control chip may include a plurality of CMOS transistors, and the bias circuit in the first chip 2 and the bias circuit in the second chip 3 are controlled by the on-off states of the CMOS transistors to provide corresponding bias current or/and bias voltage, so that switching of the bias circuits of the first chip 2 and the second chip 3 is completed, and switching requirements of the first chip 2 and the second chip 3 for input radio frequency signals of different frequency bands are met. Meanwhile, the control chip set 6 may also be used as a control chip for controlling the input conversion circuit 1 to adapt to the input radio frequency signals of different frequency bands, and the control chip set 6 sends a control signal to control the switching of the first input balun 11 and the second input balun 12 in the input conversion circuit 1, so as to switch different input baluns for the input radio frequency signals of different frequency bands, thereby playing a role in controlling the input conversion circuit 1 to switch different input baluns for the input radio frequency signals of different frequency bands.
In this embodiment, the control chip group 6 may include only one sub-control chip, that is, only one control chip may be used to control the amplifying transistors in different frequency bands, that is, a plurality of different pins are arranged in one control chip and are led out to the bias circuits corresponding to the amplifying transistors in different frequency bands through different pin lines; the control chip group 6 may include a plurality of sub-control chips, that is, a plurality of control chips may be respectively used to control the amplifying transistors in different frequency bands, that is, one control chip controls the amplifying transistor in one frequency band. The push-pull power amplification system can be reduced by adopting one control chip to control the amplification transistors of different frequency bands. The control of the amplifying transistors of different frequency bands is realized by adopting a plurality of control chips, so that the phenomenon of signal interference in the working process of simultaneously amplifying the amplifying transistors of different frequency bands can be avoided.
In one embodiment, as shown in fig. 7, the third amplifying transistor 212 is disposed on a side of the first amplifying transistor 211 away from the control chip set 6, the fourth amplifying transistor 312 is disposed on a side of the second amplifying transistor 311 away from the control chip set 6, and both the first amplifying transistor 311 and the second amplifying transistor 311 are adjacent to the control chip set 6. The first amplifying transistor and the second amplifying transistor are configured to amplify a first input radio frequency signal, and the third amplifying transistor and the fourth amplifying transistor are configured to amplify a second input radio frequency signal, wherein a frequency band of the first input radio frequency signal is greater than a frequency band of the second input radio frequency signal.
Understandably, the first amplification transistor 211 and the third amplification transistor 212 are provided on the first chip 2, and the second amplification transistor 311 and the fourth amplification transistor 312 are provided on the second chip 3. Preferably, the first amplifying transistor 211 and the second amplifying transistor 311 are amplifying transistors for the N79 band, the third amplifying transistor 212 and the fourth amplifying transistor 312 are amplifying transistors for the N77 band, the first input balun 41 is disposed at a position adjacent to both the first amplifying transistor 211 and the second amplifying transistor 311, the second input balun 42 is disposed at a position adjacent to both the third amplifying transistor 212 and the fourth amplifying transistor 312, and the heat between the first chip 2 and the second chip 3 can be spatially separated by disposing the first amplifying transistor 211 and the second amplifying transistor 311 in the first chip 2 and the third amplifying transistor 212 and the fourth amplifying transistor 312 in the second chip 3 in physical spatial separation, the heat dissipation is convenient, the situation that the heat accumulation is reversed to intensify the temperature rise is avoided, the signal transmission on a circuit is not influenced, the heat dissipation performance of the push-pull power amplification system is improved, and finally the performance of the push-pull power amplification system is ensured and the power loss is reduced.
In an embodiment, the first output balun 41 disposed on the substrate 7 at least partially overlaps a projection of the first control chip 5 in the longitudinal direction, and the second output balun 42 disposed on the substrate 7 at least partially overlaps a projection of the first control chip 5 in the longitudinal direction.
Understandably, the first output balun 41 and the second control chip 6 are disposed on different layers of a substrate, the first output balun 41 and the first control chip 5 have at least partially overlapped component parts in the longitudinal projection, the second output balun 42 and the first control chip 5 are disposed on different layers of the substrate, and the second output balun 42 and the second control chip 6 have at least partially overlapped component parts in the longitudinal projection, so that the routing of the first control chip 5 and the first output balun 41 on the substrate 7 is more convenient and optimal, the first control chip 5 is convenient to transmit signals to the first output balun 41, the second control chip 6 and the second output balun 42 on the substrate 7 is more convenient and optimal, the routing of the second control chip 6 is convenient to transmit signals to the second output balun 42, therefore, the first output balun 41 and the second output balun 42 are switched more quickly and accurately, the output performance of the push-pull power amplification system is improved, and the wiring paths of the substrate can be reduced, so that the area of the substrate is reduced, the cost of the substrate is saved, and the processing cost is reduced.
In one embodiment, as shown in fig. 8, the first input balun 11 disposed on the substrate 7 is disposed adjacent to the first amplifying transistor 211 and the second amplifying transistor 311; the second input balun 12 disposed on the substrate 7 is disposed adjacent to the third amplifying transistor 212 and the fourth amplifying transistor 312. The first output balun 41 disposed on the substrate 7 is disposed adjacent to the first amplifying transistor 211 and the second amplifying transistor 311, and the second output balun 42 disposed on the substrate 7 is disposed adjacent to the third amplifying transistor 212 and the fourth amplifying transistor 312, so that the routing of the signals output by the first amplifying transistor 211 and the second amplifying transistor 311 to the first output balun 41 is more convenient and performance-optimized, the signals of the first amplifying transistor 211 or/and the second amplifying transistor 311 are transmitted to the first output balun 41 with the lowest loss, the routing of the signals output by the third amplifying transistor 212 and the fourth amplifying transistor 312 to the second output balun 42 is more convenient and performance-optimized, and the signals of the third amplifying transistor 212 or/and the fourth amplifying transistor 312 are transmitted to the second output balun 42 with the lowest loss, therefore, the output of the first output balun 41 and the second output balun 42 is faster and more accurate, and the output performance of the push-pull power amplification system is improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A push-pull power amplification system, comprising:
a substrate;
an input conversion circuit configured to convert an input radio frequency signal into a first differential signal and a second differential signal;
a first chip arranged on a substrate, wherein the first chip comprises a first power amplifier and is configured to receive the first differential signal and amplify and output the first differential signal;
a second chip disposed on the substrate, the second chip including a second power amplifier configured to receive the second differential signal and amplify and output the second differential signal, the first chip and the second chip being disposed on the substrate in a relatively separated manner;
an output conversion circuit configured to convert the amplified first differential signal and the amplified second differential signal into an output radio frequency signal.
2. The push-pull power amplification system of claim 1, wherein the input conversion circuit comprises a first input balun, the output conversion circuit comprises a first output balun, the first power amplifier comprises a first amplifying transistor, and the second power amplifier comprises a second amplifying transistor;
the first input balun comprises a plurality of first input terminals, the first input terminals of the first input balun are configured to receive the input radio frequency signal, and the second input terminals are connected with a ground terminal or a power terminal;
the first input balun comprises a plurality of first output ends, the first output end of the first input balun is connected with the input end of the first amplifying transistor, the output end of the first amplifying transistor is connected with the first input end of the output balun, the second output end of the first input balun is connected with the input end of the second amplifying transistor, and the output end of the second amplifying transistor is connected with the second input end of the first output balun;
the first input balun comprises a primary coil and a secondary coil, the primary coil is provided with a plurality of primary input end points arranged at different positions, each primary output end point is correspondingly connected with an output end of a primary control switch, the input ends of the primary control switches are respectively connected with the first input ends, the secondary coil is provided with a plurality of secondary output end points arranged at different positions, each secondary output end point is correspondingly connected with an input end of a secondary control switch, and the output ends of the secondary control switches are respectively connected with the first output ends;
the primary control switch and the secondary control switch are turned on or off according to the control signal, so that the input radio frequency signals of different frequency bands are adapted.
3. The push-pull power amplification system of claim 2, wherein the first input balun includes two first input terminals and two first output terminals, the primary coil includes a first primary input terminal and a correspondingly connected first primary control switch, a second primary input terminal and a correspondingly connected second primary control switch, and the secondary coil includes a first secondary output terminal and a correspondingly connected first secondary control switch, a second secondary output terminal and a correspondingly connected second secondary control switch;
the input end of the first main-level control switch is connected with one first output end, the output end of the first main-level control switch is connected with the first main-level input end point, the input end of the second main-level control switch is connected with the other first input end, and the output end of the second main-level control switch is connected with the second main-level input end point;
the input end of the first secondary control switch is connected with the first secondary output end point, the output end of the first secondary control switch is connected with one first output end, the input end of the second secondary control switch is connected with the second secondary output end point, and the output end of the second secondary control switch is connected with the other first output end;
when the first input balun is configured to receive a first input radio frequency signal, the first primary control switch and the first secondary control switch are closed, and the second primary control switch and the second secondary control switch are open;
when the first input balun is configured to receive a second input radio frequency signal, the second primary control switch and the second secondary control switch are closed, and the first primary control switch and the first secondary control switch are open.
4. The push-pull power amplification system of claim 1, wherein the input conversion circuit comprises a first input balun and a second input balun, the output conversion circuit further comprises a first output balun and a second output balun, the first power amplifier comprises a first amplifying transistor and a third amplifying transistor, the second power amplifier comprises a second amplifying transistor and a fourth amplifying transistor;
a first input end of the first input balun is configured to receive a first input radio frequency signal, a second input end of the first input balun is connected with a ground end or a power supply end, a first output end of the first input balun is connected with an input end of the first amplifying transistor, an output end of the first amplifying transistor is connected with a first input end of the first output balun, a second output end of the first input balun is connected with an input end of the second amplifying transistor, and an output end of the second amplifying transistor is connected with a second input end of the first output balun;
the first input end of the second input balun is configured to receive a second input radio frequency signal, the second input end of the second input balun is connected to a ground end or a power supply end, the first output end of the second input balun is connected to the input end of the third amplifying transistor, the output end of the third amplifying transistor is connected to the first input end of the second output balun, the second output end of the second input balun is connected to the input end of the fourth amplifying transistor, and the output end of the fourth amplifying transistor is connected to the second input end of the second output balun.
5. The push-pull power amplification system of claim 2, further comprising a first control chip disposed on a substrate, the first control chip disposed between the first chip and the second chip of a substrate, the first control chip configured to control the plurality of primary control switches and the plurality of secondary control switches in the first input balun to open or close.
6. The push-pull power amplification system of claim 4, further comprising a control chip set disposed on a substrate, the control chip set disposed between the first chip and the second chip of the substrate, the control chip set including a first sub-control chip and a second sub-control chip, the first sub-control chip configured to control bias signals of the first amplification transistor and the second amplification transistor, the second sub-control chip configured to control bias signals of the third amplification transistor and the fourth amplification transistor.
7. The push-pull power amplification system of claim 6, wherein the third amplification transistor is disposed on a side of the first amplification transistor remote from the control chipset, the fourth amplification transistor is disposed on a side of the second amplification transistor remote from the control chipset, the first and second amplification transistors are both adjacent to the control chipset, the first and second amplification transistors are configured to amplify a first input radio frequency signal, the third and fourth amplification transistors are configured to amplify a second input radio frequency signal, wherein a frequency band of the first input radio frequency signal is greater than a frequency band of the second input radio frequency signal.
8. The push-pull power amplification system of claim 6, wherein the first input balun disposed on a substrate is disposed adjacent to the first amplification transistor and the second amplification transistor; the second input balun disposed on the substrate is disposed adjacent to the third amplifying transistor and the fourth amplifying transistor; the first output balun is disposed on the substrate adjacent to the first amplifying transistor and the second amplifying transistor, and the second output balun is disposed on the substrate adjacent to the third amplifying transistor and the fourth amplifying transistor.
9. The push-pull power amplification system of claim 6, wherein the first output balun disposed on the substrate at least partially overlaps a projection of the control chip set in the longitudinal direction, and the second output balun disposed on the substrate at least partially overlaps a projection of the control chip set in the longitudinal direction.
10. A radio frequency front end module comprising a push-pull power amplification system as claimed in claims 1-9.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110182311.4A CN112968679B (en) | 2021-02-08 | 2021-02-08 | Push-pull power amplification system and radio frequency front-end module |
| CN202311113563.7A CN117097278A (en) | 2021-02-08 | 2021-02-08 | Push-pull power amplification system and radio frequency front-end module |
| PCT/CN2022/073513 WO2022166652A1 (en) | 2021-02-08 | 2022-01-24 | Push-pull power amplification system and radio frequency front-end module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110182311.4A CN112968679B (en) | 2021-02-08 | 2021-02-08 | Push-pull power amplification system and radio frequency front-end module |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311113563.7A Division CN117097278A (en) | 2021-02-08 | 2021-02-08 | Push-pull power amplification system and radio frequency front-end module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112968679A true CN112968679A (en) | 2021-06-15 |
| CN112968679B CN112968679B (en) | 2023-09-19 |
Family
ID=76284727
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110182311.4A Active CN112968679B (en) | 2021-02-08 | 2021-02-08 | Push-pull power amplification system and radio frequency front-end module |
| CN202311113563.7A Pending CN117097278A (en) | 2021-02-08 | 2021-02-08 | Push-pull power amplification system and radio frequency front-end module |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311113563.7A Pending CN117097278A (en) | 2021-02-08 | 2021-02-08 | Push-pull power amplification system and radio frequency front-end module |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN112968679B (en) |
| WO (1) | WO2022166652A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113922762A (en) * | 2021-09-09 | 2022-01-11 | 锐石创芯（深圳）科技有限公司 | Push-pull power amplification circuit and push-pull power amplification chip |
| CN114189215A (en) * | 2021-10-29 | 2022-03-15 | 锐石创芯（深圳）科技有限公司 | Radio frequency power amplifying circuit and radio frequency front end module |
| CN114257181A (en) * | 2021-12-22 | 2022-03-29 | 锐石创芯(深圳)科技股份有限公司 | Radio frequency circuit, radio frequency front end module and push-pull power amplifier |
| WO2022166652A1 (en) * | 2021-02-08 | 2022-08-11 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplification system and radio frequency front-end module |
| CN115549617A (en) * | 2021-06-30 | 2022-12-30 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplifying circuit and radio frequency front end module |
| CN116846351A (en) * | 2022-03-23 | 2023-10-03 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplifying circuit |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN219999370U (en) * | 2022-12-30 | 2023-11-10 | 锐石创芯(深圳)科技股份有限公司 | Radio frequency module |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101714852A (en) * | 2009-09-22 | 2010-05-26 | 锐迪科微电子（上海）有限公司 | Double-frequency radio-frequency power amplifier circuit chip |
| CN105471397A (en) * | 2015-12-11 | 2016-04-06 | 锐迪科创微电子（北京）有限公司 | Double-frequency radio frequency power amplification module |
| CN107046408A (en) * | 2017-04-14 | 2017-08-15 | 上海华虹宏力半导体制造有限公司 | A kind of low cost radio frequency difference amplifier |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10336292A1 (en) * | 2003-08-01 | 2005-02-17 | Atmel Germany Gmbh | Transmitting and receiving device with at least two pairs of one each transmitting power amplifier and a low-noise input amplifier |
| JP4288529B2 (en) * | 2004-06-30 | 2009-07-01 | 日立金属株式会社 | High frequency components and multiband communication devices |
| US7129784B2 (en) * | 2004-10-28 | 2006-10-31 | Broadcom Corporation | Multilevel power amplifier architecture using multi-tap transformer |
| US7526256B2 (en) * | 2005-05-25 | 2009-04-28 | Broadcom Corporation | Transformer-based multi-band RF front-end architecture |
| CN107425873A (en) * | 2017-08-31 | 2017-12-01 | 锐石创芯（厦门）科技有限公司 | Radio frequency front-end device and the electronic equipment for including it |
| CN109462411A (en) * | 2018-11-26 | 2019-03-12 | 锐石创芯（深圳）科技有限公司 | RF Amplifier Module and communication terminal |
| CN109951165A (en) * | 2019-03-25 | 2019-06-28 | 广东宽普科技股份有限公司 | A kind of S-band signal power amplifying circuit |
| JP2020205550A (en) * | 2019-06-18 | 2020-12-24 | 株式会社村田製作所 | Semiconductor element and power amplifier device |
| CN211405977U (en) * | 2020-01-22 | 2020-09-01 | 深圳飞骧科技有限公司 | Radio frequency power amplifying device for 5G-NR frequency band |
| CN112187194B (en) * | 2020-09-30 | 2022-04-19 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplifier, radio frequency front-end circuit and wireless device |
| CN112968679B (en) * | 2021-02-08 | 2023-09-19 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplification system and radio frequency front-end module |
-
2021
- 2021-02-08 CN CN202110182311.4A patent/CN112968679B/en active Active
- 2021-02-08 CN CN202311113563.7A patent/CN117097278A/en active Pending
-
2022
- 2022-01-24 WO PCT/CN2022/073513 patent/WO2022166652A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101714852A (en) * | 2009-09-22 | 2010-05-26 | 锐迪科微电子（上海）有限公司 | Double-frequency radio-frequency power amplifier circuit chip |
| CN105471397A (en) * | 2015-12-11 | 2016-04-06 | 锐迪科创微电子（北京）有限公司 | Double-frequency radio frequency power amplification module |
| CN107046408A (en) * | 2017-04-14 | 2017-08-15 | 上海华虹宏力半导体制造有限公司 | A kind of low cost radio frequency difference amplifier |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022166652A1 (en) * | 2021-02-08 | 2022-08-11 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplification system and radio frequency front-end module |
| CN115549617A (en) * | 2021-06-30 | 2022-12-30 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplifying circuit and radio frequency front end module |
| WO2023273852A1 (en) * | 2021-06-30 | 2023-01-05 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplification circuit and radio frequency front end module |
| CN113922762A (en) * | 2021-09-09 | 2022-01-11 | 锐石创芯（深圳）科技有限公司 | Push-pull power amplification circuit and push-pull power amplification chip |
| CN114189215A (en) * | 2021-10-29 | 2022-03-15 | 锐石创芯（深圳）科技有限公司 | Radio frequency power amplifying circuit and radio frequency front end module |
| CN114257181A (en) * | 2021-12-22 | 2022-03-29 | 锐石创芯(深圳)科技股份有限公司 | Radio frequency circuit, radio frequency front end module and push-pull power amplifier |
| CN116846351A (en) * | 2022-03-23 | 2023-10-03 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplifying circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117097278A (en) | 2023-11-21 |
| CN112968679B (en) | 2023-09-19 |
| WO2022166652A1 (en) | 2022-08-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112968679B (en) | Push-pull power amplification system and radio frequency front-end module | |
| CN110932747B (en) | Integrated high-performance radio frequency transmit-receive switch | |
| CN102714084B (en) | There is the integrated transformer of multiple transformation ratio | |
| CN110311630A (en) | System and method for bypassing low-noise amplifier | |
| US10742189B2 (en) | Switched multi-coupler apparatus and modules and devices using same | |
| CN103368601B (en) | Wireless communication transceiver front end | |
| JP5900756B2 (en) | Power amplification module | |
| CN104733809A (en) | Switching Circuit And Semiconductor Module | |
| EP2433333B1 (en) | Circuits and methods combining signal power | |
| CN111742491A (en) | Switch circuit, high-frequency front-end circuit, and communication device | |
| CN107404294A (en) | A kind of output matching network circuit and amplifying circuit with directional coupler | |
| CN101908881B (en) | Directional coupler and radio-frequency power amplifier containing same | |
| CN111628759A (en) | Switch arrangement | |
| US8279010B2 (en) | Radio frequency power amplifier | |
| US8970318B2 (en) | Transforming circuit | |
| CN218124668U (en) | Radio frequency front end module | |
| US20230030709A1 (en) | Broadband low noise amplifier using multiple cascode stages | |
| US20220393654A1 (en) | Biasing solution for push-pull power amplifier for low loadline and high common mode rejection ratio background | |
| KR20110060735A (en) | Power amplifier for multi band operation with high frequency transformer | |
| EP4106210B1 (en) | Transceiver device, wireless communication device, and chip set | |
| CN210137321U (en) | Radio frequency front-end chip | |
| CN108447651B (en) | On-chip integrated variable turns ratio transformer | |
| JP6466872B2 (en) | Communication circuit | |
| CN105680801A (en) | Multimode power amplifier capable of dissipating heat in balance and application of multimode power amplifier | |
| US7548732B2 (en) | Power amplifier arrangement having two or more antenna coupling respective amplifiers to a supply potential |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 518000 room 2001, building 3, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen City, Guangdong Province Applicant after: Ruishi Chuangxin (Shenzhen) Technology Co.,Ltd. Address before: 518000 room 2001, building 3, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen City, Guangdong Province Applicant before: AN ADVANCED RF POWER AMPLIFIER AND COMMUNICATION DEVICE |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |