CN108447651B - On-chip integrated variable turns ratio transformer - Google Patents

On-chip integrated variable turns ratio transformer Download PDF

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CN108447651B
CN108447651B CN201810587935.2A CN201810587935A CN108447651B CN 108447651 B CN108447651 B CN 108447651B CN 201810587935 A CN201810587935 A CN 201810587935A CN 108447651 B CN108447651 B CN 108447651B
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transistor
switch unit
primary coil
coil unit
unit
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CN108447651A (en
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陈亮
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NANJING GUOBO ELECTRONICS CO Ltd
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NANJING GUOBO ELECTRONICS CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/40—Structural association with built-in electric component, e.g. fuse
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F38/00—Adaptations of transformers or inductances for specific applications or functions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

The invention relates to an on-chip integrated variable turns ratio transformer, which comprises two primary coil units, two switch units and a primary coil unit, wherein an A primary coil unit is connected with a radio frequency input port positive electrode and an A switch unit input port, an output port of the A switch unit is connected with a B switch unit and a B primary coil unit positive electrode, a B primary coil unit negative electrode is connected with a B switch unit, an input port of the B switch unit is connected with a radio frequency input port negative electrode, a secondary coil positive electrode and a secondary coil negative electrode are respectively connected with a radio frequency output port positive electrode and a radio frequency output port negative electrode, and the secondary coil unit outputs a radio frequency input signal through electromagnetic coupling; the transformer turns ratio is controlled by the a and B switching units. The advantages are that: 1) The transformer turns ratio can provide a variety of impedance changes, voltage transforms, and current transforms as needed to save device costs. 2) One design can be used for various applications, saving time and cost. 3) Low cost and wide application prospect and value.

Description

On-chip integrated variable turns ratio transformer
Technical Field
The invention relates to an on-chip integrated variable turns ratio transformer, belonging to the technical field of integrated circuits.
Background
In the radio frequency circuit, the transformer can realize multiple functions such as impedance matching, power synthesis and the like, and is one of the most important radio frequency devices.
The conventional transformer structure is shown in fig. 1, and is composed of a primary coil series unit and a secondary coil unit. The radio frequency input signal is coupled to the output port output by coupling between the two coil units.
The conventional transformer has the following disadvantages: in modern mobile communication, the number of turns ratio of the traditional transformer is fixed, and the traditional transformer is only suitable for a single situation, and needs to be redesigned for different application situations, or a plurality of transformers are needed to meet the application, so that the cost is increased.
Disclosure of Invention
The invention provides an on-chip integrated variable turns ratio transformer, which aims to overcome the defect that the turns of the traditional transformer cannot be changed, and the on-chip integrated variable turns ratio transformer is provided, so that the turns ratio of the transformer can be changed as required, the use is flexible, and the cost is reduced.
The technical solution of the invention is as follows: an on-chip integrated variable turns ratio transformer comprises an A primary coil unit, an A switch unit, a B primary coil unit, a B switch unit and a secondary coil unit, wherein the positive electrode of the A primary coil unit is connected to a radio frequency input port positive electrode in+, the negative electrode of the A primary coil unit is connected to an i input port of the A switch unit, an o1 output port of the A switch unit is connected to an o1 output port of the B switch unit, an o2 output port of the A switch unit is connected to the positive electrode of the B primary coil unit, the negative electrode of the B primary coil unit is connected to an o2 output port of the B switch unit, the i input port of the B switch unit is connected to a radio frequency input port negative electrode in-, the positive electrode of the secondary coil is connected to a radio frequency output port positive electrode out+, and electromagnetic coupling exists between the secondary coil unit and the A primary coil unit and the B primary coil unit, and the radio frequency input signal is coupled and output; the turns ratio of the transformer is controlled by the switch unit A and the switch unit B, the turns of the primary coil unit A is M1, the turns of the primary coil unit B is M2, and the turns of the secondary coil unit N1, so that the transformer with the turns ratio of M1 to N1 or (M1+M2) to N1 can be realized.
The invention has the beneficial effects that:
(1) The turns ratio of the transformer can be changed according to the needs, various impedance changes, voltage transformation and current transformation can be provided, various use environments can be dealt with, and the cost of the device is saved.
(2) When the traditional transformer is applied to various applications, a plurality of transformers are required to be designed correspondingly, and the invention can be applied to various applications, only one design is needed, and the time cost is saved.
(3) The invention can be realized by adopting various processes such as RF CMOS, gaAs, biCMOS, SOI and the like for monolithic integration, has low cost and wide application prospect and value.
Drawings
Fig. 1 is a schematic diagram of a conventional transformer circuit.
Fig. 2 is a block diagram of an on-chip integrated variable turns ratio transformer.
Fig. 3 is a schematic diagram of an on-chip integrated variable turns ratio transformer.
Fig. 4 is an equivalent schematic diagram of two modes of operation of the on-chip integrated variable turns ratio transformer.
Fig. 5 shows the matching of a conventional structure and an on-chip integrated variable turns ratio transformer structure of the present invention when the impedances are different versus (a) a conventional structure (b) a structure of the present invention.
Fig. 6 is a schematic diagram of a multiple turns ratio transformer implemented with multiple primary windings.
Fig. 7 is a specific circuit diagram of a multiple turns ratio transformer implemented with multiple primary windings.
In the figure, li1, li2 and Lo1 are inductances, M1, M2, M3 and M4 are transistors, R1, R2, R3 and R4 are resistors, o1 and o2 are output ports, i is an input port, in+ is a positive electrode of a radio frequency input port, in-is a negative electrode of the radio frequency input port, and VC and VCF are control signals.
Detailed Description
An on-chip integrated variable turns ratio transformer comprises an A primary coil unit, an A switch unit, a B primary coil unit, a B switch unit and a secondary coil unit, wherein the positive electrode of the A primary coil unit is connected to a radio frequency input port positive electrode in+, the negative electrode of the A primary coil unit is connected to an i input port of the A switch unit, an o1 output port of the A switch unit is connected to an o1 output port of the B switch unit, an o2 output port of the A switch unit is connected to the positive electrode of the B primary coil unit, the negative electrode of the B primary coil unit is connected to an o2 output port of the B switch unit, the i input port of the B switch unit is connected to a radio frequency input port negative electrode in-, the positive electrode of the secondary coil is connected to a radio frequency output port positive electrode out+, and electromagnetic coupling exists between the secondary coil unit and the A primary coil unit and the B primary coil unit, and the radio frequency input signal is coupled and output; the turns ratio of the transformer is controlled by the switch unit A and the switch unit B, the turns of the primary coil unit A is M1, the turns of the primary coil unit B is M2, and the turns of the secondary coil unit N1, so that the transformer with the turns ratio of M1 to N1 or (M1+M2) to N1 can be realized.
The on-chip integrated variable turns ratio transformer includes one or more primary coil units therein to realize a larger variety of turns ratio transformers.
The primary coil unit A comprises a Li1 inductor; the positive electrode of the Li1 inductor is connected to the positive electrode of the radio frequency input port, and the negative electrode of the Li1 inductor is connected to the i input port of the A switch unit.
The A switch unit comprises an M1 transistor, an M2 transistor, an R1 resistor and an R2 resistor; the drain electrode of the M1 transistor is connected to the drain electrode of the M2 transistor and is simultaneously connected to the i input port of the A switch unit, the source electrode of the M1 transistor is connected to the o1 output port of the A switch unit and is simultaneously connected to the o1 output port of the B switch unit, and the grid electrode of the M1 transistor is connected to the A end of the R1 resistor; the B end of the R1 resistor is connected to VC control voltage; the source electrode of the M2 transistor is connected to the positive electrode of the B primary coil unit and is simultaneously connected to the o2 output port of the A switch unit, and the grid electrode of the M2 transistor is connected to the A end of the R2 resistor; the B terminal of the R2 resistor is connected to the VCF control voltage.
The B primary coil unit comprises a Li2 inductor; the positive electrode of the Li2 inductor is connected to the o2 output port of the A switch unit, and the negative electrode of the Li2 inductor is connected to the o2 output port of the B switch unit.
The B switch unit comprises an M3 transistor, an M4 transistor, an R3 resistor and an R4 resistor; the drain electrode of the M3 transistor is connected to the o1 output port of the A switch unit and is simultaneously connected to the o1 output port of the B switch unit, the source electrode of the M3 transistor is connected to the source electrode of the M4 transistor and is simultaneously connected to the negative electrode in-of the radio frequency input port, and the grid electrode of the M3 transistor is connected to the A end of the R3 resistor; the B end of the R3 resistor is connected to the VC control signal port; the drain electrode of the M4 transistor is connected to the negative electrode port of the B primary coil unit and is simultaneously connected to the o2 output port of the B switch unit, the grid electrode of the M4 transistor is connected to the A end of the R4 resistor, and the B end of the R4 resistor is connected to the VCF control signal port.
The secondary coil unit comprises a Lo1 inductor; the positive electrode of the Lo1 inductor is connected to the positive electrode out+ of the output port, and the negative electrode of the Lo1 inductor is connected to the negative electrode out-of the output port; the Lo1 inductive forward coupling terminal is coupled to the inductive Li1 in the a primary coil unit, the forward coupling terminal of Li2 in the B primary coil unit.
The VC and VCF are a pair of inverted control signals; when the VC control signal is high and the VCF control signal is low, the M1 transistor and the M3 transistor are turned on, the M2 transistor and the M4 transistor are turned off, and the turn ratio of the transformer is equal to the ratio of the Li1 inductance turns to the Lo1 inductance turns; when the VC control signal is low and the VCF control signal is high, the M1 transistor and the M3 transistor are turned off, the M2 transistor and the M4 transistor are turned on, and the turn ratio of the transformer is equal to the ratio of the total turns of the Li1 inductor plus the Li2 inductor to the turns of the Lo1 inductor; the voltage turns ratio is adjustable by controlling VC and VCF; the number of units of the primary coil is 1 or more to realize various turns ratio changes.
The technical scheme of the invention is further described below with reference to the accompanying drawings
As shown in fig. 2, an on-chip integrated variable turns ratio transformer comprises an a primary coil unit, an a switch unit, a B primary coil unit, a B switch unit and a secondary coil unit, wherein the positive electrode of the a primary coil unit is connected to a radio frequency input port positive electrode in+, the negative electrode of the a primary coil unit is connected to an input port i of the a switch unit, an output port o1 of the a switch unit is connected to an output port o1 of the B switch unit, an output port o2 of the a switch unit is connected to the positive electrode of the B primary coil unit, the negative electrode of the B primary coil unit is connected to an output port negative electrode in-, the secondary coil positive electrode is connected to a radio frequency output port positive electrode out+, the negative electrode of the B switch unit is connected to a radio frequency output port negative electrode out-, and electromagnetic coupling exists between the secondary coil unit and the a primary coil unit and the B primary coil unit, and the output of the radio frequency input signal is coupled. The turns ratio of the transformers is controlled by the switch units A and B, and if the turns number of the primary coil units A is M1, the turns number of the primary coil units B is M2 and the turns number of the secondary coil units N1, two turns ratio transformers of M1 to N1 and (M1 + M2) to N1 can be realized, and the number of the primary coil units can also be multiple, so that more turns ratio transformers can be realized.
As shown in fig. 3, the on-chip integrated variable turns ratio transformer is characterized in that the a primary coil unit includes an inductance Li1; the positive electrode of Li1 is connected to the positive electrode of the radio frequency input port, and the negative electrode of Li1 is connected to the port i of the A switch unit.
The switch unit A comprises a transistor M1, a transistor M2, a resistor R1 and a resistor R2; the drain of the transistor M1 is connected to the drain of the transistor M2 and simultaneously connected to the port i of the A switch unit, the source of the transistor M1 is connected to the port o1 of the A switch unit and simultaneously connected to the port o1 of the B switch unit, and the gate of the transistor M1 is connected to the resistor R1; the other end of the resistor R1 is connected to a control voltage VC; the source electrode of the transistor M2 is connected to the positive electrode of the primary coil unit B and is connected to the port o2 of the switch unit A, and the grid electrode of the transistor M2 is connected to one end of the resistor R2; the other end of the resistor R2 is connected to the control voltage VCF.
The primary coil unit B comprises an inductor Li2; the positive electrode of the inductor Li2 is connected to the port o2 of the A switch unit, and the negative electrode of the inductor Li2 is connected to the port o2 of the B switch unit.
The B switch unit comprises a transistor M3 and a transistor M4, a resistor R3 and a resistor R4; the drain electrode of the transistor M3 is connected to the port o1 of the A switch unit and is connected to the port o1 of the B switch unit, the source electrode of the transistor M3 is connected to the source electrode of the transistor M4 and is connected to the negative electrode in-of the radio frequency input port, and the grid electrode of the transistor M3 is connected to one end of the resistor R3; the other end of the resistor R3 is connected to the control signal port VC; the drain of the transistor M4 is connected to the negative terminal of the B primary coil unit while being connected to the port o2 of the B switch unit, the gate of the transistor M4 is connected to one end of the resistor R4, and the other end of the resistor R4 is connected to the control signal port VCF.
The secondary coil unit comprises an inductor Lo1; the positive electrode of the inductor Lo1 is connected to the positive electrode out+ of the output port, and the negative electrode of the inductor Lo2 is connected to the negative electrode out-of the output port; the forward coupling terminal of the inductor Lo2 is coupled to the forward coupling terminals of the inductors Li1, li 2.
As shown in fig. 4, VC and VCF are a pair of inverted control signals; assuming that the number of turns of Li1 in the primary coil unit A is M1, the number of turns of Li2 in the primary coil unit B is M2, and the number of turns of the secondary coil unit N1; when VC is high and VCF is low, the transistors M1 and M3 are on, the transistors M2 and M4 are off, and the equivalent schematic diagram of the transformer is shown in fig. 4 (a), and the turns ratio of the transformer is M1: n1, at this time,
Zin=(M1/N1) 2 ×R
v out =(N/M1) ×v in
i out =(M1/N1) ×i in ；
when VC is low and VCF is high, the transistors M1 and M3 are turned off, the transistors M2 and M4 are turned on, and the equivalent schematic diagram of the transformer is shown in fig. 4 (b), and the transformer turns ratio is (m1+m2): n1, at this time,
Zin=[(M1+M2)/N1] 2 ×R
v out =[N/(M1+M2)] ×v in
i out =[(M1+M2)/N1] ×i in ；
the voltage turns ratio is adjustable by controlling VC and VCF; the number of units of the primary coil may be plural to realize a more variety of turns ratio variations.
As shown in fig. 5, the matching condition of the conventional structure and the structure of the present invention when the impedances are different is compared (the source impedance is 50Ω, the load impedance is 25Ω and 75Ω respectively), in the conventional structure, when the load impedance is 25Ω, the matching is good, when the load impedance is switched to 75Ω, the impedance matching becomes worse, S11 is only-8, and the standard below-10 is not satisfied; when the invention is used, the two states can be respectively matched, the working state is switched by the switch according to different loads, and the matching is below-15 dB under both conditions.
As shown in fig. 6-7, various turns ratio transformer schematics and actual circuit diagrams are implemented for a plurality of primary coils.

Claims (3)

1. The on-chip integrated variable turns ratio transformer is characterized by comprising an A primary coil unit, an A switch unit, a B primary coil unit, a B switch unit and a secondary coil unit, wherein the positive electrode of the A primary coil unit is connected to the positive electrode (in+), the negative electrode of the A primary coil unit is connected to the i input port of the A switch unit, the o1 output port of the A switch unit is connected to the o1 output port of the B switch unit, the o2 output port of the A switch unit is connected to the positive electrode of the B primary coil unit, the negative electrode of the B primary coil unit is connected to the o2 output port of the B switch unit, the i input port of the B switch unit is connected to the negative electrode (in-), the positive electrode of the secondary coil is connected to the positive electrode (out+), the negative electrode of the secondary coil is connected to the negative electrode (out-), and electromagnetic coupling exists between the secondary coil unit and the A primary coil unit and the B primary coil unit, and the RF input signals are coupled and output; the turns ratio of the transformer is controlled by the switch unit A and the switch unit B, the turns of the primary coil unit A is M1, the turns of the primary coil unit B is M2 and the turns of the secondary coil unit N1, so that a transformer with the turns ratio of M1 to N1 or (M1+M2) to N1 can be realized;
the primary coil unit A comprises a Li1 inductor; the positive electrode of the Li1 inductor is connected to the positive electrode of the radio frequency input port, and the negative electrode of the Li1 inductor is connected to the i input port of the A switch unit;
the A switch unit comprises an M1 transistor, an M2 transistor, an R1 resistor and an R2 resistor; the drain electrode of the M1 transistor is connected to the drain electrode of the M2 transistor and is simultaneously connected to the i input port of the A switch unit, the source electrode of the M1 transistor is connected to the o1 output port of the A switch unit and is simultaneously connected to the o1 output port of the B switch unit, and the grid electrode of the M1 transistor is connected to the A end of the R1 resistor; the B end of the R1 resistor is connected to VC control voltage; the source electrode of the M2 transistor is connected to the positive electrode of the B primary coil unit and is simultaneously connected to the o2 output port of the A switch unit, and the grid electrode of the M2 transistor is connected to the A end of the R2 resistor; the B end of the R2 resistor is connected to the VCF control voltage;
the B primary coil unit comprises a Li2 inductor; the positive electrode of the Li2 inductor is connected to the o2 output port of the switch unit A, and the negative electrode of the Li2 inductor is connected to the o2 output port of the switch unit B;
the B switch unit comprises an M3 transistor, an M4 transistor, an R3 resistor and an R4 resistor; the drain electrode of the M3 transistor is connected to the o1 output port of the A switch unit and is simultaneously connected to the o1 output port of the B switch unit, the source electrode of the M3 transistor is connected to the source electrode of the M4 transistor and is simultaneously connected to the negative electrode (in-) of the radio frequency input port, and the grid electrode of the M3 transistor is connected to the A end of the R3 resistor; the B end of the R3 resistor is connected to the VC control signal port; the drain electrode of the M4 transistor is connected to the negative electrode port of the B primary coil unit and is simultaneously connected to the o2 output port of the B switch unit, the grid electrode of the M4 transistor is connected to the A end of the R4 resistor, and the B end of the R4 resistor is connected to the VCF control signal port;
the secondary coil unit comprises a Lo1 inductor; the positive electrode of the Lo1 inductor is connected to the positive electrode (out+), and the negative electrode of the Lo1 inductor is connected to the negative electrode (out-); the Lo1 inductance forward coupling end is coupled to the forward coupling ends of the Li1 inductance in the A primary coil unit and the Li2 inductance in the B primary coil unit.
2. An on-chip integrated variable turns ratio transformer as claimed in claim 1, wherein the on-chip integrated variable turns ratio transformer comprises a number of primary coil units greater than or equal to one to realize a larger number of turns ratio transformers.
3. An on-chip integrated variable turns ratio transformer according to claim 1, characterized in that said VC and VCF are a pair of inverted control signals; when the VC control signal is high and the VCF control signal is low, the M1 transistor and the M3 transistor are turned on, the M2 transistor and the M4 transistor are turned off, and the turn ratio of the transformer is equal to the ratio of the Li1 inductance turns to the Lo1 inductance turns; when the VC control signal is low and the VCF control signal is high, the M1 transistor and the M3 transistor are turned off, the M2 transistor and the M4 transistor are turned on, and the turn ratio of the transformer is equal to the ratio of the total turns of the Li1 inductor plus the Li2 inductor to the turns of the Lo1 inductor; the voltage turns ratio is adjustable by controlling the VC control signal and the VCF control signal; the number of units of the primary coil is 1 or more to realize various turns ratio changes.
CN201810587935.2A 2018-06-08 2018-06-08 On-chip integrated variable turns ratio transformer Active CN108447651B (en)

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CN109754989A (en) * 2019-01-30 2019-05-14 熊猫电子集团有限公司 A kind of line transformer and radio-frequency power amplifier

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