CN112968679B - Push-pull power amplification system and radio frequency front-end module - Google Patents
Push-pull power amplification system and radio frequency front-end module Download PDFInfo
- Publication number
- CN112968679B CN112968679B CN202110182311.4A CN202110182311A CN112968679B CN 112968679 B CN112968679 B CN 112968679B CN 202110182311 A CN202110182311 A CN 202110182311A CN 112968679 B CN112968679 B CN 112968679B
- Authority
- CN
- China
- Prior art keywords
- input
- output
- balun
- amplifying transistor
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003321 amplification Effects 0.000 title claims abstract description 33
- 238000003199 nucleic acid amplification method Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000006243 chemical reaction Methods 0.000 claims abstract description 66
- 230000017525 heat dissipation Effects 0.000 abstract description 12
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/26—Push-pull amplifiers; Phase-splitters therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention belongs to the technical field of amplifying circuits, and particularly relates to a push-pull power amplifying system. It comprises a substrate; an input conversion circuit configured to convert an input radio frequency signal into a first differential signal and a second differential signal; the first chip arranged on the substrate comprises a first power amplifier and is configured to receive a first differential signal, amplify the first differential signal and output the amplified first differential signal; the second chip comprises a second power amplifier and is configured to receive a second differential signal, amplify the second differential signal and output the amplified second differential signal, and the first chip and the second chip are arranged on the substrate in a relatively separated mode; and an output conversion circuit configured to convert the amplified first differential signal and the amplified second differential signal into output radio frequency signals. Therefore, the invention realizes that the heat dissipation of the push-pull power amplification system is improved and the power consumption loss is reduced by respectively arranging the first power amplifier and the second power amplifier on different chips.
Description
Technical Field
The invention belongs to the field of amplifying circuits, and particularly relates to a push-pull power amplifying system and a radio frequency front-end module.
Background
The push-pull power amplifying circuit is used as a core radio frequency unit in the communication system, and the performance characteristics of the push-pull power amplifying circuit have great influence on the overall system index and influence the transmission capacity of the communication system. The push-pull power amplifying circuit can achieve high power, high efficiency, small distortion and balanced overall performance. At present, a transistor in the push-pull power amplifying circuit can generate certain heat in the working process, so that the push-pull power amplifier is poor in heat dissipation, the performance of the push-pull power amplifier is seriously affected, and the power consumption is improved.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: aiming at the problem of heat dissipation of a push-pull power amplifier in the prior art, the push-pull power amplifying system is provided.
In order to solve the above technical problems, an embodiment of the present invention provides a push-pull power amplifying system, including:
a substrate;
an input conversion circuit configured to convert an input radio frequency signal into a first differential signal and a second differential signal;
the first chip comprises a first power amplifier and is configured to receive the first differential signal, amplify the first differential signal and output the amplified first differential signal;
The second chip comprises a second power amplifier and is configured to receive the second differential signal, amplify the second differential signal and output the amplified second differential signal, and the first chip and the second chip are arranged on the substrate in a relatively separated mode;
an output conversion circuit configured to convert the amplified first differential signal and the amplified second differential signal into output radio frequency signals.
Optionally, the input conversion circuit includes a first input balun, the output conversion circuit includes a first output balun, the first power amplifier includes a first amplifying transistor, and the second power amplifier includes a second amplifying transistor;
the first input balun comprises a plurality of first input ends, the first input ends of the first input balun are configured to receive the input radio-frequency signals, and the second input ends are connected with a grounding end or a power supply end;
the first input balun comprises a plurality of first output ends, the first output ends of the first input balun are connected with the input ends of the first amplifying transistors, the output ends of the first amplifying transistors are connected with the first input ends of the output balun, the second output ends of the first input balun are connected with the input ends of the second amplifying transistors, and the output ends of the second amplifying transistors are connected with the second input ends of the first output balun;
The first input balun comprises a main-stage coil and a secondary coil, the main-stage coil is provided with a plurality of main-stage input endpoints which are arranged at different positions, each main-stage input endpoint is correspondingly connected with the output end of one main-stage control switch, the input ends of the plurality of main-stage control switches are respectively connected with the plurality of first input ends, the secondary coil is provided with a plurality of secondary output endpoints which are arranged at different positions, each secondary output endpoint is correspondingly connected with the input end of one secondary control switch, and the output ends of the plurality of secondary control switches are respectively connected with the plurality of first output ends;
the main control switch and the secondary control switch are turned on or off according to control signals, so that input radio frequency signals of different frequency bands are adapted.
Optionally, the first input balun includes two first input ends and two first output ends, the primary coil includes a first primary input end point and a correspondingly connected first primary control switch, a second primary input end point and a correspondingly connected second primary control switch, and the secondary coil includes a first secondary output end point and a correspondingly connected first secondary control switch, a second secondary output end point and a correspondingly connected second secondary control switch;
The input end of the first main stage control switch is connected with one first output end, the output end of the first main stage control switch is connected with the first main stage input end point, the input end of the second main stage control switch is connected with the other first input end, and the output end of the second main stage control switch is connected with the second main stage input end point;
the input end of the first secondary control switch is connected with the first secondary output end point, the output end of the first secondary control switch is connected with one first output end, the input end of the second secondary control switch is connected with the second secondary output end point, and the output end of the second secondary control switch is connected with the other first output end;
when the first input balun is configured to receive a first input radio frequency signal, the first primary control switch and the first secondary control switch are closed, and the second primary control switch and the second secondary control switch are open;
when the first input balun is configured to receive a second input radio frequency signal, the second primary control switch and the second secondary control switch are closed, and the first primary control switch and the first secondary control switch are open.
Optionally, the circuit further comprises a first control chip disposed on the substrate, the first control chip being disposed between the first chip and the second chip of the substrate, the first control chip being configured to control the opening or closing of the plurality of primary and secondary control switches in the first input balun.
Still another push-pull power amplification system is provided, comprising: a substrate;
an input conversion circuit configured to convert an input radio frequency signal into a first differential signal and a second differential signal;
the first chip comprises a first power amplifier and is configured to receive the first differential signal, amplify the first differential signal and output the amplified first differential signal;
the second chip comprises a second power amplifier and is configured to receive the second differential signal, amplify the second differential signal and output the amplified second differential signal, and the first chip and the second chip are arranged on the substrate in a relatively separated mode;
an output conversion circuit configured to convert the amplified first differential signal and the amplified second differential signal into output radio frequency signals;
the input conversion circuit comprises a first input balun and a second input balun, the output conversion circuit further comprises a first output balun and a second output balun, the first power amplifier comprises a first amplifying transistor and a third amplifying transistor, and the second power amplifier comprises a second amplifying transistor and a fourth amplifying transistor;
The first input end of the first input balun is configured to receive a first input radio frequency signal, the second input end of the first input balun is connected with a grounding end or a power supply end, the first output end of the first input balun is connected with the input end of the first amplifying transistor, the output end of the first amplifying transistor is connected with the first input end of the first output balun, the second output end of the first input balun is connected with the input end of the second amplifying transistor, and the output end of the second amplifying transistor is connected with the second input end of the first output balun;
the first input end of the second input balun is configured to receive a second input radio frequency signal, the second input end is connected with a grounding end or a power supply end, the first output end of the second input balun is connected with the input end of the third amplifying transistor, the output end of the third amplifying transistor is connected with the first input end of the second output balun, the second output end of the second input balun is connected with the input end of the fourth amplifying transistor, and the output end of the fourth amplifying transistor is connected with the second input end of the second output balun.
Optionally, the circuit further comprises a control chip set disposed on the substrate, the control chip set being disposed between the first chip and the second chip of the substrate, the control chip set comprising a first sub-control chip configured to control bias signals of the first amplifying transistor and the second amplifying transistor and a second sub-control chip configured to control bias signals of the third amplifying transistor and the fourth amplifying transistor.
Optionally, the third amplifying transistor is disposed on a side of the first amplifying transistor away from the control chipset, the fourth amplifying transistor is disposed on a side of the second amplifying transistor away from the control chipset, the first amplifying transistor and the second amplifying transistor are both adjacent to the control chipset, the first amplifying transistor and the second amplifying transistor are configured to amplify a first input radio frequency signal, and the third amplifying transistor and the fourth amplifying transistor are configured to amplify a second input radio frequency signal, wherein a frequency band of the first input radio frequency signal is greater than a frequency band of the second input radio frequency signal.
Optionally, the first input balun disposed on a substrate is disposed adjacent to the first and second amplifying transistors; the second input balun disposed on a substrate is disposed adjacent to the third amplifying transistor and the fourth amplifying transistor; the first output balun is disposed on the substrate adjacent to the first amplifying transistor and the second amplifying transistor, and the second output balun is disposed on the substrate adjacent to the third amplifying transistor and the fourth amplifying transistor.
Optionally, the first output balun disposed on the substrate at least partially overlaps with a projection of the control chipset in a longitudinal direction, and the second output balun disposed on the substrate at least partially overlaps with a projection of the control chipset in a longitudinal direction.
The invention also provides a radio frequency front section module, which comprises the push-pull power amplification system.
The push-pull power amplification system of the invention comprises a substrate; an input conversion circuit configured to convert an input radio frequency signal into a first differential signal and a second differential signal; the first chip comprises a first power amplifier and is configured to receive the first differential signal, amplify the first differential signal and output the amplified first differential signal; the second chip comprises a second power amplifier and is configured to receive the second differential signal, amplify the second differential signal and output the amplified second differential signal, and the first chip and the second chip are arranged on the substrate in a relatively separated mode; an output conversion circuit configured to convert the amplified first differential signal and the amplified second differential signal into output radio frequency signals. According to the invention, the first power amplifier and the second power amplifier are respectively arranged on different chips, so that the first power amplifier and the second power amplifier are physically isolated, the phenomenon that the first power amplifier and the second power amplifier are heated and are aggravated due to mutual influence caused by heating in the working process is avoided, the heat dissipation of a push-pull power amplification system is improved, the performance of the push-pull power amplification system is finally ensured, and the power consumption loss is reduced.
Drawings
Fig. 1 is a schematic structural diagram of a push-pull power amplifying system according to a first embodiment of the present invention;
fig. 2 is a schematic structural diagram of a push-pull power amplifying system according to a second embodiment of the present invention;
fig. 3 is a schematic structural diagram of a push-pull power amplifying system according to a third embodiment of the present invention;
fig. 4 is a schematic structural diagram of a push-pull power amplifying system according to a fourth embodiment of the present invention;
fig. 5 is a schematic structural diagram of a push-pull power amplifying system according to a fifth embodiment of the present invention;
fig. 6 is a schematic structural diagram of a push-pull power amplifying system according to a sixth embodiment of the present invention;
fig. 7 is a schematic structural diagram of a push-pull power amplifying system according to a seventh embodiment of the present invention;
fig. 8 is a schematic structural diagram of a push-pull power amplifying system according to an eighth embodiment of the present invention.
Reference numerals in the specification are as follows:
1. an input conversion circuit; 11. a first input balun; 12. a second input balun; 2. a first chip; 21. a first power amplifier; 211. a first amplifying transistor; 212. a third amplifying transistor; 3. a second chip; 31. a second power amplifier; 311. a second amplifying transistor; 312. a fourth amplifying transistor; 4. an output conversion circuit; 41. a first output balun; 42. a second output balun; 5. a first control chip; 6. a control chipset; 7. a substrate; s1, a first main stage control switch; s2, a second main stage control switch; s3, a first secondary control switch; s4, a second secondary control switch.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects solved by the invention more clear, the invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1, an embodiment of the present invention provides a push-pull power amplification system, which includes a substrate 7, an input conversion circuit 1, a first chip 2, a second chip 3, and an output conversion circuit 4, and it is understood that the substrate 7 may be a PCB printed board, the input conversion circuit 1, the first chip 2, the second chip 3, and the output conversion circuit 4 are disposed on the substrate 7, and the input conversion circuit 1 is electrically connected to an input terminal of a first power amplifier 21 in the first chip 2 and an input terminal of a second power amplifier 31 in the second chip 3, respectively, and an output terminal of the first power amplifier 21 and an output terminal of the second power amplifier 31 are electrically connected to the output conversion circuit 4.
The input conversion circuit 1 is configured to convert an input radio frequency signal into a first differential signal and a second differential signal. As can be appreciated, the input conversion circuit 1 is configured to receive the input radio frequency signal and perform a first conversion on the radio frequency signal, where the first conversion process may be set according to a design requirement of the circuit, for example, the first conversion process is that a single-ended radio frequency input signal is converted into the first differential signal and the second differential signal through an input balun and then output, and the input radio frequency signal is a radio frequency signal of any frequency band to be amplified, for example, a radio frequency signal of an N77 frequency band, a radio frequency signal of an N79 frequency band, and so on.
It should be noted that, the input conversion circuit 1 may include one or more input balun, and may convert input radio frequency signals of different frequency bands by only one input balun, or may convert radio frequency signals of different frequency bands by a plurality of input balun.
The first chip 2 is disposed on the substrate 7, the first chip 2 includes a first power amplifier 21 configured to receive the first differential signal, amplify the first differential signal, and output the amplified first differential signal, and the first chip 2 is understandably a semiconductor chip and is disposed on the substrate 7, where the first power amplifier 21 is included in the first chip 2, that is, the first power amplifier 21 is integrated, and the first power amplifier 21 is configured to receive the first differential signal, amplify the first differential signal, and output the amplified first differential signal.
The second chip 3 is disposed on the substrate 7, the second chip 3 includes a second power amplifier 31 configured to receive the second differential signal, amplify the second differential signal and output the amplified second differential signal, where the first chip 2 and the second chip 3 are disposed at different positions on the substrate 7 and are relatively separated from each other, and understandably, the second chip 3 belongs to a semiconductor chip and is disposed on the substrate 7, the second chip 3 includes the second power amplifying circuit, that is, the second power amplifier 31 is integrated, the second power amplifier 31 is configured to receive the second differential signal, amplify the second differential signal, and output the amplified second differential signal, where the first chip 2 and the second chip 3 are disposed at different positions on the substrate 7 and are separated from each other relatively, that is, the first chip 2 and the second chip 3 are separated from each other on the substrate 7 in physical space, so, by the relatively separated arrangement, the first chip 2 and the second chip 3 can be isolated from each other, and the heat dissipation of the second chip 3 is not affected by the heat dissipation of the second power amplifier 31, and the heat dissipation of the heat dissipation system is not affected by the heat dissipation of the second power amplifier is improved, and the heat dissipation of the heat dissipation system is generated. Wherein the first power amplifier 21 and the second power amplifier 21 may be composed of one or more power amplifying transistors.
The output conversion circuit 4 is configured to convert the amplified first differential signal and the amplified second differential signal into output radio frequency signals, and the output conversion circuit 4 understandably performs a second conversion on the received amplified first differential circuit signal and the amplified second differential signal, and finally outputs the output radio frequency signals. The second conversion process may be set according to a design requirement of a circuit, for example, the second conversion process may be an output balun conversion process, and the second conversion process may also be an inverse process of the first conversion (input balun conversion), that is, the first differential circuit signal amplified by the first power amplifier and the second differential signal amplified by the second power amplifier are converted and then output the output radio frequency signal, where the output radio frequency signal is a radio frequency signal obtained by differentially amplifying the input radio frequency signal.
It should be noted that, the output conversion circuit 4 may include one or more output balun, and may convert only one output balun for the first differential circuit signal and the second differential signal in different frequency bands, or may convert the first differential circuit signal and the second differential signal in different frequency bands respectively by using a plurality of input balun.
Thus, the push-pull power amplifying system of the present invention includes a substrate 7; an input conversion circuit 1 configured to convert an input radio frequency signal into a first differential signal and a second differential signal; a first chip 2 disposed on the substrate 7, the first chip 2 including a first power amplifier 21 configured to receive the first differential signal and amplify and output the first differential signal; a second chip 3 disposed on the substrate 7, where the second chip 3 includes a second power amplifier 31 configured to receive the second differential signal, amplify the second differential signal, and output the amplified second differential signal, and the first chip 2 and the second chip 3 are disposed on the substrate 7 in a relatively separated manner; an output conversion circuit 4 configured to convert the amplified first differential signal and the amplified second differential signal into output radio frequency signals. Therefore, the invention realizes that the first power amplifier 21 and the second power amplifier 31 are respectively arranged on different chips, so that the first power amplifier 21 and the second power amplifier 31 are physically isolated, the heat dissipation of the push-pull power amplification system is improved, the performance of the push-pull power amplification system is finally ensured, and the power consumption loss is reduced.
In an embodiment, as shown in fig. 2 and 3, the input conversion circuit 1 includes a first input balun 11, the output conversion circuit 4 includes a first output balun 41, the first power amplifier 21 includes a first amplifying transistor 211, and the second power amplifier 31 includes a second amplifying transistor 311, wherein the first input balun 11 is electrically connected to the first amplifying transistor 211 and the second amplifying transistor 311, and the first output balun 41 is electrically connected to the first amplifying transistor 211 and the second amplifying transistor 311.
The first input balun 11 includes a plurality of first input terminals, the first input terminal of the first input balun 11 is configured to receive the input radio frequency signal, the second input terminal is connected to a ground terminal or a power source terminal, the first input balun 11 includes a plurality of first output terminals, the first output terminal of the first input balun 11 is connected to the input terminal of the first amplifying transistor 211, the output terminal of the first amplifying transistor 211 is connected to the first input terminal of the output balun, the second output terminal of the first input balun 11 is connected to the input terminal of the second amplifying transistor 311, and the output terminal of the second amplifying transistor 311 is connected to the second input terminal of the first output balun 41.
As will be appreciated, the first input balun 11 converts the unbalanced input radio frequency signal into a double-ended differential signal for long-distance transmission, the first input balun 11 includes a first input end, a second input end, a first output end and a second output end, the first input end of the first input balun 11 is used for receiving the input radio frequency signal, the second input end of the first input balun 11 is connected to a ground terminal or a power source terminal, wherein the power source terminal can selectively connect a voltage source or a current source provided according to a circuit requirement, such as a voltage source of +5v or +12v, and the like, and the first output balun 41 includes a plurality of first input ends, one second input end, a plurality of first output ends and one second output end.
The first input balun comprises a main-stage coil and a secondary coil, the main-stage coil is provided with a plurality of main-stage input end points arranged at different positions, each main-stage input end point is correspondingly connected with the output end of one main-stage control switch, the input ends of the plurality of main-stage control switches are respectively connected with the plurality of first input ends, the secondary coil is provided with a plurality of secondary output end points arranged at different positions, each secondary output end point is correspondingly connected with the input end of one secondary control switch, and the output ends of the plurality of secondary control switches are respectively connected with the plurality of first output ends
It may be understood that the primary coil and the secondary coil in the first input balun 11 are spiral coils formed by winding wires of a metal layer, different parts of the primary coil have the primary input end point and the primary control switch, where the selection of the primary input end point at the part of the primary coil may be set according to different frequency bands, that is, the radio frequency signal of one frequency band corresponds to the part of one primary coil, each primary input end point is correspondingly connected to an output end of one primary control switch, that is, each primary input end point is controlled to be in an on-off state by the corresponding primary control switch, and different parts of the secondary coil have an output end point and a control switch, where the selection of the secondary output end point at the part of the secondary coil may be set according to different frequency bands, that is, the radio frequency signal of one frequency band corresponds to the part of one secondary coil, each secondary output end point is correspondingly connected to an output end of one secondary control switch, that is connected to an input end of one secondary control switch, that is, each secondary output end of the secondary output end point is correspondingly connected to one secondary control switch is respectively connected to the first input end of the first input of the second input balun, and the second input end of the first input end of the second input balun is controlled by the first input end of the second input balun. The main control switch and the secondary control switch are turned on or off according to control signals, so that input radio frequency signals of different frequency bands are adapted.
It can be understood that the control signal has a one-to-one mapping correspondence with the frequency band to which the input rf signal belongs, that is, the control signal can distinguish which frequency band the input rf signal is adapted to, for example: the input radio frequency signal is a radio frequency signal of an N77 frequency band, the control signal is a signal which is used for controlling a main control switch and a secondary control switch corresponding to the N77 frequency band, the main control switch and the secondary control switch corresponding to the N77 frequency band can be controlled to be opened through the control signal, all the remaining main control switches and the remaining secondary control switches are closed, and then the input radio frequency signal can be processed through input balun conversion corresponding to the N77 frequency band and the main coil, and the input radio frequency signal can be processed through input balun conversion corresponding to the N77 frequency band and the secondary coil, so that the main control switch and the secondary control switch which are used for switching different positions of different radio frequency signals are realized, and corresponding input balun conversion is carried out.
Wherein the input radio frequency signal outputs the first differential signal and the second differential signal under the combined action of the primary coil and the secondary coil of the first input balun 11. In this way, the first input balun 11 comprises the primary coil and the secondary coil, so that the primary control switch of the primary coil and the secondary control switch of the secondary coil at different positions can be switched to different radio frequency signals, input balun conversion corresponding to the input radio frequency signals is performed, a first differential signal and a second differential signal are obtained, the function of switching the primary control switch corresponding to the primary coil and the secondary control switch corresponding to the secondary coil according to the control signals is achieved, the function of automatically matching the input radio frequency signals of the first input balun 11 is achieved, the switching of the frequency band diversity of the input radio frequency signals is met, the conversion requirement of multiple frequency bands can be achieved without expanding the capacity of the substrate 7, the space of the substrate 7 is saved, the cost is reduced, and the flexible variability of the first input balun 11 is achieved.
In an embodiment, as shown in fig. 3, the first input balun includes two first input ends and two first output ends, the primary coil includes a first primary input end point and a correspondingly connected first primary control switch S1, a second primary input end point and a correspondingly connected second primary control switch S2, and the secondary coil includes a first secondary output end point and a correspondingly connected first secondary control switch S3, a second secondary output end point and a correspondingly connected second secondary control switch S4.
The input end of the first main stage control switch is connected with one first output end, the output end of the first main stage control switch is connected with the first main stage input end point, the input end of the second main stage control switch is connected with the other first input end, and the output end of the second main stage control switch is connected with the second main stage input end point; the input end of the first secondary control switch is connected with the first secondary output end point, the output end of the first secondary control switch is connected with one first output end, the input end of the second secondary control switch is connected with the second secondary output end point, and the output end of the second secondary control switch is connected with the other first output end; when the first input balun is configured to receive a first input radio frequency signal, the first primary control switch and the first secondary control switch are closed, and the second primary control switch and the second secondary control switch are open; when the first input balun is configured to receive a second input radio frequency signal, the second primary control switch and the second secondary control switch are closed, and the first primary control switch and the first secondary control switch are open.
The primary coil and the secondary coil are spiral coils formed by winding wires of a metal layer, the primary coil comprises a first primary input end point and a first primary control switch which are correspondingly connected, and a second primary input end point and a second primary control switch which are correspondingly connected, the input end of the first primary control switch is connected with one of the first input ends of the input balun, and the input end of the second primary control switch is connected with the other first input end of the input balun. The secondary coil comprises a first secondary output endpoint and a first secondary control switch correspondingly connected with the first secondary output endpoint, a second secondary output endpoint and a second secondary control switch correspondingly connected with the second secondary output endpoint, the input end of the first secondary control switch is connected with the first secondary output endpoint, the output end of the first secondary control switch is connected with a first output end, the input end of the second secondary control switch is connected with the second secondary output endpoint, and the output end of the second secondary control switch is connected with another first output end.
When the first input balun 11 is configured to receive a first input radio frequency signal, the first primary and secondary control switches are closed and the second primary and secondary control switches are opened.
Understandably, the input radio frequency signal includes a first input radio frequency signal and a second input radio frequency signal, where the frequency bands to which the first input radio frequency signal and the input radio frequency signal belong are different, for example: the first input radio frequency signal may be an N77 band input radio frequency signal, the second input radio frequency signal may be an N79 band input radio frequency signal, when the first input balun 11 is configured to receive the first input radio frequency signal, a control signal is sent by a control chip to control the first primary control switch and the first secondary control switch in the first input balun 11 to be closed, and the second primary control switch and the second secondary control switch are opened to lead out the first secondary output end point to be connected with the first output end of the first input balun 11. For example: the first main stage input endpoint and the first secondary output endpoint are correspondingly input balun conversion of an N77 frequency band, a control signal is sent out through a control chip to control the first main stage control switch and the first secondary control switch to be closed, the second main stage control switch and the second secondary control switch to be opened, and the converted first differential signal and second differential signal are output through the first output end and the second output end of the input balun.
When the first input balun 11 is configured to receive a second input radio frequency signal, the second primary and secondary control switches are closed and the first primary and secondary control switches are opened.
As can be appreciated, when the first input balun 11 is configured to receive a second input radio frequency signal, a control signal is sent by the control chip to control the second primary control switch and the second secondary control switch in the first input balun 11 to be closed, and the first primary control switch and the first secondary control switch to be opened, so as to lead out the second secondary output end point to be connected with the first output end of the first input balun 11, so as to output the first differential signal and the second differential signal by the first output end and the second output end, for example: the second main stage input endpoint and the second secondary output endpoint are correspondingly input balun conversion of N79 frequency bands, a control signal is sent out through a control chip to control the second main stage control switch and the second secondary control switch to be closed, the first main stage control switch and the first secondary control switch are opened, and the converted first differential signal and second differential signal are output through the first output end and the second output end of the input balun.
In this embodiment, the first primary control switch, the second primary control switch, the first secondary control switch, and the second secondary control switch are determined to be turned off or turned on according to the frequency band of the radio frequency input signal, if the frequency band of the radio frequency input signal is large (for example, the N79 frequency band), the second primary control switch and the second secondary control switch are turned on, and the first primary control switch and the first secondary control switch are turned off, so that the lengths of inductance wires connected to the primary coil and the secondary coil of the first input balun are shorter. If the frequency band of the radio frequency input signal is smaller (for example, the N77 frequency band), the first main-stage control switch and the first secondary control switch are closed, and the second main-stage control switch and the second secondary control switch are turned off, so that the length of an inductance wire connected with a main-stage coil and a secondary coil of the first input balun is longer; thereby realizing that the radio frequency input signals with different frequency bands can be adapted by adopting a first input balun.
As such, the present invention is achieved by the first primary control switch and the first secondary control switch being turned off when the first input balun 11 is configured to receive a first input radio frequency signal, the second primary control switch and the second secondary control switch being turned off; when the first input balun 11 is configured to receive the second input radio frequency signal, the second primary control switch and the second secondary control switch are turned off, and the first primary control switch and the first secondary control switch are turned off, so that the first primary control switch, the first secondary control switch, the second primary control switch and the second secondary control switch in the primary coil and the secondary coil are turned on or off under the control of the control chip according to the configured first input radio frequency signal or the second input radio frequency signal, and the corresponding conversion output is realized according to the input radio frequency signals in different frequency bands, the conversion requirement of multiple frequency bands can be met without expanding the capacity of the substrate 7, the space of the substrate 7 is saved, the cost is reduced, and the flexible variability of the first input balun 11 is realized.
In an embodiment, as shown in fig. 4, the input conversion circuit 1 includes a first input balun 11 and a second input balun 12, the output conversion circuit 4 further includes a first output balun 41 and a second output balun 42, the first power amplifier 21 includes a first amplifying transistor 211 and a third amplifying transistor 212, and the second power amplifier 31 includes a second amplifying transistor 311 and a fourth amplifying transistor 312.
As can be appreciated, the first power amplifier 21 includes electronic components of the first amplifying transistor 211 and the third amplifying transistor 212, the first amplifying transistor 211 and the third amplifying transistor 212 are amplifying transistors corresponding to different frequency bands, and may be set according to circuit requirements, for example, the first amplifying transistor 211 is an amplifying transistor suitable for the N79 frequency band, the third amplifying transistor 212 is an amplifying transistor suitable for the N77 frequency band, the second power amplifier 31 includes electronic components of the second amplifying transistor 311 and the fourth amplifying transistor 312, the second amplifying transistor 311 and the fourth amplifying transistor 312 are amplifying transistors corresponding to different frequency bands, and may be set according to circuit requirements, for example, the second amplifying transistor 311 is an amplifying transistor suitable for the N79 frequency band, and the fourth amplifying transistor 312 is an amplifying transistor suitable for the N77 frequency band, that is, the first amplifying transistor 311 and the fourth amplifying transistor 312 correspond to the third amplifying transistor 312.
The first input terminal of the first input balun 11 is configured to receive a first input radio frequency signal, the second input terminal is connected to a ground terminal or a power supply terminal, the first output terminal of the first input balun 11 is connected to the input terminal of the first amplifying transistor 211, the output terminal of the first amplifying transistor 211 is connected to the first input terminal of the first output balun 41, the second output terminal of the first input balun 11 is connected to the input terminal of the second amplifying transistor 311, and the output terminal of the second amplifying transistor 311 is connected to the second input terminal of the first output balun 41.
The first input terminal of the second input balun 12 is configured to receive a second input radio frequency signal, the second input terminal is connected to a ground terminal or a power supply terminal, the first output terminal of the second input balun 12 is connected to the input terminal of the third amplifying transistor 212, the output terminal of the third amplifying transistor 212 is connected to the first input terminal of the second output balun 42, the second output terminal of the second input balun 12 is connected to the input terminal of the fourth amplifying transistor 312, and the output terminal of the fourth amplifying transistor 312 is connected to the second input terminal of the second output balun 42.
Understandably, the input radio frequency signals include a first input radio frequency signal and a second input radio frequency signal, where the frequency bands to which the first input radio frequency signal and the second input radio frequency signal belong are different, for example: the first input rf signal may be an N79-band input rf signal, the second input rf signal may be an N77-band input rf signal, the first rf signal is converted by the first input balun 11 and then is input to the input end of the first amplifying transistor 211 through the first output end of the first input balun 11, amplified by the first amplifying transistor 211 and then is output to be transmitted to the first input end of the first output balun 41 through the output end of the first amplifying transistor 211, and meanwhile is input to the input end of the second amplifying transistor 311 through the first output end of the first input balun 11, amplified by the second amplifying transistor 311 and then is output to be transmitted to the second input end of the first output balun 41 through the output end of the second amplifying transistor 311; the second radio frequency signal is converted by the second input balun 12, then is input to the input end of the third amplifying transistor 212 through the first output end of the second input balun 12, amplified by the third amplifying transistor 212, then is output and transmitted to the first input end of the second output balun 42 through the output end of the third amplifying transistor 212, and is input to the input end of the fourth amplifying transistor 312 through the second output end of the second input balun 12, amplified by the fourth amplifying transistor 312, and then is output and transmitted to the second input end of the second output balun 42 through the output end of the fourth amplifying transistor 312.
Thus, the first input terminal of the first input balun 11 is configured to receive a first input radio frequency signal, the second input terminal is connected with a ground terminal or a power supply terminal, the first output terminal of the first input balun 11 is connected with the input terminal of the first amplifying transistor 211, the output terminal of the first amplifying transistor 211 is connected with the first input terminal of the first output balun 41, the second output terminal of the first input balun 11 is connected with the input terminal of the second amplifying transistor 311, and the output terminal of the second amplifying transistor 311 is connected with the second input terminal of the first output balun 41; the first input terminal of the second input balun 12 is configured to receive a second input radio frequency signal, the second input terminal is connected to a ground terminal or a power supply terminal, the first output terminal of the second input balun 12 is connected to the input terminal of the third amplifying transistor 212, the output terminal of the third amplifying transistor 212 is connected to the first input terminal of the second output balun 42, the second output terminal of the second input balun 12 is connected to the input terminal of the fourth amplifying transistor 312, and the output terminal of the fourth amplifying transistor 312 is connected to the second input terminal of the second output balun 42, so that corresponding amplifying transistors with different frequency bands are selected for amplifying according to the configured first input radio frequency signal or second input radio frequency signal, and the corresponding amplified radio frequency signal is output. The first power amplifier 21 and the second power amplifier can make corresponding amplification output by adopting corresponding different power amplification transistors according to input radio frequency signals in different frequency bands, so that the switching of the frequency band diversity of the input radio frequency signals is satisfied, the multi-band amplification requirement can be achieved without expanding the capacity of the substrate 7, the space of the substrate 7 is saved, the cost is reduced, and the flexible variability of the first power amplifier 21 and the second power amplifier 31 is realized. And because the input radio frequency signals of different frequency bands are converted and amplified by adopting different input balun, different amplifying transistors and different output balun, the push-pull power amplifying system in the embodiment can realize the conversion and amplification of the input radio frequency signals of different frequency bands at the same time, and improves the working efficiency of the push-pull power amplifying system.
In an embodiment, as shown in fig. 5, the push-pull power amplification system further comprises a first control chip 5 disposed on a substrate 7, the first control chip 5 being disposed between the first chip 2 and the second chip 3 of the substrate 7, the first control chip being configured to control the opening or closing of the plurality of primary control switches and the plurality of secondary control switches in the first input balun. Specifically, the first control chip 5 is used as a control chip for controlling the input conversion circuit 1 to adapt to the input radio frequency signals of different frequency bands, and the control signal sent by the first control chip 5 controls the first input balun 11 in the input conversion circuit 1 to switch different primary control switches and secondary control switches according to the input radio frequency signals of different frequency bands, so as to control the input conversion circuit 1 to switch according to the input radio frequency signals of different frequency bands.
Further, the first control chip 5 is connected to a first offset port on the first chip 2 and a second offset port on the second chip 3, respectively. As can be appreciated, the first control chip 5 may be set according to a circuit requirement, the first control chip controls the bias circuit corresponding to the first amplifying transistor 211 of the first chip 2 and the bias circuit corresponding to the second amplifying transistor 311 of the second chip 3 to provide respective bias currents or/and bias voltages according to input radio frequency signals of different frequency bands, the first bias port is a port of the first control chip 5 connected to the bias circuit in the first chip 2 through a pin line, and the second bias port is a port of the control chip connected to the bias circuit in the second chip 3 through a pin line, for example, the first control chip 5 may include a plurality of CMOS transistors, and the bias circuits corresponding to the first amplifying transistor 211 of the first chip 2 and the bias circuit corresponding to the second amplifying transistor 311 of the second chip 3 are controlled through on-off states of the CMOS transistors to provide respective bias currents or/and bias voltages, so as to meet the switching requirement of the radio frequency signals of the first chip 2 and the second chip 3 for different frequency bands.
In an embodiment, as shown in fig. 6, the push-pull power amplifying system further includes a control chipset 6 disposed on the substrate 7, the control chipset 6 being disposed between the first chip 2 and the second chip 3 of the substrate, the control chipset 6 including a first sub-control chip configured to control bias signals of the first amplifying transistor and the second amplifying transistor and a second sub-control chip configured to control bias signals of the third amplifying transistor and the fourth amplifying transistor. Specifically, the first sub-control chip is connected to a first bias port on the first chip 2 and a second bias port on the second chip 3, respectively, and the second sub-control chip is connected to a third bias port on the first chip 2 and a fourth bias port on the second chip 3, respectively, and it is understood that the control chipset 6 may be set according to circuit requirements. In this embodiment, when the first power amplifier includes a first amplifying transistor and a third amplifying transistor, and the second power amplifier includes a second amplifying transistor and a fourth amplifying transistor, the first sub-control chip is a bias circuit corresponding to the first amplifying transistor 211 of the first chip 2 and a bias circuit corresponding to the second amplifying transistor 311 of the second chip 3 respectively controlled according to the input radio frequency signals of different frequency bands. The second sub-control chip is a bias circuit corresponding to the third amplifying transistor 212 of the first chip 2 and a bias circuit corresponding to the fourth amplifying transistor 312 of the second chip 3 respectively controlled according to the input radio frequency signals of different frequency bands. The third bias port is a port of the control chip connected to the bias circuit in the first chip 2 through a pin line, the fourth bias port is a port of the control chip connected to the bias circuit in the second chip 3 through a pin line, for example, the first sub-control chip and the second sub-control chip may include a plurality of CMOS transistors, and the bias circuit in the first chip 2 and the bias circuit in the second chip 3 are controlled to provide corresponding bias current or/and bias voltage through the on-off state of the CMOS transistors, so that the switching of the bias circuits of the first chip 2 and the second chip 3 is completed, and the switching requirement of the first chip 2 and the second chip 3 for input radio frequency signals in different frequency bands is met. Meanwhile, the control chipset 6 may also be used as a control chip for controlling the input conversion circuit 1 to adapt to the input radio frequency signals of different frequency bands, and the control signal sent by the control chipset 6 controls the switching of the first input balun 11 and the second input balun 12 in the input conversion circuit 1, so as to switch different input balun for the input radio frequency signals of different frequency bands, and play a role in controlling the input conversion circuit 1 to switch different input balun for the input radio frequency signals of different frequency bands.
In this embodiment, the control chipset 6 may include only one sub-control chip, that is, only one control chip may be used to control the amplifying transistors in different frequency bands, that is, a plurality of different pins are set in one control chip, and the amplifying transistors in different frequency bands are led out to bias circuits corresponding to the amplifying transistors in different frequency bands through different pin lines; the control chip set 6 may include a plurality of sub-control chips, that is, a plurality of control chips may be respectively used to control the amplifying transistors in different frequency bands, that is, one control chip controls the amplifying transistors in one frequency band. The push-pull power amplification system can be reduced by adopting one control chip to control the amplifying transistors in different frequency bands. The amplifying transistors in different frequency bands are controlled by adopting a plurality of control chips, so that the phenomenon that signal interference occurs in the working process of amplifying the amplifying transistors in different frequency bands simultaneously can be avoided.
In an embodiment, as shown in fig. 7, the third amplifying transistor 212 is disposed on a side of the first amplifying transistor 211 away from the control chipset 6, the fourth amplifying transistor 312 is disposed on a side of the second amplifying transistor 311 away from the control chipset 6, and the first amplifying transistor 311 and the second amplifying transistor 311 are both adjacent to the control chipset 6. The first amplifying transistor and the second amplifying transistor are configured to amplify a first input radio frequency signal, and the third amplifying transistor and the fourth amplifying transistor are configured to amplify a second input radio frequency signal, wherein a frequency band of the first input radio frequency signal is greater than a frequency band of the second input radio frequency signal.
Understandably, the first amplifying transistor 211 and the third amplifying transistor 212 are disposed on the first chip 2, and the second amplifying transistor 311 and the fourth amplifying transistor 312 are disposed on the second chip 3. Preferably, the first amplifying transistor 211 and the second amplifying transistor 311 are amplifying transistors suitable for the N79 frequency band, the third amplifying transistor 212 and the fourth amplifying transistor 312 are amplifying transistors suitable for the N77 frequency band, the first input balun 41 is disposed at a position adjacent to the first amplifying transistor 211 and the second amplifying transistor 311, the second input balun 42 is disposed at a position adjacent to the third amplifying transistor 212 and the fourth amplifying transistor 312, and the first amplifying transistor 211 and the second amplifying transistor 311 in the first chip 2 are isolated from the third amplifying transistor 212 and the fourth amplifying transistor 312 in the second chip 3 in physical space, so that heat between the first chip 2 and the second chip 3 can be spatially separated, heat accumulation is not easy to occur, the situation of reverse heat accumulation is not aggravated, the push-pull power transmission performance is not influenced, and the push-pull power transmission performance is not improved.
In an embodiment, the first output balun 41 arranged on the substrate 7 at least partially overlaps with the projection of the first control chip 5 in the longitudinal direction, and the second output balun 42 arranged on the substrate 7 at least partially overlaps with the projection of the first control chip 5 in the longitudinal direction.
It may be appreciated that the first output balun 41 and the second control chip 6 are disposed on different layers of the substrate, at least partially overlapping component parts exist in the projections of the first output balun 41 and the first control chip 5 in the longitudinal direction, the second output balun 42 and the first control chip 5 are disposed on different layers of the substrate, at least partially overlapping component parts exist in the projections of the second output balun 42 and the second control chip 6 in the longitudinal direction, so that routing of the first control chip 5 and the first output balun 41 on the substrate 7 is more convenient and optimal, the routing of the second control chip 6 and the second output balun 42 on the substrate 7 is more convenient and optimal, the second control chip 6 is convenient to transmit signals to the second output balun 42, switching of the first output balun 41 and the second output balun 42 is more convenient and optimal, the processing cost of the substrate is reduced, the push-pull system is reduced, and the processing cost of the substrate is reduced.
In an embodiment, as shown in fig. 8, the first input balun 11 disposed on the substrate 7 is disposed adjacent to the first amplifying transistor 211 and the second amplifying transistor 311; the second input balun 12 provided on the substrate 7 is provided adjacent to the third amplifying transistor 212 and the fourth amplifying transistor 312. The first output balun 41 is disposed on the substrate 7 and adjacent to the first amplifying transistor 211 and the second amplifying transistor 311, and the second output balun 42 is disposed on the substrate 7 and adjacent to the third amplifying transistor 212 and the fourth amplifying transistor 312, so that the routing of the first amplifying transistor 211 and the second amplifying transistor 311 to the first output balun 41 is more convenient and optimal in performance, the signals of the first amplifying transistor 211 or/and the second amplifying transistor 311 are transmitted to the first output balun 41 with the lowest loss, the routing of the third amplifying transistor 212 and the fourth amplifying transistor 312 to the second output balun 42 is more convenient and optimal in performance, and the signals of the third amplifying transistor 212 or/and the fourth amplifying transistor 312 are transmitted to the second output balun 42 with the lowest loss, thereby improving the output power of the push-pull amplifying system 41 and the second output balun 42 more accurately.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (9)
1. A push-pull power amplification system, comprising:
a substrate;
an input conversion circuit configured to convert an input radio frequency signal into a first differential signal and a second differential signal;
the first chip comprises a first power amplifier and is configured to receive the first differential signal, amplify the first differential signal and output the amplified first differential signal;
the second chip comprises a second power amplifier and is configured to receive the second differential signal, amplify the second differential signal and output the amplified second differential signal, and the first chip and the second chip are arranged on the substrate in a relatively separated mode;
an output conversion circuit configured to convert the amplified first differential signal and the amplified second differential signal into output radio frequency signals;
the input conversion circuit comprises a first input balun, the output conversion circuit comprises a first output balun, the first power amplifier comprises a first amplifying transistor, and the second power amplifier comprises a second amplifying transistor;
The first input balun comprises a plurality of first input ends, the first input ends of the first input balun are configured to receive the input radio-frequency signals, and the second input ends are connected with a grounding end or a power supply end;
the first input balun comprises a plurality of first output ends, the first output ends of the first input balun are connected with the input ends of the first amplifying transistors, the output ends of the first amplifying transistors are connected with the first input ends of the output balun, the second output ends of the first input balun are connected with the input ends of the second amplifying transistors, and the output ends of the second amplifying transistors are connected with the second input ends of the first output balun;
the first input balun comprises a main-stage coil and a secondary coil, the main-stage coil is provided with a plurality of main-stage input endpoints which are arranged at different positions, each main-stage input endpoint is correspondingly connected with the output end of one main-stage control switch, the input ends of the plurality of main-stage control switches are respectively connected with the plurality of first input ends, the secondary coil is provided with a plurality of secondary output endpoints which are arranged at different positions, each secondary output endpoint is correspondingly connected with the input end of one secondary control switch, and the output ends of the plurality of secondary control switches are respectively connected with the plurality of first output ends;
The main control switch and the secondary control switch are turned on or off according to control signals, so that input radio frequency signals of different frequency bands are adapted.
2. The push-pull power amplification system of claim 1, wherein the first input balun comprises two first inputs and two first outputs, the primary coil comprises a first primary input terminal and a correspondingly connected first primary control switch, a second primary input terminal and a correspondingly connected second primary control switch, and the secondary coil comprises a first secondary output terminal and a correspondingly connected first secondary control switch, a second secondary output terminal and a correspondingly connected second secondary control switch;
the input end of the first main stage control switch is connected with one first output end, the output end of the first main stage control switch is connected with the first main stage input end point, the input end of the second main stage control switch is connected with the other first input end, and the output end of the second main stage control switch is connected with the second main stage input end point;
the input end of the first secondary control switch is connected with the first secondary output end point, the output end of the first secondary control switch is connected with one first output end, the input end of the second secondary control switch is connected with the second secondary output end point, and the output end of the second secondary control switch is connected with the other first output end;
When the first input balun is configured to receive a first input radio frequency signal, the first primary control switch and the first secondary control switch are closed, and the second primary control switch and the second secondary control switch are open;
when the first input balun is configured to receive a second input radio frequency signal, the second primary control switch and the second secondary control switch are closed, and the first primary control switch and the first secondary control switch are open.
3. The push-pull power amplification system of claim 1, further comprising a first control chip disposed on a substrate, the first control chip disposed between the first chip and the second chip of the substrate, the first control chip configured to control the opening or closing of the plurality of primary control switches and the plurality of secondary control switches in the first input balun.
4. A push-pull power amplification system, comprising:
a substrate;
an input conversion circuit configured to convert an input radio frequency signal into a first differential signal and a second differential signal;
the first chip comprises a first power amplifier and is configured to receive the first differential signal, amplify the first differential signal and output the amplified first differential signal;
The second chip comprises a second power amplifier and is configured to receive the second differential signal, amplify the second differential signal and output the amplified second differential signal, and the first chip and the second chip are arranged on the substrate in a relatively separated mode;
an output conversion circuit configured to convert the amplified first differential signal and the amplified second differential signal into output radio frequency signals;
the input conversion circuit comprises a first input balun and a second input balun, the output conversion circuit further comprises a first output balun and a second output balun, the first power amplifier comprises a first amplifying transistor and a third amplifying transistor, and the second power amplifier comprises a second amplifying transistor and a fourth amplifying transistor;
the first input end of the first input balun is configured to receive a first input radio frequency signal, the second input end of the first input balun is connected with a grounding end or a power supply end, the first output end of the first input balun is connected with the input end of the first amplifying transistor, the output end of the first amplifying transistor is connected with the first input end of the first output balun, the second output end of the first input balun is connected with the input end of the second amplifying transistor, and the output end of the second amplifying transistor is connected with the second input end of the first output balun;
The first input end of the second input balun is configured to receive a second input radio frequency signal, the second input end is connected with a grounding end or a power supply end, the first output end of the second input balun is connected with the input end of the third amplifying transistor, the output end of the third amplifying transistor is connected with the first input end of the second output balun, the second output end of the second input balun is connected with the input end of the fourth amplifying transistor, and the output end of the fourth amplifying transistor is connected with the second input end of the second output balun.
5. The push-pull power amplification system of claim 4, further comprising a control chipset disposed on a substrate, the control chipset disposed between the first chip and the second chip of the substrate, the control chipset comprising a first sub-control chip configured to control bias signals of the first amplifying transistor and the second amplifying transistor and a second sub-control chip configured to control bias signals of the third amplifying transistor and the fourth amplifying transistor.
6. The push-pull power amplification system of claim 5, wherein the third amplification transistor is disposed on a side of the first amplification transistor remote from the control chipset, the fourth amplification transistor is disposed on a side of the second amplification transistor remote from the control chipset, the first and second amplification transistors are each adjacent to the control chipset, the first and second amplification transistors are configured to amplify a first input radio frequency signal, and the third and fourth amplification transistors are configured to amplify a second input radio frequency signal, wherein a frequency band of the first input radio frequency signal is greater than a frequency band of the second input radio frequency signal.
7. The push-pull power amplification system of claim 5, wherein the first input balun disposed on a substrate is disposed adjacent to the first and second amplifying transistors; the second input balun disposed on a substrate is disposed adjacent to the third amplifying transistor and the fourth amplifying transistor; the first output balun is disposed on the substrate adjacent to the first amplifying transistor and the second amplifying transistor, and the second output balun is disposed on the substrate adjacent to the third amplifying transistor and the fourth amplifying transistor.
8. The push-pull power amplification system of claim 5, wherein the first output balun disposed on the substrate at least partially overlaps a projection of the control chipset in a longitudinal direction, and the second output balun disposed on the substrate at least partially overlaps a projection of the control chipset in a longitudinal direction.
9. A radio frequency front end module comprising a push-pull power amplification system as claimed in claims 1-8.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311113563.7A CN117097278A (en) | 2021-02-08 | 2021-02-08 | Push-pull power amplification system and radio frequency front-end module |
| CN202110182311.4A CN112968679B (en) | 2021-02-08 | 2021-02-08 | Push-pull power amplification system and radio frequency front-end module |
| PCT/CN2022/073513 WO2022166652A1 (en) | 2021-02-08 | 2022-01-24 | Push-pull power amplification system and radio frequency front-end module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110182311.4A CN112968679B (en) | 2021-02-08 | 2021-02-08 | Push-pull power amplification system and radio frequency front-end module |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311113563.7A Division CN117097278A (en) | 2021-02-08 | 2021-02-08 | Push-pull power amplification system and radio frequency front-end module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112968679A CN112968679A (en) | 2021-06-15 |
| CN112968679B true CN112968679B (en) | 2023-09-19 |
Family
ID=76284727
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110182311.4A Active CN112968679B (en) | 2021-02-08 | 2021-02-08 | Push-pull power amplification system and radio frequency front-end module |
| CN202311113563.7A Pending CN117097278A (en) | 2021-02-08 | 2021-02-08 | Push-pull power amplification system and radio frequency front-end module |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311113563.7A Pending CN117097278A (en) | 2021-02-08 | 2021-02-08 | Push-pull power amplification system and radio frequency front-end module |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN112968679B (en) |
| WO (1) | WO2022166652A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112968679B (en) * | 2021-02-08 | 2023-09-19 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplification system and radio frequency front-end module |
| CN115549617B (en) * | 2021-06-30 | 2024-08-02 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplifying circuit and radio frequency front end module |
| CN113922762B (en) * | 2021-09-09 | 2024-08-02 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplifying circuit and push-pull power amplifying chip |
| CN114189215B (en) * | 2021-10-29 | 2024-08-30 | 锐石创芯(深圳)科技股份有限公司 | Radio frequency power amplifying circuit and radio frequency front end module |
| CN114257181A (en) * | 2021-12-22 | 2022-03-29 | 锐石创芯(深圳)科技股份有限公司 | Radio frequency circuit, radio frequency front end module and push-pull power amplifier |
| CN116846351A (en) * | 2022-03-23 | 2023-10-03 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplifying circuit |
| CN219999370U (en) * | 2022-12-30 | 2023-11-10 | 锐石创芯(深圳)科技股份有限公司 | Radio frequency module |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101714852A (en) * | 2009-09-22 | 2010-05-26 | 锐迪科微电子（上海）有限公司 | Double-frequency radio-frequency power amplifier circuit chip |
| CN105471397A (en) * | 2015-12-11 | 2016-04-06 | 锐迪科创微电子（北京）有限公司 | Double-frequency radio frequency power amplification module |
| CN107046408A (en) * | 2017-04-14 | 2017-08-15 | 上海华虹宏力半导体制造有限公司 | A kind of low cost radio frequency difference amplifier |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10336292A1 (en) * | 2003-08-01 | 2005-02-17 | Atmel Germany Gmbh | Transmitting and receiving device with at least two pairs of one each transmitting power amplifier and a low-noise input amplifier |
| JP4288529B2 (en) * | 2004-06-30 | 2009-07-01 | 日立金属株式会社 | High frequency components and multiband communication devices |
| US7129784B2 (en) * | 2004-10-28 | 2006-10-31 | Broadcom Corporation | Multilevel power amplifier architecture using multi-tap transformer |
| US7526256B2 (en) * | 2005-05-25 | 2009-04-28 | Broadcom Corporation | Transformer-based multi-band RF front-end architecture |
| CN107425873A (en) * | 2017-08-31 | 2017-12-01 | 锐石创芯（厦门）科技有限公司 | Radio frequency front-end device and the electronic equipment for including it |
| CN109462411A (en) * | 2018-11-26 | 2019-03-12 | 锐石创芯（深圳）科技有限公司 | RF Amplifier Module and communication terminal |
| CN109951165A (en) * | 2019-03-25 | 2019-06-28 | 广东宽普科技股份有限公司 | A kind of S-band signal power amplifying circuit |
| JP2020205550A (en) * | 2019-06-18 | 2020-12-24 | 株式会社村田製作所 | Semiconductor element and power amplifier device |
| CN211405977U (en) * | 2020-01-22 | 2020-09-01 | 深圳飞骧科技有限公司 | Radio frequency power amplifying device for 5G-NR frequency band |
| CN112187194B (en) * | 2020-09-30 | 2022-04-19 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplifier, radio frequency front-end circuit and wireless device |
| CN112968679B (en) * | 2021-02-08 | 2023-09-19 | 锐石创芯(深圳)科技股份有限公司 | Push-pull power amplification system and radio frequency front-end module |
-
2021
- 2021-02-08 CN CN202110182311.4A patent/CN112968679B/en active Active
- 2021-02-08 CN CN202311113563.7A patent/CN117097278A/en active Pending
-
2022
- 2022-01-24 WO PCT/CN2022/073513 patent/WO2022166652A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101714852A (en) * | 2009-09-22 | 2010-05-26 | 锐迪科微电子（上海）有限公司 | Double-frequency radio-frequency power amplifier circuit chip |
| CN105471397A (en) * | 2015-12-11 | 2016-04-06 | 锐迪科创微电子（北京）有限公司 | Double-frequency radio frequency power amplification module |
| CN107046408A (en) * | 2017-04-14 | 2017-08-15 | 上海华虹宏力半导体制造有限公司 | A kind of low cost radio frequency difference amplifier |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022166652A1 (en) | 2022-08-11 |
| CN112968679A (en) | 2021-06-15 |
| CN117097278A (en) | 2023-11-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112968679B (en) | Push-pull power amplification system and radio frequency front-end module | |
| CN102714084B (en) | There is the integrated transformer of multiple transformation ratio | |
| US10742189B2 (en) | Switched multi-coupler apparatus and modules and devices using same | |
| CN110932747B (en) | Integrated high-performance radio frequency transmit-receive switch | |
| US20130043955A1 (en) | Signal amplification circuits for receiving/transmitting signals according to input signal | |
| CN103368601B (en) | Wireless communication transceiver front end | |
| CN110311630A (en) | System and method for bypassing low-noise amplifier | |
| WO2010141908A1 (en) | Multiple multi-mode low-noise amplifier receiver with shared degenerative inductors | |
| WO1997023053A1 (en) | Transmitter-receiver circuit for radio communication and semiconductor integrated circuit device | |
| JP5900756B2 (en) | Power amplification module | |
| CN109600142B (en) | Front-end module and communication device | |
| US10594273B2 (en) | Power amplifier module | |
| CN111742491B (en) | Switching circuit, high-frequency front-end circuit, and communication device | |
| CN105049016B (en) | The single-pole double throw RF switch and hilted broadsword of single-pole single-throw(SPST RF switch and its composition throw RF switch more | |
| US10992286B2 (en) | Signal switching systems and modules and devices using same | |
| CN102707635A (en) | High-frequency switching assembly, transmitter and method | |
| CN101908881A (en) | Directional coupler and radio-frequency power amplifier containing same | |
| US8279010B2 (en) | Radio frequency power amplifier | |
| CN111865283A (en) | High power RF switch with low leakage current and low insertion loss | |
| US20230030709A1 (en) | Broadband low noise amplifier using multiple cascode stages | |
| US20110128079A1 (en) | Multi-band power amplifier with high-frequency transformer | |
| CN102832790B (en) | Power generating circuit and switching circuit | |
| CN108447651B (en) | On-chip integrated variable turns ratio transformer | |
| JP6466872B2 (en) | Communication circuit | |
| CN105680801A (en) | Multimode power amplifier capable of dissipating heat in balance and application of multimode power amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 518000 room 2001, building 3, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen City, Guangdong Province Applicant after: Ruishi Chuangxin (Shenzhen) Technology Co.,Ltd. Address before: 518000 room 2001, building 3, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen City, Guangdong Province Applicant before: AN ADVANCED RF POWER AMPLIFIER AND COMMUNICATION DEVICE |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |