CN112967922A - Process method for processing 12-inch silicon polished wafer - Google Patents
Process method for processing 12-inch silicon polished wafer Download PDFInfo
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- CN112967922A CN112967922A CN201911280084.8A CN201911280084A CN112967922A CN 112967922 A CN112967922 A CN 112967922A CN 201911280084 A CN201911280084 A CN 201911280084A CN 112967922 A CN112967922 A CN 112967922A
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- polishing
- cleaning
- wafer
- liquid
- wafer box
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- 238000000034 method Methods 0.000 title claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 37
- 239000010703 silicon Substances 0.000 title claims abstract description 37
- 238000005498 polishing Methods 0.000 claims abstract description 93
- 238000004140 cleaning Methods 0.000 claims abstract description 72
- 235000012431 wafers Nutrition 0.000 claims abstract description 61
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 37
- 239000007788 liquid Substances 0.000 claims abstract description 32
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000001035 drying Methods 0.000 claims abstract description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 12
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 6
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 239000004744 fabric Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 abstract description 21
- 239000002184 metal Substances 0.000 abstract description 16
- 229910052751 metal Inorganic materials 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000003672 processing method Methods 0.000 abstract 1
- 238000007517 polishing process Methods 0.000 description 6
- 238000005201 scrubbing Methods 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000861 blow drying Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007518 final polishing process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
Abstract
The invention discloses a processing method of a 12-inch silicon polished wafer. The process method comprises the following steps: (1) NOTCH polishing and edge polishing are carried out on the 12-inch silicon wafer with the polished two surfaces, then the silicon wafer is placed into a wafer box, and the wafer box is placed into a normal-temperature water tank filled with pure water; (2) cleaning a wafer box with silicon wafers in No. 1 liquid, and then cleaning the wafer box in No. 2 liquid; the composition of the No. 1 liquid is as follows: ammonia water, hydrogen peroxide and pure water in a volume ratio of 1: 5-1: 5: 10, wherein the No. 2 liquid comprises the following components: hydrochloric acid, hydrogen peroxide and pure water in a volume ratio of 1: 5-1: 5: 10; (3) and (3) putting the cleaned wafer box filled with the silicon wafers into a water tank with warm water, and slowly lifting the wafer box upwards to achieve the aim of drying. The process method can be used for manufacturing the 12-inch silicon wafer with low surface particles and metal content, and is beneficial to reducing the surface particles and metal of the 12-inch silicon wafer after the fine polishing.
Description
Technical Field
The invention relates to a process method for processing a 12-inch silicon polishing sheet, in particular to a method for removing surface contamination of the 12-inch polishing sheet by cleaning and drying, belonging to the technical field of semiconductor materials.
Background
Currently, the mainstream process line width of integrated circuits has entered 28/14 nanometer era from 90/65 nanometer era. 12 inch polishing pads, which are the primary material in integrated circuit fabrication, place higher demands on surface particles and metals. The polishing process flow of the 90/65 nanometer era 12-inch polishing piece is edge polishing, cleaning, double-side polishing, cleaning and final polishing. In the 28/14 nm age, the parameter requirement of the 12-inch polishing sheet becomes high, and the polishing process flow is changed into double-sided polishing, cleaning, edge polishing, cleaning and final polishing. The cleaning process after polishing the edge of the 90/65 nm 12-inch polished wafer generally comprises two steps, namely sponge scrubbing in the first step and spin-drying and blow-drying in the second step, and the cleaning process not only has poor effect on removing particles and surface metals, but also causes surface damage. For the 12-inch polished wafer in the 90/65 nanometer era, the subsequent double-sided polishing and cleaning process can remove the residual surface particles, metal and damage, so that the cleaning process adopted after the edge polishing has no big problem, but for the 12-inch polished wafer in the 28/14 nanometer era, the silicon wafer parameter requirement becomes high, and the process flow is changed, so that the final polishing process is directly carried out after the edge polishing and cleaning process is completed on the silicon wafer. This requires that a 12 inch polishing pad after the edge polishing + cleaning process be finished to achieve low surface particle, low surface metal requirements. Therefore, there is a need to provide a new method for cleaning the edge of a 12-inch polishing pad after polishing.
Disclosure of Invention
The invention aims to provide a process method for processing a 12-inch silicon polishing sheet, in particular to a process method for removing surface contamination of the 12-inch polishing sheet by cleaning and drying to reduce surface particles and surface metal.
In order to achieve the purpose, the invention adopts the following technical scheme:
a process method for processing a 12-inch silicon polishing sheet comprises the following steps:
(1) NOTCH polishing and edge polishing are carried out on the 12-inch silicon wafer with the polished two surfaces, then the silicon wafer is placed into a wafer box, and the wafer box is placed into a normal-temperature water tank filled with pure water;
(2) cleaning a wafer box with silicon wafers in No. 1 liquid, and then cleaning the wafer box in No. 2 liquid; the composition of the No. 1 liquid is as follows: ammonia water, hydrogen peroxide and pure water in a volume ratio of 1: 5-1: 5: 10, wherein the No. 2 liquid comprises the following components: hydrochloric acid, hydrogen peroxide and pure water in a volume ratio of 1: 5-1: 5: 10;
(3) and (3) putting the cleaned wafer box filled with the silicon wafers into a water tank with warm water, and slowly lifting the wafer box upwards to achieve the aim of drying.
In the process method, NOTCH (V-shaped groove reference surface) polishing means that a NOTCH positioning opening is formed in the edge of a 12-inch silicon wafer, the wafer cannot be polished by ordinary edge polishing, and the wafer needs to be polished by special NOTCH polishing cloth.
In the process of the present invention, in step (1), the NOTCH polishing parameters are: the rotation speed of the polishing cloth is 400-1000rpm, the polishing pressure is 1-10N, and the polishing time is 10-70 s; edge polishing involves four polishing surfaces (upper and lower inclined surfaces, front and rear vertical surfaces) whose polishing parameters are: the polishing pressure is 20-80N, the high-speed polishing time is 30-80s, the high-speed polishing rotation speed is 700rpm, the low-speed polishing time is 10-30s, and the low-speed polishing rotation speed is 100 rpm.
In the process method, in the step (2), the cleaning temperature of the cleaning with the No. 1 liquid and the cleaning temperature of the cleaning with the No. 2 liquid are respectively 75-90 ℃, and the cleaning time is respectively 5-15 min.
In the process method, in the step (3), the temperature of warm water in a water tank is 60-80 ℃, and the upward pulling speed is 1-10 mm/min.
The invention has the advantages that:
the improvement of the invention lies in the improvement of the cleaning and drying process after the edge polishing (the common process adopts sponge scrubbing and blow drying, and the process of the invention adopts No. 1 liquid and No. 2 liquid for cleaning and slow lifting drying, which is equivalent to the introduction of advanced cleaning and drying process in the previous process, and finally obtains good results in terms of particles and metal.
The process method can be used for manufacturing the 12-inch silicon wafer with low surface particles and metal content, and is beneficial to reducing the surface particles and metal of the 12-inch silicon wafer after the fine polishing.
Detailed Description
The present invention is further illustrated by the following examples, which are not intended to limit the scope of the present invention.
Example 1
Ultrasonically cleaning 20 grinding sheets, and drying; then putting the mixture on a loose pulley sheet of a double-sided polishing machine in 4 batches for polishing, wherein the polishing parameters are as follows: the upper disc rotating speed is 15rpm, the lower disc rotating speed is 30rpm, the sun gear rotating speed is 20rpm, the polishing pressure is 12000Pa, and the polishing time is 60 min; taking down, carrying out ultrasonic cleaning, drying, randomly taking 10 pieces, and carrying out NOTCH polishing, wherein the polishing parameters are as follows: the rotation speed of the polishing cloth is 600rpm, the polishing pressure is 5N, and the polishing time is 56 s; performing edge polishing after NOTCH polishing, wherein the pressure of four polishing surfaces is 40N, the high-speed polishing time is 50s, the high-speed polishing rotating speed is 500rpm, the low-speed polishing time is 10s, and the low-speed polishing rotating speed is 300 rpm; after the edge polishing is finished, soaking the wafer in a wafer box of a normal-temperature pure water tank, then putting the wafer box containing the silicon wafer into No. 1 liquid for cleaning, wherein the proportion of the No. 1 liquid is (ammonia water: hydrogen peroxide: pure water is 1: 5), the cleaning temperature is 80 ℃, the cleaning time is 10min, then putting the wafer box into No. 2 liquid for cleaning, the proportion of the No. 2 liquid is (hydrochloric acid: hydrogen peroxide: pure water is 1: 5), the cleaning temperature is 80 ℃, and the cleaning time is 10 min; putting the cleaned wafer box filled with the silicon wafers into a water tank with warm water at 75 ℃, and then slowly lifting upwards for drying, wherein the lifting speed is 2 mm/min; after drying, carrying out finish polishing, wherein the first step of polishing process parameters comprise polishing head rotation speed of 45rpm, silicon wafer rotation speed of 45rpm, pressure of 1000N and time of 70s, and the second step of polishing process parameters comprise polishing head rotation speed of 45rpm, silicon wafer rotation speed of 45rpm, pressure of 500N and time of 70 s; then sending to final cleaning, wherein the cleaning process parameters comprise that firstly, the No. 1 liquid is put into the cleaning machine for cleaning, the ratio of the No. 1 liquid is (ammonia water: hydrogen peroxide: pure water is 1: 5), the cleaning temperature is 80 ℃, the cleaning time is 10min, then, the No. 2 liquid is put into the cleaning machine for cleaning, the ratio of the No. 2 liquid is (hydrochloric acid: hydrogen peroxide: pure water is 1: 5), the cleaning temperature is 80 ℃, the cleaning time is 10min, the cleaning machine is put into DHF (0.5% HF + pure water) cleaning liquid for cleaning at normal temperature for cleaning for 6min, finally, the cleaning machine is put into pure water containing 45% IPA for soaking, and the silicon wafer is dried after water is discharged; after cleaning, the surface particles and metal are sent to be measured.
Performing NOTCH polishing on the other 10 remaining silicon wafers, wherein the rotating speed of polishing cloth is 600rpm, the polishing pressure is 5N, and the polishing time is 56 s; performing edge polishing after NOTCH polishing, wherein the pressure of four polishing surfaces is 40N, the high-speed polishing time is 50s, the high-speed polishing rotating speed is 500rpm, the low-speed polishing time is 10s, and the low-speed polishing rotating speed is 300 rpm; scrubbing with sponge, cleaning for 10s, then placing the wafer into a support, rotating while blowing nitrogen for drying, wherein the rotation speed of the silicon wafer is 1000rpm, the drying is 35s, and performing finish polishing after drying, wherein the first step of polishing process parameters comprise the rotation speed of a polishing head of 45rpm, the rotation speed of the silicon wafer of 45rpm, the pressure of 1000N and the time of 70s, and the second step of polishing process parameters comprise the rotation speed of the polishing head of 45rpm, the rotation speed of the silicon wafer of 45rpm, the pressure of 500N and the time of 70 s; then sending to final cleaning, wherein the cleaning process parameters comprise that firstly, the No. 1 liquid is put into the cleaning machine for cleaning, the ratio of the No. 1 liquid is (ammonia water: hydrogen peroxide: pure water is 1: 5), the cleaning temperature is 80 ℃, the cleaning time is 10min, then, the No. 2 liquid is put into the cleaning machine for cleaning, the ratio of the No. 2 liquid is (hydrochloric acid: hydrogen peroxide: pure water is 1: 5), the cleaning temperature is 80 ℃, the cleaning time is 10min, the cleaning machine is put into DHF (0.5% HF + pure water) cleaning liquid for cleaning at normal temperature for cleaning for 6min, finally, the cleaning machine is put into pure water containing 45% IPA for soaking, and the silicon wafer is dried after water is discharged; after cleaning, the surface particles and metal are sent to be measured.
The detection result shows that the number average value of 10 pieces (No. 1-10 pieces) processed by the method is 12 per piece, the number average value of 65nm or more particles is 35 per piece, the number average value of 32nm or more particles is 51 per piece, and the metal content is shown in Table 1; 10 pieces (No. 11-20 pieces) processed by the traditional method have the average number of particles with the diameter of more than or equal to 90nm of 37 particles per piece, the average number of particles with the diameter of more than or equal to 65nm of 68 particles per piece, the average number of particles with the diameter of more than or equal to 32nm of 106 particles per piece, and the metal content is shown in Table 1. It can be seen that polishing sheets having low surface particle and metal content can be produced using the process of the present invention.
TABLE 1 silicon wafer surface Metal Density ([ 1E10atom/cm ]2)
| Na | Al | Ca | K | Fe | Ni | Cr | Zn | Cu | |
| Mean of tablets No. 1-10 | 1.8 | 1.5 | 1.4 | 1.2 | 0.25 | 0.18 | 0.21 | 0.13 | 0.15 |
| Mean of 11-20 tablets | 4.3 | 4.6 | 3.9 | 3.5 | 0.62 | 0.59 | 0.74 | 0.82 | 0.75 |
Claims (4)
1. A process method for processing a 12-inch silicon polishing sheet is characterized by comprising the following steps:
(1) NOTCH polishing and edge polishing are carried out on the 12-inch silicon wafer with the polished two surfaces, then the silicon wafer is placed into a wafer box, and the wafer box is placed into a normal-temperature water tank filled with pure water;
(2) cleaning a wafer box with silicon wafers in No. 1 liquid, and then cleaning the wafer box in No. 2 liquid; the composition of the No. 1 liquid is as follows: ammonia water, hydrogen peroxide and pure water in a volume ratio of 1: 5-1: 5: 10, wherein the No. 2 liquid comprises the following components: hydrochloric acid, hydrogen peroxide and pure water in a volume ratio of 1: 5-1: 5: 10;
(3) and (3) putting the cleaned wafer box filled with the silicon wafers into a water tank with warm water, and slowly lifting the wafer box upwards to achieve the aim of drying.
2. The process of claim 1, wherein in step (1), the NOTCH polishing parameters are: the rotation speed of the polishing cloth is 400-1000rpm, the polishing pressure is 1-10N, and the polishing time is 10-70 s; the edge polishing parameters were: the polishing pressure is 20-80N, the high-speed polishing time is 30-80s, the high-speed polishing rotation speed is 700rpm, the low-speed polishing time is 10-30s, and the low-speed polishing rotation speed is 100 rpm.
3. The process method as claimed in claim 1, wherein in the step (2), the cleaning temperature of the No. 1 liquid cleaning and the cleaning temperature of the No. 2 liquid cleaning are respectively 75-90 ℃, and the cleaning time is respectively 5-15 min.
4. The process according to claim 1, wherein in the step (3), the temperature of the warm water in the water tank is 60 to 80 ℃, and the upward pulling speed is 1 to 10 mm/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911280084.8A CN112967922A (en) | 2019-12-12 | 2019-12-12 | Process method for processing 12-inch silicon polished wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911280084.8A CN112967922A (en) | 2019-12-12 | 2019-12-12 | Process method for processing 12-inch silicon polished wafer |
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| CN112967922A true CN112967922A (en) | 2021-06-15 |
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| CN201911280084.8A Pending CN112967922A (en) | 2019-12-12 | 2019-12-12 | Process method for processing 12-inch silicon polished wafer |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070259531A1 (en) * | 2006-05-04 | 2007-11-08 | Siltronic Ag | Method For Producing A Polished Semiconductor |
| CN101791779A (en) * | 2009-12-03 | 2010-08-04 | 北京有色金属研究总院 | Semiconductor silicon wafer manufacture process |
| US20120309278A1 (en) * | 2011-05-31 | 2012-12-06 | Semiconductor Manufacturing International (Shanghai) Corporation | Method for removing polishing byproducts and polishing device |
| CN102974565A (en) * | 2012-12-12 | 2013-03-20 | 天津中环领先材料技术有限公司 | Method for cleaning monocrystalline silicon polished wafer |
| CN104526493A (en) * | 2014-11-18 | 2015-04-22 | 天津中环领先材料技术有限公司 | Monocrystalline silicon wafer edge polishing technology |
| CN108962720A (en) * | 2017-05-18 | 2018-12-07 | 上海新昇半导体科技有限公司 | A kind of drying means of silicon wafer |
| CN109848826A (en) * | 2019-03-04 | 2019-06-07 | 天通日进精密技术有限公司 | Wafer multistation edge polishing equipment |
-
2019
- 2019-12-12 CN CN201911280084.8A patent/CN112967922A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070259531A1 (en) * | 2006-05-04 | 2007-11-08 | Siltronic Ag | Method For Producing A Polished Semiconductor |
| CN101791779A (en) * | 2009-12-03 | 2010-08-04 | 北京有色金属研究总院 | Semiconductor silicon wafer manufacture process |
| US20120309278A1 (en) * | 2011-05-31 | 2012-12-06 | Semiconductor Manufacturing International (Shanghai) Corporation | Method for removing polishing byproducts and polishing device |
| CN102974565A (en) * | 2012-12-12 | 2013-03-20 | 天津中环领先材料技术有限公司 | Method for cleaning monocrystalline silicon polished wafer |
| CN104526493A (en) * | 2014-11-18 | 2015-04-22 | 天津中环领先材料技术有限公司 | Monocrystalline silicon wafer edge polishing technology |
| CN108962720A (en) * | 2017-05-18 | 2018-12-07 | 上海新昇半导体科技有限公司 | A kind of drying means of silicon wafer |
| CN109848826A (en) * | 2019-03-04 | 2019-06-07 | 天通日进精密技术有限公司 | Wafer multistation edge polishing equipment |
Non-Patent Citations (1)
| Title |
|---|
| 刘玉岭等: "《超大规模集成电路衬底材料性能及加工测试技术工程》", 31 August 2002, 北京：冶金工业出版社, pages: 178 * |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Applicant after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Applicant before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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