CN116631848A - Silicon wafer cleaning method for improving quality of metal and particles on surface of silicon polished wafer - Google Patents

Silicon wafer cleaning method for improving quality of metal and particles on surface of silicon polished wafer Download PDF

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Publication number
CN116631848A
CN116631848A CN202310890445.0A CN202310890445A CN116631848A CN 116631848 A CN116631848 A CN 116631848A CN 202310890445 A CN202310890445 A CN 202310890445A CN 116631848 A CN116631848 A CN 116631848A
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Prior art keywords
cleaning
silicon
silicon wafer
wafer
flushing
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CN202310890445.0A
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Chinese (zh)
Inventor
王玥
王正阳
于兴瑞
于亚迪
孙艳美
潘世林
张荣彬
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Shandong Youyan Aisi Semiconductor Material Co ltd
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Shandong Youyan Aisi Semiconductor Material Co ltd
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Priority to CN202310890445.0A priority Critical patent/CN116631848A/en
Publication of CN116631848A publication Critical patent/CN116631848A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to the technical field of semiconductors, in particular to a cleaning method of a silicon wafer for improving the quality of metal and particles on the surface of a silicon polishing sheet. At least comprises the following steps: cleaning the silicon wafer by adopting SC1 cleaning liquid; flushing with ultrapure water; cleaning the silicon wafer by adopting SC2 cleaning liquid; flushing with ultrapure water; cleaning the silicon wafer by adopting SC1 cleaning liquid added with a chelating agent; flushing with ultrapure water; and (5) drying. The cleaning method can effectively improve the quality of metal and particles on the surface of the silicon polished wafer, improve the surface cleanliness of the silicon polished wafer, and improve the yield of the epitaxy of the subsequent process and the processing of devices. In addition, the cleaning method does not need to modify cleaning equipment, and has the characteristics of simple operation, good cleaning effect and high running stability.

Description

Silicon wafer cleaning method for improving quality of metal and particles on surface of silicon polished wafer
Technical Field
The invention relates to the technical field of semiconductors, in particular to a cleaning method of a silicon wafer for improving the quality of metal and particles on the surface of a silicon polishing sheet.
Background
Semiconductor materials play an extremely important role as the most important basic functional material in IC (Integrated Circuit) technology, while silicon is the most readily available base material for fabricating semiconductor devices, and its application is very widespread. Monocrystalline silicon is used as an epitaxial substrate material, and the surface state of the monocrystalline silicon directly influences the growth of an epitaxial layer, so that the performance of a device is influenced, and therefore, the IC manufacture has higher requirements on the surface characteristics of the silicon wafer. With the increasing precision and complexity of semiconductor device manufacturing process, the requirement for the surface cleanliness of silicon wafers is increasing. The semiconductor silicon wafer is manufactured through a plurality of processing procedures such as single crystal growth, barreling, slicing, grinding, corrosion, polishing, final detection and the like, wherein a cleaning process is involved in a plurality of steps, and the surface cleanliness of the silicon wafer directly influences the surface state of the silicon wafer serving as an epitaxial substrate material. The cleaning of silicon wafers is particularly aimed at removing all sources of contamination, such as particles, metal ions and organics, from the wafer surface.
The conventional RCA cleaning method comprises two cleaning solutions, SC1 is NH 4 OH、H 2 O 2 And H 2 The mixed solution of O, abbreviated as APM, has a general concentration formula of 1:1:5 to 1:2:7, the most suitable cleaning temperature is 50-80 ℃, and the SC-1 has a higher pH value, so that particles and organic matters remained on the surface of the silicon wafer can be effectively removed by an oxidation mechanism; in addition, SC2 is HCl, H 2 O 2 And H 2 The mixed solution of O, abbreviated as HPM, has a general concentration formula of 1:1:6 to 1:2:8, the most suitable cleaning temperature is 50-80 ℃, and SC2 has a lower pH value and can be remained in the deviceThe metal on the surface of the silicon wafer forms soluble substances, so that the effect of removing the surface metal is achieved. The silicon polished wafer cleaned by the SC1 can effectively remove particles and organic matters on the surface of the silicon wafer, but particle contamination can be brought when the silicon polished wafer enters the SC2 for metal removal cleaning, and the surface cleanliness of the silicon wafer is reduced. Therefore, neither SC1 nor SC2 is used as the final cleaning step, particles, organic matters and metals on the surface of the silicon wafer cannot be removed effectively at the same time, and it is difficult to obtain a silicon polished wafer having high surface cleanliness.
Disclosure of Invention
In order to solve the technical problems, the invention provides a cleaning method of a silicon wafer for improving the quality of metal and particles on the surface of a silicon polished wafer, which is used for cleaning the silicon polished wafer.
The invention provides a cleaning method of a silicon wafer for improving the quality of metal and particles on the surface of a silicon polished wafer, which at least comprises the following steps:
s1, cleaning a silicon wafer by adopting an SC1 cleaning solution;
s2, flushing with ultrapure water;
s3, cleaning the silicon wafer by adopting an SC2 cleaning solution;
s4, flushing with ultrapure water;
s5, cleaning the silicon wafer by adopting an SC1 cleaning solution added with a chelating agent;
s6, flushing with ultrapure water;
s7, drying.
Optionally, in S1, the composition of the SC1 cleaning solution is: the volume ratio of the ammonia water to the hydrogen peroxide to the pure water is 1:1:20, a step of; the mass percentage concentration of the ammonia water is 28% -30%, and the mass percentage concentration of the hydrogen peroxide is 30% -32%; the cleaning temperature is 60-70 ℃; the cleaning time is 7-8 min.
Optionally, in S1 and/or S5, megasonics is used while cleaning; and/or the megasonic power is 800-900W.
Optionally, in S3, the composition of the SC2 cleaning solution is: the volume ratio of hydrochloric acid, hydrogen peroxide and pure water is 1:1:7, preparing a base material; the mass percentage concentration of the hydrochloric acid is 36% -38%, and the mass percentage concentration of the hydrogen peroxide is 30% -32%; the cleaning temperature is 60-70 ℃; the cleaning time is 7-8 min.
Optionally, in S5, the composition of the SC1 cleaning solution is: the volume ratio of the ammonia water to the hydrogen peroxide to the pure water is 1:1:20, a step of; the mass percentage concentration of the ammonia water is 28% -30%, and the mass percentage concentration of the hydrogen peroxide is 30% -32%; the mass ratio of the chelating agent to the SC1 cleaning liquid is 1:100; the cleaning temperature is 60-70 ℃; the cleaning time is 7-8 min.
Alternatively, in S5, the chelating agent is selected from the group consisting of nitrilotriacetic acid trisodium salt monohydrate.
Optionally, in S2, S4 and S6, the ultrapure water is used for flushing for 3 times, and the flushing time is 7-8 min.
Optionally, in S7, the cleaned silicon wafer is infrared dried by adopting a hot water slow-lifting mode; the temperature of the hot water is 80-90 ℃, and the pulling speed is 3-4 mm/s.
Optionally, during infrared drying, a negative pressure process is adopted at the bottom of the drying tank.
Alternatively, the negative pressure is 5 bar to 7 bar.
Compared with the prior art, the technical scheme provided by the embodiment of the invention has the following advantages:
the invention provides a cleaning method of a silicon wafer, which can effectively improve the quality of metal and particles on the surface of the silicon polished wafer, improve the surface cleanliness of the silicon polished wafer and improve the yield of post-process epitaxy and device processing. In addition, the cleaning method does not need to modify cleaning equipment, and has the characteristics of simple operation, good cleaning effect and high running stability.
Detailed Description
In order that the above objects, features and advantages of the invention will be more clearly understood, a further description of the invention will be made. It should be noted that, without conflict, the embodiments of the present invention and features in the embodiments may be combined with each other.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced otherwise than as described herein; it will be apparent that the embodiments in the specification are only some, but not all, embodiments of the invention.
The embodiment of the invention provides a silicon wafer cleaning method for improving the surface metal and particle quality of a silicon polishing sheet, which adopts a groove type cleaning machine to clean the silicon wafer, and increases the step of cleaning by adopting SC1 cleaning liquid added with chelating agent, thereby obviously improving the surface metal and particle quality of the silicon polishing sheet. The cleaning method of the silicon wafer at least comprises the following steps:
s1, cleaning a silicon wafer by adopting an SC1 cleaning solution;
s2, flushing with ultrapure water;
s3, cleaning the silicon wafer by adopting an SC2 cleaning solution;
s4, flushing with ultrapure water;
s5, cleaning the silicon wafer by adopting an SC1 cleaning solution added with a chelating agent;
s6, flushing with ultrapure water;
s7, drying.
The silicon polished wafer cleaned by the SC1 cleaning solution can effectively remove particles and organic matters on the surface of the silicon wafer, but particles are polluted when the silicon polished wafer enters the SC2 cleaning solution for metal removal cleaning, so that the surface cleanliness of the silicon wafer is reduced. Therefore, neither the SC1 cleaning solution nor the SC2 cleaning solution is used as the final cleaning step, particles, organic matters and metals on the surface of the silicon wafer can be removed effectively at the same time, and it is difficult to obtain a silicon polished wafer having high surface cleanliness. In view of the innovation of the invention, the SC1 cleaning solution added with the chelating agent is adopted to clean the silicon wafer, thereby simultaneously solving the technical problems of residual particles and metals on the surface of the silicon wafer and effectively improving the quality of the metals and the particles on the surface of the silicon polished wafer.
As a preferred technical solution of the embodiment of the present invention, in S1, the composition of the SC1 cleaning solution is: the volume ratio of the ammonia water to the hydrogen peroxide to the pure water is 0.5-1: 1:10 to 20, further preferably 1:1: 10-20, more preferably 1:1:20. wherein the mass percentage concentration of the ammonia water is 28% -30%, and the mass percentage concentration of the hydrogen peroxide is 30% -32%.
As a preferred technical scheme of the embodiment of the invention, in the cleaning process of S1, the cleaning temperature is 60-70 ℃; the cleaning time is 6-10 min, preferably 7-8 min.
In the S1, the preferred technical solution of the embodiment of the present invention uses a megasonic cleaner to clean the substrate at the same time, so as to improve the cleaning efficiency. The megasonic cleaner is cleaning equipment based on the principle of cleaning silicon wafers by combining the high-frequency (850 kHz) vibration effect with the chemical reaction of chemical cleaning agents, and the applicable power is 600-1200W, preferably 800-900W.
As a preferred technical scheme of the embodiment of the invention, in S2, ultrapure water is used for flushing 3 times in a quick-discharge mode, and the flushing time is 5-9 min, preferably 7 min.
As a preferred technical solution of the embodiment of the present invention, in S3, the composition of the SC2 cleaning solution is: the volume ratio of hydrochloric acid, hydrogen peroxide and pure water is 1:1: 5-10, preferably 1:1:6 to 8, more preferably 1:1:7, preparing a base material; the mass percentage concentration of the hydrochloric acid is 36% -38%, and the mass percentage concentration of the hydrogen peroxide is 30% -32%.
As a preferred technical scheme of the embodiment of the invention, in the cleaning process of S3, the cleaning temperature is 60-70 ℃; the cleaning time is 6-10 min, preferably 7-8 min.
As a preferred technical scheme of the embodiment of the invention, in S4, the ultra-pure water is used for flushing for 3 times, and the flushing time is 5-9 min, preferably 7-8 min.
In S5, in the SC1 cleaning solution (hereinafter referred to as mixed cleaning solution) added with the chelating agent, the composition of the SC1 cleaning solution is the same as that in S1, and the volume ratio of ammonia water, hydrogen peroxide and pure water is 0.5-1: 1: 10-20 parts of a base; further preferably 1:1: 10-20, more preferably 1:1:20. wherein the mass percentage concentration of the ammonia water is 28% -30%, and the mass percentage concentration of the hydrogen peroxide is 30% -32%. The chelating agent is selected from nitrilotriacetic acid trisodium salt monohydrate. According to the embodiment of the invention, through screening, particles, organic matters and metals on the surface of the silicon wafer can be effectively removed by selecting the chelating agent, and compared with other chelating agents (such as EDTA disodium and the like), the chelating agent has better cleaning effect.
Wherein, the mass ratio of the chelating agent to the SC1 cleaning liquid is 1: 50-200, preferably 1: 80-160, more preferably 1:100.
as a preferred technical scheme of the embodiment of the invention, in the cleaning process of S5, the cleaning temperature is 60-70 ℃; the cleaning time is 6-10 min, preferably 7-8 min.
As a preferable technical scheme of the embodiment of the invention, in S6, the ultra-pure water is used for flushing for 3 times, and the flushing time is 5-9 min, preferably 7-8 min.
In S7, the cleaned silicon wafer is infrared dried by adopting a hot water slow-pull method. The lifting speed is 3-4 mm/s; the temperature of the hot water is 50-90 ℃, preferably 80-90 ℃. Because the silicon wafer is dehydrated after being slowly pulled by hot water, the temperature is not required to be too high in infrared drying, and the temperature is maintained at 45-50 ℃.
In S7, in order to avoid that the bottom of the drying tank is not dried in time, and residual water stains are caused on part of the silicon wafer, so that metal and particles are increased, and negative pressure is adopted at the bottom of the drying tank. The negative pressure is 3 bar to 8 bar, preferably 5 bar to 7 bar.
The invention is further illustrated by the following specific examples, which are not meant to limit the scope of the invention.
All reagents used in the examples of the present invention were commercially available, and nitrilotriacetic acid trisodium salt monohydrate was purchased from FlexaTrac ™ -NTA. The model of the cleaning machine is an APS trough type cleaning machine.
Example 1
Experimental silicon wafer: a total of 3 groups of 12 inch lightly boron doped silicon polished tiles, 100 tiles each.
Auxiliary materials: ammonia water (the mass percentage concentration is 28% -30%), hydrogen peroxide (the mass percentage concentration is 30% -32%), hydrochloric acid, chelating agent, pure water (the resistivity is more than 18M ohm cm) and the like.
The cleaning machine carries out full-automatic liquid preparation and temperature rise according to the parameter requirements set by the cleaning program, wherein,
the mixture ratio of the SC1 cleaning agent is NH 4 OH：H 2 O 2 ：H 2 O=1: 1:20, the cleaning temperature is 65+/-5 ℃;
the mixture ratio of the SC2 cleaning agent is HCl: h 2 O 2 ：H 2 O=1: 1:7, cleaning at 65+/-5 ℃;
in the mixed cleaning solution, the mixture ratio of SC1 is NH 4 OH：H 2 O 2 ：H 2 O=1: 1:20, the mass ratio of nitrilotriacetic acid trisodium salt monohydrate to SC1 is 1:100, the cleaning temperature is 65+/-5 ℃.
1. The cleaning method of the experimental group 1 is as follows:
pouring a first group of silicon polished wafers (100 wafers in total) into a cleaning flower basket and respectively placing the cleaning flower basket on a feeding table of a cleaning machine, and cleaning according to the following procedures:
s1, cleaning the SC1 cleaning solution for 7 min at the cleaning temperature of 65+/-5 ℃ and simultaneously applying megasonic 800W;
s2, flushing with ultrapure water for 3 times, wherein the time is 7 min, and the quick discharging times are 3 times;
s3, cleaning the SC2 cleaning solution for 7 min, wherein the cleaning temperature is 65+/-5 ℃;
s4, flushing with ultrapure water for 3 times, wherein the time is 7 min, and the quick discharging times are 3 times;
s5, cleaning for 8 min by mixing the cleaning liquid, wherein the cleaning temperature is 65+/-5 ℃, and megasonic 800 and W are applied simultaneously;
s6, flushing with ultrapure water for 3 times, wherein the time is 7 min, and the quick discharging times are 3 times;
s7, slowly lifting and infrared drying with hot water, wherein the temperature of the hot water is 80 ℃, the lifting speed is 4 mm/S, and the negative pressure is 5 bar.
2. The cleaning method of the comparative group 1 is as follows:
pouring a second group of silicon polished wafers (100 wafers in total) into a cleaning flower basket and respectively placing the cleaning flower basket on a feeding table of a cleaning machine, and cleaning according to the following procedures:
s1, cleaning the SC1 cleaning solution for 8 min at the cleaning temperature of 65+/-5 ℃ and simultaneously applying megasonic 800W;
s2, flushing with ultrapure water for 7 min, and rapidly discharging for 3 times;
s3, cleaning the SC1 cleaning solution for 8 min at the cleaning temperature of 65+/-5 ℃ and simultaneously applying megasonic 800W;
s4, flushing with ultrapure water for 7 min, and rapidly discharging for 3 times;
s5, cleaning SC2 for 8 min; the cleaning temperature is 65+/-5 ℃;
s6, flushing with ultrapure water for 7 min, and rapidly discharging for 3 times;
s7, hot water is slowly pulled and is subjected to infrared drying, the temperature of the hot water is 80 ℃, the pulling speed is 4 mm/S, the temperature of the infrared drying is 45-50 ℃, and the film is dried and put into a film box.
3. The cleaning method of the comparative group 2 is as follows:
pouring a third group of silicon polished sheets (100 sheets in total) into a cleaning flower basket and respectively placing the cleaning flower basket on a feeding table of a cleaning machine, wherein the cleaning method is the same as that of the comparison group 1, and the difference is that:
s7, slowly pulling the infrared drying, wherein the pulling speed is 4 mm/S, the temperature of the infrared drying is 45-50 ℃, and the negative pressure is 5 bar.
After the three groups of silicon polishing and cleaning are completed, the SP5 is used for sequentially testing the surface particles of the two groups of silicon polishing sheets, 5 pieces are randomly extracted from the two groups of silicon polishing sheets respectively, the ICP-MS is used for testing the surface metals, and the obtained experimental data are shown in the table 1 and the table 2:
TABLE 1
Table 2: units: e9 [ atoms/cm 2 ]
According to the experimental results of table 1, compared with the silicon polished wafer cleaned by the original cleaning process, the bright point defect LPD (Light Point Defet) is significantly reduced, which indicates that the particle level is significantly improved.
From the experimental results of table 2, it can be seen that the metal level of the silicon polishing pad cleaned by the cleaning method of the present invention is comparable to that of the conventional method, compared with the silicon polishing pad cleaned by the original cleaning process, indicating that no new metal contamination is introduced.
The above experimental data demonstrate that the cleaning method of the present invention can improve the quality of metal and particles on the surface of a silicon polishing sheet.
Example 2
Experimental silicon wafer: a total of 3 groups of 12 inch lightly boron doped silicon polished tiles, 100 tiles each.
The experimental materials were the same as in example 1.
1. Cleaning method of experimental group 1 (total 100 pieces): as in example 1;
2. cleaning method of experimental group 2 (total 100 pieces): steps 1 to 6 are the same as in example 1 except that the common drying method is adopted in step S7.
3. Cleaning method of experimental group 3 (total 100 pieces): the difference is that in S7, slow-pulling infrared drying and normal pressure are adopted in the method of example 1.
The experimental data obtained are shown in tables 3 and 4:
TABLE 3 Table 3
Table 4: units: e9 [ atoms/cm 2 ]
According to the experimental results of table 3, compared with the silicon polished wafer cleaned by the original cleaning process, the bright point defect LPD (Light Point Defet) is significantly reduced, which indicates that the particle level is significantly improved.
From the experimental results of table 4, it can be seen that the metal level of the silicon polishing pad washed by the washing method of the present invention is comparable to that of the conventional method, compared with the silicon polishing pad washed by the original washing process, indicating that no new metal contamination is introduced.
The above experimental data demonstrate that the cleaning method of the present invention can improve the quality of metal and particles on the surface of a silicon polishing sheet.
The foregoing is only a specific embodiment of the invention to enable those skilled in the art to understand or practice the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown and described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. A cleaning method for a silicon wafer for improving the quality of metal and particles on the surface of a silicon polished wafer is characterized by at least comprising the following steps:
s1, cleaning a silicon wafer by adopting an SC1 cleaning solution;
s2, flushing with ultrapure water;
s3, cleaning the silicon wafer by adopting an SC2 cleaning solution;
s4, flushing with ultrapure water;
s5, cleaning the silicon wafer by adopting an SC1 cleaning solution added with a chelating agent;
s6, flushing with ultrapure water;
s7, drying.
2. The cleaning method according to claim 1, wherein in S1, the SC1 cleaning liquid has a composition of: the volume ratio of the ammonia water to the hydrogen peroxide to the pure water is 1:1:20, a step of; the mass percentage concentration of the ammonia water is 28% -30%, and the mass percentage concentration of the hydrogen peroxide is 30% -32%;
the cleaning temperature is 60-70 ℃; the cleaning time is 7-8 min.
3. The cleaning method according to claim 1, wherein in S1 and/or S5, megasonics is used simultaneously with the cleaning; and/or the megasonic power is 800-900W.
4. The cleaning method according to claim 1, wherein in S3, the SC2 cleaning liquid has a composition of: the volume ratio of hydrochloric acid, hydrogen peroxide and pure water is 1:1:7, preparing a base material; the mass percentage concentration of the hydrochloric acid is 36% -38%, and the mass percentage concentration of the hydrogen peroxide is 30% -32%;
the cleaning temperature is 60-70 ℃; the cleaning time is 7-8 min.
5. The method of cleaning according to claim 1, wherein, in S5,
in the SC1 cleaning solution added with the chelating agent, the composition of the SC1 cleaning solution is as follows: the volume ratio of the ammonia water to the hydrogen peroxide to the pure water is 1:1:20, a step of; the mass percentage concentration of the ammonia water is 28% -30%, and the mass percentage concentration of the hydrogen peroxide is 30% -32%; the mass ratio of the chelating agent to the SC1 cleaning solution is 1:100;
the cleaning temperature is 60-70 ℃; the cleaning time is 7-8 min.
6. The method of claim 1 or 5, wherein in S5 the chelating agent is selected from the group consisting of nitrilotriacetic acid trisodium salt monohydrate.
7. The method according to claim 1, wherein the rinsing is performed 3 times with ultrapure water for 7 to 8 minutes in S2, S4 and S6.
8. The method according to claim 1, wherein in S7, the cleaned silicon wafer is infrared dried by using a hot water slow-pull method;
the temperature of the hot water is 80-90 ℃, and the pulling speed is 3-4 mm/s.
9. The method according to claim 8, wherein the bottom of the drying tank is subjected to a negative pressure process during the infrared drying.
10. The cleaning method according to claim 9, wherein the negative pressure is 5 bar to 7 bar.
CN202310890445.0A 2023-07-20 2023-07-20 Silicon wafer cleaning method for improving quality of metal and particles on surface of silicon polished wafer Pending CN116631848A (en)

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