CN112965184A - Novel silicon optical module - Google Patents
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- CN112965184A CN112965184A CN202110264669.1A CN202110264669A CN112965184A CN 112965184 A CN112965184 A CN 112965184A CN 202110264669 A CN202110264669 A CN 202110264669A CN 112965184 A CN112965184 A CN 112965184A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 220
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 102
- 239000010703 silicon Substances 0.000 title claims abstract description 102
- 238000012545 processing Methods 0.000 claims abstract description 19
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 239000013307 optical fiber Substances 0.000 claims description 26
- 230000000712 assembly Effects 0.000 claims description 9
- 238000000429 assembly Methods 0.000 claims description 9
- 239000002775 capsule Substances 0.000 claims description 2
- 238000013461 design Methods 0.000 abstract description 5
- 230000017525 heat dissipation Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 238000004891 communication Methods 0.000 abstract description 4
- 238000011161 development Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000002349 favourable effect Effects 0.000 abstract description 2
- 239000000835 fiber Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
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- 239000000463 material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4249—Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
- G02B6/425—Optical features
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4266—Thermal aspects, temperature control or temperature monitoring
- G02B6/4268—Cooling
- G02B6/4269—Cooling with heat sinks or radiation fins
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention relates to the field of optical communication, in particular to a novel silicon optical module, which comprises: a plurality of laser components which respectively emit laser with a plurality of different wavelengths; a silicon optical chip for generating multi-path modulated optical signals; a wave-combining component for generating a wave-combining optical signal; the wavelength division component receives an external optical signal outside the silicon optical module and performs wavelength division processing to generate a plurality of paths of wavelength division optical signals; and the optical detector assembly is used for performing photoelectric conversion on the multi-channel wave-division optical signal, generating an external electric signal and inputting the external electric signal into the circuit board assembly. The technical scheme of the invention has the beneficial effects that: the utility model provides a novel silicon optical module, through setting up silicon optical chip, a plurality of laser assembly, the ripples subassembly of combining, the component of dividing, photodetector subassembly and circuit board subassembly etc. not only can shorten development cycle based on ripe process design, reduce economic cost, easily mass production can also make the device that generates heat separately overall arrangement based on the decentralized overall arrangement thinking, more is favorable to whole module heat dissipation.
Description
Technical Field
The invention relates to the field of optical communication, in particular to a novel silicon optical module.
Background
With the development of optical communication, the speed and the integration level of an optical module are higher and higher, and accordingly, the heat dissipation requirement of the optical module is also higher and higher. The silicon light has the characteristics of low power consumption and high integration, and the scale commercialization of the silicon light can greatly reduce the cost of an integrated circuit. The adoption of silicon optical chips to realize the photoelectric conversion function has become a mainstream scheme adopted by high-speed optical modules.
In the silicon optical module, a silicon optical chip is arranged on the surface of a circuit board assembly and is electrically connected with the circuit board assembly through routing; the silicon optical chip is provided with an optical port on the surface thereof, and is connected with an optical interface of the optical module through an optical fiber ribbon to realize that an optical signal enters and exits the silicon optical chip.
However, in the existing optical module, the laser box is arranged on the surface of the silicon optical chip, the optical fiber ribbon is coupled with the surface of the silicon optical chip, the laser box and the silicon optical chip are arranged with poor heat dissipation from top to bottom, the optical fiber ribbon needs to adopt 90 ° FA, the parallel single-mode four-channel transmission communication distance is short, and the MPO jumper wire is high in cost, so that the manufacturing process in the prior art is too complex, and the economic cost is very high.
Disclosure of Invention
To solve the problems in the prior art, a novel silicon optical module is provided, which includes:
the laser components are arranged on the circuit board component and are used for respectively emitting laser with various different wavelengths;
the silicon optical chip is arranged on the circuit board assembly, connected with the laser assembly and used for receiving laser and carrying out modulation processing to generate a plurality of paths of modulated optical signals;
the wave combining component is arranged on the circuit board component, is respectively connected with the silicon optical chip and the laser component, and is used for carrying out wave combining processing on a plurality of paths of modulated optical signals to generate a path of wave combining optical signal and output a novel silicon optical module;
the wavelength division component is arranged on the circuit board component and is used for receiving one path of external optical signals of a plurality of wavelength multiplexes outside the novel silicon optical module, performing wavelength division processing on the external optical signals, generating and outputting multiple paths of wavelength division optical signals;
and the optical detector assembly is arranged on the circuit board assembly, is connected with the wavelength division assembly and is used for receiving multiple paths of wavelength division optical signals, carrying out photoelectric conversion on the received signals, generating corresponding external electric signals and inputting the external electric signals into the circuit board assembly.
Preferably, each of the laser assemblies includes:
a laser for emitting laser light;
the lens is used for receiving and converging the laser emitted by the laser;
and the isolator is used for receiving the laser converged by the lens and inputting the laser into the silicon optical chip.
Preferably, each of the laser assemblies further comprises:
an outer capsule for encapsulating the laser, the lens and the isolator.
Preferably, the silicon optical chip includes:
the plurality of input optical ports are used for respectively receiving the laser with various different wavelengths;
the modulator is connected with the input optical ports and used for modulating the laser light of multiple types to generate multiple paths of modulated optical signals;
and the output optical port group is connected with the modulator and is used for outputting the multi-path modulated optical signals to the wave-combining component.
Preferably, the wave combining component comprises:
and the wave combining chip is used for carrying out wave combining processing on the multiple paths of modulated optical signals to generate one path of wave combining optical signal.
The wave combining connection optical fiber is connected with the wave combining chip and used for receiving one path of wave combining optical signal and outputting the wave combining optical signal to the wave combining interface;
and the wave combining interface is connected with the wave combining connection optical fiber and is used for outputting one path of wave combining optical signal to the outside of the novel silicon optical module.
Preferably, the wavelength division assembly includes:
the wavelength division interface is used for receiving external optical signals multiplexed by multiple wavelengths outside the novel silicon optical module;
the wavelength division connection optical fiber is connected with the wavelength division interface and is used for transmitting the external optical signal;
and the wave division chip is connected with the wave division connecting optical fiber and is used for carrying out wave division processing on the external optical signal to generate a plurality of paths of wave division optical signals and inputting the wave division optical signals into the circuit board assembly.
Preferably, the number of the modulated optical signals subjected to the multiplexing processing by the multiplexing component is the same as the number of the demultiplexed optical signals generated by the demultiplexing component.
Preferably, the method further comprises the following steps:
and one end of each connecting optical fiber is coupled with the laser component, and the other end of each connecting optical fiber is coupled with the plurality of input optical ports of the silicon optical chip and is used for transmitting the laser output by the laser component to the silicon optical chip.
Preferably, the circuit board assembly includes thereon:
and the silicon optical chip and the laser component are arranged on the heat sink, and the heat sink is used for dissipating heat of the silicon optical chip and the laser component.
Preferably, the device further comprises an upper shell and a lower shell;
the upper shell and the lower shell are mutually clamped and used for covering the circuit board assembly, the silicon optical chip arranged on the circuit board assembly, the laser assembly, the optical detector assembly, the wave combining assembly and the wave splitting assembly.
The technical scheme of the invention has the beneficial effects that: the invention provides a novel silicon optical module, which is provided with a silicon optical chip, a plurality of laser assemblies, a wave combination assembly, a wave division assembly, an optical detector assembly, a circuit board assembly and the like, so that the development period can be shortened based on mature process design, the economic cost is reduced, the mass production is easy, heating devices can be separately arranged based on a decentralized arrangement thought, and the heat dissipation of the whole module is facilitated.
Drawings
Fig. 1 is a schematic diagram illustrating an overall structure of a novel silicon optical module according to a preferred embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a silicon optical chip according to a preferred embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a novel silicon optical module with the housing removed according to a preferred embodiment of the present invention;
fig. 4 is a schematic structural diagram of a novel silicon optical module with a housing removed according to another preferred embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
The novel silicon optical module suitable for the 400G FR4 optical module provided by the invention can be shown in figure 1 and comprises the following components: the device comprises a shell 10, a silicon optical chip 20, four laser assemblies 30, a wave combination assembly 40, a wave division assembly 50, a light detector assembly 60 and a circuit board assembly 70.
The signal transmission and position distribution among the silicon optical chip 20, the four laser assemblies 30, the wave combination assembly 40, the wave division assembly 50, and the optical detector assembly 60 can be as follows:
four laser assemblies 30, arranged on the circuit board assembly 70, for emitting four kinds of laser with different wavelengths respectively;
a silicon optical chip 20, disposed on the circuit board assembly 70 and connected to the laser assembly 30, for receiving laser and performing modulation processing to generate four paths of modulated optical signals;
the wave combining component 40 is arranged on the circuit board component 70, is respectively connected with the silicon optical chip 20 and the laser component 30, and is used for carrying out wave combining processing on the four paths of modulated optical signals to generate one path of wave combining optical signal and output a novel silicon optical module;
the wavelength division component 50 is arranged on the circuit board component 70 and is used for receiving one path of external optical signals with multiple wavelengths multiplexed outside the novel silicon optical module, performing wavelength division processing on the one path of external optical signals, generating four paths of wavelength division optical signals and outputting the four paths of wavelength division optical signals;
and the optical detector assembly 60 is arranged on the circuit board assembly 70, is connected with the wavelength division assembly 50, and is used for receiving the four paths of wavelength division optical signals, performing photoelectric conversion on the four paths of wavelength division optical signals, generating corresponding external electric signals and inputting the external electric signals into the circuit board assembly 70.
As can be seen in fig. 3, in a preferred embodiment of the present invention, each laser assembly 30 comprises:
a laser 301 for emitting laser light;
a lens 302 for receiving and converging the laser light emitted by the laser 301;
and an isolator 303 for receiving the laser light converged by the lens 302 and inputting the laser light to the silicon optical chip 20.
The novel silicon optical module provided by the invention comprises four laser components 30, each laser component 30 mainly comprises a laser 301, a lens 302 and an isolator 303, and further, in the actual setting, devices such as a coupling lens, a backlight detector and the like can be added according to the requirements. The four laser assemblies 30 can respectively emit laser light with 4 wavelengths, which can be respectively denoted as λ 1, λ 2, λ 3, and λ 4. The lasers with four wavelengths are converged by the lens 302, the converged lasers pass through the isolator 303, and the converged lasers enter the silicon optical chip 20.
As can be seen in fig. 3, in a preferred embodiment of the present invention, each laser assembly 30 further comprises:
an outer envelope 304, the outer envelope 304 being adapted to enclose the laser 301, the lens 302 and the isolator 303.
In particular, the laser 301, the lens 302, and the isolator 303 are encapsulated inside an outer enclosure 304, which outer enclosure 304 may be a hermetic package that may improve the reliability of the laser assembly 30. The laser assembly 30 may be packaged by a conventional TO technology, such as TO56, TO38 or TO33 standard packages, or may be packaged in a non-standard Mini TO form, or, of course, the four laser assemblies 30 may be further packaged in an integrated manner.
As shown in fig. 2, in a preferred embodiment of the present invention, the silicon microchip 20 includes:
four input ports 2011, 2012, 2013 and 2014 for respectively receiving the laser light with four different wavelengths;
four modulators 202 connected to the four input ports 2011, 2012, 2013, 2014, and configured to perform modulation processing on the four lasers to generate four paths of modulated optical signals;
an output optical port set 203 connected to the modulator 202 for outputting the four-path modulated optical signals to the multiplexer 40.
Specifically, the input ports 2011, 2012, 2013 and 2014 may be respectively disposed on two sides of the output port group 203, and accordingly, may be designed in other layouts. Further, the output light port group 203 is provided with four output light ports.
Based on the above description, the four laser beams with different wavelengths can enter the silicon optical chip 20 through the input ports 2011, 2012, 2013 and 2014, respectively. The laser light with four wavelengths enters the silicon optical chip 20 and is modulated into four modulated optical signals, and the four modulated optical signals are output from the output optical port group 203 of the silicon optical chip 20.
Further, a plurality of chip electrical ports 204 may be disposed on the other three sides of the silicon optical chip 20, and the chip electrical ports 204 are communicated with the circuit board assembly 70 through conductors, so as to implement mutual transmission, energization and grounding of data signals.
Further, based on the above, the silicon optical chip 20 used in the present invention may be a silicon optical modulator with a Mach-Zehnder structure.
In the present embodiment, the silicon microchip 20 has a rectangular shape, and accordingly, may have another shape.
As shown in fig. 3, in a preferred embodiment of the present invention, the multiplexing assembly 40 includes a multiplexing interface 401, a multiplexing connection fiber 402, and a multiplexing chip 403. The signal transmission and the position distribution among the multiplexing interface 401, the multiplexing connection fiber 402, and the multiplexing chip 403 may be as follows:
the multiplexing chip 403 is configured to perform multiplexing processing on the multiple modulated optical signals to generate a single multiplexed optical signal.
The wave-combining connection optical fiber 402 is connected with the wave-combining chip 403 and used for receiving a wave-combining optical signal and outputting the wave-combining optical signal to the wave-combining interface 401;
and the wave combining interface 401 is connected with the wave combining connection optical fiber 402 and is used for outputting one path of wave combining optical signals to the novel silicon optical module.
Specifically, the wave combining chip 403 of the wave combining component 40 is coupled to the output optical port group 203 of the silicon optical chip 20, four modulated optical signals of the silicon optical chip 20 are output from the output optical port group 203 of the silicon optical chip 20 and enter the wave combining chip 403, the wave combining chip 403 combines the four modulated optical signals into one wave combining optical signal, the one wave combining optical signal after combination is transmitted to the wave combining interface 401 through the wave combining connection optical fiber 402, and the one wave combining optical signal after combination is further output to the external device through the wave combining interface 401.
Furthermore, the multiplexing component adopted by the invention can be a MUX component, and the multiplexing interface can be an LC interface.
As can be seen in fig. 3, in a preferred embodiment of the present invention, the wavelength-splitting assembly 50 includes:
a wavelength division interface 501 for receiving a plurality of wavelength-multiplexed external optical signals outside the novel silicon optical module;
a wavelength division connection optical fiber 502 connected to the wavelength division interface 501 for transmitting external optical signals;
the wavelength division chip 503 is connected to the wavelength division connection optical fiber 502, and is configured to perform wavelength division processing on the external optical signal, generate four paths of wavelength division optical signals, and output the four paths of wavelength division optical signals to the circuit board assembly 70.
In a preferred embodiment of the present invention, the number of modulated optical signals subjected to multiplexing by the multiplexing unit 40 is the same as the number of demultiplexed optical signals generated by the demultiplexing unit 50.
Specifically, the wavelength division chip 503 is coupled to the optical detector assembly 60, a plurality of wavelength-multiplexed optical signals of the external device may be input to the wavelength division interface 501, the plurality of wavelength-multiplexed optical signals are transmitted to the wavelength division chip 503 through the wavelength division connecting optical fiber 502, the wavelength division chip 503 divides the plurality of wavelength-multiplexed optical signals into four wavelength-divided optical signals, the four wavelength-divided optical signals are further transmitted to the optical detector assembly 60, and the optical detector assembly 60 converts the received optical signals into electrical signals and inputs the electrical signals to the circuit board assembly 70.
Furthermore, the wave-splitting component adopted by the invention can be a DeMUX component, and the wave-splitting interface can also be an LC interface.
In a preferred embodiment of the present invention, the circuit board assembly 70 includes thereon:
and the silicon optical chip 20 and the laser assembly 30 are arranged on the heat sink, and the heat sink is used for dissipating heat of the silicon optical chip 20 and the laser assembly 30.
Specifically, in practical design, the heat sink 701 is preferably made of a material with high thermal conductivity and low expansion coefficient, such as tungsten copper or aluminum nitride. The heat sink 701 is fixed to the circuit board assembly 70 by bonding or soldering. The silicon optical chip 20 and the laser assembly 30 are fixed on the heat sink 701, heat generated by the silicon optical chip 20 and the laser assembly 30 is dissipated through the heat sink 701, and the reverse side of the heat sink 701 is in contact with the shell 10 to further conduct the heat out.
In a preferred embodiment of the present invention, the circuit board assembly 70 further includes:
and the module electric port is used for being electrically connected with equipment outside the novel silicon optical module so as to transmit data.
Further, the circuit board assembly 70 is further provided with Driver, TIA, DSP, MCU, etc. chips and a gold finger, where the gold finger is a module electrical port of the silicon optical module, and the module electrical port can be in circuit connection with an external device, so as to realize functions of mutual transmission of data signals, energization and grounding.
In a preferred embodiment of the present invention, the housing 10 may include an upper housing 101 and a lower housing 102;
the upper housing 101 and the lower housing 102 are engaged with each other to cover the circuit board assembly 70, the silicon optical chip 20 disposed on the circuit board assembly 70, the laser assembly 30, the wavelength multiplexing assembly 40, and the wavelength demultiplexing assembly 50.
As shown in fig. 4, in a preferred embodiment of the present invention, the method further includes:
four connecting optical fibers 80, one end of each connecting optical fiber 80 is coupled to the laser component 30, and the other end of the connecting optical fiber 70 is coupled to the four input ports 2011, 2012, 2013 and 2014 of the silicon optical chip 20, so as to transmit the laser output by the laser component 30 to the silicon optical chip 20.
That is to say, the novel silicon optical module of the present invention may include a housing 10, a silicon optical chip 20, two laser components 30, a wave-combining component 40, a wave-splitting component 50, a photo-detector component 60, a circuit board component 70, and four connecting fibers 80, where the two laser components 30 are respectively coupled to one ends of the two connecting fibers 80, and the other ends of the four connecting fibers 80 are respectively coupled to the four input ports 2011, 2012, 2013, and 2014 of the silicon optical chip 20. The four lasers 301 emit four lasers with different wavelengths, the lasers are converged by the lens 302, the converged lasers pass through the isolator 303, the converged lasers are input to the connecting optical fiber 80, and the lasers enter the silicon optical chip 20 from the four input ports 2011, 2012, 2013 and 2014 through the connecting optical fiber 80. The laser with the same wavelength enters the silicon optical chip 20, and then is branched and modulated to become four paths of modulated optical signals, and the four paths of modulated optical signals are output from the output optical port group 203 of the silicon optical chip 20.
Based on the above, the invention can provide a silicon optical chip which can adopt a mature process design, has a short development period and is easy for mass production. The laser component, the circuit board and the related photoelectric components can be designed and selected in a domestic supply chain, so that the cost of the whole module is greatly reduced, and the novel silicon optical module structure design adopts a decentralized layout thought, so that heating devices are separately arranged, and the whole module is more favorable for heat dissipation. The novel silicon optical module can be applied to a 400GFR4 optical module.
While the invention has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention.
Claims (10)
1. A novel silicon optical module, comprising:
the laser components are arranged on the circuit board component and are used for respectively emitting laser with various different wavelengths;
the silicon optical chip is arranged on the circuit board assembly, connected with the laser assembly and used for receiving laser and carrying out modulation processing to generate a plurality of paths of modulated optical signals;
the wave combining component is arranged on the circuit board component, is respectively connected with the silicon optical chip and the laser component, and is used for carrying out wave combining processing on a plurality of paths of modulated optical signals to generate a path of wave combining optical signal and output the novel silicon optical module;
the wavelength division component is arranged on the circuit board component and is used for receiving one path of external optical signals of a plurality of wavelength multiplexes outside the novel silicon optical module, performing wavelength division processing on the external optical signals, generating and outputting multiple paths of wavelength division optical signals;
and the optical detector assembly is arranged on the circuit board assembly, is connected with the wavelength division assembly and is used for receiving multiple paths of wavelength division optical signals, carrying out photoelectric conversion on the received signals, generating corresponding external electric signals and inputting the external electric signals into the circuit board assembly.
2. The novel silicon optical module as claimed in claim 1, wherein each of said laser assemblies comprises:
a laser for emitting laser light;
the lens is used for receiving and converging the laser emitted by the laser;
and the isolator is used for receiving the laser converged by the lens and inputting the laser into the silicon optical chip.
3. The novel silicon optical module as claimed in claim 2, wherein each said laser assembly further comprises:
an outer capsule for encapsulating the laser, the lens and the isolator.
4. The novel silicon optical module as claimed in claim 1, wherein the silicon optical chip comprises:
the plurality of input optical ports are used for respectively receiving the laser with various different wavelengths;
the modulator is connected with the input optical ports and used for modulating the laser light of multiple types to generate multiple paths of modulated optical signals;
and the output optical port group is connected with the modulator and is used for outputting the multi-path modulated optical signals to the wave-combining component.
5. The novel silicon optical module as claimed in claim 1, wherein the wave-combining component comprises:
and the wave combining chip is used for carrying out wave combining processing on the multiple paths of modulated optical signals to generate one path of wave combining optical signal.
The wave combining connection optical fiber is connected with the wave combining chip and used for receiving one path of wave combining optical signal and outputting the wave combining optical signal to the wave combining interface;
and the wave combining interface is connected with the wave combining connection optical fiber and is used for outputting one path of wave combining optical signal to the novel silicon optical module.
6. The novel silicon optical module as claimed in claim 1, wherein the wavelength-division assembly comprises:
the wavelength division interface is used for receiving external optical signals multiplexed by multiple wavelengths outside the novel silicon optical module;
the wavelength division connection optical fiber is connected with the wavelength division interface and is used for transmitting the external optical signal;
and the wave division chip is connected with the wave division connecting optical fiber and is used for carrying out wave division processing on the external optical signal to generate a plurality of paths of wave division optical signals and inputting the wave division optical signals into the circuit board assembly.
7. The novel silicon optical module according to claim 1, wherein the number of the modulated optical signals subjected to the multiplexing processing by the multiplexing component is the same as the number of the optical signals generated by the demultiplexing component.
8. The novel silicon optical module as claimed in claim 1, further comprising:
and one end of each connecting optical fiber is coupled with the laser component, and the other end of each connecting optical fiber is coupled with the plurality of input optical ports of the silicon optical chip and is used for transmitting the laser output by the laser component to the silicon optical chip.
9. The novel silicon optical module as claimed in claim 1, wherein the circuit board assembly comprises thereon:
and the silicon optical chip and the laser component are arranged on the heat sink, and the heat sink is used for dissipating heat of the silicon optical chip and the laser component.
10. The novel silicon optical module as claimed in claim 1, further comprising an upper housing and a lower housing;
the upper shell and the lower shell are mutually clamped and used for covering the circuit board assembly, the silicon optical chip arranged on the circuit board assembly, the laser assembly, the optical detector assembly, the wave combining assembly and the wave splitting assembly.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114721095A (en) * | 2022-04-07 | 2022-07-08 | 深圳市易飞扬通信技术有限公司 | Packaging method of light emitting module and light emitting module |
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| CN110376688A (en) * | 2019-07-16 | 2019-10-25 | 武汉光迅科技股份有限公司 | A kind of optical module |
| CN111474644A (en) * | 2020-05-13 | 2020-07-31 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN212649474U (en) * | 2020-08-18 | 2021-03-02 | 青岛海信宽带多媒体技术有限公司 | Optical module |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114721095A (en) * | 2022-04-07 | 2022-07-08 | 深圳市易飞扬通信技术有限公司 | Packaging method of light emitting module and light emitting module |
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