CN112953397A - Terahertz broadband adds bias frequency doubler - Google Patents
Terahertz broadband adds bias frequency doubler Download PDFInfo
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- CN112953397A CN112953397A CN202110099127.3A CN202110099127A CN112953397A CN 112953397 A CN112953397 A CN 112953397A CN 202110099127 A CN202110099127 A CN 202110099127A CN 112953397 A CN112953397 A CN 112953397A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
- H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
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Abstract
The invention discloses a terahertz broadband biased frequency doubler, which belongs to the technical field of terahertz and comprises an upper cavity, a lower cavity and a frequency doubling circuit, wherein a direct current input port is arranged on the lower cavity, the upper cavity comprises an upper input waveguide component, an upper output waveguide component, an upper input equal-height gradient waveguide component and an upper output equal-height gradient waveguide component, and the lower cavity comprises a lower input waveguide component, a lower output waveguide component, a lower input equal-height gradient waveguide component, a lower output equal-height gradient waveguide component and a suspended microstrip air cavity structure. The invention improves the reliability and stability of the frequency multiplier by using a novel suspension microstrip structure; the Schottky diode is matched by using the high-low impedance microstrip line, and the local oscillator low-pass filter is designed by using the high-low impedance microstrip line, so that the design method of the frequency multiplier is simplified; the frequency doubling circuit and the bias feed low-pass filter circuit are integrated on one quartz substrate, so that the problems of high machining difficulty and high assembly difficulty are solved.
Description
Technical Field
The invention relates to the technical field of terahertz, in particular to a terahertz broadband biased frequency doubler.
Background
In recent years, terahertz technology is more and more widely applied to the fields of security inspection, security protection, nondestructive testing and the like, researches on core devices of terahertz frequency bands, such as a mixer, a frequency multiplier and other modules, are rapidly developed, and terahertz frequency multipliers are widely applied to terahertz frequency sources and terahertz transmission links. The traditional terahertz frequency multiplier has the following defects in design: (1) the suspended microstrip cavity structure is shown in fig. 2, two ends of the frequency doubling circuit are supported by the cavity, and the middle of the frequency doubling circuit is suspended. Because the thickness of the quartz substrate is very small, the suspended part is easy to deform, and the index deviates from the design value. In addition, the suspended structure has low reliability, and the quartz substrate is easy to break due to external force impact. (2) The bias circuit and the frequency multiplier circuit are separately designed and are connected with each other through gold wire bonding. The design method has the advantages of complex circuit structure, high processing difficulty and complex assembly process. Therefore, a terahertz broadband biased frequency doubler is provided.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to solve the problem that the quartz substrate of the frequency doubling circuit is deformed and has low reliability, and meanwhile, the frequency doubling circuit and the bias circuit are integrated on the same quartz substrate, so that the processing difficulty and the processing complexity are reduced, the assembly procedure is simplified, the frequency multiplier not only has higher efficiency, but also has the advantages of wider broadband and good output power flatness, and the terahertz broadband biased frequency doubler is provided.
The invention solves the technical problems by the following technical scheme, and the frequency doubling device comprises an upper cavity, a lower cavity and a frequency doubling circuit, wherein a direct current input port is arranged on the lower cavity, the upper cavity comprises an upper input waveguide component, an upper output waveguide component, an upper input equal-height gradient waveguide component and an upper output equal-height gradient waveguide component, and the lower cavity comprises a lower input waveguide component, a lower output waveguide component, a lower input equal-height gradient waveguide component, a lower output equal-height gradient waveguide component and a suspended micro-strip air cavity structure;
after the upper cavity and the lower cavity are tightly attached, the upper input waveguide assembly and the lower input waveguide assembly form an input waveguide interface of the frequency multiplier, the upper output waveguide assembly and the lower output waveguide assembly form an output waveguide interface of the frequency multiplier, the upper input equal-height gradient waveguide assembly and the lower input equal-height gradient waveguide assembly form an input equal-height gradient waveguide of an input end of the frequency multiplier, the upper output equal-height gradient waveguide assembly and the lower output equal-height gradient waveguide assembly form an output equal-height gradient waveguide of an output end of the frequency multiplier, and the frequency multiplier circuit is arranged in the suspended microstrip air cavity structure.
Furthermore, the frequency doubling circuit comprises a signal output probe, an output signal matching unit, a Schottky diode, an input signal matching unit, a local oscillator low-pass filter, a signal input probe, a bias feed low-pass filter circuit and a quartz substrate, wherein the signal output probe, the output signal matching unit, the input signal matching unit, the local oscillator low-pass filter, the signal input probe and the bias feed low-pass filter circuit are all arranged on the quartz substrate, the quartz substrate is embedded in the suspended microstrip air cavity structure, and the signal output probe, the output signal matching unit, the input signal matching unit, the local oscillator low-pass filter, the signal input probe and the bias feed low-pass filter circuit are sequentially connected.
Furthermore, the signal output probe is connected with the output equal-height gradient waveguide, and the signal input probe is connected with the input equal-height gradient waveguide.
Furthermore, the local oscillator low-pass filter comprises a high-low impedance suspended microstrip line, the passband is DC-200GHz, and the local oscillator low-pass filter is used for preventing the second harmonic signal from passing through and reflecting the second harmonic signal to the signal output probe.
Furthermore, the suspension microstrip air cavity structure is the cross, including basic cavity with span the cavity, basic cavity with span the cavity intercommunication, the inner wall both sides of basic cavity are provided with the metal step, the quartz substrate is located on the metal step, span the cavity with schottky diode's appearance phase-match.
Furthermore, the input signal converts the TE10 mode into a suspended microstrip field mode through the signal input probe, and therefore broadband matching of the input signal is achieved.
Further, the interface form of the input waveguide interface is WR5.1, and the interface form of the output waveguide interface is WR 2.8.
Furthermore, the input frequency band of the frequency multiplier is 155-175 GHz, and the output frequency band is 310-350 GHz.
Furthermore, the transmission directions of the input equal-height gradient waveguide and the output equal-height gradient waveguide of the frequency multiplier are parallel to each other.
Compared with the prior art, the invention has the following advantages: according to the terahertz broadband biased frequency doubler, the novel suspended microstrip structure is used, so that the reliability and the stability of the frequency doubler are improved; the Schottky diode is matched by using the high-low impedance microstrip line, and the local oscillator low-pass filter is designed by using the high-low impedance microstrip line, so that the design method of the frequency multiplier is simplified; the frequency doubling circuit and the bias feed low-pass filter circuit are integrated on one quartz substrate, so that the problems of high machining difficulty and high assembly difficulty are solved, and the frequency doubling circuit and the bias feed low-pass filter circuit are worthy of popularization and application.
Drawings
FIG. 1 is a schematic diagram of a conventional frequency multiplier circuit;
FIG. 2 is a schematic diagram of a cavity of a conventional frequency multiplier suspended microstrip structure;
fig. 3 is a schematic diagram of an overall structure of a terahertz frequency doubler according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of the structure of the upper chamber body in an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a frequency multiplier circuit according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a lower chamber in an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a cavity of a suspended microstrip structure in an embodiment of the present invention.
Detailed Description
The following examples are given for the detailed implementation and specific operation of the present invention, but the scope of the present invention is not limited to the following examples.
The non-balanced frequency doubling scheme based on the Schottky diode has the advantages of simplicity, wide bandwidth, high frequency doubling efficiency and the like. The invention provides a novel frequency doubler, which uses a novel suspension microstrip structure, wherein two ends of a quartz substrate are supported by metal steps, the middle area of the quartz substrate forms the suspension microstrip structure, and a frequency doubling circuit and a bias circuit are integrated on the same quartz substrate, so that the processing difficulty and the assembly difficulty can be reduced. The terahertz frequency doubler provided by the invention solves the problems of low reliability and complex design of a bias circuit.
The structure of the terahertz frequency doubler according to the invention is described in detail below with reference to the accompanying drawings.
The invention provides a terahertz broadband biased frequency doubler, which has an input frequency range of 155-175 GHz, an output frequency range of 310-350 GHz, an input waveguide interface form of a frequency doubler WR5.1 and an output waveguide interface form of WR2.8, wherein the input frequency range of the terahertz frequency doubler is not limited to 155-175 GHz, and the output frequency range of the terahertz frequency doubler is not limited to 310-350 GHz.
As shown in fig. 3, an overall structure diagram of the terahertz frequency doubler of the present invention includes: an upper cavity 1, a lower cavity 2, a dc input port 3 and a frequency doubling circuit 4, wherein the structure of the frequency doubling circuit 4 is shown in fig. 5.
The upper cavity 1 is matched with the lower cavity 2, on one hand, the upper cavity is used for constructing a waveguide transmission line, and on the other hand, the upper cavity is matched with the frequency doubling circuit 4 to form an externally biased frequency doubler.
As shown in fig. 4 to 7, the upper input waveguide assembly 102 in the upper cavity 1 is matched with the lower input waveguide assembly 203 in the lower cavity to form an input waveguide interface of the frequency multiplier, the interface is in the form of WR5.1, and the size of the interface is 1.296mm × 0.648 mm. The upper 103 of the output waveguide assembly in the upper cavity 1 is matched with the lower 202 of the output waveguide assembly in the lower cavity 2 to form an output waveguide interface of the frequency multiplier, the interface is in the form of WR2.8, and the size of the interface is 0.71mm by 0.355mm (the length and the width of a waveguide port). The upper 104 of the input equal-height gradient waveguide assembly in the upper cavity 1 is matched with the lower 205 of the input equal-height gradient waveguide assembly in the lower cavity 2 to form the equal-height gradient waveguide of an input end, and finally, the interface forms WR5.1 and 1.296mm by 0.648mm are gradually changed to form the waveguide port with the size of 1.296mm by 0.27 mm. The upper 103 of the output equal-height gradient waveguide assembly in the upper cavity 1 is matched with the lower 202 of the output equal-height gradient waveguide assembly in the lower cavity 2 to form the equal-height gradient waveguide of an output end, and finally, the interface forms are WR2.8 and 0.71mm 0.355mm, and the size of a waveguide port is gradually changed to 0.56mm 0.28 mm. The equal-height gradual change waveguide is equal in height of an H surface of the waveguide, the size of an E surface of the waveguide is gradually changed, the equal-height gradual change waveguide can effectively reduce waveguide impedance, impedance matching of waveguide-microstrip conversion is facilitated, insertion loss of the waveguide-microstrip conversion is reduced, and bandwidth is increased. The transmission directions of the input waveguide and the output waveguide of the frequency doubler are parallel to each other. The suspended microstrip air cavity structure 206 of the terahertz frequency doubler is similar to a T shape, metal steps 207 on two sides of the cavity are used for supporting a quartz substrate of the frequency doubling circuit 4, and the metal steps 207 are parallel to the quartz substrate. Through using novel suspension microstrip structure, make the firm fixing of quartz substrate on the casing, reduced vibrations and caused the possibility of damage, improved the reliability.
Frequency doubling circuit 4 is assembled on lower cavity 2, includes: a signal output probe 401, an output signal matching unit 402, a Schottky diode 5, an input signal matching unit 403, a local oscillator low-pass filter 404, a signal input probe 405, an offset feed low-pass filter circuit 406 and a quartz substrate, wherein the signal output probe 401, the output signal matching unit 402, the input signal matching unit 403, the local oscillator low-pass filter 404, the signal input probe 405 and the offset feed low-pass filter circuit 406 are all fixedly arranged on the quartz substrate which is embedded in the suspended microstrip air cavity structure 206, and the signal output probe 401, the output signal matching unit 402, the input signal matching unit 403, the local oscillator low-pass filter 404, the signal input probe 405, and the bias feed low-pass filter circuit 406 are sequentially connected, the signal output probe 401 is connected with the end of the output tapered waveguide, and the signal input probe 405 is connected with the end of the input tapered waveguide.
The Schottky diode 5 is reversely buckled on the quartz substrate 4, a middle bonding pad of the Schottky diode 5 is bonded with the microstrip line of the quartz substrate 4 by using conductive adhesive, and bonding pads at two ends of the Schottky diode 5 are interconnected with the lower cavity 2 and bonded by using the conductive adhesive.
The 201 in the lower cavity 2 comprises a direct current input port 3 for installing a feedthrough capacitor, and the feedthrough capacitor is connected with a bias power supply board to provide bias voltage for a frequency doubler. When the upper cavity and the lower cavity are buckled, 101 in the upper cavity 1 is tightly matched with 201 in the lower cavity 2 to form a closed cavity.
The input signal converts the TE10 mode into a suspended microstrip field mode through the signal input probe 405, so as to realize broadband matching of the input signal.
The local oscillator low-pass filter 404 is composed of a high-low impedance suspended microstrip line, the passband is DC-200GHz, second harmonic signals are prevented from passing through, and the second harmonic signals are reflected to the signal output probe 401.
The working principle is as follows: the frequency doubler is a nonlinear device for realizing frequency multiplication conversion, and the output frequency of the frequency doubler is 2 harmonics of the input frequency. When the input fundamental wave excites the Schottky diode 5, each harmonic is generated, and the required harmonic component is extracted through a proper topological structure and a filter circuit, so that the function of frequency doubling is completed.
In summary, the terahertz broadband biased frequency doubler of the embodiment improves the reliability and stability of the frequency doubler by using the novel suspended microstrip structure; the Schottky diode is matched by using the high-low impedance microstrip line, and the local oscillator low-pass filter is designed by using the high-low impedance microstrip line, so that the design method of the frequency multiplier is simplified; the frequency doubling circuit and the bias feed low-pass filter circuit are integrated on one quartz substrate, so that the problems of high machining difficulty and high assembly difficulty are solved, and the frequency doubling circuit and the bias feed low-pass filter circuit are worthy of popularization and application.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (9)
1. The utility model provides a terahertz broadband adds bias frequency doubler which characterized in that: the direct current input port is arranged on the lower cavity, the upper cavity comprises an upper input waveguide assembly, an upper output waveguide assembly, an upper input equal-height gradient waveguide assembly and an upper output equal-height gradient waveguide assembly, and the lower cavity comprises a lower input waveguide assembly, a lower output waveguide assembly, a lower input equal-height gradient waveguide assembly, a lower output equal-height gradient waveguide assembly and a suspended micro-strip air cavity structure;
after the upper cavity and the lower cavity are tightly attached, the upper input waveguide assembly and the lower input waveguide assembly form an input waveguide interface of the frequency multiplier, the upper output waveguide assembly and the lower output waveguide assembly form an output waveguide interface of the frequency multiplier, the upper input equal-height gradient waveguide assembly and the lower input equal-height gradient waveguide assembly form an input equal-height gradient waveguide of an input end of the frequency multiplier, the upper output equal-height gradient waveguide assembly and the lower output equal-height gradient waveguide assembly form an output equal-height gradient waveguide of an output end of the frequency multiplier, and the frequency multiplier circuit is arranged in the suspended microstrip air cavity structure.
2. The terahertz broadband biased frequency doubler according to claim 1, wherein: the frequency doubling circuit comprises a signal output probe, an output signal matching unit, a Schottky diode, an input signal matching unit, a local oscillator low-pass filter, a signal input probe, a bias feed low-pass filter circuit and a quartz substrate, wherein the signal output probe, the output signal matching unit, the input signal matching unit, the local oscillator low-pass filter, the signal input probe and the bias feed low-pass filter circuit are all arranged on the quartz substrate, the quartz substrate is embedded in the suspended microstrip air cavity structure, and the signal output probe, the output signal matching unit, the input signal matching unit, the local oscillator low-pass filter, the signal input probe and the bias feed low-pass filter circuit are sequentially connected.
3. The terahertz broadband biased frequency doubler according to claim 2, wherein: the signal output probe is connected with the output equal-height gradient waveguide, and the signal input probe is connected with the input equal-height gradient waveguide.
4. The terahertz broadband biased frequency doubler according to claim 3, wherein: the local oscillator low-pass filter comprises a high-low impedance suspension microstrip line, the passband is DC-200GHz, and the local oscillator low-pass filter is used for preventing a second harmonic signal from passing through and reflecting the second harmonic signal to the signal output probe.
5. The terahertz broadband biased frequency doubler according to claim 4, wherein: the suspension microstrip air cavity structure is the cross, including basic cavity and span cavity, basic cavity with span the cavity intercommunication, the inner wall both sides of basic cavity are provided with the metal step, the quartz substrate is located on the metal step, span the cavity with schottky diode's appearance phase-match.
6. The terahertz broadband biased frequency doubler according to claim 5, wherein: the input signal converts the TE10 mode into a suspended microstrip field mode through the signal input probe, and the broadband matching of the input signal is realized.
7. The terahertz broadband biased frequency doubler according to claim 6, wherein: the interface form of the input waveguide interface is WR5.1, and the interface form of the output waveguide interface is WR 2.8.
8. The terahertz broadband biased frequency doubler according to claim 7, wherein: the input frequency band of the frequency multiplier is 155-175 GHz, and the output frequency band of the frequency multiplier is 310-350 GHz.
9. The terahertz broadband biased frequency doubler according to claim 8, wherein: the transmission directions of the input equal-height gradient waveguide and the output equal-height gradient waveguide of the frequency multiplier are parallel to each other.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105281670A (en) * | 2015-11-11 | 2016-01-27 | 中国电子科技集团公司第四十一研究所 | 220GHz-325GHz applied bias broadband efficient secondary frequency multiplication |
| CN106301226A (en) * | 2016-08-18 | 2017-01-04 | 中国工程物理研究院电子工程研究所 | The Terahertz doubler that a kind of microstrip line combines with suspended mictrostrip |
| CN107689776A (en) * | 2017-07-10 | 2018-02-13 | 中国电子科技集团公司第十三研究所 | Terahertz frequency multiplier |
| CN110739913A (en) * | 2019-06-13 | 2020-01-31 | 中国工程物理研究院电子工程研究所 | ultra wide band schottky frequency doubler structure of second harmonic enhancement mode |
| CN112019165A (en) * | 2020-08-27 | 2020-12-01 | 中电科仪器仪表有限公司 | Terahertz broadband frequency doubling circuit based on pump stray high suppression and frequency doubler |
-
2021
- 2021-01-25 CN CN202110099127.3A patent/CN112953397A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105281670A (en) * | 2015-11-11 | 2016-01-27 | 中国电子科技集团公司第四十一研究所 | 220GHz-325GHz applied bias broadband efficient secondary frequency multiplication |
| CN106301226A (en) * | 2016-08-18 | 2017-01-04 | 中国工程物理研究院电子工程研究所 | The Terahertz doubler that a kind of microstrip line combines with suspended mictrostrip |
| CN107689776A (en) * | 2017-07-10 | 2018-02-13 | 中国电子科技集团公司第十三研究所 | Terahertz frequency multiplier |
| CN110739913A (en) * | 2019-06-13 | 2020-01-31 | 中国工程物理研究院电子工程研究所 | ultra wide band schottky frequency doubler structure of second harmonic enhancement mode |
| CN112019165A (en) * | 2020-08-27 | 2020-12-01 | 中电科仪器仪表有限公司 | Terahertz broadband frequency doubling circuit based on pump stray high suppression and frequency doubler |
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