CN112951785A - 半导体夹片以及相关方法 - Google Patents
半导体夹片以及相关方法 Download PDFInfo
- Publication number
- CN112951785A CN112951785A CN202011337206.5A CN202011337206A CN112951785A CN 112951785 A CN112951785 A CN 112951785A CN 202011337206 A CN202011337206 A CN 202011337206A CN 112951785 A CN112951785 A CN 112951785A
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- clip
- coupled
- die
- wire
- lead
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000005452 bending Methods 0.000 claims description 3
- 238000004049 embossing Methods 0.000 claims description 3
- 238000009966 trimming Methods 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 description 21
- 238000000465 moulding Methods 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000005056 compaction Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- ONBQEOIKXPHGMB-VBSBHUPXSA-N 1-[2-[(2s,3r,4s,5r)-3,4-dihydroxy-5-(hydroxymethyl)oxolan-2-yl]oxy-4,6-dihydroxyphenyl]-3-(4-hydroxyphenyl)propan-1-one Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1OC1=CC(O)=CC(O)=C1C(=O)CCC1=CC=C(O)C=C1 ONBQEOIKXPHGMB-VBSBHUPXSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229940126142 compound 16 Drugs 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- YJLIKUSWRSEPSM-WGQQHEPDSA-N (2r,3r,4s,5r)-2-[6-amino-8-[(4-phenylphenyl)methylamino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1CNC1=NC=2C(N)=NC=NC=2N1[C@@H]1O[C@H](CO)[C@@H](O)[C@H]1O YJLIKUSWRSEPSM-WGQQHEPDSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 229920006336 epoxy molding compound Polymers 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
本发明题为“半导体夹片以及相关方法”。半导体夹片的实施方式可包括:耦接到阶梯部分的管芯附接部分;直接耦接到阶梯部分的引线附接部分;直接耦接到引线附接部分的第一侧面的第一对准特征部;和直接耦接到引线附接部分的第二侧面的第二对准特征部。第二侧面可与第一侧面相背对。引线附接部分可位于与由管芯附接部分形成的平面基本上平行的平面中。
Description
技术领域
本文档的各方面整体涉及利用夹片电连接到器件的半导体封装件。更具体的实施方式涉及用于管芯的含夹片的半导体封装件。
背景技术
夹片(通常为铜)用于半导体封装件中以在半导体封装件中提供电连接。夹片用作引线接合的替代形式。夹片也可用于改善半导体封装件的热性能。
发明内容
半导体夹片的实施方式可包括:耦接到阶梯部分的管芯附接部分;直接耦接到阶梯部分的引线附接部分;直接耦接到引线附接部分的第一侧面的第一对准特征部;和直接耦接到引线附接部分的第二侧面的第二对准特征部。第二侧面可与第一侧面相背对。引线附接部分可位于与由管芯附接部分形成的平面基本上平行的平面中。
半导体夹片的实施方式可包括以下各项中的一项、全部或任一项:
整个引线附接部分可以是平面的。
管芯附接部分可包括穿过其的一个或多个开口。
第一对准特征部和第二对准特征部可从引线附接部分基本上垂直地延伸。
半导体封装件的实施方式可包括:耦接在引线框上方的管芯;包括两个开口或两个凹口中的一者的引线;和夹片。夹片可包括:耦接到引线附接部分的管芯附接部分;耦接到引线附接部分的第一侧面的第一对准特征部;和耦接到引线附接部分的第二侧面的第二对准特征部。第二侧面可与第一侧面相背对。管芯附接部分可耦接在管芯上方。引线附接部分可耦接在引线上方。第一对准特征部和第二对准特征部可耦接在两个开口或两个凹口中的一者内。
半导体封装件的实施方式可包括以下各项中的一项、全部或任一项:
引线附接部分可以是平面的。
半导体封装件可包括耦接在夹片和引线框上方的模塑料。
引线可包括被配置为耦接到夹片的引线的侧面中的多个沟槽。
引线可包括在其中的一个或多个凹陷部。
引线附接部分可位于与由管芯附接部分形成的第二平面基本上平行的第一平面中。
第一对准特征部和第二对准特征部可从引线附接部分基本上垂直地延伸。
管芯可包括碳化硅。
引线附接部分可通过超声夹片焊接焊接到引线。
半导体封装件可包括接合到管芯和第二引线的焊丝。
形成半导体封装件的方法的实施方式可包括:压印包括夹片的框架;修剪耦接到夹片的两个或更多个连杆,以将夹片与框架分离;通过使两个或更多个连杆的一部分基本上垂直于夹片的引线附接部分的平面弯曲来形成两个或更多个对准特征部;以及将夹片耦接在管芯上方以及引线上方。
形成半导体封装件的方法的实施方式可包括以下各项中的一项、全部或任一项:
该方法可包括将两个或更多个对准特征部插入引线中的两个凹口或两个开口中的一者中,以及将夹片接合到管芯和引线。
将夹片接合到引线可包括使用超声压制工具将夹片焊接到引线。
该方法可包括压印框架不超过单次。
该方法可包括在夹片和引线上方施加模塑料。
夹片的引线附接部分可位于与由夹片的管芯附接部分形成的第二平面平行的第一平面中。
对于本领域的普通技术人员而言,通过说明书和附图并且通过权利要求书,上述以及其他方面、特征和优点将会显而易见。
附图说明
将在下文中结合附图来描述实施方式,在附图中类似标号表示类似元件,并且:
图1是示出半导体封装件的局部透视图;
图2是图1的半导体封装件的分解图;
图3是图1的半导体封装件的侧视局部透视图;
图4是图1的半导体封装件的夹片的透视图;
图5是图1的半导体封装件的引线的一部分的透视图;
图6是图5的引线框的被模塑料覆盖的一部分的视图;
图7是耦接到图5的引线框的一部分的图4的夹片的透视图;
图8是接合到管芯的焊丝的透视图;
图9是耦接到引线框的夹片的第二实施方式的透视图;
图10是耦接到超声压制工具中的引线框的夹片的侧视图;
图11是引线的透视图;
图12是引线的第二实施方式的透视图;
图13是包括多个夹片的框架的透视图;
图14是引线框的一部分的透视图;
图15是具有耦接到其的管芯的图14的引线框的透视图;
图16是具有其上分配有焊料的图15的引线框和管芯的透视图;
图17是通过夹片耦接在一起的图16的引线框和管芯的透视图;
图18是图17的引线框和管芯的透视图,其中导线将管芯耦接到引线框;并且
图19是耦接在图18的引线框和管芯上方的模塑料的半透明透视图。
具体实施方式
本公开、其各方面以及实施方式并不限于本文所公开的具体部件、组装工序或方法要素。本领域已知的与预期半导体封装件和夹片符合的许多附加部件、组装工序和/或方法元素将显而易见地能与本公开的特定实施方式一起使用。因此,例如,尽管本发明公开了特定实施方式,但是此类实施方式和实施部件可包括符合预期操作和方法的本领域已知用于此类半导体封装件和夹片以及实施部件和方法的任何形状、尺寸、样式、类型、模型、版本、量度、浓度、材料、数量、方法元素、步骤等。
参见图1,示出了半导体封装件的局部透视图。图2是图1的半导体封装件的分解图的图示,并且图3是图1的半导体封装件的侧视局部透视图。如图1至图3所示,在各种实施方式中,半导体封装件2可被配置为用于电动车辆和混合动力车辆。在其他实施方式中,半导体封装件可被配置为与非电动车辆或混合动力车辆或非车辆一起使用。在特定实施方式中,作为非限制性示例,半导体封装件2可包括动力系逆变器、DC-DC转换器或车载充电器。在其他实施方式中,半导体封装件2可以是另一种类型的半导体封装件。如图1至图3所示,半导体封装件可包括耦接在引线框6上方的管芯4。在各种实施方式中,管芯可包括碳化硅(SiC)。在其他实施方式中,管芯可包括另一种硅基半导体材料或非硅基半导体材料。如图2所示,在各种实施方式中,管芯4可通过焊料8耦接到引线框6,但是在其他实施方式中,可使用其他粘合剂或管芯接合材料将管芯耦接到引线框。
如图1至图3所示,引线框可被下移设置,这意味着引线框6的管芯附接部分10与引线12在单独的平面中分开或不与引线对准。如图1至图3的取向所示,管芯附接部分从引线12向下设置。虽然本文所公开的实施方式主要涉及下移设置引线框,但应当理解,其他实施方式可包括未下移设置的引线框,包括其中引线框的管芯附接部分和引线在相同平面中或在引线上方的平面中的实施方式。
在各种实施方式中,夹片14耦接到引线12中的至少一个引线以及管芯4。在各种实施方式中,夹片14可以通过焊料或粘合剂耦接到引线中的至少一个引线和/或管芯4。在其他实施方式中,夹片14可焊接到引线。如图1至图3所示,在各种实施方式中,半导体封装件还可包括接合在管芯4与引线12之间的焊丝50。在各种实施方式中,半导体封装件可包括耦接在引线框6和/或夹片14上方的模塑料16。在特定实施方式中,模塑料16可以是环氧树脂模塑料。
在本文所公开的半导体封装件的实施方式中,夹片14可以是自对准的。在此类自对准实施方式中,可防止夹片相对于引线的旋转。参见图4,示出了图1的半导体封装件的夹片的透视图。在各种实施方式中,作为非限制性示例,夹片可包括铜、铝、任何其他金属或导电材料、它们的合金和它们的任何组合。夹片14包括被配置为耦接到管芯4的管芯附接部分18。在各种实施方式中,管芯附接部分18可包括穿过其的一个或多个开口20。如图所示,管芯附接部分还可包括管芯附接部分18的侧壁中的一个或多个凹口22。在各种实施方式中,管芯附接部分18的周边可包括多种形状和尺寸以及在其中的凹入开口。在特定实施方式中,管芯附接部分18的周边可与管芯附接部分被配置为耦接到的管芯的周边具有基本上相同的尺寸和/或形状。在其他实施方式中,管芯附接部分的周边可大于或小于管芯附接部分被配置为耦接到的管芯的周边。
在具有下移设置引线框的半导体封装件的实施方式中,夹片14可包括耦接到管芯附接部分18的阶梯部分24。在特定实施方式中,阶梯部分24可直接耦接到管芯附接部分18。阶梯部分24的高度可被配置为允许夹片14耦接到半导体封装件的管芯4和引线12两者。在各种实施方式中,阶梯部分与管芯附接部分之间的角度可以是90度。在其他实施方式中,阶梯部分与管芯附接部分之间的角度(如图4所示)可大于90度。如图4所示,在各种实施方式中,阶梯部分的宽度可大于管芯附接部分的宽度。如本文所用,宽度是指阶梯部分24的第一侧面26与阶梯部分24的第二侧面28之间的距离。继而,管芯附接部分18、引线附接部分30或夹片14的宽度可以是管芯附接部分、引线附接部分或夹片的对应于第一侧面26和第二侧面28的侧面之间的距离。如图4所示,管芯附接部分18可不沿阶梯部分24的宽度居中。在其他实施方式中,管芯附接部分18可沿阶梯部分24的宽度居中。
仍然参考图4,夹片14包括耦接到阶梯部分24的引线附接部分30。引线附接部分30被配置为耦接在半导体封装件的引线上方。在各种实施方式中,整个引线附接部分是平面的。在其他实施方式中,引线附接部分30可以不是完全平面的。在各种实施方式中,如图所示,引线附接部分30位于与由管芯附接部分18形成的平面基本上平行的平面中。在其他实施方式中,引线附接部分30可不位于与由管芯附接部分18形成的平面平行的平面中。如图4所示,引线附接部分30的宽度可形成阶梯形状,其中引线附接部分30的第一部分32与阶梯部分24对准,并且引线附接部分30的第二部分34从第一部分32偏移。在此类实施方式中,引线附接部分30的特定形状可增加夹片14的总体宽度。
如图4所示,夹片14可包括垂直于宽度的长度,该宽度与夹片的宽度基本上相同或小于夹片的宽度。在此类实施方式中,夹片14的短长度和宽设计可降低半导体封装件内的电感。此外,耦接到引线的夹片的大接触面积也可降低半导体封装件的电感。类似地,正如夹片14的宽度和长度可被配置为获得较高的电性能,夹片的厚度也可为被配置为获得特定电性能的厚度。
仍然参见图4,第一对准特征部36可耦接并且可直接耦接到引线附接部分30的第一侧面40。在各种实施方式中,可以仅将单个对准特征部耦接到夹片14。在其他实施方式中,如图4所示,第二对准特征部38可耦接到并且在各种实施方式中可直接耦接到引线附接部分30的第二侧面42。第二侧面42可与第一侧面40相背对。在其他实施方式中,可将多于两个对准特征部耦接到夹片14。
如图4所示,在各种实施方式中,第一对准特征部36和第二对准特征部38可从引线附接部分30基本上垂直地延伸。第一对准特征部36和第二对准特征部38可被配置为通过接合在包括在引线中的开口、凹口或凹陷部内来对准夹片14。
重新参见图1至图3,引线框包括一个或多个引线12。参见图5,示出了图1的半导体封装件的引线的一部分的透视图。在特定实施方式中,引线12可仅包括三个引线,但是在其他实施方式中,引线12可包括多于或少于三个引线。如图所示,引线12的第一引线44可包括对应于耦接到引线附接部分的对准特征部的数量的一个或多个开口46。如图5所示,第一引线44包括被配置为接纳耦接到引线附接部分30的第一对准特征部36和第二对准特征部38的两个开口。在各种实施方式中,开口46可以完全延伸穿过第一引线44,或者可以仅部分延伸穿过第一引线44。在其他实施方式中,并且如本文稍后公开的,第一引线可包括一个或多个凹口而不是被配置为接纳耦接到夹片的对准特征部的开口46。
参见图6,示出了图5的引线的被模塑料覆盖的一部分的视图。在各种实施方式中,任何引线中的开口46或凹口也可被认为是锁定机构,因为它们可被配置为将模塑料48锁定到引线12。在此类实施方式中,锁定机构可防止本文所公开的任何半导体封装件发生分层。
参见图7,示出了耦接到图5的引线的一部分的图4的夹片的透视图。如图所示,在半导体封装件的各种实施方式中,夹片14的管芯附接部分18耦接在管芯4上方,并且夹片14的引线附接部分30耦接在引线的第一引线44上方。在各种实施方式中,并且如图7所示,第一对准特征部36和第二对准特征部38耦接在第一引线44中的开口46内。在此类实施方式中,第一对准特征部36和第二对准特征部38可防止夹片相对于引线12旋转。另外,第一对准特征部36和第二对准特征部38还可防止夹片14的侧向移动。在此类实施方式中,可能不需要对准夹具来将夹片与第一引线44对准。
仍然参见图7,在各种实施方式中,焊丝50可接合在管芯4与第二引线52之间。在特定实施方式中,焊丝50可以是栅极线。在其他实施方式中,焊丝50可接合在管芯4与第一引线44之间。在其他实施方式中,半导体封装件可不包括任何焊丝,这取决于所包括的特定管芯的结构。
在本文所公开的半导体封装件的各种实施方式中,与仅利用焊丝的半导体封装件相比,可通过使用本文所公开的夹片的实施方式来实现更高的电流额定值和更低的电感。此外,自对准夹片使得本文所公开的半导体封装件能够利用夹片,因为夹片的对准特征部消除了夹片相对于引线的旋转和侧向移动。
参见图8,示出了接合到管芯的焊丝的透视图。如图8所示,在各种实施方式中,引线54可包括引线的一个或多个侧壁58中的一个或多个凹口56。凹口56可被配置为接纳耦接到夹片的对准特征部,以便防止夹片的旋转和移动,类似于图9所示的那样。然而,在各种实施方式中,如图8所示,半导体封装件可不包括夹片,而是可包括焊丝60来代替夹片。因此,尽管引线框和引线可被设计成以便容纳夹片,但引线框和引线也可用于不包括夹片的封装件中。在此类实施方式中,凹口56可用作包封引线54的一部分的模塑料的模制锁定机构。
参见图9,示出了耦接到引线框的夹片的第二实施方式的透视图。在各种实施方式中,引线62可包括引线的一个或多个侧壁66中的一个或多个凹口64。类似于本文所公开的夹片的其他实施方式的实施方式,凹口64可被配置为接纳耦接到夹片70的一个或多个对准特征部68,以便防止夹片的旋转和移动。虽然图9示出了夹片的特定形状,但应当理解,夹片70可包括本文所公开的任何其他夹片的任何形状,并且继而,夹片70的形状可结合到本文所公开的夹片的任何其他实施方式中。
在本文所公开的半导体封装件的实施方式中,每个夹片的引线附接部分可通过焊料或粘合剂耦接到引线。在其他实施方式中,每个夹片的引线附接部分可通过其他机构耦接到引线。参见图10,示出了耦接到超声压制工具中的引线框的夹片的侧视图。如图所示,在各种实施方式中,夹片72的引线附接部分78可焊接到引线74。在此类实施方式中,超声压制工具76可用于将夹片72焊接到引线74。在此类实施方式中,可以通过移除焊料或其他接合材料来减小夹片72与引线74之间的电阻。
参见图11,示出了引线的透视图,并且参见图12,示出了引线的第二实施方式的透视图。如图11所示,在各种实施方式中,引线80可包括一个或多个沟槽82。在此类实施方式中,一个或多个沟槽可以增加焊点的接合线厚度(BLT),该焊点放置在一个或多个沟槽82上方并且被配置为将夹片的引线附接部分接合到引线80。在此类实施方式中,增加的BLT可导致更牢固的焊点。类似地,如图12所示,在各种实施方式中,引线84可包括在其中的一个或多个凹陷部86。在此类实施方式中,一个或多个沟槽可以增加焊点的BLT,该焊点放置在一个或多个凹陷部86上方并且被配置为将夹片的引线附接部分接合到引线84。在此类实施方式中,增加的BLT可导致更牢固的焊点。
在各种实施方式中,形成半导体封装件的方法可包括形成本文所公开的自对准夹片的实施方式。此类方法可包括压印包括多个夹片的框架。参见图13,示出了包括多个夹片的框架的透视图。在各种实施方式中,多个夹片90中的每个夹片可以通过每个夹片两个连杆92耦接到框架88的其余部分。在各种实施方式中,形成夹片的方法可包括单次压印框架88。因此,由于单次压印,每个夹片可仅包括第一弯曲部94和第二弯曲部96。在其他实施方式中,该方法可包括多次压印框架以及在每个夹片中形成多于两个弯曲部。在各种实施方式中,在压印框架88之后,每个夹片90的每个引线附接部分98可位于与每个夹片的每个管芯附接部分100平行的平面中。
在压印框架88之后,形成夹片的方法可包括通过修剪连杆92中的每个连杆来将每个夹片与框架88分离。连杆中的每个连杆可以对应于对应对准特征部的期望长度的长度被修剪。在各种实施方式中,该方法可包括通过使两个或更多个连杆的耦接到每个夹片的一部分弯曲来形成两个或更多个对准特征部。在各种实施方式中,对准特征部中的每个对准特征部可以基本上垂直于夹片的引线附接部分的平面弯曲。
参见图14,示出了引线框的一部分的透视图。在各种实施方式中,形成半导体封装件的方法可包括提供引线框102以及在引线框的引线108中形成一个或多个开口114或凹口。引线框102可以与本文所公开的任何引线框相同或类似。参见图15,示出了具有耦接到其的管芯的图14的引线框的透视图。形成半导体封装件的方法可包括将管芯104耦接到引线框102。管芯104可与本文所公开的任何类型的管芯相同或类似。在各种实施方式中,管芯104可通过焊料或另一种粘合剂耦接到引线框。在其中焊料用于将管芯104耦接到引线框102的特定实施方式中,焊料可包括铅焊料。
参考图16,示出了具有其上分配有焊料的图15的引线框和管芯的透视图。在各种实施方式中,形成半导体封装件的方法可包括在管芯和/或引线108上分配/印刷/丝网印刷焊料106。在其他实施方式中,可以使用粘合剂来代替焊料。在其他实施方式中,在其中夹片焊接到引线的实施方式中,夹片可以直接耦接到引线,而不是将焊料或粘合剂分配在引线上方。此类焊接件可为超声焊接件。
参见图17,示出了通过夹片耦接在一起的图16的引线框和管芯的透视图。在各种实施方式中,该方法可包括将夹片110耦接在管芯104以及引线108上方。夹片可通过焊料或粘合剂耦接到管芯。夹片还可通过焊料、粘合剂或焊接件耦接到引线108。夹片可与本文所公开的任何夹片相同或类似。在此类实施方式中,该方法可包括将夹片的对准特征部112插入形成于引线108中的开口114或凹口中。在其中夹片通过焊料耦接到管芯和/或引线的实施方式中,该方法可包括使夹片和引线框回流以将夹片粘附到管芯和/或引线。
参见图18,示出了图17的引线框和管芯的透视图,其中焊丝将管芯耦接到引线框。在各种实施方式中,该方法可包括将焊丝116耦接到引线框102的管芯104和第二引线118。在其他实施方式中,在形成半导体封装件的方法中可不使用焊丝。
参见图19,示出了耦接在图18的引线框和管芯上方的模塑料的半透明透视图。在各种实施方式中,形成半导体封装件的方法可包括将模塑料120耦接在引线框102的夹片110和引线108上方。模塑料可以是本文所公开的任何类型的模塑料。
形成本文所公开的半导体封装件的方法的实施方式可包括其中夹片的引线附接部分位于与由夹片的管芯附接部分形成的第二平面平行的第一平面中。
形成本文所公开的半导体封装件的方法的实施方式可包括在夹片和引线上方施加模塑料。
半导体夹片的实施方式可包括其中管芯附接部分包括在其中的一个或多个开口。
半导体夹片的实施方式可包括其中整个引线附接部分是平面的。
半导体封装件的实施方式可包括耦接在夹片和引线框上方的模塑料。
半导体封装件的实施方式可包括其中引线附接部分是平面的。
半导体封装件的实施方式可包括其中引线包括在其中的一个或多个凹陷部。
半导体封装件的实施方式可包括其中管芯包括碳化硅。
半导体封装件的实施方式可包括其中引线附接部分通过超声夹片焊接焊接到引线。
半导体封装件的实施方式可包括接合到管芯和第二引线的焊丝。
在以上描述中提到半导体封装件和夹片的特定实施方式以及实施部件、子部件、方法和子方法的地方,应当显而易见的是,可在不脱离其实质的情况下作出多种修改,并且这些实施方式、实施部件、子部件、方法和子方法可应用于其他半导体封装件和夹片。
Claims (10)
1.一种半导体夹片,包括:
管芯附接部分,所述管芯附接部分耦接到阶梯部分;
引线附接部分,所述引线附接部分直接耦接到所述阶梯部分;
第一对准特征部,所述第一对准特征部直接耦接到所述引线附接部分的第一侧面;和
第二对准特征部,所述第二对准特征部直接耦接到所述引线附接部分的第二侧面,其中所述第二侧面与所述第一侧面相背对;
其中所述引线附接部分位于与由所述管芯附接部分形成的平面基本上平行的平面中。
2.根据权利要求1所述的半导体夹片,其中所述第一对准特征部和所述第二对准特征部从所述引线附接部分基本上垂直地延伸。
3.一种半导体封装件,包括:
管芯,所述管芯耦接在引线框上方;
引线,所述引线包括两个开口或两个凹口中的一者;和
夹片,所述夹片包括:
管芯附接部分,所述管芯附接部分耦接到引线附接部分;
第一对准特征部,所述第一对准特征部耦接到所述引线附接部分的第一侧面;和
第二对准特征部,所述第二对准特征部耦接到所述引线附接部分的第二侧面,所述第二侧面与所述第一侧面相背对;
其中所述管芯附接部分耦接在所述管芯上方;
其中所述引线附接部分耦接在所述引线上方;
其中所述第一对准特征部和所述第二对准特征部耦接在所述两个开口或所述两个凹口中的一者内。
4.根据权利要求3所述的半导体封装件,其中所述引线包括被配置为耦接到所述夹片的所述引线的所述侧面中的多个沟槽。
5.根据权利要求3所述的半导体封装件,其中所述引线附接部分位于与由所述管芯附接部分形成的第二平面基本上平行的第一平面中。
6.根据权利要求3所述的半导体封装件,其中所述第一对准特征部和所述第二对准特征部从所述引线附接部分基本上垂直地延伸。
7.一种形成半导体封装件的方法,所述方法包括:
压印包括夹片的框架;
修剪耦接到所述夹片的两个或更多个连杆,以将所述夹片与所述框架分离;
通过使所述两个或更多个连杆的一部分基本上垂直于所述夹片的引线附接部分的平面弯曲来形成两个或更多个对准特征部;以及
将所述夹片耦接在管芯上方以及引线上方。
8.根据权利要求7所述的方法,还包括:将所述两个或更多个对准特征部插入所述引线中的两个凹口或两个开口中的一者中,以及将所述夹片接合到所述管芯和所述引线。
9.根据权利要求8所述的方法,其中将所述夹片接合到所述引线包括:使用超声压制工具将所述夹片焊接到所述引线。
10.根据权利要求7所述的方法,其中所述方法包括:压印所述框架不超过单次。
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US16/695,582 | 2019-11-26 | ||
US16/695,582 US20210159157A1 (en) | 2019-11-26 | 2019-11-26 | Semiconductor clip and related methods |
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US3902189A (en) * | 1974-04-10 | 1975-08-26 | Hunt Electronics | Prefabricated article and methods of maintaining the orientation of parts being bonded thereto |
US7902657B2 (en) * | 2007-08-28 | 2011-03-08 | Fairchild Semiconductor Corporation | Self locking and aligning clip structure for semiconductor die package |
US9496208B1 (en) * | 2016-02-25 | 2016-11-15 | Texas Instruments Incorporated | Semiconductor device having compliant and crack-arresting interconnect structure |
US9941193B1 (en) * | 2016-09-30 | 2018-04-10 | Infineon Technologies Americas Corp. | Semiconductor device package having solder-mounted conductive clip on leadframe |
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