CN112951777B - Packaging structure of GaN-based radio frequency device - Google Patents
Packaging structure of GaN-based radio frequency device Download PDFInfo
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- CN112951777B CN112951777B CN202110059397.1A CN202110059397A CN112951777B CN 112951777 B CN112951777 B CN 112951777B CN 202110059397 A CN202110059397 A CN 202110059397A CN 112951777 B CN112951777 B CN 112951777B
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- heat dissipation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
Abstract
The invention discloses a GaN-based chip packaging structure, which comprises a substrate, a GaN chip arranged on the substrate and a packaging structure which surrounds the substrate to seal the GaN chip, wherein the packaging structure comprises a packaging shell, a heat dissipation assembly arranged at the top end inside the packaging shell and heat dissipation fins uniformly arranged at the top of the packaging shell, and inclined planes inclined towards the center are arranged on two sides of the top of the packaging shell; the heat dissipation assembly comprises a frame-shaped heat dissipation shell, and the bottom of the heat dissipation shell is wavy. According to the invention, the bottom of the heat dissipation shell is wavy, so that the contact area between the heat dissipation shell and the air of the packaging shell is increased, the heat dissipation effect is improved, hot air can gather at the wave crest position of the bottom of the heat dissipation shell according to the phenomenon that the hot air can float upwards, then the hot air enters the heat dissipation tube through the air inlet pipe, the heat dissipation tube absorbs the heat of the air, the temperature of the air is reduced, and cold air sinks and is discharged through the air outlet pipe, so that the air in the packaging shell automatically flows.
Description
Technical Field
The invention relates to the technical field of packaging structures, in particular to a packaging structure of a GaN-based radio frequency device.
Background
The rapid development in the fields of 5G wireless communication, radar, unmanned aerial vehicle, satellite and the like brings wider requirements for radio frequency front-end electronic devices, and the important development trend of microwave and millimeter wave systems is more the main challenge in terms of complicated spectrum processing, high performance, small volume, high integration and light weight. Since 2006, with the breakthrough progress of advanced SiCMOS technology and InP and other heterogeneous integration technologies proposed by the DARPA microsystem in the united states, it is demonstrated and verified that heterogeneous integration is not two technology choices for breaking through the technical limitations. Compared with InP-based and GaAs-based devices, the GaN HEMT device has the highest Johnson factor, can be applied to higher frequency and higher power, and is an essential key device for supporting future high-power radio frequency and microwave communication, aerospace, military systems and the like, so that the GaN heterogeneous integration technology becomes the current international important development direction.
At present, the conventional heat dissipation technologies for GaN device packaging are still mainly air-cooled heat dissipation technology and heat sink heat dissipation technology. The air-cooled heat dissipation technology is a cooling method for dissipating heat by using air to take away heat, and the cooling method comprises natural cooling and forced cooling. The natural cooling technology is widely applied to low-power-consumption devices with low temperature control requirements and low heat flux density due to low cooling cost and no need of maintenance; the forced cooling technology is a way of dissipating heat by forcing ambient air to flow mainly with the aid of a heat dissipating device such as a fan, and has the main advantages of reducing the volume of an air cooling system and dissipating heat 10 times of that of natural cooling. However, for a high-power GaN device, an air-cooled radiator which only depends on conduction and convection in the air-cooled heat dissipation technology is close to the heat conduction limit of the high-power GaN device, the heat dissipation limit capacity of the high-power GaN device can only reduce the thermal resistance between a node and the environment to 0.5 ℃/W, and the cooling efficiency is low; and the heat dissipation devices such as fans and the like for enhancing convection heat transfer are obviously overlarge in diameter compared with microelectronic chips, and the heat dissipation space of the GaN device is limited, so that the heat dissipation performance is limited.
Disclosure of Invention
The present invention is directed to a package structure of a GaN-based rf device to solve the above-mentioned problems.
In order to achieve the purpose, the invention provides the following technical scheme: a packaging structure of a GaN-based radio frequency device comprises a substrate, a GaN chip arranged on the substrate and a packaging structure which surrounds the substrate to seal the GaN chip, wherein the packaging structure comprises a packaging shell, a heat dissipation assembly arranged at the top end inside the packaging shell and heat dissipation fins uniformly arranged at the top of the packaging shell, and inclined planes inclined towards the center are arranged on two sides of the top of the packaging shell;
the heat dissipation assembly comprises a frame-shaped heat dissipation shell, the bottom of the heat dissipation shell is wavy, the top of the heat dissipation shell is matched with the top of the packaging shell, a heat dissipation tube is horizontally arranged in the heat dissipation shell corresponding to a wave trough position, an air inlet tube is uniformly and obliquely arranged in the heat dissipation shell corresponding to a wave crest position, one end of the air inlet tube extends to be communicated with the heat dissipation tube, the other end of the air inlet tube is communicated with the interior of the packaging shell, an air outlet tube is uniformly and vertically arranged at the bottom of the heat dissipation tube, the bottom end of the air outlet tube extends to the bottom of the heat dissipation shell, and cooling liquid is filled in the heat dissipation shell;
radiating fin's inside gaseous liquefaction chamber, and gaseous liquefaction chamber both ends are towards central downward sloping, evenly be provided with funnel one between the both ends at heat dissipation casing top and the gaseous liquefaction chamber, evenly be provided with funnel two between the center of heat dissipation casing and the gaseous liquefaction chamber center, wherein, a funnel large aperture is located the one end of heat dissipation casing, and the large aperture of funnel two is located the one end in gaseous liquefaction chamber.
Preferably, the positions of the air inlet pipe and the air outlet pipe are staggered with each other.
Preferably, the cooling liquid adopts carbon disulfide.
Preferably, the liquid level of the cooling liquid is higher than the height of the radiating pipe.
Preferably, the height of the radiating pipe is higher than that of the wave crest at the bottom of the radiating shell.
Compared with the prior art, the invention has the beneficial effects that:
(1) according to the heat dissipation assembly, the bottom of the heat dissipation shell is wavy, the contact area between the heat dissipation shell and the air of the packaging shell is increased, the heat dissipation effect is improved, hot air can be gathered at the wave crest position of the bottom of the heat dissipation shell according to the phenomenon that the hot air can float upwards and then enters the interior of the heat dissipation tube through the air inlet pipe, the heat of the air is absorbed by the heat dissipation tube, the temperature of the air is reduced, and cold air sinks and is discharged through the air outlet pipe, so that the air in the packaging shell automatically flows.
(2) According to the invention, the cooling liquid is filled in the heat dissipation shell, the cooling liquid is carbon disulfide, the boiling point of the carbon disulfide is 46.2, when the temperature in the packaging shell rises, the carbon disulfide in the packaging shell is gasified, the heat of the heat dissipation shell and the heat dissipation pipe is absorbed, and the air is cooled.
(3) According to the invention, the large aperture of the first funnel pipe is positioned at one end of the heat dissipation shell, the large aperture of the second funnel pipe is positioned at one end of the gas liquefaction cavity, and liquefied carbon disulfide flows into the second funnel pipe to block the second funnel pipe, so that the gasified carbon disulfide can only enter the gas liquefaction cavity through the first funnel pipe.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic top view of the present invention;
fig. 3 is a schematic view of the structure of the surface a-a in fig. 1.
In the figure: 1. a substrate; 2. a GaN chip; 3. a package housing; 31. a bevel; 4. a heat dissipating fin; 41. a heat dissipating housing; 42. a gas liquefaction chamber; 5. a radiating pipe; 6. an air inlet pipe; 7. an air outlet pipe; 8. a first funnel pipe; 9. and a second funnel pipe.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-3, an embodiment of the present invention is shown: a packaging structure of a GaN-based radio frequency device comprises a substrate 1, a GaN chip 2 arranged on the substrate 1 and a packaging structure which surrounds the substrate 1 and seals the GaN chip 2, wherein the packaging structure comprises a packaging shell 3, a heat dissipation assembly arranged at the top end inside the packaging shell 3 and heat dissipation fins 4 uniformly arranged at the top of the packaging shell 3, and inclined planes 31 inclined towards the center are arranged on two sides of the top of the packaging shell 3;
the heat dissipation assembly comprises a frame-shaped heat dissipation shell 41, the bottom of the heat dissipation shell 41 is wavy, the top of the heat dissipation shell 41 is matched with the top of the packaging shell 3, a heat dissipation pipe 5 is horizontally arranged in the heat dissipation shell 41 corresponding to the position of a wave trough, an air inlet pipe 6 is uniformly and obliquely arranged in the heat dissipation shell 41 corresponding to the position of a wave crest, one end of the air inlet pipe 6 extends to be communicated with the heat dissipation pipe 5, the other end of the air inlet pipe 6 is communicated with the interior of the packaging shell 3, an air outlet pipe 7 is uniformly and vertically arranged at the bottom of the heat dissipation pipe 5, the bottom end of the air outlet pipe 7 extends to the bottom of the heat dissipation shell 41, cooling liquid is filled in the heat dissipation shell 41, the positions of the air pipe 6 and the air outlet pipe 7 are staggered with each other, and the height of the heat dissipation pipe 5 is higher than the height of the wave crest at the bottom of the heat dissipation shell 41;
inside gas liquefaction chamber 42 of radiating fin 4, and gas liquefaction chamber 42 both ends are towards central downward sloping, evenly be provided with funnel one 8 between the both ends at heat dissipation casing 41 top and the gas liquefaction chamber 42, evenly be provided with funnel two 9 between the center of heat dissipation casing 41 and the gas liquefaction chamber 42 center, wherein, 8 large apertures of funnel are located the one end of heat dissipation casing 41, the large aperture of funnel two 9 is located the one end of gas liquefaction chamber 42, the coolant liquid adopts carbon disulfide, the liquid level of coolant liquid is higher than the height of cooling tube 5.
The working principle is as follows: during the application, because the bottom of heat dissipation casing 41 is wavy, improve and the area of contact of heat dissipation casing 41 and encapsulation casing 3 air, improve the radiating effect, and according to the phenomenon that hot-air can come up, the crest position department of hot-air can gathering heat dissipation casing 41 bottom, then get into inside cooling tube 5 through intake pipe 6, cooling tube 5 absorbs the air heat, make the air temperature reduce, cold air takes place to sink and discharges through outlet duct 7, make encapsulation casing 3 inside air automatic flow, and the coolant liquid is carbon disulfide, because the boiling point of carbon disulfide is 46.2, when encapsulation casing 3 inside temperature risees, can make the inside carbon disulfide of encapsulation casing 3 take place to gasify, absorb the heat of heat dissipation casing 41 and cooling tube 5, cool down the air, because heat dissipation casing 41 top and encapsulation casing 3 top looks adaptation, carbon disulfide after the gasification removes to heat dissipation casing 41 to both sides through funnel 8 and gets into the gas of radiating fin 4 Inside the body liquefaction chamber 42, because radiating fin 4 is located the 3 outsides of encapsulation casing, the temperature reduces, can take place the liquefaction behind the gas liquefaction chamber that gasification back carbon disulfide got into radiating fin 4 and emit the heat, then it flows back to radiating shell 41 inside through two 9 funnels of filler pipe to go along gas liquefaction chamber 42 bottom, form the self-loopa heat dissipation, in this process, because 8 large apertures of a funnel pipe are located radiating shell 41's one end, the large aperture of two 9 funnels of filler pipe is located the one end of gas liquefaction chamber 42, carbon disulfide after the liquefaction flows into two 9 insides of funnel pipe and can block up two 9 funnels of filler pipe, make the carbon disulfide after the gasification can only get into gas liquefaction chamber 42 through 8 funnels of filler pipe.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that various changes in the embodiments and/or modifications of the invention can be made, and equivalents and modifications of some features of the invention can be made without departing from the spirit and scope of the invention.
Claims (5)
1. A packaging structure of a GaN-based radio frequency device comprises a substrate (1), a GaN chip (2) arranged on the substrate (1) and a packaging structure which surrounds the substrate (1) to seal the GaN chip (2), and is characterized in that the packaging structure comprises a packaging shell (3), a heat dissipation assembly arranged at the top end inside the packaging shell (3) and heat dissipation fins (4) uniformly arranged at the top of the packaging shell (3), wherein inclined planes (31) inclined towards the center are arranged on two sides of the top of the packaging shell (3);
the heat dissipation assembly comprises a frame-shaped heat dissipation shell (41), the bottom of the heat dissipation shell (41) is wavy, the top of the heat dissipation shell (41) is matched with the top of the packaging shell (3) mutually, a heat dissipation pipe (5) is horizontally arranged in the heat dissipation shell (41) corresponding to a wave trough position, an air inlet pipe (6) is uniformly and obliquely arranged in the heat dissipation shell (41) corresponding to a wave crest position, one end of the air inlet pipe (6) extends to be communicated with the heat dissipation pipe (5), the other end of the air inlet pipe (6) is communicated with the interior of the packaging shell (3), an air outlet pipe (7) is uniformly and vertically arranged at the bottom of the heat dissipation pipe (5), the bottom end of the air outlet pipe (7) extends to the bottom of the heat dissipation shell (41), and cooling liquid is filled in the heat dissipation shell (41);
inside gaseous liquefaction chamber (42) of radiating fin (4), and gaseous liquefaction chamber (42) both ends are towards central downward sloping, evenly be provided with funnel one (8) between the both ends at radiating shell (41) top and gaseous liquefaction chamber (42), evenly be provided with funnel two (9) between the center of radiating shell (41) and gaseous liquefaction chamber (42) center, wherein, funnel one (8) large aperture is located the one end of radiating shell (41), and the large aperture of funnel two (9) is located the one end of gaseous liquefaction chamber (42).
2. The package structure of a GaN-based radio frequency device of claim 1, wherein: the positions of the air inlet pipe (6) and the air outlet pipe (7) are staggered with each other.
3. The package structure of a GaN-based radio frequency device of claim 1, wherein: the cooling liquid adopts carbon disulfide.
4. The package structure of a GaN-based radio frequency device of claim 1, wherein: the liquid level of the cooling liquid is higher than the height of the radiating pipe (5).
5. The package structure of a GaN-based radio frequency device of claim 1, wherein: the height of the radiating pipe (5) is higher than that of the wave crest at the bottom of the radiating shell (41).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110059397.1A CN112951777B (en) | 2021-01-18 | 2021-01-18 | Packaging structure of GaN-based radio frequency device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110059397.1A CN112951777B (en) | 2021-01-18 | 2021-01-18 | Packaging structure of GaN-based radio frequency device |
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| Publication Number | Publication Date |
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| CN112951777A CN112951777A (en) | 2021-06-11 |
| CN112951777B true CN112951777B (en) | 2022-08-26 |
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| CN202110059397.1A Active CN112951777B (en) | 2021-01-18 | 2021-01-18 | Packaging structure of GaN-based radio frequency device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116675175B (en) * | 2023-08-04 | 2023-12-08 | 青岛泰睿思微电子有限公司 | Multifunctional image light sense packaging structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1917188A (en) * | 2005-08-19 | 2007-02-21 | 南茂科技股份有限公司 | Heat elimination type structure for packing complex crystal |
| CN103413794A (en) * | 2013-08-16 | 2013-11-27 | 中国科学院深圳先进技术研究院 | Radiating packaging structure of semiconductor power device |
| CN103413790A (en) * | 2013-08-16 | 2013-11-27 | 中国科学院深圳先进技术研究院 | Packaging structure of integrated power control unit |
| CN110350764A (en) * | 2019-07-16 | 2019-10-18 | 河南豫乾技术转移中心有限公司 | The frequency converter shell for facilitating frequency converter to radiate |
| CN211289981U (en) * | 2019-10-10 | 2020-08-18 | 祝慧 | Liquid radiating radiator |
-
2021
- 2021-01-18 CN CN202110059397.1A patent/CN112951777B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1917188A (en) * | 2005-08-19 | 2007-02-21 | 南茂科技股份有限公司 | Heat elimination type structure for packing complex crystal |
| CN103413794A (en) * | 2013-08-16 | 2013-11-27 | 中国科学院深圳先进技术研究院 | Radiating packaging structure of semiconductor power device |
| CN103413790A (en) * | 2013-08-16 | 2013-11-27 | 中国科学院深圳先进技术研究院 | Packaging structure of integrated power control unit |
| CN110350764A (en) * | 2019-07-16 | 2019-10-18 | 河南豫乾技术转移中心有限公司 | The frequency converter shell for facilitating frequency converter to radiate |
| CN211289981U (en) * | 2019-10-10 | 2020-08-18 | 祝慧 | Liquid radiating radiator |
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| CN112951777A (en) | 2021-06-11 |
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