CN112947663A - Bias voltage generating circuit of uncooled infrared detector - Google Patents
Bias voltage generating circuit of uncooled infrared detector Download PDFInfo
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- CN112947663A CN112947663A CN202110324439.XA CN202110324439A CN112947663A CN 112947663 A CN112947663 A CN 112947663A CN 202110324439 A CN202110324439 A CN 202110324439A CN 112947663 A CN112947663 A CN 112947663A
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- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/561—Voltage to current converters
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Abstract
The invention discloses a bias voltage generating circuit of an uncooled infrared detector, which comprises: the low dropout linear regulator has root mean square noise smaller than that of the uncooled infrared detector; the input end of the filter network is connected with the voltage output end of the low dropout linear regulator so as to filter noise; and the input ends of the plurality of resistor voltage division networks are connected with the output end of the filter network, and the output ends of the plurality of resistor voltage division networks are connected with the small-load current bias input end of the uncooled infrared detector so as to provide the generated small-load current bias to the uncooled infrared detector. The bias voltage generating circuit of the uncooled infrared detector is simple in design, can meet the requirement of low noise, and is convenient for miniaturization and saving device cost.
Description
Technical Field
The invention relates to the technical field of uncooled infrared detectors, in particular to a bias voltage generating circuit of an uncooled infrared detector.
Background
At present, the uncooled infrared detector is more and more widely applied to the military and civil fields due to the advantages of low cost and easy miniaturization. But the uncooled infrared detector has the defects of low sensitivity, various bias voltage types, noise sensitivity of a driving circuit and the like. In the design of a drive circuit of an uncooled infrared detector, the design of an analog voltage and a bias circuit of the detector is emphasized, generally, the bias voltage requires lower noise level and stability, and the quality and the imaging performance of an output signal of the detector are directly determined by the performance of the bias voltage.
In order to meet the requirement of the driving voltage of the infrared detector, a plurality of existing patent documents propose optimized schemes. In a bias voltage generating circuit for an uncooled infrared detector (application No. 201410475438.5), a circuit which has low noise and simple structure and does not need to change bias voltage is provided; a low-noise, wide-voltage and high-precision bias voltage is provided in a non-refrigeration type infrared detector precision bias voltage adjusting device (application No. 201510782959. X); a novel circuit which has simple structure, flexible control and real-time output of different voltages is provided in a low-noise numerical control bias voltage generating circuit for an infrared imaging detector (application number: 200920005646.3); the hardware design without changing the bias device is proposed in the 'bias device for low-noise amorphous silicon uncooled infrared detector' (application number: 201310239926.1).
The above prior art circuits all have their advantages, but also have their disadvantages: the circuits are all complex; a reference voltage source circuit is needed, and the load capacity of a general reference source chip is limited; an operational amplifier circuit is needed, and the amplifier circuit also needs to be powered; for the bias voltage which needs to generate large current, the design can not meet the requirement, the design of the bias circuit which meets the requirement is too complex, the miniaturization of the infrared detector circuit is not facilitated, and meanwhile, a plurality of devices easily bring more noises.
Disclosure of Invention
Technical problem to be solved
The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a simplified and low-noise bias voltage generating circuit for an uncooled infrared detector.
Technical scheme
In order to achieve the above object, a bias voltage generating circuit for an uncooled infrared detector according to the present invention may include: the low dropout linear regulator has root mean square noise smaller than that of the uncooled infrared detector; the input end of the filter network is connected with the voltage output end of the low dropout linear regulator so as to filter noise; and the input ends of the plurality of resistor voltage division networks are connected with the output end of the filter network, and the output ends of the plurality of resistor voltage division networks are connected with the small-load current bias input end of the uncooled infrared detector so as to provide the generated small-load current bias to the uncooled infrared detector.
Preferably, the voltage output terminal of the low dropout regulator may be directly connected to the large load current bias input terminal of the uncooled infrared detector for providing the large load current bias to the uncooled infrared detector.
Preferably, the bias voltage generating circuit of the uncooled infrared detector may further include a DA conversion chip with a reference voltage, a power input terminal of the DA conversion chip is connected to a separate power supply, and an output terminal of the DA conversion chip is connected to the adjustable current bias input terminal of the uncooled infrared detector, so as to provide the generated adjustable current bias to the uncooled infrared detector.
Preferably, the bias voltage generating circuit of the uncooled infrared detector may further include a DA conversion chip having no reference voltage, a power input end of the DA conversion chip is connected to the single power supply, a reference voltage input end of the DA conversion chip is connected to an output end of one of the plurality of resistive voltage dividing networks, so as to obtain a reference voltage from the one of the resistive voltage dividing networks, and an output end of the DA conversion chip is connected to an adjustable current bias input end of the uncooled infrared detector, so as to provide the generated adjustable current bias to the uncooled infrared detector.
Preferably, the bias voltage generating circuit of the uncooled infrared detector may further include a DA conversion chip with a reference voltage, a power input end of the DA conversion chip is directly connected to the voltage output end of the low dropout linear regulator, and an output end of the DA conversion chip is connected to the adjustable current bias input end of the uncooled infrared detector, so as to provide the generated adjustable current bias to the uncooled infrared detector.
Preferably, the bias voltage generating circuit of the uncooled infrared detector may further include a DA conversion chip with a non-self reference voltage, a power input end of the DA conversion chip is directly connected to the voltage output end of the low dropout linear regulator, a reference voltage input end of the DA conversion chip is connected to an output end of one of the plurality of resistive voltage-dividing networks, so as to obtain a reference voltage from the one of the resistive voltage-dividing networks, and an output end of the DA conversion chip is connected to an adjustable current bias input end of the uncooled infrared detector, so as to provide the generated adjustable current bias to the uncooled infrared detector.
Preferably, the filter network may adopt one or more of a pi-type filter network, a T-type filter network and an LC filter network.
Advantageous effects
The bias voltage generating circuit of the uncooled infrared detector is very simplified, can meet the low noise requirement of the uncooled infrared detector, is stable in operation, can omit configurations of an operational amplifier, a corresponding power supply chip and the like, and can omit a reference power supply chip, so that the uncooled infrared detector is convenient to miniaturize and save device cost. In addition, the large load current bias in the prior art is generally provided by using a separate power supply, but the invention can be directly provided by the LDO, the LDO simultaneously provides the small load current bias, and the circuit is very simplified.
Drawings
Fig. 1 is a bias voltage generating circuit of an uncooled infrared detector provided according to a first embodiment of the present invention.
Fig. 2 is a bias voltage generating circuit of an uncooled infrared detector provided in accordance with a second embodiment of the present invention.
Fig. 3 is a bias voltage generating circuit of an uncooled infrared detector provided in accordance with a third embodiment of the present invention.
Fig. 4 is a bias voltage generating circuit of an uncooled infrared detector provided in accordance with a fourth embodiment of the present invention.
Fig. 5 is a bias voltage generating circuit of an uncooled infrared detector provided in accordance with a fifth embodiment of the present invention.
Fig. 6 is a bias voltage generating circuit of an uncooled infrared detector provided in a sixth embodiment of the present invention.
Fig. 7 is a bias voltage generating circuit of an uncooled infrared detector provided in accordance with a seventh embodiment of the present invention.
Fig. 8 is a bias voltage generating circuit of an uncooled infrared detector provided in an eighth embodiment of the present invention.
Fig. 9 is a bias voltage generating circuit of an uncooled infrared detector provided in a ninth embodiment of the present invention.
Fig. 10 is a bias voltage generating circuit of an uncooled infrared detector provided in accordance with a tenth embodiment of the present invention.
Fig. 11 is a bias voltage generating circuit of an uncooled infrared detector provided according to an experimental example of the present invention.
[ description of reference ]
100: the LDO 200: filter network
300: multiple resistive voltage divider networks 400: uncooled infrared detector
500: DA conversion chip 600: individual power supply
Detailed Description
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present invention pertains can easily understand the present invention.
Only the portions necessary for understanding the technical contents of the present invention will be described, and the description of the remaining portions will be omitted so as not to obscure the gist of the present invention. In this process, the thickness of lines and the size of constituent elements shown in the drawings may be exaggerated for clarity and convenience of description. In addition, when a certain component is referred to as "including", or "having" another component, it means that the other component may be included without excluding the other component unless otherwise specified. In addition, in the present invention, terms such as "first" and "second" are used only for the purpose of distinguishing a certain component from another component, and when not particularly mentioned, the order, the degree of importance, and the like between the components are not limited. Therefore, within the scope of the present application, a first component in one embodiment may be referred to as a second component in another embodiment, and similarly, a second component in one embodiment may be referred to as a first component in another embodiment.
Fig. 1 is a bias voltage generating circuit of an uncooled infrared detector 400 provided according to a first embodiment of the present invention.
As shown in fig. 1, the bias voltage generating circuit of the uncooled infrared detector 400 according to the first embodiment of the present invention may include a Low Dropout Regulator (LDO) 100, a filter network 200, and a plurality of resistor voltage dividing networks 300.
The Root Mean Square (RMS) noise of the low dropout linear regulator 100, i.e., the LDO100, is smaller than the RMS noise of the uncooled infrared detector 400, so that the LDO100 can meet the noise requirement of the uncooled infrared detector 400. Thus, the circuit can be simplified, and even if the circuit is simple, the LDO100 can meet the noise requirement of the uncooled infrared detector 400. In the prior art, even if the LDO or the low noise LDO is used, the circuit structure is complicated due to design reasons.
The filter network 200 is respectively connected to the LDO100 and the plurality of resistor divider networks 300. Specifically, an input terminal of the filter network 200 is connected to a voltage output terminal of the LDO100 for filtering noise. The output of the filter network 200 is connected to the inputs of a plurality of resistor divider networks 300. The filter network 200 may employ a known filter network, such as a pi filter network, a T filter network, an LC filter network, or the like.
The plurality of resistive voltage dividing networks 300 may include n resistive voltage dividing networks, where n may be a natural number greater than or equal to 1, for example, a natural number such as 1, 2, 3, 4, 5, and the number may be set according to actual needs of the circuit. The output terminals of the plurality of resistive divider networks 300 are connected to the low-load current bias input terminal of the uncooled infrared detector 400 to provide the generated low-load current bias to the uncooled infrared detector 400.
Fig. 2 is a bias voltage generating circuit of an uncooled infrared detector 400 provided in accordance with a second embodiment of the present invention.
As shown in fig. 2, the bias voltage generating circuit of the uncooled infrared detector 400 according to the second embodiment of the present invention may include an LDO100, a filter network 200, and a plurality of resistor divider networks 300.
Wherein, the RMS noise of the LDO100 is less than the RMS noise of the uncooled infrared detector 400, so that the LDO100 can meet the noise requirement of the uncooled infrared detector 400. Thus, the circuit can be simplified, and even if the circuit is simple, the LDO100 can meet the noise requirement of the uncooled infrared detector 400. In the prior art, even if the LDO or the low noise LDO is used, the circuit structure is complicated due to design reasons.
The filter network 200 is respectively connected to the LDO100 and the plurality of resistor divider networks 300. Specifically, an input terminal of the filter network 200 is connected to a voltage output terminal of the LDO100 for filtering noise. The output of the filter network 200 is connected to the inputs of a plurality of resistor divider networks 300. The filter network 200 may employ a known filter network, such as a pi filter network, a T filter network, an LC filter network, or the like.
The plurality of resistive voltage dividing networks 300 may include n resistive voltage dividing networks, where n may be a natural number greater than or equal to 1, for example, a natural number such as 1, 2, 3, 4, 5, and the number may be set according to actual needs of the circuit. The output terminals of the plurality of resistive divider networks 300 are connected to the low-load current bias input terminal of the uncooled infrared detector 400 to provide the generated low-load current bias to the uncooled infrared detector 400.
And, according to the requirement of the uncooled infrared detector 400, the voltage output terminal of the LDO100 may be directly connected to the large load current bias input terminal of the uncooled infrared detector 400, so as to provide the large load current bias to the uncooled infrared detector 400. In the prior art, the uncooled infrared detector can be realized only by carrying an amplifier or carrying other complex power supplies if a large load current bias voltage is required. In the present embodiment, the LDO100 directly provides a large load current bias and simultaneously provides a small load current bias, so that the circuit is simplified.
Fig. 3 is a bias voltage generating circuit of an uncooled infrared detector 400 provided in accordance with a third embodiment of the present invention.
Compared with the first embodiment, the bias voltage generating circuit of the uncooled infrared detector of the third embodiment may further include a DA conversion chip 500 with a reference voltage according to the requirement of the uncooled infrared detector 400. The power input terminal of the DA conversion chip 500 is connected to the single power supply 600, and the output terminal of the DA conversion chip 500 is connected to the adjustable current bias input terminal of the uncooled infrared detector 400, so as to provide the generated adjustable current bias to the uncooled infrared detector 400.
Fig. 4 is a bias voltage generating circuit of an uncooled infrared detector 400 provided in accordance with a fourth embodiment of the present invention.
Compared with the second embodiment, the bias voltage generating circuit of the uncooled infrared detector of the fourth embodiment may further include a DA conversion chip 500 with a reference voltage according to the requirement of the uncooled infrared detector 400. The power input terminal of the DA conversion chip 500 is connected to the single power supply 600, and the output terminal of the DA conversion chip 500 is connected to the adjustable current bias input terminal of the uncooled infrared detector 400, so as to provide the generated adjustable current bias to the uncooled infrared detector 400.
Fig. 5 is a bias voltage generating circuit of an uncooled infrared detector 400 provided in accordance with a fifth embodiment of the present invention.
Compared with the first embodiment, the bias voltage generating circuit of the uncooled infrared detector of the fifth embodiment may further include a DA conversion chip 500 without a reference voltage according to the requirement of the uncooled infrared detector 400. The power input terminal of the DA conversion chip 500 is connected to the single power supply 600, the reference voltage input terminal of the DA conversion chip 500 is connected to the output terminal of one of the plurality of resistive voltage dividing networks 300 (schematically shown in fig. 5 as being connected to the output terminal of the nth resistive voltage dividing network) for obtaining the reference voltage from the resistive voltage dividing network 300, and the output terminal of the DA conversion chip 500 is connected to the adjustable current bias input terminal of the uncooled infrared detector 400 for providing the generated adjustable current bias to the uncooled infrared detector 400.
Fig. 6 is a bias voltage generating circuit of an uncooled infrared detector 400 provided in accordance with a sixth embodiment of the present invention.
Compared with the second embodiment, the bias voltage generating circuit of the uncooled infrared detector of the sixth embodiment may further include a DA conversion chip 500 without a reference voltage according to the requirement of the uncooled infrared detector 400. The power input terminal of the DA conversion chip 500 is connected to the single power supply 600, the reference voltage input terminal of the DA conversion chip 500 is connected to the output terminal of one of the plurality of resistive voltage dividing networks 300 (schematically shown in fig. 6 as being connected to the output terminal of the nth resistive voltage dividing network) for obtaining the reference voltage from the resistive voltage dividing network 300, and the output terminal of the DA conversion chip 500 is connected to the adjustable current bias input terminal of the uncooled infrared detector 400 for providing the generated adjustable current bias to the uncooled infrared detector 400.
Fig. 7 is a bias voltage generating circuit of the uncooled infrared detector 400 provided in accordance with a seventh embodiment of the present invention.
Compared with the first embodiment, the bias voltage generating circuit of the uncooled infrared detector of the seventh embodiment may further include a DA conversion chip 500 with a reference voltage according to the requirement of the uncooled infrared detector 400, a power input terminal of the DA conversion chip 500 is directly connected to the voltage output terminal of the LDO100, and an output terminal of the DA conversion chip 500 is connected to the adjustable current bias input terminal of the uncooled infrared detector 400, so as to provide the generated adjustable current bias to the uncooled infrared detector 400.
As shown in the third to sixth embodiments, the DA conversion chip can be directly powered by a separate power supply, but the circuit structure is not simplified enough, for example, when a common LDO is considered for power supply, the noise of the LDO may interfere with the circuit of the DA conversion chip. In the embodiment, the low-noise LDO100 is used to simultaneously supply power to the DA conversion chip 500, so that the circuit interference to the DA conversion chip 500 is small, and the circuit is very simplified.
Fig. 8 is a bias voltage generating circuit of an uncooled infrared detector 400 provided in accordance with an eighth embodiment of the present invention.
Compared with the second embodiment, the bias voltage generating circuit of the uncooled infrared detector of the eighth embodiment may further include a DA conversion chip 500 with a reference voltage according to the requirement of the uncooled infrared detector 400, a power input terminal of the DA conversion chip 500 is directly connected to the voltage output terminal of the LDO100, and an output terminal of the DA conversion chip 500 is connected to the adjustable current bias input terminal of the uncooled infrared detector 400, so as to provide the generated adjustable current bias to the uncooled infrared detector 400.
As shown in the third to sixth embodiments, the DA conversion chip can be directly powered by a separate power supply, but the circuit structure is not simplified enough, for example, when a common LDO is considered for power supply, the noise of the LDO may interfere with the circuit of the DA conversion chip. In the embodiment, the low-noise LDO100 is used to simultaneously supply power to the DA conversion chip 500, so that the circuit interference to the DA conversion chip 500 is small, and the circuit is very simplified.
Fig. 9 is a bias voltage generating circuit of the uncooled infrared detector 400 provided in accordance with the ninth embodiment of the present invention.
Compared with the first embodiment, the bias voltage generating circuit of the uncooled infrared detector of the ninth embodiment may further include a non-self reference voltage DA converting chip 500 according to the requirement of the uncooled infrared detector 400, a power input terminal of the DA converting chip 500 is directly connected to the voltage output terminal of the LDO100, a reference voltage input terminal of the DA converting chip 500 is connected to an output terminal of one of the plurality of resistive voltage dividing networks 300 (schematically shown in fig. 9 as being connected to an output terminal of an nth resistive voltage dividing network) for obtaining a reference voltage from the resistive voltage dividing network 300, and an output terminal of the DA converting chip 500 is connected to an adjustable current bias input terminal of the non-cooled infrared detector 400 for providing the generated adjustable current bias to the uncooled infrared detector 400.
As shown in the third to sixth embodiments, the DA conversion chip can be directly powered by a separate power supply, but the circuit structure is not simplified enough, for example, when a common LDO is considered for power supply, the noise of the LDO may interfere with the circuit of the DA conversion chip. In the embodiment, the low-noise LDO100 is used to simultaneously supply power to the DA conversion chip 500, so that the circuit interference to the DA conversion chip 500 is small, and the circuit is very simplified.
Fig. 10 is a bias voltage generating circuit of an uncooled infrared detector 400 provided in accordance with a tenth embodiment of the present invention.
Compared with the second embodiment, the bias voltage generating circuit of the uncooled infrared detector of the tenth embodiment may further include a non-self reference voltage DA converting chip 500 according to the requirement of the uncooled infrared detector 400, a power input terminal of the DA converting chip 500 is directly connected to the voltage output terminal of the LDO100, a reference voltage input terminal of the DA converting chip 500 is connected to an output terminal of one of the plurality of resistive voltage dividing networks 300 (schematically shown in fig. 10 as being connected to an output terminal of an nth resistive voltage dividing network) for obtaining a reference voltage from the resistive voltage dividing network 300, and an output terminal of the DA converting chip 500 is connected to an adjustable current bias input terminal of the non-cooled infrared detector 400 for providing the generated adjustable current bias to the uncooled infrared detector 400.
As shown in the third to sixth embodiments, the DA conversion chip can be directly powered by a separate power supply, but the circuit structure is not simplified enough, for example, when a common LDO is considered for power supply, the noise of the LDO may interfere with the circuit of the DA conversion chip. In the embodiment, the low-noise LDO100 is used to simultaneously supply power to the DA conversion chip 500, so that the circuit interference to the DA conversion chip 500 is small, and the circuit is very simplified.
An experimental example of the present invention (the same principle as the second embodiment) will be described below with reference to fig. 11.
Fig. 11 is a bias voltage generating circuit of an uncooled infrared detector provided according to an experimental example of the present invention.
In the experimental example, the uncooled infrared detector selects GWSP _02_02_ X1AF of beijing guangdong micro-integrated electronics, and the bias voltage part of GWSP _02_02_ X1AF includes fixed bias voltages VSK, VEB and VREF. Table 1 below shows bias voltage requirements required for GWSP _02_02_ X1AF, and it is understood that the requirements for both accuracy and noise are constant. The VSK bias current is large.
Table 1: voltage parameter of GWSP _02_02_ X1AF
A common reference voltage chip, such as a commonly used LTC6655, outputs a short-circuit current of 20mA, which cannot meet the requirement of GWSP _02_02_ X1 AF. The patent documents mentioned in the foregoing section are generally applicable to bias designs in which the maximum current is a few mA (less than 10mA, typically 1-2mA), and are not applicable to large load current biases like in this experimental example, and the circuit design is inevitably more complicated to meet the requirements of this experimental example.
In this experimental example, an ultra-low noise LDO is selected whose RMS noise must be sufficiently small, i.e., less than the RMS noise requirement of the GWSP _02_02_ X1AF bias voltage. For example, the LDO that can be selected in this experimental example outputs a noise peak equal to or less than 0.8 μ V (10Hz to 100Hz) in a frequency range of 10Hz to 100Hz, while its output current reaches 200 mA. Of course, the low noise LDO with output current reaching 50mA, 100mA, etc. may also be selected, and the specific current may be selected according to the large current requirement required by the detector.
According to the design requirement of GWSP _02_02_ X1AF, the voltage output terminal of LDO is directly connected to VSK pin of GWSP _02_02_ X1AF, so as to generate a 5.6V bias voltage (required by VSK pin) and input the bias voltage to VSK pin of GWSP _02_ X1AF, wherein the voltage meets the current and RMS noise requirements. Meanwhile, a voltage output end of the LDO is connected with an input end of a filter network (a simple pi-shaped filter network can be used), and an output end of the filter network is connected to two paths of resistance voltage division networks, namely a first resistance voltage division network and a second resistance voltage division network, so that bias voltage generated by the first resistance voltage division network is input to a VEB pin of GWSP _02_ X1AF, and bias voltage generated by the second resistance voltage division network is input to a VREF pin of GWSP _02_02_ X1 AF.
The design is very simple, the requirement of low noise of GWSP _02_02_ X1AF can be completely met, and the miniaturization and the saving of device cost are facilitated.
The scope of the claims of the present invention is not to be limited to the specific embodiments described above. Various other embodiments of modifications or alterations that can be made by those skilled in the art without departing from the scope of the technical idea of the present invention described in the claims should also be included in the scope of the claims of the present invention.
Claims (7)
1. A bias voltage generating circuit for an uncooled infrared detector, comprising:
the low dropout linear regulator has root mean square noise smaller than that of the uncooled infrared detector;
the input end of the filter network is connected with the voltage output end of the low dropout linear regulator so as to filter noise; and
and the input ends of the plurality of resistor voltage division networks are connected with the output end of the filter network, and the output ends of the plurality of resistor voltage division networks are connected with the small-load current bias input end of the uncooled infrared detector so as to provide the generated small-load current bias to the uncooled infrared detector.
2. The bias voltage generating circuit for an uncooled infrared detector as claimed in claim 1, wherein the voltage output terminal of the low dropout linear regulator is directly connected to the large load current bias input terminal of the uncooled infrared detector for supplying the large load current bias to the uncooled infrared detector.
3. The bias voltage generating circuit of an uncooled infrared detector as claimed in claim 1 or 2, further comprising a DA conversion chip with a reference voltage, a power input terminal of the DA conversion chip being connected to a separate power supply, an output terminal of the DA conversion chip being connected to the adjustable current bias input terminal of the uncooled infrared detector for supplying the generated adjustable current bias to the uncooled infrared detector.
4. The bias voltage generating circuit of an uncooled infrared detector as claimed in claim 1 or 2, further comprising a non-self-contained reference voltage DA converting chip, a power input terminal of the DA converting chip is connected to a separate power supply, a reference voltage input terminal of the DA converting chip is connected to an output terminal of one of the plurality of resistive voltage dividing networks for obtaining a reference voltage from the one of the resistive voltage dividing networks, and an output terminal of the DA converting chip is connected to the adjustable current bias input terminal of the uncooled infrared detector for providing the generated adjustable current bias to the uncooled infrared detector.
5. The bias voltage generating circuit of an uncooled infrared detector as claimed in claim 1 or 2, further comprising a DA conversion chip with a reference voltage, a power input terminal of the DA conversion chip is directly connected to the voltage output terminal of the low dropout linear regulator, and an output terminal of the DA conversion chip is connected to the adjustable current bias input terminal of the uncooled infrared detector for providing the generated adjustable current bias to the uncooled infrared detector.
6. The bias voltage generating circuit of an uncooled infrared detector as claimed in claim 1 or 2, further comprising a non-self-contained reference voltage DA converting chip, a power input terminal of the DA converting chip is directly connected to the voltage output terminal of the low dropout linear regulator, a reference voltage input terminal of the DA converting chip is connected to an output terminal of one of the plurality of resistive voltage dividing networks for obtaining a reference voltage from the one of the resistive voltage dividing networks, and an output terminal of the DA converting chip is connected to the adjustable current bias input terminal of the uncooled infrared detector for providing the generated adjustable current bias to the uncooled infrared detector.
7. The bias voltage generating circuit of the uncooled infrared detector of claim 1 or 2, wherein the filter network adopts one or more of a pi-type filter network, a T-type filter network and an LC filter network.
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