CN112928091A - Drive chip packaging structure - Google Patents
Drive chip packaging structure Download PDFInfo
- Publication number
- CN112928091A CN112928091A CN201911237338.8A CN201911237338A CN112928091A CN 112928091 A CN112928091 A CN 112928091A CN 201911237338 A CN201911237338 A CN 201911237338A CN 112928091 A CN112928091 A CN 112928091A
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- Prior art keywords
- power switch
- die
- control module
- mounting portion
- die mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
A drive chip packaging structure comprises a first crystal grain carrying part, a second crystal grain carrying part, a first power switch component, a second power switch component and a control module, wherein the first crystal grain carrying part and the second crystal grain carrying part are adjacently arranged, a gap is formed between the first crystal grain carrying part and the second crystal grain carrying part, the first power switch component is arranged on the first crystal grain carrying part, the second power switch component is arranged on the second crystal grain carrying part, the control module is at least partially arranged on the first crystal grain carrying part and the second crystal grain carrying part, and a packaging body is used for packaging the first crystal grain carrying part, the second crystal grain carrying part, the first power switch component, the second power switch component and the control module. Therefore, the control module can detect the temperature change of the first power switch component and the second power switch component in real time, and further reduces the burning-out situation of the first power switch component, the second power switch component and the control module.
Description
Technical Field
The present invention relates to a driver chip package, and more particularly, to a driver chip package capable of sensing a temperature of a chip in real time.
Background
A Circuit Board of a conventional Main Board (Main Board or heat Board) includes a plurality of Central Processing Units (CPUs), Graphic Processing Units (GPUs), electrical connection circuits (Conductive circuits), Switch units (Switch units), and other Electronic Components (Electronic Components), and these Electronic Components generate a large amount of heat during operation, and usually require a fan to remove the heat.
In the prior art, in order to control the start and operation of the fan motor, a Driver Chip (Driver Chip) of a high power electronic component is required to be used as a core Chip of a motor driving circuit in the fan, and when the high power electronic component works, because the motor driving circuit must supply a large current at the same time when driving the fan to work, a large amount of heat is also generated.
Fig. 1 is a schematic cross-sectional view showing a package structure of a driver chip according to a prior art scheme. Referring to fig. 1, a conventional driver chip package 1 includes two power switch devices 2 and 3 and a control module 4, wherein the power switch device 2 is disposed on a Die Pad (Die Pad)5, the power switch device 3 is disposed on a Die Pad 6, the control module 4 is disposed on a Die Pad 7, and a molding compound 8 encapsulates all the devices.
In the driver chip package 1, the power switch devices 2 and 3 are respectively disposed at two sides of the control module 4, wherein the power switch devices are, for example, high power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Since the control module 4 and the adjacent power switch modules 2 and 3 are respectively disposed on different die carrying parts 7, 5 and 6, and the three carrying parts 5, 6 and 7 are not connected to each other, when the power switch modules 2 and 3 are overheated, an over-temperature protection circuit (not shown in fig. 1) in the control module 4 cannot detect the temperature changes of the power switch modules 2 and 3 in real time, and thus cannot stop or turn off (shut down) the operation of the power switch modules 2 and 3, and cannot protect high-power electronic modules until the high-power electronic modules are overheated to fail or even burn out.
To solve the above problem, when the power switch components 2 and 3 generate high temperature, the control module 4 must be able to detect the temperature of the power switch components 2 and 3 in real time, so that the over-temperature protection circuit in the control module 4 can work in real time to turn off the power switch components 2 and 3. Therefore, there is still a need to provide a driver chip package structure to solve the problems of the prior art.
Disclosure of Invention
In view of the problems encountered in the prior art, a primary objective of the present invention is to provide a driver chip package structure capable of sensing temperature in real time, wherein a power switch module and a control module are simultaneously disposed on a carrier, so that the temperature condition of the power switch module is transmitted to the control module in real time through the carrier made of metal, and the control module can sense the operating temperature of each power switch module in real time and turn off or turn on the power switch module according to the temperature change, thereby reducing the burning of each power switch module and the control module.
In accordance with the above object, an embodiment of the present invention provides a driver chip package structure, which includes a first die carrying portion, a second die carrying portion, a first power switch assembly, a second power switch assembly, and a control module, wherein the first die carrying portion and the second die carrying portion are disposed adjacent to each other, a gap is formed between the first die carrying portion and the second die carrying portion, the first power switch assembly is disposed on the first die carrying portion, the second power switch assembly is disposed on the second die carrying portion, the control module is at least partially disposed on the first die carrying portion and the second die carrying portion, and the package is used to package the first die carrying portion, the second die carrying portion, the first power switch assembly, the second power switch assembly, and the control module.
In accordance with the above object, an embodiment of the present invention provides a driver chip package structure, including a first die carrying portion, a second die carrying portion, a power supply metal line, a first power switch element, a second power switch element, and a control module, the second die carrying portion, the first power switch element, the second power switch element, and the control module, the first die carrying portion and the second die carrying portion being disposed adjacent to each other, a gap being provided between the first die carrying portion and the second die carrying portion, the power supply metal line being disposed between the first die carrying portion and the second die carrying portion, a gap being provided between the power supply metal line and the first die carrying portion, a gap being provided between the power supply metal line and the second die carrying portion, the first power switch element being disposed on the first die carrying portion, the second power switch element being disposed on the second die carrying portion, the control module being at least partially disposed on the first die carrying portion and the second die carrying portion, and the packaging body is used for packaging the first crystal grain carrying part, the second crystal grain carrying part, the power supply metal wire, the first power switch component, the second power switch component and the control module.
In one embodiment, the first power switch element is composed of a P-type mosfet and an N-type mosfet.
In one embodiment, the second power switch element is composed of a P-type mosfet and an N-type mosfet.
Based on the above, the present invention has at least one of the following advantages or effects. In an embodiment of the present invention, a gap is formed between the first die carrying portion and the second die carrying portion, and the control module is at least partially disposed on the first die carrying portion and the second die carrying portion, so that the driving chip package structure can transmit the temperature condition of the power switch assembly to the control module in real time through the power switch assembly and the control module which are simultaneously disposed on the carrying portions, so that the control module can sense the operating temperature of each power switch assembly in real time and turn off or turn on the power switch assembly according to the temperature change, thereby reducing the burnout of each power switch assembly and the control module. In addition, through different lead frame designs, the control module can be supported by the power supply metal wire, so that the control module is more stably arranged on the lead frame, and the yield of the packaging process is improved.
Drawings
Fig. 1 is a schematic cross-sectional view illustrating a driver chip package structure according to a prior art scheme;
fig. 2 is a schematic diagram of a lead frame of a driver chip package according to the teachings of the present invention;
FIG. 3 is a schematic top view of the driver chip package according to FIG. 2;
fig. 4 is a schematic cross-sectional view along line AA of the driver chip package according to fig. 3.
Fig. 5 is a schematic diagram of a lead frame illustrating a driver chip package structure according to the teachings of the present invention;
FIG. 6 is a schematic top view of the driver chip package according to FIG. 5; and
fig. 7 is a schematic cross-sectional view of the driver chip package along the BB line according to fig. 6.
Detailed Description
The foregoing and other technical and scientific aspects, features and utilities of the present invention will be apparent from the following detailed description of a preferred embodiment thereof, which is to be read in connection with the accompanying drawings. So that the manner in which the above recited features and advantages of the present invention can be understood and attained by a person skilled in the art, a more particular description of the invention, briefly summarized above, may be had by reference to the appended drawings, in which like reference numerals refer to like elements, features, and embodiments. The drawings referred to in the following description are for the purpose of illustrating the features of the invention and are not, and need not be, fully drawn to practice. The description of the embodiments refers to the technical content known to a person skilled in the art and is not presented here. Directional terms as referred to in the following examples, for example: up, down, left, right, front or rear, etc., are simply directions with reference to the drawings. Accordingly, the directional terminology is used for purposes of illustration and is in no way limiting.
Fig. 2 is a diagram of a lead frame illustrating a driver chip package structure according to the teachings of the present invention. Referring to fig. 2, the driving chip package structure 100 of the present embodiment includes a lead frame 10, the lead frame 10 is made of a metal material, the lead frame 10 includes a first die carrying portion 110 and a second die carrying portion 120, wherein the first die carrying portion 110 and the second die carrying portion 120 are disposed adjacent to each other, and a gap D1 is provided between the first die carrying portion 110 and the second die carrying portion 120. In this embodiment, the driving chip package structure 10 further includes a power terminal pin 101, an input terminal pin 102, a ground terminal pin 103, and output terminal pins 111 and 121, wherein the output terminal pin 111 is electrically connected to the first die carrier 110, and the output terminal pin 112 is electrically connected to the second die carrier 120. In addition, the driver chip package structure 10 further includes a package 300 for packaging the first die carrier 110, the second die carrier 120 and the leads, wherein the package 300 is formed by a packaging process of the prior art, which is not repeated herein.
Fig. 3 is a schematic top view of the driver chip package according to fig. 2, and fig. 4 is a schematic cross-sectional view of the driver chip package along line AA according to fig. 3. Referring to fig. 3 and 4, the driver chip package structure 100 further includes a first power switch element 210, a second power switch element 220, and a control module 230, wherein the first power switch element 210 is disposed on the first die carrier 110, the second power switch element 220 is disposed on the second die carrier 120, the control module 230 is at least partially disposed on the first die carrier 110 and the second die carrier 120, and the package 300 encapsulates the first die carrier 110, the second die carrier 120, the first power switch element 210, the second power switch element 220, and the control module 230. In this embodiment, the first power switch element 210, the second power switch element 220 and the control module 230 are adhered to the lead frame 10 by a conventional process or a conventional adhesive, which is not described in detail herein.
In this embodiment, the first power switch element 210 further includes a P-type mosfet 210P and an N-type mosfet 210N, and the second power switch element 220 further includes a P-type mosfet 220P and an N-type mosfet 220N, wherein the driver chip package structure 100 is formed by performing a conventional wire bonding process to form a conductive wire, and the elements are electrically connected to each other through the conductive wire to transmit signals or power. For example, the power terminal pins 101 and the pmos 210P are electrically connected to each other through wires (indicated by thin line segments in fig. 3), and the pmos 210P and the control module 230 are also electrically connected to each other through wires for transmitting signals or power, which is not repeated herein.
In this embodiment, the first die carrier 110 and the second die carrier 120 have a gap D1 therebetween, and the control module has a side length D2, wherein D1< D2, so that the control module 230 can at least partially contact the first die carrier 110 and the second die carrier 120. Since the control module 230 at least partially contacts the first die carrier 110 and the second die carrier 120, when the first power switch device 210 and the second power switch device 120 operate, an over-temperature protection circuit (not shown in fig. 3 and 4) in the control module 230 can detect the temperature change of the first die carrier 110 and the second die carrier 120 in real time, and determine whether to stop or close the operation of the first power switch device 210 and the second power switch device 220, so as to reduce the burning of the first power switch device 210, the second power switch device 220 and the control module 230, thereby protecting the driver chip package 100 and various high-power electronic devices using the driver chip package 100.
As can be seen from the cross-sectional view of fig. 4, through the design of the lead frame 10 of the present invention, the control module 230 can be simultaneously disposed on two adjacent die carrying portions 110 and 120 having the gap D1, so that the temperature condition of each power switch element can be transmitted to the control module 230 in real time through the metal die carrying portions 110 and 120, and the control module 230 can sense the operating temperature of each power switch element in real time and turn off or turn on the power switch element according to the temperature change, so as to reduce the burning of each power switch element and the control module 230.
Fig. 5 is a schematic diagram of a lead frame of a driver chip package according to the present disclosure, fig. 6 is a schematic diagram illustrating a top view of the driver chip package according to fig. 5, and fig. 7 is a schematic diagram illustrating a cross-sectional view of the driver chip package along a BB line according to fig. 6. Referring to fig. 5 to 7, a driver chip package structure 100A disclosed in the present embodiment is substantially the same as the driver chip package structure 100 disclosed in the embodiments of fig. 2 to 4, and the same components are denoted by the same reference numerals, which is not repeated herein. The main difference is that the lead frame 10 of the driver chip package structure 100A further includes a power metal line 130, and the power metal line 130 is disposed between the first die carrying portion 110 and the second die carrying portion 120. In this embodiment, the gap D3 is provided between the power supply wire 130 and the first die carrier 110, the gap D4 is provided between the power supply wire 130 and the second die carrier 120, and the gap D1 between the first die carrier 110 and the second die carrier 120, and the above-mentioned D3 and D4 are all smaller than the side length D2 of the control module, so that the control module 230 can be at least partially disposed on the first die carrier 110, the power supply wire 130, and the second die carrier 120. In the lead frame 10 of the present embodiment, the control module 230 may be further supported by the power metal line 130, so that the control module 230 is more stably disposed on the lead frame.
Similar to the driver chip package structure 100 in the embodiments of fig. 2 to 4, in the embodiment, when the first power switch device 210 and the second power switch device 120 operate, an over-temperature protection circuit (not shown in fig. 6 and 7) in the control module 230 can detect the temperature change of the first die carrying part 110 and the second die carrying part 120 in real time, and determine whether to stop or close the operation of the first power switch device 210 and the second power switch device 220, so as to reduce the burning of the first power switch device 210, the second power switch device 220 and the control module 230, and further protect the driver chip package structure 100A and various high-power electronic devices using the driver chip package structure 100A.
As can be seen from the cross-sectional view of fig. 7, according to the design of the lead frame 10 of the present invention, the control module 230 can be disposed on two adjacent die carrying portions 110 and 120 having the gap D1, and the control module 230 can be further supported by the power metal line 130. Therefore, the control module 230 can be more stably disposed on the lead frame 10, thereby improving the yield of the packaging process. In addition, the temperature condition of each power switch device can be transmitted to the control module 230 in real time through the die carrying parts 110 and 120 made of metal material, so that the control module 230 can sense the operating temperature of each power switch device in real time and turn off or turn on the power switch device according to the temperature change, thereby reducing the burning of each power switch device and the control module 230.
In summary, in the embodiments of the present invention, the first die carrying portion and the second die carrying portion are disposed adjacent to each other, a gap is provided between the first die carrying portion and the second die carrying portion, the first power switch element is disposed on the first die carrying portion, the second power switch element is disposed on the second die carrying portion, and the control module is at least partially disposed on the first die carrying portion and the second die carrying portion, so that, due to the special design of the lead frame, the control module can be simultaneously arranged on the two carrying parts with adjacent gaps, so that the temperature conditions of different power switch assemblies can be transmitted to the control module in real time through the carrying parts made of metal materials, the control module can sense the working temperature of each power switch assembly in real time, and the power switch components are closed or started according to the temperature change so as to reduce the burning condition of each power switch component and the control module. In addition, through different lead frame designs, the control module can be supported by the power supply metal wire, so that the control module is more stably arranged on the lead frame, and the yield of the packaging process is improved.
The above description is only a preferred embodiment of the present invention, and the scope of the present invention should not be limited thereby, and all the simple equivalent changes and modifications made by the claims and the specification of the present invention are still within the scope of the present invention. Moreover, it is not necessary for any embodiment or claim of the invention to address all of the objects, advantages, or features disclosed herein. In addition, the abstract section and the title are provided for assisting the patent document retrieval and are not intended to limit the scope of the present invention.
Claims (6)
1. A driver chip package structure, comprising:
a first die mounting section;
a second die mounting portion, the first die mounting portion and the second die mounting portion being disposed adjacent to each other, wherein a gap is provided between the first die mounting portion and the second die mounting portion;
a first power switch assembly disposed on the first die carrier;
a second power switch element disposed on the second die mounting portion;
a control module at least partially disposed on the first die mounting portion and the second die mounting portion; and
a package for packaging the first die carrying portion, the second die carrying portion, the first power switch assembly, the second power switch assembly and the control module.
2. The driver chip package of claim 1, wherein the first power switch element further comprises a P-type metal oxide semiconductor field effect transistor and an N-type metal oxide semiconductor field effect transistor.
3. The driver chip package of claim 1, wherein the second power switch element further comprises a P-type metal oxide semiconductor field effect transistor and an N-type metal oxide semiconductor field effect transistor.
4. A driver chip package structure, comprising:
a first die mounting section;
a second die mounting portion, the first die mounting portion and the second die mounting portion being disposed adjacent to each other, wherein a gap is provided between the first die mounting portion and the second die mounting portion;
a power supply wire disposed between the first die mounting portion and the second die mounting portion, wherein a gap is provided between the power supply wire and the first die mounting portion, and a gap is provided between the power supply wire and the second die mounting portion;
a first power switch assembly configured on the first die carrying part;
a second power switch assembly disposed on the second die carrier;
a control module at least partially disposed on the first die mounting portion, the power supply wire, and the second die mounting portion; and
a package for packaging the first die carrying part, the second die carrying part, the power supply metal line, the first power switch element, the second power switch element and the control module.
5. The driver chip package of claim 4, wherein the first power switch element further comprises a P-type metal oxide semiconductor field effect transistor and an N-type metal oxide semiconductor field effect transistor.
6. The driver chip package of claim 4, wherein the second power switch element further comprises a P-type metal oxide semiconductor field effect transistor and an N-type metal oxide semiconductor field effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911237338.8A CN112928091A (en) | 2019-12-05 | 2019-12-05 | Drive chip packaging structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911237338.8A CN112928091A (en) | 2019-12-05 | 2019-12-05 | Drive chip packaging structure |
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| CN112928091A true CN112928091A (en) | 2021-06-08 |
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| CN201911237338.8A Pending CN112928091A (en) | 2019-12-05 | 2019-12-05 | Drive chip packaging structure |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201402A (en) * | 2010-03-23 | 2011-09-28 | 三垦电气株式会社 | Semiconductor device |
| CN105529314A (en) * | 2012-01-19 | 2016-04-27 | 半导体元件工业有限责任公司 | Semiconductor device |
| CN106876392A (en) * | 2015-12-10 | 2017-06-20 | 力智电子股份有限公司 | Power metal oxide semiconductor transistor crystal grain with thermal sensing function and integrated circuit |
| CN206283418U (en) * | 2016-09-28 | 2017-06-27 | 三垦电气株式会社 | Inverted power module |
-
2019
- 2019-12-05 CN CN201911237338.8A patent/CN112928091A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102201402A (en) * | 2010-03-23 | 2011-09-28 | 三垦电气株式会社 | Semiconductor device |
| CN105529314A (en) * | 2012-01-19 | 2016-04-27 | 半导体元件工业有限责任公司 | Semiconductor device |
| CN106876392A (en) * | 2015-12-10 | 2017-06-20 | 力智电子股份有限公司 | Power metal oxide semiconductor transistor crystal grain with thermal sensing function and integrated circuit |
| CN206283418U (en) * | 2016-09-28 | 2017-06-27 | 三垦电气株式会社 | Inverted power module |
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