CN114068504A - Semiconductor module - Google Patents

Semiconductor module Download PDF

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Publication number
CN114068504A
CN114068504A CN202010883070.1A CN202010883070A CN114068504A CN 114068504 A CN114068504 A CN 114068504A CN 202010883070 A CN202010883070 A CN 202010883070A CN 114068504 A CN114068504 A CN 114068504A
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CN
China
Prior art keywords
control unit
micro control
semiconductor module
pad
rewiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010883070.1A
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Chinese (zh)
Inventor
铃木未生
大坂昇平
稻垣友和
李银花
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
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Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Publication of CN114068504A publication Critical patent/CN114068504A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0233—Structure of the redistribution layers
    • H01L2224/02333—Structure of the redistribution layers being a bump
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

The present invention relates to a semiconductor module. The invention provides a structure for rewiring a micro control unit and embedding the micro control unit in a semiconductor module. In addition, a high-performance semiconductor module that can cope with a large current is provided. A semiconductor module of the present invention has a micro control unit mounted therein, and the micro control unit includes a 1 st pad and a 2 nd pad based on rewiring. In addition, the micro control unit has a wiring area and a wiring inhibited area. Further, a power chip, a control chip, and a micro control unit are mounted on the lead frame, and the micro control unit is disposed at the center in the X direction and on a stage different from the power chip in the Y direction.

Description

Semiconductor module
Technical Field
The present invention relates to a semiconductor module, and more particularly, to a semiconductor module having a micro control unit mounted therein.
Background
A general semiconductor Module is called an Intelligent Power Module (IPM), and is formed by integrating various kinds of driver circuits, control circuits, protection circuits, and the like using Power chips (Power elements).
The semiconductor module is configured as one module using a plurality of single semiconductor devices, and can be mounted on a substrate of an electric product such as an air conditioner. In recent years, a semiconductor module is known in which a Micro Controller Unit (MCU) that performs various arithmetic operations is mounted in addition to a power chip and a control chip.
For example, patent document 1 discloses an electronic device in which a wiring board having electronic components (such as a micro control unit) mounted therein and a lead frame are integrally sealed with a mold resin.
Patent document 2 discloses a semiconductor element having a copper rewiring layer.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 2007-129175
Patent document 2: japanese patent No. 4068293
Disclosure of Invention
Problems to be solved by the invention
However, although the conventional technology can be used as an integrated electronic device, a wiring board is used, and thus many components are required.
For example, in a semiconductor module, when a micro control unit is mounted on a lead frame without using a wiring board, the micro control unit is difficult to form with the lead frame because electrode pads are small and arranged at a narrow pitch due to a small voltage and a small current. In particular, in a semiconductor module requiring power, the thickness of the lead frame is increased, and it is difficult to form the internal terminals of the lead frame at a narrow pitch.
Further, although the rewiring of the related art can be formed into a wafer-level chip-size package, a large pad capable of being connected by a thick wire for large-current use is required in order to be incorporated into a mold.
The present invention has been made to solve the above problems, and an object of the present invention is to provide a configuration in which a micro control unit is rewired and incorporated in a semiconductor module. In addition, the object is to provide a high-function semiconductor module which can cope with a large current.
Means for solving the problems
In order to solve the above problems, the present invention has the following configurations.
A semiconductor module of the present invention has a micro control unit mounted therein, and the micro control unit includes a 1 st pad and a 2 nd pad based on rewiring.
In addition, the micro control unit has a wiring area and a wiring inhibited area.
Further, a power chip, a control chip, and a micro control unit are mounted on the lead frame, and the micro control unit is disposed at the center in the X direction and on a stage different from the power chip in the Y direction.
Effects of the invention
According to the present invention, since the rewiring MCU having an increased pad size can be mounted on the lead frame without using a wiring board and thick wire bonding is performed, a high-function high-current semiconductor module having a small number of components and a micro control unit function can be provided.
Drawings
Fig. 1 is a plan view of a rewired MCU of embodiment 1 of the present invention.
Fig. 2 is a partial sectional view of a rewired MCU of embodiment 1 of the present invention.
Fig. 3 is an internal configuration diagram of a semiconductor module according to modification 1 of the present invention.
Description of the reference symbols
1: rewiring MCU
2: no. 1 bonding pad (Small bonding pad)
3: no. 2 bonding pad (big bonding pad)
4: rewiring
5: rewiring-inhibited area
6: MCU base plate
7: MCU pad
8: insulating layer
11: semiconductor module
12: power chip
13: control chip
14: electronic component
15: conductor (wire)
16: lead frame
17: molded part
18: external lead wire
19: digital grounding terminal
20: analog grounding terminal
Detailed Description
Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description.
(example 1)
A semiconductor module according to embodiment 1 of the present invention will be described. Fig. 1 is a top view of a rewired MCU (micro control unit). Fig. 2 is a partial cross-sectional view of the MCU (micro control unit) after rewiring. Fig. 3 is an internal structural view of the semiconductor module. Are schematic diagrams illustrating the present invention.
Fig. 1 is configured with a rewiring MCU1, a 1 st pad 2, a 2 nd pad 3, a rewiring 4, and a rewiring-prohibited area 5 as elements.
Fig. 2 illustrates a rewiring structure of the rewiring MCU1, in which the rewiring 4, the MCU substrate 6, the MCU pad 7, and the insulating layer 8 are laminated.
The micro control unit has a pad size (MCU pad 7) manufactured by a standard fine process, and is arranged along the outer circumference of the chip. The position and size of the pad are too small to be suitable for use in a large-current wiring diameter (wire bonding) used in a semiconductor module.
Therefore, after the wafer forming process of the micro control unit is finished, the rewiring MCU1 is formed through the rewiring process.
In the rewiring manufacturing of the micro control unit, the 1 st pad 2, which is a small pad having the same size as the pad size (MCU pad 7) inherent in the micro control unit, is formed on the basic MCU substrate 6 in a rewiring structure so as to have a pad size and a pad position suitable for incorporation in the semiconductor module.
The 1 st pad 2 is configured to be able to contact a probe for characteristic inspection even after rewiring. That is, the 1 st pad 2, which can be inspected for the MCU chip after the rewiring, is an inspection pad for MCU quality assurance.
Furthermore, the rewiring structure is used in the micro control unit to electrically extend the rewiring 4 from the original pad of the micro control unit, thereby forming the 2 nd pad 3 as a large pad. That is, the 1 st pad 2 (small pad) and the 2 nd pad 3 (large pad) are wired by the rewiring 4. The 2 nd pad 3 is a pad for assembling a semiconductor module.
The 2 nd pad (large pad) is used for connecting with each chip and frame of the semiconductor module, the 1 st pad (small pad) is used for micro control unit inspection, and the size of the 2 nd pad is larger than that of the 1 st pad. This can be manufactured in a laminated structure using the insulating layer 8. Since a general rewiring structure may be used, detailed description thereof is omitted.
Furthermore, a rewiring-inhibited region 5 is formed above the element sensitive to the parasitic capacitance. That is, the rewiring becomes a capacitive component with respect to the element formed in the micro controller chip, and may impair the original function of the micro controller. Rewiring is performed avoiding the area of the ROM, the memory and the oscillator of the RAM and the AD converter in the micro control unit. This ensures the quality of the semiconductor module.
Since the pad size is a semiconductor module using a power chip, a wire having a large wire diameter is generally used for high-current applications. On the other hand, since the micro-controller is low in voltage and current, a semiconductor package is mounted using a wire having a small wire diameter, and therefore, the pad of the micro-controller is generally about 1/6 in terms of area for a semiconductor module.
For example, the micro-control unit has an outer dimension of 2.4 × 2.4 × thickness of 0.4mm, a small pad of 0.04 × 0.06mm, a large pad of 0.12 × 0.12mm, a rewiring width of 0.03mm, and a rewiring-inhibited area of 1.0 × 0.8 mm.
Fig. 3 illustrates an internal structure of the semiconductor module 11. The micro control unit 1 is composed of a power chip 12, a control chip (drive circuit) 13, a micro control unit 1, electronic components 14, wires 15, a lead frame 16, a mold 17, external leads 18, a digital ground terminal 19, and an analog ground terminal 20.
The power chip 12 is a MOSFET, an IGBT, or an output transistor that can be combined with an FRD (fast recovery diode). The control chip 13 is an MIC and is a driver circuit. The electronic component 14 is a bootstrap diode or a temperature detection component, and may be omitted depending on the function of the semiconductor module.
The lead frame 16 may be made of a metal such as a copper material, or an insulating substrate may be used instead of the lead frame 16. The wire 15 is a wire bonding device, and electrically connects the chip and the chip to each other and to the lead frame. For example, materials such as Cu, Ag, Au, and Al can be used. Although not shown, solder, Ag paste, or paste may be used for bonding of each chip and electronic component.
The mold 17 resin-seals the lead frame 16 on which the respective members are mounted. In addition, the portion of the lead frame 16 protruding from the mold 17 is an external lead 18 serving as an external terminal.
These components are generally used for semiconductor modules, and the material and number thereof can be selected as appropriate.
The semiconductor module 11 of the present invention is additionally equipped with the rewiring MCU 1.
The rewired MCU1 is disposed near the center of the package. This can suppress variation in chip characteristics due to resin stress of the mold.
The rewiring MCU1 is disposed at a position away from the output power chip of the noise and heat generation source. That is, a power chip and a control chip are mounted on the lead frame, and the rewiring MCU1 is disposed at the center in the X direction and on a stage (stage) different from the power chip in the Y direction. The different stage is a Die Pad that is separated from a Die Pad (Die Pad) on which the power chip 12 is mounted in the lead frame 16.
In this case, when there are a plurality of control chips 13, they may be arranged on both sides in the X direction so as to sandwich the micro control unit (rewiring MCU 1). As shown in fig. 3, the power chip may be arranged in a T-shape in the Y direction with the control chip interposed therebetween. It is possible to suppress malfunction of the micro control unit due to noise or heat.
The ground terminal for the rewiring MCU1 is divided into a digital ground terminal 19 and an analog ground terminal 20.
In order to prevent malfunctions of analog circuits and digital circuits of the micro control unit, the grounds of the analog circuits and the digital circuits are output as independent terminals. The digital grounding terminal 19 is equipotential with the back of the MCU and the control chip. Separating the digital ground terminal 19 from the analog ground terminal 20. Thus, potential noise does not enter.
As another effect of the present invention, since the 1 st pad (small pad) of the micro control unit after rewiring is the same as the micro control unit electrode, it is possible to perform characteristic inspection by the contact with the single rewired micro control unit.
The 2 nd pad (large pad) can be subjected to thick wire bonding during module assembly, and the wiring inhibited region can provide a semiconductor module capable of suppressing malfunction due to parasitic capacitance.
The micro control unit is arranged in the center and on a platform different from the power chip, so that the semiconductor module which is not easily affected by external stress or heat can be provided. The same applies to the case where the power chip is disposed separately.
In the semiconductor module having the micro control unit built therein, the control unit is replaced with the micro control unit, so that bidirectional communication can be easily used for connection with the upper micro control unit. In other words, parameter changes inside the semiconductor module and monitoring of the motor operating state can be realized.
In addition, a high-dimensional motor control can be realized by using an arithmetic Unit of a CPU (Central Processing Unit). This makes it possible to change the normal sensorless sinusoidal control to sensorless vector control. That is, the use of the semiconductor module that can realize efficient motor control contributes to the reduction of the total cost of the home appliance.
In addition, various motor controls can be realized by rewriting software. Thus, it is possible to select various functions of a home appliance using a semiconductor module without newly manufacturing a control IC.
As described above, the embodiments for carrying out the present invention have been described, but it should be understood by those skilled in the art that various alternative embodiments and examples are possible in light of the disclosure.
The rewiring is formed by a plating process, and preferably the final metal surface (land surface) is covered with an oxidation-preventing metal. Such as nickel-gold. Thus, oxidation of the land surface can be prevented.
In addition, the lead frame on which the micro control unit chip is mounted may be replaced with an insulating heat dissipation substrate.
Further, the semiconductor module may include a heat sink (heat radiating fin). For example, the power chip may generate heat up to about 150 degrees, but since the micro control unit consumes a small current, heat is hardly generated.
The heat sink is preferably arranged directly below the power chip so that the heat sink is not involved directly below the micro control unit. Therefore, the heat transfer distance between the micro control unit and the power chip can be increased, and the misoperation of the micro control unit can be prevented. The heat sink may be used separately depending on the application, regardless of whether it is electrically insulated or electrically non-insulated.
In addition, as a product application, a semiconductor module incorporating a rewired MCU can be used as a driving device of a three-phase brushless DC motor used for an indoor FAN motor of an air conditioner or the like.
The motor control IC is responsible for motor driving in a case where space is limited, such as an indoor FAN of an air conditioner, and the MCU cannot be disposed in the vicinity of the motor due to the power supply configurations of the primary side and the secondary side. The motor control IC receives a rotation command from the MCU, and supplies a motor drive waveform corresponding to the rotor position identified by the magnetic element to the drive IC. The drive IC and the output transistor amplify the signal, and thereby can supply electric power for driving the motor to the motor.
In addition, the motor control IC feeds back a rotation signal of the motor recognized by the magnetic element to the MCU through an insulated photocoupler or the like. The MCU performs adjustment to eliminate the difference between the rotation signal and the rotation command, thereby enabling closed-loop control.
The driving target motor may be a brushless DC motor or a brushed DC motor having a sensor output, and the same effects are obtained.

Claims (5)

1. A semiconductor module having a micro control unit mounted therein,
the micro control unit is provided with a 1 st pad and a 2 nd pad based on rewiring.
2. The semiconductor module of claim 1,
the micro control unit is provided with a wiring area and a wiring prohibition area.
3. The semiconductor module according to claim 1 or 2,
the lead frame is mounted with a power chip, a control chip, and the micro control unit is disposed at the center in the X direction and on a stage different from the power chip in the Y direction.
4. The semiconductor module according to claim 1 or 2,
the micro control unit is provided with a lead from the 2 nd pad.
5. The semiconductor module according to claim 1 or 2,
the ground terminals of the power element and the micro control unit are divided into a digital ground terminal and an analog ground terminal and led out to an external lead.
CN202010883070.1A 2020-08-06 2020-08-28 Semiconductor module Pending CN114068504A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020134004A JP2022030192A (en) 2020-08-06 2020-08-06 Semiconductor module
JP2020-134004 2020-08-06

Publications (1)

Publication Number Publication Date
CN114068504A true CN114068504A (en) 2022-02-18

Family

ID=80233078

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010883070.1A Pending CN114068504A (en) 2020-08-06 2020-08-28 Semiconductor module

Country Status (2)

Country Link
JP (1) JP2022030192A (en)
CN (1) CN114068504A (en)

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Publication number Publication date
JP2022030192A (en) 2022-02-18

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