CN112913141A - 单片集成baw谐振器制作方法 - Google Patents
单片集成baw谐振器制作方法 Download PDFInfo
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- CN112913141A CN112913141A CN201880098865.2A CN201880098865A CN112913141A CN 112913141 A CN112913141 A CN 112913141A CN 201880098865 A CN201880098865 A CN 201880098865A CN 112913141 A CN112913141 A CN 112913141A
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- 229910052782 aluminium Inorganic materials 0.000 description 2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0471—Resonance frequency of a plurality of resonators at different frequencies
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0478—Resonance frequency in a process for mass production
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
一种单片集成BAW谐振器制作方法，包括：准备一压印模板(S1)；在衬底上形成掩膜材料层(S2)；采用所述压印模板向所述衬底方向按压所述掩膜材料层以形成掩膜凹槽(S3)；以形成掩膜凹槽的所述掩膜材料层为掩膜对所述衬底进行等离子刻蚀(S4)，在衬底形成与数个掩膜凹槽位置一一对应的凹槽；在所述数个凹槽内形成依次层叠的底层电极层、压电层以及顶层电极层，进而形成不同频率的谐振器(S5)；其中数个底层电极层厚度相同且均小于凹槽的深度，数个谐振器中至少有两个谐振器的压电层厚度不同，或者至少有两个谐振器的顶层电极层厚度不同。
Description
PCT国内申请，说明书已公开。
Claims (10)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2018/111496 WO2020082245A1 (zh) | 2018-10-23 | 2018-10-23 | 单片集成baw谐振器制作方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112913141A true CN112913141A (zh) | 2021-06-04 |
| CN112913141B CN112913141B (zh) | 2024-01-16 |
Family
ID=70330261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880098865.2A Active CN112913141B (zh) | 2018-10-23 | 2018-10-23 | 单片集成baw谐振器制作方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12028035B2 (zh) |
| EP (1) | EP3863176B1 (zh) |
| CN (1) | CN112913141B (zh) |
| WO (1) | WO2020082245A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113810014A (zh) * | 2021-09-23 | 2021-12-17 | 武汉敏声新技术有限公司 | 叉指型体声波谐振器及滤波器 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115694387A (zh) * | 2022-10-26 | 2023-02-03 | 河源市艾佛光通科技有限公司 | 一种体声波滤波器及其制作方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040172798A1 (en) * | 2003-03-07 | 2004-09-09 | Ruby Richard C. | Manufacturing process for thin film bulk acoustic resonator (FBAR) filters |
| CN103873010A (zh) * | 2014-03-17 | 2014-06-18 | 电子科技大学 | 一种压电薄膜体声波谐振器及其制备方法 |
| CN104993804A (zh) * | 2015-06-24 | 2015-10-21 | 上海芯赫科技有限公司 | 一种mems谐振结构的加工方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6420202B1 (en) * | 2000-05-16 | 2002-07-16 | Agere Systems Guardian Corp. | Method for shaping thin film resonators to shape acoustic modes therein |
| US6377137B1 (en) * | 2000-09-11 | 2002-04-23 | Agilent Technologies, Inc. | Acoustic resonator filter with reduced electromagnetic influence due to die substrate thickness |
| US6518860B2 (en) | 2001-01-05 | 2003-02-11 | Nokia Mobile Phones Ltd | BAW filters having different center frequencies on a single substrate and a method for providing same |
| US6874211B2 (en) * | 2001-03-05 | 2005-04-05 | Agilent Technologies, Inc. | Method for producing thin film bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method |
| US6566979B2 (en) | 2001-03-05 | 2003-05-20 | Agilent Technologies, Inc. | Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method |
| JP2003229743A (ja) * | 2001-11-29 | 2003-08-15 | Murata Mfg Co Ltd | 圧電フィルタ、通信装置および圧電フィルタの製造方法 |
| US6657517B2 (en) | 2001-12-20 | 2003-12-02 | Agere Systems, Inc. | Multi-frequency thin film resonators |
| JP2008085562A (ja) * | 2006-09-27 | 2008-04-10 | Renesas Technology Corp | 弾性波フィルタおよびその製造方法 |
| US7863071B1 (en) * | 2007-08-21 | 2011-01-04 | Rf Micro Devices, Inc. | Combined micro-electro-mechanical systems device and integrated circuit on a silicon-on-insulator wafer |
| JP5352975B2 (ja) * | 2007-08-31 | 2013-11-27 | オムロン株式会社 | 素子集合体及びその製造方法 |
| US20100277034A1 (en) * | 2009-03-11 | 2010-11-04 | Rajarishi Sinha | Array of baw resonators with mask controlled resonant frequencies |
| US9082625B2 (en) * | 2013-12-11 | 2015-07-14 | International Business Machines Corporation | Patterning through imprinting |
| CN105958956B (zh) * | 2016-04-26 | 2019-05-14 | 电子科技大学 | 一种薄膜体声波谐振器及其制备方法 |
| US10038422B2 (en) * | 2016-08-25 | 2018-07-31 | Qualcomm Incorporated | Single-chip multi-frequency film bulk acoustic-wave resonators |
| CN108449063A (zh) * | 2018-03-16 | 2018-08-24 | 上海瓷金电子科技有限公司 | 一种塑料封装石英晶体谐振器及其制备方法 |
-
2018
- 2018-10-23 WO PCT/CN2018/111496 patent/WO2020082245A1/zh unknown
- 2018-10-23 CN CN201880098865.2A patent/CN112913141B/zh active Active
- 2018-10-23 EP EP18937563.7A patent/EP3863176B1/en active Active
-
2021
- 2021-04-22 US US17/237,611 patent/US12028035B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040172798A1 (en) * | 2003-03-07 | 2004-09-09 | Ruby Richard C. | Manufacturing process for thin film bulk acoustic resonator (FBAR) filters |
| CN103873010A (zh) * | 2014-03-17 | 2014-06-18 | 电子科技大学 | 一种压电薄膜体声波谐振器及其制备方法 |
| CN104993804A (zh) * | 2015-06-24 | 2015-10-21 | 上海芯赫科技有限公司 | 一种mems谐振结构的加工方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113810014A (zh) * | 2021-09-23 | 2021-12-17 | 武汉敏声新技术有限公司 | 叉指型体声波谐振器及滤波器 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020082245A1 (zh) | 2020-04-30 |
| US12028035B2 (en) | 2024-07-02 |
| CN112913141B (zh) | 2024-01-16 |
| EP3863176A4 (en) | 2021-10-27 |
| EP3863176A1 (en) | 2021-08-11 |
| EP3863176B1 (en) | 2022-12-07 |
| US20210242848A1 (en) | 2021-08-05 |
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