CN112885932B - 一种微型led显示芯片制作方法 - Google Patents
一种微型led显示芯片制作方法 Download PDFInfo
- Publication number
- CN112885932B CN112885932B CN202110071026.5A CN202110071026A CN112885932B CN 112885932 B CN112885932 B CN 112885932B CN 202110071026 A CN202110071026 A CN 202110071026A CN 112885932 B CN112885932 B CN 112885932B
- Authority
- CN
- China
- Prior art keywords
- epoxy resin
- epitaxial wafer
- manufacturing
- layer
- resin layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 52
- 239000003822 epoxy resin Substances 0.000 claims abstract description 72
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 72
- 238000001259 photo etching Methods 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 22
- 238000000576 coating method Methods 0.000 claims abstract description 21
- 239000011248 coating agent Substances 0.000 claims abstract description 20
- 238000005516 engineering process Methods 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 45
- 229920002120 photoresistant polymer Polymers 0.000 claims description 36
- 238000005520 cutting process Methods 0.000 claims description 35
- 238000009616 inductively coupled plasma Methods 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- 238000000227 grinding Methods 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 239000010931 gold Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000049 pigment Substances 0.000 claims description 10
- 238000010894 electron beam technology Methods 0.000 claims description 9
- 239000011259 mixed solution Substances 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 238000011010 flushing procedure Methods 0.000 claims description 6
- 238000001771 vacuum deposition Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 239000000243 solution Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002905 metal composite material Substances 0.000 claims description 3
- 238000007781 pre-processing Methods 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 239000004579 marble Substances 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 238000010408 sweeping Methods 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 60
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110071026.5A CN112885932B (zh) | 2021-01-19 | 2021-01-19 | 一种微型led显示芯片制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110071026.5A CN112885932B (zh) | 2021-01-19 | 2021-01-19 | 一种微型led显示芯片制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN112885932A CN112885932A (zh) | 2021-06-01 |
CN112885932B true CN112885932B (zh) | 2023-07-04 |
Family
ID=76049955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110071026.5A Active CN112885932B (zh) | 2021-01-19 | 2021-01-19 | 一种微型led显示芯片制作方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112885932B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113990986B (zh) * | 2021-09-29 | 2023-10-13 | 华灿光电(浙江)有限公司 | 垂直结构的微型发光二极管芯片及其制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5247109B2 (ja) * | 2007-10-05 | 2013-07-24 | パナソニック株式会社 | 半導体発光装置およびそれを用いる照明装置ならびに半導体発光装置の製造方法 |
KR20140048071A (ko) * | 2011-09-12 | 2014-04-23 | 미쓰비시 가가꾸 가부시키가이샤 | 발광 다이오드 소자 |
JP5684751B2 (ja) * | 2012-03-23 | 2015-03-18 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP2013232478A (ja) * | 2012-04-27 | 2013-11-14 | Toshiba Corp | 半導体発光装置及びその製造方法 |
CN105161605B (zh) * | 2015-07-21 | 2017-11-24 | 山东浪潮华光光电子股份有限公司 | 一种可实现高效封装的GaN基LED芯片制备方法 |
CN110034212A (zh) * | 2019-04-26 | 2019-07-19 | 中国科学院长春光学精密机械与物理研究所 | 垂直结构条形Micro-LED的制备方法及转印方法 |
KR20210005454A (ko) * | 2019-07-05 | 2021-01-14 | 삼성전자주식회사 | 발광소자 패키지 제조방법 및 이를 이용한 디스플레이 패널 제조방법 |
-
2021
- 2021-01-19 CN CN202110071026.5A patent/CN112885932B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN112885932A (zh) | 2021-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10777714B2 (en) | Encapsulated emissive element for fluidic assembly | |
US20160104695A1 (en) | Transfer-bonding method for the light emitting device and light emitting device array | |
TW502463B (en) | Image display unit and method of producing image display unit | |
CN109923683B (zh) | 微型发光二极管及其制作方法 | |
CN107924964A (zh) | 发光面板及制备此类发光面板的方法 | |
CN103560186B (zh) | 一种倒装纳米led芯片及其制备方法 | |
CN102106004A (zh) | 包含窗口层和导光结构的半导体发光器件 | |
CN100546006C (zh) | 蚀刻硅的改进方法 | |
CN112885932B (zh) | 一种微型led显示芯片制作方法 | |
US11183534B2 (en) | Light emitting device with small footprint | |
US20220238751A1 (en) | Method of manufacturing a hybrid device | |
CN106409168A (zh) | 基于无机微米led阵列的全彩色微显示芯片及其制备方法 | |
CN103035785B (zh) | 发光二极管的制备方法 | |
US11901493B2 (en) | Semiconductor devices incorporating quantum dots | |
JP2003209295A (ja) | 電子部品及びその製造方法、これを用いた画像表示装置 | |
CN116404027A (zh) | 一种Micro-LED微显示器及其制备方法 | |
CN113299803A (zh) | 一种Micro LED芯片单体器件的制备方法、显示模块及显示装置 | |
JP2002344028A (ja) | 素子の転写方法及び画像表示装置の製造方法 | |
US20150179894A1 (en) | Methods of locating differently shaped or differently sized led die in a submount | |
US20150144968A1 (en) | Method of stress induced cleaving of semiconductor devices | |
CN107768491B (zh) | 用于手环的MicroLED显示模块制作方法 | |
CN214898480U (zh) | 一种Micro LED芯片单体器件、显示模块及显示装置 | |
CN102623589B (zh) | 一种垂直结构的半导体发光器件制造方法 | |
CN114807840A (zh) | 一种砷化镓基led芯片透明导电层测试点的制备方法 | |
CN204441283U (zh) | 一种并联结构的集成led芯片 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 332000 1st floor, No.2 workshop, electronic science and Technology Park, west of science and technology 1st Avenue and south of torch 4th Road, national youth entrepreneurship base, Gongqing City, Jiujiang City, Jiangxi Province Applicant after: Jiangxi Ruixin Microelectronics Technology Co.,Ltd. Address before: 332000 1st floor, No.2 workshop, electronic science and Technology Park, west of science and technology 1st Avenue and south of torch 4th Road, national youth entrepreneurship base, Gongqing City, Jiujiang City, Jiangxi Province Applicant before: Jiangxi Yichuang Junrong Photoelectric Technology Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant |