CN112885912A - 一种光电转换装置 - Google Patents

一种光电转换装置 Download PDF

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CN112885912A
CN112885912A CN202110022987.7A CN202110022987A CN112885912A CN 112885912 A CN112885912 A CN 112885912A CN 202110022987 A CN202110022987 A CN 202110022987A CN 112885912 A CN112885912 A CN 112885912A
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尤小月
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Abstract

一种光电转换装置，包括：P‑型半导体衬底；N‑型光电二极管掺杂区，P+型空穴累积区，N型电荷保持区，P型电荷阻挡区，位于栅极绝缘层上方的传输栅电极、倍增栅电极、读取栅电极，复位栅电极结构，悬浮掺杂区，包括N+型子悬浮掺杂区和N‑型子悬浮掺杂区，所述N+型子悬浮掺杂区包围所述N‑型子悬浮掺杂区，N+型复位漏极区，可有效了N‑型光电二极管掺杂区至N+型复位漏极区的漏电，提高电学性能。

Description

一种光电转换装置
技术领域
本发明涉及半导体制造领域，尤其涉及一种光电转换装置及其形成方法。
背景技术
光电转换装置的原理是光子将能量传递给电子使其运动从而形成电流，可用于固态成像装置。被摄景物通过摄像机的光学系统在光电靶上成像，由于光像各点亮度不同，因而使靶面各单元受光照的强度不同，导致靶面各单元的电阻值不同。与较亮像素对应的靶单元阻值较小，与较暗像素对应的靶单元阻值较大，这样一幅图像上各像素的不同亮度就表现为靶面上各单元的不同电阻值，原来按照明暗分布的“光像”就变成了相应的“电像”。
然而，现有的图像传感器的电学性能仍有待提高。
发明内容
本发明解决的问题是提供一种光电转换装置及其形成方法，可获得优良的电学性能，应用于固态成像装置，以提高稳定性。
为解决上述问题，本发明提供一种光电转换装置，包括：P-型半导体衬底；
N-型光电二极管掺杂区，设置于所述P-型半导体衬底中，P+型空穴累积区设置在所述N-型光电二极管掺杂区和所述P-型半导体衬底的上表面之间；
N型电荷保持区，设置于所述P-型半导体衬底中，P型电荷阻挡区设置在所述N型电荷保持区和所述P-型半导体衬底的上表面之间；
位于所述P型电荷阻挡区上方的栅极绝缘层，以及位于所述栅极绝缘层上方的传输栅电极、倍增栅电极、读取栅电极；
复位栅电极结构，设置于所述P-型半导体衬底中，包括复位栅电极和复位栅电极绝缘层；
悬浮掺杂区，设置于所述P-型半导体衬底中，包括N+型子悬浮掺杂区和N-型子悬浮掺杂区，所述N+型子悬浮掺杂区包围所述N-型子悬浮掺杂区；
N+型复位漏极区，设置于所述P-型半导体衬底中；
所述N+型复位漏极区和所述N型电荷保持区分别位于所述复位栅电极结构的两侧，所述悬浮掺杂区位于所述复位栅电极结构的下方，所述悬浮掺杂区和所述N-型光电二极管掺杂区分别位于所述N型电荷保持区的两侧。
可选的，所述N+型子悬浮掺杂区和所述N-型子悬浮掺杂区为磷杂质掺杂，所述N+型子悬浮掺杂区的杂质浓度为5.0×1017cm-3，所述N-型子悬浮掺杂区的杂质浓度为5.0×1016cm-3。
可选的，所述N+型复位漏极区电连接电源线。
可选的，所述N-型光电二极管掺杂区、所述N型电荷保持区、所述悬浮掺杂区、所述N+型复位漏极区彼此相互分立。
可选的，所述复位栅电极结构的深度大于所述N+型复位漏极区的深度。
可选的，所述复位栅电极绝缘层包围所述复位栅电极的底部和侧壁。
本发明还提供一种固态成像装置，包括上述的光电转换装置。
本发明还提供一种光电转换装置的形成方法，包括：提供P-型半导体衬底；
在所述P-型半导体衬底形成一沟槽，在所述沟槽底部的P-型半导体衬底进行N型掺杂，形成悬浮掺杂区，所述悬浮掺杂区包括N+型子悬浮掺杂区和N-型子悬浮掺杂区，所述N+型子悬浮掺杂区包围所述N-型子悬浮掺杂区；
在所述沟槽的底部和侧面形成复位栅电极绝缘层，在所述复位栅电极绝缘层上形成复位栅电极，所述复位栅电极绝缘层与所述复位栅电极组成复位栅电极结构；
在所述复位栅电极结构两侧的P-型半导体衬底中分别进行N型掺杂，形成N型电荷保持区和N+型复位漏极区，在所述N型电荷保持区相对于所述复位栅电极结构的另一侧进行N型掺杂，形成N-型光电二极管掺杂区；
在所述N-型光电二极管掺杂区和所述P-型半导体衬底的上表面之间进行P型掺杂，形成P+型空穴累积区；
在所述N型电荷保持区和所述P-型半导体衬底的上表面之间进行P型掺杂，形成P型电荷阻挡区；
在所述P型电荷阻挡区上方形成栅极绝缘层，在所述栅极绝缘层上方形成传输栅电极、倍增栅电极、读取栅电极。
可选的，所述N+型子悬浮掺杂区和所述N-型子悬浮掺杂区为磷杂质掺杂，所述N+型子悬浮掺杂区的杂质浓度为5.0×1017cm-3，所述N-型子悬浮掺杂区的杂质浓度为5.0×1016cm-3。
可选的，所述N+型复位漏极区电连接电源线。
可选的，所述N-型光电二极管掺杂区、所述N型电荷保持区、所述悬浮掺杂区、所述N+型复位漏极区彼此相互分立。
可选的，所述复位栅电极结构的深度大于所述N+型复位漏极区的深度。
可选的，可选的，所述复位栅电极绝缘层包围所述复位栅电极的底部和侧壁。
与现有技术相比，本发明的技术方案具有以下优点：
本发明技术方案提供的光电转换装置中，复位栅电极结构对应的复位晶体管的作用包括：N+型复位漏极区需要一直连接电源线，使得在清空时序步骤中，将复位栅电极结构对应的复位晶体管开启，对光电二极管中的电荷进行清空。在曝光时序步骤和读出时序步骤中，复位栅电极结构对应的复位晶体管需要关闭，避免清空光电二极管积累的光生电荷以及避免影响读出信号。复位栅电极结构制作在半导体衬底中，这样通过设置复位栅电极结构和N+型复位漏极区之间的深度关系，能够使N-型光电二极管掺杂区至N+型复位漏极区的沟道长度变长，这样有效抑制了N-型光电二极管掺杂区至N+型复位漏极区的漏电。
进一步，由于所述复位栅电极结构下方的半导体衬底中具有悬浮掺杂区，使得在悬浮掺杂区和N+型复位漏极区之间形成势垒，这样在N-型光电二极管掺杂区至N+型复位漏极区之间有两个势垒，一个是N-型光电二极管掺杂区至悬浮掺杂区之间的势垒，另一个是悬浮掺杂区和N+型复位漏极区之间的势垒。即使在N+型复位漏极区连接的电源线的电压较大的情况下，由于设置了悬浮掺杂区，使得在同等较大的电源线的电压的情况下，N-型光电二极管掺杂区至N+型复位漏极区之间的势垒的最高点提高，进一步，将悬浮掺杂区设置成包括N+型子悬浮掺杂区和N-型子悬浮掺杂区，所述N+型子悬浮掺杂区包围所述N-型子悬浮掺杂区的结构，该最高点会被进一步提高，也就是说，N-型光电二极管掺杂区至悬浮掺杂区之间的势垒的最高点增大，这样进一步抑制了N-型光电二极管掺杂区至悬浮掺杂区的漏电。其次，即使在N-型光电二极管掺杂区中的电子越过N-型光电二极管掺杂区至悬浮掺杂区之间的势垒，由于悬浮掺杂区和N+型复位漏极区还存在势垒，因此那么这部分电子也不会直接流到N+型复位漏极区，而是会积累在悬浮掺杂区中，进一步，设置N+型子悬浮掺杂区和N-型子悬浮掺杂区，可积累的电子容量进一步增大，这样进一步抑制了N-型光电二极管掺杂区至N+型复位漏极区的漏电。因此对于改善暗光拍摄时图像质量有较好的效果。
附图说明
图1至图4是本发明中光电转换装置形成方法的示意图。
具体实施方式
将参考附图描述本公开的实施例。在下文中，将通过相同的附图标记表示附图中相互对应的部分。
图1至图4是本发明中光电转换装置形成方法的示意图。
如图1所示，提供一P-型半导体衬底10，在所述P-型半导体衬底10形成一沟槽。
如图2所示，在所述沟槽底部的P-型半导体衬底10进行N型掺杂，形成悬浮掺杂区13，所述N型掺杂采用诸如磷的杂质进行掺杂；所述悬浮掺杂区13包括N+型子悬浮掺杂区131和N-型子悬浮掺杂区132，所述N+型子悬浮掺杂区131包围所述N-型子悬浮掺杂区132；所述N+型子悬浮掺杂区131的杂质浓度为5.0×1017cm-3，所述N-型子悬浮掺杂区132的杂质浓度为5.0×1016cm-3。上述掺杂浓度可有效提高N-型光电二极管掺杂区至N+型复位漏极区之间的势垒，抑制N-型光电二极管掺杂区至N+型复位漏极区的漏电。
在所述沟槽的底部和侧面形成复位栅电极绝缘层26，在所述复位栅电极绝缘层26上形成复位栅电极25，所述复位栅电极绝缘层26包围所述复位栅电极25的底部和侧壁，所述复位栅电极绝缘层26与所述复位栅电极25组成复位栅电极结构。
如图3所示，在所述复位栅电极结构两侧的P-型半导体衬底10中分别进行N型掺杂，形成N型电荷保持区12和N+型复位漏极区14，在所述N型电荷保持区12相对于所述复位栅电极结构的另一侧进行N型掺杂，形成N-型光电二极管掺杂区11，所述N-型光电二极管掺杂区、所述N型电荷保持区、所述悬浮掺杂区、所述N+型复位漏极区彼此相互分立。
所述N型掺杂采用诸如磷的杂质进行掺杂，所述N型电荷保持区12的浓度高于所述N-型光电二极管掺杂区11，所述N型电荷保持区12表现出比围绕所述N型电荷保持区12的P-型半导体衬底10大的电位。入射到所述N-型光电二极管掺杂区11上的光由于光电转换被转换成了电荷，通过转移手段将所述N-型光电二极管掺杂区11中产生的电荷转移至所述N型电荷保持区12，之后，所述N型电荷保持区12暂时保持电荷，从所述N型电荷保持区12传送的电荷改变了悬浮掺杂区13的电位，所述N+型复位漏极区14电连接电源线， 以提供指定电位，在清空时序步骤中，将复位栅电极结构对应的复位晶体管开启，对光电二极管中的电荷进行清空，即复位操作将悬浮掺杂区13中存储的电荷清除至N+型复位漏极区14。悬浮掺杂区13保 持与N+型复位漏极区14相同的电位。
在所述N-型光电二极管掺杂区11和所述P-型半导体衬底10的上表面之间进行P型掺杂，形成P+型空穴累积区15。
在所述N型电荷保持区12和所述P-型半导体衬底10的上表面之间进行P型掺杂，形成P型电荷阻挡区16。所述N型电荷保持区12使得在所述P-型半导体衬底10的厚度方向上的电位被整形成量子阱，该量子阱的基底对应于所述N型电荷保持区12。
由于设置了悬浮掺杂区，使得在同等较大的电源线的电压的情况下，N-型光电二极管掺杂区至N+型复位漏极区之间的势垒的最高点提高，进一步，将悬浮掺杂区设置成包括N+型子悬浮掺杂区和N-型子悬浮掺杂区，所述N+型子悬浮掺杂区包围所述N-型子悬浮掺杂区的结构，该最高点会被进一步提高，也就是说，N-型光电二极管掺杂区至悬浮掺杂区之间的势垒的最高点增大，这样进一步抑制了N-型光电二极管掺杂区至悬浮掺杂区的漏电。其次，即使在N-型光电二极管掺杂区中的电子越过N-型光电二极管掺杂区至悬浮掺杂区之间的势垒，由于悬浮掺杂区和N+型复位漏极区还存在势垒，因此那么这部分电子也不会直接流到N+型复位漏极区，而是会积累在悬浮掺杂区中，进一步，设置N+型子悬浮掺杂区和N-型子悬浮掺杂区，可积累的电子容量进一步增大，这样进一步抑制了N-型光电二极管掺杂区至N+型复位漏极区的漏电。
所述复位栅电极结构制作在所述P-型半导体衬底中，所述复位栅电极结构的深度大于所述N+型复位漏极区的深度，通过设置复位栅电极结构和N+型复位漏极区之间的深度关系，能够使N-型光电二极管掺杂区至N+型复位漏极区的沟道长度变长，这样有效抑制了N-型光电二极管掺杂区至N+型复位漏极区的漏电。
如图4所示，在所述P型电荷阻挡区16上方形成栅极绝缘层24，在所述栅极绝缘层上方形成传输栅电极21、倍增栅电极22、读取栅电极23。
相应的，本发明还提供一种采用上述方法形成的光电转换装置，请参考图4，包括：
P-型半导体衬底10；
N-型光电二极管掺杂区11，设置于所述P-型半导体衬底10中，P+型空穴累积区15设置在所述N-型光电二极管掺杂区11和所述P-型半导体衬底10的上表面之间；
N型电荷保持区12，设置于所述P-型半导体衬底10中，P型电荷阻挡区16设置在所述N型电荷保持区12和所述P-型半导体衬底10的上表面之间；
位于所述P型电荷阻挡区16上方的栅极绝缘层24，以及位于所述栅极绝缘层上方的传输栅电极21、倍增栅电极22、读取栅电极23；
复位栅电极结构，设置于所述P-型半导体衬底10中，包括复位栅电极25和复位栅电极绝缘层26；
悬浮掺杂区13，设置于所述P-型半导体衬底中，包括N+型子悬浮掺杂区131和N-型子悬浮掺杂区132，所述N+型子悬浮掺杂区包围所述N-型子悬浮掺杂区；
N+型复位漏极区14，设置于所述P-型半导体衬底10中；
所述N+型复位漏极区14和所述N型电荷保持区12分别位于所述复位栅电极结构的两侧，所述悬浮掺杂区13位于所述复位栅电极结构的下方，所述悬浮掺杂区13和所述N-型光电二极管掺杂区11分别位于所述N型电荷保持区12的两侧。
所述N+型子悬浮掺杂区131和所述N-型子悬浮掺杂区132为磷杂质掺杂，所述N+型子悬浮掺杂区131的杂质浓度为5.0×1017cm-3，所述N-型子悬浮掺杂区132的杂质浓度为5.0×1016cm-3。
所述N+型复位漏极区14电连接电源线。
所述N-型光电二极管掺杂区11、所述N型电荷保持区12、所述悬浮掺杂区13、所述N+型复位漏极区14彼此相互分立。
所述复位栅电极结构的深度大于所述N+型复位漏极区14的深度。
所述复位栅电极绝缘层包围所述复位栅电极的底部和侧壁。
本发明还提供一种固态成像装置，包括上述的光电转换装置。
尽管已经参考本公开的实施例描述了本公开，但要理解本公开不限于实施例和构造。本公开意在覆盖各种修改和等价布置。此外，除却所述的各种组合和配置之外，其它包括更多、更少的元件或者只包括单个元件的组合和配置也落在本公开的精神和范围内。

Claims (7)

1.一种光电转换装置，其特征在于，包括：
P-型半导体衬底；
N-型光电二极管掺杂区，设置于所述P-型半导体衬底中，P+型空穴累积区设置在所述N-型光电二极管掺杂区和所述P-型半导体衬底的上表面之间；
N型电荷保持区，设置于所述P-型半导体衬底中，P型电荷阻挡区设置在所述N型电荷保持区和所述P-型半导体衬底的上表面之间；
位于所述P型电荷阻挡区上方的栅极绝缘层，以及位于所述栅极绝缘层上方的传输栅电极、倍增栅电极、读取栅电极；
复位栅电极结构，设置于所述P-型半导体衬底中，包括复位栅电极和复位栅电极绝缘层；
悬浮掺杂区，设置于所述P-型半导体衬底中，包括N+型子悬浮掺杂区和N-型子悬浮掺杂区，所述N+型子悬浮掺杂区包围所述N-型子悬浮掺杂区；
N+型复位漏极区，设置于所述P-型半导体衬底中；
所述N+型复位漏极区和所述N型电荷保持区分别位于所述复位栅电极结构的两侧，所述悬浮掺杂区位于所述复位栅电极结构的下方，所述悬浮掺杂区和所述N-型光电二极管掺杂区分别位于所述N型电荷保持区的两侧。
2.根据权利要求1所述的光电转换装置，其特征在于，所述N+型子悬浮掺杂区和所述N-型子悬浮掺杂区为磷杂质掺杂，所述N+型子悬浮掺杂区的杂质浓度为5.0×1017cm-3，所述N-型子悬浮掺杂区的杂质浓度为5.0×1016cm-3。
3.根据权利要求1所述的光电转换装置，其特征在于，所述N+型复位漏极区电连接电源线。
4.根据权利要求1所述的光电转换装置，其特征在于，所述N-型光电二极管掺杂区、所述N型电荷保持区、所述悬浮掺杂区、所述N+型复位漏极区彼此相互分立。
5.根据权利要求1所述的光电转换装置，其特征在于，所述复位栅电极结构的深度大于所述N+型复位漏极区的深度。
6.根据权利要求1所述的光电转换装置，其特征在于，所述复位栅电极绝缘层包围所述复位栅电极的底部和侧壁。
7.一种固态成像装置，包括如权利要求1-6所述的光电转换装置。
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