CN112864137A - 封装器件 - Google Patents

封装器件 Download PDF

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Publication number
CN112864137A
CN112864137A CN202011320455.3A CN202011320455A CN112864137A CN 112864137 A CN112864137 A CN 112864137A CN 202011320455 A CN202011320455 A CN 202011320455A CN 112864137 A CN112864137 A CN 112864137A
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China
Prior art keywords
module
package
die
thermal
dielectric layer
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Pending
Application number
CN202011320455.3A
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English (en)
Inventor
余振华
刘重希
蔡豪益
郭庭豪
赖季晖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd
Publication of CN112864137A publication Critical patent/CN112864137A/zh
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Abstract

本公开的各种实施例涉及一种封装器件。实施例包含第一封装组件，第一封装组件包含第一集成电路管芯和至少部分地包围第一集成电路管芯的第一密封体。器件还包含位于第一密封体上且耦合到第一集成电路管芯的重布线结构。器件还包含耦合到第一集成电路管芯的第一热模块。器件还包含接合到第一封装组件的第二封装组件，第二封装组件包含附接到第一封装组件的电源模块，电源模块包含有源器件。器件还包含耦合到电源模块的第二热模块。器件还包含从第二热模块的顶部表面延伸到第一热模块的底部表面的机械支架，机械支架物理接触第一热模块和第二热模块。

Description

封装器件
背景技术
半导体行业已经由于多种电子组件(例如，晶体管、二极管、电阻器、电容器等)的集成密度的持续改进而经历快速增长。主要来说，最小特征大小的反复减小已经带来集成密度的改进，这允许将更多组件集成到给定区域中。随着对缩小的电子器件的需求的增长，对半导体管芯的更小和更有创造性的封装技术的需求也已经出现。这些封装系统的实例是叠层封装(package-on-package；PoP)技术。在PoP器件中，顶部半导体封装堆叠在底部半导体封装的顶部上以提供高水平的集成和组件密度。PoP技术通常能够在印刷电路板(printed circuit board；PCB)上生产功能增强和小占据面积的半导体器件。
发明内容
本申请的一些实施例提供一种封装器件，包括：第一封装组件，包括：第一集成电路管芯；第一密封体，至少部分地包围所述第一集成电路管芯；以及重布线结构，位于所述第一密封体上且耦合到所述第一集成电路管芯；第一热模块，耦合到所述第一集成电路管芯；第二封装组件，接合到所述第一封装组件，所述第二封装组件包括：电源模块，附接到所述第一封装组件，所述电源模块包括有源器件；第二热模块，耦合到所述电源模块；以及机械支架，从所述第二热模块的顶部表面延伸到所述第一热模块的底部表面，所述机械支架物理接触所述第一热模块和所述第二热模块。
附图说明
结合附图阅读以下具体实施方式会最好地理解本公开的各方面。应注意，根据业界中的标准惯例，各种特征未按比例绘制。实际上，为了论述清楚起见，可任意增大或减小各种特征的尺寸。
图1到图19示出根据一些实施例的在用于形成封装的工艺期间的中间步骤的横截面视图。
图20示出根据一些实施例的在用于形成封装器件的工艺期间的中间步骤的横截面视图。
图21示出根据一些实施例的在用于形成封装器件的工艺期间的中间步骤的横截面视图。
图22示出根据一些实施例的在用于形成封装器件的工艺期间的中间步骤的横截面视图。
图25和图26示出根据一些实施例的在用于形成封装器件的工艺期间的中间步骤的横截面视图。
图23、图24以及图27示出根据一些实施例的封装器件的俯视图。
图28示出根据一些实施例的封装器件的横截面视图。
具体实施方式
以下公开内容提供用于实施本发明的不同特征的许多不同实施例或实例。下文描述组件和布置的具体实例来简化本公开。当然，这些组件和布置只是实例且并不意欲为限制性的。举例来说，在以下描述中，第一特征在第二特征上方或第二特征上形成可包含第一特征与第二特征直接接触地形成的实施例，且还可包含额外特征可在第一特征与第二特征之间形成以使得第一特征与第二特征可不直接接触的实施例。另外，本公开可在各种实例中重复图式元件符号和/或字母。这种重复是出于简化和清楚的目的且本身并不指示所论述的各种实施例和/或配置之间的关系。
另外，为易于描述，本文中可使用如“在……之下(beneath)”、“在……下方(below)”、“下部(lower)”、“在……之上(above)”、“上部(upper)”以及类似术语的空间相对术语来描述如各图中所示出的一个元件或特征与另一(一些)元件或特征的关系。除图中所描绘的定向以外，空间相对术语意欲涵盖器件在使用或操作中的不同定向。装置可以其它方式定向(旋转90度或处于其它定向)，且本文中所使用的空间相对描述词同样可相应地进行解释。
虽然下文详细描述实施例，但本文中提供本公开的一般描述。在广义上，本文中描述的实施例提供一种封装，其中包含压缩部件的机械支架用于在热管理系统中实现增强的热界面材料(thermal interface material；TIM)压力。举例来说，在高功率系统中，热冷却要求可需要TIM上的高压(>30磅/平方英寸)，以降低热冷却的热阻。这些高功率系统可用于高效能计算(high performance computing；HPC)、边缘计算、云计算、数据中心、网络连接以及人工智能中。
本文描述的实施例中的一些或全部的有利特征可包含防止晶片孔钻孔和拧紧工艺对集成扇出型(integrated fan-out；InFO)晶片的损坏和成本，这可增加热循环后封装的可靠性。另外，所公开的封装可具有与服务器机箱集成的热管理系统。
图1到图16示出根据一些实施例的在用于形成封装的工艺期间的中间步骤的横截面视图。图17到图22以及图25到图26示出根据一些实施例的在用于形成封装器件的工艺期间的中间步骤的横截面视图。图23、图24以及图27示出根据一些实施例的封装器件的俯视图。
图1到图16示出根据一些实施例的在用于形成封装100A的工艺期间的中间步骤的横截面视图。在图1中，提供载体衬底102，且释放层104形成在载体衬底102上。载体衬底102可以是玻璃载体衬底、陶瓷载体衬底或类似物。载体衬底102可以是晶片，使得多个封装可同时形成在载体衬底102上。
释放层104可由聚合物类材料形成，所述材料可连同载体衬底102一起从后续步骤中将形成的上覆结构中去除。在一些实施例中，释放层104是环氧树脂类热释放材料，所述材料在加热时失去其粘合属性，如光到热转换(light-to-heat-conversion；LTHC)释放涂层。在其它实施例中，释放层104可以是紫外线(ultra-violet；UV)胶，所述紫外线胶在暴露于UV光时失去其粘合属性。释放层104可以液体形式分配且固化，可以是层压到载体衬底102上的叠层膜，或可以是类似物。释放层104的顶部表面可以是水平的且可具有高度的平面性。
在图2中，管芯110(有时称为集成电路管芯110)通过粘合剂106粘合到释放层104。虽然六个管芯110示出为粘合的，但应了解，更多或更少管芯110可粘合到释放层104。举例来说，两个或三个管芯110可粘合到释放层104。在一些实施例中，管芯110是集成电路管芯且可以是逻辑管芯(例如，中央处理单元、微控制器等)、存储器管芯(例如，动态随机存取存储器(dynamic random access memory；DRAM)管芯、静态随机存取存储器(static randomaccess memory；SRAM)管芯等)、功率管理管芯(例如，功率管理集成电路(powermanagement integrated circuit；PMIC)管芯)、射频(radio frequency；RF)管芯、传感器管芯、微机电系统(micro-electro-mechanical-system；MEMS)管芯、信号处理管芯(例如，数字信号处理(digital signal processing；DSP)管芯)、前端管芯(例如，类比前端(analog front-end；AFE)管芯)、类似物或其组合。在一些实施例中，管芯110可以是无源器件，如集成无源器件(integrated passive device；IPD)或离散无源器件。此外，在一些实施例中，管芯110可以是不同大小(例如，不同高度和/或表面面积)，且在其它实施例中，管芯110可以是相同大小(例如，相同高度和/或表面面积)。下文参考图3更详细地描述管芯110。
在一些实施例中，背侧重布线结构可在粘合管芯110之前形成在释放层104上，使得管芯110粘合到背侧重布线结构。在一实施例中，背侧重布线结构包含在一或多个介电层内具有一或多个金属化图案的那些介电层(有时称为重布线层或重布线线路)。在一些实施例中，在将管芯110粘合到介电层之前，不具有金属化图案的介电层形成在释放层104上。
图3示出根据一些实施例的管芯110中的一个。管芯110将在后续处理中封装以形成集成电路封装。管芯110可形成在晶片中，所述晶片可包含在后续步骤中单体化以形成多个有源器件管芯的不同器件区。管芯110可根据可适用的制造工艺进行处理，以形成集成电路。举例来说，管芯110包含半导体衬底112，如掺杂或未掺杂的硅，或绝缘体上半导体(semiconductor-on-insulator；SOI)衬底的有源层。半导体衬底112可包含：其它半导体材料，如锗；化合物半导体，包含碳化硅、砷化镓、磷化镓、磷化铟、砷化铟和/或锑化铟；合金半导体，包含SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP和/或GaInAsP；或其组合。还可使用其它衬底，如多层或梯度衬底。半导体衬底112具有有源表面(例如，图3中面朝上的表面)，有时称为前侧；以及非有源表面(例如，图3中面朝下的表面)，有时称为背侧。
器件114可形成在半导体衬底112的前侧处。器件114可以是有源器件(例如，晶体管、二极管或类似物)、电容器、电阻器或类似物。层间介电质(inter-layer dielectric；ILD)116形成在半导体衬底112的前侧上方。ILD 116包围且可覆盖器件114。ILD 116可包含由如磷硅酸盐玻璃(phosphosilicate glass；PSG)、硼硅酸盐玻璃(borosilicate glass；BSG)、硼掺杂磷硅酸盐玻璃(boron-doped phosphosilicate glass；BPSG)、未掺杂硅酸盐玻璃(undoped silicate glass；USG)或类似物的材料形成的一或多个介电层。
导电插塞118延伸穿过ILD 116从而以电气和物理方式耦合器件114。举例来说，当器件114是晶体管时，导电插塞118可耦合晶体管的栅极和源极/漏极区。导电插塞118可由钨、钴、镍、铜、银、金、铝、类似物或其组合形成。包含在ILD 116和导电插塞118上方的内连线结构119。内连线结构119内连器件114，以形成集成电路。内连线结构119可通过例如ILD116上的介电层中的金属化图案来形成。金属化图案包含形成在一或多个低k介电层中的金属线和通孔。内连线结构119的金属化图案通过导电插塞118电耦合到器件114。
管芯110更包含与其形成外部连接的衬垫120，如铝衬垫。衬垫120在管芯110的有源侧上，如在内连线结构119中和/或上。一或多个钝化膜122在管芯110上，如在内连线结构119和衬垫120的部分上。开口穿过钝化膜122延伸到衬垫120。如导电柱(例如，由如铜的金属形成)的管芯连接件124，延伸穿过钝化膜122中的开口，且以物理和电气方式耦合到衬垫120的相应者。管芯连接件124可通过例如镀覆或类似方法形成。管芯连接件124电耦合管芯110的相应集成电路。
任选地，焊料区(例如，焊料球或焊料凸块)可安置在衬垫120上。焊料球可用于对管芯110执行芯片探针(chip probe；CP)测试。可对管芯110执行CP测试以确定管芯110是否是已知良好管芯(known good die；KGD)。因此，仅封装经历后续处理的作为KGD的管芯110，且不封装未通过CP测试的管芯。在测试之后，可在后续处理步骤中去除焊料区。
介电层126可在管芯110的前侧上，如在钝化膜122和管芯连接件124上。介电层126横向密封管芯连接件124，且介电层126与管芯110横向相连。首先，介电层126可掩埋管芯连接件124，使得介电层126的最顶部表面在管芯连接件124的最顶部表面之上。在其中焊料区安置在管芯连接件124上的一些实施例中，介电层126也可掩埋焊料区。可替代地，可在形成介电层126之前去除焊料区。
介电层126可以是聚合物，如聚苯并恶唑(polybenzoxazole；PBO)、聚酰亚胺、苯环丁烷(benzocyclobutene；BCB)或类似物；氮化物，如氮化硅或类似物；氧化物，如氧化硅、磷硅酸盐玻璃(PSG)、硼硅酸盐玻璃(BSG)、硼掺杂磷硅酸盐玻璃(BPSG)或类似物；类似物；或其组合。介电层126可例如通过旋转涂布、叠层、化学气相沉积(chemical vapordeposition；CVD)或类似操作而形成。在一些实施例中，在管芯110的形成期间，管芯连接件124通过介电层126暴露。在一些实施例中，管芯连接件124保持掩埋，且在用于封装管芯110的后续工艺期间暴露。暴露管芯连接件124可去除管芯连接件124上可存在的任何焊料区。
在一些实施例中，管芯110是包含多个半导体衬底112的堆叠器件。举例来说，管芯110可以是包含多个存储器管芯的存储器器件，如混合存储器立方体(hybrid memorycube；HMC)模块、高带宽存储器(high bandwidth memory；HBM)模块或类似物。在这类实施例中，管芯110包含通过衬底穿孔(through-substrate via；TSV)内连的多个半导体衬底112。半导体衬底112中的每一个可具有内连线结构119。
粘合剂106在管芯110的背侧上，且将管芯110粘合到释放层104。粘合剂106可以是任何合适的粘合剂、环氧树脂、管芯贴合膜(die attach film；DAF)或类似物。粘合剂106可涂覆到集成电路管芯110的背侧，如相应半导体晶片的背侧，或可涂覆在载体衬底100的表面上方。管芯110可如通过锯切或切割而单体化，且通过粘合剂106使用例如拾放工具粘合到释放层104。
在图4中，密封体130形成在管芯110上和周围。在形成之后，密封体130密封管芯110。密封体130可以是模制化合物、环氧树脂或类似物。密封体130可通过压缩模制、转移模制或类似方法来涂覆，且可形成在载体衬底102上方，使得管芯110被掩埋或覆盖。密封体130进一步形成在管芯110之间的间隙区中。密封体130可以液体或半液体形式涂覆且随后固化。
另外，在图4中，对密封体130执行平坦化工艺以暴露管芯连接件124和介电层126。平坦化工艺还可去除介电层126和/或管芯连接件124的材料，直到暴露管芯连接件124。在平坦化工艺之后，管芯连接件124、介电层126以及密封体130的顶部表面可彼此齐平(例如，共面)。平坦化工艺可以是例如化学机械抛光(chemical-mechanical polish；CMP)工艺、研磨工艺、回蚀工艺或类似工艺。在一些实施例中，例如，如果管芯连接件124已经暴露，那么可省略平坦化工艺。
在图5到图14中，具有精细特征部分152和粗糙特征部分154的重布线结构156(参见图14)形成在密封体130和管芯110上方。重布线结构156包含金属化图案、介电层以及凸块下金属(under-bump metallurgy；UBM)。金属化图案也可称为重布线层或重布线线路。将重布线结构156绘示为具有四层金属化图案的实例。更多或更少介电层和金属化图案可形成在重布线结构156中。如果将形成较少介电层和金属化图案，那么可省略下文论述的步骤和工艺。如果将形成较多介电层和金属化图案，那么可重复下文论述的步骤和工艺。重布线结构156的精细特征部分152和粗糙特征部分154包含不同大小的金属化图案和介电层。
图5到图8示出形成重布线结构156的精细特征部分152的实例。在图5中，介电层132沉积在密封体130、介电层126以及管芯连接件124上。在一些实施例中，介电层132由可使用光刻掩模来图案化的感光性材料形成，所述感光性材料如PBO、聚酰亚胺、BCB或类似物。介电层132可通过旋转涂布、叠层、CVD、类似方法或其组合来形成。
在图6中，随后对介电层132进行图案化且形成金属化图案134。所述图案化形成暴露管芯连接件124的部分的开口。图案化可通过可接受的工艺来进行，如在介电层132是感光性材料时通过曝光介电层132，或通过使用例如各向异性刻蚀进行刻蚀。如果介电层132是感光性材料，那么可在曝光之后使介电层132显影。
随后，形成金属化图案134。金属化图案134具有在介电层132的主表面上且沿着所述主表面延伸的线部分(也称为导电线或迹线)，且具有延伸穿过介电层132从而以物理和电气方式耦合集成电路管芯405的管芯连接件124的通孔部分(也称为导通孔)。作为实例，金属化图案134可通过在介电层132上方和在延伸穿过介电层132的开口中形成晶种层来形成。在一些实施例中，晶种层是金属层，所述金属层可以是单层或包括由不同材料形成的多个子层的复合层。在一些实施例中，晶种层包括钛层和位于钛层上方的铜层。晶种层可使用例如物理气相沉积(physical vapor deposition；PVD)或类似操作而形成。随后在晶种层上形成光刻胶并图案化光刻胶。光刻胶可通过旋转涂布或类似操作而形成，且可曝光以进行图案化。光刻胶的图案对应于金属化图案134。图案化形成穿过光刻胶的开口以暴露晶种层。导电材料随后形成在光刻胶的开口中和晶种层的暴露部分上。导电材料可通过镀覆(如电镀或无电极镀覆)或类似方法形成。导电材料可包括金属，如铜、钛、钨、铝或类似物。晶种层的导电材料与下伏部分的组合形成金属化图案134。去除光刻胶和晶种层上未形成导电材料的部分。光刻胶可通过可接受的灰化或剥离工艺去除，如使用氧等离子或类似物。一旦将光刻胶去除，那么使用如湿式或干式刻蚀的可接受刻蚀工艺来去除晶种层的暴露部分。
在图7中，介电层136随后沉积在金属化图案134和介电层132上。介电层136可以类似于介电层132的方式形成，且可由与介电层132的材料类似的材料形成。
在图8中，随后对介电层132进行图案化且形成金属化图案138。图案化形成暴露金属化图案134的部分的开口。图案化可通过可接受的工艺来进行，如在介电层136是感光性材料时通过曝光介电层136，或通过使用例如各向异性刻蚀进行刻蚀。如果介电层136是感光性材料，那么可在曝光之后使介电层136显影。
随后，形成金属化图案138。金属化图案138具有在介电层136的主表面上和沿着所述主表面延伸的线部分，且具有延伸穿过介电层136从而以物理和电气方式耦合金属化图案134的通孔部分。金属化图案138可以类似于金属化图案134的方式形成，且可由与金属化图案134的材料类似的材料形成。虽然精细特征部分152示出为包含两个介电层和两个金属化图案，但任何数量的介电层和金属化图案可形成在精细特征部分152中。
重布线结构156的精细特征部分152包含介电层132和介电层136；以及金属化图案134和金属化图案138。在一些实施例中，介电层132和介电层136由相同介电材料形成，且形成为相同的厚度。类似地，在一些实施例中，金属化图案134和金属化图案138的导电特征由相同导电材料形成，且形成为相同的厚度。确切地说，介电层132和介电层136具有小的第一厚度T1，如在约5微米到约40微米的范围内，且金属化图案134和金属化图案138的导电特征具有小的第二厚度T2，如在约1微米到约25微米的范围内。
图9到图14示出形成重布线结构156的粗糙特征部分154的实例。在图9中，介电层140可沉积在金属化图案138和介电层136上。介电层140可以类似于介电层132的方式形成，且可由与介电层132的材料类似的材料形成。
在图10中，介电层140可进行图案化且随后形成金属化图案142。金属化图案142具有在介电层140的主表面上和沿着所述主表面延伸的线部分，且具有延伸穿过介电层140从而以物理和电气方式耦合金属化图案138的通孔部分。金属化图案142可以类似于金属化图案134的方式形成，且可由与金属化图案134的材料类似的材料形成。
在图11中，介电层144随后沉积在金属化图案142和介电层140上。介电层144可以类似于介电层132的方式形成，且可由与介电层132的材料类似的材料形成。
在图12中，对介电层144进行图案化且随后形成金属化图案146。介电层144可以类似于介电层132的方式进行图案化。金属化图案146具有在介电层144的主表面上和沿着所述主表面延伸的线部分，且具有延伸穿过介电层144从而以物理和电气方式耦合金属化图案142的通孔部分。金属化图案146可以类似于金属化图案134的方式形成，且可由与金属化图案134的材料类似的材料形成。
在图13中，介电层148随后沉积在金属化图案146和介电层144上。介电层148可以类似于介电层132的方式形成，且可由与介电层132的材料类似的材料形成。虽然粗糙特征部分154示出为包含三个介电层和两个金属化图案，但任何数量的介电层和金属化图案可形成在粗糙特征部分154中。在一些实施例中，精细特征部分152和粗糙特征部分154可各自包含3个介电层和3个金属化图案。
重布线结构156的粗糙特征部分154包含介电层140、介电层144以及介电层148；以及金属化图案142和金属化图案146。在一些实施例中，介电层140、介电层144以及介电层148由相同介电材料形成，且形成为相同的厚度。类似地，在一些实施例中，金属化图案142和金属化图案146的导电特征由相同导电材料形成，且形成为相同的厚度。确切地说，介电层140、介电层144以及介电层148具有大的第三厚度T3，如在约5微米到约40微米的范围内，且金属化图案142和金属化图案146的导电特征具有大的第四厚度T4，如在约1微米到约25微米的范围内。在各种实施例中，第三厚度T3可大于第一厚度T1(参见图8)，且第四厚度T4可大于第二厚度T2(参见图8)。
由于包含在粗糙特征部分154和精细特征部分152中的金属化图案的厚度，粗糙特征部分154与精细特征部分152相比可具有更低的电阻。由于电阻较低，粗糙特征部分154可用于布线电源线。精细特征部分152可用于布线不需要较低电阻的信号线。包含粗糙特征部分154和精细特征部分152两者允许电源线和信号线被布线，同时使重布线结构156的厚度最小化。
在图14中，衬垫150形成在介电层148上和介电层148到金属化图案146的开口中。衬垫150用以耦合到导电连接件174，且可称为凸块下金属(UBM)150。形成UBM 150以用于与重布线结构156的外部连接。UBM 150具有在介电层148的主表面上且沿着所述主表面延伸的凸块部分，且具有延伸穿过介电层148从而以物理和电气方式耦合金属化图案146的通孔部分。因此，UBM 150电耦合到集成电路管芯405。在一些实施例中，UBM 150具有与金属化图案134、金属化图案138、金属化图案142以及金属化图案146不同的大小。
作为实例，UBM 150可通过首先在介电层148上方和延伸穿过介电层148的开口中形成晶种层来形成。在一些实施例中，晶种层是金属层，所述金属层可以是单层或包括由不同材料形成的多个子层的复合层。在一些实施例中，晶种层包括钛层和位于钛层上方的铜层。晶种层可使用例如PVD或类似方法来形成。随后在晶种层上形成光刻胶并图案化光刻胶。光刻胶可通过旋转涂布或类似操作而形成，且可曝光以进行图案化。光刻胶的图案对应于UBM150。图案化形成穿过光刻胶的开口以暴露晶种层。导电材料随后形成在光刻胶的开口中和晶种层的暴露部分上。导电材料可通过镀覆(如电镀或无电极镀覆)或类似方法形成。导电材料可包括如铜、钛、钨、铝或类似物的金属。在一些实施例中，UBM 150可包括合金，如无电镀镍钯浸金(electroless nickel,electroless palladium,immersion gold；ENEPIG)、无电镀镍浸金(electroless nickel,immersion gold；ENIG)或类似物。晶种层的导电材料与下伏部分的组合形成UBM 150。去除光刻胶和晶种层上未形成导电材料的部分。光刻胶可通过可接受的灰化或剥离工艺去除，如使用氧等离子或类似物。一旦将光刻胶去除，那么使用如湿式或干式刻蚀的可接受刻蚀工艺来去除晶种层的暴露部分。
在图15中，翻转图13的结构，放置在载带160上，且载体衬底102从封装结构的背侧(例如，管芯110和密封体130的背侧)剥离。根据一些实施例，剥离包含在释放层104上投射光(如激光或UV光)，使得释放层104在光的热量下分解，且可去除载体衬底102。随后，将结构翻转且放置在载带160上(参见图16)。
在图16中，导电连接件162形成在UBM 150上，形成封装100A。导电连接件162可以是球栅阵列封装(ball grid array；BGA)连接件、焊料球、金属柱、受控塌陷芯片连接(C4)凸块、微凸块、无电镀镍钯浸金技术(ENEPIG)形成的凸块、无电镀镍浸金技术(ENIG)形成凸块或类似物。导电连接件162可包含导电材料，如焊料、铜、铝、金、镍、银、钯、锡、类似物或其组合。在一些实施例中，导电连接件162首先通过经由蒸镀、电镀、印刷、焊料转移、植球或类似方法形成焊料或焊膏层来形成。一旦已在结构上形成焊料层，便可执行回焊以便使材料成形为期望凸块形状。
图17到图19示出根据一些实施例的在用于形成封装器件的工艺期间的中间步骤的横截面视图。
在图17中，将包含模块170(170A和170B)的封装100B接合到封装100A，且将外部连接件180接合到封装100A。模块170可以是供电模块、存储器模块、电压调节器模块、集成无源器件(IPD)模块、类似物或其组合。模块170可称为电源模块170。在一些实施例中，模块170可包含倒装芯片接合、线接合或类似物。模块170可以是芯片级封装(chip-scalepackage；CSP)、多芯片模块(multi-chip module；MCM)或类似物。根据一些实施例，模块170可以是包含离散集成电路和无源器件的封装电路板(packaged circuit board；PCB)模块。在一些实施例中，模块170可以类似于上文所描述的管芯110的方式形成。
如图17中所示出，模块170可包含耦合到导电连接件174的衬垫172。衬垫172可以类似于衬垫150的方式形成，且可由与衬垫150的材料类似的材料形成。模块170可使用拾放机器或类似物来放置。一旦放置模块170，那么可回焊导电连接件174以将模块170接合到封装100A。
可形成底填充料176以填充模块170与封装100A之间的空隙。底填充料176可在附接模块170之后通过毛细流动工艺形成，或可在附接模块170之前通过合适的沉积方法形成。
在各种实施例中，封装100A可以是具有10,000平方毫米或大于10,000平方毫米的超大扇出型晶片级封装。封装100B的模块170A和模块170B可使用拾放机器或类似物放置在封装100A上方。一旦放置模块170A和模块170B，那么可回焊导电连接件174以将封装100B接合到封装100A。虽然图17示出封装100B中的两个模块170(170A和170B)，但封装100B可包含更多或更少的模块170。举例来说，封装100B可包含四个模块170。
另外，外部连接件180附接到封装100A。外部连接件180可以是封装100A到其它封装100A、其它外部系统或类似物的电气和物理界面。举例来说，当封装100A作为如数据中心的较大外部系统的部分安装时，外部连接件180可用于将封装100A耦合到外部系统。外部连接件180的实例包含大的线接合、带状电缆的接收器、柔性印刷电路或类似物。外部连接件180包含可类似于UBM 150的衬垫182。外部连接件180可包含如机箱、衬垫182以及外部连接引脚的不同组件，所述组件可包括不同材料。衬垫182和导电连接件174用于与封装100A的物理和电气连接。附接外部连接件180可包含使用拾放机器或类似物将外部连接件180放置在封装100A上，且随后回焊导电连接件174从而以物理和电气方式耦合衬垫182和UBM 150。
在图18中，热模块192附接到封装100B，且热模块196附接到封装100A。热模块192附接到模块170A和模块170B，且热模块196附接到管芯110的背侧。热模块192和热模块196可以是散热片、散热器、冷板、类似物或其组合。
在将热模块192附接到封装100B之前，热界面材料(TIM)190可分配在模块170的背侧上，从而将热模块192以物理和热方式耦合到封装100B。在将热模块196附接到封装100A之前，热界面材料(TIM)194可分配在封装100A的背侧上，从而将热模块196以物理和热方式耦合到封装100A。在一些实施例中，TIM 190和TIM 194由包括铟、热油脂、热薄片、相变材料、其组合或类似物的膜形成。
在图19中，安装机械支架200以将热模块192和热模块196分别固定到封装100B和封装100A。机械支架200物理啮合热模块192和热模块196的部分。使用机械支架200将热模块192和热模块196夹持到封装100B和封装100A可减少封装100B和封装100A中的任何翘曲。在一些实施例中，机械支架200的主体202具有从主体202的最底部表面到主体202的最顶部表面的高度H1。在一些实施例中，高度H1在10毫米(mm)到约100毫米的范围内，如约15毫米。
机械支架200包含主体202和紧固件204(有时称为压缩部件204)。在图19的实施例中，机械支架200包含直接与热模块192和热模块196两者啮合的紧固件204。机械支架的主体202是硬质支撑件，所述硬质支撑件可由具有高硬度的材料形成，如可包含钢、钛、钴或类似物的金属。紧固件204包含主体204A和衬垫204B。紧固件204的主体204A与机械支架200的主体202啮合，以允许紧固件204的衬垫204B将压力施加到相应热模块。在一些实施例中，紧固件204的主体204A是螺纹螺栓，以与机械支架200的主体202中的螺纹孔啮合。在一些实施例中，主体204A通过棘轮机构与主体202啮合。在其它实施例中，主体204A可以允许衬垫204B将压力施加到相应热模块的任何方式与主体202啮合。
在机械支架200首先与热模块192和热模块196啮合之后，拧紧紧固件204，从而增加由热模块192和热模块196施加到封装100A和封装100B的机械力。拧紧紧固件204，直到热模块192和热模块196对TIM 190和TIM 194施加期望量的压力。在一些实施例中，TIM 190和TIM 194上的期望量的压力大于30磅/平方英寸(psi)。在一些实施例中，TIM 190和TIM 194上的期望量的压力是从约30磅/平方英寸到约80磅/平方英寸，如约40磅/平方英寸。
图20示出根据一些实施例的另一封装器件的横截面视图。图20中的实施例类似于图1到图19中所示出的实施例，不同之处在于这一实施例不包含封装器件的底部上的紧固件204。本文中将不重述类似于用于先前描述的实施例的细节的关于这一实施例的细节。
在这一实施例中，机械支架200的主体202直接接触热模块196，而主体202与热模块196之间没有任何紧固件。在其它实施例中，机械支架200可具有与热模块196啮合的紧固件204，且可省略与热模块192啮合的紧固件204。在一些实施例中，器件可包含与封装器件的顶部、封装器件的底部、封装器件的侧壁或其组合啮合的紧固件204。
图21示出根据一些实施例的另一封装器件的横截面视图。图21中的实施例类似于图21中所示出的实施例，不同之处在于这一实施例包含与热模块196的侧壁啮合的紧固件204。在这一实施例中，机械支架200的紧固件204直接接触热模块196的侧壁。在一些实施例中，器件可包含与封装器件的顶部、封装器件的底部、封装器件的侧壁或其组合啮合的紧固件204。本文中将不重述类似于用于先前描述的实施例的细节的关于这一实施例的细节。
图22示出根据一些实施例的另一封装器件的横截面视图。图20中的实施例类似于图1到图19中所示出的实施例，不同之处在于，在这一实施例中，机械支架的主体集成到系统的壳体210中。本文中将不重述类似于用于先前描述的实施例的细节的关于这一实施例的细节。
在这一实施例中，壳体210充当机械支架200的主体。在一些实施例中，壳体210可以是服务器机箱、服务器机架、类似物或其组合。在一些实施例中，器件可包含与封装器件的顶部、封装器件的底部、封装器件的侧壁或其组合啮合的紧固件204。
图23示出根据一些实施例的封装器件的俯视图。俯视图可适用于上文所描述的图19到图22中的实施例中的任一个。在图23中，封装100A和封装100B以及热模块192和热模块196在俯视图中具有圆形形状。在其它实施例中，这些结构在俯视图中可具有任何形状，如正方形、矩形、三角形、其它多边形或类似物(参见例如图24)。
图23示出在封装器件的顶部(即，具有热模块192的侧面)上具有三个臂的机械支架200。机械支架200可在封装器件的底部(即，具有热模块196的侧面)上具有相同数量的臂。在一些实施例中，机械支架200可具有更多或更少臂。举例来说，机械支架200可在封装器件的顶部和底部中的每一个上具有2个到64个臂，如在顶部或底部中的每一个上具有3个臂或8个臂。
热模块192具有直径D1。封装100B具有直径D2。热模块196具有直径D3。机械支架的臂具有长度L1。紧固件204与热模块192/热模块196的接触面积是A1。在一些实施例中，直径D2大于或等于直径D1。在一些实施例中，直径D2小于或等于直径D3。在一些实施例中，长度L1在约1/16D3到约1/2D3的范围内。在一些实施例中，接触面积A1在相应热模块192/热模块196的面积的约1/128到约1/4的范围内。
图24示出根据一些实施例的封装器件的俯视图。俯视图可适用于上文所描述的图19到图22中的实施例中的任一个。图24中的实施例类似于图23中所示出的实施例，不同之处在于，在这一实施例中，封装100A和封装100B以及热模块192和热模块196在俯视图中具有正方形和/或矩形形状。本文中将不重述类似于用于先前描述的实施例的细节的关于这一实施例的细节。
图25到图27示出根据一些实施例的在用于形成封装器件的工艺期间的中间步骤的横截面图和俯视图。图23到图27中的实施例类似于图1到图24中所示出的实施例，不同之处在于，这一实施例包含延伸穿过封装100A和封装100B的螺栓230A。本文中将不重述类似于用于先前描述的实施例的细节的关于这一实施例的细节。
图25示出类似于上文图25中所描述的处理的中间阶段，且本文中不重述形成处理的这一中间阶段的描述。在图25中，在剥离载体衬底102之后，穿过封装100C形成孔222，以允许螺栓230A延伸穿过封装100C。
孔222可通过钻孔工艺220(如激光钻孔、机械钻孔或类似工艺)形成。孔222可通过以下形成：用钻孔工艺钻出孔222的轮廓，并随后去除由轮廓分离的材料。
图26示出类似于上文图19和图20中所描述的处理的中间阶段，且本文中不重述形成处理的这一中间阶段的描述。在图26中，螺栓230A延伸穿过封装100C和封装100B，且紧固件230B紧固到螺栓230A的末端。紧固件230B与螺栓230A啮合，且物理接触热模块192和热模块196以将压力施加到热模块192/热模块196以及TIM 190和TIM 194。在一些实施例中，紧固件230B旋拧到螺栓230A上。在一些实施例中，紧固件230B通过棘轮机构与螺栓230A啮合。在其它实施例中，紧固件230B可以允许紧固件230B将压力施加到相应热模块的任何方式与螺栓230A啮合。虽然示出一个螺栓230A，但在封装器件中可存在1到约5个螺栓。
图27示出根据一些实施例的图26中的封装器件的俯视图。图27中的实施例类似于图23中所示出的实施例，不同之处在于，在这一实施例中，封装器件包含螺栓230A和紧固件230B。本文中将不重述类似于用于先前描述的实施例的细节的关于这一实施例的细节。
距离D4是从封装100C的外边缘到螺栓230A的中心的距离。距离D5是邻近螺栓230A的中心之间的距离。在一些实施例中，距离D4在约1/4D2到约1/2D2的范围内。在一些实施例中，距离D5在约0.5毫米到约1/2D2的范围内。
图28示出根据一些实施例的封装器件的横截面视图。图28中的实施例类似于图1到图27中所示出的实施例，不同之处在于，在这一实施例中，热模块192具有比热模块196更大的直径。本文中将不重述类似于用于先前描述的实施例的细节的关于这一实施例的细节。这一实施例中的热模块192和热模块196的配置可应用于先前所公开实施例中的任一个。
在图28中，热模块192具有比热模块196更大的直径。如图28中所示出，热模块192附接到封装100B和外部连接件180。在一些实施例中，热模块192仅附接到封装100B。类似于先前实施例，热模块196附接到封装100A。
本文中所公开的实施例可达成优势。举例来说，本文中描述的实施例中的一些或全部可允许增强的TIM压力，同时还防止晶片孔钻孔和拧紧工艺对集成扇出型(InFO)晶片的损坏和成本。这一优势组合可提高热循环后封装的可靠性。另外，所公开的封装可具有与服务器机箱集成的热管理系统，这可降低整个系统的成本和大小。
一个实施例包含第一封装组件，所述第一封装组件包含第一集成电路管芯。器件还包含至少部分地包围第一集成电路管芯的第一密封体。器件还包含位于第一密封体上且耦合到第一集成电路管芯的重布线结构。器件还包含耦合到第一集成电路管芯的第一热模块。器件还包含接合到第一封装组件的第二封装组件，第二封装组件包含附接到第一封装组件的电源模块，电源模块包含有源器件。器件还包含耦合到电源模块的第二热模块。器件还包含从第二热模块的顶部表面延伸到第一热模块的底部表面的机械支架，机械支架物理接触第一热模块和第二热模块。
实施方案可包含以下特征中的一或多个。机械支架包含：主体；第一压缩部件，延伸穿过主体且物理接触第一热模块；以及第二压缩部件，延伸穿过主体且物理接触第二热模块。机械支架的主体邻近第一封装组件和第二封装组件的相对侧延伸。机械支架的主体集成到系统壳体中。器件更包含安置在第一热模块与第一集成电路管芯之间的第一热界面材料，和安置在第二热模块与电源模块之间的第二热界面材料。机械支架配置成将大于30磅/平方英寸的压力施加到第一热界面材料。电源模块包含供电模块、存储器模块、电压调节器模块、集成无源器件(IPD)模块或其组合。第一热模块包含散热片、散热器、冷板或其组合。器件更包含：第一螺栓，延伸穿过第一封装组件和第二封装组件；第一紧固件，旋拧到第一螺栓的第一端上，第一紧固件物理接触第一热模块；以及第二紧固件，旋拧到第一螺栓的第二端上，第二紧固件物理接触第二热模块。第二距离在1/4第一直径到1/2第一直径的范围内。
根据一些实施例，其中所述机械支架包括：主体；第一压缩部件，延伸穿过所述主体且物理接触所述第一热模块；以及第二压缩部件，延伸穿过所述主体且物理接触所述第二热模块。
根据一些实施例，其中所述机械支架的所述主体邻近所述第一封装组件和所述第二封装组件的相对侧延伸。
根据一些实施例，其中所述机械支架的所述主体集成到系统壳体中。
根据一些实施例，所述的封装器件，更包括：第一热界面材料，安置在所述第一热模块与所述第一集成电路管芯之间；以及第二热界面材料，安置在所述第二热模块与所述电源模块之间。
根据一些实施例，其中所述机械支架配置成将大于30磅/平方英寸的压力施加到所述第一热界面材料。
根据一些实施例，其中所述电源模块包括供电模块、存储器模块、电压调节器模块、集成无源器件(IPD)模块或其组合。
根据一些实施例，其中所述第一热模块包括散热片、散热器、冷板或其组合。
根据一些实施例，所述的封装器件，更包括：第一螺栓，延伸穿过所述第一封装组件和所述第二封装组件；第一紧固件，旋拧到所述第一螺栓的第一端上，所述第一紧固件物理接触所述第一热模块；以及第二紧固件，旋拧到所述第一螺栓的第二端上，所述第二紧固件物理接触所述第二热模块。
根据一些实施例，所述的封装器件，更包括：第二螺栓，延伸穿过所述第一封装组件和所述第二封装组件，所述第二螺栓的中心与所述第一螺栓的中心间隔开第一距离，所述第一螺栓的所述中心与所述第二封装组件的外边缘间隔开第二距离，所述第二封装组件具有第一直径，所述第一距离在所述0.5毫米到第一直径的1/2的范围内，其中所述第二距离在所述第一直径的1/4到所述第一直径的1/2的范围内。
一个实施例包含第一封装，所述第一封装包含多个集成电路管芯。器件还包含位于第一封装上方且接合到所述第一封装的第一电源模块和第二电源模块。器件还包含位于第一封装的多个集成电路管芯下方且耦合到第一封装的多个集成电路管芯的第一热界面材料(TIM)。器件还包含位于第一TIM下方且耦合到第一TIM的第一热模块。器件还包含位于第一电源模块和第二电源模块上方且耦合到第一电源模块和第二电源模块的第二TIM。器件还包含位于第二TIM上方且耦合到第二TIM的第二热模块。器件还包含机械支架，机械支架包含主体、第一紧固件以及第二紧固件，主体包含延伸到第一热模块下方的第一部分、沿着第一封装的一侧延伸的第二部分以及在第二热模块上方延伸的第三部分，第一部分、第二部分以及第三部分为连续的，第一紧固件延伸穿过机械支架的主体的第一部分且耦合到第一热模块，第二紧固件延伸穿过机械支架的主体的第三部分且耦合到第二热模块。
实施方案可包含以下特征中的一或多个。第一紧固件旋拧穿过机械支架的主体的第一部分。机械支架的第一紧固件、第二紧固件以及主体配置成将大于30磅/平方英寸的压力施加到第一TIM和第二TIM。第一封装在俯视图中具有圆形形状。第一热界面材料包含膜，所述膜包含铟、热油脂、热薄片、相变材料或其组合。第一封装更包含：第一密封体，至少部分地包围多个集成电路管芯；以及重布线结构，位于第一密封体上且耦合到多个集成电路管芯，第一电源模块和第二电源模块接合到重布线结构。
一个实施例包含一种封装器件，包括：第一封装，包括多个集成电路管芯；第一电源模块和第二电源模块，位于所述第一封装上方且接合到所述第一封装；第一热界面材料(TIM)，位于所述第一封装的所述多个集成电路管芯下方且耦合到所述第一封装的所述多个集成电路管芯；第一热模块，位于所述第一热界面材料下方且耦合到所述第一热界面材料；第二热界面材料，位于所述第一电源模块和所述第二电源模块上方且耦合到所述第一电源模块和所述第二电源模块；第二热模块，位于所述第二热界面材料上方且耦合到所述第二热界面材料；以及机械支架，包括主体、第一紧固件以及第二紧固件，所述主体包括延伸到所述第一热模块下方的第一部分、沿着所述第一封装的一侧延伸的第二部分以及在所述第二热模块上方延伸的第三部分，所述第一部分、所述第二部分以及所述第三部分为连续的，所述第一紧固件延伸穿过所述机械支架的所述主体的所述第一部分且耦合到所述第一热模块，所述第二紧固件延伸穿过所述机械支架的所述主体的所述第三部分且耦合到所述第二热模块。
根据一些实施例，其中所述第一紧固件旋拧穿过所述机械支架的所述主体的所述第一部分。
根据一些实施例，其中所述机械支架的所述第一紧固件、所述第二紧固件以及所述主体配置成将大于30磅/平方英寸的压力施加到所述第一热界面材料和所述第二热界面材料。
根据一些实施例，其中所述第一封装在俯视图中具有圆形形状。
根据一些实施例，其中所述第一热界面材料包括膜，所述膜包括铟、热油脂、热薄片、相变材料或其组合。
根据一些实施例，其中所述第一封装更包括：第一密封体，至少部分地包围所述多个集成电路管芯；以及重布线结构，位于所述第一密封体上且耦合到所述多个集成电路管芯，所述第一电源模块和所述第二电源模块接合到所述重布线结构。
一个实施例包含形成第一封装组件，其中形成第一封装组件包含用密封体密封第一集成电路管芯。方法还包含在密封体和第一集成电路管芯的有源侧上形成重布线结构。方法还包含将电源模块接合到第一封装组件的重布线结构，电源模块包含有源器件。方法还包含在第一集成电路管芯的背侧上和密封体的表面上形成第一热界面材料(TIM)。方法还包含附接耦合到第一TIM的第一热模块。方法还包含在电源模块的背侧上形成第二TIM。方法还包含将第二热模块附接到第二TIM。方法还包含将机械支架附接到第一热模块和第二热模块，机械支架包含压缩部件和主体，机械支架的主体从第二热模块的顶部表面延伸到第一热模块的底部表面，机械支架物理接触第一热模块和第二热模块。方法还包含调整机械支架的压缩部件以增加第一TIM和第二TIM上的压力。
实施方案可包含以下特征中的一或多个。调整机械支架的压缩部件以将大于30磅/平方英寸的压力施加到第一TIM和第二TIM。方法更包含：形成穿过第一封装组件的孔；穿过第一封装组件且邻近电源模块安置螺栓；将第一紧固件附接到螺栓的第一端上，第一紧固件物理接触第一热模块；以及将第二紧固件附接到螺栓的第二端上，第二紧固件物理接触第二热模块。机械支架的主体集成到系统壳体中。
一个实施例包含一种形成封装器件的方法，包括：形成第一封装组件，其中形成所述第一封装组件包括：用密封体密封第一集成电路管芯；以及在所述密封体和所述第一集成电路管芯的有源侧上形成重布线结构；将电源模块接合到所述第一封装组件的所述重布线结构，所述电源模块包括有源器件；在所述第一集成电路管芯的背侧上和所述密封体的表面上形成第一热界面材料(TIM)；附接耦合到所述第一热界面材料的第一热模块；在所述电源模块的背侧上形成第二热界面材料；将第二热模块附接到所述第二热界面材料；将机械支架附接到所述第一热模块和所述第二热模块，所述机械支架包括压缩部件和主体，所述机械支架的所述主体从所述第二热模块的顶部表面延伸到所述第一热模块的底部表面，所述机械支架物理接触所述第一热模块和所述第二热模块；以及调整所述机械支架的所述压缩部件以增加所述第一热界面材料和所述第二热界面材料上的压力。
根据一些实施例，其中调整所述机械支架的所述压缩部件以将大于30磅/平方英寸的压力施加到所述第一热界面材料和所述第二热界面材料。
根据一些实施例，所述的方法，更包括：形成穿过所述第一封装组件的孔；穿过所述第一封装组件且邻近所述电源模块安置螺栓；将第一紧固件附接到所述螺栓的第一端上，所述第一紧固件物理接触所述第一热模块；以及将第二紧固件附接到所述螺栓的第二端上，所述第二紧固件物理接触所述第二热模块。
根据一些实施例，其中所述机械支架的所述主体集成到系统壳体中。
还可包含其它特征和工艺。举例来说，可包含测试结构以辅助对3D封装或3DIC器件的校验测试。测试结构可包含例如形成在重布线层中或衬底上的测试衬垫，所述衬底允许对3D封装或3DIC的测试、对探针和/或探针卡的使用以及类似操作。可对中间结构以及最终结构进行校验测试。此外，本文中所公开的结构和方法可与并有已知良好管芯的中间校验的测试方法结合使用以增大良率且降低成本。
前文概述若干实施例的特征以使本领域的技术人员可更好地理解本公开的各方面。本领域的技术人员应了解，其可以易于使用本公开作为设计或修改用于实现本文中所介绍的实施例的相同目的和/或达成相同优势的其它工艺和结构的基础。本领域的技术人员还应认识到，这种等效构造并不脱离本公开的精神和范围，且本领域的技术人员可在不脱离本公开的精神和范围的情况下在本文中进行各种改变、替代以及更改。

Claims (1)

1.一种封装器件，其特征在于，包括：
第一封装组件，包括：
第一集成电路管芯；
第一密封体，至少部分地包围所述第一集成电路管芯；以及
重布线结构，位于所述第一密封体上且耦合到所述第一集成电路管芯；
第一热模块，耦合到所述第一集成电路管芯；
第二封装组件，接合到所述第一封装组件，所述第二封装组件包括：
电源模块，附接到所述第一封装组件，所述电源模块包括有源器件；
第二热模块，耦合到所述电源模块；以及
机械支架，从所述第二热模块的顶部表面延伸到所述第一热模块的底部表面，所述机械支架物理接触所述第一热模块和所述第二热模块。
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DE102020101293A1 (de) * 2020-01-21 2021-07-22 Infineon Technologies Ag Hochfrequenz-vorrichtung mit halbleitervorrichtung und wellenleiter-bauteil
US11444002B2 (en) * 2020-07-29 2022-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure

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